Preparation method of gold nanoparticle modified boron-doped diamond electrode and application

A technology of boron-doped diamond and gold nanoparticles, which is applied in the preparation and application fields of gold nanoparticles modified boron-doped diamond electrodes, can solve the problems of hindering the electrochemical performance of boron-doped diamond materials, poor bonding force, and the electrochemical performance of boron-doped diamond electrode materials. To solve problems such as low detection sensitivity, achieve high sensitivity, improve binding force, and improve surface roughness

Active Publication Date: 2020-01-03
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] One of the problems to be solved by the present invention is that the boron-doped diamond prepared by the existing method has poor bonding force when other substances are modified on its surface, and another problem to be solved is that the electrochemical detection sensitivity

Method used

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  • Preparation method of gold nanoparticle modified boron-doped diamond electrode and application
  • Preparation method of gold nanoparticle modified boron-doped diamond electrode and application
  • Preparation method of gold nanoparticle modified boron-doped diamond electrode and application

Examples

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Example Embodiment

[0026] Specific embodiment 1: This embodiment is a method for preparing gold nanoparticle modified boron-doped diamond electrode, which is carried out according to the following steps:

[0027] 1. Preparation of Boron Source:

[0028] Grind the boron oxide powder to a fine powder with a particle size of 5μm-100μm, then add the fine powder with a particle size of 5μm-100μm to the graphite powder, stir evenly, and then press into square tablets to obtain boron oxide with graphite as a carrier Boron source

[0029] The mass ratio of the boron oxide powder to the graphite powder is 1:(1~200);

[0030] 2. Preparation of boron-doped diamond film:

[0031] Place the substrate and the boron oxide source with graphite as the carrier side by side on the sample stage of the microwave plasma chemical vapor deposition device, and pass hydrogen and carbon source gas, and then the hydrogen flow rate is 20sccm~400sccm, the carbon source gas flow rate is 1sccm ~50sccm, substrate temperature 500℃~1200℃...

Example Embodiment

[0039] Specific embodiment two: this embodiment is different from specific embodiment one in that the square sheet described in step one has a side length of 30mm-50mm and a thickness of 1mm-2.5mm. Others are the same as the first embodiment.

Example Embodiment

[0040] Specific embodiment three: This embodiment is different from specific embodiment one or two in that the purity of the graphite powder and boron oxide powder described in step one are both 99.99%. Others are the same as the first or second embodiment.

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Abstract

The invention discloses a preparation method of a gold nanoparticle modified boron-doped diamond electrode and application, and relates to a preparation method of the gold nanoparticle modified boron-doped diamond electrode and the application. The invention aims to solve one of the problems that when a boron-doped diamond prepared by a method modifies other substances on the surface of the boron-doped diamond, the bonding force of the boron-doped diamond and the substances is poor, and solve the other problem that the electrochemical detection sensitivity of an boron-doped diamond electrode material is low, and the existing modification method can hinder the electrochemical performance of the boron-doped diamond material. The preparation method comprises the following steps that 1, a boron source is prepared; 2, a boron-doped diamond film is prepared; and 3, coating film and annealing are conducted. The preparation method and the application are used for preparing a gold nanoparticlemodified boron-doped diamond electrode and the application.

Description

technical field [0001] The invention relates to a preparation method and application of a gold-modified boron-doped diamond electrode. Background technique [0002] Boron-doped diamond materials have good wear resistance, chemical stability, biocompatibility and some excellent electrochemical properties, such as low background current, wide potential window and surface acid and alkali resistance. Therefore, boron-doped diamond materials have great application potential in the field of electrochemical analysis. [0003] The existing boron-doped diamond preparation methods are mainly high temperature and high pressure method and chemical vapor deposition method. Most boron-doped diamonds prepared by high temperature and high pressure methods are bulk materials with different sizes, and secondary processing, such as cutting and grinding, is required according to actual needs. Moreover, high-temperature and high-pressure boron-doped diamonds often contain impurities such as ca...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/517C23C14/35C23C14/18C23C14/58G01N21/65G01N27/30G01N27/327
CPCC23C14/185C23C14/35C23C14/5806C23C16/274C23C16/276C23C16/517G01N21/65G01N27/308G01N27/327
Inventor 朱嘉琦姚凯丽代兵谭小俊杨磊刘本建张森刘康韩杰才
Owner HARBIN INST OF TECH
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