The invention relates to a low-
voltage rapid micro-arc oxidation technique for micro-arc oxidation of valve metals such as aluminum,
magnesium,
titanium,
zirconium and
niobium by the aid of a constant-
current pulse oxidation power supply and
silicate system oxidation liquid. The
peak current and the
background current of the constant-
current pulse oxidation power supply are continuously adjustable within the range of 10A-500A, the frequency of the constant-
current pulse oxidation power supply is continuously adjustable within the range of 50Hz-100Hz, the duty ratio of the constant-current pulse oxidation power supply is continuously adjustable within the range of 10%-20%, and the
voltage of the constant-current pulse oxidation power supply varies from 0V to 200V. The
silicate system oxidation liquid comprises deionized water,
sodium silicate, a
regulator, a low-
voltage arcing agent and a reinforcing agent. Compared with a common micro-arc oxidation technique, the low-voltage rapid micro-arc oxidation technique has the advantages that oxidation voltage is reduced to be below 200V, time for preparing
ceramic films with the same thickness is shortened to be one third to one eighth of the original, micro-arc oxidation
energy consumption is basically unchanged, the thickness of a loose layer of each
ceramic film is obviously reduced, and the
hardness is averagely improved by about HV300 and reaches more than HV1000.