3411results about How to "Improve surface roughness" patented technology

A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO₂ gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxides formed from elements such as yttrium and gadolinium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

A method of manufacturing a semiconductor device includes: forming an amorphous metal film on a substrate by time-divisionally conducting a cycle a predetermined number of times, the cycle including: (a) simultaneously supplying a metal-containing gas and a first reducing gas to the substrate to form a first amorphous metal layer on the substrate, and (b) forming a second amorphous metal layer on the first amorphous metal layer by time-divisionally supplying, a predetermined number of times, the metal-containing gas and a second reducing gas to the substrate on which the first amorphous metal layer is formed; and forming a crystallized metal layer on the substrate by simultaneously supplying the metal-containing gas and the first reducing gas to the substrate on which the amorphous metal film is formed.

A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO₂ gate oxides are provided. Also shown is a gate oxide with a conduction band offset in a range of approximately 5.16 eV to 7.8 eV. Gate oxides formed from elements such as zirconium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

A barrier stack for encapsulating a moisture and/or oxygen sensitive electronic device is provided. The barrier stack comprises a multilayer film having at least one barrier layer having low moisture and/or oxygen permeability, and at least one sealing layer arranged to be in contact with a surface of the barrier layer, wherein the sealing material comprises reactive nanoparticles capable of interacting with moisture and/or oxygen, thereby retarding the permeation of moisture and/or oxygen through defects present in the barrier layer.

A headgear for use with a patient interface for delivering a flow of breathable gas to a patient includes at least a strap (741) adapted to position the patient interface in sealing engagement with the patient's airways. The strap is constructed from an elastomer and a first side of the strap includes a first region (215) on a portion of its surface that is textured to reduce friction with objects contacting the strap. A textured surface coating for a portion of an elastomer strap included in a headgear system is adapted to contact the skin of a patient, when in use, and the coating has a Ra value greater than zero. A vent (500) for use with a patient interface for delivering a flow of breathable gas to a patient includes a plurality of rises (580) and runs (570) in a stepped arrangement; and a plurality of holes (510) in the stepped arrangement for the venting of gas.

There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).

In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.

There is disclosed a method of recycling a delaminated wafer produced as a by-product in producing an SOI wafer according to a hydrogen ion delaminating method by reprocessing it for reuse as a silicon wafer, wherein at least polishing of the delaminated wafer for removing of a step in the peripheral part of the delaminated wafer and heat treatment in a reducing atmosphere containing hydrogen are conducted as the reprocessing. There are provided a method of appropriately reprocessing a delaminated wafer produced as a by-product in a hydrogen ion delaminating method to reuse it as a silicon wafer actually, and particularly, a method of reprocessing an expensive wafer such as an epitaxial wafer many times for reuse, to improve productivity of SOI wafer having a high quality SOI layer, and to reduce producing cost.

A traction drive type continuously variable transmission, comprising a first input/output shaft (6) rotatably supported on a casing (10), a second input/output shaft (7) rotatably supported on the casing (10), a V-pulley (4) supported on the first input/output shaft (6) and having a pair of pulley members forming a V-groove with variable grove width, a ring (3) engaged with the V-pulley (4) and supported at the outer periphery thereof, and a mechanism for moving the ring (3) to the periphery of the second input/output shaft (7).

A linear light source device for image reading. The main body of the linear light source device includes at least a light-guide bar and a light source assembly. The light-guide bar is a polygonal column with one surface having stripes thereon, acting as a reflective plane with a reflective function. The opposite plane to the reflective plane is a light-exiting plane, and all the remaining planes are reflective layers. At least one of the ends of the polygonal column is an incident plane for a light beam to enter. Light is transmitted through both of the two ends of the polygonal column (or one end with the other end acting as a reflective plane) and uniformly transmits through the light-exiting plane. The light-guided bar has a simple structure and configuration, a compact volume, a high rate of utilization in light energy, is flexibly changed in length, and is easy to manufacture with high product yield and low manufacturing cost. In addition, it can provide uniform monochromatic and colored light, with high luminance, and at a low cost.

A method for treating a surface of a medical implant to create nanostructures on the surface that results in increased in-vivo chondrocyte adhesion to the surface. Further, disclosed is a method to fabricate a drug delivery system. The drug delivery system includes a medical implant that has undergone a surface treatment process that results in the modification of the surface configuration and topography. The modified surface acts as a depot or reservoir for loaded biological material, biologic agents or pharmaceutical products. Additionally, a device for delivering pharmaceutical products or other biological materials is disclosed. The device includes integrally attached nanostructures that retain or adsorb the loaded pharmaceutical products and/or biological materials. Further disclosed is a medical implant that includes a surface configured to allow for and regulate protein adsorption. The surface of the medical implant has a layer of nanostructures rigidly attached with varying porosity and orientation that allow for surface protein adsorption to be controlled.

PCT No. PCT/EP97/01411 Sec. 371 Date Mar. 3, 1998 Sec. 102(e) Date Mar. 3, 1998 PCT Filed Mar. 20, 1997 PCT Pub. No. WO97/35732 PCT Pub. Date Oct. 2, 1997The invention relates to a data carrier, in particular bank note, paper of value, identity card or the like, having a security element disposed on the surface thereof. The data carrier is provided in at least one partial area with a background layer containing at least one authenticity feature. The optically variable element is applied to this background layer such that it overlaps the latter at least partly but does not completely cover it.

A plane wing titanium alloy thin-wall web efficient numerical control machining technology comprises the following steps that (1) blanking is carried out; (2) web outer contour machining is carried out, and an ear piece for locating is machined; (3) a web is clamped, and a cavity on the front face of the web is machined; (4) a web side wall is machined; (5) web quick converting is carried out, and a cavity on the back face of the web is machined; (6) the locating ear piece is removed by milling; and (7) quality testing is carried out. The rigidity of a machining technology system is improved, unstressed machining is achieved, by optimized design of a feed track, the stability of a machining process is improved, machining speed is increased, titanium alloy shallow cutting large feeding milling technology parameters are used, heat deforming during machining is lowered, rectifying processes are omitted, the metal removing rate is improved by 30%-50%, finally, machining efficiency is obviously improved, the clamping time of workpieces is obviously shortened through a quick-reloading technology, the repeated locating accuracy of clamping is guaranteed, and accordingly numerically-controlled machine tool machining efficiency is greatly improved.

A circuit substrate comprises a glass substrate 16, through-holes 18 formed through the glass substrate 16 and via electrodes 20 buried in the through-holes 18. An opening width of the through-holes 18 is minimum inside the glass substrate and is increased toward both surfaces of the glass substrate 16. Accordingly, the detachment of the via electrodes 20 can be prevented without increasing the surface roughness of the inside walls of the through holes, and stresses generated in the core substrate can be mitigated.

The present invention is useful for achieving a reduction in weight and for attaining increased strength in not only electronic devices and domestic electric devices but also various parts and structures. As a pretreatment, a rib (3) is dipped in an aqueous solution of ammonia, hydrazine, a hydrazine derivative, or a water-soluble amine compound. A metal frame (2) is inserted into an injection mold for forming ribs (3) by injection molding. A thermoplastic resin composition is injected to the surface of the metal frame (2) by injection molding to form ribs (3). In the housing of a casing cover (1) thus formed, the metal frame (2) and the ribs (3) made of the thermoplastic resin composition are integrally bonded together. Thus, the housing improves strength and external appearance. Moreover, a complicated configuration and structure can be formed in the housing.

There is provided a cylinder device having optimal arrangement of fine textures and optimal surface roughness capable of reducing wear of a cylinder bore side and a piston ring by processing fine textures in an optimal selection region of the cylinder bore side to improve lubrication characteristics between the piston ring and the cylinder bore side while reducing engine oil consumption by processing surface roughness of the cylinder bore side to an optimal status.

In a polishing method for a semiconductor wafer in which polishing slurry is interposed between the semiconductor wafer and a polishing pad and the semiconductor wafer is mirror-polished by a polishing step for planarization, when polishing is conducted using a suede-like foam urethane resin polishing pad having physical properties of low compressibility lower than 9 % and high pore density equal to or higher than about 150 pores/cm.sup.2 as the polishing pad used in the polishing step, a mirror silicon wafer with good surface roughness of 50 bits in haze can be manufactured.

The invention relates to a fluorine-free superhydrophobic finishing agent containing modified nano silicon dioxide hydrosol and application thereof. The finishing agent is prepared by the following steps of: (1) mixing a precursor, an anionic surfactant and water and stirring violently at the temperature of between 20 and 50 DEG C; and (2) slowly adding ammonia water serving as a catalyst dropwise, stirring, adding long-chain alkylsiloxane serving as a modifier and stirring continually so as to obtain modified SiO2 hydrosol. The finishing agent has a stable property, avoids the pollution of an organic solvent and has high water repellency when used for performing superhydrophobic finishing on textiles.

The invention relates to a metal piece, the roughness concentration of the surface of the metal piece is 0.02 micron to 0.1 micron, and the reflectivity of the surface is 65 percent to 90 percent. A method for processing the surface of the metal piece is used for obtaining the metal piece by polishing a metal substrate, and the polishing comprises the following steps: polishing pretreatment is carried out to the metal substrate; the metal substrate after the polishing pretreatment is dipped in polishing liquid containing ammonium salt and an addition agent, the metal substrate is put on a positive pole, and a pulse electric field with high frequency and high voltage is applied for plasma body polishing; and the metal piece is obtained after the polished metal substrate is washed and parched. Compared with the traditional polishing method, the method for processing the surface of the metal piece has the advantages that the electrochemistry leveling of the surface of the metal substrate is greatly increased, and the roughness concentration is reduced.

The invention provides a method for obtaining the high-quality surface of monocrystal silicon carbide through mechanical grinding and chemical polishing. By adopting the method, point defects, linear defects and planar defects of the monocrystal silicon carbide surface can be removed through double-side grinding, single-side swinging arm type rough grinding, single-side swinging arm type fine grinding and single-side swinging arm type CMP (chemically mechanical polishing), and surface blemishes and damaged layers of a wafer can be eliminated to the utmost extent, so that the high-quality surface of a monocrystal silicon carbide wafer can be obtained.