358 results about "Onium" patented technology

To provide an onium salt which is used for a chemically amplified resist composition having excellent solvent solubility, high sensitivity, high contrast, and excellent lithographic performances such as exposure latitude and linewidth roughness, in photolithography using high-energy radiation, a chemically amplified resist composition comprising the onium salt as a photoacid generator, and a pattern forming process using the chemically amplified resist composition.SOLUTION: An onium salt having the following formula (1) is provided. [R1-R12 independently represent H, halogen, or a C1-C20 hydrocarbyl group optionally including a heteroatom; one of R13 and R14 represents a substituent having a terminal sulfonic acid anion; the other represents H, halogen, or a C1-C20 hydrocarbyl group optionally including a heteroatom; and Z+ represents an onium cation.]SELECTED DRAWING: None

Provided are: a resist underlayer film-forming composition that is capable of forming a resist underlayer film that can impart excellent pattern rectangularity to a resist pattern; and a method for producing a semiconductor substrate. The method for producing a semiconductor substrate comprises: a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition; a step for forming a resist film on the resist underlayer film formed by the aforementioned step for coating a resist underlayer film-forming composition; a step for exposing the resist film to radiation; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer and a solvent. The polymer contains a repeating unit (1) having an organosulfonate anion moiety and an onium cation moiety, a repeating unit (2) represented by formula (2), and a repeating unit (3) represented by formula (3). (In formula (2), R4 is a group selected from the group consisting of groups represented by any of formulas (2-1) to (2-8).) (In formula (3), R6 is a group that contains a substructure represented by formula (3-1) or (3-2).) (In formulas (3-1) and (3-2), X1 and X2 are each independently an oxygen atom, a sulfur atom, or a nitrogen atom. A formula in which a solid line and a broken line are combined indicates a single bond or a double bond each independently.)

To provide an onium salt capable of generating acids of small diffusion, a chemically amplified positive resist composition containing the same, and a method for forming a resist pattern using the resist composition.SOLUTION: The present invention provides an onium salt represented by the following formula (1).SELECTED DRAWING: None

Provided are a radiation-sensitive composition and a pattern formation method that can exhibit, at the time of pattern formation, a sufficient level of sensitivity, LWR performance, pattern rectangularity, development defect suppression, CDU performance, and pattern circularity. This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); an onium salt that includes an organic acid anion including a cyclic structure, and an onium cation; and a solvent. (In formula (1), R1 is a hydrogen atom or a C1-20 monovalent organic group, L is a single bond or a divalent linking group, R2 is a C1-5 substituted or unsubstituted monovalent hydrocarbon group, R3 is a C1-10 monovalent organic group, a hydroxy group, a nitro group, a cyano group, an amino group, a halogen atom, or a sulfanyl group, in cases in which there are a plurality of R3s present, the plurality of R3s may be the same as or different from each other, and n is an integer from 0 to 10.)

To provide a chemically amplified negative resist composition which improves resolution in pattern formation and can give a resist pattern having good LER and pattern fidelity, and to provide a resist pattern forming method.SOLUTION: The chemically amplified negative resist composition contains: a photoacid generator comprising an onium salt represented by the following formula (A); and a base polymer which contains a polymer containing a repeating unit represented by a specific formula.SELECTED DRAWING: None

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and Z+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group; one of Rf21 and Rf22 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar is a monovalent organic group including an aromatic ring; R5, R6, R7, and R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group; and X is a single bond or a divalent hetero atom-containing group.

Provided are a radiation-sensitive composition and a pattern formation method wherein sensitivity, CDU performance, and development defect suppression can be demonstrated at a sufficient level when next-generation technology is applied. [Solution] This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); a high-fluorine-content polymer that has a higher mass content of fluorine atoms than the aforementioned polymer; one or more types of onium salts including an organic acid anion and an onium cation; and a solvent, wherein at least some of the organic acid anions in the onium salt or salts include an iodine-substituted aromatic ring structure. (In formula (1), Rα is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; Ar is an aromatic ring with 5-20 members and a valence of (p+q+r+1); R11 is a hydrogen atom or a C1-20 monovalent organic group; in cases in which a plurality of R11 moieties are present, the plurality of R11 moieties are the same as or different from each other; R12 is a cyano group, a nitro group, an alkyl group, a fluorinated alkyl group, or an acyl group; in cases in which a plurality of R12 moieties are present, the plurality of R12 moieties are the same as or different from each other; p and q are each independently an integer from 1 to 6; and r is an integer from 0 to 3.)

To provide a resist material that exhibits high sensitivity and improved LWR and CDU, regardless of whether it is of positive or negative type, and a pattern forming process using the same.SOLUTION: The present invention provides a resist material comprising an acid generator containing an onium salt represented by the following formula (1).SELECTED DRAWING: None

To provide an onium salt for use in a chemically amplified resist composition, featuring superior solvent solubility, high sensitivity, high contrast, and superior lithographic performance such as exposure tolerance and line width roughness in photolithography with high energy rays, chemically amplified resist composition including the onium salt as a photoacid generator, and a patterning method using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by the formula (1).SELECTED DRAWING: None

The present invention provides a radiation-sensitive composition and a pattern formation method with which it is possible to form a resist film in which development defects can be minizied and sensitivity and CDU can be exhibited at a sufficient level when a next-generation technology is applied. The present invention also provides a radiation-sensitive acid generation agent that can be applied to the radiation-sensitive composition. The radiation-sensitive composition contains a polymer (A) containing structural units (I) having an acid dissociable group, and a solvent (C), the radiation-sensitive composition meeting criteria (i) and / or (ii) below. (i) Contains a radiation-sensitive acid generator (B) containing a first organic acid anion and a first onium cation, the first onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the first organic acid anion being a sulfonic acid anion that contains an iodine atom. (ii) The polymer (A) is a radiation-sensitive acid-generating polymer (A1) containing structural units (IV) having a second organic acid anion and a second onium cation, the second onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the second organic acid anion being a sulfonic acid anion that contains an iodine atom.

The invention relates to an onium salt, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing: an onium salt used in a chemically amplified resist composition which has excellent solvent solubility, high sensitivity, high contrast, and excellent lithography performance such as exposure margin and line width roughness in optical lithography using high-energy rays; a chemically amplified resist composition comprising the onium salt as a photoacid generator; and a pattern forming method using the chemically amplified resist composition. [Solution] An onium salt represented by formula (1). In the # imgabs0 # formula, one of R13 and R14 is a group having a partial structure represented by formula (1a); in the formula # imgabs 1 #, Q1 to Q3 are each independently a hydrogen atom, a fluorine atom, or a fluorinated saturated hydrocarbon group having 1 to 6 carbon atoms, but when Q1 and Q2 are both hydrogen atoms, Q3 is a fluorine atom or a fluorinated saturated hydrocarbon group having 1 to 6 carbon atoms. In addition, the total number of fluorine atoms in Q1-Q3 is 2 or more.

The invention relates to the technical field of nuclear waste treatment, in particular to a cucurbituril-based supramolecular organic framework material as well as a preparation method and application thereof. A construction unit of the supramolecular organic framework material is constructed by taking cucurbit [8] uril (CB8) as a subject and terephthalyl viologen ligand 1, 1 ''-(1, 4-phenylene) bis ([4, 4 '-bipyridyl]-1-onium) salt (PBV. 2X) as an object through the bonding effect of the subject and the object; in the molecular structure of the supramolecular organic framework material, the construction units are staggered and stacked in parallel in the space, and NO3 <-> is located at the gap of the adjacent CB8. The supramolecular organic framework material disclosed by the invention has high structural stability and cationic framework characteristics, and a rigid framework and a pyridine conjugated system of CB8 endow the material with excellent chemical / irradiation stability, so that the material shows ultrahigh removal rate on ReO4 <-> / TcO4 <-> in extreme environments (strong acid, strong alkali and high irradiation).

The present invention relates to the field of material technology, and more specifically, to an onium salt compound, a photoacid generator, a photoresist composition, and a pattern forming method. The onium salt compound is a salt composed of anions and cations, wherein the cations are sulfonium cations or iodonium cations; the anion general formula is as shown in formula (B): In formula (B), R1 is an ester-containing group that can react with TMAH developer, R2 is a substituted or unsubstituted cycloalkane group with a carbon number of 6 to 10, and n is any integer between 1 and 3. ‑ The combination of fluorine atoms with high electron-withdrawing properties at relatively close positions can enhance the acidity, while introducing a cyclic hydrocarbon group with large spatial volume to reduce the diffusion of the acid; in addition, the addition of a group fragment with an ester group that can be cleaved by an alkaline developer can effectively reduce the development defects. The onium salt compound provided by the present invention is used as a photoacid generator to meet the current demand for high-resolution resist patterns, including low line width roughness (LWR) of the pattern and a smaller mask error enhancement factor (MEEF) of the line pattern, as well as fewer development defects.

Provided are: a radiation-sensitive composition capable of exhibiting excellent sensitivity, CDU performance, DOF performance, pattern circularity, LWR performance, pattern rectangularity, and development defect suppression when forming a pattern; a pattern formation method; and an onium salt. This radiation-sensitive composition contains an onium salt represented by formula (1) (hereinafter, also referred to as an "onium salt (1)"), a polymer containing a structural unit (I) having an acid-dissociable group, and a solvent. (In formula (1), Ar1 is an (a1 + b1 +1)-valent aromatic ring. Ar2 is an (a2 + b2 +1)-valent aromatic ring. X1 and X2 are each independently a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, or a halogen atom. When multiple X1 and multiple X2 are present, the multiple X1 and the multiple X2 are each identical to or different from each other. Y1 is a monovalent organic group having 4-20 carbon atoms and bonded via Ar1 and -O-, -S-, or-SO2-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y1 are present, the multiple Y1 are identical to or different from each other. Y2 is a monovalent organic group having 4-20 carbon atoms and bonded via Ar2 and -O-, -S-, or -SO2-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y2 are present, the multiple Y2 are identical to or different from each other. L is a single bond or a divalent linking group having 1-5 carbon atoms. a1, a2, b1, and b2 are each independently an integer of 0-5. When the aromatic ring of Ar2 is a benzene ring, b1 + b2 ≥ 1.)

To provide a chemically amplified negative resist composition having improved resolution in pattern formation and giving a resist pattern with good LER and pattern fidelity, and to provide a method for forming a resist pattern.SOLUTION: (A) a photoacid generator comprising an anion having the formula (A1) and a cation having a specific structure, and (B) a base polymer comprising a recurring unit having a specific structure with a phenolic hydroxyl group on a side chain.SELECTED DRAWING: None

To provide a chemically amplified positive resist composition comprising an onium salt that can generate an acid with reduced diffusion, and a resist pattern forming process using the resist composition.SOLUTION: A chemically amplified positive resist composition comprising (A) a photoacid generator composed of an onium salt represented by the formula (A), and (B) a base polymer comprising a polymer containing a repeating unit of a specific structure, which is decomposed under the action of acid to increase its solubility in an alkaline developer (where, one of R13 and R14 is a group having a partial structure represented by the formula (a)).SELECTED DRAWING: None

To provide an onium salt type monomer for a chemically amplified resist composition which has excellent solvent solubility and high sensitivity and contrast in photolithography using high-energy radiation, and is excellent in lithographic performance such as exposure tolerance (EL), LWR, CDU and depth of focus (DOF), and is also excellent in resistance to pattern collapse and etching resistance even in fine pattern formation; a polymer comprising a repeating unit derived from the onium salt type monomer; a chemically amplified resist composition comprising the polymer; and a pattern formation method using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt type monomer represented by the following formula (a).SELECTED DRAWING: None

To provide an onium salt used in a chemically amplified resist composition.SOLUTION: The onium salt comprises an anion represented by the following formula (1A) and a cation represented by the following formula (1B).SELECTED DRAWING: None

A chemically amplified positive resist composition is provided comprising (A) a quencher containing an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure in its anion and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern of rectangular profile with improved LER, fidelity and dose margin.

An onium salt consisting of an aromatic ring-bearing sulfonic acid anion and a cation, the anion having an acid labile group-protected hydroxy group and a fluorinated substituent group on the aromatic ring, is provided. A resist film of a chemically amplified resist composition comprising the onium salt has advantages including reduced LWR, high resolution, and collapse resistance when processed by the DUV, EUV or EB lithography.

The invention relates to a resist material and a pattern forming method. The present invention addresses the problem of providing: a resist material which can be either a positive type or a negative type, has high sensitivity, and has improved LWR and CDU; and a pattern forming method using the same. [Solution] A resist material containing an acid generator containing an onium salt represented by formula (1). # imgabs0 #

A radiation-sensitive resin composition includes a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a first structural unit represented by the following formula (1); a radiation-sensitive acid generating agent; and an acid diffusion control agent having a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group; one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z1+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group including a cyclic structure; Rf21 and Rf22 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z2+ represents a monovalent radiation-sensitive onium cation.

The purpose of the present invention is to provide: a radiation-sensitive composition capable of forming a resist film that can exhibit sensitivity and CDU at satisfactory levels when next-generation technology is applied and can suppress development defects; and a pattern formation method. The purpose of the present invention is also to provide a radiation-sensitive acid generator that can be applied to said radiation-sensitive composition. The present invention relates to a radiation-sensitive composition containing: a polymer (A) containing a structural unit (I) having an acid-dissociable group; a radiation-sensitive acid generator (B) represented by formula (1); and a solvent (C). (In formula (1): A is an (n1+n2+n3+1)-valent aromatic ring; R1 is a nitro group, a cyano group, a hydroxy group, an amino group, or a monovalent organic group; when there are multiple R1s, the multiple R1s are the same or different from one another; n1 is an integer of 1-5; n2 is an integer of 1-5; n3 is an integer of 0-5; m2 is an integer of 1-3; L is a single bond or an (m2+1)-valent linking group; Rf1 and Rf2 are each independently a fluorine atom or a monovalent fluorinated hydrocarbon group having 1-20 carbon atoms; Rf3 and Rf4 are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1-20 carbon atoms, or a monovalent fluorinated hydrocarbon group having 1-20 carbon atoms; when there are multiple Rf3s and multiple Rf4s, the multiple Rf3s and the multiple Rf4s may each be the same or different from one another; m1 is an integer of 0-10; and M+ is a monovalent onium cation.

Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting sensitivity, CDU performance, and LWR performance at a sufficient level when a resist pattern is formed using next-generation technology. In the present invention, a radiation-sensitive composition contains: a polymer including structural units having an acid-dissociable group; a radiation-sensitive acid generator containing a first organic acid anion and a first onium cation; an acid diffusion control agent that contains a second organic acid anion and a second onium cation, and generates an acid having a higher pKa than an acid generated from the radiation-sensitive acid generator under exposure to radiation; and a solvent. The first organic acid anion contains an acid anion moiety and an aromatic ring having at least both a first substituent and a second substituent. The first substituent and the second substituent are each independently a hydroxy group, a sulfo group, or a sulfanyl group. At least one selected from the group consisting of the polymer, the radiation-sensitive acid generator, and the acid diffusion control agent contains an iodo group.

An onium salt consisting of a sulfonic acid anion having an aromatic sulfonic acid structure substituted with an aromatic ring-containing hydrocarbyl group and a triarylsulfonium cation containing iodine and fluorine generates an acid with limited diffusion. A chemically amplified positive resist composition comprising the onium salt as an acid generator and a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer is processed by lithography to form a pattern of rectangular profile.

The objective of the present invention is to provide a novel resist material which is represented by general formula (I) and which contains: (A) a salt of a polyacid or a mixture thereof, wherein a cation moiety of said salt of a polyacid or said mixture thereof contains an onium cation or an onium dication having at least one polar group comprising an acid-dissociable group; and (B) an acid diffusion control agent. Also provided are a pattern formation method and a patterned structure. (I) (Am+)a(Bn+)b(C(am + bn)-)

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and one of Rf11 and Rf12 is a fluorine atom, and the other is a hydrogen atom, a fluorine atom, or a monovalent fluorinated hydrocarbon group. R4 is a monovalent organic group in which neither a fluorine atom nor a fluorinated hydrocarbon group is bonded to an atom adjacent to the sulfur atom.

An onium salt consisting of a sulfonic acid anion having an aromatic sulfonic acid structure substituted with an aromatic ring-containing hydrocarbyl group and a triarylsulfonium cation containing iodine and fluorine generates an acid having a moderate acidity and limited diffusion. A chemically amplified negative resist composition comprising the onium salt as an acid generator and a polymer is processed by lithography to form a pattern with reduced LER or a dot pattern of rectangular profile.

This resist composition contains a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) (in the formula, Ra01 represents a hydrogen atom, an alkyl group, or a halogenated alkyl group, L01 represents a single bond, *1-C(=O)-O-*2, or *1-C(=O)-NH-*2, Ar01 represents an aromatic group, L02 represents a single bond or a divalent linkage group, Ra02 represents a hydrogen atom or an alkyl group, I represents an iodine atom, m01 represents an integer of 1 or more, Mmd+ represents an m-valent onium cation, and m represents an integer of 1 or more).