285 results about "Onium" patented technology

Provided are a radiation-sensitive composition and a pattern formation method that can exhibit, at the time of pattern formation, a sufficient level of sensitivity, LWR performance, pattern rectangularity, development defect suppression, CDU performance, and pattern circularity. This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); an onium salt that includes an organic acid anion including a cyclic structure, and an onium cation; and a solvent. (In formula (1), R1 is a hydrogen atom or a C1-20 monovalent organic group, L is a single bond or a divalent linking group, R2 is a C1-5 substituted or unsubstituted monovalent hydrocarbon group, R3 is a C1-10 monovalent organic group, a hydroxy group, a nitro group, a cyano group, an amino group, a halogen atom, or a sulfanyl group, in cases in which there are a plurality of R3s present, the plurality of R3s may be the same as or different from each other, and n is an integer from 0 to 10.)

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and Z+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group; one of Rf21 and Rf22 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar is a monovalent organic group including an aromatic ring; R5, R6, R7, and R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group; and X is a single bond or a divalent hetero atom-containing group.

To provide an onium salt for use in a chemically amplified resist composition, featuring superior solvent solubility, high sensitivity, high contrast, and superior lithographic performance such as exposure tolerance and line width roughness in photolithography with high energy rays, chemically amplified resist composition including the onium salt as a photoacid generator, and a patterning method using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by the formula (1).SELECTED DRAWING: None

The invention relates to the technical field of nuclear waste treatment, in particular to a cucurbituril-based supramolecular organic framework material as well as a preparation method and application thereof. A construction unit of the supramolecular organic framework material is constructed by taking cucurbit [8] uril (CB8) as a subject and terephthalyl viologen ligand 1, 1 ''-(1, 4-phenylene) bis ([4, 4 '-bipyridyl]-1-onium) salt (PBV. 2X) as an object through the bonding effect of the subject and the object; in the molecular structure of the supramolecular organic framework material, the construction units are staggered and stacked in parallel in the space, and NO3 <-> is located at the gap of the adjacent CB8. The supramolecular organic framework material disclosed by the invention has high structural stability and cationic framework characteristics, and a rigid framework and a pyridine conjugated system of CB8 endow the material with excellent chemical / irradiation stability, so that the material shows ultrahigh removal rate on ReO4 <-> / TcO4 <-> in extreme environments (strong acid, strong alkali and high irradiation).

The present invention relates to the field of material technology, and more specifically, to an onium salt compound, a photoacid generator, a photoresist composition, and a pattern forming method. The onium salt compound is a salt composed of anions and cations, wherein the cations are sulfonium cations or iodonium cations; the anion general formula is as shown in formula (B): In formula (B), R1 is an ester-containing group that can react with TMAH developer, R2 is a substituted or unsubstituted cycloalkane group with a carbon number of 6 to 10, and n is any integer between 1 and 3. ‑ The combination of fluorine atoms with high electron-withdrawing properties at relatively close positions can enhance the acidity, while introducing a cyclic hydrocarbon group with large spatial volume to reduce the diffusion of the acid; in addition, the addition of a group fragment with an ester group that can be cleaved by an alkaline developer can effectively reduce the development defects. The onium salt compound provided by the present invention is used as a photoacid generator to meet the current demand for high-resolution resist patterns, including low line width roughness (LWR) of the pattern and a smaller mask error enhancement factor (MEEF) of the line pattern, as well as fewer development defects.

To provide a chemically amplified negative resist composition having improved resolution in pattern formation and giving a resist pattern with good LER and pattern fidelity, and to provide a method for forming a resist pattern.SOLUTION: (A) a photoacid generator comprising an anion having the formula (A1) and a cation having a specific structure, and (B) a base polymer comprising a recurring unit having a specific structure with a phenolic hydroxyl group on a side chain.SELECTED DRAWING: None

To provide a chemically amplified positive resist composition comprising an onium salt that can generate an acid with reduced diffusion, and a resist pattern forming process using the resist composition.SOLUTION: A chemically amplified positive resist composition comprising (A) a photoacid generator composed of an onium salt represented by the formula (A), and (B) a base polymer comprising a polymer containing a repeating unit of a specific structure, which is decomposed under the action of acid to increase its solubility in an alkaline developer (where, one of R13 and R14 is a group having a partial structure represented by the formula (a)).SELECTED DRAWING: None

To provide an onium salt type monomer for a chemically amplified resist composition which has excellent solvent solubility and high sensitivity and contrast in photolithography using high-energy radiation, and is excellent in lithographic performance such as exposure tolerance (EL), LWR, CDU and depth of focus (DOF), and is also excellent in resistance to pattern collapse and etching resistance even in fine pattern formation; a polymer comprising a repeating unit derived from the onium salt type monomer; a chemically amplified resist composition comprising the polymer; and a pattern formation method using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt type monomer represented by the following formula (a).SELECTED DRAWING: None

To provide an onium salt used in a chemically amplified resist composition.SOLUTION: The onium salt comprises an anion represented by the following formula (1A) and a cation represented by the following formula (1B).SELECTED DRAWING: None

An onium salt consisting of an aromatic ring-bearing sulfonic acid anion and a cation, the anion having an acid labile group-protected hydroxy group and a fluorinated substituent group on the aromatic ring, is provided. A resist film of a chemically amplified resist composition comprising the onium salt has advantages including reduced LWR, high resolution, and collapse resistance when processed by the DUV, EUV or EB lithography.

A radiation-sensitive resin composition includes a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a first structural unit represented by the following formula (1); a radiation-sensitive acid generating agent; and an acid diffusion control agent having a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group; one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z1+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group including a cyclic structure; Rf21 and Rf22 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z2+ represents a monovalent radiation-sensitive onium cation.

The purpose of the present invention is to provide: a radiation-sensitive composition capable of forming a resist film that can exhibit sensitivity and CDU at satisfactory levels when next-generation technology is applied and can suppress development defects; and a pattern formation method. The purpose of the present invention is also to provide a radiation-sensitive acid generator that can be applied to said radiation-sensitive composition. The present invention relates to a radiation-sensitive composition containing: a polymer (A) containing a structural unit (I) having an acid-dissociable group; a radiation-sensitive acid generator (B) represented by formula (1); and a solvent (C). (In formula (1): A is an (n1+n2+n3+1)-valent aromatic ring; R1 is a nitro group, a cyano group, a hydroxy group, an amino group, or a monovalent organic group; when there are multiple R1s, the multiple R1s are the same or different from one another; n1 is an integer of 1-5; n2 is an integer of 1-5; n3 is an integer of 0-5; m2 is an integer of 1-3; L is a single bond or an (m2+1)-valent linking group; Rf1 and Rf2 are each independently a fluorine atom or a monovalent fluorinated hydrocarbon group having 1-20 carbon atoms; Rf3 and Rf4 are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1-20 carbon atoms, or a monovalent fluorinated hydrocarbon group having 1-20 carbon atoms; when there are multiple Rf3s and multiple Rf4s, the multiple Rf3s and the multiple Rf4s may each be the same or different from one another; m1 is an integer of 0-10; and M+ is a monovalent onium cation.

An onium salt consisting of a sulfonic acid anion having an aromatic sulfonic acid structure substituted with an aromatic ring-containing hydrocarbyl group and a triarylsulfonium cation containing iodine and fluorine generates an acid with limited diffusion. A chemically amplified positive resist composition comprising the onium salt as an acid generator and a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer is processed by lithography to form a pattern of rectangular profile.

The objective of the present invention is to provide a novel resist material which is represented by general formula (I) and which contains: (A) a salt of a polyacid or a mixture thereof, wherein a cation moiety of said salt of a polyacid or said mixture thereof contains an onium cation or an onium dication having at least one polar group comprising an acid-dissociable group; and (B) an acid diffusion control agent. Also provided are a pattern formation method and a patterned structure. (I) (Am+)a(Bn+)b(C(am + bn)-)

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and one of Rf11 and Rf12 is a fluorine atom, and the other is a hydrogen atom, a fluorine atom, or a monovalent fluorinated hydrocarbon group. R4 is a monovalent organic group in which neither a fluorine atom nor a fluorinated hydrocarbon group is bonded to an atom adjacent to the sulfur atom.

An onium salt consisting of a sulfonic acid anion having an aromatic sulfonic acid structure substituted with an aromatic ring-containing hydrocarbyl group and a triarylsulfonium cation containing iodine and fluorine generates an acid having a moderate acidity and limited diffusion. A chemically amplified negative resist composition comprising the onium salt as an acid generator and a polymer is processed by lithography to form a pattern with reduced LER or a dot pattern of rectangular profile.

This resist composition contains a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) (in the formula, Ra01 represents a hydrogen atom, an alkyl group, or a halogenated alkyl group, L01 represents a single bond, *1-C(=O)-O-*2, or *1-C(=O)-NH-*2, Ar01 represents an aromatic group, L02 represents a single bond or a divalent linkage group, Ra02 represents a hydrogen atom or an alkyl group, I represents an iodine atom, m01 represents an integer of 1 or more, Mmd+ represents an m-valent onium cation, and m represents an integer of 1 or more).

To provide an onium salt for a resist composition having high sensitivity to particle beams or electromagnetic radiation, in particular, electron beams or extreme ultraviolet rays.SOLUTION: The onium salt is represented by general formula (1) or (2) in the figure. The onium salt has at least one fluorine atom or iodine atom bonded as a substituent in its structure.SELECTED DRAWING: None

To provide an onium salt for use in a chemically amplified resist composition that exhibits high solvent solubility, high sensitivity, and high contrast in photolithography using high-energy radiation, while also offering superior lithography properties such as exposure latitude (EL) and line width roughness (LWR); a chemically amplified resist composition comprising the onium salt as a photoacid generator; and a pattern forming process using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by formula (1).SELECTED DRAWING: None

To provide an onium salt used for a chemically amplified resist composition excellent in solvent solubility, having high sensitivity and high contrast, and excellent in lithography performance such as LWR, CDU, MEF, EL and DOF in photolithography using high energy rays, a chemically amplified resist composition containing the onium salt, and a pattern forming method using the chemically amplified resist composition.SOLUTION: An onium salt having the formula (1): SELECTED DRAWING: None

The invention relates to a chemically amplified negative resist composition and a resist pattern forming method. The present invention addresses the problem of providing: a chemically amplified negative resist composition which is capable of improving resolution during pattern formation and which is capable of obtaining a resist pattern having excellent LER and pattern loyalty; and a method for forming a resist pattern. A chemically amplified negative resist composition containing (A) a photoacid generator comprising an onium salt represented by the following formula (A), and (B) a base polymer comprising a polymer containing a repeating unit represented by the following formula (B1). In the # imgabs0 # formula, one of R13 and R14 is a group having a partial structure represented by formula (a). # imgabs1 #

The invention relates to an onium salt, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing: a photolithographic film which has excellent solvent solubility, high sensitivity, and excellent photolithographic properties in optical lithography using high-energy rays; the present invention relates to an onium salt for use in a chemically amplified resist composition which has excellent photolithographic properties such as LWR, CDU, MEF, EL, and DOF, while having a high contrast, a chemically amplified resist composition containing the onium salt, and a method for forming a pattern using the chemically amplified resist composition. The onium salt is represented by the following formula (1).

To provide an onium salt used for a chemically amplified resist composition excellent in solvent solubility, having high sensitivity and high contrast and excellent in lithography performance such as LWR, CDU, MEF, EL and DOF in photolithography using high energy rays, a chemically amplified resist composition containing the onium salt as a photoacid generator, and a pattern forming method using the chemically amplified resist composition.SOLUTION: An onium salt having the formula (1): SELECTED DRAWING: None

The present invention provides an onium salt capable of generating an acid with moderate acid strength and low diffusion, a chemically amplified positive-type resist composition containing the same, and a method for forming a resist pattern using the resist composition. [Solution] An onium salt represented by the following formula (A). TIFF2026090779000330.tif29102

This invention provides an antistatic agent that complies with PFAS regulations, exhibiting excellent resin compatibility and exhibiting sufficient antistatic performance with only a small amount of additive. [Solution] An antistatic agent comprising one or more onium salts selected from formulas (1) and (2). TIFF2026058576000010.tif23169 TIFF2026058576000011.tif25168 (In the formula, R1 to R4 are alkyl groups that may be the same or different, X represents an alkyl chain or a heteroatom-containing alkyl chain, and Y is a bisfluorosulfonyliimide or bisoxalatoborate anion.)

A resist composition in which a polymer compound having a constitutional unit derived from a compound represented by General Formula (a0-m) is used as a base resin. In the formula, W represents a polymerizable group-containing group; RAr1 and RAr2 represent an aromatic group; R01 and R02 represent an iodinated alkyl group, an iodine atom, or a hydrogen atom; L11 to L15 represent a linking group; q represents 0 or 1; when q represents 0, R02 represents an iodinated alkyl group or an iodine atom, and j2 represents an integer of 1 to 5; when q represents 1, the number of iodine atoms in R01 and R02 is 1 or more; and k1 and k2 represent 0 or 1; when q represents 0, k2 represents 1; when q represents 1, k1+k2 is 1; and Mm+ represents an m-valent onium cation.

The invention relates to an onium salt, a chemically amplified resist composition and a resist pattern forming method. The present invention provides an onium salt represented by formula (A).

This radiation-sensitive composition comprises: a polymer (A) which contains a structural unit having an acid-dissociable group; and a first onium salt represented by formula (1), and satisfies at least one among a first requirement and a second requirement, wherein at least one selected from the group consisting of a structural unit derived from a radiation-sensitive onium salt in the polymer (A) contained in said composition, the first onium salt, and a second onium salt contains an iodonium cation. X1 is a carboxy group or –COO-. c among a X1s in the formula are –COO-. R2 is a substituent different from a carboxy group and –COO-. First requirement: The polymer (A) further contains a structural unit derived from a radiation-sensitive onium salt. Second requirement: The second onium salt, which is a non-polymer and is a radiation-sensitive onium salt different from the first onium salt, is further contained.

Provided are: a radiation-sensitive composition that can exhibit sensitivity, LWR, and a process window at sufficient levels, during formation of a resist pattern; a pattern forming method; an onium salt compound; and a polymer. The radiation-sensitive composition comprises: a polymer containing a structural unit (I) derived from an onium salt compound represented by formula (1); and a solvent. (In the formula, W is a cyclic structure configured together with two carbon atoms. The bond between carbon atoms, represented by the formula below, represents a single bond or a double bond.　A is a group represented by any of formula (A-1) to formula (A-7). (In the formulae, RA1 and RA2 are each a monovalent organic group having 1-20 carbon atoms). R1 is a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, a carboxy group, a hydroxy group, an amino group, a halogen atom, or a thiol group. Z+ is a monovalent radiation-sensitive onium cation. However, RA1, RA2, R1 or Z+ contains a polymerizable group).