242 results about "Onium" patented technology

To provide an onium salt for use in a chemically amplified resist composition, featuring superior solvent solubility, high sensitivity, high contrast, and superior lithographic performance such as exposure tolerance and line width roughness in photolithography with high energy rays, chemically amplified resist composition including the onium salt as a photoacid generator, and a patterning method using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by the formula (1).SELECTED DRAWING: None

The invention relates to the technical field of nuclear waste treatment, in particular to a cucurbituril-based supramolecular organic framework material as well as a preparation method and application thereof. A construction unit of the supramolecular organic framework material is constructed by taking cucurbit [8] uril (CB8) as a subject and terephthalyl viologen ligand 1, 1 ''-(1, 4-phenylene) bis ([4, 4 '-bipyridyl]-1-onium) salt (PBV. 2X) as an object through the bonding effect of the subject and the object; in the molecular structure of the supramolecular organic framework material, the construction units are staggered and stacked in parallel in the space, and NO3 <-> is located at the gap of the adjacent CB8. The supramolecular organic framework material disclosed by the invention has high structural stability and cationic framework characteristics, and a rigid framework and a pyridine conjugated system of CB8 endow the material with excellent chemical / irradiation stability, so that the material shows ultrahigh removal rate on ReO4 <-> / TcO4 <-> in extreme environments (strong acid, strong alkali and high irradiation).

To provide a chemically amplified negative resist composition having improved resolution in pattern formation and giving a resist pattern with good LER and pattern fidelity, and to provide a method for forming a resist pattern.SOLUTION: (A) a photoacid generator comprising an anion having the formula (A1) and a cation having a specific structure, and (B) a base polymer comprising a recurring unit having a specific structure with a phenolic hydroxyl group on a side chain.SELECTED DRAWING: None

To provide a chemically amplified positive resist composition comprising an onium salt that can generate an acid with reduced diffusion, and a resist pattern forming process using the resist composition.SOLUTION: A chemically amplified positive resist composition comprising (A) a photoacid generator composed of an onium salt represented by the formula (A), and (B) a base polymer comprising a polymer containing a repeating unit of a specific structure, which is decomposed under the action of acid to increase its solubility in an alkaline developer (where, one of R13 and R14 is a group having a partial structure represented by the formula (a)).SELECTED DRAWING: None

To provide an onium salt used in a chemically amplified resist composition.SOLUTION: The onium salt comprises an anion represented by the following formula (1A) and a cation represented by the following formula (1B).SELECTED DRAWING: None

An onium salt consisting of a sulfonic acid anion having an aromatic sulfonic acid structure substituted with an aromatic ring-containing hydrocarbyl group and a triarylsulfonium cation containing iodine and fluorine generates an acid with limited diffusion. A chemically amplified positive resist composition comprising the onium salt as an acid generator and a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer is processed by lithography to form a pattern of rectangular profile.

An onium salt consisting of a sulfonic acid anion having an aromatic sulfonic acid structure substituted with an aromatic ring-containing hydrocarbyl group and a triarylsulfonium cation containing iodine and fluorine generates an acid having a moderate acidity and limited diffusion. A chemically amplified negative resist composition comprising the onium salt as an acid generator and a polymer is processed by lithography to form a pattern with reduced LER or a dot pattern of rectangular profile.

To provide an onium salt for a resist composition having high sensitivity to particle beams or electromagnetic radiation, in particular, electron beams or extreme ultraviolet rays.SOLUTION: The onium salt is represented by general formula (1) or (2) in the figure. The onium salt has at least one fluorine atom or iodine atom bonded as a substituent in its structure.SELECTED DRAWING: None

To provide an onium salt for use in a chemically amplified resist composition that exhibits high solvent solubility, high sensitivity, and high contrast in photolithography using high-energy radiation, while also offering superior lithography properties such as exposure latitude (EL) and line width roughness (LWR); a chemically amplified resist composition comprising the onium salt as a photoacid generator; and a pattern forming process using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by formula (1).SELECTED DRAWING: None

To provide an onium salt used for a chemically amplified resist composition excellent in solvent solubility, having high sensitivity and high contrast, and excellent in lithography performance such as LWR, CDU, MEF, EL and DOF in photolithography using high energy rays, a chemically amplified resist composition containing the onium salt, and a pattern forming method using the chemically amplified resist composition.SOLUTION: An onium salt having the formula (1): SELECTED DRAWING: None

The invention relates to a chemically amplified negative resist composition and a resist pattern forming method. The present invention addresses the problem of providing: a chemically amplified negative resist composition which is capable of improving resolution during pattern formation and which is capable of obtaining a resist pattern having excellent LER and pattern loyalty; and a method for forming a resist pattern. A chemically amplified negative resist composition containing (A) a photoacid generator comprising an onium salt represented by the following formula (A), and (B) a base polymer comprising a polymer containing a repeating unit represented by the following formula (B1). In the # imgabs0 # formula, one of R13 and R14 is a group having a partial structure represented by formula (a). # imgabs1 #

The invention relates to an onium salt, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing: a photolithographic film which has excellent solvent solubility, high sensitivity, and excellent photolithographic properties in optical lithography using high-energy rays; the present invention relates to an onium salt for use in a chemically amplified resist composition which has excellent photolithographic properties such as LWR, CDU, MEF, EL, and DOF, while having a high contrast, a chemically amplified resist composition containing the onium salt, and a method for forming a pattern using the chemically amplified resist composition. The onium salt is represented by the following formula (1).

To provide an onium salt used for a chemically amplified resist composition excellent in solvent solubility, having high sensitivity and high contrast and excellent in lithography performance such as LWR, CDU, MEF, EL and DOF in photolithography using high energy rays, a chemically amplified resist composition containing the onium salt as a photoacid generator, and a pattern forming method using the chemically amplified resist composition.SOLUTION: An onium salt having the formula (1): SELECTED DRAWING: None

The present invention provides an onium salt capable of generating an acid with moderate acid strength and low diffusion, a chemically amplified positive-type resist composition containing the same, and a method for forming a resist pattern using the resist composition. [Solution] An onium salt represented by the following formula (A). TIFF2026090779000330.tif29102

This invention provides an antistatic agent that complies with PFAS regulations, exhibiting excellent resin compatibility and exhibiting sufficient antistatic performance with only a small amount of additive. [Solution] An antistatic agent comprising one or more onium salts selected from formulas (1) and (2). TIFF2026058576000010.tif23169 TIFF2026058576000011.tif25168 (In the formula, R1 to R4 are alkyl groups that may be the same or different, X represents an alkyl chain or a heteroatom-containing alkyl chain, and Y is a bisfluorosulfonyliimide or bisoxalatoborate anion.)

A resist composition in which a polymer compound having a constitutional unit derived from a compound represented by General Formula (a0-m) is used as a base resin. In the formula, W represents a polymerizable group-containing group; RAr1 and RAr2 represent an aromatic group; R01 and R02 represent an iodinated alkyl group, an iodine atom, or a hydrogen atom; L11 to L15 represent a linking group; q represents 0 or 1; when q represents 0, R02 represents an iodinated alkyl group or an iodine atom, and j2 represents an integer of 1 to 5; when q represents 1, the number of iodine atoms in R01 and R02 is 1 or more; and k1 and k2 represent 0 or 1; when q represents 0, k2 represents 1; when q represents 1, k1+k2 is 1; and Mm+ represents an m-valent onium cation.

The invention relates to an onium salt, a chemically amplified resist composition and a resist pattern forming method. The present invention provides an onium salt represented by formula (A).

This radiation-sensitive composition comprises: a polymer (A) which contains a structural unit having an acid-dissociable group; and a first onium salt represented by formula (1), and satisfies at least one among a first requirement and a second requirement, wherein at least one selected from the group consisting of a structural unit derived from a radiation-sensitive onium salt in the polymer (A) contained in said composition, the first onium salt, and a second onium salt contains an iodonium cation. X1 is a carboxy group or –COO-. c among a X1s in the formula are –COO-. R2 is a substituent different from a carboxy group and –COO-. First requirement: The polymer (A) further contains a structural unit derived from a radiation-sensitive onium salt. Second requirement: The second onium salt, which is a non-polymer and is a radiation-sensitive onium salt different from the first onium salt, is further contained.

Provided are: a radiation-sensitive composition that can exhibit sensitivity, LWR, and a process window at sufficient levels, during formation of a resist pattern; a pattern forming method; an onium salt compound; and a polymer. The radiation-sensitive composition comprises: a polymer containing a structural unit (I) derived from an onium salt compound represented by formula (1); and a solvent. (In the formula, W is a cyclic structure configured together with two carbon atoms. The bond between carbon atoms, represented by the formula below, represents a single bond or a double bond.　A is a group represented by any of formula (A-1) to formula (A-7). (In the formulae, RA1 and RA2 are each a monovalent organic group having 1-20 carbon atoms). R1 is a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, a carboxy group, a hydroxy group, an amino group, a halogen atom, or a thiol group. Z+ is a monovalent radiation-sensitive onium cation. However, RA1, RA2, R1 or Z+ contains a polymerizable group).

The present application functions as a photoacid generator, and further provides a chemical amplification type photoresist composition by combining the photoacid generator with a resin whose solubility in a base is increased by the action of an acid generated by irradiation of active energy rays such as light or electron rays. The present application relates to an onium salt which is an onium salt represented by General Formula (1), wherein, of the two isomers of a facial isomer and a mer isomer in the anion structure, the proportion of the facial isomer is 15.0% by weight or less. 2 ) n+1 -E] + [(R 1 )3(F)3P] ‑ (1).

The purpose of the present invention is to provide: a radiation-sensitive composition which is capable of forming a resist film that can exhibit sensitivity, LWR, DOF, EL, PED, CDU, and pattern circularity at a sufficient level; and a pattern forming method. Another purpose of the present invention is to provide a radiation-sensitive acid generator that can be applied to the radiation-sensitive composition. The radiation-sensitive composition contains a solvent (E) and a polymer (A) containing a structural unit (I) having an acid-dissociable group, and at least the radiation-sensitive composition contains a radiation-sensitive acid generator (B) containing a partial structure represented by formula (a), or the polymer (A) contains a structural unit (VII) containing a partial structure represented by formula (a). (In formula (a), R1 represents a hydrogen atom, a nitro group, a hydroxyl group, a cyano group, a carboxyl group, a thiol group, or a monovalent fluorine-free organic group; under the condition that a plurality of R1 exist, the plurality of R1 are the same or different; r2 and R3 are each independently a hydrogen atom, a nitro group, a hydroxyl group, a cyano group, a carboxyl group, a thiol group, a halogen atom, or a monovalent organic group, or a C3-20 divalent alicyclic group in which R2 and R3 are bonded to each other and together with a carbon atom to which R2 and R3 are bonded; when a plurality of R2 and R3 are present, the plurality of R2 and R3 are the same or different; l is-C (= O) O-,-C (= O) NR5-or-OC (= O) O-; R5 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms; a bond on the R41 side; r41 is a divalent organic group having a cyclic structure and having a heteroatom; m is an integer of 1-5; n is an integer of 0-4; the bond is a bond with the other part in the corresponding polymer (A) or radiation-sensitive acid generator (B); and M + represents a monovalent onium cation).

The invention provides a radiation-sensitive composition and a pattern forming method. The radiation-sensitive composition can fully exert sensitivity or pattern rectangularity, pattern circularity, exposure latitude, focal depth, development defect inhibition, LWR and CDU when forming a resist pattern, and has good storage stability. A radiation-sensitive composition comprising: an onium salt compound represented by formula (1); a polymer; and a solvent. (In formula (1), Rf represents a halogen atom or a cyano group. And n represents an integer of 0-4. When n is 2 or more, the plurality of Rf are the same as or different from each other. R1 represents a monovalent organic group having 1-20 carbon atoms, a hydrogen atom, a halogen atom, a cyano group, or an alkyl fluoride group, said monovalent organic group being bonded to the carbon atom to which R1 is bonded via-COO-,-OCO-,-SO2-,-S-,-CO-,-O-CO-O-,-CONR '-, or-NR' CO-. R'each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1-10 carbon atoms; and R1 represents a carbon atom to which R1 is bonded. In the formula, when n is 0, R1 is a halogen atom or a cyano group. And R2 is a hydroxyl group, a nitro group, an amino group, a carboxyl group or a monovalent organic group with 1-20 carbon atoms. And m represents an integer of 0-4. When m is 2 or more, the plurality of R2 may be the same as or different from each other. And n + m represents an integer of 0-4. Ar is a monovalent organic group having an aromatic ring having a ring member number of 5-40. And X is methylene,-O-,-CO-or-SO2-. Wherein, when X is a methylene group, the aromatic ring of Ar is directly bonded to S + in the formula, and R1 does not include a polymerizable group. And each of R41, R42, R43, R44, R45 and R48 independently represents a hydrogen atom, a hydroxyl group, a halogen atom or a monovalent organic group having 1-20 carbon atoms. And R46 and R47 each independently represent a hydrogen atom, a hydroxyl group, a halogen atom, or a monovalent organic group having 1-20 carbon atoms, or each represents a ring structure having 3-10 ring members in which R46 and R47 are bonded to each other and are configured together with the two carbon atoms to which these are bonded.) (In the formula, R46 and R47 each independently represent a hydrogen atom, a hydroxyl group, a halogen atom, or a monovalent organic group having 1-20 carbon atoms.

The invention relates to an onium salt, a photoacid generator, a chemically amplified resist composition and a pattern forming method. The present invention is an onium salt represented by general formula (A). Thereby, provided is an onium salt used in a chemically amplified resist composition having excellent lithography performance such as high sensitivity, CDU, MEEF, and LWR in optical lithography using high-energy rays. In the formula, m1 is an integer of 1-4. And m2 is 1 or 2. R1 represents an electron-withdrawing group such as a hydrogen atom, a hydrocarbon group, or a cyano group; lA and LB each represents a single bond, a carbonyl group, an ether bond, an ester bond, an amide bond, a sulfonate bond, a sulfonamide bond, a carbonate bond, a urethane bond, or a hydrocarbylene group. W1 is a hydrocarbylene group containing an alicyclic structure, and a carbon atom forming the alicyclic structure has two atomic bonds. And W2 is a hydrocarbon group containing an alicyclic structure. Z + is an onium cation.

The invention discloses a preparation method and application of a polysulfide compound Poly (S-[VIM-Br]) / ATP (adenosine triphosphate). The preparation method comprises the following steps: by taking industrial by-products sulfur (S8) and 1-vinyl-3-brominated imidazole onium salt (VIM-Br) as raw materials, synthesizing a multi-sulfur polymer through an anti-sulfuration reaction, and then carrying out ball-milling compounding on the multi-sulfur polymer and acidified attapulgite (ATP). The compound shows high-selectivity adsorption on precious metal Au (III) / Ag (I), the adsorption rates on Ag (I) and Au (III) in complex systems such as gold ore waste residues and waste water are as high as 99% and 93% or above, and the adsorption rate on Au (III) is kept at 76.02% after three times of circulation. The cost is reduced by using cheap raw materials and a room-temperature process; aTP modification significantly improves selectivity and stability in a complex environment; the adsorption process is accompanied by precious metal reduction (Au (III)-Au (0)), and resource recovery is facilitated.

Provided are: an actinic ray-sensitive or radiation-sensitive resin composition containing a resin in which the polarity increases by the action of an acid, and an onium salt having a specific structure; a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern formation method using the actinic ray-sensitive or radiation-sensitive resin composition; and an electronic device manufacturing method.

To provide a chemically amplified positive resist composition containing an onium salt capable of generating an acid with small diffusion, and to provide a resist pattern forming method using the resist composition.SOLUTION: A chemically amplified positive resist composition comprising (A) a photoacid generator comprising an anion having the formula (A1) and a cation having a specific structure, and (B) a base polymer comprising a polymer comprising a recurring unit having a phenolic hydroxyl group on a side chain and adapted to be decomposed under the action of acid to increase its solubility in alkaline developer.SELECTED DRAWING: None

The invention provides a radiation-sensitive composition, a pattern forming method and an onium salt which can form a resist film or pattern with excellent sensitivity or LWR performance, DOF performance, pattern rectangularity, CDU performance, pattern roundness, EL performance and pattern collapse resistance. A radiation-sensitive composition containing an onium salt represented by formula (1), a polymer containing a structural unit (I) having an acid-dissociable group, and a solvent (in formula (1), Q1 and Q2 are each independently a carbon atom or a nitrogen atom; wherein at least one of Q1 and Q2 is a carbon atom; w represents a monocyclic or polycyclic non-aromatic ring structure having 3-40 ring members, which is configured together with Q1 and Q2 in the formula; in the formula, the following formula between Q1 and Q2 represents a single bond or a double bond; (AAA) R1 is a monovalent organic group having 1-20 carbon atoms, a nitro group, a hydroxyl group, an amino group, a thiol group, a cyano group, a carboxyl group or a halogen atom; when a plurality of R1 are present, the plurality of R1 are the same as or different from each other; m1 is an integer of 0-4; and Z + represents a monovalent onium cation). # imgabs0 #

This invention provides a chemically amplified resist composition that exhibits excellent LWR and resolution in far-ultraviolet lithography and EUV lithography, and can suppress resist pattern deformation, an onium salt used therein, and a pattern formation method using the resist composition. [Solution] An onium salt represented by the following formula (1). TIFF2026062943000253.tif35136

To provide an onium salt monomer used in a chemically amplified resist composition that, in photolithography using high-energy rays, exhibits excellent solvent solubility, high sensitivity, and high contrast, has excellent lithography properties such as EL, LWR, CDU, and DOF, is resistant to pattern collapse in fine pattern formation, and has excellent etching resistance, as well as to provide a polymer comprising repeat units derived from the onium salt monomer, a chemically amplified resist composition comprising the polymer, and a pattern forming method using the chemically amplified resist composition.SOLUTION: There is provided an onium salt monomer represented by the following formula (1).SELECTED DRAWING: None

The invention relates to a resist material and a pattern forming method. The present invention addresses the problem of providing: a resist material having high sensitivity regardless of the positive type or the negative type and improved LWR and CDU; and a pattern forming method using the same. [Solution] A resist material containing a dionium salt, a divalent anion containing an onium cation, and a benzene oxide anion structure substituted with an iodine atom and a fluorosulfonic acid anion structure bonded to an aromatic ring of the benzene oxide anion structure.