333 results about "Sulfonium" patented technology

The purpose of the present invention is to provide: a novel resist material which contains (A) a heteropoly acid salt that has a modified defect site and is represented by general formula (I) or a mixture of such heteropoly acid salts, said salt or mixture having a cation moiety into which a sulfonium cation, sulfonium dication, or iodonium cation having one or more polar groups that have an acid dissociable group has been introduced; a pattern formation method; and a patterned structure. (I) (Am+)a(Bn+)b(C(am + bn)-)

To provide a chemically amplified negative resist composition having improved resolution in pattern formation and giving a resist pattern with good LER and pattern fidelity, and to provide a method for forming a resist pattern.SOLUTION: (A) a photoacid generator comprising an anion having the formula (A1) and a cation having a specific structure, and (B) a base polymer comprising a recurring unit having a specific structure with a phenolic hydroxyl group on a side chain.SELECTED DRAWING: None

The invention discloses an anti-doodling superhard heat-insulating coating as well as a preparation method and application thereof, and relates to the technical field of heat-insulating coatings. The preparation method comprises the following steps: preparing ladder-type polysilsesquioxane from epoxy siloxane, then taking the ladder-type polysilsesquioxane and 2, 5-bis (trifluoromethyl)-3, 6-dioxaundecafluorononanoyl fluoride as raw materials, and successfully synthesizing fluorinated ladder-type polysilsesquioxane through chemical grafting of a fluorine-containing oligomer and the ladder-type polysilsesquioxane, so as to obtain the fluorinated ladder-type polysilsesquioxane. The preparation method comprises the following steps: preparing a fluorinated trapezoid polysilsesquioxane coating, mixing the fluorinated trapezoid polysilsesquioxane coating with a triaryl sulfonium hexafluoroantimonate mixture to prepare a fluorinated trapezoid polysilsesquioxane coating, and sequentially spin-coating a CWO coating and the fluorinated trapezoid polysilsesquioxane coating on a substrate for curing to obtain the anti-doodling superhard heat-insulating coating. The prepared anti-doodling superhard heat insulation coating has excellent anti-doodling performance, high hardness, good heat insulation effect and use stability, can be used for manufacturing energy-saving windows to prolong the service life of the energy-saving windows, and has important scientific research value and commercial application value.

The invention provides a solar cell and a preparation method thereof, electric equipment and power generation equipment. The solar cell comprises an active layer, the active layer comprises a light absorption layer, a passivation layer and a first carrier transport layer which are sequentially stacked from bottom to top, the passivation layer comprises a passivator, the passivator comprises cations, and the cations comprise one or more of sulfonium ions and phosphonium ions. The solar cell has excellent photoelectric conversion efficiency and stability.

To provide a novel sulfonium salt which has superior solvent solubility and sensitivity to ultra-short wavelength light, and which exhibits acid generation by rapid decomposition upon ultra-short wavelength light irradiation.SOLUTION: The present invention provides a sulfonium salt represented by formula (1), wherein Rf1, Rf2, Rf11, and Rf12 represent F or a fluoroalkyl group; Ra represents a hydroxy group or the like; m and n represent integers of 1 or more, provided that m+n is an integer of 5 or less; and X- represents a monovalent counter anion.SELECTED DRAWING: None

The invention relates to a method for purifying an electronic-grade sulfonium salt photoacid generator. The method comprises the following steps: heating, preparing a photoacid generator stock solution, purifying through ion exchange resin, cooling, recrystallizing, carrying out solid-liquid separation, washing crystals and the like to obtain the high-purity photoacid generator, so that the metal content in the photoacid generator can be effectively reduced, the single metal content is less than 5ppb, and the yield is up to 80-90%. And mother liquor is collected and purified by resin and can be used for preparing photoacid stock solution again. The operation effectively reduces the use of an organic solvent and the generation of wastewater, can further improve the recrystallization yield, and meets the requirements of green and sustainable development.

The invention relates to the fields of medicine, organic chemical industry and fine chemical industry, in particular to a method for synthesizing 1, 4-diketone by catalyzing alkenyl amide and alpha-carbonyl oxidized sulfonium ylide through photooxidation reduction. The preparation method comprises the following steps: under the protection of inert gas, reacting alkenyl amide and alpha-carbonyl oxidized sulfonium ylide serving as substrates in an organic solvent by taking a photosensitizer as a catalyst under the action of blue light irradiation and alkali at 30 DEG C for 18 hours to obtain an alkenyl amide alpha-carbonyl alkylate, and then hydrolyzing under an acidic condition to synthesize various asymmetric 1, 4-diketone compounds. The 1, 4-diketone compound is synthesized by a two-step method by taking alkenyl amide and alpha-carbonyl oxidized sulfonium ylide as initial raw materials, and the method has the remarkable advantages of wide substrate raw material sources, simplicity and convenience in operation, mild reaction conditions, high reaction efficiency, good universality, excellent functional group compatibility and the like.

The invention belongs to the technical field of aqueous zinc-iodine batteries, and particularly relates to an aqueous zinc-iodine battery with high area specific energy, quick charge and long service life and a preparation method. According to the high-area-specific-energy fast-charging long-life aqueous zinc-iodine battery provided by the invention, the aqueous zinc-iodine battery which is cooperatively modified by simultaneously introducing the organic sulfonium salt into the positive electrode and the electrolyte can stably provide the capacity of 3.3 mA h / cm < 2 > (the running duration exceeds 110 days, and the capacity retention rate is-100%) under the high load of 25 mg / cm < 2 >, and the ultrahigh rate performance of 100 mA / cm < 2 > is shown; a new scheme is provided for constructing the zinc-iodine battery with high magnification and long service life, and the zinc-iodine battery serves as an energy storage device with excellent performance and is applied to multiple fields such as peak regulation and frequency modulation of a power grid; the technical problem that a high-performance aqueous zinc-iodine battery is lacked in the prior art is solved.

The invention belongs to the technical field of organic chemical synthesis, and particularly relates to a novel method for synthesizing trifluoromethyl heteroaromatic hydrocarbon. The invention provides a novel method for synthesizing a trifluoromethyl heteroaromatic compound, the reaction system is mild, the substrate application range is wide, and the functional group compatibility is good. Specifically, in a rotating magnetic field, a metal conductor cuts magnetic induction lines to generate electron transfer, so that trifluoromethyl sulfosalt is reduced to generate trifluoromethyl free radicals, and the trifluoromethyl free radicals react with heteroaromatic hydrocarbon to synthesize trifluoromethyl heteroaromatic hydrocarbon. The method for synthesizing the trifluoromethyl heteroaromatic hydrocarbon comprises the following steps that firstly, heteroaromatic hydrocarbon, trifluoromethyl sulfosalt, a solvent and a metal rod are placed in a reaction tube and react in a multi-energy field coupling device, the magnetic field intensity (B) is set to be 0.01-3.00 T, the rotation frequency is set to be 5-50 Hz, the reaction time is set to be 1-24 h, finally, the trifluoromethyl heteroaromatic hydrocarbon is prepared, and the general formula of the trifluoromethyl heteroaromatic hydrocarbon is shown in the specification.

The present invention relates to a sulfonium sulfonate photoacid generator represented by Formula I, a synthesis method thereof, and a photoresist composition containing the photoacid generator. The photoacid generator of the present invention has a relatively large molecular weight, which can reduce diffusion of the photoacid generator during use, thereby improving the process window and edge roughness of the photoresist. Furthermore, the photoacid generator of the present invention is simple to prepare, and a high-purity product can be obtained through a simple recrystallization step. Furthermore, the photoacid generator of the present invention significantly improves the edge roughness and DOF of the resulting photolithographic pattern compared to existing photoacid generators for ArF lithography.

A chemically amplified positive resist composition containing a base polymer (A) which is a polymer whose solubility in an aqueous alkaline solution is increased by the action of an acid, contains a repeat unit containing an aromatic sulfonate anion having the formula (A1-1) and a sulfonium cation having the formula (A1-2) and a repeat unit having the formula (A2), and contains a polymer whose solubility in an aqueous alkaline solution is increased by the action of an acid.

A photoresist composition comprising one or more non-solvent alkali-insoluble substrates present in a total amount exceeding 50% by weight based on the total solids content of the photoresist composition, and a nonpolymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is defined by formula (1) as defined herein. [Formula 1] TIFF2026528972000047.tif49166(wherein b is an integer from 1 to 4, and at least one R) 1 (This is a group that is substituted with a halogen.) A photoresist composition comprising a nonpolymeric ionic photoacid generator compound and a solvent, as represented by [formula].

The invention relates to a silicon-containing sulfonium salt compound, a silicon-containing composition for forming a resist underlayer film, and a pattern forming method. Provided are: a composition for forming a silicon-containing resist underlayer film, which is capable of forming a silicon-containing resist underlayer film that has an appropriate etching rate in a multi-layer resist method and is capable of improving LWR and CDU in an ultra-fine pattern; a silicon-containing sulfonium salt compound contained in the composition; and a pattern forming method using the composition. A silicon-containing sulfonium salt compound characterized by being a substance represented by general formula (A-1). [chemical] # imgabs0 #

To provide photoactive compounds, photoresist compositions including the same, and pattern formation methods.SOLUTION: Provided is a photoactive compound comprising an organic cation selected from the group consisting of iodonium cations and sulfonium cations, and an anion represented by any one of Formulae (5a) to (5c).SELECTED DRAWING: None

Provided is a method for producing a nickel powder with which it is possible to suppress the generation of linked particles in a liquid-phase synthesis method without hindering the reduction reaction of a nickel salt. A method for producing a nickel powder, the method including a step for starting a nickel precipitation reaction in a reaction solution in which a nickel salt, a metal having a lower ionization tendency than nickel or a salt thereof, a reducing agent, an alkali metal hydroxide, a sulfonium salt, and water are mixed, the sulfonium salt being used in an amount of 100 mol% or more relative to the nickel in the reaction solution.

The invention discloses a synthesis method of a polysubstituted internal alkenyl phosphine oxide derivative. Internal alkenyl sulfonium salt which is simple, easy to prepare and high in reaction activity is used as a raw material, diaryl phosphine oxide is used as a coupling reagent, and the Z / E isomer of the polysubstituted internal alkenyl phosphine oxide derivative is simply and efficiently synthesized through a displacement substitution reaction. Compared with the reported alkenyl phosphine oxide synthesis method, the method has the characteristics of stable raw material structure, low price, easiness in obtaining, very mild reaction conditions, simplicity in experimental operation, high reaction efficiency and good functional group compatibility, and two isomer products Z / E can be obtained through one-step separation and purification.

A photoresist composition comprising one or more alkali-insoluble, non-solvent base materials present in a combined amount of more than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, the anion being represented by formula (1); a photodegradable quencher, a basic quencher or a combination thereof and a solvent: where Ar 1 for a monocyclic or polycyclic aromatic C 3-60 -Group stands; L 1 L represents a single bond or one or more binary linkage groups. 1 is free of fluorine; Z 1 an anion-stabilizing group, wherein Z 1is designed in such a way that it forms an intramolecular non-covalent bond with the sulfonate anion group, forming a ring with 5 to 8 atoms; and the remaining substituents are defined as shown here.

The invention discloses a method for efficiently separating arsenic from an arsenic-containing material through smelting of an oxygen-enriched side-blown molten pool. The treated arsenic-containing material, a flux and reduction coal are subjected to batching, a mixed material obtained after batching is continuously put into an oxygen-enriched side-blown molten pool smelting furnace, and oxygen-enriched air and gas fuel are blown into the smelting furnace for heating and high-temperature smelting; the materials are subjected to melting, reduction and slagging reaction in the smelting furnace; along with the reaction in the smelting furnace, the melt in the furnace is settled and layered, and alloy, sulfonium, furnace slag and high-temperature flue gas are obtained; generated alloy and sulfonium are discharged through a siphon port, and obtained slag is discharged through a slag discharging port; most arsenic and part of metal are volatilized and oxidized and enter high-temperature flue gas; and the generated high-temperature flue gas is subjected to cooling, high-temperature dust collection, shock cooling, low-temperature dust collection and tail gas treatment and then is discharged after reaching the standard. According to the method, the processes of matched treatment of the arsenic-containing materials, strengthened smelting and segmented dust collection are adopted, so that the arsenic content of the obtained crude arsenic oxide accounts for 70-75% of the total amount of the arsenic entering the furnace, the content of other metals is low, and the separation effect of the arsenic is good.

The invention relates to the technical field of organic chemistry, in particular to a method for synthesizing a benzothiophene coupling product through a non-metal-participated anchoring-migration strategy. The method comprises the following steps: taking a benzothiophene compound or a benzothiophene sulfoxide compound as a reaction substrate, mixing the reaction substrate with an aryl nucleophilic reagent in the presence of an anhydride activator and a solvent, and carrying out nucleophilic substitution reaction to obtain benzothiophene sulfonium salt; the preparation method comprises the following steps: mixing benzothiophene sulfonium salt with an organic solvent, and carrying out metal-catalysis-free intramolecular migration reaction to form a carbon-carbon bond at the C2 site of benzothiophene, thereby obtaining the benzothiophene coupling product. The preparation conditions are mild, the operation is simple and convenient, a traditional oxidation addition-reduction elimination process is replaced by an anchoring-migration strategy, protection of a noble metal catalyst, a complex ligand, strong base or inert gas is not needed, and the problems of high cost, metal residues, harsh reaction conditions and limited substrate applicability in the prior art are fundamentally solved.

The invention relates to a sulfonium salt type monomer, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention provides a sulfonium salt-type monomer represented by formula (A), a polymer containing a repeating unit derived from the sulfonium salt-type monomer, a chemically amplified resist composition containing the polymer, and a pattern forming method using the chemically amplified resist composition. (In the formula, Z-represents an aromatic sulfonic acid anion having a polymerizable group. ).

The present invention discloses a synthetic method for constructing a new C-C bond by the copper-catalyzed cross-coupling reaction of arylsulfonium salts with arylsilanes. The method uses arylsulfonium salts and arylsilanes as reaction raw materials, arylsulfonium salts as electrophilic reagents, and arylsilanes as nucleophilic reagents to synthesize biaryl compounds under the conditions of a catalyst / ligand / base / solvent. Among them, the catalyst is cuprous iodide, and 1,10-Phen and cesium fluoride are used as additives to achieve the synthesis of biaryl compounds at 70 °C. The reaction of the method of the present invention avoids the use of aryl halides and reduces environmental pollution. In addition, the reaction uses arylsulfonium salts as electrophilic reagents, improving the site selectivity of the reaction. The reaction avoids the use of organometallic reagents, avoiding the toxicity and instability of organometallic reagents. The reaction avoids the use of precious metal catalysts and uses inexpensive cuprous iodide as a metal catalyst, reducing the cost of synthesizing biaryl compounds.

The invention belongs to the field of organic chemical synthesis, and particularly relates to a synthesis method of triaryl sulfonium salt, which comprises the following steps: (1) dissolving a catalyst: dissolving the catalyst in an organic solvent in a preparation kettle in advance to form a uniform solution; and (2) continuous feeding and reaction: enabling reactants thionyl chloride and an aromatic hydrocarbon derivative and the catalyst-containing solution obtained in the step (1) to pass through a continuous reactor at a controllable flow rate, firstly carrying out Friedel-Crafts acylation reaction in an all-solvent system, then heating to carry out addition reaction, and finally obtaining the triaryl sulfonium salt. According to the invention, the problem of solid-liquid non-uniformity is eliminated, and the reaction efficiency and reproducibility are improved; the reaction is fast and uniform, and local overheating and out-of-control risks are avoided.

A photoresist composition comprising one or more non-solvent base-insoluble base materials present in a combined amount greater than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is represented by formula (1); a photodecomposable quencher, a basic quencher, or a combination thereof; and a solvent, wherein Ar 1 is a monocyclic or polycyclic C 3‑60 aromatic group; L 1 is a single bond or one or more divalent linking groups, wherein L 1 contains no fluorine; Z 1 comprises an anion stabilizing group, wherein Z 1 is configured to form an intramolecular non-covalent bond with a sulfonate anion group to form a ring having 5 to 8 atoms; and the remaining substituents are as defined herein. (1)

A resin composition according to the present disclosure is designed for use in optical waveguides. The resin composition contains an epoxy resin (A) and a photocuring agent (B). The epoxy resin (A) includes a solid bisphenol A epoxy compound (A-1) having an epoxy equivalent equal to or greater than 400 g / eq and equal to or less than 1500 g / eq. The photocuring agent (B) contains a sulfonium salt (B-1) having a cation including one or more fluorophenyl groups.

The invention relates to a sulfonium salt type monomer, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing a photolithographic film having excellent solvent solubility, high sensitivity, high contrast, and excellent photolithographic properties in optical lithography using high-energy rays. The present invention relates to a sulfonium salt-type monomer used in a chemically amplified resist composition having excellent photolithography properties such as EL, LWR, CDU, and DOF, a polymer containing a repeating unit derived from the sulfonium salt-type monomer, a chemically amplified resist composition containing the polymer, and a pattern forming method using the chemically amplified resist composition. [Solution] A sulfonium salt-type monomer represented by formula (A).

The invention provides a purification method of a high-purity electronic-grade photoacid generator derived from (4, 7-dihydroxy-1-naphthyl) dimethyl sulfonium trifluoromethanesulfonate. The problem that photo-acid cannot be purified by traditional recrystallization or directly through an ion exchange column and the like is solved, and the electronic grade standard is achieved. The preparation method comprises the following steps: firstly synthesizing (4, 8-dihydroxy-1-naphthyl) dimethyl sulfonium hydrochloride, then reacting with sodium trifluoromethanesulfonate to generate a crude product (4, 7-dihydroxy-1-naphthyl) dimethyl sulfonium trifluoromethanesulfonate, removing impurities from ethyl acetate, recrystallizing by using methanol and dichloromethane to obtain a pure product, and finally adsorbing by using resin to obtain the high-purity electronic-grade photoacid generator. According to the invention, the stability is high, the metal ion content is low, the purification process is convenient to process, the product is used as a photoresist-level core main material, the product is widely applied in the fields of semiconductor photoresist, other imaging systems, photocureable coatings and the like, the market scale is continuously expanded, and the product is an indispensable key material in semiconductor manufacturing and other related fields.

A method of manufacturing a photoelectric conversion element according to the present disclosure includes a step of forming a first electrode, a step of forming a photoelectric conversion layer, and a step of forming a second electrode. The step of forming the photoelectric conversion layer includes: preparing a mixed solution by mixing a solution in which at least one salt selected from the group consisting of a phosphonium salt and a sulfonium salt is dissolved with a precursor solution of a perovskite compound; and forming a coating film using the mixed solution.

A sulfonium salt represented by the following general formula (1). In formula, R1, R2, and R3 represent a fluorine atom, a hydroxy group, a trifluoromethyl group, a trifluoromethoxy group, a cyano group, a carbamoyl group, an amide group, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 15 carbon atoms and optionally having a heteroatom; “r” represents integer of 0 to 4, “p” represents integer of 0 to 5, “q” represents an integer of 0 to 5, “x” represents an integer of 0 to 4, “y” represents an integer of 0 to 5, “z” represents an integer of 0 to 5, and “r”, “p”, “q”, “x”, “y”, and “z” satisfy x+y+z≥1, 4≥r+x≥0, 5≥p+y≥0, and 5≥q+z≥0. This can provide an acid diffusion inhibitor used for a chemically-amplified resist material that does not cause impairing sensitivity in photolithography and is excellent in lithography performances such as CDU and LWR.

To provide a resist material having high sensitivity, high resolution, small LWR (line width roughness), good CDU (critical dimension uniformity) and a good pattern profile after exposure, and a pattern forming method.SOLUTION: In one aspect, the invention provides a resist composition comprising a base polymer comprising recurring units having the formula (a) and recurring units having a salt structure of sulfonium cation and sulfonate anion of specific structure, and an organic solvent.SELECTED DRAWING: None

A resist composition comprising a base polymer comprising repeat units having a salt structure consisting of a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having an acid labile group of triple bond-bearing tertiary ester type as the acid generator exhibits a high sensitivity and reduced LWR or improved CDU.