146 results about "Sulfonium" patented technology

The invention relates to a method for purifying an electronic-grade sulfonium salt photoacid generator. The method comprises the following steps: heating, preparing a photoacid generator stock solution, purifying through ion exchange resin, cooling, recrystallizing, carrying out solid-liquid separation, washing crystals and the like to obtain the high-purity photoacid generator, so that the metal content in the photoacid generator can be effectively reduced, the single metal content is less than 5ppb, and the yield is up to 80-90%. And mother liquor is collected and purified by resin and can be used for preparing photoacid stock solution again. The operation effectively reduces the use of an organic solvent and the generation of wastewater, can further improve the recrystallization yield, and meets the requirements of green and sustainable development.

A chemically amplified positive resist composition containing a base polymer (A) which is a polymer whose solubility in an aqueous alkaline solution is increased by the action of an acid, contains a repeat unit containing an aromatic sulfonate anion having the formula (A1-1) and a sulfonium cation having the formula (A1-2) and a repeat unit having the formula (A2), and contains a polymer whose solubility in an aqueous alkaline solution is increased by the action of an acid.

A photoresist composition comprising one or more alkali-insoluble, non-solvent base materials present in a combined amount of more than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, the anion being represented by formula (1); a photodegradable quencher, a basic quencher or a combination thereof and a solvent: where Ar 1 for a monocyclic or polycyclic aromatic C 3-60 -Group stands; L 1 L represents a single bond or one or more binary linkage groups. 1 is free of fluorine; Z 1 an anion-stabilizing group, wherein Z 1is designed in such a way that it forms an intramolecular non-covalent bond with the sulfonate anion group, forming a ring with 5 to 8 atoms; and the remaining substituents are defined as shown here.

The invention relates to the technical field of organic chemistry, in particular to a method for synthesizing a benzothiophene coupling product through a non-metal-participated anchoring-migration strategy. The method comprises the following steps: taking a benzothiophene compound or a benzothiophene sulfoxide compound as a reaction substrate, mixing the reaction substrate with an aryl nucleophilic reagent in the presence of an anhydride activator and a solvent, and carrying out nucleophilic substitution reaction to obtain benzothiophene sulfonium salt; the preparation method comprises the following steps: mixing benzothiophene sulfonium salt with an organic solvent, and carrying out metal-catalysis-free intramolecular migration reaction to form a carbon-carbon bond at the C2 site of benzothiophene, thereby obtaining the benzothiophene coupling product. The preparation conditions are mild, the operation is simple and convenient, a traditional oxidation addition-reduction elimination process is replaced by an anchoring-migration strategy, protection of a noble metal catalyst, a complex ligand, strong base or inert gas is not needed, and the problems of high cost, metal residues, harsh reaction conditions and limited substrate applicability in the prior art are fundamentally solved.

A photoresist composition comprising one or more non-solvent base-insoluble base materials present in a combined amount greater than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is represented by formula (1); a photodecomposable quencher, a basic quencher, or a combination thereof; and a solvent, wherein Ar 1 is a monocyclic or polycyclic C 3‑60 aromatic group; L 1 is a single bond or one or more divalent linking groups, wherein L 1 contains no fluorine; Z 1 comprises an anion stabilizing group, wherein Z 1 is configured to form an intramolecular non-covalent bond with a sulfonate anion group to form a ring having 5 to 8 atoms; and the remaining substituents are as defined herein. (1)

The invention relates to a sulfonium salt type monomer, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing a photolithographic film having excellent solvent solubility, high sensitivity, high contrast, and excellent photolithographic properties in optical lithography using high-energy rays. The present invention relates to a sulfonium salt-type monomer used in a chemically amplified resist composition having excellent photolithography properties such as EL, LWR, CDU, and DOF, a polymer containing a repeating unit derived from the sulfonium salt-type monomer, a chemically amplified resist composition containing the polymer, and a pattern forming method using the chemically amplified resist composition. [Solution] A sulfonium salt-type monomer represented by formula (A).

A resist composition comprising a base polymer comprising repeat units having a salt structure consisting of a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having an acid labile group of triple bond-bearing tertiary ester type as the acid generator exhibits a high sensitivity and reduced LWR or improved CDU.

The invention discloses a synthesis method of a high-abundance C-13 ethylene oxide compound, which comprises the following steps: (1) carrying out reaction on 13CH3I and diphenyl sulfide to obtain [13C] diphenylmethyl iodide; and (2) reacting the [13C] diphenylmethyl iodide with a carbonyl compound to obtain the high-abundance [13C] ethylene oxide compound. Diphenyl sulfide is adopted to replace dimethyl sulfide, the obtained [13C] methyl diphenyl sulfonium iodide avoids C-13 loss in the subsequent reaction process, and the abundance of C-13 is effectively improved.

The invention relates to a sulfonium salt type monomer, a sulfonium salt type quencher, a polymer, a chemically amplified resist composition, and a pattern forming method. The present invention addresses the problem of providing, in optical lithography using high-energy rays, excellent solvent solubility, high sensitivity, high contrast, excellent lithographic performance, and high pattern collapse resistance even when a fine pattern is formed. The sulfonium salt-type quenching agent is used as a sulfonium salt-type monomer which is a material of a polymer contained in a chemically amplified resist composition having excellent etching resistance, a sulfonium salt-type quenching agent comprising the sulfonium salt-type monomer, and a polymer containing a repeating unit derived from the sulfonium salt-type quenching agent. A chemically amplified resist composition containing a base polymer including the polymer, and a pattern forming method using the chemically amplified resist composition. [Solution] A sulfonium salt-type monomer characterized by being represented by general formula (a). [Chemical Formula 1]

A sulfonium salt monomer having the formula (A). The sulfonium salt monomer can be used for a chemically amplified resist composition having a high solvent solubility, a high sensitivity, and a high contrast, and being improved in lithography properties such as EL, LWR, CDU, and DOF, particularly when processed by photolithography using high-energy radiation such as KrF excimer laser, ArF excimer laser, an electron beam (EB), or EUV.

A molecular resist composition comprising a sulfonium salt having formula (1) or (2) and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.

The invention relates to a sulfonium salt, a chemically amplified positive resist composition and a resist pattern forming method. The present invention addresses the problem of providing: a chemically amplified positive resist composition having excellent solvent solubility and excellent lithography performance such as resolution, LER, and pattern shape in optical lithography using high-energy rays; and a pattern forming method using the chemically amplified resist composition. [Solution] A sulfonium salt represented by formula (A).

This invention provides an onium salt, a chemically amplified resist composition, and a pattern formation method for use in photolithography using energy rays, which are highly sensitive, have excellent resolution, improve lithography performance such as LWR, CDU, EL, and DOF, and suppress resist pattern deformation. [Solution] A sulfonium salt comprising a sulfonium cation and an aromatic carboxylic acid anion represented by the following formula (1A). TIFF2026076051000453.tif51137

The present invention is a sulfonium salt type monomer, wherein the sulfonium salt type monomer is represented by the following general formula (a). This can provide: a sulfonium salt type monomer used as a sulfonium salt type quencher that is a material for a polymer contained in a chemically amplified resist composition that has excellent solvent solubility, high sensitivity, high contrast, and excellent lithography performance in lithography using high-energy radiation, and is resistant to pattern collapse even in fine pattern formation and has excellent etching resistance; a sulfonium salt type quencher consisting of the sulfonium salt type monomer; a polymer containing a repeating unit derived from the sulfonium salt type quencher; a chemically amplified resist composition including a base polymer containing the polymer; and a pattern forming method using the chemically amplified resist composition.

A photoresist composition comprising one or more non-solvent base insoluble base materials present in a combined amount of greater than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation wherein the anion is represented by formula (1) as defined herein; and a solvent wherein the photoresist composition does not contain a photoacid generator that produces a photoacid having a higher acidity than a photoacid produced by a non-polymeric ionic photoacid generator compound. (1)

The invention discloses a sulfonium sulfonate photo-acid generator containing a quaternary carbon connection structure and a synthesis method of the sulfonium sulfonate photo-acid generator, and particularly provides a compound as shown in a formula I. The compound comprises anions and cations. The photoacid generator provided by the invention is high in stability, high in exposure energy and simple to prepare.

The present invention provides a heteropolyacid salt with a modified defect site or a mixture thereof, the heteropolyacid salt with a modified defect site or a mixture thereof characterized in that a cation part of the heteropolyacid salt with a modified defect site includes an organic sulfonium cation, and the organic sulfonium cation has one or more electron-withdrawing groups and a polar group having one or more acid-dissociable groups.

This radiation-sensitive composition comprises a polymer having an acid dissociable group and a compound represented by formula (1). In formula (1), X1 is *1-SO2-NH- or *1-NH-SO2-. *1 denotes an atomic bond with R1. With respect to R1 and A1, R1 is a monovalent organic group and A1 is a divalent organic group, or alternatively, R1 and A1 are combined with each other to form a group having a ring structure that contains -SO2-NH- in the ring skeleton. M+ is a substituted or unsubstituted iodonium cation or a sulfonium cation that has at least one group selected from the group consisting of a fluoro group, a bromo group, an iodo group, a haloalkyl group, a cyano group, a carbonyl group and a sulfonyl group. However, in cases where M+ is an unsubstituted iodonium cation, A1 has an aromatic ring.

The invention relates to a strong coordination type electrolyte with simple components, and belongs to the technical field of zinc-iodine battery electrolyte additives, and the electrolyte only contains zinc sulfate, an additive and water; the additive comprises any one of tetramethyl guanidine hydrochloride, betaine hydrochloride, sodium bromide, trimethyl ammonium bromide and trimethyl sulfoxide bromide. According to the electrolyte, hydrolysis failure of the electrolyte is inhibited by means of a strong coordination mode and efficient complexing I < + >, only a low-concentration single additive component is needed, and the electrolyte also keeps the advantage of high ionic conductivity of a water-based electrolyte and can accelerate substance transmission in a thick electrode, so that relatively high coulombic efficiency and cycling stability are realized under high iodine surface loading capacity; the invention also provides an ampere-hour level four-electron zinc-iodine soft package battery with high surface capacity, which can break through the performance bottleneck of the existing zinc-iodine battery in the aspect of practical application.

This invention discloses an additive for aqueous battery electrolytes and its application. The chemical formula of the additive for aqueous battery electrolytes is TX, specifically a salt or ionic liquid containing a non-hydrated cation; T is a non-hydrated cation, including pyridine cations (C5H5NR). + Quaternary phosphorus cation (R4P) + Triazole cation (C2H2N3R2) + Imidazole cation (C3H3N2R2) + pyrrolidine cation (C4H8NR2) + Piperidine cation (C5H) 10 NR2) + Guanidine cations (CN3R6) + morphazole cation (C4H8ONR2) + 2,2-oxazolidinyl cation (C3H6NOR2) + Amino acid cations (CH3NO2R2) + Sulfonium salt cation (R3S) + X is one or more of the following: other large metal cations with an ionic radius greater than 95 pm; X is an anion, including I... ‑ ,Br ‑ Cl ‑ F ‑ CF3SO3 ‑ (CF3SO2)2N ‑ F2N(SO2)2 ‑ H2PO4 ‑ RCOO ‑ BF4 ‑ One or more of them; during the charging process of an aqueous battery, the non-hydrated cations in the additive TX form a layer of hydrophobic cation molecular sieve on the surface of the battery negative electrode under the action of an electric field, preventing water molecules from undergoing hydrogen evolution on the surface of the battery negative electrode.

The invention provides a photoacid generator, a preparation method of the photoacid generator, a chemical amplification type photoresist and a preparation method of the chemical amplification type photoresist, and relates to the field of photoresist. The structural formula of the photoacid generator provided by the invention is shown in the specification, and the photoacid generator is sulfonium salt taking 5-tert-butyl-3-methyl-4-methylimidazo [1, 5-a] quinoline-3, 5-dicarboxylate as an acidic unstable group. The acidic unstable group is decomposed into an acid under high-energy radiation, the acidic unstable group is effectively decomposed into a carboxylic acid derivative and an imidazo [1, 5-a] quinoline derivative under the action of the acid and PDB (photolysis alkali), and the imidazo [1, 5-a] quinoline derivative can inhibit the diffusion rate of photoacid in the resist, so that the resistance of the resist is improved. Therefore, the dissolution rate of the photoresist in the developing solution after exposure is changed, and the problem of top loss after exposure and development of the photoresist is further solved.

The application relates to a synthesis method of a compound 4-bromo-5-(trifluoromethyl) thiophene-2-carboxylic acid methyl ester, characterized in that the synthesis method takes 4,5-dibromothiophene-2-methyl ester as raw material, takes cuprous halide as a catalyst, takes diphenyl(trifluoromethyl)sulfonium triflate as a trifluoromethyl reagent, and reacts at a selected temperature, so that 4-bromo-5-(trifluoromethyl) thiophene-2-carboxylic acid methyl ester is generated with high selectivity. The method is high in atom economy, simple to operate, high in regioselectivity, relatively mild in reaction conditions, and very suitable for industrial scale production.

A photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is represented by Formula (1): (1) wherein, in Formula (1), ring Cy1 is a C3-15 monoalicyclic group or a C6-15 polyalicyclic group,; each L1 is independently a single bond or one or more linking groups, wherein L1 is free of fluorine; each X1 is independently -O-, -S-, -N(R2)-, -C(O)-, -S(O)R2-, or -S(O2)R2-, wherein R2 is independently chosen from substituted or unsubstituted C1-20 alkyl, substituted or unsubstituted C1-20 heteroalkyl, substituted or unsubstituted C6-30 aryl, or substituted or unsubstituted C3-30 heteroaryl; each Z1 independently comprises an anion stabilizing group, wherein at least one Z1 is configured to form an intramolecular non-covalent bond with the sulfonate anion group to form a ring having from 5 to 8 ring atoms, wherein the remaining substituents are as provided herein.

The invention discloses a sulfonium sulfonate photoacid generator containing a carborane structure and application of the sulfonium sulfonate photoacid generator, and particularly provides a compound which is composed of anions and cations, the structure of the anions is shown as a formula (I) or a formula (II), and the structure of the cations is shown as a formula (I) or a formula (II). The photoacid generator provided by the invention is novel in structure, high in exposure energy and good in application prospect.

The invention relates to a method for preparing fenbendazole by taking m-dichlorobenzene as a raw material. The method comprises the following steps: nitrating m-dichlorobenzene to obtain 1, 3-dichloro-4-nitrobenzene; the 4-chloro-3-nitrodiphenyl sulfide reacts with thiophenol salt to obtain 4-chloro-3-nitrodiphenyl sulfide; reacting with ammonia to obtain 4-amino-3-nitrodiphenyl sulfide; reducing to obtain 3, 4-diaminodiphenyl sulfide; and finally, cyclizing with methyl cyanate to obtain benthioimidazole. The method has the advantages that cheap m-dichlorobenzene is used as a starting raw material, benzenethiol is efficiently synthesized through nitration, thiophenol substitution, ammoniation, reduction and cyclization reaction, the defect that expensive or difficult-to-obtain raw materials are used in the prior art is avoided, and the method is novel in route, simple and convenient to operate, mild in reaction condition, high in total yield and suitable for industrial production.

The invention relates to a sulfonium salt type monomer, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing a photolithographic composition having excellent solvent solubility, high sensitivity, high contrast, and excellent photolithographic properties in optical lithography using high-energy rays. The present invention relates to a sulfonium salt-type monomer used in a chemically amplified resist composition having excellent photolithography properties such as LWR, CDU, EL, and DOF, a polymer containing a repeating unit derived from the sulfonium salt-type monomer, a chemically amplified resist composition containing the polymer, and a pattern forming method using the chemically amplified resist composition. [Solution] A sulfonium salt-type monomer represented by formula (A).

The present invention relates to a sulfonium salt, a chemically amplified resist composition, and a pattern forming method. The present invention provides a sulfonium salt, a chemically amplified resist composition, and a pattern forming method for use in a chemically amplified resist composition which is excellent in sensitivity and resolution, can improve lithography properties such as LWR, CDU, EL, DOF, and can suppress collapse of a resist pattern in optical lithography using an energy ray. The solution means of the present invention is a sulfonium salt represented by the following formula (1). In the formula, Z ‑ represents an aromatic sulfonic acid anion having at least one cyclic structure.

The invention relates to a preparation method of a perovskite thin film and a solar cell. The invention provides a preparation method of a perovskite thin film. The preparation method comprises the following steps: preparing a perovskite precursor solution and a trimethylsulfonium salt post-treatment solution, forming the perovskite thin film on a substrate by using the perovskite precursor solution, and performing post-treatment on the formed perovskite thin film by using the trimethylsulfonium salt post-treatment solution to prepare the large-size grain perovskite thin film. According to the invention, the trimethyl sulfonium salt is introduced into the perovskite, the trimethyl sulfonium salt and the perovskite have strong interaction, and the phenomena of absorbing moisture and dissolving the perovskite can occur under the humidity condition. Meanwhile, due to the fact that the surface free energy of the large grains is different from that of the small grains, the small grains can generate a dynamic process that dissolution is larger than crystallization until disappearance, and the large grains can generate a dynamic process that crystallization is larger than dissolution. And finally, the Ovchwald ripening of the perovskite is realized at a relatively low temperature, and the perovskite thin film with high crystallinity, few grain boundaries and large-size grains is obtained.

The invention relates to a molecular resist composition and a pattern forming method. The present invention addresses the problem of providing: a molecular resist composition having excellent sensitivity, resolution, and LWR in optical lithography using high-energy rays; and a pattern forming method using the molecular resist composition. The present invention is a molecular resist composition characterized by containing a sulfonium salt represented by the following formula (1) or (2), a salt containing a cation represented by the following formula (1-1) and a halide ion, a nitrate ion, a hydrogen sulfate ion, a bicarbonate ion, a tetraphenylborate ion or an anion represented by any one of the following formulae (1-2)-(1-8), and an organic solvent, and no base polymer is contained.

A sulfonium salt monomer consists of a sulfonium cation having pentafluorosulfanyl and hydrocarbyloxycarbonyl groups and a fluorosulfonic acid anion having a polymerizable group. A resist composition comprising a polymer comprising repeat units derived from the monomer exhibits a high solvent solubility, high sensitivity and high contrast and forms a small-size pattern having satisfactory lithography properties such as LWR, CDU, EL and DOF.