257 results about "Sulfonium" patented technology

To provide a chemically amplified negative resist composition having improved resolution in pattern formation and giving a resist pattern with good LER and pattern fidelity, and to provide a method for forming a resist pattern.SOLUTION: (A) a photoacid generator comprising an anion having the formula (A1) and a cation having a specific structure, and (B) a base polymer comprising a recurring unit having a specific structure with a phenolic hydroxyl group on a side chain.SELECTED DRAWING: None

The invention discloses an anti-doodling superhard heat-insulating coating as well as a preparation method and application thereof, and relates to the technical field of heat-insulating coatings. The preparation method comprises the following steps: preparing ladder-type polysilsesquioxane from epoxy siloxane, then taking the ladder-type polysilsesquioxane and 2, 5-bis (trifluoromethyl)-3, 6-dioxaundecafluorononanoyl fluoride as raw materials, and successfully synthesizing fluorinated ladder-type polysilsesquioxane through chemical grafting of a fluorine-containing oligomer and the ladder-type polysilsesquioxane, so as to obtain the fluorinated ladder-type polysilsesquioxane. The preparation method comprises the following steps: preparing a fluorinated trapezoid polysilsesquioxane coating, mixing the fluorinated trapezoid polysilsesquioxane coating with a triaryl sulfonium hexafluoroantimonate mixture to prepare a fluorinated trapezoid polysilsesquioxane coating, and sequentially spin-coating a CWO coating and the fluorinated trapezoid polysilsesquioxane coating on a substrate for curing to obtain the anti-doodling superhard heat-insulating coating. The prepared anti-doodling superhard heat insulation coating has excellent anti-doodling performance, high hardness, good heat insulation effect and use stability, can be used for manufacturing energy-saving windows to prolong the service life of the energy-saving windows, and has important scientific research value and commercial application value.

The invention provides a solar cell and a preparation method thereof, electric equipment and power generation equipment. The solar cell comprises an active layer, the active layer comprises a light absorption layer, a passivation layer and a first carrier transport layer which are sequentially stacked from bottom to top, the passivation layer comprises a passivator, the passivator comprises cations, and the cations comprise one or more of sulfonium ions and phosphonium ions. The solar cell has excellent photoelectric conversion efficiency and stability.

The invention relates to a method for purifying an electronic-grade sulfonium salt photoacid generator. The method comprises the following steps: heating, preparing a photoacid generator stock solution, purifying through ion exchange resin, cooling, recrystallizing, carrying out solid-liquid separation, washing crystals and the like to obtain the high-purity photoacid generator, so that the metal content in the photoacid generator can be effectively reduced, the single metal content is less than 5ppb, and the yield is up to 80-90%. And mother liquor is collected and purified by resin and can be used for preparing photoacid stock solution again. The operation effectively reduces the use of an organic solvent and the generation of wastewater, can further improve the recrystallization yield, and meets the requirements of green and sustainable development.

The invention relates to the fields of medicine, organic chemical industry and fine chemical industry, in particular to a method for synthesizing 1, 4-diketone by catalyzing alkenyl amide and alpha-carbonyl oxidized sulfonium ylide through photooxidation reduction. The preparation method comprises the following steps: under the protection of inert gas, reacting alkenyl amide and alpha-carbonyl oxidized sulfonium ylide serving as substrates in an organic solvent by taking a photosensitizer as a catalyst under the action of blue light irradiation and alkali at 30 DEG C for 18 hours to obtain an alkenyl amide alpha-carbonyl alkylate, and then hydrolyzing under an acidic condition to synthesize various asymmetric 1, 4-diketone compounds. The 1, 4-diketone compound is synthesized by a two-step method by taking alkenyl amide and alpha-carbonyl oxidized sulfonium ylide as initial raw materials, and the method has the remarkable advantages of wide substrate raw material sources, simplicity and convenience in operation, mild reaction conditions, high reaction efficiency, good universality, excellent functional group compatibility and the like.

The invention belongs to the technical field of organic chemical synthesis, and particularly relates to a novel method for synthesizing trifluoromethyl heteroaromatic hydrocarbon. The invention provides a novel method for synthesizing a trifluoromethyl heteroaromatic compound, the reaction system is mild, the substrate application range is wide, and the functional group compatibility is good. Specifically, in a rotating magnetic field, a metal conductor cuts magnetic induction lines to generate electron transfer, so that trifluoromethyl sulfosalt is reduced to generate trifluoromethyl free radicals, and the trifluoromethyl free radicals react with heteroaromatic hydrocarbon to synthesize trifluoromethyl heteroaromatic hydrocarbon. The method for synthesizing the trifluoromethyl heteroaromatic hydrocarbon comprises the following steps that firstly, heteroaromatic hydrocarbon, trifluoromethyl sulfosalt, a solvent and a metal rod are placed in a reaction tube and react in a multi-energy field coupling device, the magnetic field intensity (B) is set to be 0.01-3.00 T, the rotation frequency is set to be 5-50 Hz, the reaction time is set to be 1-24 h, finally, the trifluoromethyl heteroaromatic hydrocarbon is prepared, and the general formula of the trifluoromethyl heteroaromatic hydrocarbon is shown in the specification.

A chemically amplified positive resist composition containing a base polymer (A) which is a polymer whose solubility in an aqueous alkaline solution is increased by the action of an acid, contains a repeat unit containing an aromatic sulfonate anion having the formula (A1-1) and a sulfonium cation having the formula (A1-2) and a repeat unit having the formula (A2), and contains a polymer whose solubility in an aqueous alkaline solution is increased by the action of an acid.

A photoresist composition comprising one or more non-solvent alkali-insoluble substrates present in a total amount exceeding 50% by weight based on the total solids content of the photoresist composition, and a nonpolymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is defined by formula (1) as defined herein. [Formula 1] TIFF2026528972000047.tif49166(wherein b is an integer from 1 to 4, and at least one R) 1 (This is a group that is substituted with a halogen.) A photoresist composition comprising a nonpolymeric ionic photoacid generator compound and a solvent, as represented by [formula].

To provide photoactive compounds, photoresist compositions including the same, and pattern formation methods.SOLUTION: Provided is a photoactive compound comprising an organic cation selected from the group consisting of iodonium cations and sulfonium cations, and an anion represented by any one of Formulae (5a) to (5c).SELECTED DRAWING: None

Provided is a method for producing a nickel powder with which it is possible to suppress the generation of linked particles in a liquid-phase synthesis method without hindering the reduction reaction of a nickel salt. A method for producing a nickel powder, the method including a step for starting a nickel precipitation reaction in a reaction solution in which a nickel salt, a metal having a lower ionization tendency than nickel or a salt thereof, a reducing agent, an alkali metal hydroxide, a sulfonium salt, and water are mixed, the sulfonium salt being used in an amount of 100 mol% or more relative to the nickel in the reaction solution.

A photoresist composition comprising one or more alkali-insoluble, non-solvent base materials present in a combined amount of more than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, the anion being represented by formula (1); a photodegradable quencher, a basic quencher or a combination thereof and a solvent: where Ar 1 for a monocyclic or polycyclic aromatic C 3-60 -Group stands; L 1 L represents a single bond or one or more binary linkage groups. 1 is free of fluorine; Z 1 an anion-stabilizing group, wherein Z 1is designed in such a way that it forms an intramolecular non-covalent bond with the sulfonate anion group, forming a ring with 5 to 8 atoms; and the remaining substituents are defined as shown here.

The invention relates to the technical field of organic chemistry, in particular to a method for synthesizing a benzothiophene coupling product through a non-metal-participated anchoring-migration strategy. The method comprises the following steps: taking a benzothiophene compound or a benzothiophene sulfoxide compound as a reaction substrate, mixing the reaction substrate with an aryl nucleophilic reagent in the presence of an anhydride activator and a solvent, and carrying out nucleophilic substitution reaction to obtain benzothiophene sulfonium salt; the preparation method comprises the following steps: mixing benzothiophene sulfonium salt with an organic solvent, and carrying out metal-catalysis-free intramolecular migration reaction to form a carbon-carbon bond at the C2 site of benzothiophene, thereby obtaining the benzothiophene coupling product. The preparation conditions are mild, the operation is simple and convenient, a traditional oxidation addition-reduction elimination process is replaced by an anchoring-migration strategy, protection of a noble metal catalyst, a complex ligand, strong base or inert gas is not needed, and the problems of high cost, metal residues, harsh reaction conditions and limited substrate applicability in the prior art are fundamentally solved.

The invention relates to a sulfonium salt type monomer, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention provides a sulfonium salt-type monomer represented by formula (A), a polymer containing a repeating unit derived from the sulfonium salt-type monomer, a chemically amplified resist composition containing the polymer, and a pattern forming method using the chemically amplified resist composition. (In the formula, Z-represents an aromatic sulfonic acid anion having a polymerizable group. ).

The invention belongs to the field of organic chemical synthesis, and particularly relates to a synthesis method of triaryl sulfonium salt, which comprises the following steps: (1) dissolving a catalyst: dissolving the catalyst in an organic solvent in a preparation kettle in advance to form a uniform solution; and (2) continuous feeding and reaction: enabling reactants thionyl chloride and an aromatic hydrocarbon derivative and the catalyst-containing solution obtained in the step (1) to pass through a continuous reactor at a controllable flow rate, firstly carrying out Friedel-Crafts acylation reaction in an all-solvent system, then heating to carry out addition reaction, and finally obtaining the triaryl sulfonium salt. According to the invention, the problem of solid-liquid non-uniformity is eliminated, and the reaction efficiency and reproducibility are improved; the reaction is fast and uniform, and local overheating and out-of-control risks are avoided.

A photoresist composition comprising one or more non-solvent base-insoluble base materials present in a combined amount greater than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is represented by formula (1); a photodecomposable quencher, a basic quencher, or a combination thereof; and a solvent, wherein Ar 1 is a monocyclic or polycyclic C 3‑60 aromatic group; L 1 is a single bond or one or more divalent linking groups, wherein L 1 contains no fluorine; Z 1 comprises an anion stabilizing group, wherein Z 1 is configured to form an intramolecular non-covalent bond with a sulfonate anion group to form a ring having 5 to 8 atoms; and the remaining substituents are as defined herein. (1)

The invention relates to a sulfonium salt type monomer, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing a photolithographic film having excellent solvent solubility, high sensitivity, high contrast, and excellent photolithographic properties in optical lithography using high-energy rays. The present invention relates to a sulfonium salt-type monomer used in a chemically amplified resist composition having excellent photolithography properties such as EL, LWR, CDU, and DOF, a polymer containing a repeating unit derived from the sulfonium salt-type monomer, a chemically amplified resist composition containing the polymer, and a pattern forming method using the chemically amplified resist composition. [Solution] A sulfonium salt-type monomer represented by formula (A).

The invention provides a purification method of a high-purity electronic-grade photoacid generator derived from (4, 7-dihydroxy-1-naphthyl) dimethyl sulfonium trifluoromethanesulfonate. The problem that photo-acid cannot be purified by traditional recrystallization or directly through an ion exchange column and the like is solved, and the electronic grade standard is achieved. The preparation method comprises the following steps: firstly synthesizing (4, 8-dihydroxy-1-naphthyl) dimethyl sulfonium hydrochloride, then reacting with sodium trifluoromethanesulfonate to generate a crude product (4, 7-dihydroxy-1-naphthyl) dimethyl sulfonium trifluoromethanesulfonate, removing impurities from ethyl acetate, recrystallizing by using methanol and dichloromethane to obtain a pure product, and finally adsorbing by using resin to obtain the high-purity electronic-grade photoacid generator. According to the invention, the stability is high, the metal ion content is low, the purification process is convenient to process, the product is used as a photoresist-level core main material, the product is widely applied in the fields of semiconductor photoresist, other imaging systems, photocureable coatings and the like, the market scale is continuously expanded, and the product is an indispensable key material in semiconductor manufacturing and other related fields.

A method of manufacturing a photoelectric conversion element according to the present disclosure includes a step of forming a first electrode, a step of forming a photoelectric conversion layer, and a step of forming a second electrode. The step of forming the photoelectric conversion layer includes: preparing a mixed solution by mixing a solution in which at least one salt selected from the group consisting of a phosphonium salt and a sulfonium salt is dissolved with a precursor solution of a perovskite compound; and forming a coating film using the mixed solution.

A sulfonium salt represented by the following general formula (1). In formula, R1, R2, and R3 represent a fluorine atom, a hydroxy group, a trifluoromethyl group, a trifluoromethoxy group, a cyano group, a carbamoyl group, an amide group, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 15 carbon atoms and optionally having a heteroatom; “r” represents integer of 0 to 4, “p” represents integer of 0 to 5, “q” represents an integer of 0 to 5, “x” represents an integer of 0 to 4, “y” represents an integer of 0 to 5, “z” represents an integer of 0 to 5, and “r”, “p”, “q”, “x”, “y”, and “z” satisfy x+y+z≥1, 4≥r+x≥0, 5≥p+y≥0, and 5≥q+z≥0. This can provide an acid diffusion inhibitor used for a chemically-amplified resist material that does not cause impairing sensitivity in photolithography and is excellent in lithography performances such as CDU and LWR.

To provide a resist material having high sensitivity, high resolution, small LWR (line width roughness), good CDU (critical dimension uniformity) and a good pattern profile after exposure, and a pattern forming method.SOLUTION: In one aspect, the invention provides a resist composition comprising a base polymer comprising recurring units having the formula (a) and recurring units having a salt structure of sulfonium cation and sulfonate anion of specific structure, and an organic solvent.SELECTED DRAWING: None

A resist composition comprising a base polymer comprising repeat units having a salt structure consisting of a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having an acid labile group of triple bond-bearing tertiary ester type as the acid generator exhibits a high sensitivity and reduced LWR or improved CDU.

The present invention provides a sulfonium salt represented by the following formula (1), a chemically amplified resist composition containing the sulfonium salt as a photoacid generator, and a pattern formation method using the chemically amplified resist composition: TIFF0007768456000572.tif30124 (in the formula, Z - is a fluoroalkanesulfonate anion having no polymerizable group.

To provide a chemically amplified positive resist composition containing an onium salt capable of generating an acid with small diffusion, and to provide a resist pattern forming method using the resist composition.SOLUTION: A chemically amplified positive resist composition comprising (A) a photoacid generator comprising an anion having the formula (A1) and a cation having a specific structure, and (B) a base polymer comprising a polymer comprising a recurring unit having a phenolic hydroxyl group on a side chain and adapted to be decomposed under the action of acid to increase its solubility in alkaline developer.SELECTED DRAWING: None

The invention discloses a synthesis method of a high-abundance C-13 ethylene oxide compound, which comprises the following steps: (1) carrying out reaction on 13CH3I and diphenyl sulfide to obtain [13C] diphenylmethyl iodide; and (2) reacting the [13C] diphenylmethyl iodide with a carbonyl compound to obtain the high-abundance [13C] ethylene oxide compound. Diphenyl sulfide is adopted to replace dimethyl sulfide, the obtained [13C] methyl diphenyl sulfonium iodide avoids C-13 loss in the subsequent reaction process, and the abundance of C-13 is effectively improved.

The invention relates to a sulfonium salt type monomer, a sulfonium salt type quencher, a polymer, a chemically amplified resist composition, and a pattern forming method. The present invention addresses the problem of providing, in optical lithography using high-energy rays, excellent solvent solubility, high sensitivity, high contrast, excellent lithographic performance, and high pattern collapse resistance even when a fine pattern is formed. The sulfonium salt-type quenching agent is used as a sulfonium salt-type monomer which is a material of a polymer contained in a chemically amplified resist composition having excellent etching resistance, a sulfonium salt-type quenching agent comprising the sulfonium salt-type monomer, and a polymer containing a repeating unit derived from the sulfonium salt-type quenching agent. A chemically amplified resist composition containing a base polymer including the polymer, and a pattern forming method using the chemically amplified resist composition. [Solution] A sulfonium salt-type monomer characterized by being represented by general formula (a). [Chemical Formula 1]

A sulfonium salt monomer having the formula (A). The sulfonium salt monomer can be used for a chemically amplified resist composition having a high solvent solubility, a high sensitivity, and a high contrast, and being improved in lithography properties such as EL, LWR, CDU, and DOF, particularly when processed by photolithography using high-energy radiation such as KrF excimer laser, ArF excimer laser, an electron beam (EB), or EUV.

A molecular resist composition comprising a sulfonium salt having formula (1) or (2) and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.

To provide a photosensitive composition having both etching resistance and lithography characteristics and capable of forming a pattern of fine dimensions, and a method for producing a patterned cured film.SOLUTION: The photosensitive composition includes a silicon-containing polymer (A) having a phenolic hydroxyl group and an alkali-soluble group protected by an acid-dissociable group, and a photoacid generator (B), wherein the photoacid generator (B) includes a photoacid generator (B1) having a sulphonium cation containing an iodine atom.SELECTED DRAWING: None

The invention relates to a sulfonium salt, a chemically amplified resist composition and a pattern forming method. The present invention provides a sulfonium salt represented by formula (1), a chemically amplified resist composition containing the sulfonium salt as a photoacid generator, and a pattern forming method using the chemically amplified resist composition. In the formula, Z-is a fluoroalkanesulfonic acid anion that does not have a polymerizable group.

The invention relates to a sulfonium salt, a chemically amplified positive resist composition and a resist pattern forming method. The present invention addresses the problem of providing: a chemically amplified positive resist composition having excellent solvent solubility and excellent lithography performance such as resolution, LER, and pattern shape in optical lithography using high-energy rays; and a pattern forming method using the chemically amplified resist composition. [Solution] A sulfonium salt represented by formula (A).