32results about How to "Smooth surface roughness" patented technology

A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO₂ gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxides formed from elements such as yttrium and gadolinium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO₂ gate oxides are provided. Also shown is a gate oxide with a conduction band offset in a range of approximately 5.16 eV to 7.8 eV. Gate oxides formed from elements such as zirconium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO₂ gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically stable such that the gate dielectrics formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The addition of nitrogen to the microstructure of the gate dielectric promotes an amorphous phase that further improves the electrical properties of the gate dielectric. The process shown is performed at lower temperatures than the prior art, which inhibits unwanted species migration and unwanted reactions with the silicon substrate or other structures. By using a thermal evaporation technique to first deposit a metal layer, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate dielectric.

Fabrication methods for capacitive micromachined ultrasonic transducers (CMUTS) with independent and precise gap and post thickness control are provided. The fabrication methods are based on local oxidation or local oxidation of silicon (LOCOS) to grow oxide posts. The process steps enable low surface roughness to be maintained to allow for direct wafer bonding of the membrane. In addition, methods for fabricating a step in a substrate are provided with reduced or minimal over-etch time by utilizing the nonlinearity of oxide growth. The fabrication methods of the present invention produce CMUTs with unmatched uniformity, low parasitic capacitance, and high breakdown voltage.

A flexible solar cell is achieved which has a high photoelectric conversion efficiency and no aged deterioration. A cell 10 (unit cell) is formed as a unit, comprising: a lower electrode layer 2 (Mo electrode layer) formed on a flexible mica sheet substrate 1 (substrate); a light absorber layer 3 (CIGS light absorber layer) which contains copper indium gallium selenide; a highly resistant buffer layer thin film 4 formed of InS, ZnS, CdS, or the like on the light absorber layer 3; and an upper electrode layer 5 (TCO) formed of ZuOAl or the like, and furthermore, a contact electrode section 6 for connecting between the upper electrode layer 5 and the lower electrode layer 2 is formed in order to connect a plurality of unit cells 10 in series. The contact electrode section 6 has a Cu/In ratio higher than that of the light absorber layer 3, and in other words, has less In contained therein to have a property of p+ (plus) type or a conductor relative to the light absorber layer 3 which is a p-type semiconductor.

The invention discloses a preparation process for a plate roller for printing. The process comprises the following steps that (1) manufacturing of a plate roller base body: the plate roller base body is manufactured from a specific formula of seamless steel tube; (2) copper plating treatment of the plate roller base body: the plate roller base body is subjected to copper plating in a plating tank containing a specific copper plating solution, and the thickness of a copper layer is 12-15 microns; (3) surface treatment of the plate roller base body: the copper surface is subjected to grinding treatment; (4) gumming of the plate roller: the plate roller subjected to copper plating and surface treatment is coated with a layer of glue solution with the thickness being 0.08-0.12mm and then is aired; (5) manufacturing of a laser image, laser engraving of the plate roller and developing of the plate roller; (6) corrosion to the plate roller: the plate roller is subjected to spray-type corrosion treatment with specific corrosive liquid; (7) cleaning of the plate roller: the plate roller is subjected to spray-type cleaning with specific cleaning fluid; and (8) chromium plating of the plate roller: the plate roller is subjected to chromium plating treatment in a plating tank containing a specific chromium plating solution, the thickness of a chromium layer is 5-8 microns. The preparation process has the advantage that the difference of the surface flatness of different positions of the same plate roller is reduced.

The invention discloses a short-range cutting method and device of rapid yarn electric spark wire cutting machine, which is characterized by the following: when the device adapts rapid yarn electric spark wire cutting machine to cut the element through electrode yarn, it makes the yarn cylinder motor of rapid yarn electric spark wire cutting machine rotate positively for t1 time to manufacture the element positively for t1 time; then the yarn cylinder motor is off for t2 time, which rotates yarn cylinder inversely for t3 time to cut element along inversed direction for t3 time; then the yarn cylinder motor is off for t2 time, which rotates yarn cylinder positively for t1 time to cut element for t1 time; the circulation continues with t1 different from t3.

A piston processing apparatus includes a work attaching head capable of fixing a piston material, a work rotating device, a grinding wheel, a grinding wheel rotating device, first and second moving mechanisms for moving the grinding wheel, a rotational angle detector for detecting a rotational angle of the work attaching head, a first and second position detectors for detecting a position of a grinding surface of the grinding wheel, a controller controls the first and second moving mechanisms to grind the outer circumferential surface by the grinding wheel based on target-position information of the grinding surface corresponding to a position on the outer circumferential surface of the piston material. According to the piston processing apparatus, the outer circumferential surface of the piston material can be processed into a three-dimensional shape with high-accuracy, and a piston that can improve fuel efficiency.

The invention provides a mould for an optic lens. The mould comprises an upper mould and a lower mould, wherein the end face of the lower mould forms a top surface, the outer edge around the top surface serves as an edge portion, and an inwards-recessed cavity is arranged at the center of the top surface. A runner and a sprue are sequentially arranged on the edge of the cavity towards the edge portion, an edge cutting area is defined by the intersecting edge of the cavity and the runner and the lateral wall of the cavity close to two sides of the runner, and the runner is communicated with the sprue through a communication channel. A step is formed at the intersecting position of the bottom surface of the edge cutting area and the bottom surface of the cavity, and the horizontal height of the bottom surface of the cavity is lower than that of the bottom surface of the edge cutting area at the position of the step. The edge of the original cavity close to the runner is inclined, so that when ejected, one side of the mould is free of extrusion of the lateral wall, labor is saved, and the product is not damaged. The step is arranged at the bottom of the cavity, and the deckle edge and the assembly face of the manufactured lens are not on the same plane, so that uneven stacking is avoided.

A toroidal roller bearing, which comprises an outer ring, an inner ring and a plurality of roller elements interposed between the outer and inner rings, wherein the toroidal roller bearing allows for angular and axial displacement between the outer ring and the inner ring. The bearing includes a cage for holding the roller elements, wherein the cage provides an axial guiding feature for axially guiding the roller elements against at least one of the outer ring, inner ring and a separate element located outside the toroidal roller bearing.

The embodiment of the invention provides a boring device for a tuyere large sleeve of a blast furnace. The boring device comprises a power system, a main shaft assembly, a positioning support, a feeding frame, a broach mechanism and a tool rest assembly, wherein the main shaft assembly comprises a hollow main shaft, and the main shaft is in transmission connection with the power system; the positioning support is connected with the main shaft assembly, and the positioning support is used for positioning the main shaft relative to the tuyere large sleeve; the feeding frame is fixedly connected with the main shaft, a strip-shaped groove is formed in the feeding frame, and the included angle between the strip-shaped groove and the axis of the main shaft is equal to the machining inclination of the tuyere large sleeve; the broach mechanism comprises a feeding lead screw, the feeding lead screw is arranged in the main shaft in a penetrating mode, and the feeding lead screw is in transmission connection with the main shaft; the tool rest assembly is in threaded connection with the feeding lead screw, and the feeding lead screw drives the tool rest assembly to conduct axial feeding; and the tool rest assembly is in sliding fit with the strip-shaped groove of the feeding frame, and when the tool rest assembly conducts axial feeding, the feeding frame drives the tool rest assembly to conduct radial feeding. The boring device has the characteristics of uniform cutting and convenience in operation.

Ultra smooth as-deposited composite nickel coatings for use in an information storage system are provided. The composite nickel coatings include an electrolessly deposited nickel layer formed on a sputter deposited nickel layer. The composite nickel coatings have an as-deposited surface roughness of less than about 10 Å. Embodiments include formation of the composite nickel coating on a disk, followed by deposition of an underlayer and magnetic layer thereon to form a magnetic recording medium.

The present invention provides a method of manufacturing a bonded wafer, including performing RTA under an atmosphere containing hydrogen on a bonded wafer after separating the bond wafer constituting the bonded wafer, and subsequently performing a sacrificial oxidation process to reduce the thickness of the thin film, wherein the RTA is performed under conditions of a retention start temperature of more than 1150° C. and a retention end temperature of 1150° C. or less. The invention can inhibit the BMD density from increasing and sufficiently flatten the surface of a thin film when the thin film of the bonded wafer is flattened and thinned by the combination of the RTA and sacrificial oxidation processes.

The invention discloses an inverted light-emitting element. The inverted light-emitting element structurally comprises a transparent substrate, a transparent bonding layer, an epitaxial layer, an insulating protection layer, a first welding electrode and a second welding electrode which are distributed from bottom to top; the epitaxial layer comprises a p-type conductive layer, a quantum well andan n-type conductive layer; the p-type conductive layer is connected with the transparent bonding layer, and the contact surface of the p-type conductive layer and the transparent bonding layer is a roughened surface; the edge of the epitaxial layer is etched until the transparent bonding layer is also etched and thinned to form a step; the surface of the thinned transparent bonding layer is at least lower than the lowest point of the roughened surface; partial regions of the n-type conductive layer and the quantum well are etched until the p-type conductive layer is exposed; the insulating protection layer covers the above structure; and the first welding electrode and the second welding electrode contact with the p-type conductive layer and the n-type conductive layer through the throughholes of the insulating protection layer. The reliability of the inverted light-emitting element is improved.

The invention discloses a 5G chip processing technology. The 5G chip processing technology comprises the following steps of: 1, carrying out primary cutting, grinding and lapping treatment on a gallium nitride wafer; 2, placing the lapped gallium nitride wafer on a precision polishing instrument for fine polishing treatment; and 3, washing the surfaces of the gallium nitride wafer after fine polishing with a cleaning agent, and then drying to obtain a radio-frequency chip material, wherein the precision polishing instrument in the step 2 comprises a protection box, a polishing bin, a driving bin, a bearing plate, a polishing groove, a maintaining mechanism, an ejecting device, a polishing device, a stroke device, an upper cover plate, a supercharging device arranged on the upper cover plate and a liquid feeding device arranged on the polishing bin. The flatness of the surfaces including the front surface and the back surface of the gallium nitride wafer can be improved to a new level through the precision polishing instrument, so that a 5G chip with better quality is produced, and the requirement of 5G communication is met.

The invention discloses a drilling tool for forming an R type center hole by one step. The drilling tool comprises a tool main body, wherein an R type chip cutting edge and a chip groove are arranged on the middle part at one end of the tool main body; a vertex angle is formed on the top of one end of the tool main body; and the chip groove is set into spiral type. The drilling tool disclosed by the invention has characteristics of being quick in chip cutting, smooth in chip removal, high in machining dimension precision and capable of forming by one step, can be widely applied to machining a center hole of a gearbox input and output gear shaft of a high-grade car gearbox with high precision requirements, and the product quality is greatly improved.