Inverted light-emitting element

Abstract

The invention discloses an inverted light-emitting element. The inverted light-emitting element structurally comprises a transparent substrate, a transparent bonding layer, an epitaxial layer, an insulating protection layer, a first welding electrode and a second welding electrode which are distributed from bottom to top; the epitaxial layer comprises a p-type conductive layer, a quantum well andan n-type conductive layer; the p-type conductive layer is connected with the transparent bonding layer, and the contact surface of the p-type conductive layer and the transparent bonding layer is a roughened surface; the edge of the epitaxial layer is etched until the transparent bonding layer is also etched and thinned to form a step; the surface of the thinned transparent bonding layer is at least lower than the lowest point of the roughened surface; partial regions of the n-type conductive layer and the quantum well are etched until the p-type conductive layer is exposed; the insulating protection layer covers the above structure; and the first welding electrode and the second welding electrode contact with the p-type conductive layer and the n-type conductive layer through the throughholes of the insulating protection layer. The reliability of the inverted light-emitting element is improved.

Description

technical field [0001] The invention relates to a flip-chip light-emitting element, which belongs to the field of semiconductor optoelectronic devices and technologies. Background technique [0002] The epitaxial structure of the flip-chip light-emitting element is bonded to the transparent substrate through a transparent bonding layer. Usually, in order to improve light extraction efficiency, the side in contact with the transparent bonding layer is a roughened surface, so the transparent bonding layer is deposited on the roughened surface. After the surface, a large number of voids will be generated at the interface, such as attached figure 1 As shown, the resulting problems: on the one hand, the void formed at the interface will become a channel for the intrusion of water vapor and metal ions, resulting in chip aging and failure; The exposed surface of the transparent bonding layer is also a rough surface, and there will also be voids between the insulating protective la...

AI Technical Summary

Problems solved by technology

[0002] The epitaxial structure of the flip-chip light-emitting element is bonded to the transparent substrate through a transparent bonding layer. Usually, in order to improve light extraction efficiency, the side in contact with the transparent bonding layer is a roughened surface, so the transparent bonding layer is deposited on the roughened surface. After the surface, a large number of voids will be generated at the interface, such as attached figure 1 As shown, the resulting problems: on the one hand, the void formed at the interface will become a channel for the intrusion of water vapor and metal ions, resulting in chip aging and failure; The surface of the exposed transparent bonding layer is also a rough surface, and there will also be voids between the insulating protective layer and the transparent bonding layer. At the same time, cracks may occur in the insulating protective layer itself, which will cause the protective function of the insulating protective layer to fail.

In practical production, we found that the solution and water vapor in the chip process may invade through the above-mentioned interface voids, causing the epitaxial layer to fall off; while in the reliability test, the intrusion of water vapor and metal ions in the die-bonding solder will lead to chip leakage failure

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