The invention discloses a
germanium wafer chamfering method based on
diameter optimization and double-
grinding-wheel step-by-step
grinding, and belongs to the technical field of
semiconductor material
machining. The method comprises the steps that in the
slicing process, the
diameter of a incoming
germanium wafer is machined to be 1200-1300 microns larger than the
diameter of a preset finished product, and sufficient chamfering
machining allowance is provided; then, a step-by-step chamfering process is adopted, firstly, a
metal bond
grinding wheel with the
abrasive particle size of 1000 meshes to 1500 meshes is used, and under the rotating speed of 2000 rpm to 4000 rpm and the feeding speed of 8 microns / s to 10 microns / s, rough chamfering
machining is conducted for 3 times to 4 times at the single-time feeding amount of 300 microns to 400 microns, and then rough chamfering machining is conducted for 3 times to 4 times at the rotating speed of 2000 rpm to 4000 rpm and the feeding speed of 8 microns / s to 10 microns; and then switching to a resin binder
grinding wheel with the
abrasive particle size of 2000 meshes to 4000 meshes, and performing fine chamfering
processing for 3 to 5 times at the rotating speed of 3000 rpm to 3500 rpm and the feeding speed of 5 mu m / s to 6 mu m / s at the single feeding amount of 10 mu m to 50 mu m. The problems that in a traditional method, the chamfering amount is insufficient, the machining efficiency and the surface quality cannot be considered at the same time, and the adaptability to large-diameter
germanium wafers is poor are solved, and the comprehensive qualification rate of the wafers is increased.