314 results about "Conduction band" patented technology

An electrode structure for a solid-state or semi-solid-state battery is provided in which NCM electrode particles coated with an interphase layer and a nitrogen-containing carbon layer are disposed. [Solution] The NCM electrode particles comprise NCM (nickel-cobalt-manganese oxide) particles (15), primary particles (30) that coat the outer surfaces of the NCM particles, an interphase layer (16) that includes a glass phase layer (241) and a plurality of ceramic particles (242), and a nitrogen-containing carbon layer (35) that coats the exterior of the primary particles. Nitrogen-doped carbon molecules in the nitrogen-containing carbon layer aid in the conduction of electrons and lithium ions, modifying the electrical potential of the NCM particles. The nitrogen-containing carbon layer is formed by coating the surfaces of the primary particles with a nitrogen-containing polymer material and calcining the material in an inert atmosphere. Conjugated bonds are formed between the carbon and nitrogen, modifying the energy band structure, reducing the energy required for electrons to transition to the conduction band, and improving overall electronic conductivity.

The invention relates to the technical field of semiconductor materials, and discloses a Si-doped epsilon-Ga2O3 material with high conductivity and deep ultraviolet light absorption performance and a preparation method, the doping concentration of Si in the Si-doped epsilon-Ga2O3 material is 0.83 at%-2.5 at%, and Si atoms replace tetrahedral coordinated Ga (1) atoms in epsilon-Ga2O3. By accurately controlling the Si doping concentration to be 0.83-2.5 at% and enabling Si atoms to replace tetrahedral coordinated Ga (1) atoms in epsilon-Ga2O3, the electronic structure of the material is effectively improved, the Fermi level moves upwards to enter a conduction band after Si doping, and Si3s orbital electrons occupy the conduction band bottom (CBM), so that the carrier concentration is increased, the effective mass of the electrons is reduced, and the conductivity of the material is remarkably improved; tests show that compared with an intrinsic epsilon-Ga2O3 material, the conductivity of the doped material is improved by 1-3 orders of magnitude, strict requirements of high-power electronic components and the like on the conductivity of the material are met, heat loss of the electronic components due to resistance is reduced, and the working efficiency and stability of the components are improved.

The invention, which relates to the technical field of the semiconductor laser chip, discloses a wide-temperature working high-power DFB semiconductor laser chip comprising a P-InGaAsP lower waveguide layer, an InGaAsP strain multiple quantum channel, an N-InGaAsP upper waveguide layer, an InAlAs-InP superlattice barrier layer, an N-InP spacing layer 1, an N-InGaAsP corrosion stop layer, an N-InP spacing layer 2, an N-InGaAsP grating layer, and an N-InP grating cover layer. According to the wide-temperature working high-power DFB semiconductor laser chip, a laser material structure is epitaxially grown on a P-InP substrate; a P-InP substrate is adopted, so that large-area back ohmic contact effectively reduces P-type series resistance of a device, and the problem of high heating of a traditional high-power laser is effectively solved; then, an InGaAsP strain compensation quantum well is adopted as a gain region, and wide-temperature single-mode work is realized by utilizing the advantage that an InGaAsP gain spectrum is insensitive to temperature; and the InAlAs-InP two-dimensional superlattice barrier structure is adopted to realize transverse and lateral limitation of carriers, so that the limiting efficiency of the carriers in a gain region is effectively improved, and the problem of low energy band difference of an InGaAsP conduction band is effectively solved.

The invention discloses a quantum correction method for drift diffusion transportation of a gallium nitride power device in advanced packaging and a three-dimensional integrated module electrothermal coupling simulation method. According to the method, a one-dimensional stationary Schrodinger equation and a two-dimensional Poisson equation are solved in a self-consistent mode, sub-band energy levels, corresponding wave functions and potential distribution in the quantum confinement direction are obtained, and the convergence of a self-consistent algorithm is improved by modifying the Poisson equation; quantum correction of the drift diffusion equation is realized by correcting the conduction band; starting from a quantum confinement effect and a drift diffusion transport theory, the quantum effect of two-dimensional electron gas in a triangular potential well formed by a gallium nitride polarization effect and a quantum correction method of a drift diffusion transport model are researched, and the steady-state operating characteristics of an advanced packaging power device containing the quantum effect are evaluated. And an electrothermal coupling simulation method of the device and the three-dimensional integrated module is further researched, the thermal management capability of the three-dimensional integrated module is evaluated, and the method has important application value.

The broadband coaxial-to-microstrip line converter comprises a coaxial line, a gold strip and a substrate, the coaxial line comprises a coaxial outer conductor, a central medium and a coaxial inner conductor which are arranged from outside to inside, the coaxial inner conductor at one end of the coaxial line is shorter than the coaxial outer conductor, and a containing space for installing the gold strip and the substrate is formed. The substrate comprises a top-layer conduction band, a middle insulating layer and a bottom-layer conduction band, the top-layer conduction band comprises a top-layer gradual change area and a microstrip line which are located on the same center line with the coaxial inner conductor, and the bottom-layer conduction band is provided with a gradual change hollow area right below the top-layer gradual change area to jointly form a mode gradual change area. According to the utility model, the structure is exquisite, a TEM mode transmitted in a coaxial line can be smoothly transited to a quasi TEM mode transmitted by a microstrip line, the working bandwidth of the whole conversion circuit is effectively improved, the working frequency can reach up to 50GHz, and the return loss of each frequency point is less than-15dB.

The invention provides an epitaxial structure of a semiconductor laser and a preparation method thereof. The epitaxial structure comprises a first waveguide layer, a first barrier layer, a first barrier layer, a quantum well layer, a second barrier layer, a second barrier layer and a second waveguide layer which are stacked from bottom to top. By adjusting different contents of an aluminum element and a gallium element in the first waveguide layer, the first barrier layer, the second barrier layer and the second waveguide layer, adjusting different contents of a gallium element and an indium element in the first barrier layer, and adjusting different contents of an aluminum element, a gallium element and an indium element in the second barrier layer, a first conduction band difference delta Ec11 is greater than 70meV, a second valence band difference delta Ev21 is greater than 240meV, and a second valence band difference delta Ev21 is greater than 240meV. The first valence band difference delta Ev11 and the second conduction band difference delta Ec21 are both smaller than or equal to 0 meV. The epitaxial structure can well balance the limiting effect on electrons and holes, so that the limiting capability of the epitaxial structure on current carriers is optimal, and the output efficiency of the device is improved.

The utility model discloses a quantum dot light emitting diode, a display substrate and a display device. The quantum dot light-emitting diode comprises a first electrode, a second electrode, and a quantum dot light-emitting layer, a first electron transport layer and a second electron transport layer which are arranged between the first electrode and the second electrode, wherein the first electron transport layer and the second electron transport layer are sequentially arranged on one side, close to the second electrode, of the quantum dot light-emitting layer; wherein the first electron transport layer and the second electron transport layer are made of inorganic nanoparticles, the conduction band bottom energy level of the first electron transport layer is matched with the conduction band bottom energy level of the quantum dot light-emitting layer, and the conduction band bottom energy level of the second electron transport layer is larger than the work function of the second electrode and smaller than the conduction band bottom energy level of the first electron transport layer; the carrier mobility of the second electron transport layer is greater than that of the first electron transport layer, and the second electron transport layer is configured to adjust the length of the optical microcavity between the first electrode and the second electrode.

The invention discloses a novel monolithic integrated lead sulfide detector and a preparation method thereof. The novel monolithic integrated lead sulfide detector sequentially comprises a bottom electrode layer, a hole transport layer, a P-type layer, an N-type layer, an electron transport layer and a top electrode layer, the P-type layer is used for absorbing photons, so that electrons in the P-type layer are transited to a conduction band, and holes are reserved in a valence band; the N-type layer is used for transmitting electrons, transmitting the electrons generated by the P-type layer to a conduction band of the N-type layer and enabling holes to stay in the P-type layer, and the electrons and the holes are separated in space; wherein the P-type layer comprises PbS (lead sulfide); and the N type layer comprises CdSe. According to the embodiment of the invention, the N-type layer of cadmium selenide and the P-type layer of PbS are utilized to construct a heterogeneous p-n junction, so that the monolithic integrated lead sulfide detector has a time constant of less than 1 microsecond, high-frame-rate work can be allowed, and rapid change of an object can be tracked.

The invention relates to a method for producing an NV centre in diamond (220), comprising the steps of: a) providing a diamond (220) having a surface (260); b) defining an implantation region (240) in the surface (260) of the diamond (220); c) N-doping the implantation region (240) of the diamonds (220) in order to raise the Fermi level in the implantation region (240) of the diamond (220) to a value of approximately -0.5 eV from the conduction band edge in the band gap of the diamond material of the diamond (220); d) defining an implantation position (230) in the surface (260) of the diamond (220); e) carrying out a second implantation of a nitrogen isotope by means of focused single-ion implantation with an implantation energy of 9.5 keV into the implantation region (240) of the diamond at the implantation position (230); f) heat treating the diamond (220) at more than 800°C. The method has the advantage whereby, in this way, deterministic NV centres can be produced at predetermined positions (230) in the surface (260) of a diamond (220).

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc / (Dc+Dv) is 65% or more.

The invention discloses a biplane tapered slot antenna, and belongs to the technical field of antennas. The antenna comprises a dielectric substrate, a metal radiation patch, a metal conduction band and a resistor. The radiation patch is arranged in a double-plane manner, so that the different-plane tapered slot line is constructed, and the impedance matching of the antenna is improved while the power capacity is improved. The metal radiation patch comprises an upper radiation patch and a lower radiation patch, the metal conduction band and the lower radiation patch form a microstrip line, and the resistor, the upper radiation patch and the lower radiation patch are connected in series into a whole, so that the effective suppression of the reflection voltage of the antenna is realized; therefore, resistance loading does not affect the radiation efficiency of the antenna. Technical index parameters such as power capacity, reflection voltage and radiation efficiency are considered at the same time, a technical scheme with excellent comprehensive performance is provided for ultra-wideband microwave pulse radiation, and the ultra-wideband microwave pulse radiation model can be used as an antenna basic model.

The invention belongs to the technical field of corrosion inhibition of ocean engineering structure metal materials, and particularly relates to an anti-corrosion, anti-fouling and antibacterial multifunctional Z-type heterojunction photo-anode and a preparation method thereof. The photoanode is of a Z-type heterojunction structure, and selective recombination of electron-hole pairs can be achieved, so that electrons with higher reducing capacity are reserved on a conduction band of one semiconductor, and holes with higher oxidizing capacity are reserved on a valence band of the other semiconductor. Photoelectrons are effectively injected into protected metal to realize photoelectric cathode protection; meanwhile, strong oxidizing holes and generated active oxygen species (such as. OH) can efficiently degrade organic matters and biological membranes, kill bacteria and inhibit algae, and the anti-corrosion, anti-fouling and anti-algae functions are synchronously achieved. The problem that a traditional photo-anode is single in function is solved, and the photo-anode has the advantages of being high in sunlight utilization rate, high in oxidation-reduction capacity, good in stability and the like and can be widely applied to the fields of ocean engineering corrosion prevention, medical instrument surface treatment, water treatment and the like.

The invention discloses a metal-semiconductor direct current friction nanometer generator based on a depletion mode u-GaN / AlGaN / AlN / GaN high electron mobility transistor. The generator comprises a titanium (Ti) metal friction layer and a depletion mode GaN HEMT friction layer, and direct current is generated through the interface friction volt effect. The core of the invention lies in that high-concentration two-dimensional electron gas (2DEG) and surface state characteristics in the u-GaN / AlGaN / AlN / GaN heterojunction are utilized, and the friction volt effect is combined, so that efficient mechanical energy-electric energy conversion is realized. In the dynamic Schottky contact of the D-GaN HEMT and metal, unbalanced carriers in u-GaN Cap are excited by friction, electrons and holes are separated by a built-in electric field, surface state electrons of u-GaN Cap obtain friction energy to be transited to a conduction band, and a Schottky barrier is overcome to form current; in the sliding process, metal and a semiconductor interact to increase the surface state density, a large number of electrons are excited, chemical bonds are formed, two-dimensional electron gas is formed on an AlN / GaN interface and flows back under a reverse electric field, the electron concentration is maintained, current is continuously generated, and finally direct current is formed in an external circuit.

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.

Some embodiments relate to A deep trench isolation (DTI) structure, including: a DTI core extending into a substrate; a first film surrounding the DTI core and having a first material with a first conduction band at a first band energy; a second film between the first film and the DTI core, the second film having a second material with a second conduction band at a second band energy less than the first band energy; and a third film between the second film and the DTI core, the third film having a third material with a third conduction band at a third band energy greater than the second band energy.

Photocatalytic sterilization technology is a technology that uses active substances generated by specific materials under light conditions to kill bacteria, viruses and other microorganisms. This technology mainly relies on the performance of photocatalytic materials, especially semiconductor materials such as titanium dioxide (TiO2). When the photocatalyst is irradiated by light of a specific wavelength, the electrons in the material transition from the valence band to the conduction band, forming electron-hole pairs. These electrons and holes have high chemical activity and can react with water or oxygen to generate free radicals with strong oxidizing ability, which can destroy the cell wall or cell membrane of microorganisms, causing the leakage of intracellular substances, thereby achieving the effect of sterilization. The present application aims to solve the problems of low light utilization rate and insufficient active sites of TiO2 photocatalytic materials, and proposes a TiO2@Ag / Ti-MOF functional material. The TiO2@Ag / Ti-MOF functional material is based on the Ti-MOF skeleton to construct Ag-MOF, realizing the controlled slow release of Ag ions and having a long-term effective sterilization effect.

This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.

The invention discloses a fine simulation method of a CdTe-based II-VI group compound thin film solar cell and a cell structure designed based on the method. According to the method, a physical model of a CdTe-based battery is established through numerical simulation, then the energy band structure of a carrier transport layer is systematically optimized, and the quantitative criteria that a hole transport layer needs to meet the requirements that the Fermi energy level is lower than that of an absorption layer and the hole transport layer has enough positive conduction band offset and an electron transport layer needs to have a wide band gap and moderate positive conduction band offset are determined. And for the optical layer, the optimal thickness of the antireflection layer is determined, the enhancement effect of the optical path gain of the textured structure on optical absorption is quantified, and the maximization of the light capture efficiency is realized. According to the method, through electrical-optical coupling simulation, the CdTe-based solar cell structure of which the conversion efficiency is remarkably improved can be accurately predicted and guided to be designed, the defects that a traditional experiment is high in trial and error cost and long in period are effectively overcome, and a reliable theoretical design and optimization tool is provided for research and development of a high-efficiency and low-cost CdTe-based solar cell.

The present disclosure relates to a stripline radio frequency device, comprising: an annular side wall, a bottom wall, and a cavity formed by the annular side wall and the bottom wall, wherein two filters are provided in the cavity, and the two filters respectively comprise metal conduction strips, the two metal conduction strips are connected via a common conduction strip, and the two metal conduction strips are respectively suspended and mounted on the bottom wall. In the technical solution provided by the embodiment of the present disclosure, a cavity is provided by the bottom wall and the annular side wall, and two filters are provided in the cavity, and respectively comprise metal conduction strips, the two metal conduction strips are respectively suspended and mounted on the bottom wall, and are connected via a common conduction strip, thereby simplifying the device structure and reducing the difficulty of assembly.

A semiconductor device includes a substrate, a gate stack structure, and a channel structure. The gate stack structure includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The channel structure at least partially penetrates the gate stack structure and extends in one direction. The channel structure includes: a channel layer coupled to the substrate; a ferroelectric layer at least partially surrounding the channel layer and including a ferroelectric material; and a charge-bound layer at least partially surrounding the ferroelectric material and including an insulating material. At least one of a conduction band level or a valence band level of the insulating material is disposed between a conduction band level and a valence band level of the ferroelectric material.

The invention discloses a light-electricity conversion device and a preparation method and application thereof. The light-electricity conversion device comprises a first electrode, a hole transport layer, a semiconductor function layer, an electron transport layer and a second electrode which are sequentially stacked. The conduction band energy level of the electron transport layer is matched with the conduction band energy level of the semiconductor function layer; the valence band energy level of the electron transport layer is deeper than that of the semiconductor function layer; the valence band energy level of the hole transport layer is matched with the valence band energy level of the semiconductor function layer; the conduction band energy level of the hole transport layer is shallower than the conduction band energy level of the semiconductor function layer. According to the photoelectric conversion device, through the arrangement of the hole transport layer and the electron transport layer, energy level arrangement in the device structure is optimized, extraction and injection of charges are balanced, dissociation and recombination of excitons in the semiconductor function layer are promoted, and the dual functions of photoelectric conversion and electro-photoelectric conversion are achieved in a single device.

The application belongs to the technical field of sensors, and discloses an ammonia gas-sensitive sensor and a preparation method thereof. The ammonia gas-sensitive sensor comprises an insulating substrate and an interdigital electrode, wherein: the interdigital electrode is arranged on the insulating substrate, and the surfaces of the interdigital electrode and the insulating substrate are both coated with a gas-sensitive coating; the raw material for preparing the gas-sensitive coating comprises a gas-sensitive material, and the chemical general formula of the gas-sensitive material is: Ba 1‑x Y x TiO3, wherein 0.002<=x<=0.01. The application introduces specific rare earth ions Y 3+ into the A-site of the BaTiO3 lattice for donor doping, utilizes Y 3+ to replace Ba 2+ , and generates a donor doping effect, which increases the free electron concentration in the conduction band of the material, not only significantly improves the initial conductivity of the material in the air, and provides an excellent signal base for resistance change, but also optimizes the concentration and activity of the surface adsorbed oxygen of the material, and realizes high-sensitivity and selectivity detection of ammonia gas.

The present application provides a perovskite solar cell and a photovoltaic module. The perovskite solar cell includes: a perovskite layer including a first surface and a second surface opposite to each other along its thickness direction; a hole transport layer disposed on the first surface; and an electron transport layer disposed on the second surface. The electron transport layer includes at least two sub-layers, the electron transport layer includes a doping material, and the bottom energy level of the conduction band of each sub-layer is lower than the bottom energy level of the conduction band of the hole transport layer; the top energy level of the valence band of each sub-layer is lower than the top energy level of the valence band of the hole transport layer. The energy level structure of the perovskite solar cell according to the embodiments of the present application can ensure the efficient transport of carriers and improve the photoelectric conversion efficiency of the perovskite solar cell.

A method for adjusting the wide spectrum detection of transition metal chalcogenides by using vacancy defects belongs to the field of two-dimensional materials. In the method, transition metal oxides are used as metal sources, two different chalcogen elements are used as sulfur sources, and a single-layer ternary transition metal chalcogen compound with uniform element distribution is grown by using a chemical vapor deposition method. By using the difference in the stability of the chemical bonds between alloy elements, the unstable chemical bonds are broken by hydrogen-assisted annealing, and the generated chalcogen element vacancy defects are uniformly distributed in the ternary transition metal chalcogen compound. The chalcogen element vacancy defects introduce defect energy levels between the conduction band and the valence band of the transition metal chalcogen compound, generate new photoluminescence peaks, and widen the spectrum detection range. The experimental method is simple in process, good in repeatability, can accurately control the type, distribution and number of defects, and is suitable for large-scale production.

The invention provides an n-type Mg3Bi2-based composite thermoelectric material as well as a preparation method and application thereof, the chemical composition of the n-type Mg3Bi2-based composite thermoelectric material is Mg 3.2 (Bi 0.7 Sb 0.3) 1.99 Te 0.01-Q2Se x wt%, Q is Cu and / or Ag element, and the sum of x wt% and x wt% is 100%. X is 0.0 lt; and x is less than or equal to 1.5. The invention also discloses a preparation method and application of the n-type Mg3Bi2-based composite thermoelectric material. The Fermi level of the n-type Mg3Bi2-based composite thermoelectric material goes deep into a conduction band, the electrical property is excellent, and the power factor is kept at a high level; the total thermal conductivity is reduced, so that the thermoelectric figure of merit of the n-type Mg3Bi2-based thermoelectric material is remarkably improved, and the n-type Mg3Bi2-based thermoelectric material has a wide application prospect in the field of semiconductor thermoelectric materials.

A semiconductor structure can comprise a plurality of first semiconductor layers comprising wide bandgap semiconductor layers, a narrow bandgap semiconductor layer, and a chirp layer between the plurality of first semiconductor layers and the narrow bandgap semiconductor layer. The values of overlap integrals between different electron wavefunctions in a conduction band of the chirp layer can be less than 0.1 for intersubband transition energies greater than 1.0 eV, and / or the values of overlaps between electron wavefunctions and barrier centers in a conduction band of the chirp layer can be less than 0.4 nm−1, when the structure is biased at an operating potential. The chirp layer can comprise a short-period superlattice with alternating wide bandgap barrier layers and narrow bandgap well layers, wherein the thickness of the barrier layers, or the well layers, or the thickness of both the barrier and well layers changes throughout the chirp layer.

The present application discloses an LED epitaxial structure for improving luminous efficiency and a manufacturing method thereof. The LED epitaxial structure includes: a substrate, and a buffer layer, an N-GaN layer, a multi-quantum well structure, and a P-GaN layer sequentially grown on one surface of the substrate; wherein, the multi-quantum well structure is formed by alternating multiple quantum barriers and quantum wells. The quantum well includes an InN layer, an InGaN layer, a GaN layer, and an AlInGaN layer sequentially grown on the quantum barrier. The GaN layer and the AlInGaN layer constitute a Cap layer. Between the N-GaN layer and the P-GaN layer, the Cap layer adopts a growth mode with a gradual change of Al / In, which can play a role in polarization matching, form a high conduction band barrier, and reduce electron leakage. And in the initial stage of the growth of the quantum well, a growth mode of pre-passing In is adopted to form InN clusters, increase the incorporation of In, thereby reducing threading dislocations and increasing radiative recombination luminescence.

The present invention relates to the field of semiconductor detection technology, and provides a four-probe measuring instrument, a four-probe measuring system, and a method for a four-probe measuring instrument to measure a wafer to be measured. The four-probe measuring instrument includes: four probes, the probes having channels penetrating up and down; a laser emitter, the laser emitted by the laser emitter passing through the channels from top to bottom and irradiating the wafer to be measured; a fixing plate, the fixing plate having holes opposite to the probes, the probes passing through the holes, the fixing plate being used for fixing the probes and blocking the laser outside the probes from irradiating the wafer to be measured. In the present invention, a semiconductor is irradiated with a laser to cause electrons to transition to the conduction band, and at the same time generate holes to form electron-hole pairs, thereby improving the contact characteristics, enabling a good ohmic contact to be formed between the probes and the surface of the silicon wafer to be measured, and improving the stability of silicon wafer measurement.

A semiconductor device with dual side source / drain (S / D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S / D regions within the superlattice structure, forming a gate structure between the first and second S / D regions, forming first and second contact structures on first surfaces of the first and second S / D regions, and forming a third contact structure, on a second surface of the first S / D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S / D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S / D region.

The application relates to application of Bi2O2Se in a photocatalytic nitrogen fixation reaction and belongs to the technical field of photocatalytic nitrogen reduction. The BOS catalyst with intrinsic weak hole oxidation capacity realizes efficient and stable photocatalytic ammonia synthesis without a sacrificial agent. The BOS has an optimized narrow band gap structure and a unique straddling energy band arrangement, the valence band position is shallow, the hole oxidation capacity is weak, the oxidation degradation of NH4 + Can be effectively inhibited, and the conduction band position is suitable, so that the thermodynamic driving force of nitrogen reduction is ensured. The catalyst has excellent light absorption capacity in a wide spectral range (extending to the near-infrared region), and the apparent quantum efficiency reaches 0.12% at a wavelength of 700 nm. The ammonia synthesis rate of the BOS without a sacrificial agent reaches 61 muM.h ‑1 -1, which is 8.3 times and 2.8 times that of carbon nitride and cadmium sulfide, and the catalyst maintains high activity in an air atmosphere, has excellent oxygen compatibility and cycle stability.