231 results about "Conduction band" patented technology

An electrode structure for a solid-state or semi-solid-state battery is provided in which NCM electrode particles coated with an interphase layer and a nitrogen-containing carbon layer are disposed. [Solution] The NCM electrode particles comprise NCM (nickel-cobalt-manganese oxide) particles (15), primary particles (30) that coat the outer surfaces of the NCM particles, an interphase layer (16) that includes a glass phase layer (241) and a plurality of ceramic particles (242), and a nitrogen-containing carbon layer (35) that coats the exterior of the primary particles. Nitrogen-doped carbon molecules in the nitrogen-containing carbon layer aid in the conduction of electrons and lithium ions, modifying the electrical potential of the NCM particles. The nitrogen-containing carbon layer is formed by coating the surfaces of the primary particles with a nitrogen-containing polymer material and calcining the material in an inert atmosphere. Conjugated bonds are formed between the carbon and nitrogen, modifying the energy band structure, reducing the energy required for electrons to transition to the conduction band, and improving overall electronic conductivity.

The invention, which relates to the technical field of the semiconductor laser chip, discloses a wide-temperature working high-power DFB semiconductor laser chip comprising a P-InGaAsP lower waveguide layer, an InGaAsP strain multiple quantum channel, an N-InGaAsP upper waveguide layer, an InAlAs-InP superlattice barrier layer, an N-InP spacing layer 1, an N-InGaAsP corrosion stop layer, an N-InP spacing layer 2, an N-InGaAsP grating layer, and an N-InP grating cover layer. According to the wide-temperature working high-power DFB semiconductor laser chip, a laser material structure is epitaxially grown on a P-InP substrate; a P-InP substrate is adopted, so that large-area back ohmic contact effectively reduces P-type series resistance of a device, and the problem of high heating of a traditional high-power laser is effectively solved; then, an InGaAsP strain compensation quantum well is adopted as a gain region, and wide-temperature single-mode work is realized by utilizing the advantage that an InGaAsP gain spectrum is insensitive to temperature; and the InAlAs-InP two-dimensional superlattice barrier structure is adopted to realize transverse and lateral limitation of carriers, so that the limiting efficiency of the carriers in a gain region is effectively improved, and the problem of low energy band difference of an InGaAsP conduction band is effectively solved.

The invention provides an epitaxial structure of a semiconductor laser and a preparation method thereof. The epitaxial structure comprises a first waveguide layer, a first barrier layer, a first barrier layer, a quantum well layer, a second barrier layer, a second barrier layer and a second waveguide layer which are stacked from bottom to top. By adjusting different contents of an aluminum element and a gallium element in the first waveguide layer, the first barrier layer, the second barrier layer and the second waveguide layer, adjusting different contents of a gallium element and an indium element in the first barrier layer, and adjusting different contents of an aluminum element, a gallium element and an indium element in the second barrier layer, a first conduction band difference delta Ec11 is greater than 70meV, a second valence band difference delta Ev21 is greater than 240meV, and a second valence band difference delta Ev21 is greater than 240meV. The first valence band difference delta Ev11 and the second conduction band difference delta Ec21 are both smaller than or equal to 0 meV. The epitaxial structure can well balance the limiting effect on electrons and holes, so that the limiting capability of the epitaxial structure on current carriers is optimal, and the output efficiency of the device is improved.

The invention relates to a method for producing an NV centre in diamond (220), comprising the steps of: a) providing a diamond (220) having a surface (260); b) defining an implantation region (240) in the surface (260) of the diamond (220); c) N-doping the implantation region (240) of the diamonds (220) in order to raise the Fermi level in the implantation region (240) of the diamond (220) to a value of approximately -0.5 eV from the conduction band edge in the band gap of the diamond material of the diamond (220); d) defining an implantation position (230) in the surface (260) of the diamond (220); e) carrying out a second implantation of a nitrogen isotope by means of focused single-ion implantation with an implantation energy of 9.5 keV into the implantation region (240) of the diamond at the implantation position (230); f) heat treating the diamond (220) at more than 800°C. The method has the advantage whereby, in this way, deterministic NV centres can be produced at predetermined positions (230) in the surface (260) of a diamond (220).

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc / (Dc+Dv) is 65% or more.

The invention discloses a biplane tapered slot antenna, and belongs to the technical field of antennas. The antenna comprises a dielectric substrate, a metal radiation patch, a metal conduction band and a resistor. The radiation patch is arranged in a double-plane manner, so that the different-plane tapered slot line is constructed, and the impedance matching of the antenna is improved while the power capacity is improved. The metal radiation patch comprises an upper radiation patch and a lower radiation patch, the metal conduction band and the lower radiation patch form a microstrip line, and the resistor, the upper radiation patch and the lower radiation patch are connected in series into a whole, so that the effective suppression of the reflection voltage of the antenna is realized; therefore, resistance loading does not affect the radiation efficiency of the antenna. Technical index parameters such as power capacity, reflection voltage and radiation efficiency are considered at the same time, a technical scheme with excellent comprehensive performance is provided for ultra-wideband microwave pulse radiation, and the ultra-wideband microwave pulse radiation model can be used as an antenna basic model.

The invention belongs to the technical field of corrosion inhibition of ocean engineering structure metal materials, and particularly relates to an anti-corrosion, anti-fouling and antibacterial multifunctional Z-type heterojunction photo-anode and a preparation method thereof. The photoanode is of a Z-type heterojunction structure, and selective recombination of electron-hole pairs can be achieved, so that electrons with higher reducing capacity are reserved on a conduction band of one semiconductor, and holes with higher oxidizing capacity are reserved on a valence band of the other semiconductor. Photoelectrons are effectively injected into protected metal to realize photoelectric cathode protection; meanwhile, strong oxidizing holes and generated active oxygen species (such as. OH) can efficiently degrade organic matters and biological membranes, kill bacteria and inhibit algae, and the anti-corrosion, anti-fouling and anti-algae functions are synchronously achieved. The problem that a traditional photo-anode is single in function is solved, and the photo-anode has the advantages of being high in sunlight utilization rate, high in oxidation-reduction capacity, good in stability and the like and can be widely applied to the fields of ocean engineering corrosion prevention, medical instrument surface treatment, water treatment and the like.

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.

Some embodiments relate to A deep trench isolation (DTI) structure, including: a DTI core extending into a substrate; a first film surrounding the DTI core and having a first material with a first conduction band at a first band energy; a second film between the first film and the DTI core, the second film having a second material with a second conduction band at a second band energy less than the first band energy; and a third film between the second film and the DTI core, the third film having a third material with a third conduction band at a third band energy greater than the second band energy.

Photocatalytic sterilization technology is a technology that uses active substances generated by specific materials under light conditions to kill bacteria, viruses and other microorganisms. This technology mainly relies on the performance of photocatalytic materials, especially semiconductor materials such as titanium dioxide (TiO2). When the photocatalyst is irradiated by light of a specific wavelength, the electrons in the material transition from the valence band to the conduction band, forming electron-hole pairs. These electrons and holes have high chemical activity and can react with water or oxygen to generate free radicals with strong oxidizing ability, which can destroy the cell wall or cell membrane of microorganisms, causing the leakage of intracellular substances, thereby achieving the effect of sterilization. The present application aims to solve the problems of low light utilization rate and insufficient active sites of TiO2 photocatalytic materials, and proposes a TiO2@Ag / Ti-MOF functional material. The TiO2@Ag / Ti-MOF functional material is based on the Ti-MOF skeleton to construct Ag-MOF, realizing the controlled slow release of Ag ions and having a long-term effective sterilization effect.

This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.

The invention discloses a fine simulation method of a CdTe-based II-VI group compound thin film solar cell and a cell structure designed based on the method. According to the method, a physical model of a CdTe-based battery is established through numerical simulation, then the energy band structure of a carrier transport layer is systematically optimized, and the quantitative criteria that a hole transport layer needs to meet the requirements that the Fermi energy level is lower than that of an absorption layer and the hole transport layer has enough positive conduction band offset and an electron transport layer needs to have a wide band gap and moderate positive conduction band offset are determined. And for the optical layer, the optimal thickness of the antireflection layer is determined, the enhancement effect of the optical path gain of the textured structure on optical absorption is quantified, and the maximization of the light capture efficiency is realized. According to the method, through electrical-optical coupling simulation, the CdTe-based solar cell structure of which the conversion efficiency is remarkably improved can be accurately predicted and guided to be designed, the defects that a traditional experiment is high in trial and error cost and long in period are effectively overcome, and a reliable theoretical design and optimization tool is provided for research and development of a high-efficiency and low-cost CdTe-based solar cell.

The present disclosure relates to a stripline radio frequency device, comprising: an annular side wall, a bottom wall, and a cavity formed by the annular side wall and the bottom wall, wherein two filters are provided in the cavity, and the two filters respectively comprise metal conduction strips, the two metal conduction strips are connected via a common conduction strip, and the two metal conduction strips are respectively suspended and mounted on the bottom wall. In the technical solution provided by the embodiment of the present disclosure, a cavity is provided by the bottom wall and the annular side wall, and two filters are provided in the cavity, and respectively comprise metal conduction strips, the two metal conduction strips are respectively suspended and mounted on the bottom wall, and are connected via a common conduction strip, thereby simplifying the device structure and reducing the difficulty of assembly.

A semiconductor device includes a substrate, a gate stack structure, and a channel structure. The gate stack structure includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The channel structure at least partially penetrates the gate stack structure and extends in one direction. The channel structure includes: a channel layer coupled to the substrate; a ferroelectric layer at least partially surrounding the channel layer and including a ferroelectric material; and a charge-bound layer at least partially surrounding the ferroelectric material and including an insulating material. At least one of a conduction band level or a valence band level of the insulating material is disposed between a conduction band level and a valence band level of the ferroelectric material.

The application belongs to the technical field of sensors, and discloses an ammonia gas-sensitive sensor and a preparation method thereof. The ammonia gas-sensitive sensor comprises an insulating substrate and an interdigital electrode, wherein: the interdigital electrode is arranged on the insulating substrate, and the surfaces of the interdigital electrode and the insulating substrate are both coated with a gas-sensitive coating; the raw material for preparing the gas-sensitive coating comprises a gas-sensitive material, and the chemical general formula of the gas-sensitive material is: Ba 1‑x Y x TiO3, wherein 0.002<=x<=0.01. The application introduces specific rare earth ions Y 3+ into the A-site of the BaTiO3 lattice for donor doping, utilizes Y 3+ to replace Ba 2+ , and generates a donor doping effect, which increases the free electron concentration in the conduction band of the material, not only significantly improves the initial conductivity of the material in the air, and provides an excellent signal base for resistance change, but also optimizes the concentration and activity of the surface adsorbed oxygen of the material, and realizes high-sensitivity and selectivity detection of ammonia gas.

A method for adjusting the wide spectrum detection of transition metal chalcogenides by using vacancy defects belongs to the field of two-dimensional materials. In the method, transition metal oxides are used as metal sources, two different chalcogen elements are used as sulfur sources, and a single-layer ternary transition metal chalcogen compound with uniform element distribution is grown by using a chemical vapor deposition method. By using the difference in the stability of the chemical bonds between alloy elements, the unstable chemical bonds are broken by hydrogen-assisted annealing, and the generated chalcogen element vacancy defects are uniformly distributed in the ternary transition metal chalcogen compound. The chalcogen element vacancy defects introduce defect energy levels between the conduction band and the valence band of the transition metal chalcogen compound, generate new photoluminescence peaks, and widen the spectrum detection range. The experimental method is simple in process, good in repeatability, can accurately control the type, distribution and number of defects, and is suitable for large-scale production.

A semiconductor structure can comprise a plurality of first semiconductor layers comprising wide bandgap semiconductor layers, a narrow bandgap semiconductor layer, and a chirp layer between the plurality of first semiconductor layers and the narrow bandgap semiconductor layer. The values of overlap integrals between different electron wavefunctions in a conduction band of the chirp layer can be less than 0.1 for intersubband transition energies greater than 1.0 eV, and / or the values of overlaps between electron wavefunctions and barrier centers in a conduction band of the chirp layer can be less than 0.4 nm−1, when the structure is biased at an operating potential. The chirp layer can comprise a short-period superlattice with alternating wide bandgap barrier layers and narrow bandgap well layers, wherein the thickness of the barrier layers, or the well layers, or the thickness of both the barrier and well layers changes throughout the chirp layer.

A semiconductor device with dual side source / drain (S / D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S / D regions within the superlattice structure, forming a gate structure between the first and second S / D regions, forming first and second contact structures on first surfaces of the first and second S / D regions, and forming a third contact structure, on a second surface of the first S / D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S / D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S / D region.

The application relates to application of Bi2O2Se in a photocatalytic nitrogen fixation reaction and belongs to the technical field of photocatalytic nitrogen reduction. The BOS catalyst with intrinsic weak hole oxidation capacity realizes efficient and stable photocatalytic ammonia synthesis without a sacrificial agent. The BOS has an optimized narrow band gap structure and a unique straddling energy band arrangement, the valence band position is shallow, the hole oxidation capacity is weak, the oxidation degradation of NH4 + Can be effectively inhibited, and the conduction band position is suitable, so that the thermodynamic driving force of nitrogen reduction is ensured. The catalyst has excellent light absorption capacity in a wide spectral range (extending to the near-infrared region), and the apparent quantum efficiency reaches 0.12% at a wavelength of 700 nm. The ammonia synthesis rate of the BOS without a sacrificial agent reaches 61 muM.h ‑1 -1, which is 8.3 times and 2.8 times that of carbon nitride and cadmium sulfide, and the catalyst maintains high activity in an air atmosphere, has excellent oxygen compatibility and cycle stability.

The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1<(Ec+Ev) / 2, and when the first semiconductor layer is of a p-type conductivity, the work function WF1 fulfills WF1>(Ec+Ev) / 2.

The invention belongs to the technical field of laser, and particularly discloses a high-efficiency laser chip of a direct pumping light-emitting layer and a laser, and the laser chip comprises a substrate layer, an integrated broadband reflector, an integrated active region, a window layer and a protection layer which are sequentially arranged. The integrated broadband integrated active area comprises a plurality of active groups, each active group comprises spacing layers and light-emitting layers, and the spacing layers and the light-emitting layers are alternately arranged; after the light-emitting layer absorbs photon energy of pump light, a carrier at the top of a material valence band of the light-emitting layer is excited to a material sub-energy level of the light-emitting layer and then relaxed to the bottom of a material conduction band of the light-emitting layer, and stimulated radiative transition is generated in the light-emitting layer. According to the invention, the light-emitting layer of the active area can be directly pumped, so that the wavelength of the pumping light source required by the laser chip is close to the laser wavelength, thereby greatly improving the light-light conversion efficiency of the chip, reducing the quantum loss in the laser generation process, reducing the waste heat in the laser chip, relieving the heat effect of the laser, and improving the production efficiency of the laser chip. The output power of the laser is improved.

This invention discloses a photocatalyst with a dual heterojunction structure, its preparation method, and its application. First, a solution containing iodide and a solution containing bismuth salt are mixed and the pH is adjusted to alkaline. A hydrothermal reaction is then carried out at 150–200°C. The resulting product is washed and dried to obtain product BiOI. Next, the prepared BiOI is calcined at 350–420°C to obtain product BiOI / Bi5O7I. Then, BiOI / Bi5O7I and Mn3O4 are dissolved in a first organic solvent, followed by a hydrothermal reaction at 150–200°C. The resulting product is washed and dried to obtain product Mn3O4 / BiOI / Bi5O7I. This invention introduces a Mn3O4 / BiOI / Bi5O7I dual heterojunction constructed using Mn3O4 as a redox electron mediator, ensuring that the photocatalyst maintains a suitable valence band position, thereby maintaining a strong redox reaction capability. Therefore, it can effectively remove NO and inhibit the formation of NO2 toxic byproducts.

The invention relates to a quantum dot electroluminescent device which comprises a quantum dot luminescent layer, an electronic function layer and an adjusting layer located between the quantum dot luminescent layer and the electronic function layer, and the quantum dot luminescent layer comprises a blue light luminescent layer. The conduction band energy level of the adjusting layer is located between the conduction band energy level of the electronic function layer and the conduction band energy level of the blue light emitting layer. According to the quantum dot electroluminescent device adopting the technical scheme, the conduction band energy level of the adjusting layer is located between the conduction band energy level of the electronic function layer and the conduction band energy level of the blue light emitting layer, the adjusting layer can serve as an injection step to facilitate electron injection for blue light, and the adjusting layer can serve as an electron blocking material for red light and green light to facilitate electron injection. And electron injection is reduced. Therefore, the adjusting layer can enhance the electron supply of the blue light device and weaken the electron mobility of the red light device, thereby improving the carrier balance of the red, green and blue light devices, improving the display effect and being beneficial to wide application.

This invention relates to the field of solar photovoltaic technology, specifically to a perovskite solar cell and its fabrication method. In the fabrication method of the perovskite solar cell, an electron transport layer is formed using ion-assisted deposition technology; wherein the angle formed between the direction from the center of the target material to the center of the substrate and the emission direction of the ion beam is greater than or equal to 90° and less than 180°, the target material is at least one of a sulfide or a selenide, and the conduction band bottom of the target material is lower than the conduction band bottom of the perovskite layer. The above-mentioned fabrication method of the perovskite solar cell easily ensures both processing efficiency and cell performance.

The application discloses a stripline broadband two-dimensional hybrid network and a multifunctional hybrid network, the two-dimensional hybrid network comprising, from top to bottom, an upper dielectric plate, an upper half-cured sheet, an intermediate dielectric plate, a lower half-cured sheet and a lower dielectric plate, and further comprising metallized through holes penetrating through the whole two-dimensional hybrid network, characterized in that the upper surface of the upper dielectric plate is covered by an upper anti-interference layer, the lower surface of the lower dielectric plate is covered by a lower anti-interference layer, and the metallized through holes penetrate through the upper anti-interference layer and the lower anti-interference layer; the upper and lower surfaces of the intermediate dielectric plate are both provided with a conducting band, the conducting band and the edge overlapping part of the intermediate dielectric plate form a port, the conducting band parts overlap, and the overlapping area forms four constant offset couplers, and the four constant offset couplers are cascaded to form the stripline broadband two-dimensional hybrid network. The application provides a stripline broadband two-dimensional hybrid network and a multifunctional hybrid network with high integration, wide bandwidth and easy integration with an antenna and a radio frequency circuit.

The application discloses an epitaxial structure and method of a high-linearity AlGaN / GaN heterojunction, which sequentially comprises a single-crystal substrate, an AlN nucleation layer, a GaN buffer layer, a GaN channel layer, an AlGaN channel layer, a first AlGaN barrier layer and a second AlGaN barrier layer. The technical scheme uses epitaxial technologies such as metal organic chemical vapor deposition (MOCVD), adopts a high-temperature and low-rate process for the GaN channel layer, improves the crystallization quality and surface morphology of the GaN channel layer, and is favorable for reducing the defect density of the subsequent AlGaN channel layer and barrier layer. The AlGaN channel layer structure is introduced, the small conduction band step of the AlGaN channel layer / GaN channel layer is used, three-dimensional distribution of an electron gas in the GaN / AlGaN composite channel layer is realized, the first AlGaN barrier layer structure of polarization modulation doping is introduced, the electron gas penetrates into the barrier layer, and the three-dimensional depth of the electron gas is further widened, the second AlGaN barrier layer with strong polarization is used, the electron gas surface density and the transconductance peak value are improved, and the application is suitable for the development of a high-linearity GaN radio frequency device.

This photodetector comprises a first electroconductor layer (first metal electrode and contact layer 101), a detection layer, and a second electroconductor layer (contact layer 109 and second metal electrode) disposed in that order from a first surface side, wherein: the detection layer comprises a quantum well in which a first barrier layer (102), a first well layer (103) that is an excitation well layer, a second barrier layer (104), a second well layer (105) that is a transition well layer, and a third barrier layer (106) are provided in that order from the side of a surface that abuts the first electroconductor layer; the first well layer (103) has at least a ground stratum and an excitation stratum; the energy levels of conduction band energy of the first through third barrier layers (102, 104, 106) are higher than that of the excitation stratum, and the thicknesses of these layers are such that a tunneling current flows through; the second well layer (105) has two or more strata An (where n are integers starting from 1); the stratum A1 abuts a first surface where the second barrier layer (104) is disposed and is roughly equal to the excitation stratum; and the other strata abut a second surface where the third barrier layer (106) is disposed.

The invention discloses a double junction transistor photoelectric detector, and relates to the technical field of photoelectric conversion. The photoelectric detector comprises a substrate layer, a second N-type semiconductor layer, a first N-type semiconductor layer and a P-type semiconductor layer which are sequentially arranged from bottom to top, a first electrode layer and a second electrode layer are arranged on the two sides of the second N-type semiconductor layer, and the valence band energy of the P-type semiconductor layer, the valence band energy of the first N-type semiconductor layer and the valence band energy of the second N-type semiconductor layer are gradually increased layer by layer. The conduction band energy of the first N-type semiconductor layer is set to be higher than that of the P-type semiconductor layer and that of the second N-type semiconductor layer, and the doping concentration of the first N-type semiconductor layer and the doping concentration of the second N-type semiconductor layer are smaller than that of the P-type semiconductor layer, so that the P-type semiconductor layer and the first N-type semiconductor layer form a first self-built electric field; the first N-type semiconductor layer and the second N-type semiconductor layer form a second self-built electric field. According to the double-junction transistor photoelectric detector, the responsivity, the response speed and the specific detection rate can be improved at the same time.

The invention provides a photoresponse HEMT device and a preparation method thereof, and the method comprises the steps: forming a P-type doped h-BN array on a barrier layer, forming a p-hBN / n-AlGaN heterojunction, enabling a conduction band below a p-hBN layer to be lifted through a built-in electric field generated by the p-hBN / n-AlGaN heterojunction under a dark condition, enabling a 2DEG quantum well formed at an AlGaN / GaN heterojunction interface through polarization induction to disappear, and enabling the conduction band to be higher than the conduction band at the lower part of the p-hBN layer; a part of conducting channels of the device are turned off, so that low dark current is realized; under the irradiation of ultraviolet light, a built-in electric field near a heterojunction interface separates photo-generated electron-hole pairs, photo-generated holes are gathered on a p-hBN / n-AlGaN interface, photo-generated electrons are induced to an n-AlGaN / n-GaN interface, the built-in electric field is gradually weakened in the process, finally, 2DEG is recovered, conducting channels of the device are all conducted, high light current is achieved, and the performance of the device is improved. Therefore, the optical response capability of the device is realized.

The application provides a semiconductor laser and a preparation method thereof. The semiconductor laser comprises, which are sequentially stacked in a first direction, a lower confinement layer, a lower waveguide layer, an electron energy relaxation structure, an active layer, an upper waveguide layer and an upper confinement layer. The electron energy relaxation structure comprises, which are sequentially stacked in the first direction, a first barrier layer, an electron energy relaxation layer and a second barrier layer. The second barrier layer is located between the electron energy relaxation layer and the active layer. The energy level of the conduction band bottom of the first barrier layer and the energy level of the conduction band bottom of the second barrier layer are higher than the energy level of the conduction band bottom of the electron energy relaxation layer respectively.