158 results about "Conduction band" patented technology

The invention, which relates to the technical field of the semiconductor laser chip, discloses a wide-temperature working high-power DFB semiconductor laser chip comprising a P-InGaAsP lower waveguide layer, an InGaAsP strain multiple quantum channel, an N-InGaAsP upper waveguide layer, an InAlAs-InP superlattice barrier layer, an N-InP spacing layer 1, an N-InGaAsP corrosion stop layer, an N-InP spacing layer 2, an N-InGaAsP grating layer, and an N-InP grating cover layer. According to the wide-temperature working high-power DFB semiconductor laser chip, a laser material structure is epitaxially grown on a P-InP substrate; a P-InP substrate is adopted, so that large-area back ohmic contact effectively reduces P-type series resistance of a device, and the problem of high heating of a traditional high-power laser is effectively solved; then, an InGaAsP strain compensation quantum well is adopted as a gain region, and wide-temperature single-mode work is realized by utilizing the advantage that an InGaAsP gain spectrum is insensitive to temperature; and the InAlAs-InP two-dimensional superlattice barrier structure is adopted to realize transverse and lateral limitation of carriers, so that the limiting efficiency of the carriers in a gain region is effectively improved, and the problem of low energy band difference of an InGaAsP conduction band is effectively solved.

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc / (Dc+Dv) is 65% or more.

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.

Photocatalytic sterilization technology is a technology that uses active substances generated by specific materials under light conditions to kill bacteria, viruses and other microorganisms. This technology mainly relies on the performance of photocatalytic materials, especially semiconductor materials such as titanium dioxide (TiO2). When the photocatalyst is irradiated by light of a specific wavelength, the electrons in the material transition from the valence band to the conduction band, forming electron-hole pairs. These electrons and holes have high chemical activity and can react with water or oxygen to generate free radicals with strong oxidizing ability, which can destroy the cell wall or cell membrane of microorganisms, causing the leakage of intracellular substances, thereby achieving the effect of sterilization. The present application aims to solve the problems of low light utilization rate and insufficient active sites of TiO2 photocatalytic materials, and proposes a TiO2@Ag / Ti-MOF functional material. The TiO2@Ag / Ti-MOF functional material is based on the Ti-MOF skeleton to construct Ag-MOF, realizing the controlled slow release of Ag ions and having a long-term effective sterilization effect.

This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.

The invention discloses a fine simulation method of a CdTe-based II-VI group compound thin film solar cell and a cell structure designed based on the method. According to the method, a physical model of a CdTe-based battery is established through numerical simulation, then the energy band structure of a carrier transport layer is systematically optimized, and the quantitative criteria that a hole transport layer needs to meet the requirements that the Fermi energy level is lower than that of an absorption layer and the hole transport layer has enough positive conduction band offset and an electron transport layer needs to have a wide band gap and moderate positive conduction band offset are determined. And for the optical layer, the optimal thickness of the antireflection layer is determined, the enhancement effect of the optical path gain of the textured structure on optical absorption is quantified, and the maximization of the light capture efficiency is realized. According to the method, through electrical-optical coupling simulation, the CdTe-based solar cell structure of which the conversion efficiency is remarkably improved can be accurately predicted and guided to be designed, the defects that a traditional experiment is high in trial and error cost and long in period are effectively overcome, and a reliable theoretical design and optimization tool is provided for research and development of a high-efficiency and low-cost CdTe-based solar cell.

A semiconductor device includes a substrate, a gate stack structure, and a channel structure. The gate stack structure includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The channel structure at least partially penetrates the gate stack structure and extends in one direction. The channel structure includes: a channel layer coupled to the substrate; a ferroelectric layer at least partially surrounding the channel layer and including a ferroelectric material; and a charge-bound layer at least partially surrounding the ferroelectric material and including an insulating material. At least one of a conduction band level or a valence band level of the insulating material is disposed between a conduction band level and a valence band level of the ferroelectric material.

The application belongs to the technical field of sensors, and discloses an ammonia gas-sensitive sensor and a preparation method thereof. The ammonia gas-sensitive sensor comprises an insulating substrate and an interdigital electrode, wherein: the interdigital electrode is arranged on the insulating substrate, and the surfaces of the interdigital electrode and the insulating substrate are both coated with a gas-sensitive coating; the raw material for preparing the gas-sensitive coating comprises a gas-sensitive material, and the chemical general formula of the gas-sensitive material is: Ba 1‑x Y x TiO3, wherein 0.002<=x<=0.01. The application introduces specific rare earth ions Y 3+ into the A-site of the BaTiO3 lattice for donor doping, utilizes Y 3+ to replace Ba 2+ , and generates a donor doping effect, which increases the free electron concentration in the conduction band of the material, not only significantly improves the initial conductivity of the material in the air, and provides an excellent signal base for resistance change, but also optimizes the concentration and activity of the surface adsorbed oxygen of the material, and realizes high-sensitivity and selectivity detection of ammonia gas.

A method for adjusting the wide spectrum detection of transition metal chalcogenides by using vacancy defects belongs to the field of two-dimensional materials. In the method, transition metal oxides are used as metal sources, two different chalcogen elements are used as sulfur sources, and a single-layer ternary transition metal chalcogen compound with uniform element distribution is grown by using a chemical vapor deposition method. By using the difference in the stability of the chemical bonds between alloy elements, the unstable chemical bonds are broken by hydrogen-assisted annealing, and the generated chalcogen element vacancy defects are uniformly distributed in the ternary transition metal chalcogen compound. The chalcogen element vacancy defects introduce defect energy levels between the conduction band and the valence band of the transition metal chalcogen compound, generate new photoluminescence peaks, and widen the spectrum detection range. The experimental method is simple in process, good in repeatability, can accurately control the type, distribution and number of defects, and is suitable for large-scale production.

A semiconductor structure can comprise a plurality of first semiconductor layers comprising wide bandgap semiconductor layers, a narrow bandgap semiconductor layer, and a chirp layer between the plurality of first semiconductor layers and the narrow bandgap semiconductor layer. The values of overlap integrals between different electron wavefunctions in a conduction band of the chirp layer can be less than 0.1 for intersubband transition energies greater than 1.0 eV, and / or the values of overlaps between electron wavefunctions and barrier centers in a conduction band of the chirp layer can be less than 0.4 nm−1, when the structure is biased at an operating potential. The chirp layer can comprise a short-period superlattice with alternating wide bandgap barrier layers and narrow bandgap well layers, wherein the thickness of the barrier layers, or the well layers, or the thickness of both the barrier and well layers changes throughout the chirp layer.

The application relates to application of Bi2O2Se in a photocatalytic nitrogen fixation reaction and belongs to the technical field of photocatalytic nitrogen reduction. The BOS catalyst with intrinsic weak hole oxidation capacity realizes efficient and stable photocatalytic ammonia synthesis without a sacrificial agent. The BOS has an optimized narrow band gap structure and a unique straddling energy band arrangement, the valence band position is shallow, the hole oxidation capacity is weak, the oxidation degradation of NH4 + Can be effectively inhibited, and the conduction band position is suitable, so that the thermodynamic driving force of nitrogen reduction is ensured. The catalyst has excellent light absorption capacity in a wide spectral range (extending to the near-infrared region), and the apparent quantum efficiency reaches 0.12% at a wavelength of 700 nm. The ammonia synthesis rate of the BOS without a sacrificial agent reaches 61 muM.h ‑1 -1, which is 8.3 times and 2.8 times that of carbon nitride and cadmium sulfide, and the catalyst maintains high activity in an air atmosphere, has excellent oxygen compatibility and cycle stability.

The invention belongs to the technical field of laser, and particularly discloses a high-efficiency laser chip of a direct pumping light-emitting layer and a laser, and the laser chip comprises a substrate layer, an integrated broadband reflector, an integrated active region, a window layer and a protection layer which are sequentially arranged. The integrated broadband integrated active area comprises a plurality of active groups, each active group comprises spacing layers and light-emitting layers, and the spacing layers and the light-emitting layers are alternately arranged; after the light-emitting layer absorbs photon energy of pump light, a carrier at the top of a material valence band of the light-emitting layer is excited to a material sub-energy level of the light-emitting layer and then relaxed to the bottom of a material conduction band of the light-emitting layer, and stimulated radiative transition is generated in the light-emitting layer. According to the invention, the light-emitting layer of the active area can be directly pumped, so that the wavelength of the pumping light source required by the laser chip is close to the laser wavelength, thereby greatly improving the light-light conversion efficiency of the chip, reducing the quantum loss in the laser generation process, reducing the waste heat in the laser chip, relieving the heat effect of the laser, and improving the production efficiency of the laser chip. The output power of the laser is improved.

The invention relates to a quantum dot electroluminescent device which comprises a quantum dot luminescent layer, an electronic function layer and an adjusting layer located between the quantum dot luminescent layer and the electronic function layer, and the quantum dot luminescent layer comprises a blue light luminescent layer. The conduction band energy level of the adjusting layer is located between the conduction band energy level of the electronic function layer and the conduction band energy level of the blue light emitting layer. According to the quantum dot electroluminescent device adopting the technical scheme, the conduction band energy level of the adjusting layer is located between the conduction band energy level of the electronic function layer and the conduction band energy level of the blue light emitting layer, the adjusting layer can serve as an injection step to facilitate electron injection for blue light, and the adjusting layer can serve as an electron blocking material for red light and green light to facilitate electron injection. And electron injection is reduced. Therefore, the adjusting layer can enhance the electron supply of the blue light device and weaken the electron mobility of the red light device, thereby improving the carrier balance of the red, green and blue light devices, improving the display effect and being beneficial to wide application.

The application discloses a stripline broadband two-dimensional hybrid network and a multifunctional hybrid network, the two-dimensional hybrid network comprising, from top to bottom, an upper dielectric plate, an upper half-cured sheet, an intermediate dielectric plate, a lower half-cured sheet and a lower dielectric plate, and further comprising metallized through holes penetrating through the whole two-dimensional hybrid network, characterized in that the upper surface of the upper dielectric plate is covered by an upper anti-interference layer, the lower surface of the lower dielectric plate is covered by a lower anti-interference layer, and the metallized through holes penetrate through the upper anti-interference layer and the lower anti-interference layer; the upper and lower surfaces of the intermediate dielectric plate are both provided with a conducting band, the conducting band and the edge overlapping part of the intermediate dielectric plate form a port, the conducting band parts overlap, and the overlapping area forms four constant offset couplers, and the four constant offset couplers are cascaded to form the stripline broadband two-dimensional hybrid network. The application provides a stripline broadband two-dimensional hybrid network and a multifunctional hybrid network with high integration, wide bandwidth and easy integration with an antenna and a radio frequency circuit.

The application discloses an epitaxial structure and method of a high-linearity AlGaN / GaN heterojunction, which sequentially comprises a single-crystal substrate, an AlN nucleation layer, a GaN buffer layer, a GaN channel layer, an AlGaN channel layer, a first AlGaN barrier layer and a second AlGaN barrier layer. The technical scheme uses epitaxial technologies such as metal organic chemical vapor deposition (MOCVD), adopts a high-temperature and low-rate process for the GaN channel layer, improves the crystallization quality and surface morphology of the GaN channel layer, and is favorable for reducing the defect density of the subsequent AlGaN channel layer and barrier layer. The AlGaN channel layer structure is introduced, the small conduction band step of the AlGaN channel layer / GaN channel layer is used, three-dimensional distribution of an electron gas in the GaN / AlGaN composite channel layer is realized, the first AlGaN barrier layer structure of polarization modulation doping is introduced, the electron gas penetrates into the barrier layer, and the three-dimensional depth of the electron gas is further widened, the second AlGaN barrier layer with strong polarization is used, the electron gas surface density and the transconductance peak value are improved, and the application is suitable for the development of a high-linearity GaN radio frequency device.

The invention discloses a double junction transistor photoelectric detector, and relates to the technical field of photoelectric conversion. The photoelectric detector comprises a substrate layer, a second N-type semiconductor layer, a first N-type semiconductor layer and a P-type semiconductor layer which are sequentially arranged from bottom to top, a first electrode layer and a second electrode layer are arranged on the two sides of the second N-type semiconductor layer, and the valence band energy of the P-type semiconductor layer, the valence band energy of the first N-type semiconductor layer and the valence band energy of the second N-type semiconductor layer are gradually increased layer by layer. The conduction band energy of the first N-type semiconductor layer is set to be higher than that of the P-type semiconductor layer and that of the second N-type semiconductor layer, and the doping concentration of the first N-type semiconductor layer and the doping concentration of the second N-type semiconductor layer are smaller than that of the P-type semiconductor layer, so that the P-type semiconductor layer and the first N-type semiconductor layer form a first self-built electric field; the first N-type semiconductor layer and the second N-type semiconductor layer form a second self-built electric field. According to the double-junction transistor photoelectric detector, the responsivity, the response speed and the specific detection rate can be improved at the same time.

The invention provides a photoresponse HEMT device and a preparation method thereof, and the method comprises the steps: forming a P-type doped h-BN array on a barrier layer, forming a p-hBN / n-AlGaN heterojunction, enabling a conduction band below a p-hBN layer to be lifted through a built-in electric field generated by the p-hBN / n-AlGaN heterojunction under a dark condition, enabling a 2DEG quantum well formed at an AlGaN / GaN heterojunction interface through polarization induction to disappear, and enabling the conduction band to be higher than the conduction band at the lower part of the p-hBN layer; a part of conducting channels of the device are turned off, so that low dark current is realized; under the irradiation of ultraviolet light, a built-in electric field near a heterojunction interface separates photo-generated electron-hole pairs, photo-generated holes are gathered on a p-hBN / n-AlGaN interface, photo-generated electrons are induced to an n-AlGaN / n-GaN interface, the built-in electric field is gradually weakened in the process, finally, 2DEG is recovered, conducting channels of the device are all conducted, high light current is achieved, and the performance of the device is improved. Therefore, the optical response capability of the device is realized.

The application provides a semiconductor laser and a preparation method thereof. The semiconductor laser comprises, which are sequentially stacked in a first direction, a lower confinement layer, a lower waveguide layer, an electron energy relaxation structure, an active layer, an upper waveguide layer and an upper confinement layer. The electron energy relaxation structure comprises, which are sequentially stacked in the first direction, a first barrier layer, an electron energy relaxation layer and a second barrier layer. The second barrier layer is located between the electron energy relaxation layer and the active layer. The energy level of the conduction band bottom of the first barrier layer and the energy level of the conduction band bottom of the second barrier layer are higher than the energy level of the conduction band bottom of the electron energy relaxation layer respectively.

The invention provides a high-efficiency X-ray imager containing a built-in transmission line and a preparation method of the high-efficiency X-ray imager. A conductive strip is arranged on the input surface of a lower micro-channel plate, conductive strips are arranged on the input surface and the output surface of an upper micro-channel plate, and the output surface of the upper micro-channel plate is oppositely attached to the input surface of the lower micro-channel plate; the conduction band strip units on the two faces are in one-to-one correspondence, and the micro-channels of the two micro-channel plates are in butt joint to form the micro-channel plate assembly. According to the micro-channel plate assembly, the two groups of micro-channels are in butt joint with each other, the gain is improved, detection of weak electronic signals is met, meanwhile, the design of the conductive strips and the built-in transmission lines formed by the conductive strips is combined, multi-mode polaritons are excited under the single frequency, and the requirement for parallel processing of multi-dimensional information is met.

The embodiment of the utility model provides a deep trench isolation structure. The deep trench isolation structure comprises a deep trench isolation core extending into a substrate, a first film surrounding the deep trench isolation core, a second film located between the first film and the deep trench isolation core, and a third film located between the second film and the deep trench isolation core, the first film has a first conduction band at a first band energy, the second film has a second conduction band at a second band energy less than the first band energy, and the third film has a third conduction band at a third band energy greater than the second band energy. The deep trench isolation structure isolates different semiconductor devices from each other, thereby reducing the amount of dark current and parasitic capacitance occurring between the semiconductor devices.

A high-current drift transistor (HSDT) with low losses is to be realized by having electrons with energies E <EF-kBT (EF=Fermi-Energie, kB=Boltzmann-Konstante, T=Temperatur) eines völlig gefüllten Leitungsbands eines zweidimensionalen Elektronengases (2DEG) der Dimensionen Lx·Ly in der x-y-Ebene einem Magnetfeld Bz und elektrischen Feldern Ex und Ey ausgesetzt werden, was sie alle auf eine Driftgeschwindigkeit vD in der x-y-Ebene zwingen soll. Der resultierende elektrische Driftstrom kann sehr groß werden, da er widerstandlos ist, denn die beteiligten Elektronen können nicht durch Streuung an Fehlstellen, Verunreinigungen oder Phononen gestört werden, da alle möglichen Endzustände dieser Prozesse durch andere Elektronen besetzt sind. Damit kann der HSDT sehr große elektrische Leistungen im kW-Bereich steuern.

The invention discloses an alternating current loss testing device and method for a superconducting material, the superconducting material comprises a baseband buffer layer, a first superconducting layer and a second superconducting layer, and the first superconducting layer and the second superconducting layer are located at two opposite sides of the baseband buffer layer. The alternating current loss testing device of the superconducting material comprises a first current conduction band, a second current conduction band, a connection conductive structure signal detection device and an alternating current power supply module, the first current conduction band is electrically connected with the first end of the first superconducting layer, the second current conduction band is electrically connected with the first end of the second superconducting layer, and the second end of the first superconducting layer is electrically connected with the second end of the second superconducting layer through a connecting conductive structure; the first current conduction band receives an L-phase power supply signal of an alternating current power supply signal, and the second current conduction band receives an N-phase power supply signal of the alternating current power supply signal; the signal detection device is configured to obtain the detection current and the detection voltage of the superconducting material and obtain the alternating current loss of the superconducting material according to the detection current and the detection voltage.

A capacitor comprises a stack of layers made of a semiconductor material having a band gap energy greater than 2.3 eV, the stack of layers comprising: an electrically insulating intermediate layer having a resistivity greater than 10 kohm·cm and comprising n- or p-type deep dopants producing energy levels more than 0.4 eV from the conduction band or the valence band of the semiconductor material, two contact layers having a resistivity less than or equal to 10 kohm·cm and comprising dopants of a type opposite to that of the deep dopants of the intermediate layer, the two contact layers being arranged on either side of the intermediate layer to form two pn junctions.

The invention provides a solar cell and a manufacturing method thereof. The solar cell comprises a substrate; the epitaxial structure is arranged on the surface of one side of the substrate; the ohmic contact layer is arranged on the surface, deviating from the substrate, of the epitaxial structure; the grid line electrode is in contact with the ohmic contact layer; the back electrode is arranged on the surface of one side, deviating from the epitaxial structure, of the substrate; wherein the ohmic contact layer comprises a composite stacked structure formed by a phosphide layer and an arsenide layer. Through the arrangement, the conduction band bottom of the phosphide layer is higher than the arsenide layer, and an electron barrier (delta Ec) is formed at the interface of the phosphide layer and the arsenide layer; heavy doping is carried out on the ohmic contact layer, so that a Schottky barrier between the grid line electrode and the phosphide layer and a heterojunction barrier (delta Ec) between the phosphide layer and the arsenide layer become thin barriers capable of being tunneled by electrons due to narrowing of a depletion region, and overall low-resistance ohmic contact is achieved.

The invention relates to a filtering matching integrated amplifying circuit for harmonic suppression. The filtering matching integrated amplifying circuit comprises a power device, an input matching circuit, an output filtering matching circuit and a radio frequency output port, the power device is respectively connected with the input matching circuit and the output filtering matching circuit; the output filter matching circuit comprises a filter matching integrated substrate, and a filter matching circuit, a direct current power supply circuit and a second high Q filter capacitor which are mounted on the filter matching integrated substrate; the filtering matching integrated substrate comprises two layers of media, three layers of conduction bands and two groups of metalized through holes; the two layers of media are respectively positioned among the three layers of conduction bands; and the two groups of metalized through holes penetrate through the two layers of media to connect the three layers of conduction bands. Through the integrated design of the power device matching circuit and the filter circuit, the circuit loss is reduced, the circuit size is reduced, harmonic waves can be effectively suppressed, and the maximum power transmission requirement is met.

The invention discloses an anionic chalcopyrite high-entropy catalytic material and a preparation method thereof, and belongs to the technical field of photoelectric catalytic materials. The chemical general formula of the anionic chalcopyrite high-entropy catalytic material is CuGaX2; wherein X is a non-metal anion. And the non-metal anions comprise at least five different elements of B, C, N, O, S, Se, Te, F, Cl and Br. The multi-element anions are cooperatively bonded with a Cu / Ga metal center and participate in construction of a conduction band and a valence band, so that the separation efficiency of photon-generated carriers is optimized; lattice distortion is induced by the high-entropy effect to form high-density active sites; uniform dispersion of atomic-scale elements is realized through one-step solid-phase synthesis. The obtained material shows high catalytic activity and stability under simulated sunlight, and is suitable for the application fields of hydrogen production by solar photolysis of water, CO2 reduction and the like; meanwhile, the material elements are uniformly dispersed in the atomic scale, the product purity is high, the process is simple and convenient, the period is short, the cost is low, and the large-scale production potential is achieved.

The invention provides a light-emitting diode, a light-emitting device and a light-emitting device. According to the invention, the P-type doped first ohmic contact layer is formed on one side of the N-type semiconductor layer, and the first electrode formed by the transparent conductive material is formed above the first ohmic contact layer. The first electrode and the P-type first ohmic contact layer can form forward current conduction from the first ohmic contact layer to the first electrode, and on the other hand, a strong built-in electric field is formed between the heavily-doped P-type first ohmic contact layer and the N-type semiconductor layer, so that the valence band top electron energy level of the P side is higher than the conduction band bottom electron energy level of the N side; therefore, a forward tunneling current from the N-type semiconductor layer to the P-type first ohmic contact layer can be generated under the action of an external electric field, so that the light-emitting diode has good electrical performance; a metal material layer is not formed between the first electrode and the first ohmic contact layer any more, so that light absorption and shielding are reduced, and the light emitting effect of the light emitting diode is improved.

The invention provides a fingernail integrated system for monitoring cardiovascular health of a human body, which is characterized in that firstly, a photoelectric detector device performs matching between energy bands to construct a built-in electric field through different energy band structures of materials, when light irradiates a light active layer, electron absorption energy jumps to a conduction band to generate electron-hole pairs, and the energy of the conduction band of an electron transport layer is relatively low, so that the electron-hole pairs are generated; electrons flow to the electron transport layer and are conducted away by the electrode, and holes left in a valence band flow to the hole transport layer and are conducted away by the electrode, so that the device can generate current under the condition of not applying voltage, which indicates that the photoelectric detector can operate under the condition of low power consumption; meanwhile, due to the vertical structure and the self-powered characteristic of the photoelectric detector, the area of the device can be greatly reduced, a patterned electrode can be designed, the size of the electrode can be freely adjusted, and therefore personalized and miniaturized electrode preparation is achieved.

The invention discloses a preparation method of a CsPbX3 quantum dot composite enhanced photo-thermal anti-icing / deicing super-hydrophobic coating, and belongs to the field of anti-icing coating preparation. The invention aims to solve the problems of low photo-thermal efficiency, poor wear resistance and complex preparation process of the traditional anti-icing material. The method comprises the steps of 1, pretreatment; 2, preparing a CsPbX3 quantum dot composite enhanced photo-thermal anti-icing / deicing super-hydrophobic coating solution; and 3, coating and curing. According to the invention, the huge specific surface area of ZnSn (OH) 6 is utilized, so that the ZnSn (OH) 6 and a matrix generate strong physical adsorption and interface interaction, external stress is effectively transferred and dispersed, and crack propagation caused by stress concentration is avoided; when the CsPbX3 quantum dot is used as a photo-thermal factor and is illuminated, valence band electrons can absorb energy and jump to a conduction band, and electron-hole pairs are formed; the electron-hole pairs can transfer energy to lattice vibration, release the energy in the form of heat energy and convert the energy into heat energy, so that the photothermal conversion efficiency is improved.

The invention discloses a wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector and a preparation method thereof, the wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector comprises a substrate base material, a micro-nano conical B-Si structure is etched on the substrate base material, gold nanoparticles are deposited and covered on the surface of the micro-nano conical B-Si structure, the photoelectric detector is a double-four-quadrant photoelectric detector, and the thickness of the double-four-quadrant photoelectric detector is larger than that of the micro-nano conical B-Si structure. And the boundary area of the double four quadrants is electrically isolated by etching deep grooves and filling oxygen-silicon compounds to form isolation grooves. The gold nanoparticles are compounded on the surface of B-Si, hot electrons can be excited through a localized surface plasma resonance mechanism and injected into a black silicon conduction band to participate in the photoelectric conversion process, the band gap limitation of the B-Si material is broken through, wide spectral response is achieved, the response capability in a near-infrared region is improved, and the photoelectric conversion efficiency is improved. And meanwhile, a silicon oxide and silicon nitride passivation film is introduced to the surface of the black silicon and gold nanoparticle composite structure, and a surface carrier recombination process is inhibited by filling dangling bonds and defect states on the surface of the black silicon pointed cone structure, so that the dark current level of the device is reduced.