403 results about "Conduction band" patented technology

A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

The invention provides a quantum anomalous Hall insulator aging number determination method and system based on topological defects, computer equipment, a storage medium and a program product. The method comprises the steps that the topological charge of each topological defect of two belt models is determined; determining the contribution of the corresponding topological charge to the aging number so as to determine the aging number of the valence band or the conduction band; fourier transform is carried out on the Hamiltonian to obtain a tight constraint Hamiltonian in a real space; performing one-dimensional Fourier transform on the tightly bound Hamiltonian in the real space to obtain a one-dimensional effective Hamiltonian; judging whether the number of the energy-gap-free edge states is equal to the absolute value of the conduction band aging number or not; if so, taking the number of the edge states without the energy gap as the aging number of the quantum abnormal Hall insulator; and if not, reconstructing the Hamiltonian of the two-band model and the expression of the component x and the component y of the Hamiltonian with respect to the two-dimensional momentum, and calculating the momentum again. According to the method, a large number of high aging models can be constructed, and the research efficiency is improved.

An electrode structure for a solid-state or semi-solid-state battery is provided in which NCM electrode particles coated with an interphase layer and a nitrogen-containing carbon layer are disposed. [Solution] The NCM electrode particles comprise NCM (nickel-cobalt-manganese oxide) particles (15), primary particles (30) that coat the outer surfaces of the NCM particles, an interphase layer (16) that includes a glass phase layer (241) and a plurality of ceramic particles (242), and a nitrogen-containing carbon layer (35) that coats the exterior of the primary particles. Nitrogen-doped carbon molecules in the nitrogen-containing carbon layer aid in the conduction of electrons and lithium ions, modifying the electrical potential of the NCM particles. The nitrogen-containing carbon layer is formed by coating the surfaces of the primary particles with a nitrogen-containing polymer material and calcining the material in an inert atmosphere. Conjugated bonds are formed between the carbon and nitrogen, modifying the energy band structure, reducing the energy required for electrons to transition to the conduction band, and improving overall electronic conductivity.

The invention provides a positive quantum dot light-emitting diode and a preparation method thereof, and belongs to the technical field of photoelectric materials. The invention provides a positive quantum dot light-emitting diode. The positive quantum dot light-emitting diode comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode from bottom to top, the electron transport layer is a ZnMgO thin film modified by halogen amine salt. According to the invention, the ZnMgO thin film is modified by using the halogen amine salt, so that the conduction band energy level of the ZnMgO electron transport layer can be moved upwards, the interface potential barrier between the electrode and the electron transport layer is increased, excessive electron injection can be blocked, and the carrier injection balance in the device is promoted. Meanwhile, amino cations in the halogen amine salt can passivate a hydroxyl defect state on the surface of ZnMgO, and high-electronegativity halogen ions enter ZnMgO crystal lattices to passivate oxygen vacancy defects, so that interface exciton quenching is reduced, and the radiation recombination efficiency of the device is improved.

The invention provides a method for measuring a wafer to be measured through a four-probe measuring instrument and a four-probe measuring system. The method comprises the steps that the wafer is placed on a testing platform; the probes of the four-probe measuring instrument are in physical contact with the surface of the wafer; irradiating the contact surface of the probe and the wafer by using laser; and applying current to two probes of the four-probe measuring instrument, and measuring the voltage drop between the other two probes. According to the invention, a semiconductor is irradiated by laser, electrons are transited to a conduction band, holes are generated, and electron-hole pairs are formed, so that the contact characteristic is improved, good ohmic contact can be formed between the probe and the surface of a silicon wafer to be measured, and the stability of silicon wafer measurement is improved.

The invention belongs to the technical field of optical communication, and relates to a flexible silicon-based photoelectric device, a receiving end and a visible light communication system. The flexible silicon-based photoelectric device comprises a back electrode layer, a hole transport layer, a P-type silicon light absorption layer, an electron transport layer and a front electrode layer. The valence band side energy difference between the electron transport layer and the P-type silicon light absorption layer is greater than the conduction band side energy difference; the conduction band side energy difference between the P-type silicon light absorption layer and the hole transport layer is greater than the valence band side energy difference; the forbidden bandwidth of the electron transport layer is greater than 3.0 eV. The front electrode layer comprises a plurality of grid electrodes which are separately arranged on the surface of the electron transport layer. According to the scheme provided by the invention, the heterojunction is formed on the surfaces of the two sides of the P-type silicon light absorption layer, so that the intensity of a built-in electric field is effectively enhanced, and the flowing speed of photo-generated electrons and photo-generated holes in the device is accelerated, thereby improving the response speed of the device; and meanwhile, the collection efficiency of electrons and holes is improved, so that the photoelectric conversion efficiency of a photoelectric device is improved.

The invention provides a solar cell module and a preparation method thereof. The composite electron transport layer comprises a light scattering layer used for absorbing first light and forming scattering; the first electron transmission layer is located on the surface of one side of the first light scattering layer and used for transmitting electrons and filling gaps of the light scattering layer; the second electron transport layer is located on the surface of the side, away from the first light scattering layer, of the first electron transport layer; wherein a conduction band price difference exists between the first electron transport layer and the second electron transport layer. In the composite electron transport layer of the solar cell module, the light scattering layer can increase light scattering, the first electron transport layer can fill and level up gaps formed by aggregation of nano-particles in the light scattering layer and reduce surface roughness, and the first electron transport layer and the second electron transport layer with conduction band price difference can accelerate electron transport and improve the electron transport efficiency. The three layers cooperate with each other, so that the electron transmission efficiency and stability of the composite electron transmission layer can be remarkably improved.

The invention relates to the technical field of semiconductor materials, and discloses a Si-doped epsilon-Ga2O3 material with high conductivity and deep ultraviolet light absorption performance and a preparation method, the doping concentration of Si in the Si-doped epsilon-Ga2O3 material is 0.83 at%-2.5 at%, and Si atoms replace tetrahedral coordinated Ga (1) atoms in epsilon-Ga2O3. By accurately controlling the Si doping concentration to be 0.83-2.5 at% and enabling Si atoms to replace tetrahedral coordinated Ga (1) atoms in epsilon-Ga2O3, the electronic structure of the material is effectively improved, the Fermi level moves upwards to enter a conduction band after Si doping, and Si3s orbital electrons occupy the conduction band bottom (CBM), so that the carrier concentration is increased, the effective mass of the electrons is reduced, and the conductivity of the material is remarkably improved; tests show that compared with an intrinsic epsilon-Ga2O3 material, the conductivity of the doped material is improved by 1-3 orders of magnitude, strict requirements of high-power electronic components and the like on the conductivity of the material are met, heat loss of the electronic components due to resistance is reduced, and the working efficiency and stability of the components are improved.

The invention, which relates to the technical field of the semiconductor laser chip, discloses a wide-temperature working high-power DFB semiconductor laser chip comprising a P-InGaAsP lower waveguide layer, an InGaAsP strain multiple quantum channel, an N-InGaAsP upper waveguide layer, an InAlAs-InP superlattice barrier layer, an N-InP spacing layer 1, an N-InGaAsP corrosion stop layer, an N-InP spacing layer 2, an N-InGaAsP grating layer, and an N-InP grating cover layer. According to the wide-temperature working high-power DFB semiconductor laser chip, a laser material structure is epitaxially grown on a P-InP substrate; a P-InP substrate is adopted, so that large-area back ohmic contact effectively reduces P-type series resistance of a device, and the problem of high heating of a traditional high-power laser is effectively solved; then, an InGaAsP strain compensation quantum well is adopted as a gain region, and wide-temperature single-mode work is realized by utilizing the advantage that an InGaAsP gain spectrum is insensitive to temperature; and the InAlAs-InP two-dimensional superlattice barrier structure is adopted to realize transverse and lateral limitation of carriers, so that the limiting efficiency of the carriers in a gain region is effectively improved, and the problem of low energy band difference of an InGaAsP conduction band is effectively solved.

The invention discloses a quantum correction method for drift diffusion transportation of a gallium nitride power device in advanced packaging and a three-dimensional integrated module electrothermal coupling simulation method. According to the method, a one-dimensional stationary Schrodinger equation and a two-dimensional Poisson equation are solved in a self-consistent mode, sub-band energy levels, corresponding wave functions and potential distribution in the quantum confinement direction are obtained, and the convergence of a self-consistent algorithm is improved by modifying the Poisson equation; quantum correction of the drift diffusion equation is realized by correcting the conduction band; starting from a quantum confinement effect and a drift diffusion transport theory, the quantum effect of two-dimensional electron gas in a triangular potential well formed by a gallium nitride polarization effect and a quantum correction method of a drift diffusion transport model are researched, and the steady-state operating characteristics of an advanced packaging power device containing the quantum effect are evaluated. And an electrothermal coupling simulation method of the device and the three-dimensional integrated module is further researched, the thermal management capability of the three-dimensional integrated module is evaluated, and the method has important application value.

The broadband coaxial-to-microstrip line converter comprises a coaxial line, a gold strip and a substrate, the coaxial line comprises a coaxial outer conductor, a central medium and a coaxial inner conductor which are arranged from outside to inside, the coaxial inner conductor at one end of the coaxial line is shorter than the coaxial outer conductor, and a containing space for installing the gold strip and the substrate is formed. The substrate comprises a top-layer conduction band, a middle insulating layer and a bottom-layer conduction band, the top-layer conduction band comprises a top-layer gradual change area and a microstrip line which are located on the same center line with the coaxial inner conductor, and the bottom-layer conduction band is provided with a gradual change hollow area right below the top-layer gradual change area to jointly form a mode gradual change area. According to the utility model, the structure is exquisite, a TEM mode transmitted in a coaxial line can be smoothly transited to a quasi TEM mode transmitted by a microstrip line, the working bandwidth of the whole conversion circuit is effectively improved, the working frequency can reach up to 50GHz, and the return loss of each frequency point is less than-15dB.

The invention relates to a multi-absorption-band ultra-wideband common-mode filter based on a mixed resonator structure. The multi-absorption-band ultra-wideband common-mode filter comprises a coupling microstrip line, a dielectric substrate, a main resonator, an auxiliary resonator and a resistor, the filter has an upper surface and a lower surface, and a coupling microstrip line comprises a metal conduction band located on a dielectric substrate and a metal ground layer located below the dielectric substrate; two ends of the coupling microstrip line are respectively connected with the input port and the output port; the main resonator is etched in the middle of the metal ground layer; the auxiliary resonator is etched on the outer side of the main resonator in the metal ground layer; the coupling microstrip line is mutually coupled with the main resonator and the auxiliary resonator to realize mixed resonance; the resistor crosses the gap of the auxiliary resonator at the intersection of the auxiliary resonator and the symmetric line, and the two ends of the resistor are connected with the metal ground layers inside and outside the metal conduction band; according to the invention, the ultra-wideband common-mode suppression bandwidth and a plurality of absorption bands are provided, and the absorption bands dissipate common-mode noise in the form of heat energy, so that the problem of potential common-mode electromagnetic interference in the system is reduced, and normal transmission of differential-mode signals is not damaged at the same time.

The invention provides an epitaxial structure of a semiconductor laser and a preparation method thereof. The epitaxial structure comprises a first waveguide layer, a first barrier layer, a first barrier layer, a quantum well layer, a second barrier layer, a second barrier layer and a second waveguide layer which are stacked from bottom to top. By adjusting different contents of an aluminum element and a gallium element in the first waveguide layer, the first barrier layer, the second barrier layer and the second waveguide layer, adjusting different contents of a gallium element and an indium element in the first barrier layer, and adjusting different contents of an aluminum element, a gallium element and an indium element in the second barrier layer, a first conduction band difference delta Ec11 is greater than 70meV, a second valence band difference delta Ev21 is greater than 240meV, and a second valence band difference delta Ev21 is greater than 240meV. The first valence band difference delta Ev11 and the second conduction band difference delta Ec21 are both smaller than or equal to 0 meV. The epitaxial structure can well balance the limiting effect on electrons and holes, so that the limiting capability of the epitaxial structure on current carriers is optimal, and the output efficiency of the device is improved.

The invention discloses an artificial surface plasmon microstrip transmission line with a crosstalk suppression effect. The transmission line conduction band is provided with a periodic internal notch groove structure which is used for transmitting microwave artificial surface plasmons with strong local field constraint performance. The periodic notch grooves can be S-shaped, spiral, T-shaped, cross-shaped, KoCh-shaped, Moore Curve-shaped and other forms and are distributed in the microstrip conduction band, and the width of the conduction band is not increased, so that the remarkable inhibition effect that the far-end crosstalk is lower than-30dB is realized on the premise that the size of the microstrip line is not changed. The microstrip transmission line has the low-pass characteristic, the frequency response falling edge is steep, the cut-off frequency can be flexibly adjusted by adjusting the notch groove width and the number of iterations, and application requirements of different frequency bands can be met by scaling. The structure is simple, the size is compact, inter-line crosstalk can be effectively suppressed, the signal transmission quality is improved, the strict signal integrity requirement is met, and the high-frequency and high-speed signal transmission and functional devices are widely applied, and the wide application prospect is achieved.

An example Geiger mode avalanche photodiode includes a first semiconductor alloy forming a compositionally graded gain region configured to form a conduction band having free electrons, a valence band having free holes, and a bandgap between the valence band and the conduction band that varies in size across the graded gain region; a second semiconductor alloy forming an absorber region; and a semiconductor substrate.

A photocatalytic sterilization technology is a technology for killing microorganisms such as bacteria, viruses and the like by utilizing active substances generated by a specific material under an illumination condition. The technology mainly depends on the performance of photocatalytic materials, especially semiconductor materials such as titanium dioxide (TiO2). When the photocatalyst is irradiated by light with a specific wavelength, electrons in the material are transited from a valence band to a conduction band to form electron-hole pairs. The electrons and holes have very high chemical activity, can react with water or oxygen to generate free radicals with strong oxidizing capacity, and can destroy cell walls or cell membranes of microorganisms to cause leakage of substances in cells, so that the sterilization effect is achieved. The invention provides a TiO2 (at) Ag / Ti-MOF functional material aiming at the problems of low light utilization rate and insufficient reaction active sites of a TiO2 photocatalytic material. According to the TiO2 (at) Ag / Ti-MOF functional material, Ag-MOF is constructed on the basis of a Ti-MOF framework, controllable slow release of Ag ions is achieved, and the long-time effective sterilization effect is achieved.

Provided is a sensor device having high measurement sensitivity for measuring an external electric field. The sensor device can measure the electric field intensity of the external electric field. The sensor device includes: a first dielectric layer; a channel layer disposed directly on the first dielectric layer, having a channel region, having an atomic layer material film of one or more atomic layers formed of a two-dimensional transition metal disulfide; and a first electrode and a second electrode which are in electrical contact with the channel layer and are disposed so as to face each other with the channel region therebetween, the channel layer having a first surface and a second surface, the first surface being disposed on the first dielectric layer, the second surface being exposed to the outside, or the second dielectric layer being disposed on the second surface. A Fermi level of the channel layer is in a conduction band or valence band of the channel layer and in a trap level band in the first dielectric layer that interfaces with the channel layer.

The invention relates to the technical field of semiconductor materials and devices, and provides a superlattice infrared detector which comprises a substrate and an epitaxial structure growing on the substrate, the epitaxial structure comprises a superlattice absorption layer, the superlattice absorption layer is provided with multiple stages of A / B superlattice material layers which are sequentially grown in a laminated mode, and the A / B superlattice material layers are arranged on the substrate. Each stage of A / B superlattice material layer is provided with a plurality of layers of A materials and a plurality of layers of B materials which are periodically and alternately grown in a laminated mode, and in the multiple stages of A / B superlattice material layers, the number of atomic layers of the single layer of A material in each stage of A / B superlattice material layer is increased in a stepped mode compared with the number of atomic layers of the single layer of A material in the previous stage of A / B superlattice material layer. The conduction band of each stage of A / B superlattice material layer descends in a stepped manner, and the valence band of each stage of A / B superlattice material layer is kept unchanged. The limitation of short diffusion length can be reduced, the thickness of the absorption region can be effectively increased, the quantum efficiency of the device is improved, and the detection performance of the device is improved.

The utility model discloses a quantum dot light emitting diode, a display substrate and a display device. The quantum dot light-emitting diode comprises a first electrode, a second electrode, and a quantum dot light-emitting layer, a first electron transport layer and a second electron transport layer which are arranged between the first electrode and the second electrode, wherein the first electron transport layer and the second electron transport layer are sequentially arranged on one side, close to the second electrode, of the quantum dot light-emitting layer; wherein the first electron transport layer and the second electron transport layer are made of inorganic nanoparticles, the conduction band bottom energy level of the first electron transport layer is matched with the conduction band bottom energy level of the quantum dot light-emitting layer, and the conduction band bottom energy level of the second electron transport layer is larger than the work function of the second electrode and smaller than the conduction band bottom energy level of the first electron transport layer; the carrier mobility of the second electron transport layer is greater than that of the first electron transport layer, and the second electron transport layer is configured to adjust the length of the optical microcavity between the first electrode and the second electrode.

The invention discloses a novel monolithic integrated lead sulfide detector and a preparation method thereof. The novel monolithic integrated lead sulfide detector sequentially comprises a bottom electrode layer, a hole transport layer, a P-type layer, an N-type layer, an electron transport layer and a top electrode layer, the P-type layer is used for absorbing photons, so that electrons in the P-type layer are transited to a conduction band, and holes are reserved in a valence band; the N-type layer is used for transmitting electrons, transmitting the electrons generated by the P-type layer to a conduction band of the N-type layer and enabling holes to stay in the P-type layer, and the electrons and the holes are separated in space; wherein the P-type layer comprises PbS (lead sulfide); and the N type layer comprises CdSe. According to the embodiment of the invention, the N-type layer of cadmium selenide and the P-type layer of PbS are utilized to construct a heterogeneous p-n junction, so that the monolithic integrated lead sulfide detector has a time constant of less than 1 microsecond, high-frame-rate work can be allowed, and rapid change of an object can be tracked.

The invention relates to a method for producing an NV centre in diamond (220), comprising the steps of: a) providing a diamond (220) having a surface (260); b) defining an implantation region (240) in the surface (260) of the diamond (220); c) N-doping the implantation region (240) of the diamonds (220) in order to raise the Fermi level in the implantation region (240) of the diamond (220) to a value of approximately -0.5 eV from the conduction band edge in the band gap of the diamond material of the diamond (220); d) defining an implantation position (230) in the surface (260) of the diamond (220); e) carrying out a second implantation of a nitrogen isotope by means of focused single-ion implantation with an implantation energy of 9.5 keV into the implantation region (240) of the diamond at the implantation position (230); f) heat treating the diamond (220) at more than 800°C. The method has the advantage whereby, in this way, deterministic NV centres can be produced at predetermined positions (230) in the surface (260) of a diamond (220).

The invention relates to the technical field of semiconductor detection, and provides a four-probe measuring instrument, a four-probe measuring system and a method for measuring a wafer to be measured by the four-probe measuring instrument, and the four-probe measuring instrument comprises four probes which are provided with channels penetrating up and down; laser emitted by the laser emitter passes through the channel from top to bottom and irradiates the wafer to be detected; the fixing plate is provided with a hole opposite to the probe, the probe penetrates through the hole, and the fixing plate is used for fixing the probe and preventing laser outside the probe from irradiating a wafer to be detected. According to the invention, a semiconductor is irradiated by laser, electrons are transited to a conduction band, holes are generated, and electron-hole pairs are formed, so that the contact characteristic is improved, good ohmic contact can be formed between the probe and the surface of a silicon wafer to be measured, and the stability of silicon wafer measurement is improved.

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc / (Dc+Dv) is 65% or more.

The invention discloses a biplane tapered slot antenna, and belongs to the technical field of antennas. The antenna comprises a dielectric substrate, a metal radiation patch, a metal conduction band and a resistor. The radiation patch is arranged in a double-plane manner, so that the different-plane tapered slot line is constructed, and the impedance matching of the antenna is improved while the power capacity is improved. The metal radiation patch comprises an upper radiation patch and a lower radiation patch, the metal conduction band and the lower radiation patch form a microstrip line, and the resistor, the upper radiation patch and the lower radiation patch are connected in series into a whole, so that the effective suppression of the reflection voltage of the antenna is realized; therefore, resistance loading does not affect the radiation efficiency of the antenna. Technical index parameters such as power capacity, reflection voltage and radiation efficiency are considered at the same time, a technical scheme with excellent comprehensive performance is provided for ultra-wideband microwave pulse radiation, and the ultra-wideband microwave pulse radiation model can be used as an antenna basic model.

The invention belongs to the technical field of corrosion inhibition of ocean engineering structure metal materials, and particularly relates to an anti-corrosion, anti-fouling and antibacterial multifunctional Z-type heterojunction photo-anode and a preparation method thereof. The photoanode is of a Z-type heterojunction structure, and selective recombination of electron-hole pairs can be achieved, so that electrons with higher reducing capacity are reserved on a conduction band of one semiconductor, and holes with higher oxidizing capacity are reserved on a valence band of the other semiconductor. Photoelectrons are effectively injected into protected metal to realize photoelectric cathode protection; meanwhile, strong oxidizing holes and generated active oxygen species (such as. OH) can efficiently degrade organic matters and biological membranes, kill bacteria and inhibit algae, and the anti-corrosion, anti-fouling and anti-algae functions are synchronously achieved. The problem that a traditional photo-anode is single in function is solved, and the photo-anode has the advantages of being high in sunlight utilization rate, high in oxidation-reduction capacity, good in stability and the like and can be widely applied to the fields of ocean engineering corrosion prevention, medical instrument surface treatment, water treatment and the like.

The invention discloses a metal-semiconductor direct current friction nanometer generator based on a depletion mode u-GaN / AlGaN / AlN / GaN high electron mobility transistor. The generator comprises a titanium (Ti) metal friction layer and a depletion mode GaN HEMT friction layer, and direct current is generated through the interface friction volt effect. The core of the invention lies in that high-concentration two-dimensional electron gas (2DEG) and surface state characteristics in the u-GaN / AlGaN / AlN / GaN heterojunction are utilized, and the friction volt effect is combined, so that efficient mechanical energy-electric energy conversion is realized. In the dynamic Schottky contact of the D-GaN HEMT and metal, unbalanced carriers in u-GaN Cap are excited by friction, electrons and holes are separated by a built-in electric field, surface state electrons of u-GaN Cap obtain friction energy to be transited to a conduction band, and a Schottky barrier is overcome to form current; in the sliding process, metal and a semiconductor interact to increase the surface state density, a large number of electrons are excited, chemical bonds are formed, two-dimensional electron gas is formed on an AlN / GaN interface and flows back under a reverse electric field, the electron concentration is maintained, current is continuously generated, and finally direct current is formed in an external circuit.

The present invention discloses an implantable circularly polarized antenna based on a graphene annular loop sector-loaded patch. The radiation patch and the floor material of the antenna are both multi-layer graphene films. The use of multi-layer graphene films to process the antenna can improve the performance of the antenna, effectively reduce losses and improve transmission efficiency. By adding four sector-loaded patches to the annular loop, the design size of the antenna can be effectively reduced. Rectangular branches of the same size and interlaced with each other are added between the four sector-loaded patches to form an interdigitated capacitor structure, thereby reducing the resonant frequency of the implantable antenna. By slitting the conduction band and adding rectangular open-circuit protrusions, geometric perturbations are generated, resulting in circular polarization characteristics. The volume of the antenna is only 5.5×5.5×0.635mm 3 It has the characteristics of wide frequency band, circular polarization, miniaturization, anti-interference, good biocompatibility, etc. It is suitable for the WMTS 1.43GHz frequency band and can meet the working requirements after being implanted in complex environments.

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.

Some embodiments relate to A deep trench isolation (DTI) structure, including: a DTI core extending into a substrate; a first film surrounding the DTI core and having a first material with a first conduction band at a first band energy; a second film between the first film and the DTI core, the second film having a second material with a second conduction band at a second band energy less than the first band energy; and a third film between the second film and the DTI core, the third film having a third material with a third conduction band at a third band energy greater than the second band energy.