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87results about How to "High-frequency operation" patented technology

Thin film write head with improved laminated flux carrying structure and method of fabrication

The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above. Such laminated structures have higher Bs than structures with insulative laminates, and yokes and pole tips and may be integrally formed, if desired, because flux may travel along or across the laminating layers. The preferred embodiment of the present invention improves soft magnetic properties, reduces eddy currents, improves hard axis alignment while not deleteriously affecting the coercivity, permeability, and magnetostriction of the structure, thus allowing for improved high frequency operation.
Owner:WESTERN DIGITAL TECH INC +1

Shift register, display device, and electronic device

The present invention provides a shift register which can operate favorably without providing a level shift portion. The first clocked inverter at the (2n−1)-th stage operates in accordance with the first output from the previous stage, an output from the second clocked inverter at the previous stage, and the first CK signal; the second clocked inverter at the (2n−1)-th stage operates in accordance with the second output from the previous stage, an output of the first clocked inverter at the (2n−1)-th stage, and the first CK signal; one of the first output and the second output is equal to a potential of VDD and the other is equal to a potential of VSS; the first CK signal at the 2n-th stage operates the third output from the (2n−1)-th stage, an output of the second clocked inverter and the second CK signal; the second clocked inverter at the 2n-th stage operates in accordance with the fourth output from the (2n−1)-th stage, an output from the first clocked inverter at the 2n-th stage, and the second CK signal; one of the third output and the fourth output is equal to the potential of VDD and the other is equal to the potential of VSS, and the second CK signal is an inversion signal of the first CK signal and the amplitude of the CK signal is smaller than the power supply potential.
Owner:SEMICON ENERGY LAB CO LTD
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