312results about How to "Reduce switching losses" patented technology

The invention discloses a three-phase permanent magnet synchronous motor full-speed-domain driving control system and a control method thereof. The system is composed of a torque limiting module, a full-speed-domain control neural network module, a current control module, a coordinate transformation module-I, a coordinate transformation module-II, a coordinate inverse transformation module, an SVPWM module, a SiC MOSFET driving module, a full-speed-domain position rotating speed observation module, a weak magnetic feedback module and a three-phase permanent magnet synchronous motor. The control method is used for driving the control system. According to the method, accurate tracing of the optimal dq-axis reference current working point is realized based on deep learning, and accurate control of three operation modes of MTPA, field weakening control and MTPV is realized; an improved mobile vision field estimation algorithm is adopted, and the rotor position and the rotor rotating speed are accurately estimated within the full-speed domain range; the SiC MOSFET is used as an inverter switching tube, and a brand new drive circuit is designed to adapt to the operation condition of the electric vehicle.

The invention relates to the technical field of drivers, and discloses a low-delay control method, system, equipment and medium for a gallium nitride gate driver, and the method comprises the steps: carrying out the feature extraction and nonlinear mapping processing of the driving voltage, gate charge and switching time sequence parameters of the gate driver, and obtaining time domain characteristic data and a parameter distribution model; duty ratio modulation function calculation is carried out to obtain a rising edge duty ratio parameter and a falling edge duty ratio parameter; performing dynamic planning solution on the state transition equation to obtain an optimal control sequence; performing driving control on a gate driver according to the optimal control sequence, and acquiring running state data through a plurality of monitoring points to obtain an actual driving delay value and an actual switching loss value; the Gaussian process model is constructed based on the actual driving delay value and the actual switching loss value, the updated control parameters are obtained through iterative sampling calculation, the optimal control sequence considering multivariable constraints is obtained, and the accuracy of driving control is remarkably improved.

The invention relates to the technical field of semiconductors, in particular to a shield gate trench MOS (Metal Oxide Semiconductor) device, which comprises a substrate, an epitaxial layer, a trench, a first interlayer dielectric layer, a second interlayer dielectric layer, a gate oxide layer, a first shield gate field oxide layer and a second shield gate field oxide layer, the control grid, the first shielding grid and the second shielding grid are located in the groove; the control grid, the first shielding grid and the second shielding grid are of an up-down structure. The second shield grid is located between the first shield grid and the control grid; the first interlayer dielectric layer is located between the first shielding grid and the second shielding grid; the second interlayer dielectric layer is located between the second shield gate and the control gate; the gate oxide layer is located between the control gate and the inner wall of the groove; the first shield gate field oxide layer is located between the first shield gate and the inner wall of the trench; the second shield gate field oxide layer is located between the second shield gate and the inner wall of the trench. The device reduces the gate-drain capacitance, increases the gate-source capacitance, and improves the EMI performance.

The invention relates to the technical field of power supply control, in particular to a power supply control device and a power supply control method and system. The method comprises the following steps: acquiring electromagnetic compatibility parameter data of a power supply device; performing simulation analysis on an electromagnetic environment in the power supply device according to the electromagnetic compatibility parameter data, and predicting high-frequency harmonic waves and electromagnetic interference in a switching process to obtain electromagnetic interference prediction data; performing control design on the soft switch according to the electromagnetic interference prediction data, and generating soft switch control scheme data; switching operation is carried out in the state that the voltage of a switch element is close to zero based on the soft switching control scheme data, current and voltage waveform smooth optimization design is carried out on a resonance circuit, and optimized topological structure data is generated. According to the invention, the overall performance and reliability of the power supply system are significantly improved by improving the electromagnetic compatibility, reducing the switching loss, optimizing the design, monitoring in real time, dynamically adjusting and the like, and the higher requirements of modern electronic equipment on the power supply system are met.

The invention relates to the technical field of automobiles and industrial electronics, in particular to a power device embedded circuit board integrated with a ceramic plate and a preparation method of the power device embedded circuit board, and the power device embedded circuit board comprises the ceramic plate, a power device, a conductor layer, an insulating layer, a metal conduction blind hole, a bottom copper plating layer, an assembly welding layer and a blind groove. Compared with a traditional power module, the switching speed is higher, the switching loss is smaller, and the design is more flexible; compared with a power device embedded circuit board in the market, the circuit board has the advantages of lower thermal resistance, lower temperature rise and higher current output capability. The advantages of a traditional power module and an embedded circuit board are integrated, switching loss is small, thermal resistance is small, and the current output capacity can be greatly improved.

The invention is suitable for the technical field of electronic circuits, and provides a direct current conversion circuit, a switching power supply and electronic equipment. The circuit comprises a current detection module, a driving module, a conversion module and a control module, the driving module is respectively connected with the current detection module, the conversion module and the control module, and the conversion module is respectively connected with the current detection module, the control module and a load. When the direct current conversion circuit is in a light load state and works in an intermittent conduction mode, the control module outputs a control signal according to the output voltage; the current detection module detects a first current flowing through the inductor, and outputs a first level signal when the first current is smaller than a second threshold value, so that the driving module outputs a first driving signal according to the control signal, the first level signal and the clock signal to control the conduction of the power tube; when the first current is larger than or equal to a second threshold value, a second level signal is output, the driving module outputs a second driving signal according to the control signal, the second level signal and the clock signal, and the power tube is controlled to be turned off.

The invention discloses a novel super-junction trench MOS power device and a preparation method thereof, and relates to the technical field of semiconductor devices. The base layer region is arranged on the upper surface of the substrate; the first P-type column and the second P-type column are arranged in the base layer area and are not adjacent to each other; the P-type layer is arranged on the upper surfaces of the first P-type column and the second P-type column; the first groove and the second groove penetrate through the P-type layer and are correspondingly arranged in the first P-type column and the second P-type column; the dielectric layer is arranged on the upper surfaces of the first groove and the second groove; the first contact hole, the second contact hole and the third contact hole penetrate through the dielectric layer and are correspondingly formed in one side of the first groove, one side of the second groove and the P-type layer between the two grooves; and the metal region is arranged in the first contact hole, the second contact hole, the third contact hole and the upper surface of the dielectric layer. The conduction and switching loss of the MOS power device can be reduced, and the impact resistance can be improved at the same time.

The invention provides a varied doping high-reliability planar gate silicon carbide VDMOS and a preparation method thereof, and the method comprises the steps: depositing metal on the lower side surface of a silicon carbide substrate, and forming a drain metal layer; epitaxially growing on the upper side surface of the silicon carbide substrate to form a drift layer; a barrier layer is formed, etching and ion implantation are carried out, and a first N-type region, a second N-type region and a P-type well region are formed; a barrier layer is formed again, etching and ion implantation are carried out, and an N-type source region is formed; a barrier layer is formed again, etching and ion implantation are carried out, and a third N-type region is formed; a barrier layer is formed again, and a gate dielectric layer is formed through etching and deposition; and re-forming a barrier layer, etching, depositing metal, forming a gate metal layer and a source metal layer, and removing the barrier layer to complete preparation. The transverse layout of the on-resistance of the device is accurately controlled, so that the current is uniformly distributed in the device, heat concentration is avoided, and the reliability of the device is improved.

The invention provides a fault-tolerant modulation method and system for a three-level hybrid ANPC inverter, and belongs to the field of three-level hybrid ANPC inverters, and the method comprises the steps: constructing a residual life prediction model of a power switch device and a DC side capacitor; constructing a life factor based on the residual life of the power switch device and the DC side capacitor; sVPWM-FT or DPWM-FT is selected for modulation according to the life factor; a fault-tolerant mode is selected by considering the residual life of a power switch device and a direct current side capacitor, a DPWM-FT with smaller switch loss is selected for modulation when the fatigue damage of the Si-IGBT is serious, an SVPWM-FT with smaller ripple current is selected for modulation when the fatigue damage of the direct current side capacitor is serious, the advantages of the two modulation modes are brought into full play, and the reliability of the system is improved. The switching loss is reduced to a certain extent, the system maintenance burden is reduced, and the reliability of the three-level hybrid ANPC inverter system is improved.

The invention discloses a regulation and control method of a DC-DC electric energy converter for an LED driving power supply. A semi-active resonant converter of which the primary side is a controllable full bridge and the secondary side is a half-controlled half bridge is used; based on the topological structure, an unbalanced variable pulse width modulation method is applied, an inner phase shift angle alpha is introduced to a primary side, and an outer phase shift angle phi is introduced to a secondary side; the optimal working mode operation condition is obtained through mode analysis; obtaining an equivalent power model through a fundamental wave approximation method; and applying a path optimization control strategy on the basis, and outputting an optimal path track of the converter to obtain an optimal control scheme. According to the invention, the converter can realize full-soft switching operation in a full-load range, the switching loss is reduced, the converter operates in an optimal path track, the circulating power is reduced, the stability of output electric energy is improved, and the efficient operation of the system is ensured.

The invention discloses a totem-pole circuit control method, a totem-pole circuit and electronic equipment. The totem-pole circuit control method comprises the following steps: acquiring an output voltage in a switch sub-circuit; obtaining periodic turn-on time and a second counting comparison value by using the output voltage; obtaining an input voltage in the energy storage sub-circuit, a minimum value of a preset negative current and a counting period set value; obtaining a maximum value of energy storage current in the energy storage sub-circuit in response to the condition that the periodic turn-on time is greater than the preset turn-on time; obtaining a first counting comparison value by using the counting period set value, the second counting comparison value, the maximum value and the minimum value; generating a first control signal by using the counting period set value, the second counting comparison value and the first counting comparison value; and adjusting the switching state of the switching sub-circuit by using the first control signal so as to adjust the energy storage current and the output voltage. According to the control method of the totem pole circuit, the conversion efficiency can be effectively improved, and the waveform distortion rate is reduced.

The invention discloses a prediction and calculation method for state track control state switching parameters of a switch resonant converter. The method comprises the following steps: S1, selecting parameters to design an orthogonal experiment table; s2, according to the state of the switch resonant conversion circuit, establishing a formula to analyze the input voltage and the load; s3, establishing a mathematical model with unknown parameters, input voltage and load; and S4, solving unknown parameters by using an LM algorithm to obtain a switching parameter calculation formula. Therefore, the dynamic response speed of the converter is improved.

The invention provides a power factor correction circuit and a control method thereof, and a computer readable storage medium, the power factor correction circuit comprises an inductor module, a power regulation module, a switch module and a control module, the inductor module comprises a first inductor and a second inductor which are connected in series, the power regulation module is connected to the inductor module, and the switch module is connected to two ends of the second inductor. The control module is connected to the power adjusting module and the switch module. The second inductor can be controlled to be connected or not connected through the switch module according to the size of the load, so that the total connection inductance value of the inductor module is reasonably adjusted, the power adjusting module can be started or closed according to the size of the load, and therefore the power adjusting efficiency is improved. According to the power factor correction circuit, the working modes of the power factor correction circuit can be reasonably adjusted according to the size of the load, such as a large inductance value or small inductance value mode and a power adjustment high-frequency operation or closing mode, the inductance loss and the switching loss can be reduced on the premise of meeting power factor correction, and the system energy efficiency is improved.

The invention relates to a compact railway energy regulation and control complex which comprises a converter unit with an intermediate frequency transformer as a core, and an alternating current port of each converter unit is connected with buses of alpha and beta phase traction feeder lines on the secondary side of a V / v traction transformer in series. A magnetic field hedging decoupling inductor and a filter capacitor of the medium-frequency transformer form a secondary harmonic filter branch on the direct current side of each converter unit, non-negligible secondary harmonic components on the direct current side of each converter unit in the single-phase converter system are filtered out, and a power winding of the medium-frequency transformer is connected with a DC / DC converter on the inner side of each converter unit. The compact railway energy regulation and control complex can accurately control the tidal current distribution of the two power supply arms, carries out comprehensive energy regulation and control through a direct current port and an external energy storage and new energy power generation system, can effectively inhibit the voltage fluctuation of a feeder line side, improves the comprehensive energy utilization rate and the new energy consumption rate of an electric railway system, and improves the energy utilization rate of the electric railway system. Compensating the power factor of the high-voltage side of the transformer substation and inhibiting the voltage unbalance degree of the PCC point.

The invention discloses a split gate IGBT (Insulated Gate Bipolar Translator) structure, and belongs to the field of semiconductor devices. Comprising collector metal, a P-type collector region, an N-type field stop layer and an N-type drift region which are sequentially arranged from bottom to top, an N-type storage layer, a P-type body region and emitter metal are sequentially arranged above the N-type drift region, an N + contact region is arranged in the P-type body region, a first oxide layer medium is arranged in the middle of the bottom of the emitter metal, a cross-shaped groove is formed in the N-type drift region, and a second oxide layer medium is arranged in the cross-shaped groove. The cross-shaped groove divides the N-type drift region, the N-type storage layer, the P-type body region and the N + contact region into a left part and a right part. The top of the cross-shaped groove is provided with a gate oxide layer, the bottom of the cross-shaped groove is provided with a second oxide layer medium, the top of the cross-shaped groove is provided with gate polycrystalline silicon which divides the gate oxide layer into a left part and a right part, and the left wide part and the right wide part of the cross-shaped groove are both internally provided with separation gate polycrystalline silicon. According to the split gate IGBT structure provided by the invention, the Miller capacitance and the conduction voltage drop can be effectively reduced.

The invention relates to the technical field of inverters, in particular to a three-phase resonance pole type inverter with low switching loss and wide voltage output range. The inverter comprises a DC voltage source module, a Y-type inversion module, an MOSFET control module, a resonance pole type soft switching module and a three-phase load module. According to the utility model, a Y-shaped inverter structure is adopted, so that wide-range voltage output is obtained, and more types of motors can be driven. Besides, a resonance pole type soft switching module is added to the inverter bridge switching part, so that the inverter can significantly reduce switching loss, and the inverter can have good operation efficiency under high switching frequency. Compared with a traditional three-phase resonance direct-current link inverter, the three-phase resonance direct-current link inverter has a wider output voltage range and lower switching loss, electromagnetic interference and noise pollution of the inverter under high switching frequency can be effectively reduced, and the three-phase resonance direct-current link inverter is very wide in application prospect.

The invention discloses a triple phase shift control modulation method and device for a CLLC type resonant converter and a storage medium, and relates to the technical field of converter control. The method comprises the following steps: carrying out time domain analysis on each stage of the CLLC type resonant converter, and determining resonant current in each mode; calculating the resonance current in each stage, and determining the voltage gain and the primary and secondary resonance current in the corresponding transmission power range to obtain the relationship between the effective values of the voltage gain and the primary and secondary resonance current and the phase shift duty ratios D1, D2 and D3; comparing the influence of different phase shift duty ratios on voltage gain and resonant current under the converter, and determining an optimal phase shift ratio combination; and performing triple phase shift control modulation on the CLLC type resonant converter by using the optimal phase shift phase combination. The triple-phase-shift control modulation method is applied to the converter, the converter can be controlled based on the triple-phase-shift duty ratio, the control freedom degree of the converter is increased, the resonance current is reduced, and the overall operation efficiency under the light load is improved.

The invention discloses a soft switching logic control circuit and method, an inverter and a storage medium, and relates to the technical field of inverter control, the circuit comprises a control module, a first logic module, an isolation driving module and a power module, the first logic module comprises a first fault detection unit and a first logic processing unit; the control module generates a pulse control signal, the first fault detection unit performs fault detection on a plurality of external hardware circuits and outputs a plurality of corresponding first detection signals, and the first logic processing unit performs logic OR processing according to the plurality of first detection signals and outputs a soft switching control signal. And the isolation driving module drives the power module to work normally according to the pulse control signal, and stops receiving the pulse control signal when receiving the soft switching control signal so as to drive the power module to execute soft switching operation according to the soft switching control signal. According to the invention, the switching loss under the normal operation condition is reduced, and the working efficiency of the inverter is improved.

The invention provides a trench type MOSFET device integrated with a junction control diode and electronic equipment, and relates to the technical field of semiconductor devices. The P-type epitaxial layer, the first P-type masking layer and the second P-type masking layer are grounded, a better electric field shielding effect can be obtained during reverse voltage withstanding, and voltage jump caused by floating of the P-type epitaxial layer, the first P-type masking layer and the second P-type masking layer can be avoided in the switching process, so that degradation of the switching characteristic of the device is avoided. Moreover, a junction-controlled fly-wheel diode region is led out between the two trench MOSFET regions, and the conduction voltage drop of the integrated junction-controlled fly-wheel diode is lower than that of a body diode of the device, so that the conduction of the body diode is shielded; moreover, the junction-controlled fly-wheel diode is a unipolar device, does not have a minority carrier storage effect, is short in reverse recovery time, can reduce the switching loss of the device, and improves the performance of the trench type MOSFET device.

The invention provides an SGT device for optimizing gate capacitance and a preparation method, and belongs to the technical field of SGT devices, the SGT device comprises an N-type heavily doped region and an epitaxial layer, a groove is formed in the epitaxial layer, source polycrystalline silicon is arranged in the groove, a side wall oxide layer is arranged between the outer side of the source polycrystalline silicon and the inner wall of the groove, and the side wall oxide layer is arranged on the outer side of the N-type heavily doped region. Gate polycrystalline silicon is arranged at the top of the side wall oxide layer, the gate polycrystalline silicon comprises P-type doped polycrystalline silicon and N-type doped polycrystalline silicon which are connected, a gate oxide layer is arranged between the gate polycrystalline silicon and the inner wall of the groove, and a P-type body region is arranged in the epitaxial layer; the SGT device has the beneficial effects that N-type doped source polycrystalline silicon in an original structure is replaced by the longitudinal PN junction, so that the gate capacitance of the SGT device has a reduction space, the gate capacitance can be reduced, and the effect of optimizing the gate capacitance of the device is achieved.

The invention discloses a permanent magnet motor direct torque control method and system based on model prediction and a medium, and belongs to the technical field of permanent magnet synchronous motor control. According to the permanent magnet synchronous motor direct torque control method based on model prediction, two-phase current of a permanent magnet synchronous motor is processed by constructing a Clarke transformation model, a flux linkage and torque model, a voltage vector optimization model, a switching time calculation model, a cost function minimization model and a three-phase inverter control model, a space voltage vector is determined, and the direct torque of the permanent magnet synchronous motor is obtained. And switching action information of a switching tube is obtained and is used for controlling bus voltage to be input into the permanent magnet synchronous motor, so that the permanent magnet synchronous motor is driven, and direct torque control of the permanent magnet synchronous motor based on model prediction is completed, and therefore, the switching state of a switch can be controlled to be optimal, and torque pulsation is effectively reduced; therefore, the system operation efficiency is effectively improved, the system stability is improved, the switching loss is reduced, and the scheme is scientific, reasonable and feasible.

The invention relates to a double-sided heat dissipation power module with a plane mosaic structure. The double-sided heat dissipation power module comprises a first substrate with a first conductive metal layer, a second substrate with a second conductive metal layer and a plurality of power chips, the first conductive metal layer comprises an AC conductive metal layer and a plurality of upper DC-conductive metal layers; the second conductive metal layer comprises a DC + conductive metal layer and a plurality of lower DC-conductive metal layers; the plurality of power chips comprise a plurality of upper tube power chips and a plurality of lower tube power chips; the plurality of lower tube power chips are arranged on the AC conductive metal layer, are staggered with the plurality of upper tube power chips, and are connected with the plurality of lower DC-conductive metal layers in a one-to-one correspondence manner; an independent power loop exists between each upper tube power chip and the adjacent lower tube power chip, and mutual inductance of the two opposite power loops is offset in the vertical direction and the horizontal direction. According to the power module, the mutual inductance offset effect is improved by increasing the number of current paths.

The invention discloses a push-pull inverter circuit and a high-frequency power supply device. The circuit comprises an input interface and a voltage transformation module, a first switch module is connected between a first end and a grounding end of a primary side coil, and a control end of the first switch module is used for inputting a first control signal; the second switch module is connected between the second end of the primary side coil and the grounding end, and the control end of the second switch module is used for inputting a second control signal; the resonance network is connected with the primary side coil, the first switch module and the second switch module, and the resonance network is used for adjusting soft switching of the first switch module according to the first control signal; and the second switch module is adjusted to perform soft switching according to the second control signal. According to the push-pull inverter circuit, transient voltage and current peaks in the switching process of the switch module can be reduced, the loss of the push-pull inverter circuit under high frequency is reduced, the switch module can work at low temperature conveniently, the reliability of the circuit is improved, the service life of the circuit is prolonged, the working frequency of the push-pull inverter circuit is improved, and the size of the push-pull inverter circuit is reduced.

The invention belongs to the field of semiconductors, and discloses a multistage junction termination structure of a vertical GaN diode and a preparation method. Comprising a sapphire substrate, and a GaN nodule layer grows on the sapphire substrate; a silicon-doped n +-GaN layer is grown on the GaN nodule layer, a silicon-doped n-GaN layer is grown on the n +-GaN layer, a magnesium-doped p-GaN layer is grown on the n-GaN layer, and a magnesium-doped p +-GaN layer is grown on the p-GaN layer; etching from the p < + >-GaN layer to the n < + >-GaN layer, and preparing a negative electrode on the surface of the n < + >-GaN layer; etching from the p +-GaN layer to the p-GaN layer to form a continuous multi-stage step, and preparing a positive electrode on the surface of the p +-GaN layer; after the multi-stage step junction termination structure is introduced, the electric field aggregation phenomenon is obviously relieved, which indicates that the junction termination structure effectively reduces the internal electric field peak value.

The invention discloses a voltage conversion circuit for wide input voltage, an electric meter and a control method, a first-stage power conversion circuit detects the magnitude of voltage of an input bus, when a detection signal of the input bus is smaller than a set threshold voltage, the first-stage power conversion circuit performs driving work, otherwise, the first-stage power conversion circuit stops driving work, and the first-stage power conversion circuit stops driving when the detection signal of the input bus is smaller than the set threshold voltage; the second-stage power conversion circuit receives the output voltage of the first-stage power conversion circuit so as to convert the output voltage into expected output voltage, and the set threshold voltage is set according to the withstand voltage value of a power tube of the first-stage power conversion circuit. According to the technical scheme of the invention, the withstand voltage of the main power switch tube of the first-stage power conversion circuit can be controlled, so that the switch tubes with medium and low withstand voltage can be selected, the switching loss and cost of the switch tubes are greatly reduced, and the stress of the system is improved.

The invention relates to a motor control technology, and discloses a motor control method and device and a storage medium, which can effectively reduce the switching loss and improve the temperature rise performance of an MOS (Metal Oxide Semiconductor) chip. The method comprises the following steps: acquiring a rotating speed control signal of a motor in real time to determine a target duty ratio corresponding to the rotating speed control signal; collecting a Hall signal of the motor in real time to determine a real-time electrical angle of the motor; according to the real-time electrical angle, real-time proportionality coefficients corresponding to the three phases of the motor are determined, and the real-time proportionality coefficient of one phase is zero; multiplying the real-time proportionality coefficient corresponding to the three phases of the motor by a target duty ratio, and determining a real-time signal duty ratio corresponding to the three phases of the current motor; and outputting a corresponding signal according to the real-time signal duty ratio, and adjusting the rotating speed of the motor. According to the invention, at any time, only the MOS chips of the two-phase bridge arms can be switched on and off, and the two MOS chips of the upper and lower bridge arms of the remaining phase can be kept on and off, so that the switching loss is effectively reduced, and the temperature rise performance of the MOS chips is improved.

The invention discloses a flyback converter control circuit, a control method and a switching power supply, the flyback converter comprises a primary side main power tube and a secondary side synchronous rectifier tube, the flyback converter control circuit comprises a primary side control circuit, a secondary side control circuit and a secondary side control circuit, the primary side control circuit is used for controlling the primary side main power tube to be switched on and switched off periodically in a starting stage after power-on so as to enable the secondary side to be powered on, and the secondary side control circuit is used for controlling the secondary side synchronous rectifier tube to be powered on; and the secondary side control circuit enables the synchronous rectifier tube to follow current after the main power tube is turned off, and sends a zero-voltage starting control signal to conduct the synchronous rectifier tube after the secondary side is electrified, so that negative current is generated on the main power tube. The primary side control circuit controls the main power tube to maintain the turn-off state within a first time period after the follow current of the synchronous rectifier tube is detected to be finished, and the time period when the secondary side control circuit generates the zero-voltage turn-on control signal is within a second time period after the actual follow current of the synchronous rectifier tube is finished. The end time of the second time is earlier than or equal to the end time of the first time. The primary side and the secondary side are conducted in a time-sharing mode, and common connection of the primary side and the secondary side is avoided in the starting stage.

The invention discloses a semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductors, and the manufacturing method comprises the steps: providing a substrate, forming a shielding gate lead groove and a shielding gate groove in the substrate, and enabling the opening width of the shielding gate lead groove to be smaller than half of the opening width of the shielding gate groove; a shield gate dielectric layer is deposited in the substrate and the groove; depositing a first gate material layer on the shield gate dielectric layer, wherein the surface of the first gate material layer is flush with the surface of the substrate; forming a protection layer on the first gate material layer, wherein the surface of the protection layer is flush with the surface of the shielding gate dielectric layer; performing inclined etching on two sides to remove the protection layer in the shield gate groove; removing a part of the first gate material layer in the shield gate trench to form a shield gate and a lead gate; forming an inter-gate dielectric layer with a flat surface on the shielding gate; and forming a control gate on the inter-gate dielectric layer. According to the semiconductor device and the manufacturing method thereof provided by the invention, the performance of the semiconductor device can be improved, and the production cost is reduced.

The invention discloses a totem-pole PFC circuit control method and device based on an improved SOGI-PLL, and belongs to the technical field of totem-pole PFC circuits, and the method comprises the steps: collecting the input voltage, input current and bus voltage of a totem-pole PFC circuit; synchronous phase information of the power grid voltage is obtained through an improved second-order generalized integral phase-locked loop; generating a current amplitude reference signal, and combining the current amplitude reference signal with the synchronous phase information to synthesize a current reference signal; generating a pulse width modulation signal for controlling a high-frequency switching tube; and a switching signal of the power frequency switching tube is generated based on the synchronous phase information, and the power frequency switching tube and the high-frequency switching tube are driven in combination with the pulse width modulation signal, so that the action time sequence is synchronous with the phase of the power grid voltage, and therefore, waveform tracking of the input current is realized, and current distortion at the zero crossing point is suppressed. Precise phase synchronization is realized based on the improved SOGI-PLL, totem pole PFC zero-crossing current distortion is effectively suppressed, and the power factor and waveform quality are improved.

The invention relates to a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device with fast recovery and low power consumption characteristics, and belongs to the technical field of semiconductors. The device includes: a drain metal contact; the substrate is formed on the contact surface of the drain electrode metal; the drift region is formed on the surface of the substrate; the NCSL is formed on the surface of the drift region; the first Pbase is formed on the surface of the NCSL; the first source region is formed on the surface of the first Pbase; the second Pwell is formed on the surface of the drift region; the second P + region is formed on the surface of the second Pwell; the first P-well is formed on the surface of the drift region; the first P + region is formed on the surface of the first Pwell; the MOS channel diode is formed on the surface of the second P-well; the L-shaped split gate is formed on the surfaces of the MOS channel diode and the NCSL; and a source metal contact formed on the top of the device.