162results about How to "Increase the oscillation frequency" patented technology

A method for tuning an electro-mechanical device such as a MEMS device is disclosed. The method comprises operating a MEMS device in a depressurized system and using FIB micromachining to remove a portion of the MEMS device. Additionally, a method for tuning a plurality of MEMS devices by depositing an active layer and then removing a portion of the active layer using FIB micromachining. Also, a method for tuning a MEMS device and vacuum packaging the MEMS device in situ are provided.

A method of capturing images using a laser scanner equipped with a 2D micro actuator. The 2D micro actuator allows for laser beam location without the use of additional components dedicated to determining beam location. The 2D micro actuator is used to stabilize the positioning function of the spot in the scene. The micro actuator is a 1D micro actuator suspended within a second framework by two torsion bars and two pairs of orthogonal additional electrodes. The image is scanned, a precise rectangle of the character sensing field is generated and the image is created by keeping a substantially constant pitch.

The invention relates to a voltage controlled oscillator, which comprises four transistors, an integrated on-chip inductor and two symmetric variable capacitors, wherein, two transistors realize negative resistance through cross coupling, thereby providing energy to oscillate an LC circuit comprising the inductor and the variable capacitors; by changing the capacitance of the variable capacitors, different output frequencies of the oscillator are obtained. The invention also comprises two resistors with the same value and two capacitors with the same value; a grid terminal of one of the rest transistors is connected with a terminal of a resistor and a terminal of a capacitor at the same time, which jointly form an active inductor; a grid terminal of the last transistor is connected with a terminal of a resistor and a terminal of a capacitor at the same time, thus jointly forming another active inductor; the two active inductors provide bias current for the voltage controlled oscillator. The invention enlarges the tuning range of the voltage controlled oscillator and reduces the phase noise.

The invention discloses an inter-satellite terahertz communication system architecture which comprises a transmitter and a receiver which are arranged on a satellite platform. When a terahertz frequency range is a low frequency band smaller than 10THz, the transmitter adopts a huge-amount terahertz antenna array; when the terahertz frequency range is a high frequency band of 10THz to 30THz, the transmitter is a terahertz laser; when the terahertz frequency range is the low frequency band or the high frequency band, the receiver is a huge-amount terahertz antenna array; the huge-amount terahertz antenna array comprises 104 to 107 magnitude orders of antenna array elements; the huge-amount terahertz antenna array is made by a semiconductor process, and a plurality of antenna array elements working at different wavelengths are achieved by utilizing the same process, thereby achieving a multi-frequency MIMO (Multiple Input Multiple Output) system; and after the receiver receives a terahertz wave, information is extracted by a detection quantum device, and the same detection quantum device is driven by adopting a plurality of antenna array elements. The system architecture disclosed by the invention fuses the advantages of infrared laser communication and millimeter wave communication.

A showerhead with oscillating water includes an inlet passage connected to an outlet passage and an oscillator assembled inside the shower head. The oscillator has a main body with an inlet, a ball shaped oscillating cavity, and an outlet. The ratio of the inner diameter of the inlet, the inner diameter of the oscillating cavity and the minimum inner diameter of the outlet is 1:2.5-5:1.1-1.35. The water of the inlet flowing into the oscillating cavity divides into a main waterway and a feedback waterway, water of the main waterway flowing out of the outlet through the oscillating cavity, water of the feedback waterway flows back to the inlet through the cavity wall of the oscillating cavity, water of the main waterway flows out of the outlet in a circumferential cyclical shaking way under the compact of the water of the feedback waterway.

The invention discloses a superfine grinding oscillation mechanism which comprises an oscillation mechanism on a superfine grinding machine. Two balance wheels between left and right balance blocks are rotatably connected with a Geneva wheel together; the Geneva wheel is composed of two symmetric parts which are fixed on rotation shafts by bolts respectively; a drive wheel is mounted on the rotation shafts on the two sides of the Geneva wheel in a manner symmetrically protruding out of a shaft surface; and a transmission plate is coupled between the drive wheel and a ram. Through the invention, the oscillation frequency can be improved by more than one time, the oscillation conversion is smooth, the impact is obviously reduced, and the superfine grinding oscillation mechanism is favorable for improving the processing efficiency as well as surface accuracy and quality of products.

The present invention relates to a high linearity GaN fin-type high electron mobility transistor and a manufacture method thereof. From bottom to top, the transistor sequentially comprises a substrate, a buffer layer, a barrier layer, and a passivation layer. A source electrode is arranged at one end above the barrier layer and a drain electrode is arranged at the other end. The passivation layer is arranged above the barrier layer between the source electrode and the drain electrode. A groove is arranged in the passivation layer. A T-shaped gate is arranged in the groove. The transistor is characterized in that GaN-based three-dimensional fins in periodical arrangement are etched only on the barrier layer and the buffer layer in an area below the groove, the length of the GaN-based three-dimensional fins is equal to the length of the groove, and an isolation groove that is etched is arranged between adjacent GaN-based three-dimensional fins. The transistor has high linearity and output current, strong gate control capability, good heat dissipation performance, and high frequency characteristic. The manufacture method is simple and reliable, and is applicable to high power, high linearity microwave power devices.

Provided is a voltage-controlled oscillator that can hold an oscillation frequency at a desired value when an oscillation frequency changes due to the temperature, without narrowing a variable range of the oscillation frequency, and a PLL circuit, an FLL circuit, and a wireless communication device, which use the voltage-controlled oscillator. A control voltage Vt is applied to a connection point Y between variable capacitors 121 and 122 included in a variable capacitance circuit 120. A control signal Fse1 is applied to a switching element 132 included in a capacitance switching circuit 130. A power-supply voltage Vdd is applied by a control section 170 to a connection point X between inductors 111 and 112 included in an inductor circuit 110. A voltage value of the power-supply voltage Vdd is controlled such that the oscillation frequency of the local oscillation signal is held at a constant regardless of a temperature change.

An eddy current sensor is used for detecting a metal film (or conductive film) formed on a surface of a substrate such as a semiconductor wafer. The eddy current sensor is disposed near the metal film or the conductive film formed on the substrate to detect an eddy current generated in the metal film or the conductive film. The eddy current sensor includes a plurality of coils having different sizes formed by winding a wire or a conductive material. The plurality of coils includes an inner coil and an outer coil spaced from each other, and the outer coil is configured to surround the inner coil. The plurality of coils are configured to detect respective eddy currents generated in the metal film or the conductive film.

The invention discloses a complementary metal-oxide-semiconductor (CMOS) ring oscillator based on a mixed crystal orientation silicon on insulator (SOI) technology and a manufacturing method thereof. The oscillator comprises an SOI substrate and a CMOS device which is manufactured on the SOI substrate. The CMOS device comprises an N-channel metal-oxide-semiconductor (NMOS) device and a P-channel metal-oxide-semiconductor (PMOS) device; a channel of the NMOS device is made of a crystal face silicon material (100); and a channel of the PMOS device is made of crystal face silicon material (110). The CMOS device is provided with window epitaxial substrate silicon on a mixed crystal orientation SOI substrate, so that the NMOS device and the PMOS device are formed on the top silicon of the crystal face (100) and an epitaxial silicon layer (110) respectively. According to the invention, the width of a CMOS transistor in the CMOS ring oscillator can be reduced, the integration density is enhanced, the transmission delay time of a NOT gate is reduced, and the oscillation frequency is increased.

The invention provides an ink box chip and an operating method thereof as well as an ink box. The ink box chip comprises a substrate; a communication unit and an electronic module are arranged on the substrate; the communication unit comprises two detection contacts; the electronic module is provided with a control unit and a storage device, and is further provided with a piezoelectric signal generation circuit electrically connected with the detection contacts; the piezoelectric signal generation circuit is provided with a capacitor and a transformer; a primary coil of the transformer is connected in parallel with the capacitor; a secondary coil of the transformer is connected in series with a switching device; and a control end of the switching device is connected with the control unit. The operation method of the ink box chip comprises the following steps: the storage device receives the ink allowance data printed by an ink-jet printer, the controller judges whether the printed ink allowance data is lower than a threshold value or not; and if the printed ink allowance data is lower than a threshold value, a continuity signal is output to the switching device, and conversely a stop signal is output to the switching device. The chip can output a piezoelectric signal with different vibration frequencies, and avoids the condition that the ink box and the ink-jet printer abnormally work.

The invention discloses a relaxation-type voltage-controlled oscillator, which is composed of a charging capacitor, a switching tube assembly, a comparison circuit, a charging current source and a logic control circuit, and is characterized by being provided with the charging current source which is formed by a constant current source and a controlled current source in parallel; the switching tube assembly is formed by a first group and a second group of four switches; the charging capacitor is connected with a first group of switching tubes and a second group of switching tubes; the comparison circuit is formed by a cross-coupled geminate transistor, and is connected with the two positive and negative ends of the charging capacitor; the cross-coupled geminate transistor comprises a first clamper tube and a second clamper tube, wherein, the input end of the first clamper tube is connected with the output end of the second clamper tube; and the input end of the second clamper tube is connected with the output end of the first clamper tube. The relaxation-type voltage-controlled oscillator of the invention adopts the break-over voltage of a semiconductor tube as a comparison voltage, improves the oscillating frequency through improving the structure of the controlled circuit source, has high linearity, adopts a current source to avoid the consistency problem of the process, and is easier to realize.

An LED drive circuit of the present invention carries out, by use of a DC-to-DC converter, light control of an LED. The light control is carried out, in a region where a light control level is equal to or greater than a certain light control level, by a DC light control method for adjusting a pulse height of an LED drive current. The light control is carried out, in a region where a light control level is equal to or less than the certain light control level, by a PDM light control method for adjusting an off period of oscillation of the DC-to-DC converter.