The invention discloses a thermocompression resistance PT symmetrical
MEMS pressure sensor, which comprises two resonators with identical structures, and the two resonators are connected through a group of
coupling spring beams. Each
resonator comprises four anchor areas connected with the thin film substrate, narrow beams which are connected with the four anchor areas and have a
piezoresistive effect, and a
mass block connected with the four narrow beams, and the four anchor areas are symmetrically distributed on the two sides of the
mass block. For one of the resonators, a current path is formed through connection of a
constant current source in the anchor section on the same side of the
mass block. Under the action of a
constant current source, hot resistance pressing feedback is generated at narrow beams of the resonators, so that the two coupled resonators form a PT symmetric
system, and the PT symmetric resonators are initially arranged at an Exception Point (EP) point. When pressure acts on the lower surface of the substrate, the substrate generates strain, the position of the anchor area is driven to change, the rigidity of the
resonator is changed, a PT symmetric
system deviates from an EP point, the
system eigenfrequency is split and shows pull-ratio oscillation, and the frequency splitting amount depends on the pressure borne by the substrate. Because the EP point has a large response to tiny disturbance, the thermal
pressure resistance PT symmetric
MEMS pressure sensor can realize accurate measurement of weak pressure change, and has the advantages of high sensitivity and simple manufacturing process.