401results about How to "Lower junction temperature" patented technology

An electronic module and method of fabrication are provided employing an integrated thermal dissipation assembly. The thermal dissipation assembly includes a thermoelectric assembly configured to couple to an electronic device within the module for removing heat generated thereby, and a programmable power control circuit integrated with the thermoelectric assembly. The programmable power control circuit allows cooling capacity of the thermoelectric assembly to be tailored to anticipated heat dissipation of the electronic device by adjusting, for a given power source, voltage level to the thermoelectric elements of the thermoelectric assembly. Power to the thermoelectric assembly can be provided through conductive power planes disposed within a supporting substrate. The power control circuit includes one or more voltage boost circuits connected in series between the given power source and the thermoelectric elements of the associated thermoelectric assembly.

A light-emitting device held on a fixture body includes an LED chip, a heat transfer plate made of a thermally conductive material on which the LED chip is mounted, a wiring board having, on one side, patterned conductors, for supplying an electric power to the LED chip and formed with an aperture (exposure part) through which a LED chip mount surface of the heat transfer plate is exposed, an encapsulation part in which the LED chip is encapsulated on the one side of the wiring board, and a dome-shaped color-changing member made of a fluorescent material and an optically transparent material and placed on the one side of the wiring board. The light-emitting device is bonded to the fixture body with an insulating layer interposed therebetween, and the insulating layer has electrical insulating properties and is interposed between the heat transfer plate and the fixture body to thermally couple the same.

A lighting device comprising a solid state light emitter and a fan, the fan blowing fluid toward the emitter. A lighting device comprising a solid state light emitter and a baffle, the solid state light emitter being movable. A lighting device comprising a solid state light emitter, a substrate and a diaphragm, the diaphragm defining a chamber having a valve and being movable. A lighting device comprising a housing and a solid state light emitter within the housing, the solid state light emitter being movable. Also, methods of cooling a lighting device.

A thermal interface includes a plurality of elevated regions and a plurality of mechanical tolerance circuits coupled to the plurality of elevated regions. The thermal interface is configured to be disposed between an array of heat generating elements and a heat sink with each of the plurality of elevated regions thermally coupled to a corresponding one or more of the array of heat generating elements. In one embodiment, the thermal interface provides a thermal path between a printed wiring board having a plurality of flip-chip circuit components disposed on an external surface thereof and a heat sink disposed over the flip-chip circuit components.

The invention relates to a light-emitting apparatus. The light-emitting apparatus includes a heat-conducting/dissipating module and at least one semiconductor light-emitting module. The heat-conducting/dissipating module includes a substantially cylindrical heat-conducting device having at least one flat portion and at least one heat-dissipating fin mounted on the circumference of the heat-conducting device. The at least one semiconductor light-emitting module includes a carrier, a plurality of exterior electrodes, at least one semiconductor light-emitting die, and at least two conducting wires. The carrier is flatly mounted on the flat portion of the heat-conducting device. The plurality of exterior electrodes is disposed on the carrier. The at least one semiconductor light-emitting die is mounted on the carrier and respectively connected to the plurality of exterior electrodes. The at least two conducting wires are connected to a power source or a grounding by being electrically connected to the plurality of exterior electrodes.

A light emitting diode (LCD) comprised of a heat conduction substrate, a circuitry on the substrate, an insulation layer between the substrate and the circuit, multiple light emitting chips distributed in the space between the circuitry and the substrate, light emitting chips being connected to the circuitry through metallic conductor, and a light permeable protection layer being topped on those light emitting chips to significantly improve its power dissipation effect, lower light emission chip junction temperature, increase light emission efficacy and service life, increase the quantity of the light emission chip of unit area, and improve the light emission efficiency of unit area.

A thermal management configuration for a flip chip semiconductor device is disclosed. The device includes a high power silicon based die having a metal bonding surface. A plurality of interconnects are formed on the metal surface and connected to a substrate. A plurality of thermal management stud bumps are formed on the metal bonding surface, the thermal management stud bumps positioned distinct from the interconnects and local to die hot spots, exposed ends of the thermal management stud bumps spaced from the substrate.

The invention provides a structure for a low thermal resistance LED chip and a method for manufacturing the same. The LED chip comprises P and N electrodes used for manufacturing electrodes, the LED luminous chip on a semiconductor epitaxial layer and a sapphire substrate, and a metallic reflector layer deposited on the bottom of the thinned sapphire substrate. The structure is characterized in that the LED chip comprises: (a) a heat radiating substrate with low thermal resistance, in which the size is larger than that of the LED luminous chip; and (b) solder deposited on the heat radiating substrate with low thermal resistance connected with the bottom of the metallic reflector layer. The area of the heat radiating substrate with low thermal resistance is 2 to 25 times larger than the area of the LED luminous chip. The invention can increase the area of heat dissipation channel when the LED luminous chip, significantly reduce thermal resistance of the LED luminous chip and packaged devices, reduce the light decay of LED devices and drain current, and prolong the life service of the devices.

A semiconductor laser diode using the aluminum gallium, arsenide, gallium indium arsenide phosphide, indium phosphide, (AlGaInAs/GaInAsP/InP) material system and related combinations is disclosed. Both the design of the active layer and the design of the optical cavity are optimized to minimize the temperature rise of the active region and to minimize the effects of elevated active layer temperature on the laser efficiency. The result is a high output power semiconductor laser for the wavelengths between 1.30 and 1.61 micrometers for the pumping of erbium doped waveguide devices or for direct use in military, medical, or commercial applications.

The invention discloses a light emitting diode (LED) spherical lamp transmitting heat through liquid. The LED spherical lamp comprises a lamp cap assembly formed by a lamp cap and a lamp connecting seat, a hollow radiator, a driving power supply, a light emitting assembly formed by a light engine module and a high-transmittance temperature-resistant protective cover, and a glass cover, wherein a power supply containing cavity is arranged inside the hollow radiator, a seal cover is sleeved outside the driving power supply, the bottom of the seal cover is connected with the inner circumferential wall of the hollow radiator in sealed mode, a sealed liquid circulation radiating channel is formed by a gap between the high-transmittance temperature-resistant protective cover and the glass cover and a gap between the seal cover and the hollow radiator in communicated mode, and high-thermal conductivity liquid is installed in the liquid circulation radiating channel. Heat produced by light of lighting of LED lamp beads in the light engine module heats the high-thermal conductivity liquid, the high-thermal conductivity liquid produces convection in the liquid circulation radiating channel after being heated, the heat is diffused into air through the glass cover and the hollow radiator, and the radiating mode is good in effects, and the junction temperature of the LED lamp beads can be effectively reduced.

The present invention provides a solid-state lighting fixture and lamp for down light for use in applications especially in recessed lighting. In particular, the lamp of the subject invention may be configured as a direct screw-in replacement for common R-30 style incandescent flood lamp and it may be used existing luminaires. In one preferred embodiment of the present invention, a lamp mounted in a recessed light luminaire for down lighting has one or more light emitting diodes (LEDs) that are thermally coupled to a heat sink having fins for cooling by ambient air. The fins are configured so that air warmed by the fins can rise inside the luminaire and transfer its heat to it. Air cooled by the luminaire is allowed to sink and may flow out of the luminaire via a gap between the heat sink and the luminaire. Fresh cooler air may be drawn in between the fins to replace out-flowing air. This process of heating and cooling of air established a natural convection flow. Natural convective air flow allows for efficient thermal communication between the heat sink and the luminaire, thereby allowing for lower LED junction temperature and longer LED lifetime.

A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 [mu]m. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.

The invention discloses a high power LED source for heat conduction by using a room temperature liquid metal, which comprises an LED chip, a concave package substrate, a room temperature liquid metallayer, a sealing layer, a radiator and a fluorescent adhesive layer. The LED chip is mounted on the concave package substrate, and an optical reflection surface is arranged on the concave package substrate. The fluorescent adhesive layer is covered on the LED chip and the concave package substrate is mounted on the radiator. A gap is arranged between the concave package substrate and the radiatorand is sealed by the sealing layer, and the gap is filled with the room temperature liquid metal layer. The method effectively solves the problem of the thermal contact resistance between the high power LED package substrate and the radiator by using the high heat conductivity of the room temperature liquid metal, thereby achieving a better heat conduction effect; and the heat generated by the LEDchip is transferred, and the junction temperature of the LED chip is kept at a low level, thereby improving the operation reliability of the high power LED and prolonging the service life thereof.

The invention provides a quantum well semiconductor and a manufacturing method thereof. The quantum well semiconductor comprises a substrate, a shallow quantum well layer and a multiple quantum well light emitting layer that are arranged in sequence from inside to outside, wherein the shallow quantum well layer comprises at least four InGaN layers and GaN layers; the InGaN layer close to the substrate is a first InGaN layer; the number of the GaN layers is the same as that of the InGaN layers; the GaN layers and the InGaN layers are superposed in a crossed manner; the GaN layer close to the substrate is a first GaN layer; the first GaN layer is arranged between the substrate and the first InGaN layer; the content of In in the first InGaN layer is 1.95E+19-2.7E+19cm<-3>; and the content of In in each of all the InGaN layers except the first InGaN layer is greater than 3.0E+19cm<-3> and is increased gradually in the direction far away from the substrate. The shallow quantum well layer can prevent excessive reverse current, facilitates pass-through of electrons, reduces the forward voltage and heat productivity of a chip during operation, and improves the light emitting efficiency.

A light-emitting device includes a flip-chip LED semiconductor chip to provide a primary light, a photoluminescent (PL) structure disposed on the LED semiconductor chip and a moisture-barrier reflective structure covering a chip-edge surface of the LED semiconductor chip and a photoluminescent-side surface of the PL structure. The sequentially stacked PL structure includes a first PL layer, a transparent isolation layer, a second PL layer and a transparent moisture barrier layer. For example, the LED semiconductor chip emits a blue light, the first PL layer includes a red phosphor material, and the second PL layer includes a green quantum dot (QD) material. Therefore, the red phosphor material of the first PL layer can convert a portion of the higher-energy-level blue light into a lower-energy-level converted red light, so as to reduce an intensity of an unconverted portion of the blue light reaching the green QD material within the second PL layer.

The invention discloses a packaging substrate structure for an LED and a production method thereof. An LED substrate of the invention is characterized in that a boss with the specific size, shape and height is formed on a die bonding or eutectic position of a common LED substrate; and the boss is directly connected with the substrate. The substrate outside the boss is paved with a circuit connection layer. An LED chip is bonded on the boss in a die bonding or eutectic mode. Compared with the common metal PCB, the LED substrate on the boss position reduces an insulating material layer with bad heat-conducting property so that the heat generated by the high-power LED chip can be better dissipated through the substrate from the bottom. The boss structure increases the utilization of the emitted light on the lateral surface of the LED chip, improves the light-extraction efficiency, reduces the influence of the reflector cup, increases the light emergent angle, and greatly improves the light color distribution of the LED.