404results about How to "Lower junction temperature" patented technology

A method of forming a high-power, high-frequency device in wide bandgap semiconductor materials with reduced junction temperature, higher power density during operation and improved reliability at a rated power density is disclosed, along with resulting semiconductor structures and devices. The method includes adding a layer of diamond to a silicon carbide wafer to increase the thermal conductivity of the resulting composite wafer, thereafter reducing the thickness of the silicon carbide portion of the composite wafer while retaining sufficient thickness of silicon carbide to support epitaxial growth thereon, preparing the silicon carbide surface of the composite wafer for epitaxial growth thereon, and adding a Group III nitride heterostructure to the prepared silicon carbide face of the wafer.

A semiconductor device for dissipating heat generated by a die during operation and having a low height profile, a semiconductor die package incorporating the device, and methods of fabricating the device and package are provided. In one embodiment, the semiconductor device comprises a thick thermally conductive plane (e.g., copper plane) mounted on a thin support substrate and interfaced with a die. Thermally conductive via interconnects extending through the substrate conduct heat generated by the die from the conductive plane to conductive balls mounted on traces on the opposing side of the substrate. In another embodiment, the semiconductor devices comprises a thick thermally conductive plane (e.g., copper foil) sandwiched between insulative layers, with signal planes (e.g., traces, bonding pads) disposed on the insulative layers, a die mounted on a first signal plane, and solder balls mounted on bonding pads of a second signal plane. A thermally conductive via interconnect extends through the substrate to provide a thermal path from the die and signal plane (traces) through the thick conductive plane and into the solder balls and external device (e.g., mother board). The present semiconductor device provides effective heat dissipation without the attachment of an external heat sink or spreader.

The invention relates to a light-emitting diode lamp comprising a lamp body, an optics part, a heat radiation part and an electric part, wherein the lamp body is provided with a plurality of transom windows, the heat radiation part and the electric part are arranged in the lamp body, the heat radiation part comprises a mounting seat and a heat radiator provided with a plurality of fins. The mounting seat is arranged at one end of the heat radiator, near the optics part, and is in heat-conduction connection with the heat radiator; the mounting seat is a polyhedron and comprises a polygonal heat conduction surface facing the heat radiator and a plurality of heat absorption surfaces. The electric part is arranged at the rear end of the heat radiation part and comprises a circuit board. The optics part is arranged at the front end of the heat radiation part and comprises a plurality of light-emitting diode light sources, a reflecting cover and a light guide cover. The light sources are arranged on the heat adsorption surface of the mounting seat; the reflecting cover is arranged between the light sources and the heat radiator and is provided with a reflecting surface facing the light sources; the light guide cover is arranged at the outer side of the reflecting cover, and the light sources and the mounting seat are arranged in the light guide cover; and the heat adsorption surface extends towards the light guide cover from the margin of the heat conduction surface.

A densely packed electronic assemblage has a substrate media for supporting at least one heat generating component and means for reducing the temperature of the at least one heat generating component. A heat sink cooperates with the heat removing element for reducing heat of the at least one heat generating component by absorbing heat from the at least one heat generating component.

An LED lamp utilizes AC power and bi-directional LED chips to provide dimming capabilities. The dimming capabilities of the lamp reduce the junction temperature of the LEDs on the bi-directional LED chips and thus prolong the life expectancy of the LED lamp.

Structure of the disclosed LED raises effect of heat elimination remarkably, reduces junction temp of luminescence chip, and raises luminous efficacy and lifetime of LED. Also the disclosed LED increases quantity of luminescence chip in unit area and luminous efficiency in unit area. Structure of LED is as following: circuits are setup at heat conducting base plate; there is a insulating layer between heat conducting base plate and circuit, and more than one luminescence chips are distributed among circuits; chips through metal wires are connected to circuit, and photic protection layer is covered on the luminescence chips. The heat conducting base plate reduces junction temp, raises efficiency and life time of chip as well as makes more chips possible be arranged on unit area.