192 results about "Indium phosphide" patented technology

The invention belongs to the field of lasers, and discloses a growth method for reducing laser Ith through N grating burying, which subversively adopts an N-type grating structure, uses a built-in P-N junction formed by the N-type grating structure and a subsequent P-type buried layer as a natural and efficient current blocking layer, and structurally eliminates a current leakage path. Afterwards, in the heating stage, trace arsine is introduced to carry out atomic-scale protection on the sensitive grating morphology, at the optimal mass transport temperature, the high mobility characteristic of indium atoms is utilized to carry out shape-preserving filling on grating grooves, flawless preliminary planarization is achieved, and through variable-temperature thickening growth and high-temperature annealing in the pure phosphorus atmosphere, the high-temperature-resistant grating is obtained. And performing quality optimization and defect repair on the buried layer and the key interface. The series of linked steps ensure that the indium phosphide buried layer with flat atomic scale and complete crystal lattice can grow on the fragile N-type grating, and ensure that a high-quality covering layer and an active region grow on the N-type grating.

Aspects disclosed in the detailed description include an impure Indium Phosphide (InP) semiconductor substrate. Related apparatus and methods are also disclosed. In this regard, in some exemplary aspects disclosed herein, a semiconductor substrate comprising a silicon layer and an impure InP layer adjacent to the silicon layer. The impure InP layer may be epitaxially grown on a Silicon (Si) nanoridge base or directly bonded to the silicon layer after being epitaxially grown and cleaved. Utilizing an impure InP layer advantageously provides structural strength to be deployed in a 300 millimeter wafer process while achieving the electrical and thermal characteristic of InP it provides in a semiconductor substrate.

The invention discloses an indium phosphide single crystal growth dynamic thermal field control method based on AI calibration of multiple temperature zones, and relates to the technical field of semiconductor material preparation and artificial intelligence control. According to the method, a multi-temperature-zone thermal field digital twin model is constructed, multi-channel temperature data, heating power data and crystal growth image data in an indium phosphide single crystal growth furnace are collected, and real-time three-dimensional reconstruction of thermal field distribution in the furnace is carried out; with the crystal growth rate, the solid-liquid interface shape and the thermal stress distribution as optimization targets, power adjustment instructions of heaters in all temperature zones are output; an AI calibration module is introduced to correct thermophysical parameters of the digital twin model; deducing a thermal field state at a future moment, compensating a thermal hysteresis effect in advance, and realizing accurate closed-loop control of an indium phosphide single crystal growth process; according to the invention, the problem that the traditional PID control is difficult to cope with nonlinear, strong-coupling and large-lag thermal field change in large-size crystal growth is solved, and the single crystal yield and the lattice quality are remarkably improved.

The invention discloses a silicon-based indium phosphide laser and a preparation method thereof, and relates to the technical field of semiconductor devices, the silicon-based indium phosphide laser comprises a silicon substrate, a composite insulating layer, a Van der Waals buffer layer and an indium phosphide epitaxial structure which are stacked in sequence; the indium phosphide epitaxial structure comprises a first epitaxial structure stacked on the Van der Waals buffer layer and a second epitaxial structure stacked on the first epitaxial structure; the first epitaxial structure at least comprises a lower cladding layer, a lower limiting layer, a lower waveguide layer, a spacing layer, a multi-quantum well active region, an upper limiting layer, an etching stop layer, an upper waveguide layer and an upper cladding layer which are sequentially stacked, a Bragg grating is manufactured in the upper waveguide layer, and the second epitaxial structure comprises a regrowth cladding layer and a contact layer which are sequentially stacked; the Van der Waals buffer layer is a two-dimensional material film, and the problems of lattice mismatch, thermal expansion coefficient mismatch and polarity structure difference of integration of the silicon substrate and the InP epitaxial layer are thoroughly solved from a physical mechanism by introducing the single-layer two-dimensional material Van der Waals buffer layer.

Described herein are optoelectronic devices and methods incorporating strain balanced direct bandgap AlxIn1-xP multiple quantum wells. The described devices are strain balanced in that the net strain between the ordered quantum wells and barriers is low, or in some cases zero. Advantageously, the described devices may be specifically designed for higher efficiency than existing AlxIn1-xP and may be grown on commercially available GaAs substrates.

Disclosed in the present invention are a reaction device for narrow-band luminescence indium phosphide quantum dots, and a method for producing narrow-band luminescence indium phosphide quantum dots using the reaction device. The reaction device comprises a high gravity device and a photothermal device, wherein the high gravity device comprises a housing, an electric motor, a rotating disk, shear packing, a liquid distributor, a reaction chamber, a packing cover, a gas outlet, a liquid outlet and liquid inlets; and the photothermal device comprises a laser heating device, a circuit and water cooling device, a reflective layer and a laser controller. In the present invention, infrared laser is coupled into a high gravity reactor, and solvent media such as water or organic compounds are used to absorb infrared light and convert same into thermal energy to raise the temperature of the high gravity reactor, so as to initiate a nucleation reaction of a reactant precursor in a "micro-droplet reactor", thereby realizing the controllable growth of quantum dots in the micro-droplet reactor; and then nanoparticles of uniform size are finally obtained by means of controlling the laser irradiation and heating duration.

The invention belongs to the technical field of solar cells, and discloses a flexible silicon substrate-indium phosphide solar cell and a preparation method thereof. The flexible silicon-based indium phosphide solar cell comprises a lower electrode, a flexible silicon solar cell, a first transparent conductive layer, a conductive adhesive, a second transparent conductive layer and an indium phosphide solar cell which are sequentially stacked from bottom to top, an antireflection film layer and an upper electrode are arranged on the indium phosphide solar cell; the conductive adhesive is obtained by dispersing polymethyl methacrylate microspheres coated with metal on the surface into an EVA solution. Heterogeneous integration is achieved through the transparent conductive adhesive, the two-end laminated cell is formed, the device is light, thin and flexible, the defects that a traditional four-end laminated cell is rigid, heavy, large in optical loss and the like are overcome, and the solar cell has good performance.

A semiconductor optical device includes: a lower mesa structure extending in a stripe shape and composed of some layers including an active layer; a buried layer configured to bury both sides of the lower mesa structure and made of indium phosphide; and an upper mesa structure extending in a stripe shape and composed of some layers including a bottom layer made of phosphorus-free materials, the bottom layer having a bottom surface protruding from a topmost layer of the lower mesa structure, the bottom surface being in contact with the lower mesa structure and the buried layer.

The application provides a method for evaporating and atomizing corrosion of an indium phosphide wafer, comprising the following steps: A) placing the indium phosphide wafer to be corroded into a rotating disc, and adding a corrosion solution into a corrosion tank; the rotating disc is arranged in a closed space above the corrosion tank, and the closed space and the corrosion tank are connected through a valve channel; the corrosion solution comprises hydrogen peroxide, sulfuric acid, phosphoric acid and hydrochloric acid; B) hot nitrogen gas is introduced into the corrosion tank to evaporate and atomize the corrosion solution, and the valve channel is opened to allow the atomized corrosion solution to enter the closed space above; C) the rotating disc is started to rotate the wafer, and the indium phosphide wafer on the rotating disc is corroded; D) the corroded wafer is taken out and cleaned to obtain the corroded indium phosphide wafer. Compared with the method of liquid phase corrosion in the prior art, the present process has the advantages of higher wafer corrosion amount, simpler operation, higher automation degree and more uniform corrosion compared with the traditional corrosion process.

Provided is an indium phosphide substrate, a method for manufacturing an indium phosphide substrate, and a semiconductor epitaxial wafer, which can suppress the occurrence of contamination of the surface of the indium phosphide substrate caused by residues in the edge portion. An indium phosphide substrate, wherein the indium phosphide substrate has an edge portion including at least a surface having a curvature, and wherein, with respect to the surface roughness of the edge portion, each of the measured values of the root mean square height Sq calculated using a laser microscope and applying an L filter with a cutoff wavelength of 20 μm at a plurality of positions on the entire surface of the edge portion is 0.15 μm or less.

This invention relates to a highly efficient automated splicing system for indium antimonide short crystal rods, belonging to the field of semiconductor material processing technology. Specifically, it relates to a highly efficient bonding and slicing technology for multiple short crystal rods of indium antimonide, indium phosphide, and other materials. The system includes a crystal rod conveying unit, a crystal orientation and size measurement unit, a splicing planning module, a buffer plate selection and adhesive application unit, and a crystal rod posture adjustment and bonding unit. This system achieves full automation from crystal rod loading to long rod assembly unloading. One operator can simultaneously manage three machines, requiring only periodic material replenishment; this reduces labor requirements by more than 80% compared to traditional manual splicing.

A device, method, and hybrid computing architecture for a Symbolic Photonic Logic Gate (SPLG) system that performs data processing primarily in the optical domain. The system comprises a photonic substrate, including silicon-photonics, indium phosphide, or similar optically active materials, patterned with optical waveguides and interferometric structures configured to implement logic operations through controlled optical interference, phase modulation, or non-linear optical effects. The SPLG system is configured to execute Boolean and symbolic logic functions without requiring intermediate optical-to-electrical signal conversion. In operation, information is encoded into one or more optical parameters including phase, polarization, wavelength, or amplitude, and processed within a Symbolic Optical Core optimized for linear algebraic operations such as matrix multiplication and vector transformation. The architecture further comprises an electronic control layer configured to initialize, configure, and monitor the photonic logic elements while allowing the majority of computational operations to occur within the optical domain, thereby reducing electrical interconnect congestion and resistive heating relative to fully electronic processors.

The present invention discloses a reaction device and method for narrow-band luminescent indium phosphide quantum dots. The reaction device comprises a hypergravity device and a photothermal device. The hypergravity device comprises a housing, a motor, a turntable, a shear filler, a liquid distributor, a reaction chamber, a filler cover, a gas outlet, a liquid outlet, and a liquid inlet. The photothermal device comprises a laser heating device, a circuit and a water cooling device, a reflective layer, and a laser controller. The present invention couples an infrared laser into a hypergravity reactor, utilizes a solvent medium such as water or organic matter to absorb the infrared light and convert it into heat energy to increase its temperature, stimulates the nucleation reaction of a reactant precursor in a "micro-droplet reactor", realizes the controllable growth of quantum dots in the micro-droplet reactor, and finally obtains nanoparticles of uniform size by controlling the laser irradiation and heating time.

The invention belongs to the technical field of crystal growth, and provides a growth method of a large-size semi-insulating indium phosphide single crystal. According to the VGF growth method of the indium phosphide single crystal, a thermal field structure is optimized, six temperature zones are set, and the temperature of each temperature zone is controlled; the method comprises the following steps: preparing an indium phosphide polycrystalline column, then charging and doping, respectively placing dopants in at least three axial partitions of the indium phosphide polycrystalline column, regulating the temperature before crystal growth, firstly regulating the temperature of an equal-diameter region, then regulating the temperature of a head seed crystal region, carrying out crystal growth, and respectively controlling the specific growth rates of seeding, shouldering, equal-diameter and ending stages; and finally, annealing to prepare the indium phosphide single crystal with the size greater than or equal to 6.5 inches. According to the invention, the preparation of the large-size semi-insulating indium phosphide single crystal with high quality and high yield is realized.

The invention discloses a bonding structure and a bonding method, the bonding structure comprises a silicon substrate and an epitaxial structure bonded on the silicon substrate, the epitaxial structure comprises an indium phosphide substrate, and an intrinsic indium phosphide layer, a P-type indium phosphide layer, a zinc layer and a zinc oxide layer which are sequentially arranged on the surface of one side, facing the silicon substrate, of the indium phosphide substrate, the zinc oxide layer is bonded on the surface of one side, facing the indium phosphide substrate, of the silicon substrate, and a doped element of the P-type indium phosphide layer is a zinc element. According to the invention, convenient integration of the indium phosphide material and the silicon substrate is realized, and the development of the indium phosphide-based silicon optical device is further promoted.

The present disclosure relates to the technical field of optoelectronics, and in particular to a resonance-enhanced mesa-type photodetector based on a chirped Bragg reflector. The photodetector comprises: a high-reflectance structure on a P-type ohmic contact layer, a P-type epitaxial layer, a graded doping absorption layer, an annular metal electrode on an N-type ohmic contact, an N-type epitaxial layer, a chirped Bragg reflector, and a semi-insulating indium phosphide substrate, which are sequentially formed from top to bottom.

The invention relates to the technical field of semiconductor materials, and particularly discloses an atomization cleaning method for an indium phosphide wafer. The atomization cleaning method comprises the following steps that an indium phosphide wafer rotating at a constant speed is sequentially subjected to atomization cleaning through a first acid solution and deionized water and then subjected to nitrogen purging drying; carrying out atomization cleaning with an alkaline peroxide solution and deionized water, and then carrying out nitrogen purging drying; and finally, carrying out atomization cleaning by using a second acid solution and deionized water, and carrying out nitrogen purging drying to obtain the clean indium phosphide wafer. According to the method, based on an acid-alkali-acid three-step synergistic mechanism, full-spectrum pollutant removal of oxides, organic matters, particles and metal ions is realized; the indium phosphide wafer rotating at a high speed can immediately strip reaction products and waste liquid through centrifugal force, and secondary adsorption is avoided; the technical defects that a traditional RCA wet cleaning process is prone to corroding the wafer, the surface roughness of the wafer is degraded, and secondary pollution is caused are effectively overcome.

The invention discloses a high-speed high-precision frequency modulation continuous wave laser ranging chip, which belongs to the technical field of laser ranging and comprises a laser light source module, an outer resonant cavity linear frequency modulation module, a coherent detection module and a signal processing module. The laser light source module adopts an indium phosphide DFB laser with an optimized multi-quantum well structure to generate narrow-linewidth tunable seed laser; the outer resonant cavity linear frequency modulation module realizes injection locking through a multi-micro-ring cascade resonant structure, suppresses nonlinearity in combination with an FPGA closed-loop correction unit, and outputs a high-linearity frequency modulation signal; the coherent detection module receives and transmits signals through an antenna and completes coherent frequency mixing. And the signal processing module realizes time sequence synchronization based on the correlation function, and calculates the target distance and speed through the frequency modulation continuous wave principle. The chip realizes frequency modulation bandwidth greater than or equal to 1.5 THz, sub-millimeter ranging precision and data acquisition rate greater than or equal to 1000 times / s, solves the contradiction between narrow linewidth and wide tuning, adapts to scenes such as intelligent driving and unmanned aerial vehicles, and gives consideration to integration level and reliability.

The invention relates to a sodium dichloroisocyanurate composite polishing solution capable of improving indium phosphide removal rate and surface quality. The polishing solution is prepared from the following components: nano silicon dioxide with the concentration of 8.0 to 12.0 weight percent, an oxidant with the concentration of 0.8 to 1.1 weight percent, a complexing agent with the concentration of 0.8 to 1.1 weight percent, a surfactant with the concentration of 200 to 500 ppm and the balance of deionized water, and the pH value of the polishing solution system is 8.9-9.1. The oxidizing agent is sodium dichloroisocyanurate; the complexing agent is potassium sorbate; according to the polishing solution, the removal rate and the surface quality of indium phosphide are obviously improved, and harmful gas is not generated to the maximum extent under the alkaline condition.

The utility model discloses a fixing assembly for indium phosphide crystal heating, and relates to the technical field of indium phosphide crystal heating and fixing.The fixing assembly for indium phosphide crystal heating comprises a supporting seat, a placing groove is formed in the supporting seat, the three ends of the placing groove are open, an adjusting assembly is arranged in the placing groove, and the adjusting assembly is connected with the supporting seat. The fixing assemblies are arranged on the two sides of the top end of the supporting seat correspondingly, the moving grooves are formed in the upper surfaces of the two ends of the supporting seat correspondingly, the limiting grooves are formed in the inner walls of the two sides of the moving grooves correspondingly, each adjusting assembly comprises an adjusting frame and a moving part, and the connecting grooves are formed in the surfaces of the two ends of each adjusting frame correspondingly. The moving part is located on one side of the connecting groove, the moving part comprises a connecting base, and a connecting block is arranged at one end of the connecting base, and according to the scheme, the problems that most of existing indium phosphide crystals are directly placed together for heating, accumulation is likely to be caused, and consequently heating is uneven are solved.

The indium phosphide single-crystal substrate has a circular main surface, and the main surface is virtually divided with a square grid at a grid interval of 1 mm. The square grid is composed of a plurality of grid points present along a first direction and a second direction orthogonal to the first direction. A set consisting of dislocation densities measured at the respective grid points has a first whole-surface mean as the mean of the set and a first whole-surface standard deviation as the standard deviation of the set, and each of the dislocation densities is classified as any one of a first level, a second level, and a third level. The grid points each determined to have a dislocation density classified as the second level are present in a region between an outline of a first square region and an outline of a second square region.

The application belongs to the technical field of semiconductor process, and discloses an indium arsenide quantum dot single-photon avalanche diode and a manufacturing method thereof, which comprises a substrate layer, a buffer layer, an N-type indium phosphide doped layer, an intrinsic indium gallium arsenide absorption layer, an N-type indium gallium arsenide phosphorus light-doped gradient layer, an N-type indium phosphide light-doped charge layer, an intrinsic indium arsenide quantum dot avalanche layer and a P-type indium phosphide light-doped contact layer which are sequentially stacked; the quantum dot size of the intrinsic indium arsenide quantum dot avalanche layer ranges from 2 nm to 10 nm. The application can reduce excessive noise, improve the bandwidth of a device and improve the response speed of a diode.

The invention belongs to the technical field of semiconductor materials, and particularly relates to a wax melting reagent and a wax melting method for an indium phosphide substrate and an indium phosphide epitaxial wafer. According to the wax melting reagent used in the wax melting method of the indium phosphide substrate provided by the invention, the fluorocarbon nonionic surfactant in the wax melting reagent is used for promoting the wax melting reagent to quickly spread and permeate into an organic wax layer and an indium phosphide interface; cyclohexanone is used for promoting the wax melting reagent to effectively permeate and swell an organic wax layer including various high-molecular polymers, so that the organic wax layer is relaxed and unwound, the polymer enhanced polishing wax is efficiently and thoroughly removed through the strong polarity of N-methyl pyrrolidone, the risk of metal ion pollution is reduced, and the service life of the polishing wax is prolonged. The effect of removing the pollution on the surface of the indium phosphide substrate is improved; and meanwhile, in the wax melting method, by setting the temperature in the steps of hot dipping stripping and warm dipping rinsing, the wax liquid is prevented from re-condensing on the surface of the substrate, and the effect of removing the surface pollution of the indium phosphide substrate is further improved.

The invention belongs to the technical field of semiconductor materials, and particularly relates to a method for removing metal and organic wax pollution on the surface of a semiconductor substrate. According to the removing method provided by the invention, the polished waxed indium phosphide substrate is firstly subjected to heat treatment in the oxygen-containing atmosphere, so that organic wax on the surface of the indium phosphide substrate is oxidized, decomposed and embrittled due to high temperature and oxygen in the heat treatment process and becomes a state which is easier to remove by a solvent, and then the organic solvent is cooperatively used for cleaning, so that the surface of the indium phosphide substrate is cleaned. Organic wax pollution on the surface of the semiconductor substrate can be effectively removed; meanwhile, a water-based chelating reagent is used for continuously cleaning the substrate, metal impurity ions on the surface of the substrate are strongly complexed through a chelating agent, and metal impurities and residual organic wax pollution are stripped through a non-ionic surface active agent, so that the metal and organic wax pollution on the surface of the semiconductor substrate is efficiently removed, and the clean semiconductor substrate is obtained; the technical problem that in the prior art, the effect of removing metal and organic wax pollution on the surface of a semiconductor substrate is low is solved.

The invention provides a multi-degree-of-freedom cooperative control-based quartz tube and tube cap oxyhydrogen flame automatic seal welding method. The method comprises the following steps of S1, vacuum preparation: fixing a quartz tube loaded with indium phosphide polycrystal materials and a tube cap on a positioning platform for vacuumizing; the three-dimensional coordinates of the quartz tube and the tube cap are obtained through laser scanning, a seven-axis mechanical arm path is generated, and the fitting error is smaller than or equal to 0.05 mm; s3, a preheating stage; s4, a heat sealing stage, wherein the temperature is kept constant after temperature rise, and the circumferential speed of a mechanical arm is 0.8-1.2 rad / s; s5, a slow cooling stage, wherein the temperature is reduced to 700 DEG C, and the moving speed is 8-12 mm / s; and S6, airtightness detection: the standard is less than or equal to 5 * 10 Pa.m / s. The problem of quartz tube and tube cap curved surface welding is solved through four-degree-of-freedom dynamic compensation, thermal field stable control is achieved through gradient gas distribution, the vacuum sealing quality is guaranteed through time sequence interlocking, and the operation reliability is guaranteed through a millisecond-level safety mechanism.

This invention discloses an indium phosphide quantum dot-bismuth tungstate composite material, its preparation method, and its application, relating to the field of photocatalytic materials technology. The preparation method includes the following steps: Indium precursor is added to oleylamine and mixed; the mixture is gradually heated and kept at a constant temperature under nitrogen protection; then, tris(diphenylphosphine) is added at 170-190°C to react and obtain indium phosphide quantum dots; bismuth nitrate is dispersed in water, and hexadecyltrimethylammonium bromide and sodium tungstate are added sequentially, followed by a hydrothermal reaction to obtain bismuth tungstate microflowers; indium phosphide quantum dots and bismuth tungstate microflowers are added to deionized water, mixed evenly, heated to react, cooled to room temperature, washed, and dried to obtain the indium phosphide quantum dot-bismuth tungstate composite material. This invention also discloses the indium phosphide quantum dot-bismuth tungstate composite material prepared by the above method and its application. This composite material has the function of photocatalytic H2O2 production and has significant application value in the treatment of coking wastewater.

The invention discloses a polystyrene-maleic anhydride copolymer-based indium phosphide quantum dot composite film as well as a preparation method and application thereof. The composite film comprises a polystyrene-maleic anhydride copolymer matrix and indium phosphide quantum dots, the indium phosphide quantum dots are uniformly distributed in the polystyrene-maleic anhydride copolymer matrix; the light transmittance of the composite film is greater than or equal to 90%; the tensile strength is greater than or equal to 232 MPa; the elongation is not less than 600%; the average stripping force is greater than or equal to 0.15 N. In the composite film, agglomeration of indium phosphide quantum dots in a film main body material such as an ethylene-vinyl acetate copolymer can be avoided, and the quantum dots are uniformly distributed in the composite film, so that the transmittance of the composite film is improved, the light conversion effect is optimized, and the display brightening effect is achieved.

The invention discloses an efficient indium phosphide chemical mechanical polishing solution, a preparation method and a polishing method, and belongs to the technical field of polishing. The indium phosphide high-efficiency chemical mechanical polishing solution comprises a rough polishing solution and a fine polishing solution, the rough polishing liquid comprises the following components: 2 wt.%-4 wt.% of an oxidizing agent, 8 wt.%-12 wt.% of a silicon dioxide grinding material A, 0.5 wt.%-1.5 wt.% of a dispersing agent and the balance of deionized water; the fine polishing liquid comprises the following components: 7 wt.%-15 wt.% of an oxidizing agent, 6 wt.%-30 wt.% of organic acid, 10 wt.%-30 wt.% of a silicon dioxide abrasive material B, 6 wt.%-15 wt.% of a dispersing agent and the balance of deionized water. The invention relates to an indium phosphide high-efficiency chemical mechanical polishing solution, a preparation method and a polishing method, and solves the problems of low polishing efficiency and poor polishing surface quality of the existing polishing solution on an indium phosphide substrate.

The application discloses an integration method of a lithium niobate-indium phosphide photoelectric integrated device based on a diamond substrate, which directly bonds a polycrystalline diamond substrate with the integrated chip, effectively improves the heat dissipation effect without affecting the original device performance, and solves the heat mismatch problem of lithium niobate, indium phosphide and other materials in the hetero-integration, and the whole preparation process is completed under low-temperature conditions, a heat mismatch balance temporary adhesive layer is introduced, and a low-temperature and long-time annealing treatment is combined, so that the bonding strength is improved, the interface thermal resistance is reduced, and the damage of the thin film material caused by the heat mismatch is reduced or eliminated; the method does not introduce more processes or complex designs except the bonding process, helps to ensure the process consistency, and realizes the transfer of the multi-layer hetero-wafer material and the prepared device layer.

The utility model provides a storage structure for indium phosphide single crystal production, which relates to the technical field of indium phosphide single crystal production, and comprises a bottom plate, a sliding block, a placing piece, an adjusting piece and a sliding column, the whole bottom plate is of a rectangular structure, and pulleys are arranged at the bottom of the bottom plate. The sliding block is arranged in the bottom plate, and the top of the sliding block is of a wedge-shaped structure. The placing piece is arranged at the top of the bottom plate; the two adjusting pieces are arranged in the containing piece, and round holes are formed in the bottoms of the adjusting pieces. The sliding column is arranged in the middle of the containing piece, the top of the sliding column is of a cylindrical structure with the middle protruding, the bottom of the sliding column is of a wedge-shaped structure, and the bottom of the sliding column makes contact with the top of the sliding block. The storage structure for indium phosphide single crystal production solves the problems that when an existing storage structure for indium phosphide single crystal production is used, after storage, transportation is inconvenient, bumping is likely to happen when the storage structure is placed on a transfer trolley, the storage structure is likely to fall off from the transfer trolley, and then use is inconvenient.