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Preparation method of indium phosphide quantum dots

An indium quantum and phosphating technology, which is applied in the field of semiconductor nanomaterial preparation, can solve problems such as difficult to balance the nucleation and growth process of quantum dots, widening of quantum dot size distribution, and affecting quantum dot performance. Simple operation and uniform size distribution

Inactive Publication Date: 2017-08-29
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the high-temperature implantation method is difficult to balance the nucleation and growth process of quantum dots, which broadens the size distribution and half-width of the synthesized quantum dots.
In addition, during the high-temperature synthesis of InP quantum dots, the group III elements on the surface of the seed crystal are easily oxidized to form oxides, which prevent the growth of free monomers on the surface of the seed crystal, thus affecting the performance of quantum dots.

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  • Preparation method of indium phosphide quantum dots
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  • Preparation method of indium phosphide quantum dots

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preparation example Construction

[0026] In order to solve the current problem that it is difficult to prepare indium phosphide quantum dots with uniform size distribution, the invention discloses a method for preparing indium phosphide quantum dots, which includes the following steps: a. preparing a uniform indium precursor solution; b. At the first temperature, phosphine is added to the indium precursor solution to form a mixed system with indium phosphide nanocrystal nuclei, and the first temperature is in the range of 100-130°C; c, the mixed system is heated to The second temperature is maintained for a period of time; d, the mixed system is adjusted to a third temperature, and precursor substances required for synthesizing the shell are added to form indium phosphide quantum dots with shell coating.

[0027] In the present invention, the selection range of the first temperature is 100-130°C, more preferably, 115-125°C. At the reaction temperature, add indium phosphide into the indium precursor solution in...

Embodiment 1

[0044] Indium phosphide quantum dot sample 1 with a fluorescence emission peak of 593 nm was prepared. Specific steps are as follows:

[0045] (1) Preparation of zinc oleate (Zn-OA): add zinc acetate, oleic acid and 1-octadecene in a three-necked flask, heat until dissolved, and pass into N 2 , react for 1h, cool down to room temperature, and obtain a clear and transparent solution of Zn-OA with a concentration of 0.5M;

[0046] (2) Preparation of sulfur-trioctylphosphine (S-TOP): under Ar environment, elemental sulfur and trioctylphosphine were mixed and dissolved to obtain a S-TOP solution with a concentration of 2M;

[0047] (3) Preparation of indium phosphide quantum dots with a core-shell structure: add In(OAc) to a three-necked flask 3 (300mg), Zn(OAc) 2 (100mg), oleic acid (1mL) and 1-octadecene (10mL), heated to 120°C to fully dissolve, and passed through N 2 , keep warm for 120min to obtain a clear and transparent solution. Cool down to 100°C, pass a certain amou...

Embodiment 2

[0056] Indium phosphide quantum dot sample 3 with a fluorescence emission peak of 637 nm was prepared. Specific steps are as follows:

[0057] The preparation steps of the quantum dots are basically the same as in Example 1. After cooling down to 100°C, a larger amount of pH than in Example 1 is introduced. 3 gas to obtain the indium phosphide quantum dots at the required fluorescence emission peak position.

[0058] According to calculation, the quantum yield of the indium phosphide quantum dot sample 3 is 63%.

[0059] image 3 It is the ultraviolet-visible absorption and fluorescence emission spectrogram of the indium phosphide quantum dot sample 3 prepared in embodiment 2, from image 3 It can be seen that the emission peak is 637nm, and the half-maximum width is 65nm.

[0060] By comparing the data in the above examples and comparative examples, it can be found that the technical means of "low temperature nucleation-heating aging-high temperature cladding" of the pres...

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Abstract

The invention provides a preparation method of indium phosphide quantum dots. The preparation method comprises the following steps: firstly mixing an indium precursor, an acid ligand and a non-coordinating solvent and preparing a uniform indium precursor solution; then adding hydrogen phosphide at a temperature of 100-130 DEG C, raising the temperature to a second temperature and keeping for a period of time; finally regulating the solution to a third temperature and adding a precursor substance required by a synthetic shell to obtain the shell-coated indium phosphide quantum dots. The indium phosphide quantum dots with nuclear shell structures are synthesized by adopting the method of low-temperature nucleating, raised temperature-curing and high-temperature shell-coating; the nucleation and growth processes of indium phosphide nano crystalline nucleuses can be controlled at a low temperature, so that the synthesized quantum dots are uniform in size distribution; meanwhile, the risk of surface oxidation of the indium phosphide nano crystalline nucleuses can also be effectively avoided at a low temperature, so that the optical performance of the indium phosphide quantum dots are improved to a certain degree.

Description

technical field [0001] The invention relates to the technical field of semiconductor nanomaterial preparation, in particular to a method for preparing indium phosphide quantum dots. Background technique [0002] After more than ten years of research and development, the application of quantum dots in the fields of flat panel display, thin film flexible display (quantum dot light emitting diode), LED lighting, fluorescent markers and biomedical imaging is becoming more and more mature, especially in the field of flat panel display, quantum dot technology It can bring higher energy efficiency and color performance, while reducing costs, and has become the hottest trend in the high-end TV market. As the basic material at the front end of the industrial chain of the display industry, quantum dots need to have the characteristics of good luminescence performance, high stability, and environmental protection. However, the quantum dot materials currently on the market generally ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B25/08C09K11/70
CPCC01B25/087C01P2002/84C09K11/70
Inventor 张卫王允军
Owner SUZHOU XINGSHUO NANOTECH CO LTD
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