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Chemical vapor deposition process of preparing Sic nanotube

A technology of silicon carbide nanotubes and catalysts, applied in the field of chemical vapor deposition preparation of silicon carbide nanotubes, can solve the problems of high cost of raw carbon nanotubes, difficulty in large-scale production, difficult control of the reaction process, etc., and achieve easy control of the reaction process , easy mass production, low cost effect

Inactive Publication Date: 2006-08-02
NAT UNIV OF DEFENSE TECH
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Problems solved by technology

In addition, the synthesis temperature of this method is high (higher than 1200 ° C), the reaction process is difficult to control, the process equipment is complicated, the cost of raw material carbon nanotubes is high, and it is difficult to realize large-scale production

Method used

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  • Chemical vapor deposition process of preparing Sic nanotube
  • Chemical vapor deposition process of preparing Sic nanotube
  • Chemical vapor deposition process of preparing Sic nanotube

Examples

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Embodiment Construction

[0019] The present invention will be further described below in conjunction with embodiment. However, the examples should not be interpreted as limiting the protection scope of the present invention, and methods equivalent thereto are all within the protection scope of the present invention.

[0020] The steps for preparing SiCNTs in the following examples (using monomethyltrichlorosilane (MTS) as a raw material by CVD method) are as follows: (1) choose a pure graphite sheet as a substrate, wash it with deionized water, dry it, and set aside; ( 2) Using ferrocene as catalyst and thiophene as cocatalyst, prepare catalyst solution, put the dried pure graphite flakes into the solution and soak for 24h, take out and dry naturally, and set aside; (3) 100gMTS is placed in a three-necked flask, Replace the gas in the bottle with high-purity nitrogen; place the graphite substrate in a tube furnace, and replace the gas in the furnace with high-purity nitrogen after vacuuming; after 0.5...

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Abstract

The preparation process of SiC nanotube includes the following steps: 1. cleaning and drying graphite sheet as substrate; 2. soaking the substrate in catalyst solution including catalyst comprising organic compound of Fe, Co, Ni and other metals and co-catalyst comprising organic compound of S; 3. chemically vapor depositing gas source compound comprising organic compound capable of being gasified and containing Si-C bond in the carrier gas comprising N2, H2, NH3 or their mixture and with the molar ratio to the gas source compound of 4.5-7.0 at the temperature of 800-1100 deg.c for 0.8-1.5 hr; and 4. purifying treatment. The present invention has the advantages of: low preparation temperature, easily controlled reaction process, simple technological apparatus, low cost, high yield, high product purity, homogeneous product size distribution and easy use in large scale production.

Description

technical field [0001] The invention relates to a method for preparing silicon carbide nanotubes, in particular to a method for preparing silicon carbide nanotubes by chemical vapor deposition. Background technique [0002] As a quasi-one-dimensional material, carbon nanotubes (CNTs) are known as the "dream" material of the 21st century due to their unique nanostructure and excellent mechanical, electrical, and optical properties. Since their discovery, they have been favored by scientists all over the world widespread attention. However, due to the chemical properties of carbon itself, carbon nanotubes cannot be used in high temperature and harsh environments. For example, in an oxidizing environment, its long-term use temperature should not exceed 600 ° C; when it is used in self-assembly, biological, and chemical sensor materials, it must be chemically modified appropriately, but due to the high chemical stability of carbon nanotubes The compos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 谢征芳陶德良薛金根王军
Owner NAT UNIV OF DEFENSE TECH
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