12 results about "Metalloorganic Compounds" patented technology

The Invention relates to a method Method for making a ruthenium catalyst comprising the steps of - Providing an aromatic dithiol substituted on adjacent aromatic carbon atoms with thiol groups, wherein in a first step an aromatic compound substituted with two leaving groups on adjacent aromatic carbon atoms are reacted with alkali trithiocarbonate to obtain an aromatic benzodithiole-thione, which in a subsequent step is reacted / hydrolysed with a base; - providing a zinc dithiolate compound by reacting the aromatic dithiol with a zinc carboxylate in an organic solvent; Reacting the zinc dithiolate compound with a ruthenium compound wherein X1 and X2 are, independently of each other, are anionic ligands and are the same or different; L and L2 are, independently of each other, neutral electron donor ligands and are the same or different; Ar is an aromatic group which may be substituted and that can be bridged with L, if L is an alkoxy group; - Obtaining a ruthenium catalyst of formula 4 or 4a, wherein R1 to R4 are, independently of each other, are selected from hydrogen, halogen, alkyl, aryl, or R.1 with R3, R3 with R4 or R2 with R4 are forming together an aliphatic or aromatic ring.

This disclosure relates to methods and components for a cyclic deposition process for depositing Group IV to Group VI transition metals on a substrate. The method includes providing a substrate in a reactor chamber, introducing a gaseous organometallic compound as a metal precursor and a gaseous Lewis acid reactant to react with the metal precursor, thereby forming a transition metal material on the substrate. The method may include introducing a gaseous co-reactant. This disclosure also relates to semiconductor processing components for performing the methods according to this disclosure.

The application discloses a kind of metal organic compound energy prediction methods based on deep learning, belong to compound property prediction technical field.It includes the following steps: obtaining the molecular structure information of metal organic compound and calculating electronic structure characteristics, constructs molecular graph and encodes generation geometry feature vector;Global fusion features are output through multimodal feature fusion model;Total energy value and molecular structure are predicted through multi-task prediction network;The mean and variance of the total energy value are obtained by statistical prediction, and the energy prediction value and confidence interval are obtained.The application constructs molecular graph and extracts geometric features, and simultaneously utilizes cross attention and gate fusion network to realize the deep interactive fusion of geometric and electronic structure features, solving the problem of inaccurate feature representation of metal organic compounds and poor multimodal feature fusion effect of traditional methods.

This invention discloses the application of a non-metallic organic compound in the catalytic synthesis of polyester, the polyester itself, and its preparation method. The non-metallic organic compound acts as a polycondensation catalyst and copolymer monomer, catalyzing its own polycondensation reaction with polyester esters (such as BHET). The non-metallic organic compound is a hydroxyl-containing benzimidazole derivative. It is obtained by esterification or transesterification of a benzimidazole compound with a diol, followed by neutralization and purification of the esterified solution. This compound can replace traditional metal-based polycondensation catalysts, catalyzing its own melt polycondensation with polyester raw material monomers to prepare a metal-catalyst-free copolyester, avoiding the adverse effects of residual metal catalysts.

The application discloses an organic detection method of a metal organic compound, and comprises the following steps: dissolving a sample to be detected in a deuterated solvent to obtain a solution to be detected; gradually reducing the temperature of the solution to be detected from a starting temperature to a final temperature, collecting the sample to be detected at different temperatures 1 H-NMR spectrum; comparing H-NMR spectra at different temperatures 1 H-NMR spectrum, and if an impurity peak originally overlapping with a main peak appears, the sample to be detected contains the impurity. The application separates the nuclear magnetic resonance signal peaks overlapping at normal temperature by gradient reduction of the temperature, realizes qualitative and quantitative analysis of trace impurities, and solves the problem of insufficient detection sensitivity of trace impurities in the prior art.

Forming an oxide superconducting film includes a step of laminating a superconducting layer of an oxide superconducting material. The step of laminating the superconducting layer includes a pyrolyzed film forming step, a polycrystallization step, and a sintering heat treatment step. The pyrolyzed film forming step includes a coating film forming step and a pyrolyzing heat treatment step. In the coating film forming step, a solution of a metal organic compound is applied to form a coating film. In the pyrolyzing heat treatment step, the coating film is heat-treated to thermally decompose an organic component of the metal organic compound so as to form a pyrolyzed film. In the polycrystallization step, the pyrolyzed film is heat-treated to form a polycrystal layer containing polycrystals of the oxide superconducting material. In the sintering heat treatment step, the polycrystal layer is heat-treated to orient the polycrystals so as to form the superconducting layer.

The current disclosure relates to methods and assemblies for a cyclic deposition process for depositing a group four to six transition metal on a substrate. The method comprises providing a substrate in a reactor chamber, introducing a metalorganic compound as a metal precursor in a vapor phase, and a Lewis acid reactant in a vapor phase to react with the metal precursor, forming the material of the transition metal on the substrate. The method may include introducing a co-reactant in a vapor phase. The disclosure further relates to semiconductor processing assemblies for executing the methods according to the disclosure.

The application discloses a method for growing GaN single crystal thin film on a gallium lanthanum silicate crystal substrate based on a MOCVD method, and is characterized by comprising the following steps: (1) putting the cleaned gallium lanthanum silicate crystal substrate into a metal organic chemical vapor deposition chamber, introducing a mixed gas of H2 and NH3 into a reaction chamber, heating to 1000-1200 DEG C, and keeping the pressure in the reaction chamber at 100-300 mbar to high-temperature treat the substrate for 3-8 min; (2) taking trimethyl gallium and NH3 as a gas source, and growing a low-temperature GaN nucleation layer on the gallium lanthanum silicate crystal substrate at a temperature of 400-600 DEG C; and (3) heating the reaction chamber to 900-1200 DEG C to grow a high-temperature GaN single crystal thin film on the low-temperature GaN nucleation layer, and the method has the advantages that the lattice mismatch and the thermal expansion coefficient mismatch are both low, and the GaN single crystal thin film has high quality.

The application belongs to the technical field of semiconductor photoelectric device manufacturing, and particularly relates to an epitaxial growth method of a P-type Bragg reflection layer, a vertical cavity surface emitting laser and an epitaxial growth method thereof. The P-type Bragg reflection layer provided by the application is grown by a metal organic chemical vapor deposition-in-situ reflection monitoring method, comprises a plurality of layer unit structures arranged in layers, and each layer unit structure comprises, from bottom to top, a carbon-doped GaAs layer, a first carbon-doped AlGaAs layer, a delta-doped layer and a second carbon-doped AlGaAs layer. The delta-doped layer is located at an optical standing wave node, and the delta-doped layer is a third carbon-doped AlGaAs layer. The P-type Bragg reflection layer provided by the application can significantly reduce the resistance of a P-DBR device while maintaining high reflectivity, and the optimal balance of photoelectric performance can be achieved through accurate control of the doping position.

The present disclosure provides an epitaxial structure and a preparation method thereof, and a semiconductor device. The preparation method of the epitaxial structure comprises the following steps: providing a semiconductor substrate; epitaxially growing a magnetic layer of a gyromagnetic ferrite on the semiconductor substrate by a metal organic chemical vapor deposition process to form an epitaxial structure; wherein a magnetic field is applied in a reaction chamber during the epitaxial growth of the magnetic layer of the gyromagnetic ferrite, and the magnetic field has a magnetic field component parallel to the surface of the semiconductor substrate, which can affect the reaction and crystallization process of reaction gas atoms in the reaction chamber, so as to change the crystallization orientation, induce the generation of in-plane uniaxial magnetic anisotropy on the non-textured semiconductor substrate, and grow the magnetic layer of the gyromagnetic ferrite with strong crystallographic texture, thereby realizing the mass production of the magnetic layer of the gyromagnetic ferrite on the semiconductor substrate by the MOCVD process.

The application provides a metal sintering solder paste and a preparation method and application thereof, and the metal sintering solder paste comprises metal powder, low-temperature decomposable metal organic compound, organic microspheres and an organic carrier. The metal sintering solder paste is prepared by compounding micron metal particles and nanometer metal particles, so that the metal fillers in the paste form a continuous multi-size distribution state, the original close packing degree of the metal fillers in the paste is improved, the low-temperature decomposable metal organic compound generates new high-activity metal nanoparticles in situ during the sintering process, the original close packing degree of the metal fillers is further improved, the sintering between the metal particles is promoted, a dense sintered body is formed, the introduction of the organic microspheres reduces the Young's modulus of the whole sintered body, the sintered body exhibits good cold and hot impact resistance, the metal sintering solder paste provided by the application is not prone to interface delamination and sintered body cracking under high and low temperature impact, and good service reliability is exhibited.