74 results about "Metalloorganic Compounds" patented technology

The invention discloses a high-efficiency catalyst and a preparation and application method thereof, and relates to the technical field of nano carbon material preparation, the high-efficiency catalyst comprises the following components: an organic metal compound containing iron, cobalt and nickel, a refractory metal organic compound, a cocatalyst and a functional auxiliary agent, the catalyst is used for preparing the carbon nanotube by a floating chemical vapor deposition method, a high-temperature plasma CVD method or a plasma arc method, all components of the catalyst are uniformly mixed through melting granulation, the defect that the proportion is difficult to accurately control due to independent feeding is avoided, meanwhile, powder feeding can be cracked and evaporated in the subsequent carbon nanotube preparation process, and the carbon nanotube preparation efficiency is improved. The catalyst with higher concentration is obtained, and the preparation efficiency of the single-walled carbon nanotube is remarkably improved.

The invention discloses a preparation method of high-catalytic-activity ethylene glycol antimony applied to PET production, and relates to the technical field of ethylene glycol antimony. The preparation method comprises the following steps: uniformly mixing and stirring ethylene glycol and antimony trioxide; adding a crystal structure regulating agent, a surfactant and a synergistic catalyst; heating, stirring and reacting to generate liquid ethylene glycol antimony; filtering to obtain clear liquid ethylene glycol antimony; crystallizing, cooling and separating out crystals; separating out crystals and drying to obtain a finished product of ethylene glycol antimony; the crystal structure regulating agent is selected from at least one of metal organic compounds or metal salts; the surfactant is selected from at least one of a nonionic surfactant or a silane coupling agent; the synergistic catalyst is selected from phosphorus-containing organic compounds. Through combined use of the crystal structure regulating agent, the surfactant and the synergistic catalyst, the catalytic activity, the selectivity and the dispersity of ethylene glycol antimony are improved, and the stability and the reusability of the ethylene glycol antimony are improved.

This invention relates to the technical field of organometallic compound production, and discloses a method and apparatus for synthesizing a homogeneous organic molybdenum-containing compound and its application. The method is implemented in a system containing a first reaction unit and a second reaction unit. The first reaction unit comprises at least two batch reactors connected in series. The batch reactors are cylindrical structures containing an inner cylinder and an outer cylinder. The inner cylinder and the outer cylinder are kept in communication so that the material in the inner cylinder can overflow into the outer cylinder. The method includes: introducing a molybdenum-containing material and an organic ligand material into reaction unit 1 for a first reaction to obtain gas phase I and liquid phase I; introducing the organic ligand material and the liquid phase I into the second reaction unit for a second reaction to obtain gas phase II and the homogeneous organic molybdenum-containing compound. The method provided by this invention features high reaction mass transfer efficiency and high conversion rate.

The invention provides a patterning composition, a compound, a patterning method, an electronic device and application. The patterning composition includes a compound represented by the following formula: (RaM) b (L1) x (L2) y (L3) z. The patterning composition comprises the metal organic compound coordinated by the specific mixed ligand, so that in the patterning process, the structure can obviously improve the hydrolytic stability of the patterning composition during the patterning process, and the exposure dose is reduced.

The application provides a circuit board high-density protective film surface treatment method and a circuit board. The circuit board high-density protective film surface treatment method comprises the following steps: obtaining a circuit board; placing the circuit board into a modified OSP solution for soaking, wherein the modified OSP solution comprises an alkyl amide benzimidazole composition, a transition metal salt, an organic acid solvent, a chelating agent and water; using a cooling circulation spraying device to spray the soaked circuit board; and drying the sprayed circuit board to obtain the circuit board. By the method, the heat resistance of a traditional organic compound film is improved, the stability of the metal-organic compound film itself is improved, a high-density metal-organic compound film is obtained to improve the protection of the copper surface, the wastewater discharge amount is reduced, energy saving and emission reduction are achieved, and the water recycling rate is improved.

In one example, an organic light-emitting diode contains an emission material layer comprising a metal-organic compound and various types of host materials. Furthermore, a display device using organic light-emitting diodes is discussed.

The Invention relates to a method Method for making a ruthenium catalyst comprising the steps of - Providing an aromatic dithiol substituted on adjacent aromatic carbon atoms with thiol groups, wherein in a first step an aromatic compound substituted with two leaving groups on adjacent aromatic carbon atoms are reacted with alkali trithiocarbonate to obtain an aromatic benzodithiole-thione, which in a subsequent step is reacted / hydrolysed with a base; - providing a zinc dithiolate compound by reacting the aromatic dithiol with a zinc carboxylate in an organic solvent; Reacting the zinc dithiolate compound with a ruthenium compound wherein X1 and X2 are, independently of each other, are anionic ligands and are the same or different; L and L2 are, independently of each other, neutral electron donor ligands and are the same or different; Ar is an aromatic group which may be substituted and that can be bridged with L, if L is an alkoxy group; - Obtaining a ruthenium catalyst of formula 4 or 4a, wherein R1 to R4 are, independently of each other, are selected from hydrogen, halogen, alkyl, aryl, or R.1 with R3, R3 with R4 or R2 with R4 are forming together an aliphatic or aromatic ring.

The invention discloses a preparation method of tetra (dimethylamino) hafnium, and belongs to the technical field of preparation of IVB group metal organic compounds. The preparation method comprises the following steps: S1, carrying out primary rectification on a tetra (dimethylamino) hafnium crude product, and collecting a primary main fraction; s2, dissolving the primary main fraction, and recrystallizing to obtain a crystal; and S3, dissolving the crystal, carrying out secondary rectification, and collecting a secondary main fraction. The tetra (dimethylamino) hafnium crude product is derived from waste liquid in the production process of cyclopentadienyl tris (dimethylamino) hafnium, and the crude product contains less than or equal to 8.0 ppm of Fe and less than or equal to 1.0 ppm of Ti; according to the method, 6N-grade (99.9999% or above) ultra-high-purity recovery of the TDMAHf product in the CpHf synthesis waste liquid is achieved by optimizing key parameters such as rectification and recrystallization parameters, and the recovered product completely meets the strict requirements of high-end fields such as semiconductor film deposition on metal precursors; the preparation method is short in process period and high in treatment efficiency, does not introduce other impurities, and can realize industrial application.

The application discloses a synthesis method of a foamed nickel loaded iron-nickel-phosphorus C3N4 electrocatalytic material, and specifically comprises the following steps: S1, potassium ferricyanide, citric acid and C3N4 are weighed respectively and added into deionized water, and magnetic stirring is performed through a magnetic stirrer until complete dissolution; S2, 2cm*2cm foamed nickel is cut, surface impurities are washed away, and the treated foamed nickel is dried in a vacuum oven at 70 DEG C for 6h, and the dried foamed nickel is placed in the solution prepared in S1, and the reactor is sealed; S3, the foamed nickel in S2 is dried in a vacuum oven at 70 DEG C for 12h, is placed in the upstream of a porcelain boat, 450mg-550mg sodium hypophosphite is weighed and placed in the downstream of the porcelain boat, the porcelain boat is placed in the middle position of a tube furnace, and the foamed nickel is subjected to phosphating reaction in an argon atmosphere, the reaction temperature is controlled to be 345-355 DEG C, the reaction time is controlled to be 115-125min, and the foamed nickel loaded iron-nickel-phosphorus / C3N4 electrocatalytic material is obtained after the reaction is completed. The foamed nickel surface participates in the formation of a metal organic compound, so that the performance of the material is improved, and the service life of the material is prolonged.

According to the preparation method, a nitrogen source and an ammonia source are taken as reaction substrates, a metal organic compound is taken as an auxiliary agent, and guanidine carbonate is obtained through reaction. The preparation method comprises the following steps: by taking a metal organic compound MFM-303 (Al) as an auxiliary agent, under the induction of carboxyl and hydroxyl in a pore channel of the MFM-303 (Al), adsorbing and storing ammonia gas released by heating and decomposing an ammonia source or ammonia gas of the ammonia source in the pore channel, and then reacting with a nitrogen source cyanamide, urea or dicyandiamide to obtain guanidine carbonate; high-temperature and high-pressure reaction conditions are not needed, and meanwhile, the use of a large amount of ammonia water in the traditional process is abandoned, so that the industrial production safety is high; the method has the advantages of mild reaction conditions, few side reactions and high product yield, and is beneficial to industrial large-scale production.

The invention belongs to the technical field of semiconductor photoelectric device manufacturing, and particularly relates to an epitaxial growth method of a P-type Bragg reflection layer, a vertical cavity surface emitting laser and an epitaxial growth method of the vertical cavity surface emitting laser. The P-type Bragg reflection layer provided by the invention is grown by adopting a metal organic compound chemical vapor deposition-in-situ reflection monitoring method, and comprises multiple layers of unit structures which are arranged in a laminated manner, each layer of unit structure sequentially comprises a carbon-doped GaAs layer, a first carbon-doped AlGaAs layer, a delta-doped layer and a second carbon-doped AlGaAs layer from bottom to top, the delta-doped layer is located at an optical standing wave node, and the second carbon-doped AlGaAs layer is located at an optical standing wave node. And the delta-doped layer is a third carbon-doped AlGaAs layer. According to the P-type Bragg reflection layer provided by the invention, the resistance of a P-DBR device can be remarkably reduced while high reflectivity is maintained, and the optimal balance of photoelectric properties is achieved through accurate control of a doping position.

The application discloses a preparation method of a ketone compound, which comprises the following steps: taking a carboxylic acid as a raw material, taking an alkyne amide compound as an activating reagent to react to obtain an alpha-acyloxy enamide compound, and then coupling the alpha-acyloxy enamide compound with a metal organic compound to obtain the target ketone compound. The ketone compound synthesis method provided by the application has wide application range, simple operation and fast reaction rate. It is worth noting that the reaction can also be used for C-terminal modification of an amino acid, and provides a new efficient method for synthesizing ketone compounds.

The invention relates to the technical field of metal material processing, in particular to a vacuum passivation treatment device and method for low-oxygen niobium powder, and aims to solve the problems that the oxygen control precision of an existing low-oxygen niobium powder passivation process is low, the oxygen content increase rate exceeds the standard due to the fact that the protective layer binding force is weak, and matching devices are insufficient in synergism. The method comprises the following steps: pre-filling low-oxygen niobium powder in an inert atmosphere, carrying out high-vacuum heating to T1 (150-250 DEG C), degassing and activating, introducing metal organic compound vapor to form an alloy transition layer, carrying out pulse oxygen introduction-rapid vacuumizing to realize dynamic micro-oxidation circulation, heating to T2 (300-450 DEG C), and alternately introducing nitriding / carbonizing / silicifying gas to form a nano laminated layer, and cooling and discharging under a protective atmosphere (optional fluorine-containing gas surface modification). The surface of the prepared niobium powder is of an alloy transition layer-initial oxide layer-nanometer lamination composite structure, and the oxygen content increase range is smaller than 200 ppm after the niobium powder is exposed for 120 hours in the environment with the temperature being 40 DEG C and the relative humidity being 75%. The matching device comprises a vacuum reaction chamber, a branch gas source subsystem (inertia / oxygen / nitridation, metal organic and carbonization / silicification), a gas alternating control module and a central control system, can automatically and synergistically complete the whole process, overcomes the defects in the prior art, and is suitable for industrial production.

The invention discloses a method for enhancing coagulation by using an organic-inorganic composite biomass-based coagulant aid, and belongs to the field of water treatment. The invention aims to solve the problems of low density of active functional groups, small size of formed floc, poor strength, high possibility of hydraulic disturbance and difficulty in sedimentation of the coagulant aid. The method comprises: 1, preparing a reaction product; 2, preparing an organic-inorganic composite biomass-based coagulant aid; and 3, enhancing coagulation by using an organic-inorganic composite biomass-based coagulant aid. The stable amorphous titanium dioxide / natural polysaccharide composite coagulant aid is obtained by regulating and controlling the acting speed of a hydrolysate of a metal organic compound and anionic natural polysaccharide through a solvent system; the prepared organic-inorganic composite biomass-based coagulant aid has the advantages of green raw materials and green preparation conditions, a large number of active functional groups are introduced into the high-dispersion amorphous metal oxide, and meanwhile, the floc strength can be effectively improved; based on the characteristics, the method can be applied to the field of enhanced coagulation in water treatment.

To provide a method for producing platinum group metals from organic compounds of platinum group metals with high yield, and a method for efficiently recovering platinum group metals from organic compounds of platinum group metals.SOLUTION: There is provided a method for producing platinum group metals comprising: heating an organic compound of a platinum group metal in the presence of oxygen to T2°C or higher, which satisfies the following formula (1), where T1°C is the lowest peak temperature among the peak temperatures in the range of 300°C to 600°C when the organic compound of a platinum group metal is measured by DSC in the atmosphere at a heating rate of 5°C / min. T2=T1-30...(1).SELECTED DRAWING: Figure 1

The present invention provides a gold complex exhibiting aggregation-induced emission properties, as well as its preparation method and application, belonging to the field of organometallic compounds. The structural formula of the gold complex described herein is as follows: #imgabs0#. The gold complex prepared by the present invention effectively inhibits fungal growth at low concentrations, exhibiting strong antifungal activity with minimal toxicity to normal cells. It exhibits excellent biocompatibility and enables fluorescent visualization of fungal infections, providing strong diagnostic support.

The invention discloses a preparation method and application of a catalytic char-forming magnesium borate whisker flame retardant and a thermosetting flame-retardant polymer of the catalytic char-forming magnesium borate whisker flame retardant, the special structure of the flame retardant is that a functional layer with atomic-scale catalytic char-forming flame-retardant capability is constructed on the surface of magnesium borate, and the preparation process comprises the following steps: S1, activating and modifying the surface of a magnesium borate whisker; s2, complexing the modified magnesium borate whiskers with metal ions; s3, loading the magnesium borate whisker with a complex structure containing a metal organic compound; the key point of the invention is that a host-guest structure with atomic-scale catalytic char forming ability is loaded on the surface of the magnesium borate whisker by using chemical bonds, so that the magnesium borate whisker polymer composite material is endowed with excellent char forming ability and flame retardant property. The magnesium borate whisker flame retardant capable of catalyzing charring can be applied to the field of flame retardance of thermosetting polymers, the adding amount is 2-4 wt%, the charring capacity of a thermosetting polymer composite material is remarkably improved, the UL-94 grade reaches the V-0 grade, and the limit oxygen index is increased to 30-34%.

This invention relates to the field of catalyst technology for the hydrogenation of carbon dioxide to methanol, and discloses a modified metal-organic framework material and its preparation method and application. The method includes: (1) reacting a first inorganic metal compound, an aromatic organic acid, an organic acid, and a first organic solvent, followed by solid-liquid separation to obtain product I; (2) mixing product I, a second organic solvent, and a second inorganic metal compound, followed by solid-liquid separation to obtain product II; (3) mixing product II, a second organic solvent, and a metal-organic compound, followed by solid-liquid separation to obtain product III; (4) reacting product III, a Lewis acid compound, a second organic solvent, and a modifier; wherein the first inorganic metal compound and the second inorganic metal compound are different, the aromatic organic acid and the organic acid are different, and the modifier is selected from at least one of haloalkanes, alcohols, and alkenes. The material prepared by this method exhibits a methanol selectivity greater than 95% and a CO2 conversion rate greater than 25%.

The present invention provides a platinum-based alloy slurry for alumina co-firing and a heating electrode. The platinum-based alloy slurry for alumina co-firing contains the following components in parts by weight: a) 65%-80% of a main conductive phase, wherein the main conductive phase is monodisperse spherical platinum-palladium alloy powder, and the particle size of the platinum-palladium alloy powder ranges from 200 to 300 nm; b) 1%-5% of an auxiliary conductive phase, wherein the auxiliary conductive phase is a metal organic compound; c) 0.5%-1% of a sintering aid, wherein the sintering aid is γ-Al2O3 powder or a mixed powder of γ-Al2O3 and α-Al2O3; and d) 15%-30% of an organic carrier.

The invention provides platinum-based alloy slurry for aluminum oxide co-firing and a heating electrode, the platinum-based alloy slurry for aluminum oxide co-firing comprises the following components in parts by weight: a) 65%-80% of a main conductive phase, the main conductive phase is monodisperse spherical platinum-palladium alloy powder, and the particle size range of the platinum-palladium alloy powder is 200-300 nm; the conductive material comprises the following components in percentage by weight: (a) 1%-5% of a conductive phase which is a metal organic compound, (b) 1%-5% of an auxiliary conductive phase which is a metal organic compound, (c) 0.5%-1% of a sintering aid which is gamma-Al2O3 powder or mixed powder of gamma-Al2O3 and alpha-Al2O3, and (d) 15%-30% of an organic carrier.

The invention relates to the technical field of semiconductor material preparation, in particular to a preparation method of a niobium-containing metal organic compound. The method comprises the following steps: S1, adding an n-butyllithium solution into a reactor, cooling, then adding tert-butylamine, heating to room temperature, and stirring for reaction to obtain a first intermediate solution; s2, cooling the first intermediate solution, then adding niobium pentachloride, heating to room temperature, and stirring for reaction to obtain a second intermediate solution; s3, cooling the second intermediate solution, introducing HNR1R2, and stirring for reaction to obtain a product mixed solution; and S4, sequentially carrying out solid-liquid separation and reduced pressure distillation on the product mixed solution to obtain the niobium-containing metal organic compound. The method is simple in step and short in reaction time, meanwhile, non-toxic alkane n-hexane is used, harm to the human body and the environment is reduced, n-hexane can be repeatedly used, no waste is generated, and the method is suitable for industrial large-scale production.

The invention discloses metal organic compound chemical vapor deposition equipment, and relates to the technical field of semiconductor manufacturing equipment. The metal organic compound chemical vapor deposition equipment comprises a multi-stage barrier system at least composed of a first barrier part, a second barrier part and a third barrier part, and a multi-stage gas supply system at least composed of a main gas supply port, a first auxiliary gas supply port and a second auxiliary gas supply port, through multi-stage cooperation of the multi-stage blocking system and the multi-stage gas supply system on the whole flow path in the reaction chamber, the airflow control capability in the reaction chamber environment is effectively improved, and meanwhile, the thermal field stability of the reaction environment is also improved, so that the quality and efficiency of the reaction process are greatly improved.

This disclosure relates to methods and components for a cyclic deposition process for depositing Group IV to Group VI transition metals on a substrate. The method includes providing a substrate in a reactor chamber, introducing a gaseous organometallic compound as a metal precursor and a gaseous Lewis acid reactant to react with the metal precursor, thereby forming a transition metal material on the substrate. The method may include introducing a gaseous co-reactant. This disclosure also relates to semiconductor processing components for performing the methods according to this disclosure.

The invention provides a high-voltage lithium cobalt oxide positive electrode material, a preparation method, a positive plate and a lithium ion battery. The preparation method comprises the following steps: mixing a cobalt source, a lithium source and an additive, and performing solid-phase sintering to prepare the high-voltage lithium cobalt oxide positive electrode material, the additive comprises a transition metal organic compound. In the preparation process of the high-voltage lithium cobalt oxide positive electrode material, the transition metal organic compound is added as an additive, so that the convective reaction effect of the raw material powder in the solid-phase sintering process is enhanced, and the phenomenon that residual lithium carbonate is randomly retained due to insufficient reaction of the raw materials is avoided; the problem that residual lithium in a local area of the surface of the prepared high-voltage lithium cobalt oxide positive electrode material is enriched to cause black spots is solved, and the uniformity and the electrochemical performance of the high-voltage lithium cobalt oxide positive electrode material are effectively improved.

The present invention relates to the field of semiconductor device technology, and in particular to a non-polar a-plane gallium nitride epitaxial structure and a preparation method thereof. After providing an r-plane sapphire substrate and few-layer graphene, the few-layer graphene is transferred to the growth surface of the substrate, and the few-layer graphene is bonded to the growth surface to prepare an epitaxial substrate. The area of ​​wrinkles on the surface of the few-layer graphene in the epitaxial substrate accounts for less than or equal to 1%, and the maximum thickness is any value between 0.3nm and 0.7nm. Metal organic compound chemical vapor deposition is performed on the surface of the epitaxial substrate to obtain a non-polar a-plane gallium nitride epitaxial structure. The few-layer graphene reduces the lattice mismatch problem between the substrate and the gallium nitride epitaxial layer obtained by epitaxy, ensures that the electrostatic potential of the substrate can act on the epitaxial layer through the few-layer graphene, and also reduces the local stress or gaps caused by the wrinkles, which helps to improve the quality of the epitaxial layer.

The application discloses a kind of metal organic compound energy prediction methods based on deep learning, belong to compound property prediction technical field.It includes the following steps: obtaining the molecular structure information of metal organic compound and calculating electronic structure characteristics, constructs molecular graph and encodes generation geometry feature vector;Global fusion features are output through multimodal feature fusion model;Total energy value and molecular structure are predicted through multi-task prediction network;The mean and variance of the total energy value are obtained by statistical prediction, and the energy prediction value and confidence interval are obtained.The application constructs molecular graph and extracts geometric features, and simultaneously utilizes cross attention and gate fusion network to realize the deep interactive fusion of geometric and electronic structure features, solving the problem of inaccurate feature representation of metal organic compounds and poor multimodal feature fusion effect of traditional methods.

The invention discloses a method for preparing an iron-nickel loaded nanotube carbon material through plasma heating vapor deposition. According to the method, an iron-nickel bimetal organic compound is used as a precursor, and controllable growth of the nanotube is realized under the low-temperature condition of 300-600 DEG C through plasma-assisted chemical vapor deposition. The method specifically comprises the steps that a precursor solution with the iron-nickel molar ratio being 1: 1-1: 3 is prepared, after a substrate is cleaned through plasma, vapor deposition is carried out in the CH4 / H2 / Ar atmosphere, meanwhile, NH3 / N2 is introduced to achieve in-situ nitrogen doping, and finally annealing treatment is carried out at the temperature of 500-800 DEG C. The obtained material has the pipe diameter of 5-20 nm and the length of 1-10 [mu] m, iron-nickel nanoparticles (3-10 nm) are uniformly dispersed, the nitrogen doping amount is 5-10 at% (pyridine nitrogen accounts for 50-70%), and the specific surface area is 500-1200 m < 2 > / g. The method breaks through the limitation of a traditional high-temperature process, and the prepared material shows excellent performance.

The invention relates to a method for producing a MOF, wherein a MOF is a structured metal-organic compound comprising a bi- or tri-dimensional porous network consisting of inorganic entities that are connected by polydentate chelating ligands bonded to multiple metal centers; the polydentate chelating ligands being selected in particular from the group comprising C5-C24 heteroaromatic ligands and aromatic ligands, comprising at least one carboxylic acid function, preferably benzyl or naphthyl di-, tri- or tetracarboxylate, and the aromatic or heteroaromatic ligands optionally bearing, on at least one aromatic ring, a group selected from among —NH2, —OH, —CH3, —NO2, —CF3, —COOH, —SO3H, —SH, —OCH3.

The disclosure describes a method of stabilizing a carbon supported noble metal catalyst by selective metal oxide deposition on the carbon support of the catalyst by a vapor deposition process. The method includes the flowing steps: a) Providing a carbon supported noble metal catalyst, b) Forming a blocking layer over an exposed surface of the noble metal on the catalyst, c) Exposing the catalyst to a gas containing metal organic compounds to absorb the compounds selectively to the carbon support, d) Exposing the catalyst to an oxidant to form a metal oxide on the catalyst carbon support, e) Repeating steps c) and d) sequentially for one to ten of cycles, preferably one to five cycles, f) Removing the blocking layer from the catalyst to re-expose the noble metal catalyst surface.

The application discloses a preparation method of tetra (dimethylamine) hafnium and belongs to the technical field of group IVB metal organic compound preparation. The preparation method comprises the following steps: S1, once rectification of tetra (dimethylamine) hafnium crude product, and collection of the first main distillate; S2, dissolution of the first main distillate, and recrystallization to obtain crystals; S3, dissolution of the crystals for secondary rectification, and collection of the second main distillate. The tetra (dimethylamine) hafnium crude product is derived from waste liquid in a production process of cyclopentadienyl tris (dimethylamine) hafnium, and the crude product contains ≤8.0 ppm of Fe and ≤1.0 ppm of Ti; the application realizes 6N level (more than 99.9999%) ultra-high purity recovery of TDMAHf product in CpHf synthesis waste liquid by optimizing key parameters such as rectification and recrystallization parameters, the recovered product fully meets the strict requirements of high-end fields such as semiconductor thin film deposition on metal precursors, the preparation method has the advantages of short process cycle, high processing efficiency and no introduction of other impurities, and can realize industrial application.