The invention relates to the semiconductor photoelectric material field, and provides a preparing method for transparent conductive oxide film. The method includes the following steps: step one, obtaining a sol solution of zinc salt or indium salt and doped metal salt, wherein, viscosity of the sol ranges from 15m Pa.s to 20 m Pa.s, concentration of zinc or indium in the zinc salt or the indium salt ranges from 0.1 mol/L to 1 mol/L, the mole ratio of zinc and the doped metal salt is between 0.001 and 0.03, and the mole ratio of indium and the doped metal salt is between 0.05 and 0.15; step two, immersing media into the sol solution and allowing the mixture to stand for 1s to 30s, pulling the media out of the sol solution at a speed of 1 cm/min to 300 cm/min, maintaining the media for 0.5 min to 30 min at a temperature in a range of 80 DEG C to 300 DEG C, and cooling the media; step three, repeating step two till the thickness of the film on the media achieves the required thickness, and obtaining the transparent conductive oxide film. The transparent conductive oxide film prepared through the method has the advantages of being high in rate of finished products, capable of preparing film with large areas, high in material using ratio, and suitable for mass production.