187results about How to "Good film uniformity" patented technology

Provided is a batch-type Atomic Layer Deposition (ALD) apparatus for performing ALD processing collectively for a plurality of substrates, leading to an improved throughput, and achieving perfect uniformity of ALD on the substrates. The batch-type ALD apparatus includes: a chamber that can be kept in a vacuum state; a substrate support member, disposed in the chamber, supporting a plurality of substrates to be stacked one onto another with a predetermined pitch; a substrate movement device moving the substrate support member upward or downward; a gas spray device continuously spraying a gas in a direction parallel to the extending direction of each of the substrates stacked in the substrate support member; and a gas discharge device, disposed in an opposite side of the chamber to the gas spray device, sucking and evacuating the gas sprayed from the gas spray device.

A method and an apparatus for growing a thin film onto a substrate by the ALD process. The apparatus comprises a reaction chamber into which the substrate can be disposed; a plurality of inlet channels communicating with said reaction chamber, said inlet channels being suited for feeding the reactants employed in a thin-film growth process in the form of vapor-phase pulses into said reaction chamber; at least one outlet channel communicating with said reaction chamber, said outlet channel being suited for the outflow of reaction products and excess amounts of reactants from said reaction space; and a pre-reaction chamber arranged immediately upstream of the reaction chamber, said pre-reaction chamber forming a first reaction zone, in which the reactants of successive vapor-phase pulses can be reacted with each other in the vapor phase to form a solid product, whereas said reaction chamber forming a second reaction zone can be operated under conditions conducive to ALD growth of a thin film.

An apparatus and method for depositing film on a substrate includes a plurality of conduits that allow by-product and reactant gases to flow past the edge of a substrate. The apparatus and process of the present invention has several advantages for enhanced chamber performance, particularly for micro-volume chambers using pulsed deposition layer processes.

A substrate supporting structure (50) for semiconductor processing, comprising a mounting table (51) for placing a processed substrate (W) disposed in a processing chamber (20), wherein temperature control spaces (507) for storing the fluid used as a heat exchange medium are formed in the mounting table (51), a conductive transmission path (502) is disposed to lead a high frequency power to the mounting table (51), and flow channels (505, 506) feeding or discharging the heat exchange medium fluid to or from the temperature control spaces (507) are formed in the transmission path (502).

A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

The invention relates generally to processes for producing electrically conductive noble metal thin films on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.

A system and method for enhancing the plasma etch process uniformity in an ionized PVD semiconductor wafer processing system is provided. The system and method controls chamber conditions so as to produce highly uniform processing for a deposition-etch process sequence and yielding improved coverage capabilities of high aspect ratio (HAR) features when the deposition and etch steps are performed within same processing chamber. Plasma is generated and maintained by an inductively coupled plasma (ICP) source. In the deposition portions of the process, metal or other coating material is produced from a target of a PVD source. A segmented peripheral electrode surrounds the wafer at a distance from its outer edge. RF induced bias is applied to the electrode, cycling around the segment so as to subject each to a duty cycle controlled by a processor. The tendency of the etching or sputtering of the wafer surface that occurs with deposition to produce a radially selective coverage of the wafer, particularly of inside features and the flat field of the wafer, are offset by the bias electrode. A segmented biased-ring electrode is controlled to provide conditions for azimuthal improvement of etch rate and overall etch rate uniformity across the wafer.

A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the carbon-containing material layer with silicon, and depositing the carbon-containing material layer at low temperature. In one aspect, improved light transmittance of the carbon-containing material layer at all wavelengths of a visible light spectrum is obtained. In addition, a method for depositing an encapsulating layer is provided for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. The encapsulating layer may include one or more barrier layer material layers and one or more amorphous carbon material layers. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO2 is added to TMCTS as a carrier gas, or CO2 or a mixture of CO2 and O2 are added to the PECVD reactor.

A method utilizing a plasma etching machine which comprises a process chamber defining an interior region and including a bottom wall having an aperture and a block disposed in the aperture and including a longitudinally extending bore. A shaft extends through the bore and includes a spider push rod extending longitudinally therethrough. An internally cooled chuck is coupled to the shaft and disposed in the interior region and cooperates with the shaft to define a chamber. A spider is disposed in the chamber and is coupled to the push rod. A lift mechanism is coupled to the shaft and the push rod so that the spider pushes up on a wafer in response to actuation of the lift mechanism. A wafer clamping mechanism is coupled to the push rod if a mechanical clamp is used. In the case of electrostatic clamp the bias applied to the chuck is coupled with the use of a rotational roller to allow the bias to be applied to the chuck for the duration of the etch process. A RF source is needed for ionization of the gas. If the plasma etching machine has RF power applied through the bottom, then a rotational roller is used for this as well and must be isolated from the electrostatic voltage used to clamp the wafer.

Provided is high purity nickel or nickel alloy target for magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior in plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.

The present invention relates to a method of manufacturing a ferrite rod. The method comprises etching cavities into two semiconductor substrates and depositing ferrite layers into the cavities. The semiconductor substrates are attached to each other such that the ferriote layers form a ferrite rod. The present invention employs conventional photolithography and bulk isotropic micromachining of semiconductor wafers to precisely and repeatably form a template or mould, into which magnetic material can be deposited to form a Faraday rotation or phase-shifting element.

The invention provides an oily solid releasing agent which is prepared from the following components in parts by weight: 80-85 parts of base material, 0.8-1.2 parts of emulsifier, 5-10 parts of film-forming assistant, 5-15 parts of additive, 5-15 parts of moisture absorber and 1-5 parts of antioxidant. The base material contains animal oil, vegetable oil, mineral oil and a soaping agent. The additive is a compounded additive containing high-carbon hydrocarbon, alcohol and alkali, wherein the high-carbon hydrocarbon is paraffin; the additive accounts for 5% of the base material. The invention also relates to a preparation method of the releasing agent.

Method and system for forming one or more predetermined patterns on a substrate for making a photovoltaic device. The method includes aligning at least a first droplet source with a substrate, dispensing one or more first droplets associated with one or more first materials from the first droplet source, and forming at least a first pattern of one or more second materials on the substrate by at least the first droplet source. Additionally, the method includes providing a first light beam incident on at least the first pattern, obtaining a first signal associated with the first pattern in response to the first light beam, processing information associated with the first signal, and determining one or more first characteristics of the first pattern based on at least information associated with the first signal.

The invention relates to the semiconductor photoelectric material field, and provides a preparing method for transparent conductive oxide film. The method includes the following steps: step one, obtaining a sol solution of zinc salt or indium salt and doped metal salt, wherein, viscosity of the sol ranges from 15m Pa.s to 20 m Pa.s, concentration of zinc or indium in the zinc salt or the indium salt ranges from 0.1 mol/L to 1 mol/L, the mole ratio of zinc and the doped metal salt is between 0.001 and 0.03, and the mole ratio of indium and the doped metal salt is between 0.05 and 0.15; step two, immersing media into the sol solution and allowing the mixture to stand for 1s to 30s, pulling the media out of the sol solution at a speed of 1 cm/min to 300 cm/min, maintaining the media for 0.5 min to 30 min at a temperature in a range of 80 DEG C to 300 DEG C, and cooling the media; step three, repeating step two till the thickness of the film on the media achieves the required thickness, and obtaining the transparent conductive oxide film. The transparent conductive oxide film prepared through the method has the advantages of being high in rate of finished products, capable of preparing film with large areas, high in material using ratio, and suitable for mass production.

Disclosed is an organic light-emitting display substrate, including a substrate and a pixel defining layer on the substrate which includes a plurality of dams crisscrossing in a display area of the substrate to define a plurality of pixel units and define the boundary of the display area, wherein the pixel defining layer further includes a groove arranged on a top surface of each dam, the grooves at least define one frame-shaped area, at least one pixel unit is arranged in each frame-shaped area, and the grooves are used for accommodating a solvent when forming an organic light-emitting element by inkjet printing. Also disclosed is a manufacturing method of an organic light-emitting display substrate and a display device. The present invention can improve the film forming effect of a film layer formed on the substrate, so that the brightness of a display image of the display device is more uniform.

This invention relates to a magnet control sputtering coating device of a rotary magnetic field plane target including a chip tray, a target base, a target material and a vacuum cavity, among which, the tray, the target base and the material are in the vacuum cavity, the tray is above the base and the material, the material is installed on the base characterizing in also including a magnetic steel group and a rotation motor, among which, the group is composed of a base plate and magnetic steels, more than one magnetic steels are set on the base eccentrically, the entire group is under the place close to the base, the rotation motor is connected with the center of the base via a driving shaft to drive rotation of the group.

The invention discloses a static spraying powder paint and preparing technology for electromagnetic wire and enameled wire, which comprises the following parts: 60-88% resin, 7-15% solidifier, 1-5% dye, 0-20% filler, 2-6% adjuvant. The preparing method comprises the following steps: blending the materials together; fusing to squeeze; cooling to indoor temperature; grinding into piece shaped material; separating the grinded powder into less than 160 order semi-product; demagnetizing to obtain the product.