The application discloses a growth method for reducing pit defects on a
silicon carbide epitaxial surface, and after epitaxial growth is completed, the flow of gas floating of a base is increased, the temperature in a
reaction chamber is increased, the pressure in the
reaction chamber is reduced, and the flow of
hydrogen is increased, and then an
etching stage is entered; in the
etching stage,
hydrogen chloride gas is continuously fed, including at least one feeding period and a pause period after the feeding period; by using the
thermal instability of SiC at high temperature / low pressure, H2 / HCl is used to cooperatively etch the
system to realize efficient
decomposition, the
etching rate is increased, the generation of sub-damage and
dislocation is reduced, the thickness of the removed epitaxial layer can be accurately controlled, the pit defects on the surface of the epitaxial layer are reduced, and the
crystallization quality of the epitaxial layer is maintained, so that the preparation requirements of subsequent power devices are met.