9820results about "Drying solid materials with heat" patented technology

A heating apparatus for heating a target object W is provided with a plurality of heating light sources, including LED elements for applying heating light having a wavelength within a range from 360 to 520 nm to the object. Thus, a temperature of only the shallow surface of the object, such as a semiconductor wafer, is increased / reduced at a high speed in uniform temperature distribution, irrespective of the film type.

A disc-type unit 10 adjusts temperature of a control face 14 by means of a heater 12 and coolant, with a hollow plate 11 to which the heater 12 is secured, a cavity 13 formed in the hollow plate 11 and a piping 20 for supplying the coolant to the cavity 13, the piping 20 opening in the cavity 13, and the coolant being jetted to a portion to which the heater 12 is secured or a portion in proximity thereto and which shows high temperature rise when energizing the heater 12.

An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (7), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (1), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film (7) on the substrate (1), a method comprises forming a low-crystallization semiconductor thin-film (7A) on the substrate (1), and subsequently heating and cooling this low-crystallization semiconductor thin-film (7A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film (7) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.

A reactor chamber is positioned between a top array of LED heat lamps and a bottom array of LED heat lamps. The LED heat lamps forming the top and bottom arrays are individually or controllable in groups such that power output along each array of LED heat lamps can dynamically differ. The LED lamps can be controlled in response to, for example, feedback from chamber sensors, a desired temperature profile, and a failed LED lamp. In this way, the methods and systems described herein can dynamically compensate for operational characteristics of the reactor chamber. In one configuration, the LED heat lamps are arranged in a rectangular pattern. In some configurations, the LED heat lamps are arranged in a circular or a concentric pattern.

A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.

A thermal processing system has a processing vessel 4, a support post 30 stood on the bottom wall of the processing vessel 4, and a support table 32 internally provided with a heating means 38 and supported on the support post 30. A workpiece W is placed on the upper surface of the support table 32 and is subjected to a predetermined thermal process. The upper, the side and the lower surface of the support table 32 are covered with heat-resistant covering members 72, 74 and 76 to prevent the thermal diffusion of metal atoms causative of contamination from the support table 32. thus, various types of contamination, such as metal and organic contamination, can be prevented.

A vaporizer delivery system for use in semiconductor manufacturing processes including a plurality of vertically stacked containers for holding a vaporizable source material. Each of the vertically stacked containers includes a plurality of vented protuberances extending into the interior of the each stacked container thereby providing channels for passage of a carrier gas between adjacent vertically stacked containers.

A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.