331 results about "First Fill" patented technology

An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

The invention relates to a method and a device for applying for a flowable material, especially a particulate material, in individual superimposed layers across a support (50), the flowable material being first filled from a stationary feed station (10) into a storage container (24) of an application device. In the application device (30), which travels back and forth across the support, the flowable material is distributed inside the storage container across the entire length of the device and is then metered through a slot into a metering shaft in such a manner that the filling level in the metering shaft remains constant during application of the flowable material from the metering shaft onto the support.

A semiconductor device is formed in on a semiconductor substrate starting with a first step, which is to form a wide trench and a narrow trench in the substrate. Then form a first electrode in the narrow trench by depositing a first fill material of a first conductivity type over the device to fill the wide trench partially and to fill the narrow trench completely. Etch back the first fill material until completion of removal thereof from the wide trench. Form a second electrode in the wide trench by filling the wide trench with a second fill material of an opposite conductivity type. Anneal to drive dopant both from the first fill material of the first electrode into a first outdiffusion region in the substrate about the periphery of the narrow trench and from the second fill material of the second electrode into a second outdiffusion region in the substrate about the periphery of the wide trench.

A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening.

An automated spread trading terminal receives from a user a selection of a spread trade indicative of a set of trading contracts and transmits to an electronic trading exchange a first set of messages including an order message relating to the user selection such that an initial set of more working orders are rendered operative. The terminal receives from the electronic trading exchange a first fill confirmation message confirming at least partial completion of a first working order, and in response transmits to the electronic trading exchanges both second and third sets of messages such that a completing set of working orders are rendered operative and additional working orders corresponding to the trading contracts are rendered operative, the third set of messages being transmitted before the set of working orders is completed.

Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a multilayer metal fill may be used to fill narrow openings formed in an interlayer dielectric layer. One illustrative method disclosed herein includes forming an opening in a dielectric material layer of a semiconductor device formed above a semiconductor substrate, the opening having sidewalls and a bottom surface. The method also includes forming a first layer of first fill material above the semiconductor device by forming the first layer inside the opening and at least above the sidewalls and the bottom surface of the opening. Furthermore, the method includes performing a first angled etching process to at least partially remove the first layer of first fill material from above the semiconductor device by at least partially removing a first portion of the first layer proximate an inlet of the opening without removing a second portion of the first layer proximate the bottom of said opening, and forming a second layer of second fill material above the semiconductor device by forming the second layer inside the opening and above the first layer.

An apparatus and method are provided for formulating and aseptically filling liquid products. A first liquid source includes at least one first liquid component; a second liquid source includes at least one second liquid component; and a container includes a body defining an empty, sterile storage chamber therein that is sealed with respect to ambient atmosphere. The container is introduced into a sterile filling chamber. A first filling member coupled in fluid communication with the first liquid source is placed in fluid communication with the storage chamber of the container located in the sterile filling chamber, and the first liquid component is aseptically introduced through the first filling member and into the storage chamber. A second filling member coupled in fluid communication with the second liquid source is placed in fluid communication with the storage chamber of the container located in the sterile filling chamber, and the second liquid component is aseptically introduced through the second filling member and into the storage chamber and, in turn, the first and second liquid components are combined into a liquid product formulation within the sterile chamber of the container. The first and second filling members are withdrawn from fluid communication with the storage chamber of the container located within the sterile filling chamber, and the filled storage chamber is sealed with respect to ambient atmosphere to hermetically seal the liquid product formulation within the storage chamber of the container.

An apparatus and method are provided for formulating and aseptically filling liquid products. A first liquid source includes at least one first liquid component; a second liquid source includes at least one second liquid component; and a container includes a body defining an empty, sterile storage chamber therein that is sealed with respect to ambient atmosphere. The container is introduced into a sterile filling chamber. A first filling member coupled in fluid communication with the first liquid source is placed in fluid communication with the storage chamber of the container located in the sterile filling chamber, and the first liquid component is aseptically introduced through the first filling member and into the storage chamber. A second filling member coupled in fluid communication with the second liquid source is placed in fluid communication with the storage chamber of the container located in the sterile filling chamber, and the second liquid component is aseptically introduced through the second filling member and into the storage chamber and, in turn, the first and second liquid components are combined into a liquid product formulation within the sterile chamber of the container. The first and second filling members are withdrawn from fluid communication with the storage chamber of the container located within the sterile filling chamber, and the filled storage chamber is sealed with respect to ambient atmosphere to hermetically seal the liquid product formulation within the storage chamber of the container.

A split-gate flash memory cell having a three-dimensional source capable of three-dimensional coupling with the floating gate of the cell, as well as a method of forming the same are provided. This is accomplished by first forming an isolation trench, lining it with a conformal oxide, then filling with an isolation oxide and then etching the latter to form a three-dimensional coupling region in the upper portion of the trench. A floating gate is next formed by first filling the three-dimensional region of the trench with polysilicon and etching it. The control gate is formed over the floating gate with an intervening inter-poly oxide. The floating gate forms legs extending into the three-dimensional coupling region of the trench thereby providing a three-dimensional coupling with the source which also assumes a three-dimensional region. The leg or the side-wall of the floating gate forming the third dimension provides the extra area through which coupling between the source and the floating gate is increased. In this manner, a higher coupling ratio is achieved without an increase in the cell size while at the same time alleviating the punchthrough and junction break-down of source region by sharing gate voltage along the side-wall.

An adjustable pouch machine comprises a vertical sealer module forms transverse seals between two plies of a pouch web to partially define a plurality of pouches. Rollers selectively tension and relax the web on the vertically oriented wheel, allowing them to drop away from heated lands on emergency and cycle stops. A filler wheel has a plurality of adjustable gripper units mounted directly thereon for transporting independent separate pouches cut from the pouch web. An adjustable knife is selectively provided with changeable knife hub sets to handle a variety of pouch sizes where a filler wheel alternately first fills and seals pouches in a train. Gear linkage accommodates variation in distance between hubs of different sets. Various embodiments, apparatus and methods are described.

The invention discloses high-temperature self-gelation and baking-resistant cake stuffing pre-mix powder and preparation and application thereof. The cake stuffing pre-mix powder comprises the following components: 40-50 percent pre-gelatinized starch, 12-15 percent methyl cellulose, 1-12 percent xanthan gum, 20-25 percent sorbitol powder, 8-15 percent powdered sugar and 3-5 percent corn starch. The cake stuffing is in a half-solidification state and has a certain viscosity when being stirred with the pre-mix powder; the situation that a feeding head leaks due to the good liquidity of paste is avoided when the paste is filled in a paste filling machine; meanwhile, the viscosity degree can meet the requirements of normal extrusion of the paste filling machine, and the normal production efficiency is not affected; during the baking, the half-solidification stuffing paste can be automatically solidified into a solid state, the overflowing boiling phenomena of the stuffing can be reduced,a cavity can not be formed in the cake, and the organization and appearance of the cake can not be affected; and the water in the baked stuffing can not transfer to the cake embryo, so that the watercontent in the cake embryo can not increase to affect the guarantee period of the cake. According to the invention, the cake paste is first filled in the cake stuffing, and then the high-temperature baking step is carried out, so that the guarantee period risks of the cake are greatly reduced.

The sandbag for use in constructing retaining walls having a vegetation-covered wall face. The sandbag contains soil mixed with seeds as a first fill material at one end of the bag, and the remainder of the bag is filled with a cheaper fill material such as sand or gravel. The sandbags are arranged in a sandbag wall such that the ends of the bags having the soil and seed mixture forms at least part of the outer face of the wall.

A nonvolatile memory device of the present invention comprises a substrate (1), first wires (3), first filling constituents (5) filled into first through-holes (4), respectively, second wires (11) which cross the first wires (3) perpendicularly to the first wires (3), respectively, each of the second wires (11) including a plurality of layers including a resistance variable layer (6) of each of first resistance variable elements, a conductive layer (7) and a resistance variable layer (8) of each of second resistance variable elements which are stacked together in this order, second filling constituents (14) filled into second through-holes (13), respectively, and third wires (15), and the conductive layer (7) of the second wires (11) serves as the electrodes of the first resistance variable elements (9) and the electrodes of the second resistance variable elements (10).

The invention discloses a personalized film recommendation method and system based on feature augmentation. The necessity and feasibility that the personalized recommendation system is transferred to a cloud calculation platform are discoursed by analyzing the problems brought by mass data to the existing personalized recommendation system, and by combining a mixed recommendation model adopting feature augmentation, the method comprises the steps that an original extremely-sparse user item rating matrix is filled for the first time through a collaborative filtering algorithm based on items to generate a pseudo two-dimensional table, then the pseudo two-dimensional table is further filled through a collaborative filtering algorithm based on the user, and lastly the defects of strict object attribute matching are avoided through conversion of quantitative knowledge and qualitative knowledge of a cloud module. According to the method, all rating data of the user is fully utilized, the calculation efficiency is greatly improved and calculation speed is greatly increased through parallel calculation of cloud calculation, therefore, the better experience is provided for the user, and the advantages of an enterprise in competition are achieved.

A method includes storing architectural state data associated with a processing unit in a cache memory using an allocate without fill mode. A system includes a processing unit, a cache memory, and a cache controller. The cache controller is to receive architectural state data associated with the processing unit and store at least a first portion of the architectural state data in the cache memory using a first fill mode responsive to a first value of a fill mode flag and store at least a second portion of the architectural state data in the cache memory using a second fill mode responsive to a second value of a fill mode flag, wherein the first fill mode differs from the second fill mode with respect to whether previous values of the architectural state data are retrieved prior to storing the first or second portions in the cache memory.

A kind of fire control water band it includes a rubber plastic pipe, a tubular skeleton and a coat; the manufacturing method of fire control water band is that: a. the longitude and the latitude line interlace to form the tubular skeleton; b. mix the material of making the rubber plastic pipe as following: polyvinyl chloride, stearic acid cadmium, butyl rubber, di-n-fatty oil, sterric acid calcium zinc, light calcium carbonate powder, barium stearate; c. heat the mixed rubber plastic pipe material then rack the heated rubber plastic pipe material into the rubber plastic pipe after that the rubber plastic pipe becomes coiling after cooling; d. make the coiling rubber plastic pipe gumming and the gumming layer at the outside wall of rubber plastic pipe is the coat and then make the rubber plastic pipe after gumming through into the tubular skeleton then curing it. At the time of curing first fill air into the rubber plastic pipe let the rubber plastic pipe coincidence with the tubular skeleton then fill water vapor into the rubber plastic pipe and then dry it at last pack it into production; the invention has low cost and high productive efficiency.

A method for void free filling with in-situ doped amorphous silicon of a deep trench structure is provided in which a first fill is carried out in at a temperature, pressure and dopant to silane ratio such that film deposition occurs from the bottom of the trench upwards. By way of this first fill, step coverages well in excess 100% are achieved. In the second fill step, deposition is carried out under changed conditions so as to reduce the impact of dopant on deposition rate, whereby trench fill is completed at a deposition rate which exceeds the deposition rate of the first fill. In an application of this method to the formation of deep trench capacitor structures, the intermediate steps further including the capping of the void free filled trench with a thick layer of amorphous silicon, planarization of the wafer thereafter, followed by a thermal anneal to re-distribute the dopant within the filled trench. Thereafter, additional steps can be performed to complete the formation of the capacitor structure.

A semiconductor device includes a first trench and a second trench, a liner pattern along a portion of side surfaces and along bottom surfaces of the first and the second trenches, respectively, a work function metal in the first and the second trenches and on the liner pattern, respectively, a first barrier metal in the first trench and on the work function metal, and having a first thickness, a second barrier metal in the second trench and on the work function metal, and having a second thickness thicker than the first thickness, and a first fill metal on the first barrier metal.

A method and apparatus for encapsulating a ring-shaped member, such as a wound coil of wire, a wound metal ribbon, or a metal composite material. The ring-shaped member is mounted upon a mandrel. The mandrel and the mounted ring-shaped member are positioned in a first mold. A thermoplastic material is injection molded peripherally about a first inner void between the mandrel and the ring-shaped member and a first outer void between the first mold and the ring-shaped member. The mandrel is moved with respect to the ring-shaped member. The mandrel and the re-mounted ring-shaped member are positioned in a second mold. The thermoplastic material is injection molded into a second inner void between the mandrel and the ring-shaped member and within a second outer void between the second mold and the ring-shaped member. The second fill of the thermoplastic material joins with the first fill to fully encapsulate the ring-shaped member. The encapsulated ring-shaped member can then be annealed or heat treated to stress relieve any undesired stress or tension within the ring-shaped member.