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Growing method and growing device for indium phosphide single crystal

A growth method and indium phosphide technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of reducing the dislocation density of the indium phosphide single crystal, high risk, and large amount of red phosphorus, etc. The effect of long service life, reduced risk and simplified equipment structure

Active Publication Date: 2015-09-16
威科赛乐微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method adds sulfur as a dopant to reduce the dislocation density of indium phosphide single crystal, and this method uses a large amount of red phosphorus, and the excess phosphorus after crystal growth needs to be burned, which is extremely dangerous

Method used

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  • Growing method and growing device for indium phosphide single crystal

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] use figure 1 In the growth device shown, the size of the pressure-resistant chamber 1 is 200mm in inner diameter; the insulation chamber 2 is a mullite insulation cotton insulation chamber with an inner diameter of 150mm and a thickness of 20mm; the insulation chamber cover 21 has a thickness of 20mm; the heater 3 has a rated power of 10kW The first crucible 4 is a quartz crucible with an inner diameter of 100 mm and a thickness of 5 mm; the second crucible 5 is a PBN crucible (pyrolytic boron nitride crucible) with an inner diameter (the diameter of the crucible after the crucible shoulders are finished) of 80 mm and a thickness of 5 mm. 5mm; the base 6 is a quartz base, which fits closely with the bottom of the second crucible 5 .

[0071] Place the quartz base 6 at the center of the bottom of the quartz crucible 4 , and place the pBN crucible 5 on the quartz base 6 . Make the dislocation density less than 2000cm -2 The direction indium phosphide single crystal see...

Embodiment 2

[0075] use figure 1 In the growth device shown, the pressure chamber 1 has an inner diameter of 250mm; the heat preservation chamber 2 is a mullite insulation cotton heat preservation chamber with an inner diameter of 200mm and a thickness of 20mm; the heat preservation chamber cover 21 has a thickness of 20mm; the heater 3 has a rated power of 15kW The first crucible 4 is a quartz crucible with an inner diameter of 150 mm and a thickness of 5 mm; the second crucible 5 is a PBN crucible (pyrolytic boron nitride crucible), and an inner diameter (the diameter of the crucible after the crucible puts the shoulders) is 110 mm. The thickness is 5mm; the base 6 is a quartz base, which closely fits with the bottom of the second crucible 5 .

[0076] Place the quartz base 6 at the center of the bottom of the quartz crucible 4 , and place the pBN crucible 5 on the quartz base 6 . Make the dislocation density less than 2000cm -2 The indium phosphide single crystal seed crystal in the ...

Embodiment 3

[0080] use figure 1 In the growth device shown, the pressure-resistant cavity 1 has an inner diameter of 300mm; the thermal insulation cavity 2 is a mullite thermal insulation cotton thermal insulation cavity with an inner diameter of 250mm and a thickness of 20mm; the thermal insulation cavity cover 21 has a thickness of 20mm; the heater 3 has a rated power of 20kW The first crucible 4 is a quartz crucible with an inner diameter of 200 mm and a thickness of 5 mm; the second crucible 5 is a PBN crucible (pyrolytic boron nitride crucible) with an inner diameter (the diameter of the crucible after the crucible shoulders are finished) of 160 mm and a thickness of 5 mm. 5mm; the base 6 is a quartz base, which fits closely with the bottom of the second crucible 5 .

[0081] Place the quartz base 6 at the center of the bottom of the quartz crucible 4 , and place the pBN crucible 5 on the quartz base 6 . Make the dislocation density less than 2000cm -2 The direction indium phosphi...

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Abstract

The invention provides a growing method for an indium phosphide single crystal. The method comprises the following steps: using a vertical gradient freeze method for heating indium phosphide seed, indium phosphide polycrystal, diboron trioxide and red phosphorus, and growing crystals to obtain the indium phosphide single crystal, wherein the red phosphorus takes up 0.05-0.1% of the total mass of the indium phosphide polycrystal, the diboron trioxide and the red phosphorus. By the provided growing method, the indium phosphide single crystal with substantially lower dislocation density can be obtained without adding dopant such as ferrum or sulfur, thereby simplifying the technology and saving the cost; moreover, the few red phosphorus (only one tenth of the dosage of the red phosphorus in the prior art) is used in the preparation method, thereby reducing the danger during the production. It is shown by experiments that the average dislocation density of the indium phosphide single crystal obtained by the provided growing method is 2000-4000 / cm2, with the local dislocation density being less than 500 / cm2. The invention further provides a growing device of the indium phosphide single crystal.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and in particular relates to a growth method and a growth device of an indium phosphide single crystal. Background technique [0002] Indium phosphide (InP) is the earliest prepared III-V compound and one of the most important III-V semiconductor materials. At present, with the rapid development of optical fiber communication, high-speed electronic devices, high-efficiency solar cells and laser diodes, a series of superior characteristics of InP crystals can be brought into play, which has attracted more and more attention. [0003] At present, the growth methods of indium phosphide mainly include the LEC method and the VGF method. The LEC method is also called the liquid-sealed Czochralski method. This method has high equipment costs, high crystal stress, high dislocation density, and complex crystal growth process, which is not conducive to growing high-quality and large-sized single c...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/40
Inventor 狄聚青朱刘胡丹
Owner 威科赛乐微电子股份有限公司
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