The invention discloses a rapid synthesis method of an indium phosphide polycrystalline material, which comprises the following steps of: (I) performing surface cleaning treatment on indium; (II) placing a multi-tubular quartz phosphorus bubble with phosphorus into a phosphorus source furnace; (III) placing the pre-designed thermal insulation system, heater, crucible with indium, phosphorus source furnace and seed crystal and B2O3 into a high-pressure single-crystal furnace hearth; (IV) vacuumizing the inside of the furnace and filling high-purity argon; (V) heating to vaporize phosphorus in the phosphorus bubble and injecting into indium melt, and reacting to generate indium phosphide; and (VI) growing crystal. The multi-tubular quartz phosphorus bubble comprises a quartz phosphorus container, at least two quartz phosphorus bubble tubes and a quartz cover. By adopting a multi-tubular quartz phosphorus bubble, the method disclosed by the invention realizes a rapid multi-tubular phosphorus injection synthesis technology, solves the problems of long synthesis time, non-uniform melt proportioning, impurity pollution and the like in the original technology, realizes rapid, efficient and high-purity synthesis of the indium phosphide material, and performs InP single crystal growth more easily.