The invention provides a thin-film
lithium niobate modulator based on a stacked double-layer capacitive
electrode, and belongs to the technical field of thin-film
lithium niobate electro-optical modulators. The modulator sequentially comprises a
silicon substrate layer, a
silicon dioxide lower cladding, a
lithium niobate
waveguide layer, a
ridge-shaped optical
waveguide layer, a
silicon dioxide thin cover layer, a thin accumulation type double-layer capacitive
electrode structure, a thick ground-
signal-ground traveling wave
electrode and a
silicon dioxide upper cladding from bottom to top, wherein the
ridge-shaped optical
waveguide layer, the
silicon dioxide thin cover layer, the thin accumulation type double-layer capacitive electrode structure, the thick ground-
signal-ground traveling wave electrode and the
silicon dioxide upper cladding are formed by
etching the upper surface of the
lithium niobate layer. The ground-
signal-ground traveling wave electrode is composed of a first ground transmission electrode, a signal transmission electrode and a second ground transmission electrode. The stacked double-layer capacitive electrode structure comprises a periodic
metal electrode with a stacked structure in a top view and a stepped
metal electrode in a side view. The thin film
lithium niobate modulator of the stacked double-layer capacitive electrode can realize
refractive index matching, better
impedance matching, low
microwave loss and ultra-large electro-optical bandwidth.