Method for manufacturing double diffusion type optical avalanche diode with incident light on back surface by adopting epitaxial equipment

A double diffusion, avalanche tube technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of PN junction interface depression, inability to achieve doping, slow diffusion rate, etc., to reduce series resistance, suppress surface electric field, avoid absorption effect
CN101950775AActive Publication Date: 2011-01-19WUHAN HUAGONG GENUINE OPTICS TECH
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Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
WUHAN HUAGONG GENUINE OPTICS TECH
Publication Date
2011-01-19

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Abstract

The invention relates to a method for manufacturing a double diffusion type optical avalanche diode with incident light on a back surface by adopting epitaxial equipment. MOCVD epitaxial equipment is used for carrying out epitaxial treatment once on an avalanche photodiode on an indium phosphide substrate; a double diffusion method of the MOCVD epitaxial equipment is used for doping; a sputtering method is used for manufacturing a P-surface electrode; the substrate is thinned and polished; a wet corrosion method is used for manufacturing a light incidence window and an anti-reflection layer; the sputtering method is used for manufacturing a N-surface electrode; and the N-surface electrode is alloyed. By using the double diffusion method, in the diffusion process, the invention realizes gradient doping of different regions and different concentration by controlling the flow rate of a diffusion source; and an abrupt junction is formed in diffusion. The invention has good diffusion uniformity and high rate of finished products of pieces; and the manufactured avalanche photodiode with incident light on the back surface has the characteristics of small dark current, high sensitivity, small series resistance, high reliability and the like.
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Description

technical field

[0001] The invention relates to a method for manufacturing a high-sensitivity avalanche photodiode used in an optical communication system, in particular to a method for manufacturing a double-diffused back light incident optical avalanche tube using epitaxy equipment. Background technique

[0002] The explosive growth of people's requirements for data services has promoted the rapid development of optical fiber communication technology. The development of optical fiber communication technology depends on the development level of optical fiber communication devices. Semiconductor photodetectors are the key components of the receiving part in optical fiber communication technology. Optical fiber communication technology is developing in the direction of high speed, large capacity and long distance. Avalanche photodiodes absorb incident photons by stimulated absorption to generate electron-hole pairs. There is a high electric field area in the avalanche photod...

Claims

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