40results about How to "Control doping concentration" patented technology

The invention discloses a hydrothermal preparation method for a sulfur doping titanium dioxide photocatalyst with an anatase structure, comprising the following steps: 1)preparing a nano powder precursor solution by agitating and mixing 8-12ml butyl titanate, 55-65ml deionized water, 15-25ml absolute ethyl alcohol, 5-10ml trolamine and 0.38-4.56 gthiourea at a temperature of 10-40 DEG C; 2) preparing a nano powder in a hydrothermal condition by placing the nano powder precursor solution into a reaction kettle, rising temperature at a speed of 1-5 DEG C/min to 150-240 DEG C and keeping the temperature to perform the hydrothermal reaction, stopping heating after 2-5 hours, when the reaction kettle is naturally cooled to room temperature, taking out the reactants, washing with the deionized water and the absolute ethyl alcohol for 3-4 times, and finally drying the reactants in a vacuum drying oven at 50-80 DEG C. The invention is capable of synchronous achieving processes both of the preparation of TiO2 nano particle and sulfur doping, which makes the preparation technical line of the catalyst more reasonable, be suitable to product quantity control with low energy consumption.

The invention relates to a method for growth of a germanium nitrogen codoped silicon carbide single crystal material. A PVT method is adopted according to the method; in the germanium-doped silicon carbide single crystal growth process, nitrogen at a certain proportion is led into a growth atmosphere, argon is led in to serve as a carrier gas with the pressure controlled to be 700-850 mbar, argon flow is 15-30 sccm, and the nitrogen flow is 0.5-2 sccm; and the germanium nitrogen codoped silicon carbide single crystal is obtained. On the one hand, high-concentration germanium element doping is implemented, and on the other hand, by adjusting specific doping concentration of germanium and nitrogen, the goal of increasing silicon carbide crystal lattice fitness degree, reducing crystal stress and improving crystal quality is achieved. Application of the silicon carbide crystal material to visible light and infrared light wave bands is expanded.

The invention provides a GaInP/GaAs/Ge/Ge four-junction solar cell, comprising a Ge substrate layer, wherein a first Ge sub cell, a first tunnel junction, a second Ge sub cell, a second tunnel junction, a GaAs sub cell, a third tunnel junction, a GaInP sub cell and a contact layer of (In)/GaAs or Ge are arranged on the Ge substrate in sequence. The invention also provides a preparation method for the GaInP/GaAs/Ge/Ge four-junction solar cell. The preparation method comprises the following steps: 1, the Ge substrate layer is provided; 2, the first Ge sub cell is grown on the surface of the Ge substrate layer; 3, the first tunnel junction is grown on the surface of the first Ge sub cell; 4, the second Ge sub cell is grown on the surface of the first tunnel junction; 5, the second tunnel junction is grown on the surface of the second Ge sub cell; 6, the GaAs sub cell is grown on the surface of the second tunnel junction; 7, the third tunnel junction is grown on the surface of the GaAs sub cell; 8, the GaInP sub cell is grown on the surface of the third tunnel junction; and 9, the contact layer is grown on the surface of the GaInP sub cell.

The invention discloses a shield gate MOSFET device with a uniformly doped channel and a processing technology, which are characterized in that on the basis of the existing shield gate MOSFET device,a heavily doped first conductive type polycrystalline silicon column region is formed in a groove etching heavily doped polycrystalline silicon filling mode, and then a first conductive type body region is formed in a rapid thermal annealing mode; by optimizing the doping concentration of the first conductive type body region, a mutation junction is formed between the first conductive type body region and the drift region, so that the threshold consistency of the device is improved, meanwhile, the problem that the first conductive type body region is excessively compensated by the drift regionis solved, the doping concentration of the body region is improved, and the possibility that a parasitic triode of the device is turned on is reduced; reliability of the device is improved.

The invention belongs to the field of novel energy source materials and devices, in particular relates to a preparation method of a semiconductor film solar cell and provides a CdS homojunction solar cell structure, wherein Cd2SnO4 serves as a transparent conducting layer, n type CdS serves as a window layer, Zn2SnO4 serves as a buffering layer material between the transparent conducting layer and the window layer, and p type CdS serves as an absorbing layer. On the basis of the CdS homojunction solar cell structure, a CdS solar cell is prepared by a dry process. Namely, the preparation method comprises the following steps of: performing radio-frequency sputtering on the borosilicate or aluminosilicate glass to form the transparent conducting layer Cd2SnO4; performing radio-frequency sputtering to form the buffering layer Zn2SnO4; performing radio-frequency sputtering to form the n type CdS serving as the window layer; depositing copper-doped CdS at room temperature through physical gas phase method and performing post treatment to form the p type CdS serving as the absorbing layer; or directly growing the p type copper-doped CdS serving as the absorbing layer at a certain temperature through the physical gas phase method; and depositing a metal electrode and connecting a lead. Through the structure and the process, sun light can be better collected and used; p type doping treatment can be effectively performed on the CdS; influences caused by lattice mismatch and interface state are eliminated; and then higher photoelectric conversion efficiency is achieved.

The invention discloses a high-catalytic activity probe material and a preparation method and application thereof. The high-catalytic activity probe material is rare-earth element co-coped high-catalytic activity SnO2 powder and is prepared from raw materials of tin chloride powder in 5-70 parts by weight and a rare-earth oxide in 1-10 parts by weight. The application is the application of the high-catalytic activity probe material in preparation of a supercapacitor negative electrode material. By co-doping of rare-earth elements in black tin dioxide and a surface of the black tin dioxide, a rare-earth salt solution is uniformly dissolved in a tin dioxide micronano structure; and by doping, the growth of a tin dioxide crystal can be effectively promoted, and a crystal phase interface is relatively good in bonding.

The invention discloses a solar selective absorption coating and a preparation method thereof. By preparing a spinel structure ceramic target material in advance and using a Ni target material to be subjected to radio frequency magnetron sputtering on a substrate, the Ni-doped CuCoMnOx spinel structure solar selective absorption coating is prepared. The coating can be applied in a high temperatureenvironment, the binding force between an absorption layer and the substrate can be effectively improved, the coating is prevented from peeling off, and in addition, the doping content of metal elements can be precisely controlled. The two adopted target materials are both connected with radio frequency sources, the two radio frequency sources can work simultaneously and can also work independently. The target distance, the sputtering power and the sputtering time of the two target materials can be separately adjusted as required. When the two target materials simultaneously work, atoms in the two target materials will be sputtered out at the same time, and accordingly, doping can be conducted in situ. The doping concentration is very conveniently controlled by adjusting the target distance and the sputtering power of the doping target.

The invention provides a preparation method of a nanometer silver/antimony doped tin oxide composite transparent conductive heat reflection coating. Ethylene glycol is adopted as a solvent and a coordination stabilizer in the preparation process of antimony doped tin oxide sol, hydrolysis and condensation of antimony ions can be effectively controlled, and therefore the doping concentration of the antimony ions is effectively controlled; in addition, when the antimony doped tin oxide sol and nanometer silver sol are mixed, nanometer silver will not be coagulated, and therefore effective doping of nanometer silver is achieved. The method specially comprises the following steps that the nanometer silver sol and the antimony doped tin oxide sol are prepared at first, then mixed sol is prepared, and finally, deposition is carried out on a substrate through a spraying technology to obtain the nanometer silver/antimony doped tin oxide composite transparent conductive heat reflection coating. The surface resistance of the coating prepared through the method reaches 20 or below, the infrared heat reflection rate reaches 80% or above, and the infrared reflection initial point can be adjusted from 2.5 micrometers to 1.5 micrometers so as to be applicable to different application occasions.

The invention provides a method for manufacturing amorphous silicon doped on the back surface of an HBC battery. The method comprises the following steps of: growing an intrinsic hydrogenated amorphous silicon layer on the back surface of an N-type polished silicon wafer; printing boron slurry on the hydrogenated amorphous silicon layer, and drying the silicon wafer; printing phosphorus slurry onthe hydrogenated amorphous silicon layer, and drying the silicon wafer; putting the printed silicon wafer into a laser for laser doping to obtain square resistance values required to be reached by a Pregion and an N region; plating a mask on the surface of a battery piece as a polishing barrier layer; and cutting the position between the P region and the N region by using laser, and removing themask in the middle. The method provided by the invention can ensure the uniformity and growth rate of back doped amorphous silicon.

The invention discloses a device for regulating and controlling the thin film material growth through substrate electrification. The device is characterized in that on the basis of the existing CVD (chemical vapor deposition) reaction device, a substrate electrification system is added; the substrate electrification system comprises a conducting circuit, a metal pole plate, a plug and a power supply; the metal pole plate is positioned in a CVD reaction cavity; the plug and the power supply are positioned outside the CVD reaction cavity; the metal pole plate is connected with the plug and the power supply through the conducting circuit. By using the device, positive and negative static charges or current can be exerted on the conducting substrate; an insulation substrate is polarized, so that electrostatic charges can be controllably generated at the surface; the goal of regulating and controlling the electric potential, the adsorbability, the electron energy state and the catalytic activity of the freely grown substrate is achieved. By using device and the growth method, the monocrystal size, the uniformity, the doping concentration, the layer number, the interlayer stacking mode,the twist angle, the chirality, the cleanliness and the like can be conveniently controlled in the thin film material preparation process.

Luminescent layer of the device includes at least one organic main body material and at least one adulterant. Adulterant is 0.1ppm - 500ppm (mole) of main body material. The device can realizes modulations of light color or hue and luminous efficiency without influence on current and voltage characteristics of main body material. The device possesses better stability and luminescence. In the invention, the device is prepared through mixing doping method by using doping in advance and coating by vaporization with double sources. Comparing with prior art, the invention controls doping density of adulterant accurately. More over, evaporation rate of double sources can be controlled in procedure of coating by vaporization to adjust density of adulterant through more means. Thus, the invention is flexible.

The invention discloses an MOS type device and a manufacturing method thereof. The MOS device comprises an epitaxial layer, a mesa above the epitaxial layer, and a well region which is arranged abovethe epitaxial layer and distributed at both sides of the mesa, wherein the well region is etched to acquire a trench region, a source region is acquired through epitaxial grow in the acquired trench region, a gate oxide layer and a gate electrode sequentially grow above the mesa, a source electrode is arranged above the well region, and a drain electrode is arranged below the epitaxial layer. TheMOS device is advantaged in that the well region and the source region are formed through the epitaxial process and the CMP process, the ion implantation process for preparing the well region and thesource region is not needed, crystal lattice damage caused by ion implantation can be reduced, doping concentration of the well region and the source region can be accurately controlled, and thereby length of channels is not restricted by photolithography accuracy.

The invention discloses a method for isolating a GaN-based device, which comprises the following steps of: evaporating a Fe film on a region, which needs to be subjected to device isolation, on the surface of a GaN HEMT structure, heating the Fe film to cover the region by adopting pulse laser, reasonably controlling laser pulse energy, accelerating Fe to diffuse into a sample and recrystallizing the sample, thereby merging Fe into a sample crystal lattice. Fe impurities are deep-energy-level impurities in the GaN-based material, and a high-resistance state can be formed by doping Fe in a region needing to be isolated, so that the aim of device isolation is fulfilled. According to the method, a sample is recrystallized through high-energy laser pulses, and Fe impurities are introduced in the recrystallization process, so that the defect density of an isolation region can be reduced.

Disclosed in the present invention is a solar cell local-area doping method. The method comprises the steps: (a) molecular films with hydrophilic groups and/or hydrophobic groups are formed on the surface of a substrate; (b) doping sources are provided on the surface of the substrate said in the step (a), and the doping sources are distributed on the patterns formed by the molecular films; and (c) the thermal diffusion is conducted to the obtained substrate in the step (b), and therefore the substrate of the local-area doping solar cell is formed. According to the method in the present invention, the local-area doping structures with different patterns and sizes can be obtained, and the method is particularly suitable for building local-area emitter junctions and high-low surface fields of the solar cell.