92 results about "Material growth" patented technology

The invention discloses a preparation method and a structure of a photonic integrated device, and the method comprises the steps: sequentially dividing a substrate into a front modulator region, a rear modulator region, a front grating region, a gain region and a rear grating region, and growing a first active layer after manufacturing a selected region epitaxial mask pattern in the gain region, the method comprises the following steps of: growing a first active layer in a front modulator region after mask etching operation, growing a second active layer in a front modulator region after mask etching operation, growing a third active layer in a grating region after mask etching operation, finally performing grating manufacturing, and completing manufacturing of a cladding layer, an electric contact layer, an inverted table shallow ridge waveguide structure, an electric isolation trench and an electrode. According to the method, integration of multiple materials is achieved through one-time selective area epitaxial growth and one-time butt joint growth, the material growth frequency is reduced, and the manufacturing cost is saved; the gain region and the rear modulator region realize forbidden band width offset through selective region epitaxial material growth, and multi-wavelength tuning and efficient modulation are realized through fluorescence wavelength difference design of each region, so that a solution can be provided for integration of a wide-wavelength tunable laser and a double-electro-absorption modulator.

The invention discloses a method for improving the surface bonding strength of an ultra-high-temperature ceramic coating through additive coarsening, and belongs to the technical field of ceramic coating preparation. Bonding layer slurry is arranged on the surface of the ultra-high-temperature ceramic coating to obtain a bonding layer, then rough layer slurry is arranged on the surface of the bonding layer to be coarsened to obtain a rough layer, and the rough layer is prepared into the ultra-high-temperature ceramic coating through additive coarsening. The maximum height difference Ry of the surface in the rough layer is controlled to range from 0.15 mm to 0.5 mm, and finally sintering treatment is conducted to obtain the rough ceramic coating. According to the method, the bonding firmness of the surface coating of the ceramic material and other materials can be remarkably improved, the possible negative influence of a subtractive roughening process on the mechanical property of the material is effectively avoided, meanwhile, the method does not depend on specific equipment and material growth characteristics, and therefore the method has a wider application prospect.

The invention discloses a method for growing graphene on the surface of a metal chalcogenide and application, and belongs to the technical field of low-dimensional material growth. The invention aims to solve the problems that the preparation of a large-area, atomic-scale, flat and defect-free continuous heterojunction thin film cannot be realized by the existing method, and the application of the heterojunction thin film in an actual device is limited. According to the method for growing the graphene on the surface of the metal chalcogenide, the high-quality graphene can be directly grown on the surface of the metal chalcogenide by optimizing interface engineering and a carbon source supply strategy, so that an atomic-scale flat and defect-free continuous film is obtained; the graphene can be directly integrated into a device without an additional transfer step, and pollution and damage to the graphene and the substrate in the transfer process are effectively reduced or avoided. Besides, the method has the capability of simultaneously growing on a plurality of substrates, is high in process expandability, provides feasibility for large-scale production, and has a good industrial application prospect.

The invention discloses a phase field method suitable for crystal growth under diffusion control in a molten salt system, and belongs to the field of numerical simulation of crystal growth in the molten salt system. According to the method, numerical simulation of the crystal growth process in the molten salt system is realized through the steps of geometric modeling, grid division, free energy function construction, order parameter and concentration evolution equation establishment, solution and the like. The method comprises the following steps: establishing a two-dimensional geometric model containing a crucible wall surface and a molten salt medium, and dividing grids; constructing a system free energy density functional; establishing a sequence parameter and concentration parameter evolution equation; and finally, calculating a phase field parameter and a physical property parameter of the single crystal material, and substituting the parameters into the equation for iterative solution to obtain a convergence solution of the sequence parameter and the concentration. Compared with the prior art, the method has the advantages that a solid-liquid interface does not need to be directly tracked, the model complexity and the calculation cost are reduced, the calculation requirement can be quickly responded, and the molten salt body ion concentration distribution can be calculated; the method can be applied to monitoring and prediction of the process of growing the single crystal material by the molten salt method.

This invention discloses a method and structure for fabricating a photonic integrated device. The method includes: dividing a substrate sequentially into a pre-modulator region, a post-modulator region, a pre-grating region, a gain region, and a post-grating region; growing a first active layer after fabricating a selected-area epitaxial mask pattern in the gain region; growing a second active layer in the pre-modulator region after mask etching; growing a third active layer in the grating region after mask etching; finally, fabricating the grating; and completing the fabrication of the cladding, electrical contact layer, inverted shallow ridge waveguide structure, electrical isolation trench, and electrodes. This method achieves the integration of multiple materials through a single selected-area epitaxial growth and a single docking growth, saving material growth steps and reducing manufacturing costs. The gain region and post-modulator region achieve bandgap shift through selected-area epitaxial material growth, and the design of photofluorescence wavelength differences in each region enables multi-wavelength tuning and efficient modulation, providing a solution for the integration of wide-wavelength tunable lasers and dual-electric absorption modulators.

The present invention discloses a method for enhancing the surface bonding strength of ultra-high temperature ceramic coatings through additive roughening, belonging to the technical field of ceramic coating preparation. A bonding layer slurry is disposed on the surface of the ultra-high temperature ceramic coating to obtain a bonding layer, and then a rough layer slurry is disposed on the surface of the bonding layer for roughening to obtain a rough layer. The range of the maximum surface height difference Ry in the rough layer is controlled to be 0.15 - 0.5 mm. Finally, sintering treatment is carried out to obtain a rough ceramic coating, thus achieving the goal. The method of the present invention can not only significantly enhance the bonding firmness between the surface coating of ceramic materials and other materials, but also effectively avoid the possible negative impact of subtractive roughening process on the mechanical properties of materials. At the same time, it does not depend on specific equipment and material growth characteristics, and therefore has a broader application prospect.

Devices, integrated circuit transistor structures, systems, and techniques are described herein related to gate all around field effect transistor circuits having an n-type transistor integrated with a p-type transistor such that each has stress engineering in the channel material thereof. The nanowires of the p-type transistor are released and surrounded by a sacrificial flowable oxide structure during source and drain material growth to apply compressive stress to the channel material. The n-type transistor source and drain are grown in the presence of a sacrificial lattice matched material to apply tensile stress to the channel material, and the nanowires are subsequently released. After removal of the sacrificial flowable oxide structure, gate structures are coupled to the n-type and p-type transistors.

The application discloses a two-dimensional material growth method based on countercurrent non-metal source supply, and belongs to the technical field of two-dimensional materials. In the preparation, a non-metal source is placed in a single-port quartz test tube and arranged downstream of a tube furnace by using countercurrent supply of a chemical vapor deposition system. After the non-metal source is gasified at high temperature, the non-metal source is diffused to the surface of a substrate by using a concentration gradient, and the flow rate of a carrier gas can be regulated to regulate the non-metal source gas phase concentration on the surface of the substrate. Compared with a conventional chemical vapor deposition method, the method solves the problems of surface "deactivation" of a metal source and substrate pollution caused by diffusion of the non-metal source to the metal source and the substrate before the growth process. The preparation method provided by the application has strong controllability, the morphology, domain size and optical quality of the obtained two-dimensional transition metal chalcogenide are uniform, and the two-dimensional transition metal chalcogenide has excellent optical and electrical properties and wide application prospect.

The invention provides a relay control method, device and system for a material growth signal and a medium, and relates to the technical field of material preparation. Comprising the steps that when relay equipment is in an open state, signals collected in the growth process of a target material are preprocessed, and a collected data set is obtained; according to the material pre-estimation preparation time corresponding to the growth process and the preparation time corresponding to the target material, obtaining a growth stage corresponding to the target material; identifying the collected data set by adopting at least one machine learning model corresponding to the growth stage to obtain data adjustment information; and adjusting the acquired data set according to the model priority of the at least one machine learning model and the data adjustment information, and sending the adjusted acquired data set to hardware equipment and / or a material preparation system. According to the method provided by the embodiment of the invention, the accuracy and flexibility of material preparation can be improved, and the material preparation precision and performance optimization are improved under the condition that the original performance of a material preparation system is not influenced.

The invention relates to the field of semiconductor growth, and discloses a material growth temperature optimization method, device, equipment, program product and system, and the method comprises the steps: obtaining a preset growth temperature curve of a target material; at the at least one target growth time node, irradiating the target material growing on the substrate by using an electron beam to form a starting point of the defect in the target material; when the growth of the target material is finished, information of the defect corresponding to the target growth time node is obtained, and the information comprises the size and the shape of the defect; based on the information of the defect, the state of the set temperature corresponding to the target growth time node is determined, and the state comprises the high set temperature and the low set temperature; and based on the state, adjusting a set temperature corresponding to the target growth time node until the temperature of the growth surface of the target material on the substrate is stabilized at the target growth temperature. The problems that existing non-contact temperature control measurement is poor in repeatability and surface temperature judgment is not direct enough can be solved.

Embodiments of the present application relate to the technical field of semiconductors, and provide a semiconductor switch component, a manufacturing method, a wafer, a packaging structure, and an electronic device, which are used to decrease power switch component on-resistance while satisfying power switch component breakdown voltage requirements. The semiconductor switch component comprises a substrate, a channel layer, a barrier layer, at least one transistor, and a regrowth semiconductor layer. The regrowth semiconductor layer is located in a first area that is provided with one transistor or multiple transistors connected in parallel, and a second area that is not provided with a transistor, and the regrowth semiconductor layer is provided on the side of the barrier layer facing a gate electrode. The portion of the regrowth semiconductor layer located in the first area is used to reduce on-resistance, and the portion of the regrowth semiconductor layer located in the second area is used to balance the supply of a gas growth source in a thin-film growth process, thereby achieving a uniform material growth thickness and material compounding ratio.

The invention belongs to the technical field of material growth and quantum optics, and discloses a method for growing formamidine lead iodide perovskite with a multi-quantum well fluorescence oscillation peak, and the method comprises the following steps: placing formamidine iodide in an evaporation area of a tube furnace, and placing a lead iodide nanosheet substrate in a deposition area adjacent to the evaporation area; introducing inert gas into the tubular furnace cavity and maintaining a negative pressure environment; and controlling the temperature and sintering time of the evaporation area and the deposition area in stages to realize directional transmission and controllable film formation of the gaseous precursor, and cooling to obtain the formamidine lead iodide perovskite with the multi-quantum well fluorescence oscillation peak. Based on tubular furnace equipment, by controlling the placement positions of drugs and samples and the sintering temperature and time of a tubular furnace, the growth conditions of perovskite can be flexibly controlled, and the method has the characteristics of low cost, simplicity in operation and low-temperature controllability; the multi-quantum well fluorescence oscillation peak phenomenon of the prepared sample shows the huge potential of the ultrathin perovskite in the field of quantum optics.

The invention discloses a horizontal transmission device of liquid phase growth equipment, and relates to the technical field of tellurium-cadmium-mercury material growth equipment.The horizontal transmission device comprises a first isolation piece and a second isolation piece, and a communication hole is formed in the isolation side wall of the second isolation piece; one side, facing the second separator, of the metal cover is hermetically connected with the isolation side wall; an inner cavity of the metal cover is communicated with an inner cavity of the first separator through a communicating hole; the outer magnet structure comprises a plurality of first magnets arranged on the outer side of the metal cover; the inner magnet structure comprises a plurality of second magnets arranged on the inner side of the metal cover, the first magnet is arranged in a space corresponding to the two adjacent second magnets, and the first magnet and the two corresponding adjacent second magnets repel each other; one end of the pull rod extends into the metal cover and is connected to the inner magnet structure, the other end of the pull rod extends into the first isolation piece and is connected to the substrate bearing plate, and the outer magnet structure can move to drive the pull rod to horizontally move, so that the substrate bearing plate can horizontally and stably move, and the influence on the growth process of the tellurium-cadmium-mercury material is avoided.

The application discloses a growth method of Si substrate GaN epitaxial film, which avoids the growth of AlN or AlN / AlGaN buffer layer when growing the GaN film on the Si substrate, forms an interface for isolating Si and Ga by pretreating the Si substrate, avoids the reaction of Ga and Si to produce remelting, adjusts the growth temperature of the GaN stress regulation layer and the GaN layer, adjusts the stress generated in the material growth process, and thus forms a continuous and complete single crystal GaN film. The method avoids the growth of AlN or AlN / AlGaN buffer layer, thereby effectively reducing the deposition of AlN in the reaction chamber at positions such as graphite and a nozzle, reducing the cost of epitaxial growth, reducing the instability caused by the deposits, and reducing the uncertainty and cost increase caused by the deposit treatment, effectively reducing the cost of epitaxial growth and the frequency of deposit treatment, improving the stability, reliability and product yield of epitaxial growth, growing other structure or functional layers on the GaN film, and applying to the fields of power electronic devices, illumination and the like.

The invention discloses a material growth analysis method based on image features. The method comprises the following steps: acquiring the growth condition of a nano-film material under a microscope, and selecting a later frame for pixel labeling; performing pixel classification and aggregation on the key frames according to the labels by using a tree model, and obtaining simplified position and shape information of a correction point, a crystal domain and a liquid growth center; acquiring a video jitter correction matrix by analyzing the center point coordinate of the correction point, and applying the matrix to the domain edge and the liquid growth nucleus; and matching the coordinates of each liquid growth center to obtain growth trajectories of different paths, filtering to relieve partial abnormal and error value interference, and drawing a liquid growth center trajectory and a domain mask pattern. According to the method, the growth condition of the nano-film material in the liquid growth process can be captured in real time, and traversal is provided for subsequent analysis.

The invention discloses a high-speed self-detection quantum cascade laser optical frequency comb based on a partitioned coplanar waveguide structure and a preparation method thereof. Comprising the following steps: preparing an epitaxial wafer on a substrate; growing a SiO2 layer on the surface of the epitaxial wafer; preparing a semi-insulating material growth window on the surface of the SiO2 layer, and corroding to the lower waveguide layer; filling an insulating material, and removing the residual SiO2 layer; preparing a coplanar waveguide structure; after insulation treatment, preparing a first metal electrode layer, and carrying out annealing treatment and electroplating thickening; preparing a second metal electrode layer on the back surface of the substrate, and performing annealing treatment and cleavage to obtain an optical frequency comb chip; and the optical frequency comb chip is subjected to high-heat-conduction sinking, face-down welding alignment and sintering, and the optical frequency comb is manufactured. According to the invention, by designing the partitioned coplanar waveguide structure, high-bandwidth packaging and efficient RF injection locking of the optical frequency comb of the quantum cascade laser are realized, coherence between comb teeth is enhanced, and system noise is reduced. The optical frequency comb multi-heterodyne self-detection function of the quantum cascade laser is endowed with the high broadband characteristic, an external photoelectric detector is not needed, and a current double-optical-comb system is simplified.

The application discloses an in-situ Raman spectrum testing method and system in a plasma environment. The in-situ Raman spectrum testing system comprises a Raman testing device and a material growth equipment for growing a sample in the plasma environment. The Raman testing device is used for emitting a pulsed light signal to the material growth equipment and irradiating the sample grown on the material growth equipment, exciting the sample to generate a pulsed Raman scattering signal, and collecting the pulsed Raman scattering signal in a pulsed time domain, and obtaining a Raman scattering spectrum through data processing. The in-situ Raman spectrum testing system disclosed by the application reduces the interference of stray light in the plasma environment on the Raman spectrum testing by emitting a pulsed light signal by the Raman testing device and receiving a pulsed time domain Raman scattering signal excited by the pulsed light signal.

A method for forming a semiconductor structure includes: providing a substrate, the substrate including a first region and a first fin located on the surface of the first region; forming an isolation prefabricated layer on the surface of the substrate, the isolation prefabricated layer also located on the sidewall of the first fin; etching the first fin to form a plurality of openings within the isolation prefabricated layer, the sidewalls of the openings exposing the isolation prefabricated layer; forming a barrier layer on the sidewalls of the openings; and forming a channel layer within the openings. Since the channel layer is formed by growing a channel layer material at the bottom of the openings, it is not necessary to first form a channel material layer and then etch it. Therefore, the stress of the channel layer is determined by the material growth, and there is no stress release due to subsequent etching, thus maintaining the stress of the channel layer and not affecting the improvement of the mobility of channel layer carriers, thereby improving the performance of the device.

A method for growing two-dimensional (2D) material on a substrate is described, the method including: (a) forming a mask layer on the substrate; (b) forming a trench in the mask layer, the trench having sidewalls formed in the mask layer that surround an exposed portion of the substrate; and (c) depositing nuclei of the 2D material on the exposed portion of the substrate and growing the nuclei into a single-domain monolayer of the 2D material, wherein the nuclei deposition and growth are performed at a temperature less than 705°C.

The invention provides a material growth simulation method, device and equipment and a storage medium, and relates to the technical field of simulation, and the method comprises the steps: calling material growth simulation software to execute simulation based on initial simulation parameters; calling material growth simulation software to execute simulation based on the initial simulation parameters; the initial simulation parameter is obtained by screening from a first simulation parameter interval input by a user according to a first model obtained by supervised learning, or is obtained by optimizing the first simulation parameter input by the user according to a second model obtained by reinforcement learning; when it is determined that simulation fails, the initial simulation parameters are optimized according to a second model, and target simulation parameters are obtained; and taking the target simulation parameter as an initial simulation parameter, and continuing to call the material growth simulation software to execute simulation based on the initial simulation parameter until it is determined that simulation succeeds. According to the method, automatic closed loop of simulation, verification and optimization is realized, so that the optimization efficiency of simulation parameters is improved.

The present invention relates to the technical field of the control of MOCVD exhaust gas. Provided is a method for controlling the flow ratio between inner and outer cavities of an MOCVD apparatus. An inner cavity and an outer cavity are comprised, wherein an inner-cavity exhaust gas filter, a first high-precision closed-loop control instrument, a first sensor, first PID, a first analog pair instrument, an inner-cavity electric control valve and an inner-cavity flowmeter are arranged at the tail of the inner cavity and are connected in sequence; an outer-cavity exhaust gas filter, a second high-precision closed-loop control instrument, a second sensor, second PID, a second analog pair instrument, an outer-cavity electric control valve and an outer-cavity flowmeter are arranged at the tail of the outer cavity and are connected in sequence; and the tail ends of the inner-cavity flowmeter and the outer-cavity flowmeter are in communication with a PUMP. Therefore, the accuracy of a reaction is ensured, the quality of a product is improved, the uniformity and consistency of material growth are promoted, and an appropriate flow ratio can prevent unnecessary gas flow and reduce energy consumption, thereby reducing production costs.

The invention relates to the technical field of diamond material growth, and discloses a single crystal diamond growth cavity mechanism which comprises a growth cavity and a filter plate, the right side of the growth cavity is fixedly connected with a connecting pipe, the right side of the connecting pipe is fixedly connected with a box body, and inner cavities are formed in the front side and the rear side of the interior of the box body; a first spring is arranged in the inner cavity, hollow blocks are slidably connected to the inner wall of the inner cavity, two pull rods are fixedly connected to the far sides of the two hollow blocks correspondingly, second springs are fixedly connected to the inner walls of the hollow blocks, and two sliding plates are fixedly connected to the close sides of the two second springs correspondingly; and two special-shaped blocks are fixedly connected to the sides, close to each other, of the two sliding plates correspondingly. According to the device, the filter plate is mounted and dismounted, so that people can conveniently clean the filter plate, the complexity of cleaning operation is reduced, and the growth quality of diamonds is improved.

The invention discloses a method for characterizing and controlling bright marks on the surface of a wavelength-extended InGaAs material. The method aims at solving the problem that in the molecular beam epitaxy (MBE) growth process, surface bright marks appear on the extension wavelength InGaAs material (the cut-off wavelength is 1.7-2.6 microns), and a series of comprehensive characterization and control strategies are provided. The strategy mainly comprises the following key steps: material growth, material characterization, bright mark diagnosis, dynamic feedback regulation and control and closed-loop control. According to the method, through cooperative detection of multi-dimensional key parameters such as material surface roughness, indium component uniformity, lattice relaxation, photoluminescence intensity and the like, effective control of bright marks on the surface of the extended wavelength InGaAs material is realized, and finally, the extended wavelength InGaAs material with high quality and high uniformity is obtained.

The invention discloses a preparation method of gamma-MnS with an exchange bias effect and stable at room temperature. According to the method, a normal-pressure chemical vapor deposition process is adopted, in the cooling stage after material growth is completed, sulfur vacancies are introduced into crystals by accurately controlling sulfur partial pressure and regulating and controlling the sulfur atmosphere where the material is located, and gamma-MnS which has the exchange bias effect and is stable at the room temperature is prepared. The EB effect is achieved through the sulfur vacancy induced intrinsic magnetic heterostructure in the single-phase gamma-MnS, dependence on an artificial heterogeneous interface is avoided, and potential application prospects are achieved in the field of development of next-generation high-performance, high-stability and low-power-consumption spin electronic devices and the like.

The application relates to the field of semiconductor materials, and provides a preparation method of an aluminum nitride single crystal material, which solves the defects of small size, poor quality, slow speed and difficult production of the aluminum nitride single crystal material prepared by the prior art; the method comprises the following steps: 1) raw material preparation: including AlN powder and SiC seed crystal; 2) AlN powder purification treatment; 3) TaC crucible preparation; 4) SiC seed crystal fixing and bonding; and 5) aluminum nitride single crystal material growth.

The invention belongs to the technical field, and particularly relates to a MgZrO material growth device under the non-equilibrium low-temperature condition and a preparation method thereof.The MgZrO material growth device comprises a box body and a control panel, the box body is divided into an upper cavity and a lower cavity, the upper cavity and the lower cavity are each independently provided with an exhaust port, an air inlet and a temperature adjusting mechanism, a growth mechanism is arranged between the two cavities, and oxygen plasmas are arranged in the two cavities; the growth mechanism comprises a placement table, a transfer assembly and an isolation assembly, the transfer assembly is arranged in the cavity on the lower side, the placement table is in transmission connection with the transfer assembly, the isolation assembly is arranged in the cavity on the upper side, and a communication window is formed between the upper cavity and the lower cavity. According to the invention, in the growth process of the MgO or ZrO material film, the environment where the base material is located can be rapidly switched, so that the temperature requirement of the corresponding material growth environment is met, the time required for environment adjustment is reduced, and the purity of the whole film growth is improved.

The invention discloses a hydrothermal reaction device based on a rotating magnetic field. The invention discloses a hydrothermal reaction device based on a rotating magnetic field. The hydrothermal reaction device comprises a reaction kettle, a coil, a silicon steel sheet iron core, an annular eddy current heating body, an inner sleeve barrel, a lining, a kettle cover and a stirrer, and the kettle cover is provided with a temperature and pressure sensor connector and a stress application rod through hole. Alternating current is introduced into the coil to generate a rotating magnetic field, the rotating magnetic field generates eddy current in the annular eddy current heating body to generate heat, so that the reaction kettle is heated, and meanwhile, the rotating magnetic field can drive the magnetic stirrer to stir and play a special role in electromagnetic stirring and directional growth on some magnetic reaction substances; the diffusion and directional crystallization process can be promoted, and the material growth mode is changed. The hydrothermal method and solvothermal method material synthesis device is of great significance to preparation of new materials with special structures and properties.

The invention provides an epitaxial growth method for a high-speed photoelectric device, which integrates material epitaxial growth, performance characterization and device design in a closed-loop feedback system, and generates a design scheme of a laser electrode and a waveguide structure by using electrical and optical performance actual measurement parameters of an actual epitaxial structure. And technological parameters of epitaxial growth are adjusted according to feedback, so that high collaboration of material growth and device design is realized. The method can effectively overcome the adverse effect of material growth deviation on the performance of the device, remarkably improves the performance consistency, reliability and comprehensive performance indexes of the prepared high-speed photoelectric device, and provides an effective way for realizing controllable and accurate manufacturing of the high-performance photoelectric device.

The application belongs to the technical field of optoelectronic device manufacturing, and particularly relates to a manufacturing method of an infrared double-lattice photonic crystal surface-emitting laser, which comprises material growth and device manufacturing. 0.3 Ga 0.7 AsSb / In 0.3 Ga 0.7 AsSb multi-quantum well light-emitting layer, stress matching of quantum barriers and quantum wells can be realized, loss of carriers is less, and radiation recombination efficiency is high; Ni, Ag metal and p-GaSb are used to form good electrical conduction through annealing, contact resistance is relatively low, and this is beneficial to the improvement of electro-optical conversion efficiency; the photonic crystal structure hole diameter is 160-200 nm; the x, y interval is equidistantly arranged, the arrangement interval is 100-150 nm, and the hole depth is 300-500 nm; the device realized through the above application design has high electro-optical conversion efficiency of the x, y double-lattice structure device, and the threshold power density can reach 1.8-1.91 kW / cm 2 . The application significantly improves the output efficiency and frequency stability of the laser by combining the double-lattice structure and the photonic crystal characteristics.

The invention relates to the technical field of molecular beam epitaxy, and particularly provides molecular beam epitaxy equipment which comprises a sample introduction chamber, a pretreatment chamber, a growth chamber and a program control system, the growth chamber comprises an acceptor complex dopant beam source controller; the acceptor complex dopant beam source controller comprises a reaction chamber, a differential pump set and a complex dopant screening device; the reaction chamber is an area in which radio frequency plasma containing acceptor complex composition atoms reacts; the differential pump set is used for maintaining the vacuum degree in the molecular beam epitaxy equipment and generating a pressure gradient; the complex dopant screening device is used for screening required acceptor complexes for material growth; the technical problems of intrinsic oxygen vacancy defect inhibition and efficient controllable p-type doping of the beta-Ga2O3 thin film can be effectively solved.