37 results about "Material growth" patented technology

The invention discloses a phase field method suitable for crystal growth under diffusion control in a molten salt system, and belongs to the field of numerical simulation of crystal growth in the molten salt system. According to the method, numerical simulation of the crystal growth process in the molten salt system is realized through the steps of geometric modeling, grid division, free energy function construction, order parameter and concentration evolution equation establishment, solution and the like. The method comprises the following steps: establishing a two-dimensional geometric model containing a crucible wall surface and a molten salt medium, and dividing grids; constructing a system free energy density functional; establishing a sequence parameter and concentration parameter evolution equation; and finally, calculating a phase field parameter and a physical property parameter of the single crystal material, and substituting the parameters into the equation for iterative solution to obtain a convergence solution of the sequence parameter and the concentration. Compared with the prior art, the method has the advantages that a solid-liquid interface does not need to be directly tracked, the model complexity and the calculation cost are reduced, the calculation requirement can be quickly responded, and the molten salt body ion concentration distribution can be calculated; the method can be applied to monitoring and prediction of the process of growing the single crystal material by the molten salt method.

Devices, integrated circuit transistor structures, systems, and techniques are described herein related to gate all around field effect transistor circuits having an n-type transistor integrated with a p-type transistor such that each has stress engineering in the channel material thereof. The nanowires of the p-type transistor are released and surrounded by a sacrificial flowable oxide structure during source and drain material growth to apply compressive stress to the channel material. The n-type transistor source and drain are grown in the presence of a sacrificial lattice matched material to apply tensile stress to the channel material, and the nanowires are subsequently released. After removal of the sacrificial flowable oxide structure, gate structures are coupled to the n-type and p-type transistors.

The application discloses a two-dimensional material growth method based on countercurrent non-metal source supply, and belongs to the technical field of two-dimensional materials. In the preparation, a non-metal source is placed in a single-port quartz test tube and arranged downstream of a tube furnace by using countercurrent supply of a chemical vapor deposition system. After the non-metal source is gasified at high temperature, the non-metal source is diffused to the surface of a substrate by using a concentration gradient, and the flow rate of a carrier gas can be regulated to regulate the non-metal source gas phase concentration on the surface of the substrate. Compared with a conventional chemical vapor deposition method, the method solves the problems of surface "deactivation" of a metal source and substrate pollution caused by diffusion of the non-metal source to the metal source and the substrate before the growth process. The preparation method provided by the application has strong controllability, the morphology, domain size and optical quality of the obtained two-dimensional transition metal chalcogenide are uniform, and the two-dimensional transition metal chalcogenide has excellent optical and electrical properties and wide application prospect.

The invention relates to the field of semiconductor growth, and discloses a material growth temperature optimization method, device, equipment, program product and system, and the method comprises the steps: obtaining a preset growth temperature curve of a target material; at the at least one target growth time node, irradiating the target material growing on the substrate by using an electron beam to form a starting point of the defect in the target material; when the growth of the target material is finished, information of the defect corresponding to the target growth time node is obtained, and the information comprises the size and the shape of the defect; based on the information of the defect, the state of the set temperature corresponding to the target growth time node is determined, and the state comprises the high set temperature and the low set temperature; and based on the state, adjusting a set temperature corresponding to the target growth time node until the temperature of the growth surface of the target material on the substrate is stabilized at the target growth temperature. The problems that existing non-contact temperature control measurement is poor in repeatability and surface temperature judgment is not direct enough can be solved.

The invention discloses a horizontal transmission device of liquid phase growth equipment, and relates to the technical field of tellurium-cadmium-mercury material growth equipment.The horizontal transmission device comprises a first isolation piece and a second isolation piece, and a communication hole is formed in the isolation side wall of the second isolation piece; one side, facing the second separator, of the metal cover is hermetically connected with the isolation side wall; an inner cavity of the metal cover is communicated with an inner cavity of the first separator through a communicating hole; the outer magnet structure comprises a plurality of first magnets arranged on the outer side of the metal cover; the inner magnet structure comprises a plurality of second magnets arranged on the inner side of the metal cover, the first magnet is arranged in a space corresponding to the two adjacent second magnets, and the first magnet and the two corresponding adjacent second magnets repel each other; one end of the pull rod extends into the metal cover and is connected to the inner magnet structure, the other end of the pull rod extends into the first isolation piece and is connected to the substrate bearing plate, and the outer magnet structure can move to drive the pull rod to horizontally move, so that the substrate bearing plate can horizontally and stably move, and the influence on the growth process of the tellurium-cadmium-mercury material is avoided.

The application discloses a growth method of Si substrate GaN epitaxial film, which avoids the growth of AlN or AlN / AlGaN buffer layer when growing the GaN film on the Si substrate, forms an interface for isolating Si and Ga by pretreating the Si substrate, avoids the reaction of Ga and Si to produce remelting, adjusts the growth temperature of the GaN stress regulation layer and the GaN layer, adjusts the stress generated in the material growth process, and thus forms a continuous and complete single crystal GaN film. The method avoids the growth of AlN or AlN / AlGaN buffer layer, thereby effectively reducing the deposition of AlN in the reaction chamber at positions such as graphite and a nozzle, reducing the cost of epitaxial growth, reducing the instability caused by the deposits, and reducing the uncertainty and cost increase caused by the deposit treatment, effectively reducing the cost of epitaxial growth and the frequency of deposit treatment, improving the stability, reliability and product yield of epitaxial growth, growing other structure or functional layers on the GaN film, and applying to the fields of power electronic devices, illumination and the like.

The application discloses an in-situ Raman spectrum testing method and system in a plasma environment. The in-situ Raman spectrum testing system comprises a Raman testing device and a material growth equipment for growing a sample in the plasma environment. The Raman testing device is used for emitting a pulsed light signal to the material growth equipment and irradiating the sample grown on the material growth equipment, exciting the sample to generate a pulsed Raman scattering signal, and collecting the pulsed Raman scattering signal in a pulsed time domain, and obtaining a Raman scattering spectrum through data processing. The in-situ Raman spectrum testing system disclosed by the application reduces the interference of stray light in the plasma environment on the Raman spectrum testing by emitting a pulsed light signal by the Raman testing device and receiving a pulsed time domain Raman scattering signal excited by the pulsed light signal.

A method for growing two-dimensional (2D) material on a substrate is described, the method including: (a) forming a mask layer on the substrate; (b) forming a trench in the mask layer, the trench having sidewalls formed in the mask layer that surround an exposed portion of the substrate; and (c) depositing nuclei of the 2D material on the exposed portion of the substrate and growing the nuclei into a single-domain monolayer of the 2D material, wherein the nuclei deposition and growth are performed at a temperature less than 705°C.

The invention provides a material growth simulation method, device and equipment and a storage medium, and relates to the technical field of simulation, and the method comprises the steps: calling material growth simulation software to execute simulation based on initial simulation parameters; calling material growth simulation software to execute simulation based on the initial simulation parameters; the initial simulation parameter is obtained by screening from a first simulation parameter interval input by a user according to a first model obtained by supervised learning, or is obtained by optimizing the first simulation parameter input by the user according to a second model obtained by reinforcement learning; when it is determined that simulation fails, the initial simulation parameters are optimized according to a second model, and target simulation parameters are obtained; and taking the target simulation parameter as an initial simulation parameter, and continuing to call the material growth simulation software to execute simulation based on the initial simulation parameter until it is determined that simulation succeeds. According to the method, automatic closed loop of simulation, verification and optimization is realized, so that the optimization efficiency of simulation parameters is improved.

The present invention relates to the technical field of the control of MOCVD exhaust gas. Provided is a method for controlling the flow ratio between inner and outer cavities of an MOCVD apparatus. An inner cavity and an outer cavity are comprised, wherein an inner-cavity exhaust gas filter, a first high-precision closed-loop control instrument, a first sensor, first PID, a first analog pair instrument, an inner-cavity electric control valve and an inner-cavity flowmeter are arranged at the tail of the inner cavity and are connected in sequence; an outer-cavity exhaust gas filter, a second high-precision closed-loop control instrument, a second sensor, second PID, a second analog pair instrument, an outer-cavity electric control valve and an outer-cavity flowmeter are arranged at the tail of the outer cavity and are connected in sequence; and the tail ends of the inner-cavity flowmeter and the outer-cavity flowmeter are in communication with a PUMP. Therefore, the accuracy of a reaction is ensured, the quality of a product is improved, the uniformity and consistency of material growth are promoted, and an appropriate flow ratio can prevent unnecessary gas flow and reduce energy consumption, thereby reducing production costs.

The invention discloses a method for characterizing and controlling bright marks on the surface of a wavelength-extended InGaAs material. The method aims at solving the problem that in the molecular beam epitaxy (MBE) growth process, surface bright marks appear on the extension wavelength InGaAs material (the cut-off wavelength is 1.7-2.6 microns), and a series of comprehensive characterization and control strategies are provided. The strategy mainly comprises the following key steps: material growth, material characterization, bright mark diagnosis, dynamic feedback regulation and control and closed-loop control. According to the method, through cooperative detection of multi-dimensional key parameters such as material surface roughness, indium component uniformity, lattice relaxation, photoluminescence intensity and the like, effective control of bright marks on the surface of the extended wavelength InGaAs material is realized, and finally, the extended wavelength InGaAs material with high quality and high uniformity is obtained.

The invention discloses a hydrothermal reaction device based on a rotating magnetic field. The invention discloses a hydrothermal reaction device based on a rotating magnetic field. The hydrothermal reaction device comprises a reaction kettle, a coil, a silicon steel sheet iron core, an annular eddy current heating body, an inner sleeve barrel, a lining, a kettle cover and a stirrer, and the kettle cover is provided with a temperature and pressure sensor connector and a stress application rod through hole. Alternating current is introduced into the coil to generate a rotating magnetic field, the rotating magnetic field generates eddy current in the annular eddy current heating body to generate heat, so that the reaction kettle is heated, and meanwhile, the rotating magnetic field can drive the magnetic stirrer to stir and play a special role in electromagnetic stirring and directional growth on some magnetic reaction substances; the diffusion and directional crystallization process can be promoted, and the material growth mode is changed. The hydrothermal method and solvothermal method material synthesis device is of great significance to preparation of new materials with special structures and properties.

The invention provides an epitaxial growth method for a high-speed photoelectric device, which integrates material epitaxial growth, performance characterization and device design in a closed-loop feedback system, and generates a design scheme of a laser electrode and a waveguide structure by using electrical and optical performance actual measurement parameters of an actual epitaxial structure. And technological parameters of epitaxial growth are adjusted according to feedback, so that high collaboration of material growth and device design is realized. The method can effectively overcome the adverse effect of material growth deviation on the performance of the device, remarkably improves the performance consistency, reliability and comprehensive performance indexes of the prepared high-speed photoelectric device, and provides an effective way for realizing controllable and accurate manufacturing of the high-performance photoelectric device.

This invention belongs to the fields of semiconductor thin film material growth technology and optoelectronic device technology, and discloses a gallium oxide epitaxial structure based on an n-plane sapphire substrate and its application in the fabrication of optoelectronic semiconductor devices or device arrays. The gallium oxide epitaxial structure includes a substrate and a Ga2O3 layer on the substrate. The substrate is the sapphire layer, which is a (11-23) oriented single-crystal sapphire, i.e., n-plane sapphire. The dual-mode device fabricated based on this gallium oxide epitaxial structure can achieve reversible functional switching under different bias voltages: it exhibits high sensitivity and fast response photodetector performance under low bias voltage; and it displays a significant and continuous photoconductivity effect under high bias voltage, which can be used to simulate the synaptic characteristics of brain-like neurons. This invention features a simple structural design and controllable process, enabling the simultaneous realization of high-performance ultraviolet photodetector and synaptic neural network functions in a single device, effectively improving the device's integration and application flexibility, and is suitable for fields such as ultraviolet imaging, optical communication, and intelligent sensing.

A method of growing a two-dimensional (2D) material on a substrate is described, the method comprising: (a) forming a mask layer on a substrate; (b) forming a trench in the mask layer, the trench having a sidewall formed in the mask layer, the sidewall surrounding an exposed portion of the substrate; and (c) depositing a core of 2D material on the exposed portion of the substrate and growing the core as a single domain monolayer of 2D material wherein the growth and deposition of the core are carried out at a temperature of less than 705 DEG C.

This application discloses a CaY2Co2Ge3O 12 The flux-driven growth method for single crystals belongs to the field of inorganic crystal material growth technology. This method includes: first, preparing high-purity CaY2Co2Ge3O through repeated solid-state sintering. 12 A polycrystalline precursor is prepared; the polycrystalline precursor is then uniformly mixed with a composite flux consisting of PbO and GeO2 in a molar ratio of 1.5~2.5:3.5~2.5; the mixture is then placed in an inert crucible and subjected to a temperature program: the temperature is raised to 1250~1350℃ and held for 12~36 hours, followed by a slow cooling to 700~900℃ at a rate of 1~5℃ / h, and finally cooled and the flux is separated to obtain CaY2Co2Ge3O 12 This invention marks the first successful controllable preparation of complete, high-quality single crystals of this composition. The process is stable and highly reproducible, providing a key material basis for studying its intrinsic physical properties.

This invention relates to the field of micro / nanomaterial fabrication and micro energy storage device technology. The invention discloses an in-situ fabrication method for on-chip integrated nanotube array supercapacitor electrodes, comprising the following steps: in-situ construction of an on-chip patterned template; in-situ electrochemical growth of a metal nanotube array; in-situ conversion of a metal / metal oxide composite structure; and the forming of an integrated electrode. This invention directly constructs a patterned anodic aluminum oxide template on a chip substrate with a pre-prepared patterned conductive layer (non-aluminum material) and completes material growth. The resulting nanotube array electrode and the current collector on the chip are grown in situ and integrally formed, avoiding complex material transfer and secondary bonding steps. This achieves perfect compatibility with planar microelectronic processes and can be mass-produced on 4-inch and larger wafers.

The embodiment of the invention provides a manufacturing method of a semiconductor structure and the semiconductor structure. The method comprises the following steps: providing a substrate comprising a substrate with a gate trench and a bottom gate part; wherein the gate trench is provided with a bottom surface and a side surface; the bottom gate part is formed in the region, close to the bottom surface, in the gate trench; part of the side surface of the gate trench is exposed; forming a groove filling part on the basis of the exposed part of the side surface of the gate groove by using a lateral epitaxial process; forming a channel active structure based on the groove filling part; the material growth direction of the lateral epitaxial process is taken as the width direction, and the width of the groove filling part is equal to the width of the bottom gate part and is greater than the width of the channel active structure in the width direction; and forming a top gate part covering the side surface of the channel active structure and the surface, far away from the bottom gate part, of the channel active structure to obtain a semiconductor structure comprising a full-surrounding gate. According to the embodiment of the invention, the change range of the effective channel width of the full-surrounding gate structure is expanded.

The invention belongs to the technical field of photoelectron manufacturing and new materials, and discloses a ferroelectric film / GaN-based red light laser and a preparation method and application thereof.The red light laser comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer, a lower ITO layer, a ferroelectric film layer and an upper ITO layer which are sequentially connected from bottom to top; the ferroelectric film layer can provide ferroelectric polarization, and the ITO layer can polarize the ferroelectric film. The ferroelectric film and the GaN-based laser chip are integrated, high-quality red light emitting is achieved, and the material growth difficulty is avoided. The ferroelectric film and the GaN-based laser are integrated, and a non-red light laser (lambda is 570-600nm) with a mature epitaxial technology is directly converted into a red light laser (greater than 620nm) by utilizing the polarization effect of the ferroelectric film, so that the problem that the GaN-based laser with high-quality red light emission is difficult to obtain by the existing method is solved.

The application discloses a kind of logic circuits based on high electron mobility transistor, belong to semiconductor device technical field, including by or non-gate and non-gate combination or gate circuit, and by and non-gate and non-gate combination and gate circuit.Or non-gate, and non-gate and non-gate are respectively integrated by parallel / series connection of depletion-mode HEMT device and enhancement-mode HEMT device.Construction is adopted in the present application lower layer gradual barrier layer or ladder gradual barrier layer, in combination with ion implantation area design, accurately control threshold voltage from material growth source, completely solve the technical problems of poor threshold voltage consistency and low stability caused by traditional gate recess etching process.Circuit noise tolerance is improved, static power consumption is effectively reduced, and is suitable for high-performance, low-power radio frequency and digital integrated electronic system.

The invention discloses a preparation method of a purple fluorescent material. The preparation method comprises the following steps: firstly, putting a metal target material and a material growth substrate into a magnetron sputtering system; the magnetron sputtering system is vacuumized; argon is input into a sputtering system, and the pressure of the sputtering system is increased by regulating and controlling a valve control device; then, direct-current voltage is applied to the metal target material, magnetron sputtering is carried out, and an alloy film is obtained on the substrate; and adding an iodine source into the alloy film to obtain the aluminum-doped cuprous iodide. The aluminum element is uniformly distributed in the copper film by a magnetron sputtering method to form the copper alloy film containing aluminum. The aluminum element is introduced into the cuprous iodide thin film, so that the growth of cuprous iodide crystal grains is promoted, and the phase change of cuprous iodide is also caused. The fluorescent material reacts with iodine through metal at room temperature, the method is simple, the requirement on experimental conditions is low, and the cost is low.

The application relates to the technical field of melting furnaces, and discloses a high-pressure floating-zone melting furnace for anisotropic UCM superconducting material and a control method thereof, which solves the problem that, after material growth is completed, slag is easily accumulated in a furnace cavity of an existing high-pressure floating-zone melting furnace, manual tool is needed to manually shovel and clean the slag, and the high-pressure floating-zone melting furnace comprises a bottom plate, a high-pressure floating-zone melting furnace body is fixedly installed at the top of the bottom plate, a supporting frame is fixedly installed at the rear side of the top of the high-pressure floating-zone melting furnace body, an outer lifting door and a translation door are movably installed at the front end and the rear end of the high-pressure floating-zone melting furnace body respectively, a connecting frame is fixedly installed at the top of the supporting frame, a servo motor is fixedly installed on one side of the connecting frame, and the high-pressure floating-zone melting furnace can quickly and conveniently push out the slag accumulated in the furnace and clean the slag attached to the inner wall, manual intervention is not needed, the labor amount of the operator is reduced, the work efficiency is improved, and the effective cleaning effect is achieved.

This invention discloses a two-dimensional material growth chamber and method. The chamber includes vertically stacked first, second, and third gas distribution plates. The lower surfaces of the first and second gas distribution plates are respectively provided with multiple sets of horizontally staggered flow-diverting holes. The inner bottom wall of the third gas distribution plate is equipped with independent first and second gas guide pipes, each communicating with one of the flow-diverting holes, with their outlets located on the lower surface of the third gas distribution plate. Through this structure, different precursor gases can be independently and vertically guided to the substrate region, remaining isolated during transport and only uniformly mixed near the substrate surface. This invention effectively solves the gas depletion effect and pre-reaction problem of traditional horizontal MOCVD systems, ensuring a highly uniform concentration and velocity distribution of the reactant gases on a large-area substrate, thereby growing high-quality, highly uniform two-dimensional material films.

This application provides a method for manufacturing a semiconductor structure and a semiconductor structure. The method includes: providing a substrate including a substrate with a gate trench and a bottom gate portion; wherein the gate trench has a bottom surface and a side surface; the bottom gate portion is formed in a region near the bottom surface within the gate trench; a portion of the side surface of the gate trench is exposed; a trench filling portion is formed based on the exposed side surface of the gate trench using a lateral epitaxial process; a channel active structure is formed based on the trench filling portion; with the material growth direction of the lateral epitaxial process as the width direction, the width of the trench filling portion is equal to the width of the bottom gate portion and greater than the width of the channel active structure along the width direction; a top gate portion is formed covering the side surface of the channel active structure and the surface of the channel active structure away from the bottom gate portion, thereby obtaining a semiconductor structure including a fully surrounding gate. This application expands the effective channel width variation range of the fully surrounding gate structure.

The invention provides a carbon nanotube array preparation system and method, and the system comprises a multi-channel reaction module which comprises at least two reaction chambers, and each reaction chamber is used for accommodating a substrate and providing an independent process environment; the material transfer module is used for loading the substrates into the reaction chambers and moving the treated substrates out of the reaction chambers; the gas path supply module is connected with the multi-channel reaction module and is used for independently supplying process gas required by reaction to each reaction chamber; the monitoring module is used for monitoring the material growth process in each reaction chamber; and the control module is in communication connection with the multi-channel reaction module, the material transfer module, the gas path supply module and the monitoring module so as to receive data acquired by the monitoring module and independently control the process parameters of each reaction chamber. According to the method, efficient and controllable preparation of the carbon nanotube array is achieved, the research and development efficiency and the product percent of pass are both improved, and the requirements of rapid iteration and industrialization are met.

The invention provides an electrosurgical instrument for eliminating operation smoke and a preparation method of the electrosurgical instrument, belongs to the field of medical instruments, and aims to coat a cutter head and a side surface of a traditional electrosurgical instrument with a designed coating material. The method comprises the following steps: 1, cleaning the surface of a tool bit of a metal electrode receiving a coating, and improving interface bonding between the coating and the surface of the tool bit of the metal electrode; 2, preparing a coating material through a material growth process; and 3, coating the surface of the cleaned electrode tool bit with a coating material to form the electrosurgical instrument based on the smokeless electrode. The thickness of the coating is the sum of the thicknesses of the coatings covering the upper surface and the lower surface, and the thickness is required to be nanoscale. The coating material disclosed by the invention can realize uniform heating of human tissues, eliminate operation smoke and improve safety; the structure is simple, operation is convenient, and real-time performance is high.

The utility model discloses a cleaning tool for a high-vacuum material growth substrate carrier, and relates to the technical field of semiconductor material processing, and the cleaning tool comprises a fixed rod, a first flower basket body and a second flower basket body; the first flower basket body and the second flower basket body are stacked from bottom to top; the first flower basket body is provided with a first containing cavity used for containing a carrier. The second flower basket body is provided with a second containing cavity used for containing a carrier. The first flower basket body is provided with a connecting hole which allows one end of the fixing rod to be inserted and is detachably connected with the fixing rod; the second flower basket body is provided with a first through hole for one end of the fixing rod to movably penetrate through. By means of the design, two carriers can be cleaned at the same time, and the working efficiency is effectively improved; meanwhile, the design structure is simple, assembling and disassembling are convenient, the fixing rod, the first flower basket body and the second flower basket body can be independently disassembled, and follow-up maintenance is facilitated.

The invention relates to the technical field of semiconductor single crystal material growth, in particular to a method for growing gallium oxide based on interpretable machine learning optimization edge-defined film-fed growth, which comprises the following steps: constructing a technological parameter-temperature gradient mapping database of gallium oxide crystal growth; constructing a framework model of ensemble learning, and realizing multi-algorithm parallel optimization: adopting a multi-dimensional evaluation strategy, and finally selecting a prediction model with the highest matching degree with a preset process standard; using an SHAP method to compare feature importance in the optimal prediction model; and inputting the parameter set into the prediction model, accurately obtaining the axial temperature gradient distribution characteristics of the crystal, carrying out solution space optimization on a prediction result by using an optimization algorithm, and screening out a parameter combination which simultaneously meets the axial temperature gradient control requirements. According to the method, an innovative solution is provided for optimization of an EFG (edge-defined film-fed growth) crystal growth process based on a thermal field intelligent prediction technology of machine learning.

The invention belongs to the technical field of two-dimensional material growth and preparation, and particularly relates to a preparation method of a silicon tellurium heterojunction based on molecular beam epitaxial growth. Comprising the following steps: S1, sequentially carrying out argon ion etching and annealing treatment on a metal substrate; s2, silicon atoms are deposited on the surface of the metal substrate for 16 min to obtain a silicon nanobelt, and then annealing treatment is carried out; and S3, depositing tellurium atoms on the surface of the silicon nanobelt through a molecular beam epitaxy method to obtain the silicon tellurium heterojunction, wherein the deposition time is 10 minutes. A molecular beam epitaxy system is established, growth conditions can be accurately controlled, controllable growth of a two-dimensional material is achieved, the one-dimensional space of the silicon nanobelt is used as a template, a guiding effect is provided for growth of the silicon-tellurium heterojunction, tellurium atoms are promoted to be orderly arranged along the silicon nanobelt, and the silicon-tellurium heterojunction of a regular structure is formed.

This application relates to the field of materials growth and discloses an epitaxial layer and a method for controlling its growth. The method includes: growing a gallium oxide film on the surface of a substrate and acquiring a reflective high-energy electron diffraction (HEED) image of the gallium oxide film in real time; determining the HEED intensity based on the HEED image and determining the relationship between the HEED intensity and the growth time of the gallium oxide film; comparing the relationship with a standard relationship between the HEED intensity and growth time during gallium oxide monolayer growth to determine the growth mode of the gallium oxide film. The method of this application does not rely on human experience for judgment and can accurately determine whether the gallium oxide film is grown as a monolayer, thus obtaining a gallium oxide film grown as a monolayer.