65 results about "Material growth" patented technology

The invention discloses a preparation method and a structure of a photonic integrated device, and the method comprises the steps: sequentially dividing a substrate into a front modulator region, a rear modulator region, a front grating region, a gain region and a rear grating region, and growing a first active layer after manufacturing a selected region epitaxial mask pattern in the gain region, the method comprises the following steps of: growing a first active layer in a front modulator region after mask etching operation, growing a second active layer in a front modulator region after mask etching operation, growing a third active layer in a grating region after mask etching operation, finally performing grating manufacturing, and completing manufacturing of a cladding layer, an electric contact layer, an inverted table shallow ridge waveguide structure, an electric isolation trench and an electrode. According to the method, integration of multiple materials is achieved through one-time selective area epitaxial growth and one-time butt joint growth, the material growth frequency is reduced, and the manufacturing cost is saved; the gain region and the rear modulator region realize forbidden band width offset through selective region epitaxial material growth, and multi-wavelength tuning and efficient modulation are realized through fluorescence wavelength difference design of each region, so that a solution can be provided for integration of a wide-wavelength tunable laser and a double-electro-absorption modulator.

The invention discloses a phase field method suitable for crystal growth under diffusion control in a molten salt system, and belongs to the field of numerical simulation of crystal growth in the molten salt system. According to the method, numerical simulation of the crystal growth process in the molten salt system is realized through the steps of geometric modeling, grid division, free energy function construction, order parameter and concentration evolution equation establishment, solution and the like. The method comprises the following steps: establishing a two-dimensional geometric model containing a crucible wall surface and a molten salt medium, and dividing grids; constructing a system free energy density functional; establishing a sequence parameter and concentration parameter evolution equation; and finally, calculating a phase field parameter and a physical property parameter of the single crystal material, and substituting the parameters into the equation for iterative solution to obtain a convergence solution of the sequence parameter and the concentration. Compared with the prior art, the method has the advantages that a solid-liquid interface does not need to be directly tracked, the model complexity and the calculation cost are reduced, the calculation requirement can be quickly responded, and the molten salt body ion concentration distribution can be calculated; the method can be applied to monitoring and prediction of the process of growing the single crystal material by the molten salt method.

This invention discloses a method and structure for fabricating a photonic integrated device. The method includes: dividing a substrate sequentially into a pre-modulator region, a post-modulator region, a pre-grating region, a gain region, and a post-grating region; growing a first active layer after fabricating a selected-area epitaxial mask pattern in the gain region; growing a second active layer in the pre-modulator region after mask etching; growing a third active layer in the grating region after mask etching; finally, fabricating the grating; and completing the fabrication of the cladding, electrical contact layer, inverted shallow ridge waveguide structure, electrical isolation trench, and electrodes. This method achieves the integration of multiple materials through a single selected-area epitaxial growth and a single docking growth, saving material growth steps and reducing manufacturing costs. The gain region and post-modulator region achieve bandgap shift through selected-area epitaxial material growth, and the design of photofluorescence wavelength differences in each region enables multi-wavelength tuning and efficient modulation, providing a solution for the integration of wide-wavelength tunable lasers and dual-electric absorption modulators.

Devices, integrated circuit transistor structures, systems, and techniques are described herein related to gate all around field effect transistor circuits having an n-type transistor integrated with a p-type transistor such that each has stress engineering in the channel material thereof. The nanowires of the p-type transistor are released and surrounded by a sacrificial flowable oxide structure during source and drain material growth to apply compressive stress to the channel material. The n-type transistor source and drain are grown in the presence of a sacrificial lattice matched material to apply tensile stress to the channel material, and the nanowires are subsequently released. After removal of the sacrificial flowable oxide structure, gate structures are coupled to the n-type and p-type transistors.

The application discloses a two-dimensional material growth method based on countercurrent non-metal source supply, and belongs to the technical field of two-dimensional materials. In the preparation, a non-metal source is placed in a single-port quartz test tube and arranged downstream of a tube furnace by using countercurrent supply of a chemical vapor deposition system. After the non-metal source is gasified at high temperature, the non-metal source is diffused to the surface of a substrate by using a concentration gradient, and the flow rate of a carrier gas can be regulated to regulate the non-metal source gas phase concentration on the surface of the substrate. Compared with a conventional chemical vapor deposition method, the method solves the problems of surface "deactivation" of a metal source and substrate pollution caused by diffusion of the non-metal source to the metal source and the substrate before the growth process. The preparation method provided by the application has strong controllability, the morphology, domain size and optical quality of the obtained two-dimensional transition metal chalcogenide are uniform, and the two-dimensional transition metal chalcogenide has excellent optical and electrical properties and wide application prospect.

The invention provides a relay control method, device and system for a material growth signal and a medium, and relates to the technical field of material preparation. Comprising the steps that when relay equipment is in an open state, signals collected in the growth process of a target material are preprocessed, and a collected data set is obtained; according to the material pre-estimation preparation time corresponding to the growth process and the preparation time corresponding to the target material, obtaining a growth stage corresponding to the target material; identifying the collected data set by adopting at least one machine learning model corresponding to the growth stage to obtain data adjustment information; and adjusting the acquired data set according to the model priority of the at least one machine learning model and the data adjustment information, and sending the adjusted acquired data set to hardware equipment and / or a material preparation system. According to the method provided by the embodiment of the invention, the accuracy and flexibility of material preparation can be improved, and the material preparation precision and performance optimization are improved under the condition that the original performance of a material preparation system is not influenced.

The invention relates to the field of semiconductor growth, and discloses a material growth temperature optimization method, device, equipment, program product and system, and the method comprises the steps: obtaining a preset growth temperature curve of a target material; at the at least one target growth time node, irradiating the target material growing on the substrate by using an electron beam to form a starting point of the defect in the target material; when the growth of the target material is finished, information of the defect corresponding to the target growth time node is obtained, and the information comprises the size and the shape of the defect; based on the information of the defect, the state of the set temperature corresponding to the target growth time node is determined, and the state comprises the high set temperature and the low set temperature; and based on the state, adjusting a set temperature corresponding to the target growth time node until the temperature of the growth surface of the target material on the substrate is stabilized at the target growth temperature. The problems that existing non-contact temperature control measurement is poor in repeatability and surface temperature judgment is not direct enough can be solved.

The invention discloses a horizontal transmission device of liquid phase growth equipment, and relates to the technical field of tellurium-cadmium-mercury material growth equipment.The horizontal transmission device comprises a first isolation piece and a second isolation piece, and a communication hole is formed in the isolation side wall of the second isolation piece; one side, facing the second separator, of the metal cover is hermetically connected with the isolation side wall; an inner cavity of the metal cover is communicated with an inner cavity of the first separator through a communicating hole; the outer magnet structure comprises a plurality of first magnets arranged on the outer side of the metal cover; the inner magnet structure comprises a plurality of second magnets arranged on the inner side of the metal cover, the first magnet is arranged in a space corresponding to the two adjacent second magnets, and the first magnet and the two corresponding adjacent second magnets repel each other; one end of the pull rod extends into the metal cover and is connected to the inner magnet structure, the other end of the pull rod extends into the first isolation piece and is connected to the substrate bearing plate, and the outer magnet structure can move to drive the pull rod to horizontally move, so that the substrate bearing plate can horizontally and stably move, and the influence on the growth process of the tellurium-cadmium-mercury material is avoided.

The application discloses a growth method of Si substrate GaN epitaxial film, which avoids the growth of AlN or AlN / AlGaN buffer layer when growing the GaN film on the Si substrate, forms an interface for isolating Si and Ga by pretreating the Si substrate, avoids the reaction of Ga and Si to produce remelting, adjusts the growth temperature of the GaN stress regulation layer and the GaN layer, adjusts the stress generated in the material growth process, and thus forms a continuous and complete single crystal GaN film. The method avoids the growth of AlN or AlN / AlGaN buffer layer, thereby effectively reducing the deposition of AlN in the reaction chamber at positions such as graphite and a nozzle, reducing the cost of epitaxial growth, reducing the instability caused by the deposits, and reducing the uncertainty and cost increase caused by the deposit treatment, effectively reducing the cost of epitaxial growth and the frequency of deposit treatment, improving the stability, reliability and product yield of epitaxial growth, growing other structure or functional layers on the GaN film, and applying to the fields of power electronic devices, illumination and the like.

The invention discloses a high-speed self-detection quantum cascade laser optical frequency comb based on a partitioned coplanar waveguide structure and a preparation method thereof. Comprising the following steps: preparing an epitaxial wafer on a substrate; growing a SiO2 layer on the surface of the epitaxial wafer; preparing a semi-insulating material growth window on the surface of the SiO2 layer, and corroding to the lower waveguide layer; filling an insulating material, and removing the residual SiO2 layer; preparing a coplanar waveguide structure; after insulation treatment, preparing a first metal electrode layer, and carrying out annealing treatment and electroplating thickening; preparing a second metal electrode layer on the back surface of the substrate, and performing annealing treatment and cleavage to obtain an optical frequency comb chip; and the optical frequency comb chip is subjected to high-heat-conduction sinking, face-down welding alignment and sintering, and the optical frequency comb is manufactured. According to the invention, by designing the partitioned coplanar waveguide structure, high-bandwidth packaging and efficient RF injection locking of the optical frequency comb of the quantum cascade laser are realized, coherence between comb teeth is enhanced, and system noise is reduced. The optical frequency comb multi-heterodyne self-detection function of the quantum cascade laser is endowed with the high broadband characteristic, an external photoelectric detector is not needed, and a current double-optical-comb system is simplified.

The application discloses an in-situ Raman spectrum testing method and system in a plasma environment. The in-situ Raman spectrum testing system comprises a Raman testing device and a material growth equipment for growing a sample in the plasma environment. The Raman testing device is used for emitting a pulsed light signal to the material growth equipment and irradiating the sample grown on the material growth equipment, exciting the sample to generate a pulsed Raman scattering signal, and collecting the pulsed Raman scattering signal in a pulsed time domain, and obtaining a Raman scattering spectrum through data processing. The in-situ Raman spectrum testing system disclosed by the application reduces the interference of stray light in the plasma environment on the Raman spectrum testing by emitting a pulsed light signal by the Raman testing device and receiving a pulsed time domain Raman scattering signal excited by the pulsed light signal.

A method for forming a semiconductor structure includes: providing a substrate, the substrate including a first region and a first fin located on the surface of the first region; forming an isolation prefabricated layer on the surface of the substrate, the isolation prefabricated layer also located on the sidewall of the first fin; etching the first fin to form a plurality of openings within the isolation prefabricated layer, the sidewalls of the openings exposing the isolation prefabricated layer; forming a barrier layer on the sidewalls of the openings; and forming a channel layer within the openings. Since the channel layer is formed by growing a channel layer material at the bottom of the openings, it is not necessary to first form a channel material layer and then etch it. Therefore, the stress of the channel layer is determined by the material growth, and there is no stress release due to subsequent etching, thus maintaining the stress of the channel layer and not affecting the improvement of the mobility of channel layer carriers, thereby improving the performance of the device.

A method for growing two-dimensional (2D) material on a substrate is described, the method including: (a) forming a mask layer on the substrate; (b) forming a trench in the mask layer, the trench having sidewalls formed in the mask layer that surround an exposed portion of the substrate; and (c) depositing nuclei of the 2D material on the exposed portion of the substrate and growing the nuclei into a single-domain monolayer of the 2D material, wherein the nuclei deposition and growth are performed at a temperature less than 705°C.

The invention provides a material growth simulation method, device and equipment and a storage medium, and relates to the technical field of simulation, and the method comprises the steps: calling material growth simulation software to execute simulation based on initial simulation parameters; calling material growth simulation software to execute simulation based on the initial simulation parameters; the initial simulation parameter is obtained by screening from a first simulation parameter interval input by a user according to a first model obtained by supervised learning, or is obtained by optimizing the first simulation parameter input by the user according to a second model obtained by reinforcement learning; when it is determined that simulation fails, the initial simulation parameters are optimized according to a second model, and target simulation parameters are obtained; and taking the target simulation parameter as an initial simulation parameter, and continuing to call the material growth simulation software to execute simulation based on the initial simulation parameter until it is determined that simulation succeeds. According to the method, automatic closed loop of simulation, verification and optimization is realized, so that the optimization efficiency of simulation parameters is improved.

The present invention relates to the technical field of the control of MOCVD exhaust gas. Provided is a method for controlling the flow ratio between inner and outer cavities of an MOCVD apparatus. An inner cavity and an outer cavity are comprised, wherein an inner-cavity exhaust gas filter, a first high-precision closed-loop control instrument, a first sensor, first PID, a first analog pair instrument, an inner-cavity electric control valve and an inner-cavity flowmeter are arranged at the tail of the inner cavity and are connected in sequence; an outer-cavity exhaust gas filter, a second high-precision closed-loop control instrument, a second sensor, second PID, a second analog pair instrument, an outer-cavity electric control valve and an outer-cavity flowmeter are arranged at the tail of the outer cavity and are connected in sequence; and the tail ends of the inner-cavity flowmeter and the outer-cavity flowmeter are in communication with a PUMP. Therefore, the accuracy of a reaction is ensured, the quality of a product is improved, the uniformity and consistency of material growth are promoted, and an appropriate flow ratio can prevent unnecessary gas flow and reduce energy consumption, thereby reducing production costs.

The invention relates to the technical field of diamond material growth, and discloses a single crystal diamond growth cavity mechanism which comprises a growth cavity and a filter plate, the right side of the growth cavity is fixedly connected with a connecting pipe, the right side of the connecting pipe is fixedly connected with a box body, and inner cavities are formed in the front side and the rear side of the interior of the box body; a first spring is arranged in the inner cavity, hollow blocks are slidably connected to the inner wall of the inner cavity, two pull rods are fixedly connected to the far sides of the two hollow blocks correspondingly, second springs are fixedly connected to the inner walls of the hollow blocks, and two sliding plates are fixedly connected to the close sides of the two second springs correspondingly; and two special-shaped blocks are fixedly connected to the sides, close to each other, of the two sliding plates correspondingly. According to the device, the filter plate is mounted and dismounted, so that people can conveniently clean the filter plate, the complexity of cleaning operation is reduced, and the growth quality of diamonds is improved.

The invention discloses a method for characterizing and controlling bright marks on the surface of a wavelength-extended InGaAs material. The method aims at solving the problem that in the molecular beam epitaxy (MBE) growth process, surface bright marks appear on the extension wavelength InGaAs material (the cut-off wavelength is 1.7-2.6 microns), and a series of comprehensive characterization and control strategies are provided. The strategy mainly comprises the following key steps: material growth, material characterization, bright mark diagnosis, dynamic feedback regulation and control and closed-loop control. According to the method, through cooperative detection of multi-dimensional key parameters such as material surface roughness, indium component uniformity, lattice relaxation, photoluminescence intensity and the like, effective control of bright marks on the surface of the extended wavelength InGaAs material is realized, and finally, the extended wavelength InGaAs material with high quality and high uniformity is obtained.

The invention discloses a preparation method of gamma-MnS with an exchange bias effect and stable at room temperature. According to the method, a normal-pressure chemical vapor deposition process is adopted, in the cooling stage after material growth is completed, sulfur vacancies are introduced into crystals by accurately controlling sulfur partial pressure and regulating and controlling the sulfur atmosphere where the material is located, and gamma-MnS which has the exchange bias effect and is stable at the room temperature is prepared. The EB effect is achieved through the sulfur vacancy induced intrinsic magnetic heterostructure in the single-phase gamma-MnS, dependence on an artificial heterogeneous interface is avoided, and potential application prospects are achieved in the field of development of next-generation high-performance, high-stability and low-power-consumption spin electronic devices and the like.

The application relates to the field of semiconductor materials, and provides a preparation method of an aluminum nitride single crystal material, which solves the defects of small size, poor quality, slow speed and difficult production of the aluminum nitride single crystal material prepared by the prior art; the method comprises the following steps: 1) raw material preparation: including AlN powder and SiC seed crystal; 2) AlN powder purification treatment; 3) TaC crucible preparation; 4) SiC seed crystal fixing and bonding; and 5) aluminum nitride single crystal material growth.

The invention discloses a hydrothermal reaction device based on a rotating magnetic field. The invention discloses a hydrothermal reaction device based on a rotating magnetic field. The hydrothermal reaction device comprises a reaction kettle, a coil, a silicon steel sheet iron core, an annular eddy current heating body, an inner sleeve barrel, a lining, a kettle cover and a stirrer, and the kettle cover is provided with a temperature and pressure sensor connector and a stress application rod through hole. Alternating current is introduced into the coil to generate a rotating magnetic field, the rotating magnetic field generates eddy current in the annular eddy current heating body to generate heat, so that the reaction kettle is heated, and meanwhile, the rotating magnetic field can drive the magnetic stirrer to stir and play a special role in electromagnetic stirring and directional growth on some magnetic reaction substances; the diffusion and directional crystallization process can be promoted, and the material growth mode is changed. The hydrothermal method and solvothermal method material synthesis device is of great significance to preparation of new materials with special structures and properties.

The invention provides an epitaxial growth method for a high-speed photoelectric device, which integrates material epitaxial growth, performance characterization and device design in a closed-loop feedback system, and generates a design scheme of a laser electrode and a waveguide structure by using electrical and optical performance actual measurement parameters of an actual epitaxial structure. And technological parameters of epitaxial growth are adjusted according to feedback, so that high collaboration of material growth and device design is realized. The method can effectively overcome the adverse effect of material growth deviation on the performance of the device, remarkably improves the performance consistency, reliability and comprehensive performance indexes of the prepared high-speed photoelectric device, and provides an effective way for realizing controllable and accurate manufacturing of the high-performance photoelectric device.

The application belongs to the technical field of optoelectronic device manufacturing, and particularly relates to a manufacturing method of an infrared double-lattice photonic crystal surface-emitting laser, which comprises material growth and device manufacturing. 0.3 Ga 0.7 AsSb / In 0.3 Ga 0.7 AsSb multi-quantum well light-emitting layer, stress matching of quantum barriers and quantum wells can be realized, loss of carriers is less, and radiation recombination efficiency is high; Ni, Ag metal and p-GaSb are used to form good electrical conduction through annealing, contact resistance is relatively low, and this is beneficial to the improvement of electro-optical conversion efficiency; the photonic crystal structure hole diameter is 160-200 nm; the x, y interval is equidistantly arranged, the arrangement interval is 100-150 nm, and the hole depth is 300-500 nm; the device realized through the above application design has high electro-optical conversion efficiency of the x, y double-lattice structure device, and the threshold power density can reach 1.8-1.91 kW / cm 2 . The application significantly improves the output efficiency and frequency stability of the laser by combining the double-lattice structure and the photonic crystal characteristics.

The application discloses a material growth analysis method based on image features, comprising: obtaining the growth condition of a nanometer thin film material under a microscope and selecting a late frame for pixel labeling; using a tree model to classify and aggregate pixels of a key frame according to the labeling, to obtain simplified position and shape information of a correction point, a domain, and a liquid growth center; obtaining a video jitter correction matrix by analyzing the center point coordinates of the correction point and applying the matrix to the domain edge and the liquid growth core; matching the coordinates of each liquid growth center to obtain the growth trajectories of different paths, filtering part of the abnormal and error value interference, and drawing the liquid growth center trajectory and the domain mask diagram. The method can capture the growth condition of the liquid growth process of the nanometer thin film material in real time, and provide traversal for subsequent analysis.

The invention provides a foaming cable copper conductor filled with a carbon nanostructure and a preparation method of the foaming cable copper conductor, and belongs to the technical field of cable conductor processing, according to the foaming cable copper conductor filled with the carbon nanostructure and the preparation method of the foaming cable copper conductor, pores are formed in a copper matrix, the porosity is 15%-25%, and the pores are of a honeycomb-shaped interconnection structure; according to the preparation method, the copper conductor is provided with pores, carbon nanomaterial tension layers are inserted into the pores, carbon nanomaterial growth layers are inserted into the pores, a porous structure is generated in the copper conductor, and carbon nanomaterials are formed in the porous structure, so that the skin effect loss of a pure conductor under high-frequency current is reduced, and the conductivity is improved.

This invention belongs to the fields of semiconductor thin film material growth technology and optoelectronic device technology, and discloses a gallium oxide epitaxial structure based on an n-plane sapphire substrate and its application in the fabrication of optoelectronic semiconductor devices or device arrays. The gallium oxide epitaxial structure includes a substrate and a Ga2O3 layer on the substrate. The substrate is the sapphire layer, which is a (11-23) oriented single-crystal sapphire, i.e., n-plane sapphire. The dual-mode device fabricated based on this gallium oxide epitaxial structure can achieve reversible functional switching under different bias voltages: it exhibits high sensitivity and fast response photodetector performance under low bias voltage; and it displays a significant and continuous photoconductivity effect under high bias voltage, which can be used to simulate the synaptic characteristics of brain-like neurons. This invention features a simple structural design and controllable process, enabling the simultaneous realization of high-performance ultraviolet photodetector and synaptic neural network functions in a single device, effectively improving the device's integration and application flexibility, and is suitable for fields such as ultraviolet imaging, optical communication, and intelligent sensing.

A method of growing a two-dimensional (2D) material on a substrate is described, the method comprising: (a) forming a mask layer on a substrate; (b) forming a trench in the mask layer, the trench having a sidewall formed in the mask layer, the sidewall surrounding an exposed portion of the substrate; and (c) depositing a core of 2D material on the exposed portion of the substrate and growing the core as a single domain monolayer of 2D material wherein the growth and deposition of the core are carried out at a temperature of less than 705 DEG C.

The invention discloses an atomic-scale width-adjustable NiI2 nanobelt as well as a preparation method and application of the atomic-scale width-adjustable NiI2 nanobelt. The preparation method comprises the following steps: providing a single-walled carbon nanotube with the diameter of 1-2.7 nm, opening and purifying the single-walled carbon nanotube to obtain an opened and purified single-walled carbon nanotube; a mixture containing an open and purified single-walled carbon nanotube and NiI2 powder is placed in a reaction chamber of a vacuum chemical vapor transport system, heating reaction is performed, so that spontaneous assembly of a NiI2 one-dimensional structure is induced in a one-dimensional cavity of the single-walled carbon nanotube, and the single-layer atomic-scale width-adjustable NiI2 nanobelt is obtained. According to the preparation method provided by the invention, the one-dimensional cavity of the single-walled carbon nanotube is used as a material growth space, spontaneous assembly of a NiI2 one-dimensional structure can be effectively induced, the atomic-scale width-adjustable NiI2 nanobelt is prepared, and the preparation method plays an important role in revealing a one-dimensional magnetic transformation mechanism and developing a new-generation spintronics device.

The present application relates to a kind of in-situ optical microscopic imaging high temperature growth system, the system includes: high temperature growth furnace, high temperature microscopic objective lens built in the high temperature growth furnace, very narrow single-wavelength incoherent light source and observation device.Therein, high temperature microscopic objective lens built in the high temperature growth furnace uses high-temperature-resistant material, need not cooling to work normally under high temperature environment;The single-wavelength characteristic of very narrow single-wavelength incoherent light source avoids chromatic aberration, can be close to diffraction limit to imaging resolution, and the incoherence of very narrow single-wavelength incoherent light source can avoid shot noise, to obtain clear imaging picture, so that the system can realize 20-1200 ℃ high temperature under the in-situ optical microscopic imaging of material growth process, to obtain the nucleation rate of material growth process, growth rate, material morphology and structure etc.Experimental data, it has extremely important significance to material high temperature growth research.

The application discloses a polarization light modulator based on a metamaterial structure and a preparation method thereof. The polarization modulator comprises a metamaterial structure, an ITO conductive layer, a P-type electrode layer, an N-type electrode layer and a light emitting device. The ITO conductive layer is arranged on the surface of the light emitting device, and the metamaterial structure and the P-type electrode layer are arranged on the ITO conductive layer. The metamaterial structure comprises two metal micro-nano structure layers and a dielectric isolation layer, and the dielectric isolation layer is arranged between the two metal micro-nano structure layers. The application is based on the idea of polarization asymmetric conversion, and can convert the energy of a certain linearly polarized light into linearly polarized light orthogonal to the linearly polarized light. The application can break through the bottleneck of traditional 50% energy loss. In addition, the preparation method is based on material growth and integrated circuit technology, and has the advantages of simple device preparation, easy integration and low cost.

The invention relates to a laser manufacturing method, which comprises the following steps of S1, adopting an aluminum-containing semiconductor material as a butt-joint growth mask, and performing butt-joint growth; s2, after butt-joint growth is completed, removing the butt-joint growth mask containing aluminum in the reaction chamber; s3, after the butt-joint growth mask is removed, epitaxial growth continues to be carried out in the reaction chamber; and S4, after the epitaxial growth is finished, carrying out subsequent manufacturing to obtain the laser. The invention also provides a laser which is manufactured by the laser manufacturing method. According to the method, the aluminum-containing semiconductor material is used as the butt-joint growth mask, the performance and yield of the laser are improved, after butt-joint growth is completed, the aluminum-containing butt-joint growth mask is removed through in-situ corrosion in the reaction chamber, subsequent epitaxial growth is directly carried out, the wafer can be prevented from being exposed to the external environment in the transfer process by adopting the mode, and the yield of the laser is improved. Meanwhile, the method can be seamlessly connected with a material growth step, so that the process steps are reduced, and the process time is shortened.