Double-layer airflow quartz fairing reaction chamber apparatus for MOCVD system

Abstract

The invention discloses a reaction chamber device with double-layer airflow and a quartz false ogive that is used for a MOCVD system, comprises a horizontal quartz tube, metallic flanges that are arranged at two ends of the quartz tube and used for sealing the two ends of the quartz tube, the rectangle quartz false ogive and a substrate that are arranged inside the quartz tube, and an inclined plane lining that is placed on the substrate and arranged inside the quartz false ogive, and the arrangement of the quartz false ogive and the inclined plane of the substrate satisfies the ideal hydrokinetic model of the chemical gas phase reaction of the MOCVD. By utilizing the characteristics of simple design, good bearing pressure ability and convenient sealing and matching of the cylindrical quartz tube as well as the rectifying action of the reaction chamber with the rectangle false ogive, and combing with other MOCVD technical equipments, the invention forms the MOCVD system with the reaction chamber with the double-layer airflow and the quartz false ogive, which has simple structure, low production cost and even material growth; the quartz false ogive that has convenient disassembly and assembly is convenient for cleaning the reaction chamber, and the crystal growth pollution is reduced, thus obtaining crystal materials with high quality; the reaction chamber device with the double-layer airflow and the quartz false ogive can further be used for the CVD and MOCVD of the growth of other semiconductor materials such as Si, GaAs, InP and GaN, etc., as well as horizontal reaction systems of HVPE, etc.

Description

technical field [0001] The invention belongs to the technical field of epitaxial growth equipment for III-V compound semiconductor materials, and in particular relates to a double-layer gas flow quartz fairing reaction chamber device for an MOCVD system. Background technique [0002] Group III-V compound semiconductor materials represented by GaN have extremely excellent optical, electrical, and thermodynamic properties: a wide band gap (314eV), can emit light effectively at a wavelength of 370nm, and can produce red to purple visible light through doping ; High electrical conductivity and thermal conductivity; high hardness, close to sapphire; high decomposition temperature, which can reach above 1000 ℃; hardly corroded by any acid, good chemical stability. Due to the above characteristics, this series of materials has broad application prospects in high-temperature and high-power microelectronic devices, blue-green and purple light-emitting devices, information display sto...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is: the reaction chamber device of the existing MOCVD ...

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