9results about How to "Reduce blocking effect" patented technology

The invention discloses a secondary battery, a battery pack and a power utilization device, the secondary battery has a first direction and a second direction which are intersected, the secondary battery comprises a shell, an electrode assembly and a top cover assembly, the shell is provided with a containing cavity, the electrode assembly is arranged in the containing cavity, the top cover assembly comprises a top cover piece, a lower insulating part and an electrode terminal, the top cover piece is connected with the shell, and the lower insulating part is arranged in the top cover piece. The top cover plate is provided with a first liquid injection hole; the lower insulating part is connected to one side, facing the electrode assembly, of the top cover plate, and the electrode terminal penetrates through the top cover plate and the lower insulating part; the lower insulating part comprises a body and a turbulent flow part, and the body is provided with a second liquid injection hole communicated with the first liquid injection hole; the turbulent flow part is connected to the side, away from the top cover piece, of the body, the turbulent flow part and the electrode terminal are arranged at an interval, a liquid outlet is formed in the side, facing the electrode terminal, of the turbulent flow part, and the liquid outlet communicates with the second liquid injection hole; and along the second direction, the minimum distance between the liquid outlet and the electrode terminal is L1, the size of the top cover plate is L2, and L1 / L2 is greater than or equal to 0.004 and less than or equal to 0.5.

The invention discloses a semiconductor device and an etching method and a preparation method thereof, a first etching process is adopted to etch a dummy gate to remove the dummy gate of a first thickness and retain the dummy gate of a second thickness, the first thickness is greater than the second thickness, a second etching process is adopted to etch the dummy gate of the second thickness, and the second thickness is greater than the second thickness. The second etching process comprises a gasification process, the gasification process is used for converting the dummy gate with the second thickness into a gaseous substance and enabling the gaseous substance to escape, and the corrosion of the second etching process, such as the gasification process, to the barrier layer is smaller than the corrosion of the first etching process, such as a dry etching process or a wet etching process, to the barrier layer; therefore, the damage of etching of the dummy gate to the barrier layer can be reduced, the metal blocking capability of the barrier layer cannot be obviously reduced, the probability that metal in the metal gate is diffused to the gate dielectric layer with a high dielectric constant can be reduced, and the reliability of the semiconductor device can be ensured.

The invention discloses a rotary vane type aerodynamic booster, which belongs to the technical field of fluid machinery and comprises a fixing system, a vertical rotating system, a horizontal rotating system, a synchronous transmission system, a disc system, an upper shell system and a lower shell system. The fixing system is used for overall fixing; the synchronous transmission system is meshed with the first bevel gear through the second bevel gear, and the oblique gear is meshed with the special-shaped gear of the horizontal rotating body, so that the vertical rotating system and the horizontal rotating system synchronously rotate at a fixed proportion, and the blocking effect on an inlet is small; meanwhile, the vertical rotating system and the horizontal rotating system do uniform circular motion along respective rotating shafts, and a periodic extrusion space is formed between the two systems, so that higher pressure is generated in the space between the vertical rotating system and the horizontal rotating system, and higher aerodynamic force is generated.

The utility model relates to a waste heat recycling device utilizing industrial steam condensate water, which comprises a cooling water tank and a plurality of heat exchange group plates, the plurality of heat exchange group plates are installed along the length direction of the cooling water tank in an interception mode, vertical medium flow channels are arranged in the heat exchange group plates, and the upper ends and the lower ends of the heat exchange group plates are exposed outside the cooling water tank. Flow channel openings communicated with the medium flow channels are formed in the upper ends and the lower ends of the heat exchange group plates, and every two adjacent heat exchange group plates are connected through bent pipes installed at the flow channel openings; and each heat exchange group plate is provided with a through hole which is vertical to the medium flow channel and is not communicated with the medium flow channel. The effect of multiple times of heat exchange in cooling water is achieved. The communicating pipes are installed on the heat exchange assembly plates to form the through holes penetrating through the heat exchange assembly plates, the blocking effect of the heat exchange assembly plates on cooling water flow is reduced, the flowability of cooling water is enhanced, a high-temperature area in the cooling water is eliminated, the contact area is increased in cooperation with the communicating pipes, and therefore the heat exchange efficiency is improved, and recovery of waste heat of condensate water is achieved.

The utility model discloses a kind of SCR denitration devices, belong to solve the problem of scratch to catalyst in the process of ash removal, solve the problem of scratch to catalyst in the process of ash removal, the technical scheme of solving this problem mainly includes rotary kiln, preheater, ammonia injection system and SCR reaction tower, preheater is located above rotary kiln, SCR reaction tower is equipped with flue gas pipeline between preheater, SCR reaction tower is equipped with mounting bracket, SCR reaction tower outside is equipped with fixing frame, mounting bracket is equipped with ash removal pipe, ash removal pipe is equipped with ash removal harrow, ash removal harrow is equipped with nozzle, fixing frame is equipped with feeding mechanism and air blower, one end of ash removal pipe extends to SCR reaction tower outside and is connected with feeding mechanism, feeding mechanism drives ash removal harrow reciprocating motion by ash removal pipe, ash removal pipe is equipped with anti-blocking fan to prevent nozzle from entering dust and being blocked during ash removal harrow retraction process.The utility model mainly guarantees ash removal effect while reducing damage to catalyst, and then ensure denitration effect.

The application relates to a deep ultraviolet light emitting diode device structure and a preparation method for realizing hole acceleration, belonging to the field of semiconductor photodiodes, and comprising a substrate, a buffer layer and an n-type semiconductor electron injection layer from bottom to top; a plurality of quantum well active regions, a p-type AlGaN electron blocking layer, a p-type AlGaN insertion layer, an n-type AlGaN insertion layer, a p-type semiconductor hole injection layer, a p-type contact layer and a p-type electrode are sequentially arranged above one side of the n-type semiconductor electron injection layer; and an n-type electrode is arranged above the other side; the Al component percentage of the p-type AlGaN insertion layer and the n-type AlGaN insertion layer is higher than that of the p-type AlGaN hole injection layer and lower than that of the p-type AlGaN electron blocking layer. The application introduces the insertion layer, can improve the kinetic energy of holes, increases the injection of holes, optimizes the Al component of the structure, reduces the valence band offset between the electron blocking layer and the hole injection layer, and weakens the hole blocking effect.

The utility model belongs to the technical field of riverway water body remediation, and particularly discloses a floating wetland system for riverway water body purification, which comprises a floating bed body and a microporous aeration device, the floating bed body comprises a floating bed frame and a support net arranged in the floating bed frame, and floating bed plants are planted in meshes of the support net; a through hole is formed in the middle of the floating bed body, the microporous aeration device is embedded in the through hole, and the microporous aeration device is connected with the floating bed frame. The air permeability of the floating bed can be improved, and the problem of shading is reduced.

The application relates to the field of semiconductor wafer testing, and provides a nonvolatile memory bit process optimization method and device, which comprises the following steps: inputting ultra-pure dry air between an etching process and an ion implantation process of a device unit region of a Norflash; wherein, the waiting time from the etching to the ion implantation process is controlled. The above process optimization effectively reduces defects of the Norflash in Celletch-CellIMP, reduces the blocking effect of ions during IMP implantation, improves the VT margin tailing distribution problem, improves the tailing die VT initial value, and thus reduces the VT margin failure.