4results about How to "Reduce blocking effect" patented technology

The utility model relates to a waste heat recycling device utilizing industrial steam condensate water, which comprises a cooling water tank and a plurality of heat exchange group plates, the plurality of heat exchange group plates are installed along the length direction of the cooling water tank in an interception mode, vertical medium flow channels are arranged in the heat exchange group plates, and the upper ends and the lower ends of the heat exchange group plates are exposed outside the cooling water tank. Flow channel openings communicated with the medium flow channels are formed in the upper ends and the lower ends of the heat exchange group plates, and every two adjacent heat exchange group plates are connected through bent pipes installed at the flow channel openings; and each heat exchange group plate is provided with a through hole which is vertical to the medium flow channel and is not communicated with the medium flow channel. The effect of multiple times of heat exchange in cooling water is achieved. The communicating pipes are installed on the heat exchange assembly plates to form the through holes penetrating through the heat exchange assembly plates, the blocking effect of the heat exchange assembly plates on cooling water flow is reduced, the flowability of cooling water is enhanced, a high-temperature area in the cooling water is eliminated, the contact area is increased in cooperation with the communicating pipes, and therefore the heat exchange efficiency is improved, and recovery of waste heat of condensate water is achieved.

The utility model discloses a kind of SCR denitration devices, belong to solve the problem of scratch to catalyst in the process of ash removal, solve the problem of scratch to catalyst in the process of ash removal, the technical scheme of solving this problem mainly includes rotary kiln, preheater, ammonia injection system and SCR reaction tower, preheater is located above rotary kiln, SCR reaction tower is equipped with flue gas pipeline between preheater, SCR reaction tower is equipped with mounting bracket, SCR reaction tower outside is equipped with fixing frame, mounting bracket is equipped with ash removal pipe, ash removal pipe is equipped with ash removal harrow, ash removal harrow is equipped with nozzle, fixing frame is equipped with feeding mechanism and air blower, one end of ash removal pipe extends to SCR reaction tower outside and is connected with feeding mechanism, feeding mechanism drives ash removal harrow reciprocating motion by ash removal pipe, ash removal pipe is equipped with anti-blocking fan to prevent nozzle from entering dust and being blocked during ash removal harrow retraction process.The utility model mainly guarantees ash removal effect while reducing damage to catalyst, and then ensure denitration effect.

The application relates to a deep ultraviolet light emitting diode device structure and a preparation method for realizing hole acceleration, belonging to the field of semiconductor photodiodes, and comprising a substrate, a buffer layer and an n-type semiconductor electron injection layer from bottom to top; a plurality of quantum well active regions, a p-type AlGaN electron blocking layer, a p-type AlGaN insertion layer, an n-type AlGaN insertion layer, a p-type semiconductor hole injection layer, a p-type contact layer and a p-type electrode are sequentially arranged above one side of the n-type semiconductor electron injection layer; and an n-type electrode is arranged above the other side; the Al component percentage of the p-type AlGaN insertion layer and the n-type AlGaN insertion layer is higher than that of the p-type AlGaN hole injection layer and lower than that of the p-type AlGaN electron blocking layer. The application introduces the insertion layer, can improve the kinetic energy of holes, increases the injection of holes, optimizes the Al component of the structure, reduces the valence band offset between the electron blocking layer and the hole injection layer, and weakens the hole blocking effect.

The application relates to the field of semiconductor wafer testing, and provides a nonvolatile memory bit process optimization method and device, which comprises the following steps: inputting ultra-pure dry air between an etching process and an ion implantation process of a device unit region of a Norflash; wherein, the waiting time from the etching to the ion implantation process is controlled. The above process optimization effectively reduces defects of the Norflash in Celletch-CellIMP, reduces the blocking effect of ions during IMP implantation, improves the VT margin tailing distribution problem, improves the tailing die VT initial value, and thus reduces the VT margin failure.