This application relates to the field of terahertz emission, specifically providing a low-frequency terahertz emitting device and its fabrication and usage methods. The device includes an excitation material, which is a
heterojunction formed by a
perovskite layer and a high-resistivity
silicon layer. It also includes a first
metal layer disposed outside the
perovskite layer and a second
metal layer disposed outside the high-resistivity
silicon layer. During fabrication, a
perovskite solution is first spin-coated onto the high-resistivity
silicon to form a perovskite layer, and finally, the
metal layers are deposited by vapor deposition. During use, a
femtosecond laser is incident from one side of the perovskite layer, and a
voltage is applied between the first and second metal
layers. The applied
electric field of this application enhances the interfacial
band bending and widens the depletion layer, while simultaneously forming a stable
potential gradient in the thickness direction. This makes the
transient current change smoother, increases the
time constant, and reduces the rate of change of the
transient current over time, thereby increasing the proportion of the low-frequency terahertz component and achieving enhanced low-frequency
radiation.