65 results about "Conduction loss" patented technology

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

This application provides a Saber-based inverter simulation method, which includes: generating an initial simulation test circuit; performing time-domain simulation based on the initial simulation test circuit to obtain the total loss, switching loss, and conduction loss of the power device model; transforming the initial simulation test circuit to obtain a replacement simulation test circuit, and performing sensitivity testing on the obtained replacement simulation test circuit based on the total loss, switching loss, and conduction loss of the power device model to obtain the sensitivity of each initial curve; and adjusting the power device design based on the obtained total loss, switching loss, conduction loss of the power device model, and the sensitivity of each original curve. This method can guide the design of power devices and other parameters in the circuit, effectively improving R&D efficiency and quickly achieving the goals of improving inverter efficiency, reducing losses, and meeting system efficiency requirements.

The utility model relates to circuit technical field, concretely relates to low conduction loss's MOS pipe synchronous rectification power management circuit. Including: at least one synchronous rectification MOS pipe for rectifying power supply, the synchronous rectification MOS pipe has very low on -resistance, voltage detection module is connected to the drain and source of synchronous rectification MOS pipe for real -time detection synchronous rectification MOS pipe's drain -source voltage, logic control module is with voltage detection module electricity connection, receives the drain -source voltage signal from voltage detection module, the logic control module according to the preset voltage threshold condition, when the detected drain -source voltage is lower than the opening threshold value, the application can according to application scene, load variation and environmental factor dynamic optimization MOS pipe working state.

The application relates to the technical field of gate driving, and discloses an enhanced GaN power device crosstalk suppression driving circuit and method.The circuit comprises a pulse generation module, a driving signal generation module and a negative voltage clamping module.The pulse generation module generates three-way PWM signals;the negative voltage clamping module utilizes a monostable trigger circuit to process an upper tube control signal to generate a clamping trigger signal, and constructs a negative voltage generation circuit through a driving chip, a capacitor and a MOS tube; and the driving signal generation module combines the above signals into a multi-level driving signal to act on a lower tube gate.The application effectively suppresses false conduction by utilizing negative voltage when positive crosstalk occurs, rapidly clamps the gate voltage to 0V after the crosstalk is over, so as to adapt to different dead time applications and avoid threshold voltage drift caused by long-term negative voltage; and the gate-source voltage is clamped to a low positive level in the dead time, so as to significantly reduce the reverse conduction loss of the GaN device.Only a small number of devices are used to realize high reliability, low loss and crosstalk suppression.

The full direct current offshore wind power system based on network type direct current fan relates to the field of model construction of full direct current offshore wind power system. The existing full direct current OWP system has the problems of too large volume and weight. The full direct current offshore wind power system based on network type direct current fan and uncontrolled direct current transformer is realized, the uncontrolled direct current transformer (U-DCT) is operated in the open loop control mode of the maximum modulation ratio, the internal alternating current voltage can be maximized, the sub-module capacitor value and conduction loss are reduced, and the economy of the full direct current offshore wind power system is effectively improved; the use weight and installation volume of the capacitor device are greatly reduced; the application of the full direct current offshore wind power system is mainly used in the field of offshore wind power.

The utility model discloses a low -power feedback switching power supply relates to the field of electronic circuit. Including input module, control module, voltage transformation module, feedback module and output module. Input module contains lightning protection temperature control and filter rectifier circuit, realizes the lightning protection, filter and rectification to external power supply, control module integration starts, the feedback of original side, overcurrent monitoring and switching circuit, is the control core of power supply, voltage transformation module passes through transformer and peak current absorption circuit, realizes the safe transformation of voltage, feedback module utilizes the combination of photocoupler and voltage stabilizer, real -time acquisition output voltage and feedback to control module, output module adopts synchronous rectifier circuit, and cooperates filter capacitor and common mode inductance, realizes high -efficient rectification and filter. The utility model discloses through synchronous rectification technology reduction conduction loss, combines the adaptive feedback system fast adjustment duty cycle, and the power efficiency and output voltage stability are improved significantly, have high reliability, low loss, response speed fast and so on advantage.

This invention discloses a nested TLVR multiphase voltage regulator and its control method to solve the problems of large size of coupling transformers, high AC magnetic flux density and core loss, long interconnection lines of coupling windings, complex interconnection of coupling windings, and high conduction loss of interconnection circuits in existing TLVR multiphase voltage regulators. Through the nested TLVR structure, this invention allows the coupling transformer to be interconnected only with adjacent or nearby coupling transformers, reducing the complexity of coupling transformer winding interconnection, the length of interconnection circuits, and losses. This invention can also effectively reduce the inductance of the coupling transformer itself, reduce the peak AC magnetic flux and core loss of the coupling transformer core, thereby effectively reducing the size and losses of the coupling transformer. This invention provides a simpler, easier-to-implement, more efficient, and higher power density solution for multiphase voltage regulators supplying power to various computing processor chips.

This application provides a method for fabricating a fast recovery diode, a fast recovery diode, and an electronic device, relating to the field of semiconductor technology. The method for fabricating a fast recovery diode includes: providing a substrate, the substrate including a first surface and a second surface disposed opposite to each other; performing ion doping treatment on the substrate to form ion-doped regions on the first surface and the second surface; etching the first surface based on a predetermined etching region to form a first groove; wherein the depth of the first groove is greater than the thickness of the ion-doped region; the predetermined etching region is located at the center of the first surface; forming a passivation layer in the first groove; and performing metal evaporation on the first surface to form a first metal layer. This method not only reduces the conduction loss of the fast recovery diode, improves energy conversion efficiency, effectively suppresses reverse current, and reduces electromagnetic interference, but also enhances its resistance to avalanche breakdown energy and surge capability.

A semiconductor device has both low conduction loss and low switching loss, and uniformity of heat generation during operation. The semiconductor device has high and low conduction regions in one semiconductor chip, and includes: in the low conduction region, a first carrier control gate connected to a first gate electrode, and a switching gate connected to a second gate electrode controllable independently of the first gate electrode; and in the high conduction region, a second carrier control gate connected to a third gate electrode. In the semiconductor device, of the first carrier control gate and the switching gate, the first carrier control gate is placed at an end portion of the low conduction region on a boundary side with the high conduction region, and a concentration of carriers that can be accumulated at conduction time is lower in the low conduction region than in the high conduction region.

A method for manufacturing a power inverter may include determining a plurality of electrical characteristics of each of a first power switch die and a second power switch die. The plurality of electrical characteristics includes at least: a conduction loss and a switching loss. The method further may include manufacturing the power inverter using at least the first power switch die and the second power switch die based at least in part on the plurality of electrical characteristics of each of the first power switch die and the second power switch die.

This invention discloses a method for fixed-frequency control of the sub-peak current in a four-switch buck-boost converter, ensuring that the magnitude of the inductor negative current is always maintained at the minimum value required for soft switching. The control strategy only requires sampling the input and output voltages. At low power, it operates in DCM mode, where the sub-peak inductor current is controlled to equal the minimum value required for soft switching. When the power exceeds the critical value of DCM mode, the FSBB operates in CCM mode, maintaining a fixed frequency throughout the entire process. This invention enables soft switching of all switching transistors and controls the inductor current, reducing the switching and conduction losses of the converter.

The embodiment of the application provides a battery charger based on a continuous variable-ratio capacitor converter, a method and a chip, and belongs to the technical field of power electronics. The charger comprises an input port, an output port, four flying capacitors, a switch network composed of seventeen switches and a controller. The switch network adopts a network connection topology, so that each two flying capacitors are directly connected. The controller executes a predetermined timing control strategy, dynamically reconfigures the capacitor network by periodically operating all switches, so that continuous and efficient voltage conversion is realized within a preset voltage conversion ratio range. By optimizing the topology and control, the number of series conduction switches on the main energy transmission path is significantly reduced from eight in the prior art to five, thereby greatly reducing the path impedance and conduction loss. The actual measurement shows that under the condition of input 12V and output 4.2V, the peak conversion efficiency can reach 92%, and the efficiency remains above 90% in the output current range of up to 3.3A.

The utility model belongs to temperature measurement technical field provides a kind of portable temperature measuring device, including shell, is provided with the installation part and temperature measuring part being arranged at included angle;Temperature measurement module is set in installation part, temperature measurement module includes temperature measurement column, temperature measurement column is perpendicular to temperature measuring part, and stretches to temperature measuring part outside;Clamping piece with rotating arm and clamping arm, rotating arm is movably connected on installation part, for driving clamping arm to approach or away from temperature measuring part.Compared with prior art, the utility model has the advantages that by temperature measurement column, the surface of the measured object can be directly and stably contacted, heat conduction loss is reduced, temperature measurement accuracy and response speed are improved;At the same time, by the linkage of rotating arm and clamping arm, the automatic reset function of torsion spring is matched, so that the clamping arm can be automatically attached to the measured object, rapid clamping and automatic positioning are realized, the measured object is effectively ensured to be stably placed and accurately contacted with the temperature measurement column, and the consistency and repeatability of temperature measurement are improved.

The present application relates to the technical field of data processing, in particular to a kind of aluminum mould lightweight method and system for building space.The present application obtains actual section stiffness and edge profile height, utilizes actual section stiffness and edge profile height to measure deformation flattening energy demand;Further analyze section stiffness mutation characteristics and edge bending loss characteristics, build conduction loss factor, through the path integral calculation of bidirectional path scanning of conduction loss factor, and then utilize the path integral of bidirectional path scanning to measure effective locking energy supply;Through deformation flattening energy demand and effective locking energy supply calculation gap closure deficit index, and then identify the true defect of aluminum mould edge deformation, and the true defect of aluminum mould edge deformation is repaired with light weight.The present application considers the stiffness non-uniformity of aluminum mould and the effect of locking force conduction attenuation, improves the accuracy of detecting the true defect of aluminum mould edge deformation.

This invention discloses an adaptive control system for an adaptive zero-voltage switching Buck converter with a wide input range, belonging to the field of high-power-density power converters and power management technology. The system includes a control circuit and a switch drive circuit. The switch drive circuit includes high-side, low-side, and clamping switch drive circuits. The control circuit includes an inductor current sampling module, an output voltage sampling module, a compensation module, a comparator, two timers, three adaptive dead-time modules, an adaptive valley current control module, and three flip-flops. This invention accurately calculates the optimal valley current to achieve ZVS control under wide input conditions, balancing switching and conduction losses under wide input conditions, effectively improving the converter's switching frequency and conversion efficiency, while reducing electromagnetic interference. It provides a practical solution to meet the needs of VRMs in high-power-density, high-frequency, and wide-input-voltage application scenarios.

The application discloses a trench type MOSFET power device cell structure, at least one trench is arranged in the cell structure, a shielding area is arranged at the bottom of the trench, the trench is physically connected with deep well areas located at two sides of the cell, the shielding area and the deep well area are electrically connected, and the shielding area and the deep well area have the same conductive type. The structure can realize reliable trench bottom shielding area grounding without affecting the current conduction area of the device, greatly reduces the conduction loss, and has simple process and high realizability.

The utility model relates to uninterrupted power supply technical field discloses a UPS uninterrupted power supply control management system, include: rectifier module, inverter module static switch module, power management module, power control module. Utilize three level operational amplifier feedback network and dynamic compensation resistance, when input voltage fluctuation, through operational amplifier real -time adjustment PWM duty cycle, the precision of stability is improved obviously, and utilize diode D1 to suppress reverse current, reduce the interference of power grid harmonic to charging circuit, chip IC1 can drive two MOS tubes independently, and two MOS tubes parallel connection can reduce the conduction loss, combine adjustable resistance regulation output frequency, realize the seamless switching of high frequency and low frequency. The field effect transistor is connected with the triode and constitutes the composite switch, eliminates switching surge with delay circuit (C13 and R23), and obviously shortens switching time, and capacitor C13 can absorb switching transient peak, avoids the restart of load equipment.

This invention discloses a hybrid modulation method for a four-switch Buck-Boost converter, relating to the field of power electronic converter control technology. Specifically, it includes: acquiring the converter's load state parameters and comparing them with a switching threshold determined based on a loss balance point. When the load is greater than or equal to the threshold, a four-segment modulation mode is used; when the load is less than the threshold, a five-segment modulation mode is used. In the five-segment modulation mode, when the inductor current drops to zero, the third switch is turned off and the fourth switch is turned on to enter a zero-current holding stage. After this stage, the second and third switches are turned on to establish a reverse current. This aims to eliminate free circulating current when the load is less than the threshold, reducing conduction losses and copper losses while ensuring zero-voltage turn-on, thereby improving converter operating efficiency.

This invention belongs to the field of motor controllers, specifically relating to a thermal resistance testing method, system, device, and storage medium. The method includes: acquiring test thermal resistance parameters; obtaining the conduction loss and switching loss corresponding to the test thermal resistance parameters based on the test thermal resistance parameters and a thermal resistance loss model; calculating the total loss; inputting the total loss, power loss parameters, and thermal resistance temperature test parameters into a junction temperature testing system to perform a junction temperature experiment, obtaining adjusted power loss parameters, adjusted thermal resistance temperature test parameters, thermal resistance junction temperature, and total loss, forming a junction temperature database; matching the current power loss parameters and current thermal resistance temperature test parameters with the junction temperature database to obtain the current thermal resistance junction temperature and current total loss, and calculating the current thermal resistance by combining this with the current coolant flow rate. This application has the advantage of being unaffected by the controller's reception and capable of calculating the thermal resistance junction temperature under any operating condition.

This invention relates to the field of semiconductor technology, specifically to a fast soft recovery diode and its manufacturing method. The diode includes an N+ substrate region, an N buffer region, an N- drift region, a P- anode region, and a P+ anode contact region. The N- drift region has a stepped concentration layer, which includes at least two layers, N1 and N2, arranged from bottom to top. The doping concentration of the N2 layer is higher than that of the N1 layer. The surface doping concentration of the P+ anode contact region is greater than that of the P-anode region, and the surface doping concentration of the P-anode region is greater than that of the N2 layer. The N- drift region has a pre-defined depletion layer edge region, which has at least one P+ buried layer located below and / or to the side of the P+ anode region in the vertical direction. This improves the diode's fast soft recovery capability, effectively reduces device conduction losses and switching losses, and suppresses electromagnetic interference, thereby improving the overall system efficiency, power density, and reliability.

The application relates to the technical field of dielectric thin films, and discloses a polypropylene dielectric thin film based on fluorinated polypropylene particles, a preparation method and application, the preparation method comprises the following steps: step 1, mixing polypropylene and surface fluorinated polypropylene to form a mixture; the polypropylene is 70-95 parts, the surface fluorinated polypropylene is 5-30 parts, and the total amount of the mixture is 100 parts; step 2, the mixture obtained in step 1 is subjected to melt blending and hot pressing to obtain a to-be-stretched sheet; and step 3, the to-be-stretched sheet is subjected to bidirectional synchronous biaxial stretching to obtain the required dielectric thin film; the fluorinated polypropylene particles are mixed with the polypropylene matrix, and the phase boundary or agglomeration phenomenon can be obviously avoided; after the fluorine groups are introduced, the fluorine groups can induce stronger orientation polarization under the action of an alternating electric field due to the high dipole moment of the fluorine groups, electronic traps are formed on the surface and in the thin film, and the dielectric constant of the thin film is effectively improved and the conduction loss is inhibited.

This invention provides a three-port converter and a three-port power conversion system, relating to the field of circuit technology. The converter can bidirectionally transfer power between three ports, each of which can operate as a power source or load. It includes a primary-side switching network at the first port for driving a transformer, and secondary-side resonant tank circuits at the second and third ports. The converter achieves electrical isolation and provides voltage gain. The system includes a controller configured to monitor the voltage and power at each port and generate gate drive signals to regulate power transfer between the input port and at least one output port via switching frequency control. A cross-regulation function allows the voltage at one port to be fine-tuned to a target value while maintaining the voltage at another port at a substantially constant state. The converter can employ a variant design of a multiphase transformer to distribute conduction losses and thermal stress, and improve power handling capacity.

The application provides a high-entropy alloy composite material applied to microwave absorption and a preparation method thereof, relates to the technical field of electromagnetic wave absorption, and constructs a composite structure by introducing high-entropy alloy nanoparticles into a three-dimensional framework of graphene material, forms high-entropy alloy nanoparticles through a heat treatment process, and further composites the high-entropy alloy nanoparticles with the graphene material to construct a three-dimensional network material system with rich interface structures and multistage pores; the structure can not only provide a good conductive network and multiple scattering paths, but also can significantly improve the electromagnetic wave absorption performance of the material through the synergistic effect of various mechanisms such as interface polarization, conduction loss and magnetic loss; the problems that the current single graphene material is prone to strong dielectric loss, easy to cause impedance mismatch imbalance, thereby limiting the further improvement of the wave absorption performance, and the traditional high-entropy alloy is usually prepared by vacuum melting or mechanical alloying, and has problems such as large particle size, poor dispersity and difficulty in constructing a porous structure are solved.

This disclosure relates to systems and methods for adaptive switching control in power conversion systems. In one embodiment, the technology provides an apparatus comprising a first comparator coupled to an input terminal and configured to compare an input signal with a first threshold and generate a first signal in response to the input signal exceeding the first threshold. The apparatus further comprises a first circuit coupled to the first comparator. The first circuit is configured to initiate a first interval in response to the first signal. A second comparator is configured to generate a second signal based on a comparison between the input signal and the second threshold. The first circuit is configured to adjust the first interval based on the second signal. By adaptively adjusting the control timing based on signal conditions, the apparatus enables improved switching performance and reduced conduction losses in power control applications. Other embodiments also exist.

This invention discloses a trench-type MOSFET cell structure, comprising: a gate trench, an auxiliary source trench, and an N-type MOSFET. + Source region, P-type base region, P + Buried layer, N drift layer, N + Substrate, wherein N + The source region is located above the P-type base region and is partially enclosed by the P-type base region. The P-type base region is located above the N-drift layer, and the N-drift layer is located above the N-type base region. + Above the substrate, a gate trench vertically penetrates N. + The source region and P-type base region extend into the N-drift layer, and the auxiliary source trench vertically penetrates the P-type base region and extends into the N-drift layer. + The buried layer is located beneath the gate trench and auxiliary source trench and is encased by an N-drift layer, P + The buried layer located below the gate trench is discontinuous in the direction parallel to the gate trench and is spatially periodically distributed. The bottom of the auxiliary source trench is adjacent to the P... + The buried layer makes direct contact, and an ohmic contact metal layer is provided at the bottom of the auxiliary source trench. A diode is integrated into the sidewall of the auxiliary source trench. This invention increases the conductivity of the device and reduces conduction losses.

The utility model discloses a kind of circuit for simultaneously controlling positive and negative power supply on-off, belong to computer power supply and server power supply technical field, including power on-off control module, positive power module and negative power module;Power on-off control module is electrically connected with the starting control signal of outside, power on-off control module is electrically connected with positive power module and negative power module, and the positive voltage power supply input end of positive power module is electrically connected with the external load electric appliance;Negative power module is electrically connected with the negative voltage power supply input end of external load electric appliance.Through power on-off control module receives starting control signal, simultaneously utilize the collaborative design to positive power module and negative power module, utilize MOS tube to realize the synchronous switch control to positive and negative power supply, there is no mechanical contact of electromagnetic relay, just avoid the problem of mechanical contact contact bad, simultaneously, the working current of MOS tube is greater, conduction loss is lower, can effectively reduce power consumption.

A switching loss measuring method and a measuring device, wherein the switching loss measuring method is to perform a switching timing measuring procedure on an input voltage inputted from a main voltage acquisition channel and an input current from a main current acquisition channel to generate a measuring time data; to calculate a switching loss data from the main voltage acquisition channel and the main current acquisition channel; to acquire the input voltage corresponding to the measuring time data and the input current from an auxiliary voltage acquisition channel to calculate a conduction loss data; the input voltage acquired from the auxiliary voltage acquisition channel has a better voltage resolution, so that the calculation of the conduction loss data is more accurate, and a switching loss data calculated from the switching loss data and the conduction loss data is also more accurate.

The application relates to the technical field of room-temperature magnetic refrigeration, in particular to an active magnetic regenerator based on a composite intercalation structure and a room-temperature magnetic refrigeration system. The active magnetic regenerator comprises a regenerator shell and a magnetocaloric unit, the magnetocaloric unit is arranged in the interior of the regenerator shell, and comprises a plurality of composite intercalation magnetocaloric plates; the plurality of composite intercalation magnetocaloric plates are arranged at intervals, and a fluid flow channel is formed between two adjacent composite intercalation magnetocaloric plates. By inserting a low-thermal-conductivity insulating layer into the magnetocaloric plate and arranging a high-thermal-conductivity layer at the end of the plate, a composite intercalation magnetocaloric plate structure is formed, the anisotropic heat transfer characteristic of the ideal regenerator, i.e. the radial high-thermal-conductivity and the axial low-thermal-conductivity, is realized without depending on special materials, the axial heat conduction loss of the regenerator is significantly reduced, the utilization rate of the magnetocaloric effect is improved, and the refrigeration performance of the regenerator is improved.

The application provides a power device, which comprises an active region, and the active region has a plurality of cell structures arranged in parallel. A single cell structure comprises a P-type substrate, an epitaxial layer, three trenches, a gate oxide layer, a polysilicon column, an N-type emitter region, an emitter metal layer and an insulating layer. The epitaxial layer is formed on the P-type substrate, and the epitaxial layer comprises an N-type epitaxial layer and a P-type body region formed on the top of the N-type epitaxial layer. The three trenches extend downward from the surface of the epitaxial layer into the N-type epitaxial layer, and the gate oxide layer is formed on the surface of the epitaxial layer and the wall surface of the trenches. The polysilicon filled in the three trenches forms three polysilicon columns, the middle polysilicon column is a real gate, and the two sides are false gates. The N-type emitter region is formed in the P-type body region and located on both sides of the top of the real gate, and the emitter metal layer is formed above the epitaxial layer, electrically connected with the N-type emitter region and the false gate, and insulated and separated from the real gate. The power device of the application can strengthen the charge balance effect, relieve the local electric field concentration, and reduce the conduction loss and on-state voltage.