166 results about "Conduction loss" patented technology

The invention provides a monolithic integration multi-channel fin-shaped gate HEMT and a groove SBD and a preparation method thereof. The monolithic integration multi-channel fin-shaped gate HEMT comprises a substrate layer, a multi-channel fin-shaped gate HEMT and a groove anode SBD, the multi-channel fin-shaped gate HEMT comprises a first buffer layer, a first barrier layer, a first channel layer, a p-GaN layer, a source electrode, a drain electrode, a dielectric layer, a gate electrode and a plurality of grooves, wherein the first barrier layer and the first channel layer are stacked repeatedly. The plurality of grooves are arranged at intervals along the parallel direction from the source electrode to the drain electrode, are arranged in the middle region of the p-GaN layer at intervals, and sequentially penetrate through the p-GaN layer, the first channel layer and the first barrier layer to enter the first buffer layer; the trench anode SBD includes a second buffer layer, a second barrier layer and a second channel layer repeatedly stacked, a cathode, an anode, and an anode trench. Therefore, reverse conduction loss can be remarkably reduced, parasitic parameters are reduced, the size of the power conversion unit is reduced, the overall cost of a product is reduced, and the stability and reliability of a system are improved.

Provided in the present invention is a driver circuit for driving an input power transistor in a charge pump. The input power transistor of the charge pump is an NMOS transistor, which reduces the conduction loss, a source electrode of the input power transistor receives an input voltage, and a drain electrode of the input power transistor is coupled to a first end of a flying capacitor; a gate electrode of a high-side source-follower NMOS transistor of the driver circuit receives an adjustable reference voltage, a drain electrode of the high-side source-follower NMOS transistor is coupled to an output end of the charge pump, and a source electrode of the high-side source-follower NMOS transistor is coupled to a drain electrode of a low-side source-follower NMOS transistor; a source electrode of the low-side source-follower NMOS transistor is coupled to a drain electrode of a pull-down NMOS transistor, and a gate electrode of the low-side source-follower NMOS transistor is coupled to a gate electrode of the pull-down NMOS transistor; and the gate electrode of the pull-down NMOS transistor also receives an input power transistor control signal by means of a driver, a source electrode of the pull-down NMOS transistor is coupled to the first end of the flying capacitor, and the drain electrode of the pull-down NMOS transistor is also coupled to a gate electrode of the input power transistor. The present invention changes the output voltage of the charge pump by means of adjusting the voltage value of the adjustable reference voltage; and the driver circuit of the present invention directly receives the input voltage, thereby reducing the area of the charge pump.

The invention provides a safe shutdown method and system for a silicon carbide motor controller, and the method comprises the steps: entering a safe shutdown transition mode when a safe shutdown request is received; collecting three-phase current of the motor in real time, and predicting a three-phase current prediction value of the next period based on a sampling value; judging and controlling the conduction state of the silicon carbide power device of the corresponding bridge arm according to the predicted value, so as to guide the current to only flow through the channel and avoid the body diode; judging whether a safe turn-off condition is met or not based on the real-time sampling current value; and when the condition is met, quitting the safe turn-off mode and completely turning off all the power devices. Therefore, through combination of predictive control and real-time verification, the follow current is actively guided to flow through a silicon carbide device channel, the damage problem caused by large follow current of a body diode is fundamentally avoided, the conduction loss and the heating risk are remarkably reduced, and the safety and the reliability of the motor controller in the turn-off process are greatly improved.

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

The invention relates to a converter circuit and electronic equipment. The converter circuit comprises an active clamping circuit, a control circuit and a voltage stabilizing circuit, active devices in the active clamping circuit are controlled through the active clamping circuit to realize soft switching, that is, a first switching tube and a second switching tube are controlled to realize soft switching, so that the conduction loss of the first switching tube and the second switching tube is reduced, and the switching efficiency is improved. The problem that large loss is caused when the PFC converter works at high frequency due to the fact that an existing passive clamping circuit cannot achieve soft switching is solved.

The invention provides a low-conduction-loss direct-current circuit breaker with a fault type judgment function and a judgment method, and belongs to the field of circuit fault detection. In order to solve the problems that in an existing hybrid high-voltage direct-current circuit breaker, the conduction loss of a load commutation switch is high, and a circuit device does not have the fault type discrimination capability, the direct-current circuit breaker comprises a load branch, a multifunctional branch, a main breaking branch and an energy absorption branch. The discrimination method comprises the following steps: in a normal operation mode, a load branch is conducted; the capacitor pre-charging mode operates in parallel to charge the capacitor C; when the circuit is short-circuited, a thyristor turn-off mode is entered, and the T1 is turned off; and entering a load commutation mode, converting the fault current to a main breaking branch, introducing an energy absorption branch, and entering an energy absorption mode. And injecting a controlled RLC oscillation current, analyzing current waveform characteristics to judge a direct current fault type, and performing reclosing or maintenance of the circuit breaker according to the analyzed direct current fault type.

Provided are a switched-capacitor voltage converter, a chip, and an electronic device. The switched-capacitor voltage converter performs a buck or boost operation on the input voltage based on the different charging and discharging states of the capacitors and the different states of the first and second branches in different stages. The current of the transistors in the switched-capacitor voltage converter may be instantaneously zero, thereby significantly reducing the switching loss of the transistors. Moreover, the capacitors are not subject to conduction loss, such that the power loss of the switched-capacitor voltage converter is further reduced.

The invention discloses a drain extension field effect transistor and a preparation method, and relates to the technical field of semiconductor preparation. The drain expansion field effect transistor comprises a field oxidation structure, a field plate structure, a gate structure, a drain region and a source region, and the drain region and the source region are located on the two sides of the field oxidation structure. The field oxidation structure is divided into a first region, a second region and a third region, the second region is located between the first region and the third region, the field plate structure is located above the third region, the upper part of the second region is empty, one part of the gate structure covers the upper part of the first region, and the other part of the gate structure is close to the source region. According to the drain extended field effect transistor, the gate structure and the field plate structure of the drain extended field effect transistor are separated, so that specific voltage can be independently applied to the field plate structure to reduce conduction loss, switching loss and temperature rise of a device, and the problems of poor performance and low reliability of the device in the prior art are solved.

Wafer-bonded inductors, transformers, and related electronic components can be used in power electronics and provide low conduction loss in the MHz-GHz frequency range. The wafer bonding fabrication process and its thermal requirements offer relatively simple and low cost manufacturing. The resulting devices offer a unique combination of high power handling at high frequencies and small form factor.

The invention provides a power module loss determination method and device and a vehicle, and the method is applied to the technical field of power module loss evaluation, and the method comprises the steps: obtaining a preset conduction loss model and a preset switching loss model corresponding to a power module, and determining a target parameter type and at least one switching frequency group; on-off control is carried out on a power module in the inverter circuit based on the switching frequency in the switching frequency group, and a test data set corresponding to the switching frequency is acquired in the on-off control process; and constructing a target power loss model according to the test data set corresponding to the switching frequency group, a preset conduction loss model and a preset switching loss model, so as to determine the actual power loss of the power module based on the target power loss model in the operation process of the inverter circuit. According to the method, after the IGBT is applied to the inverter circuit, the construction of the target power loss model can be completed based on an actual application scene, so that the power loss calculation accuracy in the application process is improved.

The invention discloses a series adjustable voltage source type direct current power flow controller circuit, a method and a terminal, the scheme provided by the invention adopts a single bridge arm structure design in a parallel connection part, an autotransformer and a resonance groove are introduced, the single bridge arm structure can reduce the number of power devices and magnetic core elements, and the size of the power devices and the magnetic core elements is reduced. Meanwhile, the amplitude of the output alternating voltage is improved by connecting the autotransformer in series, the current stress flowing through the sub-modules is reduced, the conduction loss can be reduced, it can be ensured that the full voltage of the system is controlled within the bearable range of the sub-modules of the parallel modules, and the system reliability is improved. The parallel module and the series module are connected in cooperation with the resonant tank, soft switching operation of the sub-module is achieved, current impact in the switching process is effectively restrained, switching loss is greatly reduced, hardware configuration of a series adjustable voltage source type direct current power flow controller circuit is simplified, and the reliability of the direct current power flow controller circuit is improved. And the equipment cost and the structural complexity are reduced.

This application provides a Saber-based inverter simulation method, which includes: generating an initial simulation test circuit; performing time-domain simulation based on the initial simulation test circuit to obtain the total loss, switching loss, and conduction loss of the power device model; transforming the initial simulation test circuit to obtain a replacement simulation test circuit, and performing sensitivity testing on the obtained replacement simulation test circuit based on the total loss, switching loss, and conduction loss of the power device model to obtain the sensitivity of each initial curve; and adjusting the power device design based on the obtained total loss, switching loss, conduction loss of the power device model, and the sensitivity of each original curve. This method can guide the design of power devices and other parameters in the circuit, effectively improving R&D efficiency and quickly achieving the goals of improving inverter efficiency, reducing losses, and meeting system efficiency requirements.

The utility model relates to circuit technical field, concretely relates to low conduction loss's MOS pipe synchronous rectification power management circuit. Including: at least one synchronous rectification MOS pipe for rectifying power supply, the synchronous rectification MOS pipe has very low on -resistance, voltage detection module is connected to the drain and source of synchronous rectification MOS pipe for real -time detection synchronous rectification MOS pipe's drain -source voltage, logic control module is with voltage detection module electricity connection, receives the drain -source voltage signal from voltage detection module, the logic control module according to the preset voltage threshold condition, when the detected drain -source voltage is lower than the opening threshold value, the application can according to application scene, load variation and environmental factor dynamic optimization MOS pipe working state.

The application relates to the technical field of gate driving, and discloses an enhanced GaN power device crosstalk suppression driving circuit and method.The circuit comprises a pulse generation module, a driving signal generation module and a negative voltage clamping module.The pulse generation module generates three-way PWM signals;the negative voltage clamping module utilizes a monostable trigger circuit to process an upper tube control signal to generate a clamping trigger signal, and constructs a negative voltage generation circuit through a driving chip, a capacitor and a MOS tube; and the driving signal generation module combines the above signals into a multi-level driving signal to act on a lower tube gate.The application effectively suppresses false conduction by utilizing negative voltage when positive crosstalk occurs, rapidly clamps the gate voltage to 0V after the crosstalk is over, so as to adapt to different dead time applications and avoid threshold voltage drift caused by long-term negative voltage; and the gate-source voltage is clamped to a low positive level in the dead time, so as to significantly reduce the reverse conduction loss of the GaN device.Only a small number of devices are used to realize high reliability, low loss and crosstalk suppression.

The application provides a kind of hybrid vector variable frequency control method based on three-phase rectifier, it is related to power electronic electric energy conversion technical field;Current three-phase PWM rectification technology is important front-stage equipment, and the current of switch tube is large, and the loss of switch tube is composed of turn-on loss and conduction loss, and conduction loss cannot be avoided in high-power state, and switch loss is related to frequency, if switch tube loss is not controlled, switch tube loss will accumulate in the form of heat, when temperature exceeds the limit of switch tube, it often causes irreversible damage to switch tube, therefore, on the basis of considering the power quality of DC side, the action frequency of switch tube of three-phase PWM rectifier is dynamically controlled to realize the continuous operation of three-phase PWM system under high power, and the method considers the stability of DC side voltage and the temperature characteristics of IGBT to carry out frequency modulation.

The invention discloses a motor control method and device, a motor, a storage medium and a computer program product, and the method comprises the steps: building a multi-type loss model of a driving system of the motor, and the multi-type loss model at least comprises copper loss, iron loss, switching loss and conduction loss; determining an initial current reference value of the motor based on a multi-type loss model; injecting a preset signal into the current loop, and performing online optimization on a current angle corresponding to the initial current reference value; and adopting a preset current prediction control strategy to adjust the optimized current so as to control the operation of the motor. According to the scheme, the global loss of the permanent magnet synchronous motor system is minimized, the high dynamic response capability of a current loop is improved, and the problem that high efficiency and high performance are difficult to consider in a complex working condition is solved.

The invention relates to the technical field of power electronics, and discloses a self-driven rectifying circuit. Comprising a rectifier tube, a follow current tube, a third switch tube, a fourth switch tube, a dead zone adjusting circuit comprising a first capacitor and a first voltage-regulator tube, a main transformer comprising a first induction coil and a second induction coil, a first amplitude limiting circuit comprising a sixth switch tube, and a second amplitude limiting circuit comprising a fifth switch tube. According to the technical scheme, self-driving is achieved through the main transformer driving winding, the simplified peripheral circuit design is adopted, the component cost is effectively reduced, a safe dead zone is set through the dead zone adjusting circuit, the risk that a rectifier tube and a follow current tube are communicated together is completely eradicated through the interlocking circuit, and driving signal overshoot is restrained through the amplitude limiting circuit; the low cost is maintained while the high performance is ensured, so that the switching loss is effectively reduced, the circuit reliability, the anti-interference capability and the overall efficiency are improved, and the defects of large conduction loss, low reliability and high cost of traditional diode rectification are overcome.

The full direct current offshore wind power system based on network type direct current fan relates to the field of model construction of full direct current offshore wind power system. The existing full direct current OWP system has the problems of too large volume and weight. The full direct current offshore wind power system based on network type direct current fan and uncontrolled direct current transformer is realized, the uncontrolled direct current transformer (U-DCT) is operated in the open loop control mode of the maximum modulation ratio, the internal alternating current voltage can be maximized, the sub-module capacitor value and conduction loss are reduced, and the economy of the full direct current offshore wind power system is effectively improved; the use weight and installation volume of the capacitor device are greatly reduced; the application of the full direct current offshore wind power system is mainly used in the field of offshore wind power.

The invention relates to the technical field of power electronic conversion, in particular to a front-stage bidirectional AC-DC converter of a vehicle-mounted charger, which comprises an input filter circuit, an interleaved parallel totem pole power stage, an energy storage circuit, a driving and control circuit and a sampling and protecting circuit. The totem pole power level adopts two groups of silicon carbide MOSFET high-frequency switch tubes and low-frequency synchronous rectifier tubes which alternately work in the positive and negative half cycles of the power frequency, and the two paths are staggered by 180 degrees to operate. The control circuit adopts a double-loop control strategy of a DC bus voltage outer loop and a proportional resonance current inner loop to realize power factor correction and bidirectional power flow. Through combination of the silicon carbide device and the optimized topology, the efficiency is improved by 5%-10%, the power density is improved by 30%-50%, the cost is reduced by 20%-30%, the multi-functional application of G2V, V2G and V2L is achieved, an all-around protection mechanism is integrated, and the multi-functional protection device is suitable for a complex vehicle-mounted environment. The problem that a power device of an existing converter is large in conduction loss and switching loss is solved.

The utility model discloses a low -power feedback switching power supply relates to the field of electronic circuit. Including input module, control module, voltage transformation module, feedback module and output module. Input module contains lightning protection temperature control and filter rectifier circuit, realizes the lightning protection, filter and rectification to external power supply, control module integration starts, the feedback of original side, overcurrent monitoring and switching circuit, is the control core of power supply, voltage transformation module passes through transformer and peak current absorption circuit, realizes the safe transformation of voltage, feedback module utilizes the combination of photocoupler and voltage stabilizer, real -time acquisition output voltage and feedback to control module, output module adopts synchronous rectifier circuit, and cooperates filter capacitor and common mode inductance, realizes high -efficient rectification and filter. The utility model discloses through synchronous rectification technology reduction conduction loss, combines the adaptive feedback system fast adjustment duty cycle, and the power efficiency and output voltage stability are improved significantly, have high reliability, low loss, response speed fast and so on advantage.

A switched-capacitor power stage and a switched-capacitor transformer, the switched-capacitor power stage comprising a first sub-power stage. The first sub-power stage comprises a first inductor, a first high switch, a first low switch, and a first set of switched-capacitor networks. The first inductor is coupled to an input terminal. The first high switch is coupled between the first inductor and an output terminal. The first low switch is coupled between the first inductor and a first transition node. The first set of switched-capacitor networks is coupled between the first transition node and the output terminal. Accordingly, switching loss, conduction loss, and ripple are all small, voltage conversion ratio is large, and efficiency is better.

The utility model discloses a driving control circuit of a power tube, and belongs to the technical field of switching power supplies. According to the driving control circuit of the power tube, the input end of a driving voltage control module is configured to receive feedback voltage of a circuit where the power tube is located, and the output end of the driving voltage control module is configured to output first driving voltage based on the feedback voltage of a first multiple; the input end of the driving current control module is configured to receive a feedback voltage and a valley signal corresponding to a power tube, and the output end of the driving current control module is configured to output a first control signal; the input end of the driving module is connected with the output end of the driving voltage control module and the output end of the driving current control module, and the output end of the driving module is connected with the grid electrode of the power tube. According to the driving control circuit of the power tube, the conduction loss of the power tube is reduced, the current driving state can be accurately distinguished, and the driving current intensity influence caused by inaccurate state characterization can be avoided.

This invention discloses a nested TLVR multiphase voltage regulator and its control method to solve the problems of large size of coupling transformers, high AC magnetic flux density and core loss, long interconnection lines of coupling windings, complex interconnection of coupling windings, and high conduction loss of interconnection circuits in existing TLVR multiphase voltage regulators. Through the nested TLVR structure, this invention allows the coupling transformer to be interconnected only with adjacent or nearby coupling transformers, reducing the complexity of coupling transformer winding interconnection, the length of interconnection circuits, and losses. This invention can also effectively reduce the inductance of the coupling transformer itself, reduce the peak AC magnetic flux and core loss of the coupling transformer core, thereby effectively reducing the size and losses of the coupling transformer. This invention provides a simpler, easier-to-implement, more efficient, and higher power density solution for multiphase voltage regulators supplying power to various computing processor chips.

The application discloses a Sepic type power correction circuit based on a switched inductor, which comprises switching tubes S1-S3, diodes D1-D5, inductors L1-L5, capacitors C1 and C o The diodes D3-D5 and the inductors L4 and L5 form a switched inductor structure, and the voltage gain of the converter is D / (2-D). Compared with a conventional Sepic PFC converter, the Sepic type power correction circuit based on the switched inductor improves the step-down gain, ensures that the whole duty cycle range is in a step-down state, and has a larger duty cycle than the conventional Sepic PFC converter in the case of a high step-down ratio, thereby effectively avoiding the emergence of a limit duty cycle. The no-bridge structure can realize lower conduction loss. The original output diode is replaced by the switched inductor structure, so that the output current is continuous, and the output current can be filtered. All the switching tubes are common ground, and a lower-cost driving circuit can be used.

The application provides a three-level converter overall power loss calculation and optimization method, and belongs to the technical field of power electronic converters.The application is aimed at the problem that the traditional three-level converter ignores the filter inductance current in loss evaluation, and is based on accurate modeling of the amplitude of the filter inductance current ripple component, and models the overall power loss of the three-level power electronic converter as a mathematical function about the switching frequency, which is composed of the conduction loss power and switching loss power of the semiconductor power device, the filter inductance loss power and the bus capacitor loss power.The application can be used not only for converter loss evaluation, but also for guiding the switching frequency optimization, and further improves the operation efficiency of the converter.

The invention provides a converter which can suppress peak current generated due to connection of capacitors having a potential difference, and thus can reduce conduction loss of a switching element and generation of noise. A converter includes: an inductor L; a plurality of switching elements (Q1 to Q6); and a plurality of capacitors (C1, C2, Co) connected via switching elements (Q1 to Q6) and forming a current path of an output current (Io) through the capacitors (C1, C2, Co) by turning on the switching elements (Q1 to Q6) (complementary turning on of the switching elements (Q1, Q3, Q5) and the switching elements (Q2, Q4, Q6). The sub-inductor Lo is inserted into a current path.

The application provides a kind of semiconductor device loss intelligent calculation method and system, the method first real-time acquisition semiconductor device's operating electrical parameter and the temperature parameter of surrounding environment multiple temperature measuring points, form synchronous operation data set with time stamp.Based on the principle of semiconductor physics, a parameterized intrinsic loss model is established to describe the relationship between conduction loss and switching loss as a function of electrical parameters and junction temperature.A parameterized thermal coupling effect model is established based on the physical layout of the control cabinet and the heat transfer path, with the thermal resistance parameter to be identified describing the heat transfer relationship between the device and other heat sources.Parameter identification algorithm is used to update the model parameters using the synchronous operation data set, resulting in an adaptive model parameter set that reflects the current operating conditions and coupling state.Combining the synchronous operation data set and the adaptive model parameter set, the real-time loss value of the semiconductor device is calculated through the intrinsic loss model and the thermal coupling effect model, achieving accurate loss evaluation under actual operating conditions.

This application provides a method for fabricating a fast recovery diode, a fast recovery diode, and an electronic device, relating to the field of semiconductor technology. The method for fabricating a fast recovery diode includes: providing a substrate, the substrate including a first surface and a second surface disposed opposite to each other; performing ion doping treatment on the substrate to form ion-doped regions on the first surface and the second surface; etching the first surface based on a predetermined etching region to form a first groove; wherein the depth of the first groove is greater than the thickness of the ion-doped region; the predetermined etching region is located at the center of the first surface; forming a passivation layer in the first groove; and performing metal evaporation on the first surface to form a first metal layer. This method not only reduces the conduction loss of the fast recovery diode, improves energy conversion efficiency, effectively suppresses reverse current, and reduces electromagnetic interference, but also enhances its resistance to avalanche breakdown energy and surge capability.

A semiconductor device has both low conduction loss and low switching loss, and uniformity of heat generation during operation. The semiconductor device has high and low conduction regions in one semiconductor chip, and includes: in the low conduction region, a first carrier control gate connected to a first gate electrode, and a switching gate connected to a second gate electrode controllable independently of the first gate electrode; and in the high conduction region, a second carrier control gate connected to a third gate electrode. In the semiconductor device, of the first carrier control gate and the switching gate, the first carrier control gate is placed at an end portion of the low conduction region on a boundary side with the high conduction region, and a concentration of carriers that can be accumulated at conduction time is lower in the low conduction region than in the high conduction region.

This invention discloses a soft-switching full-bridge converter based on a buck-type auxiliary circuit. The DC voltage module provides DC input voltage to other modules. A passive buck-type auxiliary network with a return flow assists the soft-switching of the lagging bridge arm in the four-switch main power bridge arm with loss-reduction capacitors. The four-switch main power bridge arm with loss-reduction capacitors outputs a high-frequency square wave through the transformer primary side and reduces the circulating current loss of the transformer primary side, while smoothing the auxiliary circuit current. An asymmetric magnetically coupled LC ripple suppression network rectifies and filters the high-frequency square wave, outputting a smooth DC voltage. The soft-switching implementation of this invention is independent of the load state, i.e., independent of the main power circuit. The loss-reduction capacitor reduces the circulating current in the main power circuit without disrupting the soft-switching conditions, while smoothing the buck-type auxiliary circuit current. This results in low switching and conduction losses, improved efficiency, and helps to increase the system's operating frequency, leading to high reliability.