289 results about "Conduction loss" patented technology

The invention discloses an efficient anti-freezing and anti-blocking integrated induction heating system and method for an oil and gas pipeline, belongs to the technical field of anti-freezing and anti-blocking of oil and gas pipelines, and aims at solving the problems that in the prior art, heating efficiency is low, energy consumption is huge, heating uniformity and adaptability are poor, the system integration degree is low, and the intelligent degree is insufficient. Comprising the steps of S1, induction heating unit arrangement and power management; s2, real-time temperature monitoring and data acquisition; s3, intelligent data analysis and precise heat management; the electromagnetic induction heating principle is adopted, the induction coil directly heats the pipeline and the internal medium, heat conduction loss and heat energy radiation loss of heating modes such as traditional resistance wires and heat tracing bands are reduced, the intelligent power management module can optimize power supply and power adjustment, and the self-adaptive environment and load adjustment strategy is combined, so that the self-adaptive load adjustment is achieved. The heating power can be automatically adjusted according to the environment temperature and the pipeline load, the anti-freezing and anti-blocking effect is guaranteed, meanwhile, energy consumption is remarkably reduced, and the burden of an electric power supply system is relieved.

The invention relates to the technical field of semiconductors, in particular to a source heterojunction contact semiconductor structure and device and a manufacturing method, the semiconductor structure comprises a gate structure, a body region structure, a source structure and a drain structure, and the source structure comprises a polycrystalline silicon source contact layer; the semiconductor structure comprises a body region structure and a polycrystalline silicon source contact layer, the body region structure is surrounded by the gate structure, a source contact region is arranged in the body region structure, the polycrystalline silicon source contact layer is in contact with the source structure through the source contact region so as to form a heterojunction diode with the source structure, and the heterojunction diode is a freewheeling diode of the semiconductor structure. The drain electrode structure is located on one side, back to the gate electrode structure, of the body region structure; the semiconductor structure can be a SiC MOSFET structure, reverse conduction voltage drop during follow current of the SiC MOSFET can be greatly reduced, and conduction loss and loss caused during switching are reduced.

The invention provides a switching power supply device comprising a transformer which comprises a primary winding and a secondary winding and is used for converting an input voltage into an output voltage; the primary switching tube is connected with the primary winding and controls the on-off of the primary winding; the rectifying unit is connected with the secondary winding and rectifies the output of the secondary winding, and the rectifying unit comprises a semiconductor field effect transistor; the control unit is connected with the rectification unit and generates a control signal so as to control the switch of the semiconductor field effect transistor through the control signal; the current detection unit detects the output current and generates a current detection signal; the control unit receives the current detection signal and adjusts the control signal according to the current detection signal. According to the device, the COOLMOS with small internal resistance and high switching speed is adopted, the switching loss is reduced, the switching signal is dynamically adjusted by the control unit according to the real-time output current, the rectification conduction loss and the switching noise are reduced, the power supply conversion efficiency is improved, and the electromagnetic interference is reduced.

The utility model relates to a crosstalk suppression driving circuit of a silicon carbide MOSFET bridge circuit and power supply equipment. The crosstalk suppression driving circuit comprises an upper bridge driving module, an upper bridge crosstalk suppression module, a lower bridge driving module and a lower bridge crosstalk suppression module. The upper bridge driving module is respectively connected with the upper bridge crosstalk suppression module and the upper bridge arm, and the upper bridge crosstalk suppression module is also connected with the upper bridge arm; the lower bridge driving module is connected with the lower bridge crosstalk suppression module and the lower bridge arm, and the lower bridge crosstalk suppression module is further connected with the lower bridge arm. Each crosstalk suppression module and the corresponding bridge arm share a turn-off signal and a turn-on signal, and there is no need to additionally add a detection or control circuit to control the crosstalk suppression module. Each crosstalk suppression module is connected with the corresponding bridge arm in the turn-off process of the corresponding bridge arm, so that the forward driving crosstalk and the negative driving crosstalk of the silicon carbide MOSFET can be suppressed; and each crosstalk suppression module is automatically disconnected with the corresponding bridge arm before the corresponding bridge arm is conducted, so that the conduction loss of the bridge arm can be reduced, and the circuit efficiency is prevented from being reduced.

The invention relates to a feedback-based self-adaptive grid voltage regulation synchronous rectification method and a chip, which are executed in a synchronous rectification chip of a power supply circuit. A voltage signal VKA between the drain electrode and the source electrode of the synchronous rectification MOS tube is detected, a feedback signal V 'KA is formed through adaptive filtering, and the driving module dynamically adjusts the grid voltage Vgs according to the V' KA. When the V 'KA is lower than a conduction detection threshold VON, the MOS tube is completely conducted; when the V 'KA rises to be close to a pre-turn-off trigger threshold value VREADY-OFF, the Vgs is dynamically reduced to increase the on resistance, so that the MOS tube is kept in an incomplete conduction state; in the state, the V 'KA is continuously monitored, when the V' KA is lower than the VON again, complete conduction is recovered, only when the V 'KA continuously rises and reaches a turn-off threshold VOFF, the MOS tube is completely turned off, and if the above conditions are not met, the MOS tube is maintained in an incomplete conduction state. According to the adaptive closed-loop adjustment method, the conduction loss and the grid driving loss can be effectively reduced, and the power supply conversion efficiency and the system reliability are improved.

The invention discloses a multi-path power source redundant power supply control method and system, and belongs to the technical field of power electronics, the system comprises a dynamic priority decision module, a zero-voltage-drop switching circuit and a fault safety framework, the dynamic priority decision module supports a user to customize a power source use priority rule through an MCU, and the zero-voltage-drop switching circuit is used for switching the zero-voltage-drop switching circuit to the fault safety framework. The MCU can autonomously carry out an automatic degradation and upgrading mechanism through voltage quality; according to the zero-voltage-drop switching circuit, when the MCU detects a fault of the main power supply, a target power supply pre-charging path is started, and when the target power supply is pre-charged until the voltage difference between the target power supply and the source voltage is smaller than or equal to 0.1 V, the target power supply GaNFET can be synchronously triggered to be switched on, and the pre-charging circuit and the original power supply GaNFET can be synchronously triggered to be switched off. The multi-path power supply input automatic switching circuit solves the problems of power-off risk, easy conduction loss and relatively high failure rate in the prior art, is suitable for a multi-path power supply input automatic switching system of a decoder and industrial control equipment, and is particularly suitable for a long-time uninterrupted power supply condition.

The invention provides a monolithic integration multi-channel fin-shaped gate HEMT and a groove SBD and a preparation method thereof. The monolithic integration multi-channel fin-shaped gate HEMT comprises a substrate layer, a multi-channel fin-shaped gate HEMT and a groove anode SBD, the multi-channel fin-shaped gate HEMT comprises a first buffer layer, a first barrier layer, a first channel layer, a p-GaN layer, a source electrode, a drain electrode, a dielectric layer, a gate electrode and a plurality of grooves, wherein the first barrier layer and the first channel layer are stacked repeatedly. The plurality of grooves are arranged at intervals along the parallel direction from the source electrode to the drain electrode, are arranged in the middle region of the p-GaN layer at intervals, and sequentially penetrate through the p-GaN layer, the first channel layer and the first barrier layer to enter the first buffer layer; the trench anode SBD includes a second buffer layer, a second barrier layer and a second channel layer repeatedly stacked, a cathode, an anode, and an anode trench. Therefore, reverse conduction loss can be remarkably reduced, parasitic parameters are reduced, the size of the power conversion unit is reduced, the overall cost of a product is reduced, and the stability and reliability of a system are improved.

The invention relates to the technical field of data processing, in particular to a high-frequency diode conduction loss characteristic test system, which comprises an acquisition module, a first judgment module, a second judgment module, a first determination module, a second determination module, an adjustment module and an output module. According to the method, multiple key data are collected, rapid screening is carried out according to forward voltage and reverse recovery charges, then, hidden defects of abnormal dynamic relevance of parameters are analyzed and identified by introducing shell temperature, and finally, a high-loss diode is obtained; the trend abnormity is identified by using the space-time distribution characteristics of the high-loss diode, and the loss reason is accurately detected through the voidage fluctuation mode; and meanwhile, based on a self-adaptive adjustment mechanism fed back by the test accuracy, a test report is finally output, so that the problems of low identification accuracy of the high-loss diode and low detection accuracy of loss reasons caused by excessive dependence on static parameters and incapability of adapting to complex and changeable working conditions are effectively solved.

The invention provides a driving system and method for a vehicle-mounted lamp and a vehicle, and relates to the technical field of vehicle lamps, and the driving system comprises a single-end primary inductance converter and a control module; the single-end primary inductance converter comprises a power supply module and a gallium nitride switch module, and the gallium nitride switch module is connected with the power supply module and the vehicle-mounted lamp; the control module is connected with the gallium nitride switch module and the vehicle-mounted lamp, the control module is used for detecting the load current of the vehicle-mounted lamp and switching the on-off state of the gallium nitride switch module and the working mode of the driving system based on the load current, and the working mode comprises a pulse width modulation mode, a pulse frequency modulation mode and a burst mode. The system is provided with the gallium nitride switch module, so that the synchronous rectification effect can be achieved, and the conduction loss and the switching loss are relatively low. And secondly, the system adopts a hybrid modulation strategy, so that the optimal working mode can be automatically switched in different load states, and the driving stability, reliability and efficiency of the system are improved.

The invention discloses an operation parameter optimization method and system for improving the overload capacity of a power electronic converter, and belongs to the technical field of power electronics. The method comprises the following steps: constructing an output current model considering current ripples in a switching period, and obtaining an accurate current waveform expression; calculating conduction loss and switching loss of each power device in each switching period based on the model; under a set temperature rise or loss constraint condition, parameters such as direct-current voltage and switching frequency are optimized through an optimization algorithm, and the optimized parameters are applied to converter operation. The method solves the problem that loss estimation is inaccurate due to the fact that a traditional simplified model ignores current ripples, through precise modeling, refined loss calculation and scientific parameter optimization, the thermal stress of a device is remarkably reduced, the overload capacity of the converter is improved, the method is suitable for various topologies such as a two-level converter, a three-level converter and a direct-current converter, and the method has wide application prospects. The method can be widely applied to the fields of new energy and rail transit.

The invention discloses a groove SiC MOSFET device and a preparation method thereof. The preparation method comprises the following steps: epitaxial growth; performing P-type ion implantation for the first time; performing first-stage groove etching; performing N-type ion implantation; implanting P-type ions for the second time; carrying out second-stage groove etching; growing gate oxide, polycrystalline silicon and an interlayer insulating layer; carrying out metal deposition; the beneficial effects of the invention are that the multi-stage trench structure is combined with the plane gate and the trench gate, so that the channel density is increased, the current capability is provided, and the conduction loss is reduced; the MPS diode structure is integrated, the forward voltage drop of the body diode is reduced, the discharge capacity is improved when inrush current occurs in the circuit, the reverse follow current capacity can be improved through the parallel Schottky diode structure, and electronic elements needed by a peripheral circuit are reduced; by integrating the built-in field plate structure, the electric field concentration effect at the bottom of the trench gate is effectively relieved.

Provided in the present invention is a driver circuit for driving an input power transistor in a charge pump. The input power transistor of the charge pump is an NMOS transistor, which reduces the conduction loss, a source electrode of the input power transistor receives an input voltage, and a drain electrode of the input power transistor is coupled to a first end of a flying capacitor; a gate electrode of a high-side source-follower NMOS transistor of the driver circuit receives an adjustable reference voltage, a drain electrode of the high-side source-follower NMOS transistor is coupled to an output end of the charge pump, and a source electrode of the high-side source-follower NMOS transistor is coupled to a drain electrode of a low-side source-follower NMOS transistor; a source electrode of the low-side source-follower NMOS transistor is coupled to a drain electrode of a pull-down NMOS transistor, and a gate electrode of the low-side source-follower NMOS transistor is coupled to a gate electrode of the pull-down NMOS transistor; and the gate electrode of the pull-down NMOS transistor also receives an input power transistor control signal by means of a driver, a source electrode of the pull-down NMOS transistor is coupled to the first end of the flying capacitor, and the drain electrode of the pull-down NMOS transistor is also coupled to a gate electrode of the input power transistor. The present invention changes the output voltage of the charge pump by means of adjusting the voltage value of the adjustable reference voltage; and the driver circuit of the present invention directly receives the input voltage, thereby reducing the area of the charge pump.

The invention provides a safe shutdown method and system for a silicon carbide motor controller, and the method comprises the steps: entering a safe shutdown transition mode when a safe shutdown request is received; collecting three-phase current of the motor in real time, and predicting a three-phase current prediction value of the next period based on a sampling value; judging and controlling the conduction state of the silicon carbide power device of the corresponding bridge arm according to the predicted value, so as to guide the current to only flow through the channel and avoid the body diode; judging whether a safe turn-off condition is met or not based on the real-time sampling current value; and when the condition is met, quitting the safe turn-off mode and completely turning off all the power devices. Therefore, through combination of predictive control and real-time verification, the follow current is actively guided to flow through a silicon carbide device channel, the damage problem caused by large follow current of a body diode is fundamentally avoided, the conduction loss and the heating risk are remarkably reduced, and the safety and the reliability of the motor controller in the turn-off process are greatly improved.

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

The invention provides a thyristor-based complementary commutation type solid-state DC circuit breaker and a control method thereof. The thyristor-based complementary commutation type solid-state DC circuit breaker comprises a main branch and an auxiliary branch, the main branch comprises a thyristor and a thyristor which are reversely connected in series, the anodes of the thyristors in the auxiliary branch are connected, the cathodes of the thyristors in the auxiliary branch are connected with the anodes of the thyristors through resistors, the anodes of the thyristors in the auxiliary branch are connected with the cathodes of the thyristors in the auxiliary branch, the cathodes of the thyristors in the auxiliary branch are connected with the anodes of the thyristors through the resistors, and the cathodes of the thyristors are grounded through the resistors; the other ends of the positive electrodes are respectively connected with the positive electrodes, the negative electrodes are connected with the positive electrodes, and the negative electrodes are connected with the negative electrodes; the anodes of the diodes are connected, the cathodes of the diodes are connected with the other end of the capacitor C through the resistor, the anodes of the diodes are connected with the cathodes of the diodes, the cathodes of the diodes are connected with the other end of the capacitor C through the resistor, and the lightning arrester MOV is connected with the capacitor C in parallel. The device is low in conduction loss, is high in operation efficiency, can interrupt bidirectional operation current and fault current, is high in controllability and reliability, and has a reclosing function.

The invention discloses a three-phase LLC resonant converter. The converter is composed of a first-phase LLC resonant converter, a second-phase LLC resonant converter and a third-phase LLC resonant converter which are connected in sequence. And the input end of the first-phase LLC resonant converter is connected in series with the input ends of the second-phase LLC resonant converter and the third-phase LLC resonant converter to form a common input end. The output end of the first-phase LLC resonant converter, the output end of the second-phase LLC resonant converter and the output end of the third-phase LLC resonant converter are connected in parallel to form a common output end. The phase difference between any two resonant converters in the three-phase LLC resonant converter is 120 degrees. And the first-phase LLC resonant converter, the second-phase LLC resonant converter and the third-phase LLC resonant converter share one magnetic integrated transformer. Each of the first-phase LLC resonant converter, the second-phase LLC resonant converter and the third-phase LLC resonant converter is provided with two resonant circuits. According to the invention, the conduction loss of the three-phase LLC resonant converter can be reduced.

The invention discloses a high-gain multi-inductor direct-current boost converter, and belongs to the field of power electronic converters. The technical problems that in the prior art, a direct current boost converter is limited in boost capacity, large in conduction loss, low in efficiency and complex in system are solved. Through multi-inductor staged energy storage and energy release and in combination with charging and discharging of the capacitors, multiple superposition of input voltage and inductive induction voltage is realized, so that extremely high voltage gain is obtained under the condition of small duty ratio. Meanwhile, voltage stress is dispersed to a plurality of inductors and diodes, so that the stress of a single device is effectively reduced, the conduction loss is reduced, and the reliability and efficiency of the system are improved. The boost converter is mainly used for boost conversion.

The invention relates to a converter circuit and electronic equipment. The converter circuit comprises an active clamping circuit, a control circuit and a voltage stabilizing circuit, active devices in the active clamping circuit are controlled through the active clamping circuit to realize soft switching, that is, a first switching tube and a second switching tube are controlled to realize soft switching, so that the conduction loss of the first switching tube and the second switching tube is reduced, and the switching efficiency is improved. The problem that large loss is caused when the PFC converter works at high frequency due to the fact that an existing passive clamping circuit cannot achieve soft switching is solved.

The invention discloses a half-bridge module and a switching power supply circuit. The half-bridge module comprises an enhancement mode device serving as an upper tube and a depletion mode device serving as a lower tube; the source electrode of the enhancement mode device and the drain electrode of the depletion mode device are electrically connected and form a common node, and the node is used for inputting or outputting power; the drain electrode of the enhanced device is used as the high-voltage end of the half-bridge module, and the source electrode of the depletion device is used as the low-voltage end of the half-bridge module; the grid electrode of the enhancement type device is used for accessing an upper tube driving signal, the grid electrode of the depletion type device is used for accessing a lower tube driving signal, and the enhancement type device and the depletion type device are configured to be in complementary conduction. According to the half-bridge module provided by the invention, the enhanced device is naturally closed when no control signal exists, and a built-in safety characteristic is provided. The depletion type device reduces conduction loss and switching loss and improves overall efficiency due to low conduction resistance and stray capacitance of the depletion type device.

The invention provides a low-conduction-loss direct-current circuit breaker with a fault type judgment function and a judgment method, and belongs to the field of circuit fault detection. In order to solve the problems that in an existing hybrid high-voltage direct-current circuit breaker, the conduction loss of a load commutation switch is high, and a circuit device does not have the fault type discrimination capability, the direct-current circuit breaker comprises a load branch, a multifunctional branch, a main breaking branch and an energy absorption branch. The discrimination method comprises the following steps: in a normal operation mode, a load branch is conducted; the capacitor pre-charging mode operates in parallel to charge the capacitor C; when the circuit is short-circuited, a thyristor turn-off mode is entered, and the T1 is turned off; and entering a load commutation mode, converting the fault current to a main breaking branch, introducing an energy absorption branch, and entering an energy absorption mode. And injecting a controlled RLC oscillation current, analyzing current waveform characteristics to judge a direct current fault type, and performing reclosing or maintenance of the circuit breaker according to the analyzed direct current fault type.

The application is suitable for the technical field of switching power supply, and provides a Buck converter with double-mode switching. The application realizes system protection function and low-power mode by adding a HVT (High Voltage Threshold) module to control the conduction and turn-off of the power tube in a loop. The HVT module compares the output feedback voltage VFB with the reference voltage Vref, can quickly turn off the upper and lower power tubes in the soft start stage, effectively avoids the chip from burning due to the transient overvoltage of the system, turns off the power tube to reduce the conduction loss and start the low-power mode in the PFM mode, and can turn off the upper power tube and turn on the lower power tube to release the excess current in the loop and prevent the backflow phenomenon when triggering the current limiting ILIM mechanism. The application realizes the double-mode switching control strategy of the Buck converter in the heavy load PWM and the light load PFM, improves the overall working efficiency, effectively improves the stability of the converter, increases the ECO (energy saving) mode, and reduces the system power consumption.

Provided are a switched-capacitor voltage converter, a chip, and an electronic device. The switched-capacitor voltage converter performs a buck or boost operation on the input voltage based on the different charging and discharging states of the capacitors and the different states of the first and second branches in different stages. The current of the transistors in the switched-capacitor voltage converter may be instantaneously zero, thereby significantly reducing the switching loss of the transistors. Moreover, the capacitors are not subject to conduction loss, such that the power loss of the switched-capacitor voltage converter is further reduced.

The invention relates to the technical field, and discloses a hydrogen-cooled generator rotor conductive screw magnetic attraction type disassembling and assembling tool which has the advantages that an arc-shaped magnetic attraction base can be quickly mounted, and the tool is suitable for a collecting ring fan and a curved surface shaft at a large retaining ring; enough and reliable suction force is provided for the special clamp, it is ensured that the clamp can provide stable and reliable radial pressure, the sleeve is prevented from loosening, the two independently-adjustable magnetic suction bases are adopted, it can be ensured that the clamp is parallel to the center of the rotating shaft, and it is ensured that a conductive screw or a sealing pressing cap sleeve head is stably installed; the conductive screw or the sealing pressing cap sleeve head is connected with the clamp through threads which are sufficient in length and identical in thread pitch with the workpiece, it can be ensured that the radial pressure direction is parallel to the stroke of the workpiece, damage to the threads of the workpiece is avoided, and the conductive screw or the sealing pressing cap sleeve head and the clamp can ensure that conduction loss of torque is minimum.

The invention discloses a drain extension field effect transistor and a preparation method, and relates to the technical field of semiconductor preparation. The drain expansion field effect transistor comprises a field oxidation structure, a field plate structure, a gate structure, a drain region and a source region, and the drain region and the source region are located on the two sides of the field oxidation structure. The field oxidation structure is divided into a first region, a second region and a third region, the second region is located between the first region and the third region, the field plate structure is located above the third region, the upper part of the second region is empty, one part of the gate structure covers the upper part of the first region, and the other part of the gate structure is close to the source region. According to the drain extended field effect transistor, the gate structure and the field plate structure of the drain extended field effect transistor are separated, so that specific voltage can be independently applied to the field plate structure to reduce conduction loss, switching loss and temperature rise of a device, and the problems of poor performance and low reliability of the device in the prior art are solved.

The invention relates to a semiconductor power device and a preparation method thereof. The semiconductor power device comprises a substrate, an epitaxial layer, a first grid electrode, a second grid electrode, a first dielectric layer, a second dielectric layer, a polycrystalline silicon region and a source electrode, wherein the material of the substrate comprises silicon carbide; the epitaxial layer comprises a drift region, a well layer, a first groove, a source region and a source contact region; the first groove extends into the drift region from the surface, far away from the substrate, of the epitaxial layer and penetrates through the well layer; the first grid electrode and the second grid electrode are located in the first groove, and the first grid electrode and the second grid electrode are arranged in an isolated mode. The first dielectric layer wraps the first grid electrode, the second dielectric layer wraps the second grid electrode, and the polycrystalline silicon region of the second conduction type is located between the first dielectric layer and the second dielectric layer and is in contact with the drift region to form a heterojunction diode; the source electrode is electrically connected with the second grid electrode to form a transistor of which the local grid electrode and the drain electrode are short-circuited, and the source electrode is also electrically connected with the polycrystalline silicon region. According to the invention, the conduction loss of the third quadrant can be reduced and the switching loss can be significantly reduced.

The invention relates to a driving system, a circuit board with a first circuit and heating and ventilation equipment, and belongs to the technical field of electronics. The driving system comprises two first circuits and a driving circuit. Each first circuit is used for electrically connecting two lead terminals of one stator coil in the stepping motor, and the first circuit comprises a sub-module circuit; and the driving circuit is used for driving the two first circuits to control the stepping motor. The first circuit comprising the sub-module circuit is adopted to control the stepping motor, the current mainstream four-path Darlington circuit is replaced to control the two-phase five-wire unipolar stepping motor, the sub-module circuit has the core characteristic of improving the current amplification capability, and is provided with a high-current gain circuit, and the sub-module circuit is provided with a high-current gain circuit. And meanwhile, the saturation voltage drop problem of a traditional Darlington circuit is reduced, and compared with a conventional Darlington tube, the conduction loss of the sub-module circuit is low, so that the power consumption of a driving system can be reduced, and the power consumption of the whole heating and ventilation equipment is further reduced.

Wafer-bonded inductors, transformers, and related electronic components can be used in power electronics and provide low conduction loss in the MHz-GHz frequency range. The wafer bonding fabrication process and its thermal requirements offer relatively simple and low cost manufacturing. The resulting devices offer a unique combination of high power handling at high frequencies and small form factor.

The invention provides a power module loss determination method and device and a vehicle, and the method is applied to the technical field of power module loss evaluation, and the method comprises the steps: obtaining a preset conduction loss model and a preset switching loss model corresponding to a power module, and determining a target parameter type and at least one switching frequency group; on-off control is carried out on a power module in the inverter circuit based on the switching frequency in the switching frequency group, and a test data set corresponding to the switching frequency is acquired in the on-off control process; and constructing a target power loss model according to the test data set corresponding to the switching frequency group, a preset conduction loss model and a preset switching loss model, so as to determine the actual power loss of the power module based on the target power loss model in the operation process of the inverter circuit. According to the method, after the IGBT is applied to the inverter circuit, the construction of the target power loss model can be completed based on an actual application scene, so that the power loss calculation accuracy in the application process is improved.

The invention discloses a series adjustable voltage source type direct current power flow controller circuit, a method and a terminal, the scheme provided by the invention adopts a single bridge arm structure design in a parallel connection part, an autotransformer and a resonance groove are introduced, the single bridge arm structure can reduce the number of power devices and magnetic core elements, and the size of the power devices and the magnetic core elements is reduced. Meanwhile, the amplitude of the output alternating voltage is improved by connecting the autotransformer in series, the current stress flowing through the sub-modules is reduced, the conduction loss can be reduced, it can be ensured that the full voltage of the system is controlled within the bearable range of the sub-modules of the parallel modules, and the system reliability is improved. The parallel module and the series module are connected in cooperation with the resonant tank, soft switching operation of the sub-module is achieved, current impact in the switching process is effectively restrained, switching loss is greatly reduced, hardware configuration of a series adjustable voltage source type direct current power flow controller circuit is simplified, and the reliability of the direct current power flow controller circuit is improved. And the equipment cost and the structural complexity are reduced.

The present application relates to the field of integrated circuits, in particular to a constant root mean square voltage output circuit, the main purpose is to make the output power constant under different power supply voltage, and has the advantages of high efficiency, small area. The main scheme includes root mean square voltage generating circuit (1), first sawtooth wave generating circuit (2), first comparator (3), first inverter (4), second inverter (5), low pass filter circuit (6), second sawtooth wave generating circuit (7), second comparator circuit (8), power drive circuit (9), output stage circuit (10). The circuit of the present application is simple without complex peripheral circuit, which greatly reduces the circuit cost. The power loss is mainly derived from the conduction loss and switching loss of the first PMOS tube, which is very small compared with the output power, so the output efficiency is high.