SOI-LIGBT (silicon on insulator-lateral insulated gate bipolar transistor) device with split anode structure

Abstract

The invention discloses an SOI-LIGBT (silicon on insulator-lateral insulated gate bipolar transistor) device with a split anode structure, belonging to the technical field of semiconductor power devices. The SOI-LIBGT device comprises a substrate layer, a buried oxide layer, an N-base region, a cathode region, an anode region and a gate region, wherein the cathode region and the anode region area are positioned on the two sides of the N-base region; and the gate region is positioned on the cathode region. The anode region is split into a first anode region and a second anode region by an isolation groove, but the first anode region and the second anode region are still kept in electric connection. The first anode region ensures high hole injection efficiency when the device works; and the second anode region has a function of eliminating the negative differential resistance (NDR) area when the device is opened and provides an electron extraction channel at the turn-off transient state of the device. Through the invention, the NDR area introduced into positive characteristics in the anode short-circuit structure is eliminated on one hand, and on the other hand, the on resistance is increased while the turn-off speed is increased, and a good eclectic relationship between the conduction loss and the turn-off loss is obtained; and moreover, the manufacturing process of the device is compatible with a conventional power integrated circuit process, and additional steps or cost is not increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to conductance modulation high-voltage power devices, in particular to a SOI-LIGBT device (SOI: Silicon On Insulator, silicon on insulating layer; LIGBT: Lateral Insulated Gate Bipolar Transistor, insulated gate bipolar transistor ). Background technique [0002] SOI-LIGBT device is a key component of SOI high-voltage integrated circuits. It has the advantages of large current capacity and easy integration, but its switching speed is much faster than that of lateral double-diffused metal-oxide-semiconductor effect transistor (LDMOS, LateralDouble-diffused MOSFET. ) has a slow turn-off speed, resulting in a large switching loss, which affects the application of SOI lateral insulated gate bipolar transistors in power integrated circuits. [0003] The structure of a conventional SOI-LIGBT device is as figure 1 As shown, it includes: substrate layer 6, buried oxide l...

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Problems solved by technology

The SOI-LIGBT with this structure has a good compromise between speed and on-resistance, but because an external circuit is required to specifically apply a bias voltage to the anode auxiliary gate, and the bias voltage is a floating voltage, it will greatly increase the device and The cost of integrated circuits for device applications

[0007] The above-mentioned SOI-LIGBTs in the prior art have either slow turn-off time or large turn-on resistance, and there is a trade-off problem between turn-on resistance and turn-off time, which fails to fundamentally solve the problem of slow turn-off time or slow turn-off time of SOI-LIGBT. Disadvantages of large on-resistance

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