5results about How to "Improve hole injection efficiency" patented technology

The application discloses a SiC MOSFET device with improved diode reverse recovery characteristics and a preparation method thereof, and relates to the technical field of semiconductors.The device comprises, from bottom to top, a drain metal layer, an N-type substrate, a first N-type drift layer, a second N-type drift layer, a P-body region, a P+ contact region, an ohmic contact alloy layer and a source metal layer; a P++ layer extending downward is arranged in the middle of the top surface of the second N-type drift layer; a groove region extending into the P++ layer (4) is arranged on the top surface of the P+ contact region; a gate oxide layer is arranged in the groove region; a filled polysilicon gate is arranged in the gate oxide layer; N+ regions extending downward from the top surface of the P+ contact region into the P-body region are arranged on both sides of the groove region; an isolation medium layer is deposited on the P+ contact region, and the isolation medium layer completely covers the top end surfaces of the polysilicon gate and the gate oxide layer.The application can reduce the deep diffusion of carriers, make the recombination of the carriers better distributed in the surface region of the PN junction, and guarantee the long-term reliability of the device.

A light emitting element (2) includes a light emitting layer (23) disposed between an anode (21) and a cathode (25). The light emitting layer includes first quantum dots (31) and an additive (40). The first quantum dots are in direct contact with a layer (22) adjacent to the light emitting layer on the anode side, or are adjacent to the layer (22) via an organic ligand (41), or are adjacent to the layer (22) via a semiconductor.

This application discloses an AlGaInP red micro-LED chip with a high Al composition polarization-induced barrier layer and its fabrication method. The core innovation lies in the use of an Al composition in the barrier layer of the quantum well structure. x2 Ga 1‑x2 ) y2 InP gradually changes to Al 0.5 In 0.5 The high Al composition structure of P elevates the valence band level to 250-320 meV, significantly enhancing carrier confinement capability. Simultaneously, the barrier layer employs low-concentration p-type doping, inducing the formation of a three-dimensional hole gas through the polarization effect of the gradual Al composition change, allowing the hole concentration to break through the doping limit and avoiding the luminescence quenching problem caused by high doping. This solves the core problems of insufficient carrier confinement, low hole injection efficiency, and poor high-temperature stability in existing red Micro-LED chips. The device's external quantum efficiency, high-temperature retention rate, and long-term reliability are all significantly improved. The fabrication process is compatible with existing production lines and is applicable to multiple fields.

The application discloses a polymer light-emitting diode containing a full conjugated self-assembled monolayer and a preparation method thereof, and relates to the technical field of optoelectronic devices. The organic light-emitting diode comprises, from bottom to top, an anode, a full conjugated self-assembled monolayer, a light-emitting layer, a lithium fluoride layer and a cathode; wherein the material of the anode is selected from indium tin oxide and / or fluorine-doped indium tin oxide; and the material of the full conjugated self-assembled monolayer is a full conjugated carbazole phosphoric acid derivative of one or more of the following structures: The full conjugated carbazole phosphoric acid derivative is used as anode modification material, can form an ultrathin self-assembled film, enhance light transmittance, can adjust the ITO work function, reduce the energy difference between the anode and the light-emitting polymer, improve the hole injection efficiency, and thus improve the light-emitting efficiency. In addition, the full conjugated carbazole phosphoric acid derivative is simple to synthesize, low in price, soluble in alcohol-based environmentally-friendly non-halogenated organic solvents, and suitable for carrying out liquid-phase process film forming, and is green and environmentally-friendly.

The application discloses a spin light emitting diode based on a mixed hole transport layer and a preparation method thereof. The spin light emitting diode based on the mixed hole transport layer comprises a substrate layer, a first electrode layer, a hole injection layer, a mixed hole transport layer, a chiral perovskite active layer (or a spin injection layer and a quantum dot layer), an electron transport layer and a second electrode layer which are sequentially arranged. The mixed hole transport layer comprises at least two different materials and has the characteristics of the at least two different materials, so that the performance of the device in all aspects can be considered more than that of a single material. The different materials in the mixed hole transport layer jointly form a gradient HOMO energy level, reduce a hole injection barrier, increase a carrier injection channel, so that the device has higher photoelectric performance, and more holes reach the chiral perovskite material to realize spin polarization, so that the device has a higher electroluminescence asymmetry factor (g CP‑EL ). As can be seen, the device has higher g CP‑EL and higher photoelectric performance.