Light emitting diode with electron blocking layer in resonant tunneling structure

Abstract

The invention discloses a light emitting diode with an electron blocking layer in a resonant tunneling structure. The light emitting diode comprises a substrate, an n-type nitride layer, a multiple quantum well layer, the electron blocking layer, a p-type nitride layer and a p-type nitride ohmic contact layer, an n-type electrode which is arranged on the n-type nitride layer, and a p-type electrode which is arranged on the p-type nitride layer, wherein the substrate, the n-type nitride layer, the multiple quantum well layer, the electron blocking layer, the p-type nitride layer and the p-type nitride ohmic contact layer are arranged in order from the bottom up. The electron blocking layer is composed of a p-type doped nitride barrier layer, a non-doped nitride potential well layer, and a non-doped barrier layer which increases the hole transmittance through a resonance tunneling effect, wherein the p-type doped nitride barrier layer, the non-doped nitride potential well layer and the non-doped barrier layer are arranged in order from bottom to top. The light emitting diode provided by the invention has the advantages that electrons are effectively prevented from passing through an active region into a p-type region, which increases the injection efficiency of a hole into the active region through the electron blocking layer; a good electronic blocking effect is realized through a simple growth mode and less layer structures; and the hole injection efficiency significantly higher than a traditional electronic blocking layer structure is acquired.

Description

technical field [0001] The invention relates to the technical field of manufacturing compound semiconductor optoelectronic materials and devices, in particular to a light emitting diode with a resonant tunneling structure electron blocking layer. Background technique [0002] LED has attracted much attention due to its advantages of high efficiency, energy saving, small size and long life, and has begun to gradually replace traditional lighting methods such as fluorescent lamps and incandescent lamps. However, the rapid decline of the internal quantum efficiency of LEDs under the condition of high current injection seriously restricts the application and development of LEDs, and the existence of leakage current is considered to be a main factor leading to the decline of LED efficiency under the condition of high current density. Therefore, reducing the leakage current is very important for improving the luminous efficiency of the LED. [0003] Since electrons have a smaller...

AI Technical Summary

Problems solved by technology

However, these electron blocking layers still cannot satisfactorily solve the biggest technical problem: the more obvious the blocking effect of the p-type electron blocking layer on electron leakage, the greater the drop in hole injection efficiency, thus leading to the carrier recombination of LED devices. Efficiency and luminous efficiency are still low

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