47 results about "Electron leakage" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The invention discloses a red light Micro light emitting diode epitaxial wafer and a preparation method thereof. The epitaxial wafer comprises a GaAs substrate, an N-type layer, a multi-quantum well active layer and a P-type layer which are sequentially arranged from bottom to top, the multi-quantum well active layer comprises a plurality of AlGaInP quantum well layers and quantum barrier layers which are alternately arranged, a hole injection layer is inserted between at least part of quantum well structures, and the hole injection layer is composed of a first N-type doped sub-layer, a P-type doped sub-layer and a second N-type doped sub-layer which are connected in sequence; the materials of the three sub-layers are (Al < x > Ga < 1-x >) < 0.5 > In < 0.5 > P (x is greater than or equal to 0.5 and less than or equal to 0.9), and the doping concentration is in gradient distribution along the thickness direction. By introducing the N-P-N structure hole injection layer, the hole injection efficiency is improved, electron leakage and Mg diffusion are inhibited, and the luminous efficiency of the red light Micro LED is remarkably improved.

The invention provides a gallium nitride-based light emitting diode epitaxial structure, a preparation method thereof and an LED chip. In the epitaxial structure, a multi-stage electron-phonon scattering structure is designed for the situations of electron acceleration and hot electron transition caused by electron ballistic transport and a quantum stark effect structure in a quantum well, the forbidden band width of a quantum well layer in a multi-quantum well barrier layer is gradually increased, and an InGaN step structure is used for inhibiting electron leakage under different situations, so that the quantum efficiency is improved. And the external quantum efficiency under large current is effectively improved.

The invention provides a preparation method and application of a high-nickel ternary positive electrode material flexibly coated with a polymer, and aims to improve the cycling stability and interface compatibility of a battery. According to the technology, a liquid phase method is adopted for preparation, and a uniform and stable coating layer is formed on the surface of the high-nickel positive electrode material, so that the interface characteristic between the positive electrode and sulfide solid electrolyte is effectively improved. The coating layer is formed by compounding a polymer and a lithium salt, and has both electronic insulativity and excellent ionic conductivity. On one hand, the coating layer can prevent electron leakage, inhibit side reaction of a positive electrode-electrolyte interface and improve the interface stability; and on the other hand, the excellent lithium ion conductivity can reduce the interface impedance, accelerate the diffusion of lithium ions, improve the rate capability of the battery and prolong the long-term cycle life of the battery. Besides, by optimizing the components and the thickness of the coating layer and the interface structure of the coating layer and the electrode material, the performance of the battery is improved, and meanwhile, good process feasibility and cost effectiveness are ensured.

The invention relates to a GaN-based light emitting diode epitaxial structure with high hole injection efficiency and a preparation method thereof. The epitaxial structure sequentially comprises a first semiconductor layer, an active layer, a low-temperature P-type layer and a second semiconductor layer which are arranged on the substrate, and the low-temperature P-type layer is arranged between the active layer and the P-type GaN and sequentially comprises a hole expansion layer, a hole storage layer and a hole layer. The hole expansion layer is composed of a periodic structure formed by AlN layers and low-doped Mg-GaN layers alternately. The hole storage layer is of a periodic structure composed of a GaN layer, an InGaN layer and a low-doped Mg-AlGaN layer. The hole layer is of a periodic structure of a P-type AlInGaN layer and an MgN layer and is formed in an Mg source pulse deposition mode. According to the structure, the multi-cycle heterogeneous layer design is combined with doping regulation and deposition process optimization, the Mg acceptor activation rate and the hole injection efficiency are improved, the defect density and the electron leakage are reduced, and the structure is suitable for being applied to a small-current Micro LED.

The invention discloses a sulfide solid electrolyte and a preparation method thereof, and relates to the technical field of batteries. The sulfide solid electrolyte comprises a Li6PS5Cl inner core and a Li3PO4 coating layer, wherein the surface of the Li6PS5Cl inner core is coated with the Li3PO4 coating layer. And the Li3PO4 coating layer can effectively block moisture and oxygen and inhibit the hydrolysis reaction of Li6PS5Cl. Compared with traditional Al2O3 coating, the Li3PO4 coating layer and Li6PS5Cl are high in lattice matching degree, the interface bonding force is high, and secondary reaction caused by falling can be effectively avoided. The introduced Li3PO4 can be used as a barrier layer or redox reaction of Li6PS5Cl is inhibited through a surface chemical passivation mechanism, the electrochemical window of the Li6PS5Cl material is improved, electron leakage can be reduced, and the material is very suitable for a high-voltage positive electrode material system and can significantly improve the energy density of a battery.

The invention provides a P-SCH layer, a CW laser epitaxial structure and a preparation method of the P-SCH layer and the CW laser epitaxial structure, and belongs to the field of semiconductors. The invention provides a P-SCH layer which is of a multi-layer structure, the number of layers of the multi-layer structure is 2n, n is larger than or equal to 2, and the emission wavelength is gradually increased from the first layer to the 2n layer; the difference between the emission wavelength of the (n + 1) th layer and the emission wavelength of the nth layer is 100-120nm, and the difference between the emission wavelengths of the other adjacent layers is 10-20nm. According to the invention, the stepped structure with small emission wavelength span at two ends and large middle span between layers ensures the electron leakage rate and the hole injection rate to a great extent, thereby controlling the increase rate of the photon density along with current injection, and improving the temperature stability of the device.

According to the deep ultraviolet light-emitting diode provided by the invention, the first sub-layer in the electron blocking layer is made of AlN or AlGaN material with relatively high Al content, has a relatively large band gap, can form a relatively high potential barrier, has a very strong blocking effect on electrons, and reduces electron leakage, so that more electrons can be remained in an active region to participate in compounding with holes, and thus the light-emitting efficiency of the deep ultraviolet light-emitting diode is improved. Therefore, the number of generated photons is increased, and the output power is improved. Meanwhile, by reasonably setting the Al component content difference of the first sub-layer and the second sub-layer, the electric field distribution situation in the electron blocking layer can be adjusted, the injection speed, injection direction and the like of electrons can be optimized through the internal electric field, the electrons can be more evenly and appropriately injected into the quantum well active layer, and the quantum well performance is improved. And better matched injection with holes is formed, so that the recombination probability of electrons and holes is improved, and finally, the output efficiency of the deep ultraviolet light-emitting diode is improved.

The present invention provides a gallium nitride-based light-emitting diode epitaxial structure, a preparation method thereof, and an LED chip. In the epitaxial structure, a multi-level electron-phonon scattering structure, a stepwise increase in the bandgap width of the quantum well layer in the multi-quantum well barrier layer, and an InGaN step structure are designed to suppress electron leakage in different situations, targeting electron ballistic transport, electron acceleration caused by the quantum Stark effect structure in the quantum well, and hot electron transition. This effectively improves the external quantum efficiency under high current.

This application discloses a thin film, its preparation method, and an optoelectronic device, relating to the field of display technology. The thin film includes a first film layer, the material of which includes a first core-shell quantum dot. The first core-shell quantum dot includes a first quantum dot core and a first shell layer covering the first quantum dot core. The first film layer has a first surface and a second surface disposed opposite to each other. The thickness of the first shell layer near the first surface is less than the thickness of the first shell layer near the second surface. And / or, along the thickness direction of the thin film, the distance between the center of the first quantum dot core and the first surface is less than the distance between the center of the first quantum dot core and the second surface. The thin film provided in this application has a thinner first shell layer near the first surface, which is beneficial for improving electron injection efficiency, and a thicker second shell layer near the second surface, which is beneficial for preventing electron leakage to the hole side.

The present application discloses an LED epitaxial structure for improving luminous efficiency and a manufacturing method thereof. The LED epitaxial structure includes: a substrate, and a buffer layer, an N-GaN layer, a multi-quantum well structure, and a P-GaN layer sequentially grown on one surface of the substrate; wherein, the multi-quantum well structure is formed by alternating multiple quantum barriers and quantum wells. The quantum well includes an InN layer, an InGaN layer, a GaN layer, and an AlInGaN layer sequentially grown on the quantum barrier. The GaN layer and the AlInGaN layer constitute a Cap layer. Between the N-GaN layer and the P-GaN layer, the Cap layer adopts a growth mode with a gradual change of Al / In, which can play a role in polarization matching, form a high conduction band barrier, and reduce electron leakage. And in the initial stage of the growth of the quantum well, a growth mode of pre-passing In is adopted to form InN clusters, increase the incorporation of In, thereby reducing threading dislocations and increasing radiative recombination luminescence.

This invention discloses an AlGaN-based deep ultraviolet light-emitting diode injection structure and its application. The injection structure provided by this invention is a periodic structure, and each periodic structure includes the following components: p-Al with a gradually changing Al component proportion. m Ga 1‑m N layers; in each periodic structure, the proportion of Al component m gradually changes linearly from x to y along the growth direction, with x ranging from 0.6 to 0.85 and y ranging from 0.3 to 0.7, and x > y. The injection structure provided by this invention can utilize the negatively polarized body charge induced by the piezoelectric effect to modulate the energy band of the p-type region, reduce the hole injection barrier, and suppress electron leakage. This method integrates the p-type region of the deep ultraviolet light-emitting device into a unified periodic structure, avoiding the use of an electron blocking layer (p-EBL), improving the device carrier injection efficiency while effectively reducing the device operating voltage, which is of great significance for improving the electro-optical conversion efficiency of AlGaN-based DUV-LEDs and promoting their industrial applications.

The gallium nitride semiconductor purple light laser comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper coating layer which are sequentially arranged from bottom to top. According to the gallium nitride semiconductor purple light laser, the distribution characteristic of the drift rate of saturated electrons in the lower waveguide layer of the gallium nitride semiconductor purple light laser is specifically designed, so that the lower waveguide layer forms a carrier pinning lower waveguide layer, redundant carriers are limited in an active region under the condition of large injection, electron leakage current is eliminated, the carrier transport and injection efficiency is improved, and the quantum efficiency is improved. The bipolar conductance effect and the junction voltage saturation at the threshold are inhibited, and the series resistance and voltage are reduced; meanwhile, an acceleration hole and an electronic quasi-Fermi level are pinned, and the rate of stimulated radiation exceeding spontaneous radiation is accelerated, so that carriers are completely converted into photons to be output, symmetry breaking corresponding to a far-equilibrium state is inhibited, a deep level trap of a lower waveguide layer is reduced, and the capture effect of a depletion region is enhanced. And the problems of junction voltage jump and series resistor sinking are solved.

The invention discloses a photoelectric device and a preparation method of the photoelectric device, and the photoelectric device comprises an anode and a cathode which are oppositely arranged, a hole function layer disposed between the anode and the cathode, and an auxiliary layer disposed between the hole function layer and the cathode, the material of the auxiliary layer comprises a first metal oxide doped with a first metal element, the first metal oxide doped with the first metal element is a P-type semiconductor, the first metal oxide is an N-type semiconductor, and the first metal oxide doped with the first metal element has hole transport and electron blocking performance; excessive electrons can be prevented from leaking to the hole function layer, the problem that the hole function layer is damaged by excessive excitons is effectively solved, and then the performance of the photoelectric device is improved.

The invention belongs to the technical field of organic photoelectric semiconductor materials, and discloses a xanthene-based small organic molecule material as well as a preparation method and application thereof. According to the xanthene-based organic small molecule material structure, triphenylamine is used as a core, a large-volume xanthene spirofluorene unit, a dibenzofuran unit and a carbazole unit are introduced, and the molecular size is increased while the excellent hole mobility of the triphenylamine core is preserved, so that excitons close to an active aromatic amine core are eliminated; the micromolecule has the effect of limiting electron leakage, can keep stable under the action of electrons and excitons, is beneficial to hole injection and transmission, and has the following structural general formula. The xanthene-based small organic molecule material can effectively improve the luminous efficiency and prolong the service life of an organic electroluminescent device.

The invention discloses a light-emitting chip and a manufacturing method thereof. The light-emitting chip comprises at least one light-emitting unit and an atom repairing layer. The light-emitting unit comprises an epitaxial layer, the epitaxial layer comprises an etching surface, and the atomic repair layer at least partially covers the etching surface; the atom repairing layer is used for providing atoms for the etching surface, so that the atom repairing layer can provide atoms for the epitaxial layer and repair holes in the epitaxial layer, namely, hole filling is carried out on the epitaxial layer, and therefore, the phenomena of high-density dislocation and non-radiative recombination center generated when the epitaxial layer is etched can be improved; the phenomenon that electrons in the light-emitting unit are leaked from the side wall of the epitaxial layer is reduced, the electron concentration in the light-emitting unit is improved, and then the photoelectric conversion efficiency of the light-emitting unit can be improved, namely the light-emitting efficiency of the light-emitting chip is improved.

The application relates to the technical field of LED chips, in particular to a P-EBL layer, an epitaxial structure thereof and a growth method. The GaN-based epitaxial structure comprises a buffer layer, a UGaN layer, an NGaN layer, a stress release layer and a multi-quantum-step active region layer which are sequentially grown on a substrate, and the multi-quantum-step active region layer further has a low-temperature P-type GaN layer, a P-EBL layer and a high-temperature P-type GaN layer which are sequentially grown. The application inserts a stage P-EBL layer with different sources and different concentrations of doping into the low-temperature P-type GaN layer, can greatly improve the electron concentration and the hole concentration of the LED, and the distribution is uniform, can effectively inhibit the electron leakage current, slow down the efficiency decay, and thus the brightness is improved.

The invention discloses a red light Micro light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the field of semiconductor optoelectronic devices. The epitaxial wafer comprises an N-type GaAs buffer layer, an N-type AlGaInP current expansion layer, an N-type AlGaInP ohmic contact layer, an N-type AlInP limiting layer, an N-type AlGaInP waveguide layer, a multi-quantum well layer, a P-type AlGaInP waveguide layer, a P-type stress compensation electron barrier layer, a P-type AlInP limiting layer, a P-type AlGaInP transition layer, a P-type GaP expansion layer and a P-type GaP ohmic contact layer which are sequentially arranged on a substrate. Wherein the electron blocking layer is composed of a periodic AlP / gradient AlGaInP / Al0. 4In0. 6P / inverse gradient AlGaInP structure, so that electron leakage is effectively inhibited, non-radiative recombination is reduced, quantum efficiency and strain balance are improved, and the light emitting performance of the LED is remarkably improved.

The invention discloses a group III nitride semiconductor laser element which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top. The Fermi noodle topological layer comprises a first Fermi noodle topological layer, a second Fermi noodle topological layer and a third Fermi noodle topological layer. According to the invention, through specific design of conduction band effective state density distribution and thermal conductivity distribution, vertically downward energy band movement is formed to change a Fermi surface topological structure, disorder and instability of electron spinning are reduced, state density in a valence band is reduced, and transition probability is increased to reduce threshold current density, hole migration barrier and electron leakage; the electron hole confinement effect of the active layer is improved, and the stimulated radiation recombination efficiency is enhanced, so that the optical power and the slope efficiency are improved.

The present invention relates to a large-sized epitaxial layer, a peeling method thereof, and a peeling device. The peeling method is based on a growth substrate bonded to a target substrate. The growth substrate includes a heavily doped layer and a target layer. An etching is performed around the edge of the growth substrate to the heavily doped layer to form a first groove. A conductive ring layer is formed in the first groove to contact a working electrode. An etching is performed at a certain distance from the first groove to the heavily doped layer to form a second groove. The second groove is used to inject an appropriate amount of electrolyte solution, and a large-sized epitaxial layer hetero-integrated on the target substrate is obtained through electrochemical etching. Correspondingly, the peeling device is provided with a conductive gasket, a solution chamber, and a sealing ring located between the conductive gasket and the solution chamber. The peeling method and the peeling device can reduce the electron leakage caused by the participation of the electrode in electrolysis, shorten the current transmission path, avoid the problems of uneven current expansion of the traditional single-point electrode and low power utilization rate, and improve the efficiency and uniformity of wet peeling.

The invention belongs to the technical field of semiconductor optoelectronic device manufacturing, and particularly relates to a preparation method of a high-efficiency blue-green light LED based on Zn synergistic doping, a series of innovative and synergistic Zn doping strategies are introduced into a quantum barrier, the crystal quality is improved through ultra-thin local doping of Zn and the defect passivation effect of Zn, mild carrier limitation is achieved through Zn / Si co-doping, and the quantum barrier structure of the blue-green light LED is improved. Not only is electron leakage suppressed, but also an efficient hole injection and transport channel is constructed, so that the internal quantum efficiency is improved; zn doping is introduced, and a harmful deep-energy-level non-radiative recombination center is prevented from being formed through accurate doping design, so that the internal quantum efficiency and the luminous efficiency of the device are fundamentally improved.

The present invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof, and an LED. The light-emitting diode epitaxial wafer includes a substrate, and a buffer layer, an intrinsic GaN layer, an N-type GaN layer, an insertion layer, a transition layer, an active layer, and a P-type nitride layer that are sequentially stacked on the substrate. The insertion layer includes a plurality of nitride triangular prisms. The nitride triangular prism includes a bottom surface and a side surface. The bottom surface is attached to the N-type GaN layer, and the side surface is a semi-polar surface. The transition layer includes a semi-polar surface GaN layer and a semi-polar surface InGaN layer that are periodically and alternately stacked. The light-emitting diode epitaxial wafer provided by the present invention can successfully convert the polar surface active layer into a semi-polar surface active layer, improve the electron leakage problem, increase the hole concentration in the quantum well layer, and improve the light-emitting efficiency.

The invention discloses a data retention method of a solid state disk, the solid state disk, equipment and a storage medium, and relates to the technical field of data storage, and the data retention method of the solid state disk comprises the following steps: judging whether a main control unit is in a power-off state or not; if the main control unit is in the power-off state, timing is started, and the power-off duration is obtained; when the power-off duration reaches a preset period, power is supplied to the main control unit; the main control unit performs data reading and writing operation on the NAND unit; and stopping supplying power to the main control unit. Through the steps, the risk of irreversible data offset caused by NAND floating gate electron leakage due to long-time power failure can be reduced.

The application belongs to the technical field of red light emitting diode epitaxy and chip manufacturing, and particularly relates to an AlGaInP red light emitting diode epitaxy and chip manufacturing method and chip. A buffer layer, an AlInP etching stop layer, an n-type ohmic contact layer, an n-AlInP roughening expansion layer, a waveguide layer, a multi-quantum well layer and a p-type layer are epitaxially grown on a GaAs substrate in sequence. A hole is opened by lithography, and a multilayer p electrode is evaporated in the hole. The epitaxial wafer is low-temperature bonded with a Si substrate on which a metal layer is evaporated, and is cooled in stages. After the substrate is removed, an n electrode pad layer is lithographically evaporated. A light emitting area is formed by etching, the AlInP etching stop layer is segmented and chemically wet roughened, a passivation layer is deposited, and a single device is obtained through thinning, back gold evaporation and laser cutting. The superlattice layer has a capacitive effect, which matches the hole and electron recombination time, reduces the electron leakage rate, the AlInP roughening layer cooperates with the segmented wet roughening process, improves the light extraction efficiency, the low-temperature bonding and the staged cooling effectively release the thermal stress, and improve the reliability.

The present application relates to a kind of green light LED, including n-type layer, multiple quantum well layer, superlattice electron blocking layer, p-type layer and p-type electrode which are sequentially stacked on substrate;Multiple quantum well layer includes n periodic quantum well structure, single periodic quantum well structure is sequentially stacked by InGaN layer, first GaN layer, AlGaN interlayer and second GaN layer, and the Al component of AlGaN interlayer increases layer by layer in the direction of substrate pointing to p-type layer;Superlattice electron blocking layer is composed of m periodic AlGaN / GaN stack and AlGaN thick layer arranged on the stack;The setting of the multiple quantum well layer and superlattice electron blocking layer effectively improves the barrier height, reduces the electron leakage, relieves the moving speed of hot electron, promotes the faster diffusion of carrier, improves current congestion effect, has more optimal radiation performance and higher modulation bandwidth.

The invention discloses an epitaxial structure for improving luminous efficiency and a preparation method of the epitaxial structure. The epitaxial structure comprises a substrate, an N-type semiconductor layer, a first current expansion layer, an active layer, a second current expansion layer and a P-type semiconductor layer which are sequentially stacked from bottom to top, the first current expansion layer is an InGaN (indium gallium nitride)-GaN (gallium nitride)-AlGaN (gallium nitride) composite layer, and two-dimensional electron gas is generated on a heterogeneous interface by the InGaN / GaN and the GaN / AlGaN; the second current expansion layer is an InGaN-GaN-AlGaN composite layer with an In component and an Al component gradually changed, and through the arrangement of a double-layer InGaN-GaN-AlGaN current expansion layer structure, electron leakage is reduced, hole injection is increased, carrier transportation is balanced, and the luminous efficiency of the device is improved.

This invention belongs to the field of solid-state battery technology, specifically disclosing an in-situ grain boundary modified solid electrolyte, its preparation method, and its application. The solid electrolyte of this invention is composed of Li3InCl6 and functional additives. Functional additives are used to construct a functionalized interface layer at the electrolyte particles and grain boundaries, achieving in-situ F / P / S / N-rich soft grain boundary modification. By constructing a uniform, continuous, and low-residue functionalized interface layer, the solid electrolyte of this invention enables the composite solid electrolyte to have more stable interfacial contact, a lower tendency for interfacial side reactions, and higher short-circuit resistance on the lithium metal anode side. This solves the problems of electron leakage, interfacial side reactions, and defect-induced lithium penetration at the lithium metal anode / halide solid electrolyte interface, thereby improving the overall performance of all-solid-state batteries. This invention also provides a solid electrolyte layer prepared using this solid electrolyte and an all-solid-state lithium battery.

This invention discloses a gallium oxide power transistor containing a high-resistivity gallium oxide thin layer and its fabrication method, belonging to the field of gallium oxide transistor technology. From bottom to top, it comprises: a substrate, a buffer layer, a conductive channel layer, a high-resistivity gallium oxide thin layer, a gate dielectric layer, and a gate. The two sides of the gate are connected to the source and drain, which are electrically connected to the conductive channel layer. The resistivity of the high-resistivity gallium oxide thin layer is higher than that of the conductive channel layer. The gallium oxide power transistor of this invention effectively suppresses electron leakage from the channel layer to the gate, thereby directly reducing the gate leakage current and improving the dielectric reliability of the gate and the long-term stability of the gallium oxide power transistor.

Disclosed in the present invention is an AlGaInP yellow-green LED epitaxial wafer with high brightness, low leakage and high reliability. The epitaxial wafer comprises an N-type GaAs buffer layer, an N-type GaInP etch-stop layer, an N-type GaAs ohmic contact layer, an N-type AlGaInP current spreading layer, an N-type electron retardation layer, an N-type AlInP confinement layer, a multiple quantum well layer, a P-type AlInP confinement layer, a P-type GaP current spreading layer and a P-type GaP ohmic contact layer, which are sequentially grown on a GaAs substrate. An electron retardation layer, a graded quantum barrier thickness design, and a magnesium diffusion barrier layer are introduced, so as to effectively suppress electron leakage and magnesium diffusion, thereby reducing non-radiative recombination, and thus significantly improving the luminous efficiency and high-temperature operating stability of LEDs.

The invention discloses a red light micro light emitting diode epitaxial wafer and a preparation method thereof, and the epitaxial wafer is characterized in that an n-side electron buffer layer and an n-side AlInP transition layer are sequentially arranged between an N-type AlInP limiting layer and a multi-quantum well layer. And the n-side electron buffer layer is a periodic Al < x > In < 1-x > As < y > P < 1-y > / Al < 0.4 > In < 0.6 > P composite combination layer. According to the invention, electrons are decelerated through the superlattice structure of the n-side electron buffer layer, and stress is buffered through the n-side AlInP transition layer to improve the crystal quality of the multi-quantum well, so that electron leakage is significantly reduced, and the internal quantum efficiency of the device is improved while the working voltage is not increased.