27 results about "Electron leakage" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The invention discloses a sulfide solid electrolyte and a preparation method thereof, and relates to the technical field of batteries. The sulfide solid electrolyte comprises a Li6PS5Cl inner core and a Li3PO4 coating layer, wherein the surface of the Li6PS5Cl inner core is coated with the Li3PO4 coating layer. And the Li3PO4 coating layer can effectively block moisture and oxygen and inhibit the hydrolysis reaction of Li6PS5Cl. Compared with traditional Al2O3 coating, the Li3PO4 coating layer and Li6PS5Cl are high in lattice matching degree, the interface bonding force is high, and secondary reaction caused by falling can be effectively avoided. The introduced Li3PO4 can be used as a barrier layer or redox reaction of Li6PS5Cl is inhibited through a surface chemical passivation mechanism, the electrochemical window of the Li6PS5Cl material is improved, electron leakage can be reduced, and the material is very suitable for a high-voltage positive electrode material system and can significantly improve the energy density of a battery.

This application discloses a thin film, its preparation method, and an optoelectronic device, relating to the field of display technology. The thin film includes a first film layer, the material of which includes a first core-shell quantum dot. The first core-shell quantum dot includes a first quantum dot core and a first shell layer covering the first quantum dot core. The first film layer has a first surface and a second surface disposed opposite to each other. The thickness of the first shell layer near the first surface is less than the thickness of the first shell layer near the second surface. And / or, along the thickness direction of the thin film, the distance between the center of the first quantum dot core and the first surface is less than the distance between the center of the first quantum dot core and the second surface. The thin film provided in this application has a thinner first shell layer near the first surface, which is beneficial for improving electron injection efficiency, and a thicker second shell layer near the second surface, which is beneficial for preventing electron leakage to the hole side.

This invention discloses an AlGaN-based deep ultraviolet light-emitting diode injection structure and its application. The injection structure provided by this invention is a periodic structure, and each periodic structure includes the following components: p-Al with a gradually changing Al component proportion. m Ga 1‑m N layers; in each periodic structure, the proportion of Al component m gradually changes linearly from x to y along the growth direction, with x ranging from 0.6 to 0.85 and y ranging from 0.3 to 0.7, and x > y. The injection structure provided by this invention can utilize the negatively polarized body charge induced by the piezoelectric effect to modulate the energy band of the p-type region, reduce the hole injection barrier, and suppress electron leakage. This method integrates the p-type region of the deep ultraviolet light-emitting device into a unified periodic structure, avoiding the use of an electron blocking layer (p-EBL), improving the device carrier injection efficiency while effectively reducing the device operating voltage, which is of great significance for improving the electro-optical conversion efficiency of AlGaN-based DUV-LEDs and promoting their industrial applications.

The invention discloses a photoelectric device and a preparation method of the photoelectric device, and the photoelectric device comprises an anode and a cathode which are oppositely arranged, a hole function layer disposed between the anode and the cathode, and an auxiliary layer disposed between the hole function layer and the cathode, the material of the auxiliary layer comprises a first metal oxide doped with a first metal element, the first metal oxide doped with the first metal element is a P-type semiconductor, the first metal oxide is an N-type semiconductor, and the first metal oxide doped with the first metal element has hole transport and electron blocking performance; excessive electrons can be prevented from leaking to the hole function layer, the problem that the hole function layer is damaged by excessive excitons is effectively solved, and then the performance of the photoelectric device is improved.

The invention belongs to the technical field of organic photoelectric semiconductor materials, and discloses a xanthene-based small organic molecule material as well as a preparation method and application thereof. According to the xanthene-based organic small molecule material structure, triphenylamine is used as a core, a large-volume xanthene spirofluorene unit, a dibenzofuran unit and a carbazole unit are introduced, and the molecular size is increased while the excellent hole mobility of the triphenylamine core is preserved, so that excitons close to an active aromatic amine core are eliminated; the micromolecule has the effect of limiting electron leakage, can keep stable under the action of electrons and excitons, is beneficial to hole injection and transmission, and has the following structural general formula. The xanthene-based small organic molecule material can effectively improve the luminous efficiency and prolong the service life of an organic electroluminescent device.

The invention discloses a light-emitting chip and a manufacturing method thereof. The light-emitting chip comprises at least one light-emitting unit and an atom repairing layer. The light-emitting unit comprises an epitaxial layer, the epitaxial layer comprises an etching surface, and the atomic repair layer at least partially covers the etching surface; the atom repairing layer is used for providing atoms for the etching surface, so that the atom repairing layer can provide atoms for the epitaxial layer and repair holes in the epitaxial layer, namely, hole filling is carried out on the epitaxial layer, and therefore, the phenomena of high-density dislocation and non-radiative recombination center generated when the epitaxial layer is etched can be improved; the phenomenon that electrons in the light-emitting unit are leaked from the side wall of the epitaxial layer is reduced, the electron concentration in the light-emitting unit is improved, and then the photoelectric conversion efficiency of the light-emitting unit can be improved, namely the light-emitting efficiency of the light-emitting chip is improved.

The application relates to the technical field of LED chips, in particular to a P-EBL layer, an epitaxial structure thereof and a growth method. The GaN-based epitaxial structure comprises a buffer layer, a UGaN layer, an NGaN layer, a stress release layer and a multi-quantum-step active region layer which are sequentially grown on a substrate, and the multi-quantum-step active region layer further has a low-temperature P-type GaN layer, a P-EBL layer and a high-temperature P-type GaN layer which are sequentially grown. The application inserts a stage P-EBL layer with different sources and different concentrations of doping into the low-temperature P-type GaN layer, can greatly improve the electron concentration and the hole concentration of the LED, and the distribution is uniform, can effectively inhibit the electron leakage current, slow down the efficiency decay, and thus the brightness is improved.

The invention belongs to the technical field of semiconductor optoelectronic device manufacturing, and particularly relates to a preparation method of a high-efficiency blue-green light LED based on Zn synergistic doping, a series of innovative and synergistic Zn doping strategies are introduced into a quantum barrier, the crystal quality is improved through ultra-thin local doping of Zn and the defect passivation effect of Zn, mild carrier limitation is achieved through Zn / Si co-doping, and the quantum barrier structure of the blue-green light LED is improved. Not only is electron leakage suppressed, but also an efficient hole injection and transport channel is constructed, so that the internal quantum efficiency is improved; zn doping is introduced, and a harmful deep-energy-level non-radiative recombination center is prevented from being formed through accurate doping design, so that the internal quantum efficiency and the luminous efficiency of the device are fundamentally improved.

The invention discloses a data retention method of a solid state disk, the solid state disk, equipment and a storage medium, and relates to the technical field of data storage, and the data retention method of the solid state disk comprises the following steps: judging whether a main control unit is in a power-off state or not; if the main control unit is in the power-off state, timing is started, and the power-off duration is obtained; when the power-off duration reaches a preset period, power is supplied to the main control unit; the main control unit performs data reading and writing operation on the NAND unit; and stopping supplying power to the main control unit. Through the steps, the risk of irreversible data offset caused by NAND floating gate electron leakage due to long-time power failure can be reduced.

The application belongs to the technical field of red light emitting diode epitaxy and chip manufacturing, and particularly relates to an AlGaInP red light emitting diode epitaxy and chip manufacturing method and chip. A buffer layer, an AlInP etching stop layer, an n-type ohmic contact layer, an n-AlInP roughening expansion layer, a waveguide layer, a multi-quantum well layer and a p-type layer are epitaxially grown on a GaAs substrate in sequence. A hole is opened by lithography, and a multilayer p electrode is evaporated in the hole. The epitaxial wafer is low-temperature bonded with a Si substrate on which a metal layer is evaporated, and is cooled in stages. After the substrate is removed, an n electrode pad layer is lithographically evaporated. A light emitting area is formed by etching, the AlInP etching stop layer is segmented and chemically wet roughened, a passivation layer is deposited, and a single device is obtained through thinning, back gold evaporation and laser cutting. The superlattice layer has a capacitive effect, which matches the hole and electron recombination time, reduces the electron leakage rate, the AlInP roughening layer cooperates with the segmented wet roughening process, improves the light extraction efficiency, the low-temperature bonding and the staged cooling effectively release the thermal stress, and improve the reliability.

This invention belongs to the field of solid-state battery technology, specifically disclosing an in-situ grain boundary modified solid electrolyte, its preparation method, and its application. The solid electrolyte of this invention is composed of Li3InCl6 and functional additives. Functional additives are used to construct a functionalized interface layer at the electrolyte particles and grain boundaries, achieving in-situ F / P / S / N-rich soft grain boundary modification. By constructing a uniform, continuous, and low-residue functionalized interface layer, the solid electrolyte of this invention enables the composite solid electrolyte to have more stable interfacial contact, a lower tendency for interfacial side reactions, and higher short-circuit resistance on the lithium metal anode side. This solves the problems of electron leakage, interfacial side reactions, and defect-induced lithium penetration at the lithium metal anode / halide solid electrolyte interface, thereby improving the overall performance of all-solid-state batteries. This invention also provides a solid electrolyte layer prepared using this solid electrolyte and an all-solid-state lithium battery.

This invention discloses a gallium oxide power transistor containing a high-resistivity gallium oxide thin layer and its fabrication method, belonging to the field of gallium oxide transistor technology. From bottom to top, it comprises: a substrate, a buffer layer, a conductive channel layer, a high-resistivity gallium oxide thin layer, a gate dielectric layer, and a gate. The two sides of the gate are connected to the source and drain, which are electrically connected to the conductive channel layer. The resistivity of the high-resistivity gallium oxide thin layer is higher than that of the conductive channel layer. The gallium oxide power transistor of this invention effectively suppresses electron leakage from the channel layer to the gate, thereby directly reducing the gate leakage current and improving the dielectric reliability of the gate and the long-term stability of the gallium oxide power transistor.

Disclosed in the present invention is an AlGaInP yellow-green LED epitaxial wafer with high brightness, low leakage and high reliability. The epitaxial wafer comprises an N-type GaAs buffer layer, an N-type GaInP etch-stop layer, an N-type GaAs ohmic contact layer, an N-type AlGaInP current spreading layer, an N-type electron retardation layer, an N-type AlInP confinement layer, a multiple quantum well layer, a P-type AlInP confinement layer, a P-type GaP current spreading layer and a P-type GaP ohmic contact layer, which are sequentially grown on a GaAs substrate. An electron retardation layer, a graded quantum barrier thickness design, and a magnesium diffusion barrier layer are introduced, so as to effectively suppress electron leakage and magnesium diffusion, thereby reducing non-radiative recombination, and thus significantly improving the luminous efficiency and high-temperature operating stability of LEDs.

The invention discloses a red light micro light emitting diode epitaxial wafer and a preparation method thereof, and the epitaxial wafer is characterized in that an n-side electron buffer layer and an n-side AlInP transition layer are sequentially arranged between an N-type AlInP limiting layer and a multi-quantum well layer. And the n-side electron buffer layer is a periodic Al < x > In < 1-x > As < y > P < 1-y > / Al < 0.4 > In < 0.6 > P composite combination layer. According to the invention, electrons are decelerated through the superlattice structure of the n-side electron buffer layer, and stress is buffered through the n-side AlInP transition layer to improve the crystal quality of the multi-quantum well, so that electron leakage is significantly reduced, and the internal quantum efficiency of the device is improved while the working voltage is not increased.

The present application relates to the technical field of LED, in particular to a LED epitaxial wafer for improving light efficiency maintenance rate and a preparation method thereof. The LED epitaxial wafer comprises GaAs substrate, buffer layer, etching stop layer, N-type ohmic contact layer, electrode protection layer, roughening layer, N-type oxygen control limiting layer, first hot electron blocking layer, N-side space layer, multi-quantum well light emitting layer, P-side space layer, second hot electron blocking layer, P-type oxygen control limiting layer, transition layer, P-type window layer from bottom to top in sequence. The N-type oxygen control limiting layer and the P-type oxygen control limiting layer are both grown by means of gradually changing TMAl source bottle pressure to control oxygen content. The present application grows the limiting layer by means of changing bottle pressure to control oxygen content and grows the hot electron blocking layer. The present application not only improves the output of P / N side carrier concentration at high temperature, but also prevents electron leakage by high potential barrier. The combination of the two has the effect of double improving the light emitting efficiency of AlGaInP LED working in high temperature environment.

The invention provides an ultraviolet laser structure, and relates to the field of lasers. The laser structure comprises a substrate, a buffer layer and a lower limiting layer which are sequentially stacked from bottom to top, a lower waveguide layer, an active region, an upper waveguide layer, an alloy insertion layer and an upper limiting layer are sequentially laminated on one part of the surface of the lower limiting layer from bottom to top, and an n-side contact electrode is laminated on the other part of the surface of the lower limiting layer; a hole injection layer, a p-side contact layer and a p-side contact electrode are sequentially stacked on the upper limiting layer from bottom to top; the average forbidden bandwidth of the alloy insertion layer is larger than the average forbidden bandwidth of the upper waveguide layer and smaller than the average forbidden bandwidth of the upper limiting layer. Through the ultraviolet laser structure, electron leakage is effectively inhibited, hole injection efficiency is improved, and the performance of the laser is improved.

This invention proposes a gallium nitride-based semiconductor laser with a gradient peak rate electric field waveguide layer. The fitting curves of the In ion intensity distribution or In atom concentration distribution, the fitting curve of the peak rate electric field distribution, and the fitting curve of the saturated electron drift velocity distribution obtained from SIMS testing of the upper and lower waveguide layers with the gradient peak rate electric field all satisfy any one of the Logistic function, Logistic 5 function, or Nelder function, forming a high electric field barrier. Electrons transporting from the active region to the p-type layer must overcome this barrier height, suppressing electron leakage from the active region to the p-type layer. The low electric field matches the low-velocity transport of holes, avoiding enhanced hole scattering. High injection efficiency allows carriers in the active region to quickly reach the stimulated emission threshold. The saturated electron drift velocity gradually decreases from high to low, and the low saturated electron drift velocity on the active region side avoids punch-through leakage caused by high-speed electrons rushing through the active region.

The invention relates to the technical field of tunnel junctions, in particular to an optimization design method for improving the performance of an AlGaN-based deep ultraviolet light-emitting diode, which comprises the following steps of: selecting a hole transport layer and a p-GaN interface as a tunnel junction interface, recording material group distribution, acceptor distribution and thickness parameters, obtaining a tunnel junction thickness range, and determining the performance of the AlGaN-based deep ultraviolet light-emitting diode according to the tunnel junction thickness range. The method comprises the following steps of: selecting a hole transport layer and a p-GaN layer, calculating hole tunneling injection capability to evaluate electron leakage, screening a thickness scheme which meets injection and electron limitation requirements according to a transport result, and generating tunnel junction structure parameters, and in the method, material group distribution, acceptor distribution and layer thickness information are integrated around the interface of the hole transport layer and the p-GaN layer, so that the hole transport layer and the p-GaN layer are integrated; a tunnel junction insertion position is dominated by carrier transport characteristics, the matching degree of parameters and process realizability is enhanced in combination with the corresponding relation between an epitaxial controllable thickness range and a barrier width, the hole tunneling capability and electron leakage distribution are evaluated in parallel in thickness screening, and cooperative balance of injection enhancement and leakage suppression is realized. And the stability and reproducibility of structural parameters are improved.

The application discloses a preparation method and application of a micron quantum dot light emitting diode array device, which comprises the following steps: sequentially forming a hole injection layer, a hole transport layer, a patterned insulating layer, a quantum dot light emitting layer, an electron transport layer and a top electrode on an indium tin oxide substrate, using photoresist to prepare the patterned insulating layer, and spin-coating quantum dots to form an array light emitting layer, wherein the photoresist is used to inhibit the generation of electron leakage at pixel gaps, high resolution is realized, and record-breaking Micro-QLED array device performance is realized; and a new cross-linking hole transport layer PF8Cz-X is used to verify and solve the problem that a strong oxidizing photoacid is generated by a photoacid generator component in the photoresist, the problem of damaging the triphenylamine structure hole transport layer in the QLED device is solved through a free radical coordination combination mode, and a thermal cross-linking group is designed to avoid physical dissolution of a developing solution in a micro-nano processing process, a compatible solution processing technology is constructed, and a non-destructive photoetching system for the Micro-QLED array device is constructed.

The application discloses a method for cleaning In of V-shaped pit sidewall of InGaN-based LED, which is composed of a substrate, an N layer, a preparation layer, a quantum well InGaN / GaN light-emitting layer, and a P layer; the quantum well InGaN / GaN light-emitting layer is divided into a quantum well InGaN layer, a GaN cover layer, and a quantum barrier GaN; the GaN cover layer comprises a platform region and a V-shaped pit region; and the GaN cover layer is divided into two growth stages, that is, a first growth stage for growing the GaN cover layer by inputting a gas without H2, and a second growth stage for cleaning by inputting a gas containing H2. The growth method can clean In in the V-shaped pit sidewall of the quantum well InGaN layer and protect In in the platform region of the quantum well InGaN layer at the same time. After the In in the V-shaped pit sidewall of the quantum well InGaN layer is cleaned, the band gap of the V-shaped pit sidewall is increased, the electron leakage to the V-shaped pit is reduced, and the light-emitting efficiency of the LED is improved.

An apparatus and method for reducing quantum confinement stark effect and electron leakage in a polar compound semiconductor optical gain region is disclosed. The apparatus includes a continuously graded multi-quantum well (MQW) band structure in which quantum wells (QWs) are cascaded together with no quantum barrier (QB) in between and no more than one heterojunction interface per well. An alternative equivalent MQW band structure includes continuously graded QWs separated by continuously graded QBs, no more than one heterojunction interface per well. In both embodiments, there are no constant bandgap layers. Non-uniform periodicity and non-uniform bandgap range MQW structures are also presented. Non-uniform QW / QB thickness ratio MQW structures are also presented. Smoothly graded electron blocking layers (EBLs) with tangential band on the MQW side and no more than one heterojunction interface on the p-injection side can be used to improve electron confinement.

The application provides a gallium nitride-based long-wavelength light-emitting diode epitaxial structure and a preparation method thereof, and belongs to the technical field of semiconductor optoelectronics. The gallium nitride-based long-wavelength light-emitting diode epitaxial structure comprises a substrate and sequentially grown n-type semiconductor layers, an active layer, an electron blocking layer and a p-type semiconductor layer on the substrate; the electron blocking layer comprises a low-temperature p-type protective layer, an AlGaN sublayer and a polarization regulation layer; the Al component content in the AlGaN sublayer increases layer by layer along the growth direction, and the Mg doping concentration decreases layer by layer along the growth direction. The AlGaN sublayer is designed in a stepwise and gradual change mode of Al component content; the sublayer with low Al component content has a low conduction band barrier, thereby reducing the hindrance to hole injection; the sublayer with high Al component content forms a main electron barrier, thereby effectively blocking electron leakage; the polarization regulation layer further attracts holes and repels electrons; and the low-temperature p-type protective layer inhibits In component decomposition and diffusion.

The invention belongs to the field of preparation of new energy materials and devices, and particularly relates to a GDC electrolyte supporting type solid oxide electrolytic tank with electron-diffusion double barrier layers and a preparation method of the GDC electrolyte supporting type solid oxide electrolytic tank. According to the electrolytic tank, a YSZ electron barrier layer and a GDC diffusion barrier layer are sequentially arranged between a GDC electrolyte supporting body and an electrode, so that a composite electrolyte layer structure is formed. By introducing the electron barrier layer and the diffusion barrier layer, on the premise that the thickness of the electrolyte layer and the preparation complexity are not remarkably increased, electron leakage generated when the GDC operates under the high-temperature condition and the high-temperature diffusion reaction of elements in an electrode material to the YSZ layer are inhibited, and therefore formation of a high-impedance secondary phase is avoided. The composite electrolyte structure is simple in preparation process and can be realized by adopting a conventional printing and co-firing process, and the obtained electrolytic cell structure is beneficial to reducing the ohmic impedance of the cell and improving the operation stability, and is suitable for being applied to various solid oxide electrolytic cells (SOEC).

The application provides a P-SCH layer, a CW laser epitaxial structure and a preparation method thereof, and belongs to the field of semiconductors. The application provides a P-SCH layer, which is a multilayer structure, the number of layers of the multilayer structure is 2n, n is greater than or equal to 2, the emission wavelength increases from the first layer to the 2n layer; the difference between the emission wavelength of the n+1 layer and the emission wavelength of the n layer is 100-120 nm, and the difference between the emission wavelength of the remaining adjacent layers is 10-20 nm. The layer has a small span of two end emission wavelengths and a large span of middle emission wavelengths, a ladder structure, which greatly guarantees the electron leakage rate and the hole injection rate, thereby controlling the increase rate of the photon density with the increase of the current injection, and improving the device temperature stability.

The invention relates to a cerium oxide-based electrolyte with nano-scale double barrier layers and a preparation method of the cerium oxide-based electrolyte. The preparation method comprises the following steps: (S1) preparing a gadolinium-doped cerium oxide electrolyte layer on an anode support body of a solid oxide battery; (S2) carrying out magnetron sputtering deposition on the surface of the gadolinium-doped cerium oxide electrolyte layer by taking a zirconium-yttrium alloy as a target material in an oxygen-containing atmosphere, and then annealing at 800-1000 DEG C to form an yttrium oxide-stabilized zirconium oxide barrier layer with the thickness of 80-150nm; and (S3) carrying out magnetron sputtering deposition on the surface of the yttria-stabilized zirconia barrier layer by taking a cerium-gadolinium alloy as a target material in an oxygen-containing atmosphere, and then annealing at 600-900 DEG C to form a gadolinium-doped cerium oxide barrier layer with the thickness of 50-100nm, thereby preparing the cerium oxide-based electrolyte with the nano-scale double barrier layers. According to the invention, the nano-scale double-barrier layer can effectively inhibit the electron leakage of the bulk electrolyte, and ensures the low resistance and interface stability of a cathode / electrolyte interface at the same time.

This invention discloses a high-brightness, low-leakage, and highly reliable AlGaInP yellow-green LED epitaxial wafer. The epitaxial wafer comprises, in sequence, an N-type gallium arsenide (GaAs) buffer layer, an N-type gallium indium phosphide (GaInP) etch stop layer, an N-type GaAs ohmic contact layer, an N-type aluminum gallium indium phosphide (AlGaInP) current spreading layer, an N-type electron blocking layer, an N-type aluminum indium phosphide (AlInP) confinement layer, a multiple quantum well (MQW) layer, a P-type AlInP confinement layer, a P-type gallium phosphide (GaP) current spreading layer, and a P-type GaP ohmic contact layer grown sequentially on a GaAs substrate. By introducing an electron blocking layer, a graded quantum barrier thickness design, and a magnesium diffusion barrier layer, the invention effectively suppresses electron leakage and magnesium diffusion, reduces non-radiative recombination, and significantly improves the luminous efficiency and high-temperature operational stability of the LED.