The invention relates to a back
passivation structure capable of reducing
phosphorus internal expansion. The back
passivation structure comprises an N-type
crystal silicon wafer, and a tunneling
oxide layer, an intrinsic
amorphous silicon layer, a
silicon oxynitride layer and a
phosphorus-doped
polycrystalline silicon layer which are sequentially arranged on the back surface of the N-type
crystal silicon wafer. According to the back
passivation structure capable of reducing
phosphorus internal expansion, in the preparation process, P atoms can be diffused towards the silicon substrate after high-temperature
crystallization, the
silicon oxynitride layer serves as a first
barrier layer,
silicon oxynitride has higher barrier efficiency on the P atoms compared with
silicon oxide, most of the P atoms can be effectively blocked, and the performance of the
silicon oxynitride layer is improved. The intrinsic
amorphous silicon layer serves as a second
barrier layer, P atoms which are not blocked by the silicon oxynitride layer can be subjected to P
doping with intrinsic
amorphous silicon and are converted into doped
polycrystalline silicon with low P concentration, and the tunneling
oxide layer serves as the last
barrier layer to further block the P atoms, so that the P atoms can be effectively prevented from being internally expanded to a
crystalline silicon substrate, surface recombination is reduced, and the performance of the
crystalline silicon is improved. Therefore, the
cell conversion efficiency is improved.