Manufacturing method for nitride LED assembly

Abstract

The invention relates to a manufacturing method for a nitride LED assembly. The method has the advantages of reducing electron leakage, relieving the efficiencydroop effect, increasing hole concentration and enhancing light-emitting efficiency. The method is implemented by the adoption of the steps that (1) a transition substrate is provided; (2) a P-type semiconductor layer and a first bonding layer sequentially grow on the transition substrate; (3) a permanent substrate is provided; (4) a N-type semiconductor layer, a light-emitting layer and a second bonding layer sequentially grow on the permanent substrate; (5) the transition substrate where the P-type semiconductor layer grows and the permanent substrate where the N-type semiconductor layer and the light-emitting layer grow are bonded through the first bonding layer and the second bonding layer.

Description

technical field [0001] The invention relates to a nitride semiconductor optoelectronic device, in particular to a method for preparing a nitride light-emitting diode assembly. Background technique [0002] In recent years, light-emitting diode (LED for short) components have focused on improving brightness, and are expected to be applied in the lighting field to play the role of energy saving and carbon reduction. In general, traditional InGaN LED components include: a nitride buffer layer formed on a sapphire substrate, an n-type contact layer doped with GaN by Si, and a multi-layer quantum well structure with InGaN (Multi-Quantum- The light-emitting layer of Well (MQW for short) is a structure formed by stacking Mg-doped AlGaN electron blocking layer and Mg-doped p-type nitride contact layer in sequence. This structure has the characteristics of semiconductor components with high brightness. [0003] Since the growth temperature of the MQW light-emitting layer of the InGa...

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Problems solved by technology

[0003] Since the growth temperature of the MQW light-emitting layer of the InGaN LED structure is generally 750-850°C, the growth temperature of the P-type semiconductor layer is relatively high, generally 900-1000°C, but the higher the temperature of the P-type semiconductor layer, the greater the damage to the light-emitting layer, resulting in The recombination efficiency is low, which affects the luminous performance. However, the decrease in the temperature of the P-type layer will lead to a decrease in the crystal quality of the P-type semiconductor layer. At present, electron leakage and low hole concentration are the phenomena that lead to a sudden drop in efficiency (efficiency droop in English) important reasons, which restricts the improvement of its efficiency and wider application

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