69results about How to "Improve compound efficiency" patented technology

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses a high-voltage SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) under-gate anti-radiation reinforcing structure which comprises a drain electrode, a semiconductor epitaxial layer, a metal source electrode and a gate electrode, the semiconductor epitaxial layer comprises a substrate layer, a diffusion layer, a P well layer and a heavily doped N well layer; wherein the diffusion layer comprises a low-doped N body region I and a carrier storage layer; a groove structure is etched in the surface area of the semiconductor epitaxial layer between the adjacent lightly doped P well layers I; a P-type doped region is formed on the inner surface of the groove structure through ion implantation; and a dielectric layer is formed in the inner cavity of the P-type doped region through deposition. A groove structure is introduced into a JFET region of the SiC MOSFET device, P-type impurities are injected into the side wall and the bottom of the groove to form a P-type doped region, the groove is filled with dielectric materials such as SiO2, the groove structure transfers a strong electric field at a gate oxide interface to the bottom of the JFET region, the electric field intensity in thin gate oxide is greatly reduced, and therefore the single-particle gate penetration resistance of the SiC MOSFET device is improved.

The invention relates to a silicon-calcium laminated solar cell and a preparation method thereof, the silicon-calcium laminated solar cell comprises a silicon cell serving as a bottom cell and a perovskite cell serving as a top cell, the perovskite cell is a p-i-n type cell, the silicon cell is connected with the perovskite cell through a tunneling structure, and the silicon cell is connected with the perovskite cell through a tunneling structure. The tunneling structure comprises a TCO-1 layer close to the silicon cell, a TCO-2 layer close to the perovskite cell and a middle layer arranged between the TCO-1 layer and the TCO-2 layer, the TCO-1 layer is an n-type TCO, the TCO-2 layer is a p-type TCO, and the middle layer is made of a metal material. The tunneling structure layer of the laminated cell adopts a three-layer structure, so that the cell efficiency is effectively improved.

The invention provides a semiconductor laser element and a light-emitting device. An electron blocking layer is arranged between a second coating layer and a second waveguide layer of the semiconductor laser element; the second semiconductor layer is doped with a P-type dopant, the P-type dopant in the electron blocking layer has at least one doping concentration peak, the doping concentration of Mg at the doping concentration peak is smaller than the maximum doping concentration of the P-type dopant in the second semiconductor layer, and the P-type dopant in the electron blocking layer gradually approaches the direction of the electron blocking layer. The doping concentration of the P-type dopant in the second coating layer is provided with a plurality of subareas, and the doping concentration curve of the P-type dopant is gradually reduced along the plurality of subareas. Due to the descending trend of the Mg doping concentration in the second semiconductor layer, it can be guaranteed that the second semiconductor layer can provide enough holes, the hole injection efficiency in the quantum well layer is improved, and the light emitting efficiency is improved. Meanwhile, due to the arrangement of the second semiconductor layer, light absorption can be reduced, and the light emitting effect of the device is improved.

The invention provides a light emitting diode for improving quantum well damage and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The preparation method of the light-emitting diode comprises the following steps: forming an epitaxial layer, wherein the epitaxial layer comprises a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer which are stacked in sequence; forming a transparent conductive layer on the surface of the second semiconductor layer; etching the transparent conductive layer to form a first through hole exposing the second semiconductor layer on the surface of the transparent conductive layer; and etching the second semiconductor layer in the first through hole to form a groove exposing the first semiconductor layer on the surface of the second semiconductor layer. According to the embodiment of the invention, the problem that the multi-quantum well layer is exposed and easy to damage can be improved, and the luminous efficiency of the light-emitting diode is improved.

The invention relates to the technical field of food packaging, and discloses a flour packaging bag based on single material compositing, which comprises a middle-sealed folding bag and an eight-edge-sealed folding packaging bag, and comprises a first bag body and a first bag side applied to the middle-sealed folding bag, one side edge of the bag body is connected end to end and then is sealed to form a middle sealing part, and the other side edge of the bag body is sealed to form an eight-edge-sealed folding packaging bag. The first bag body and one end face of the bag side are connected and then are subjected to edge sealing to form a transverse sealing part, the position, located on the transverse sealing part, of the first bag body is coated with an adhesive tape, and after middle sealing is completed, the middle sealing part is attached to the adhesive tape. By adopting the unstretched PE film composite design, the tensile strength, the heat sealing performance and the tear resistance of the packaging bag are remarkably improved, the heat sealing temperature is as low as 120 DEG C or below, and the bag breaking risk is reduced; the method is suitable for complex bag shape processing; through the environment-friendly solvent-free adhesive and the dry type compound technology, the production efficiency is improved, the cost is reduced, meanwhile, efficient recycling and environment-friendly performance are achieved, and the packaging requirement of heavy objects is met.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor), and discloses a SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device for improving single-particle radiation recombination efficiency, which comprises a drain electrode, a semiconductor epitaxial layer, a metal source electrode and a grid electrode, and is characterized in that an isolation medium is deposited on the outer surface of the grid electrode; the semiconductor epitaxial layer comprises a substrate layer, an epitaxial layer, a P well layer and a heavily doped N well layer; the P well layer comprises a lightly doped P well layer and a heavily doped P well layer; p-type doped regions are formed between the adjacent lightly doped P well layers through ion implantation, and N-type impurity ions are injected into the P-type doped regions to form N-type polycrystalline silicon. According to the invention, the P-type doped region is formed by injecting P-type impurities in the SiC MOSFET device, the N-type polycrystalline silicon is formed by ion injection in the P-type doped region, and the N-type polycrystalline silicon is in short circuit with the source metal, so that the trench structure transfers a strong electric field at a gate oxide interface to the bottom of the JFET region, the electric field intensity in the thin gate oxide is greatly reduced, and the single-particle gate penetration resistance of the SiC MOSFET device is improved.

The invention provides an improved non-radiative recombination light emitting diode and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises an epitaxial layer, an insulating protection layer and a passivation layer, the surface of the epitaxial layer is provided with a groove, the insulation protection layer is at least located on the groove wall of the groove, the passivation layer is located on the surface of the insulation protection layer, and the insulation protection layer is located between the groove wall of the groove and the passivation layer. According to the embodiment of the invention, the damage to the multi-quantum well layer during the deposition of the passivation layer can be improved, and the light-emitting efficiency of the light-emitting diode is improved.

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer. The multi-quantum well layer sequentially comprises a first multi-quantum well layer, an end well layer and an end barrier layer, the first multi-quantum well layer comprises a quantum well layer and a quantum barrier layer, and the end barrier layer sequentially comprises an AlInGaN layer, a superlattice layer, an AlN layer, a first boron-containing nitride layer and a second boron-containing nitride layer; the superlattice layer comprises AlGaN layers and Mg-doped GaN layers which are alternately stacked; the first boron-containing nitride layer and the second boron-containing nitride layer are BGaN layers and / or BInGaN layers and are doped with Mg, and the Mg doping concentration of the first boron-containing nitride layer and the second boron-containing nitride layer is larger than that of the Mg-doped GaN layer. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved.

The present invention provides an automated compounding device for waterproof cloth patching, belonging to the technical field of automated equipment. The device comprises a frame, the frame comprises a frame body and a crossbeam arranged on the top of the frame body, the upper ends of both sides of the frame body are respectively provided with a feed roller and a discharge roller, and is characterized in that at least one compounding device is arranged on the frame body, the compounding device comprises a mounting frame, the upper part of the mounting frame is provided with a mounting plate, a patch placing mechanism, a wire release mechanism, a threading mechanism and an ultrasonic compounding mechanism are installed on the mounting plate, the wire release mechanism is arranged on the right side of the patch placing mechanism, the threading mechanism is arranged on the left side of the patch placing mechanism, the threading mechanism comprises a hook, the hook can be used to thread the binding tape coming out of the wire release mechanism on the patch, the ultrasonic compounding mechanism is arranged at the cloth outlet of the patch placing mechanism, the crossbeam is provided with an ultrasonic welding plate, and the ultrasonic welding plate is located above the ultrasonic compounding mechanism. The device can quickly and efficiently produce new waterproof patches with good compounding effect.

The invention relates to a light emitting diode device based on quantum dots and a preparation method thereof, and belongs to the technical field of semiconductor devices. The light-emitting diode device based on the quantum dots comprises a light-emitting layer, the materials of the light-emitting layer comprise colloidal quantum dots and an organic light-emitting material; the mass ratio of the colloidal quantum dots to the organic light-emitting material is 100: (0.1-20); and the distribution gap of the colloidal quantum dots is larger than the unit cell size of the organic light-emitting material. By selecting proper colloidal quantum dots and organic light-emitting materials for compounding, dot gap defects are reduced, non-radiative recombination is inhibited, the structure of a functional layer of a device is optimized, and the carrier injection efficiency is improved, so that the photoelectric property of a colloidal quantum dot light-emitting layer is improved.

The invention provides a sweet substance compounding method and device, electronic equipment and a storage medium, and the method comprises the steps: obtaining initial sweetness curves of different sweet substances, the initial sweetness curves being used for representing the sweet intensity change trend of the sweet substances in the time dimension; dividing the plurality of sweet substances into a first sweet substance group and a second sweet substance group based on the initial sweet curve; compounding treatment is carried out based on the first sweet substance group and the second sweet substance group to obtain a sweet substance combination, so that the difference between the sweet effect generated by the sweet substance combination and the sweet effect generated by cane sugar is smaller than or equal to a sweetness intensity threshold value, the sweet substance combination comprises at least one first sweet substance and at least one second sweet substance, so that the sweet substance compounding efficiency can be improved, and it is ensured that the sweet substance combination with the taste closer to that of cane sugar can be obtained through automatic sweet substance compounding.

The invention discloses a preparation method of a perovskite quantum dot two-dimensional array. Comprising the following steps: S1, preparing a precursor solution A; s2, synthesizing perovskite quantum dots; s3, centrifugally purifying the perovskite quantum dots once; s4, self-assembling perovskite quantum dots into a quantum dot two-dimensional array through light induction; and centrifugally purifying the perovskite quantum dot two-dimensional array once. Compared with traditional monodisperse perovskite quantum dots, the two-dimensional perovskite quantum dot array structure provides a more ordered and efficient path for charge transmission, energy loss in the transmission process is reduced, meanwhile, the ordered arrangement mode can enhance the stability of the structure to a certain extent, the influence of external factors on the optical performance is reduced, and the optical performance is improved. The unique structure is beneficial to improving the quantum yield of luminescence, the optical band gap can be more accurately regulated and controlled, and luminescence with specific wavelength is realized; the array structure enables the material to have better mechanical performance and adapt to more application scenes.

This invention discloses an epitaxial wafer for a deep ultraviolet (UV) light-emitting diode (LED) and its fabrication method, relating to the field of semiconductor optoelectronic devices. The UV LED epitaxial wafer includes a substrate and a buffer layer, an N-type AlGaN layer, an active layer, an electron blocking layer, and a P-type AlGaN layer sequentially grown on the substrate. The active layer has a periodic structure, with each period comprising a sequentially stacked quantum well layer and a quantum barrier layer, and the number of periods in the active layer is ≥2. The quantum barrier layer comprises a sequentially stacked AlInGaN layer and a P-AlInGaN layer. Implementing this invention can effectively improve the luminous efficiency of deep ultraviolet LEDs.

The application discloses a light emitting diode epitaxial wafer and a preparation method thereof and a light emitting diode, and relates to the field of semiconductor photoelectric devices. The light emitting diode epitaxial wafer comprises a substrate and a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an intercalation layer, an electron blocking layer and a P-type GaN layer arranged on the substrate in sequence; the intercalation layer comprises an AlN layer and a superlattice layer; the superlattice layer comprises P-AlN layers, P-InN layers and P-GaN layers which are stacked in sequence, and the number of periods is greater than or equal to 2. By implementing the application, the light emitting efficiency of the light emitting diode can be improved.

The invention discloses a light-emitting device, a preparation method thereof and a display device. According to the light-emitting device, the first electron transport layer close to the light-emitting layer comprises a long carbon chain ligand with the carbon atom number of 4-12, and the second ligand connected to the second electron transport layer comprises one or more of a short chain ligand with the carbon atom number of 1-3 or a hydroxyl ligand. Through the ligand arrangement of the first electron transport layer and the second electron transport layer, the distance between the electronic function layer and the light-emitting layer can be increased, the recombination efficiency of the light-emitting layer can be improved, the damage to the electronic function layer can be avoided, the service life of the light-emitting device can be prolonged, and the dissolution and penetration damage and the like of a film layer prepared in advance can be avoided; therefore, the film forming quality of the electronic function layer is improved, the possibility of current leakage of the light-emitting device is reduced, and the service life of the light-emitting device is prolonged.

The utility model provides a thermal compounding device and a battery lamination system, the thermal compounding device is used for integrally pressing a pole piece composite piece formed by laminating a pole piece and a diaphragm, and the thermal compounding device comprises a conveying mechanism for conveying the pole piece composite piece, the first thermal compounding mechanism and the second thermal compounding mechanism are sequentially arranged in the conveying direction of the pole piece composite part; the first thermal compounding mechanism is provided with a first compounding roller assembly, and the first compounding roller assembly is used for integrally pressing the middle areas of the pole piece compounding parts in the width direction; the second thermal compounding mechanism is provided with a second compounding roller assembly, and the second compounding roller assembly is used for pressing edge areas on the two sides of the pole piece compounding part into a whole in the direction perpendicular to the conveying direction of the pole piece compounding part. The thermal compounding device disclosed by the utility model can be used for improving the compatibility of the wavy edge of the pole piece compound piece, reducing the probability of bad phenomena such as bubble defects, pole piece dead folding and diaphragm wrinkling in the compounding process, and improving the compounding yield.

The invention discloses an epitaxial structure, a preparation method thereof and a light-emitting diode, and belongs to the technical field of semiconductors. The epitaxial structure comprises a substrate, a light-emitting layer formed on the substrate, an N-type current expansion layer and a P-type current expansion layer which are formed on the two sides of the light-emitting layer, and an electron blocking layer formed between the light-emitting layer and the P-type current expansion layer. Wherein the light-emitting layer comprises at least one pair of quantum well layer In < x > Ga < 1-x > N and quantum barrier layer In < y > Ga < 1-y > N, and y < lt > is greater than or equal to 0; x < 1. The material components of the quantum well layer InxGa1-xN and the quantum barrier layer InyGa1-yN both comprise indium, gallium and nitrogen, so that lattice mismatch is reduced, compression stress caused by lattice mismatch is reduced, the piezoelectric polarization effect is weakened, meanwhile, the recombination efficiency of current carriers is improved, the external quantum efficiency is improved, and the performance of the light emitting diode is improved.

The invention discloses a light emitting diode and a light emitting device, in the light emitting diode, an electron blocking layer is formed between a second semiconductor layer and an active layer, an insertion layer is formed between the electron blocking layer and the active layer, the insertion layer comprises a first layer structure, a second layer structure and a third layer structure which are stacked in sequence, the first layer structure and the third layer structure are AlN layers, and the second layer structure is an AlGaN layer or a GaN layer. According to the insertion layer, the AlGaN layer or the GaN layer is formed between the two AlN layers, meanwhile, the Al content in the AlGaN layer is controlled to be lower than 10%, due to the fact that the AlGaN layer or the GaN layer with the low Al content is narrow in energy gap, and AlN has a very wide energy gap, obvious energy gap difference is formed between the material layers of the insertion layer, the energy gap difference can form a tunneling effect, the hole injection energy level is reduced, and the hole injection efficiency is improved. Therefore, the electron hole recombination efficiency of the active layer is improved, and the light emitting effect of the light emitting diode is improved.

The invention relates to the technical field of semiconductors, and provides a light-emitting diode, a preparation method thereof and a communication system. The light emitting diode comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence. The active layer comprises at least one group of quantum well layers and quantum barrier layers which are periodically and alternately stacked; the quantum well layer comprises an In component; the active layer further comprises at least one covering layer; the covering layer is located between the quantum well layer and the quantum barrier layer; the material of the covering layer is selected from a III-V group nitride semiconductor material, and the bond energy of a chemical bond formed by a metal element contained in the III-V group nitride semiconductor material and a nitrogen element is higher than the bond energy of In-N formed by an indium element and the nitrogen element in the quantum well layer. Through the above arrangement, mutual diffusion of In atoms in the quantum well containing the In component is effectively inhibited, a clear interface of the quantum well layer is maintained, and high-speed LED communication is further realized.

The invention discloses an LED chip and a preparation method thereof. The LED chip comprises a substrate and an epitaxial structure arranged on the surface of one side of the substrate. The epitaxial structure comprises a first type semiconductor layer, a multi-quantum well layer and a second type semiconductor layer which are sequentially arranged along a first direction, and the first direction is perpendicular to the substrate and points to the epitaxial structure from the substrate; the multi-quantum well layer comprises a periodic structure formed by first film groups, and each first film group comprises a quantum barrier layer and a quantum well layer which are sequentially arranged along a first direction; the quantum barrier layer is a GaN layer, and the quantum well layer is of a periodic structure composed of a first sub-layer and a second sub-layer; the first sub-layer is an I nGaN layer with the I n content being n, the second sub-layer is an I nGaN layer with the I n content being m, and m is larger than n, so that the energy band of the quantum well layer is in a zigzag shape. The zigzag energy band can regulate and control the spatial distribution of the I < n > cluster in the quantum well layer, reduce the barrier height and increase hole injection, thereby increasing the probability of overlapping of electrons and hole wave functions, and further improving the luminous efficiency of the LED chip.

The utility model discloses a metal composite plate not easy to rust, which comprises a first metal plate and a second metal plate, the first metal plate and the second metal plate are the same in size and are placed up and down, and a middle composite plate is connected between the first metal plate and the second metal plate in a composite mode. The ends, close to each other, of the first metal plate and the second metal plate are fixedly connected with positioning rods in a matrix shape. According to the utility model, after the middle composite plate is compositely connected, the second metal plate is connected with the positioning assembly in the same way, so that the composite connection between the top end of the second metal plate and the bottom end of the middle composite plate is completed, and the preliminary compounding of the metal plates can be completed at the moment; after compounding is completed, the bottom end of the chromium-plated plate and the top end of the base plate are welded, and the limiting columns at the bottom end of the base plate correspond to the limiting holes formed in the first metal plate or the second metal plate, so that the compounding operation can be completed, the compounding operation between the metal plates can be rapidly completed, and the compounding efficiency is improved.

The invention discloses a Micro-LED epitaxial wafer, a preparation method of the Micro-LED epitaxial wafer and a Micro-LED, and relates to the field of semiconductor photoelectric devices. The Micro-LED epitaxial wafer sequentially comprises a substrate, an N-type GaN layer, a first multi-quantum well layer and a P-type GaN layer, wherein the first multi-quantum well layer comprises quantum well layers and first quantum barrier layers which are alternately stacked; the quantum well layer comprises a first GaN layer, a first InGaN layer, an In < x > Ga < 1-x > N layer and an AlN layer which are stacked in sequence; the first quantum barrier layer comprises a first AlGaN layer, an N-type Al [alpha] Ga [1-alpha] N layer, a non-doped Al [a] Ga [1-a] N layer, an N-type Al [beta] Ga [1-beta] N layer and a second GaN layer which are stacked in sequence; the proportion of the In component in the first InGaN layer is progressively increased, and the maximum value of the In component is smaller than or equal to x; and the Al component in the first AlGaN layer is gradually reduced, and the minimum value of the Al component is greater than or equal to alpha. By implementing the invention, the luminous efficiency can be improved.

The application provides a silicon controlled rectifier (SCR) device, which comprises a high-voltage P well region and a high-voltage N well region. The high-voltage P well region is sequentially provided with a first P+ doped region and a first N+ doped region. The high-voltage N well region is sequentially provided with a second P+ doped region and a second N+ doped region, and a preset normal-pressure P well region is arranged below the first N+ doped region and / or a preset normal-pressure N well region is arranged below the second P+ doped region. In the SCR device and chip, the preset normal-pressure P well region is formed below the first N+ doped region in the high-voltage P well region and / or the preset normal-pressure N well region is formed below the second P+ doped region in the high-voltage N well region, the recombination efficiency of the emitter injection carriers of the SCR device is improved, the regenerative feedback effect of the SCR device in the conduction process is inhibited, the holding current is improved, and the latch-up phenomenon of the SCR device under the electrostatic protection impact is avoided.

The invention discloses a two-region InSb-based quantum dot Mirco-LED capable of efficiently emitting near-infrared and a preparation method thereof.The preparation method comprises the steps that firstly, a pixelated pattern is formed on a transparent conductive substrate through photoetching and wet etching, and then functional layers such as a hole injection layer, a hole transmission auxiliary layer, an InSb quantum dot light-emitting layer and an electron transmission layer are prepared in sequence; and finally, manufacturing the device through vacuum evaporation of an electrode and ultraviolet curing packaging. According to the invention, an environment-friendly and nontoxic InSb quantum dot material is adopted, efficient emission of a wave band of 1000-1700nm is realized through a pixelated structural design and a multi-layer spin-coating process, and meanwhile, the device has excellent miniaturization integration level and long-term stability; the technical problem that a traditional near-infrared light-emitting device is difficult to consider the aspects of wavelength range, environmental friendliness and integration level is effectively solved.

The present application relates to a kind of oxygen plasma cleaning method and system for removing cavity ion contaminants in situ.The method first controls the pressure in the cavity below 300 mTorr, and oxygen is introduced into the cavity;Radio frequency is applied to the cavity to ionize oxygen into oxygen ions and high-energy electrons;Oxygen ions and metal ions undergo physical sputtering, causing metal ions to desorb from the surface of the cavity, while high-energy electrons and metal ions undergo neutralization reactions;Finally, the characteristic peaks of metal ions in the cavity are monitored in real time using optical emission spectroscopy, and the cleaning is completed using feedback regulation until the characteristic peaks of metal ions meet the preset conditions.Compared with the prior art, the present application has the advantages of good cleaning effect, high efficiency, environmental protection, stability and the like.

The invention discloses a high-fog and high-light-transmittance quantum dot diffusion plate and a preparation method thereof. The high-fog and high-light-transmittance quantum dot diffusion plate comprises the following components in parts by mass: PEI resin, surface carboxylated quantum dot polymer composite microspheres, antioxidants, lubricants, light stabilizers, ultraviolet absorbers and EDC. The diffusion plate prepared by the application can simultaneously obtain high light transmittance and haze, and also by adding the component EDC, the EDC reacts with the carboxyl group on the surface of the microsphere to generate an amide compound to play a defect passivation role, thereby improving the recombination efficiency of the surface state excitons of the microspheres, so that the diffusion plate has fluorescent characteristics.

The application discloses a preparation method of a starch polypeptide compound capable of delaying digestibility, and improves the content of slow-digestible starch and resistant starch in the product; the method comprises the following steps: (1) in a weakly acidic aqueous phase reaction system, a sodium periodate is used as an oxidant to perform oxidation reaction on starch raw materials, and the hydroxyl groups at C2 and C3 positions of glucose units in the starch molecules are selectively oxidized and broken to generate corresponding dialdehyde structures; a food-grade reducing agent is added into the reaction system to terminate the oxidation reaction; (2) food-grade anhydrous ethanol is added into the reaction system of step (1) to precipitate the starch, and the solid precipitate is collected; the precipitate is washed by using an ethanol solution, and finally, the washed precipitate is dried, crushed and ground to obtain an oxidized modified starch raw material; (3) the oxidized modified starch raw material is uniformly mixed with polypeptides to obtain a mixture; then, the mixture is put into a double-screw extruder to perform extrusion compounding; the material extruded from the double-screw extruder is collected, dried and crushed to obtain the starch polypeptide compound.

The present invention relates to the field of light-emitting diodes, which include a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence, wherein the first semiconductor layer and the second semiconductor layer are semiconductor layers of different types, the active layer includes a first quantum well layer and a second quantum well layer stacked in sequence, a nano-ring structure is formed on the second quantum well layer and the second semiconductor layer, the first quantum well layer emits light of a first color, the second quantum well layer and the part corresponding to the side wall of the nano-ring emit light of a second color, the first color is different from the second color, the first semiconductor layer is electrically connected to a first electrode, and the second semiconductor layer is electrically connected to a second electrode. The present invention also includes a method for manufacturing the micro-light-emitting diode, wherein nano-silicon dioxide particles are used as a light mask to make the nano-ring, which releases the original quantum well stress and reduces the quantum confined Stark effect to produce blue light.