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711results about How to "Improve compound efficiency" patented technology

Alternating current drive OLED (Organic Light Emitting Diode) circuit, driving method and display device

ActiveCN103366682AEliminates the problem of uneven lighting displayImprove display qualityStatic indicating devicesFrame timeDisplay device
The invention discloses an alternating current drive OLED (Organic Light Emitting Diode) circuit, a driving method and a display device in the technical field of display. The alternating current drive OLED circuit comprises a light emission control unit, a charging unit, a driving unit, a first storage unit, a second storage unit, a first light emitting unit, a second light emitting unit, a first voltage control unit and a second voltage control unit. Reversely connected first light emitting unit and second light emitting unit are used for alternatively emitting light in two adjacent time frames through the first light emitting unit and the second light emitting unit, only one light emitting unit emits and displays light in the same frame time, the other light emitting unit is offset reversely, and the two light emitting units are exchanged at the next frame; alternating current drive of the light emitting units is realized, and the utilization rate of energy is improved; the ageing incentive of the light emitting units is completely eliminated, the service lives of the light emitting units are greatly prolonged, the effect of internal circuit resistance on the light emitting current is eliminated, and the image display quality is perfected.
Owner:BOE TECH GRP CO LTD +1

Light-emitting diode chip and manufacturing method thereof

The invention relates to a light-emitting diode (LED) chip and a manufacturing method thereof. Materials with high heat conductivity are used as a support substrate of the LED chip, and the support substrate is sequentially provided with a bonding material layer, a reflecting layer, a transparent electrode layer, an epitaxial layer and an n-surface electrode. The manufacturing method comprises the following steps of: coating a transparent conducting layer on a sapphire substrate GaN epitaxial wafer by vaporization; coating the reflecting layer on the conducting layer by vaporization; spreading the bonding material layer on the reflecting layer, and bonding the sapphire substrate GaN epitaxial wafer to the substrate; removing the sapphire substrate by combining mechanical grinding, chemical mechanical polishing and wet-method corrosion; etching an n-GaN, an active layer and a p-GaN by using inductively coupled plasmas, removing the undoped GaN layer by etching with a potassium hydroxide solution, and coarsening the surface of the n-GaN; and coating the n-surface electrode to the n-GaN layer by vaporization to form an ohmic contact. The invention avoids the damage to the GaN-based LED epitaxial layer and the bonding layer caused by the stripping of the sapphire substrate by using laser, and the heat radiation efficiency is improved by using the substrate with high heat conductivity.
Owner:刘胜

Method for regulating river branch black and odorous water bodies by using graphene modified nano titanium dioxide photocatalyst fiber net

The invention discloses a method for regulating river branch black and odorous water bodies by using a graphene modified nano titanium dioxide photocatalyst fiber net. The method comprises the following steps: (1) preparing a reduction-oxidation graphene modified nano titanium dioxide hetero-structure composite photocatalyst; (2) preparing a water-resistant and impact-resistant aluminum-based crosslinking agent to form a homogeneous mixture with the catalyst, adding the homogeneous mixture into fiber stuff for producing a high-density polyethylene fiber net, or also preparing a high-density polyethylene fiber net provided with a nano photocatalysis film coating; (3) performing natural drying in the air, and then performing drying at a constant temperature in a drying room; and (4) arranging the graphene modified nano titanium dioxide photocatalyst high-density polyethylene fiber net on a river branch to contact with the water surface and receive illumination at the same time so as to control the river branch black and odorous water bodies. The method disclosed by the invention does not need aeration oxygenation, is energy-saving and environment-friendly, and is lower in cost and simpler in process.
Owner:钟华

Electron blocking layer structure of photoelectric device

The invention provides an electron blocking layer structure of a photoelectric device. The electron blocking layer structure is characterized in that structure matching between a quantum well and a P layer is achieved through adjusting a lattice structure and a band gap as much as possible; meanwhile, the formation of a polarized electric field is reduced, the formation of a negative charge area in an electron blocking layer is weakened as much as possible, and further the efficiency is improved; the electron leakage caused by energy band bending of the electron blocking layer and the increment of hole potential energy of the P layer are weakened. The electron blocking layer structure of the photoelectric device adopts AlInGaN or AlInGaN/InGaN super-lattice structure growth, wherein the In component is less than or equal to 10 percent; the Al component is less than or equal to 40 percent; the gradual distribution of the In component and the Al component exists in the electron blocking layer, and gradual change principles of the In component and the Al component are mutually independent; as for the electron blocking layer with an AlInGaN/InGaN super-lattice structure, the gradual change of the In component occurs in a super-lattice AlInGaN or a super-lattice AlInGaN/InGaN or in both the super-lattice AlInGaN and the super-lattice AlInGaN/InGaN.
Owner:西安利科光电科技有限公司

Pixel circuit and driving method, array substrate and display device thereof

The invention discloses a pixel circuit and a driving method, an array substrate and a display device of the pixel circuit to resolve the problem of ageing of an organic light-emitting component. The pixel circuit comprises a driving sub-circuit, a control sub-circuit and a light-emitting sub-circuit, wherein the light-emitting sub-circuit comprises a first organic light-emitting element and a second organic light-emitting element; the first organic light-emitting element and the second organic light-emitting element are connected with the driving sub-circuit; the control sub-circuit is connected with the driving sub-circuit and is used for controlling the driving sub-circuit to drive one of the first organic light-emitting element and the second organic light-emitting element to emit light in the forward direction in a bias mode in the same display stage and to drive the other of the first organic light-emitting element and the second organic light-emitting element to emit light in the reverse direction in a bias mode, and a bias state is switched in adjacent display stages. According to the pixel circuit and the driving method, the array substrate and the display device of the pixel circuit, built-in electric fields formed inside the organic light-emitting elements can be eliminated, current carrier recombination efficiency is enhanced, and the ageing problem of the organic light-emitting elements is improved.
Owner:BOE TECH GRP CO LTD +1

Gallium nitride base light-emitting diode with composite potential barrier

ActiveCN103151435AReduce the built-in electric fieldEliminate mismatchSemiconductor devicesPotential wellIndium
The invention discloses a gallium nitride base light-emitting diode with a composite potential barrier. The gallium nitride base light-emitting diode comprises a sapphire substrate, a buffering layer, an n-type gallium nitride epitaxial layer, a multiple quantum well active area, a p-type algan epitaxial layer and a p-type gallium nitride epitaxial layer, wherein the sapphire substrate, the buffering layer, the n-type gallium nitride epitaxial layer, the multiple quantum well active area, the p-type algan epitaxial layer and the p-type gallium nitride epitaxial layer are arranged sequentially from bottom to top. A p-type metal electrode is arranged on the upper surface of the p-type gallium nitride epitaxial layer. An n-type electrode is arranged on a lower platform surface of the n-type gallium nitride epitaxial layer. The multiple quantum well active area comprises 5-20 indium gallium nitride potential well layers which are arranged at intervals from bottom to top. A first kind composite potential barrier layer is arranged between every two indium gallium nitride potential barrier layers. A second kind composite potential well layer is arranged on the upper surface of an indium gallium nitride potential well layer at the top layer. According to the composite potential barrier, at the contact position of an aluminum, gallium and indium nitride layer and an InGaN potential well layer, a built-in electric field which is produced due to a polarization effect can be decreased through adjustment of aluminum (Al) and indium (In). On a contact interface between an AlInGaN layer and a GaN layer, a ratio between the Al and the In is adjusted to be 0.83:0.17, and lattices of the Al and the In are enabled to be matched.
Owner:SOUTHEAST UNIV

GaN-based III-V compound semiconductor LED (light emitting diode) epitaxial wafer and production method thereof

This application discloses a GaN-based III-V compound semiconductor LED (light emitting diode) epitaxial wafer and a production method thereof. The GaN-based III-V compound semiconductor LED epitaxial wafer structurally comprises a substrate, a low temperature GaN buffer layer, a first high temperature non-doped GaN layer and a second high temperature non-doped GaN layer, wherein an AlGaN/GaN superlattice layer is formed on the second high temperature non-doped GaN layer, a high temperature N type GaN layer is formed on the AlGaN/GaN superlattice layer, a stress release layer, an MQW protection layer, a P type electron barrier layer and a high temperature P type GaN layer are formed on the high temperature N type GaN layer, a contact layer is formed on the high temperature P type GaN layer, SiN mask/N type GaN layers are periodically inserted into the high temperature N type GaN layer, and the number of periods of the SiN mask/N type GaN layers ranges from 5 to 20. The GaN-based III-V compound semiconductor LED epitaxial wafer has the advantages of signally improving antistatic ability, effectively enhancing recombination efficiency of current carriers, and improving internal quantum efficiency of an LED.
Owner:XIANGNENG HUALEI OPTOELECTRONICS

Perovskite LED device based on surface ligand control and preparation method thereof

The invention relates to a method for preparing a perovskite LED device based on surface ligand control, including the following steps: applying an organic solution of a hole injection layer materialto the surface of a conductive substrate, and forming a hole injection layer after annealing; dissolving cesium bromide, lead bromide and phenethylamine bromide in an organic solvent under the effectof a 3-(decyl dimethyl ammonium) propane-1-sulfonic acid inner salt surfactant to obtain a perovskite precursor solution, applying the perovskite precursor solution to the surface of the hole injection layer and obtaining a perovskite film after annealing; treating the surface of the perovskite film with an alkylamine organic solution to form a light-emitting layer; and successively preparing an electron transport layer, an electron injection layer and a metal cathode electrode on the surface of the light-emitting layer. The method of the invention is simple and convenient, has a wide range ofmaterials and good repeatability, and can achieve the device performance. Through surface ligand exchange, the flatness and uniformity of the perovskite film are improved, the formation of defects iseffectively suppressed, and the overall performance of the device is significantly improved.
Owner:SUZHOU UNIV

Method for designing quantum barrier used for enhancing light emitting diode (LED) brightness

The invention discloses a method for designing a quantum barrier used for enhancing light emitting diode (LED) brightness. An epitaxial slice structure of an LED comprises a substrate layer, a low-temperature GaN buffer layer, a non-doped high-temperature GaN buffer layer, a Si doped n-type GaN layer, a luminescent layer multiple quantum well, a low-temperature p-type GaN layer, a p-type AlGaN electronic barrier layer, a high-temperature p-type GaN layer and a p-type GaN contact layer in sequence from bottom to top. The luminescent layer multiple quantum well comprises a low-temperature shallow quantum well and a low-temperature multiple quantum well luminescent layer from bottom to top, wherein the multiple quantum well luminescent layer is divided into three parts, namely a first quantum well barrier layer, a second quantum well barrier layer and a third quantum well barrier layer. The first quantum well barrier layer grows in the mode that aluminum components are not doped; the second quantum well barrier layer grows in the mode that 10% of the aluminum components are doped, and the total thickness is kept unchanged; the third quantum well barrier layer grows in the mode that 5%-8% of the aluminum components are doped, and the total thickness is also kept unchanged. By means of the method, GaN series light emitting diodes with high luminous intensity can be obtained.
Owner:合肥彩虹蓝光科技有限公司

Epitaxial wafer of light emitting diode and preparation method thereof

The invention discloses an epitaxial wafer of a light emitting diode and a preparation method thereof, and belongs to the field of the light emitting diode manufacture. A combined inserting layer installed between an electron blocking layer and an InGaN/GaN multi-quantum well layer can be cooperated with the last one GaN quantum barrier layer doped with an Al element in the InGaN/GaN multi-quantumwell layer. The last one GaN quantum barrier layer doped with the Al element can play a partial effect of blocking an electron, the electron is blocked in the InGaN/GaN multi-quantum well layer, andan AlN layer and an InGaN layer with higher potential barriers in the combined inserting layer can also play the effect of blocking the electron. In addition, because a magnesium element is doped in the AlN layer and the InGaN layer, the AlN layer and the InGaN layer can be used as a hole source, the electron can be blocked in the InGaN/GaN multi-quantum well layer, and more holes can enter the InGaN/GaN multi-quantum well layer and are combined with the electrons so as to illuminate, and combination efficiency of the electrons and holes in the InGaN/GaN multi-quantum well layer is improved, so luminous efficiency of the light emitting diode is improved.
Owner:HC SEMITEK ZHEJIANG CO LTD
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