16results about How to "Improve compound efficiency" patented technology

This invention discloses an epitaxial wafer for a deep ultraviolet (UV) light-emitting diode (LED) and its fabrication method, relating to the field of semiconductor optoelectronic devices. The UV LED epitaxial wafer includes a substrate and a buffer layer, an N-type AlGaN layer, an active layer, an electron blocking layer, and a P-type AlGaN layer sequentially grown on the substrate. The active layer has a periodic structure, with each period comprising a sequentially stacked quantum well layer and a quantum barrier layer, and the number of periods in the active layer is ≥2. The quantum barrier layer comprises a sequentially stacked AlInGaN layer and a P-AlInGaN layer. Implementing this invention can effectively improve the luminous efficiency of deep ultraviolet LEDs.

The application discloses a light emitting diode epitaxial wafer and a preparation method thereof and a light emitting diode, and relates to the field of semiconductor photoelectric devices. The light emitting diode epitaxial wafer comprises a substrate and a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an intercalation layer, an electron blocking layer and a P-type GaN layer arranged on the substrate in sequence; the intercalation layer comprises an AlN layer and a superlattice layer; the superlattice layer comprises P-AlN layers, P-InN layers and P-GaN layers which are stacked in sequence, and the number of periods is greater than or equal to 2. By implementing the application, the light emitting efficiency of the light emitting diode can be improved.

The invention relates to the technical field of semiconductors, and provides a light-emitting diode, a preparation method thereof and a communication system. The light emitting diode comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence. The active layer comprises at least one group of quantum well layers and quantum barrier layers which are periodically and alternately stacked; the quantum well layer comprises an In component; the active layer further comprises at least one covering layer; the covering layer is located between the quantum well layer and the quantum barrier layer; the material of the covering layer is selected from a III-V group nitride semiconductor material, and the bond energy of a chemical bond formed by a metal element contained in the III-V group nitride semiconductor material and a nitrogen element is higher than the bond energy of In-N formed by an indium element and the nitrogen element in the quantum well layer. Through the above arrangement, mutual diffusion of In atoms in the quantum well containing the In component is effectively inhibited, a clear interface of the quantum well layer is maintained, and high-speed LED communication is further realized.

The invention discloses a two-region InSb-based quantum dot Mirco-LED capable of efficiently emitting near-infrared and a preparation method thereof.The preparation method comprises the steps that firstly, a pixelated pattern is formed on a transparent conductive substrate through photoetching and wet etching, and then functional layers such as a hole injection layer, a hole transmission auxiliary layer, an InSb quantum dot light-emitting layer and an electron transmission layer are prepared in sequence; and finally, manufacturing the device through vacuum evaporation of an electrode and ultraviolet curing packaging. According to the invention, an environment-friendly and nontoxic InSb quantum dot material is adopted, efficient emission of a wave band of 1000-1700nm is realized through a pixelated structural design and a multi-layer spin-coating process, and meanwhile, the device has excellent miniaturization integration level and long-term stability; the technical problem that a traditional near-infrared light-emitting device is difficult to consider the aspects of wavelength range, environmental friendliness and integration level is effectively solved.

The present application relates to a kind of oxygen plasma cleaning method and system for removing cavity ion contaminants in situ.The method first controls the pressure in the cavity below 300 mTorr, and oxygen is introduced into the cavity;Radio frequency is applied to the cavity to ionize oxygen into oxygen ions and high-energy electrons;Oxygen ions and metal ions undergo physical sputtering, causing metal ions to desorb from the surface of the cavity, while high-energy electrons and metal ions undergo neutralization reactions;Finally, the characteristic peaks of metal ions in the cavity are monitored in real time using optical emission spectroscopy, and the cleaning is completed using feedback regulation until the characteristic peaks of metal ions meet the preset conditions.Compared with the prior art, the present application has the advantages of good cleaning effect, high efficiency, environmental protection, stability and the like.

The application discloses a preparation method of a starch polypeptide compound capable of delaying digestibility, and improves the content of slow-digestible starch and resistant starch in the product; the method comprises the following steps: (1) in a weakly acidic aqueous phase reaction system, a sodium periodate is used as an oxidant to perform oxidation reaction on starch raw materials, and the hydroxyl groups at C2 and C3 positions of glucose units in the starch molecules are selectively oxidized and broken to generate corresponding dialdehyde structures; a food-grade reducing agent is added into the reaction system to terminate the oxidation reaction; (2) food-grade anhydrous ethanol is added into the reaction system of step (1) to precipitate the starch, and the solid precipitate is collected; the precipitate is washed by using an ethanol solution, and finally, the washed precipitate is dried, crushed and ground to obtain an oxidized modified starch raw material; (3) the oxidized modified starch raw material is uniformly mixed with polypeptides to obtain a mixture; then, the mixture is put into a double-screw extruder to perform extrusion compounding; the material extruded from the double-screw extruder is collected, dried and crushed to obtain the starch polypeptide compound.

This invention proposes a simple and easy-to-operate method for preparing core-shell quantum dots that suppress Auger recombination, and develops Mn-doped CsPbCl3@Cs4PbCl6 core-shell nanocrystals. The Auger suppression performance was studied using wavefunction engineering. The method includes the following steps: ① Synthesizing CsPbCl3 nanocrystals via thermal injection. ② Forming a Cs4PbCl6 shell nanocrystal on the CsPbCl3 nanocrystals. An oleic acid solution containing Cs is added to the CsPbCl3 nanocrystals; Cs ions tend to react with free Pb ions, and the Cs4PbCl6 shell nanocrystals grow epitaxially on the surface of the CsPbCl3 core nanocrystals. ③ Injecting a MnCl2 precursor into the pre-synthesized core-shell nanostructure at room temperature yields highly efficient Mn-emitting nanocrystals with promising applications in optoelectronics, generating significant social and economic benefits.

The application provides a triarylamine compound and an organic electroluminescent device thereof, and relates to the technical field of organic electroluminescent materials.The triarylamine compound has good thermal stability, high hole mobility and a suitable HOMO energy level, and is used as a hole transport material in the organic electroluminescent device, which can effectively reduce the hole transport resistance, improve the injection and transport efficiency of holes in the device, make the efficient recombination of electrons and holes in the light-emitting layer, effectively reduce the driving voltage of the device, improve the light-emitting efficiency of the device, reduce the movement of excitons to the outside of the light-emitting layer, avoid interface light emission, reduce the loss of the device, and prolong the service life of the device.The triarylamine compound can be applied to the fields of display, illumination and organic solar cells.

The application discloses a preparation method of silica nano-aerogel heat-insulating paper, which comprises the following steps: (1) covering a permeable membrane interlayer on the surface of each fiber paper; (2) preparing a silica aerogel prepolymer mixed solution; (3) compounding the silica aerogel prepolymer mixed solution with the fiber paper to obtain wet silica aerogel paper; and (4) performing solvent replacement, hydrophobic modification and drying on the wet silica aerogel paper. The aerogel paper is prepared by covering the permeable membrane interlayer on the surface of the fiber paper and applying gravity in the gel process, so that the problems of the brittleness of the aerogel itself, the low strength of the fiber material itself, the damage of the prepared ultra-thin aerogel paper (less than or equal to 0.3 mm) and the like are solved, the gel absorption amount of the fiber paper is effectively controlled, and the flatness, thickness and thickness size deviation of the aerogel paper are ensured; and the prepared silica nano-aerogel heat-insulating paper is flat in appearance and free of defects such as wrinkles, holes and cracks which affect use.

The utility model provides a multi-strain organic fertilizer compounding device. The multi-strain organic fertilizer compounding device comprises a mixing tank, a fixing plate, a supporting rod, a discharging pipe, a sealing cover, a driving motor, a filling pipe, a stirring and turning pushing frame structure and an observable quantitative adding box structure. The mixing tank, the sealing cover, the driving motor, the rotating pipe, the connecting block, the material pushing plate, the spiral plate, the pushing frame and the reinforcing rod are matched with one another, so that materials can be turned over through the spiral plate in the processing process, and the materials at the upper part and the lower part are respectively pushed through the pushing frame and the material pushing plate in the material turning process; the purpose of improving the organic fertilizer compounding efficiency is achieved; the mixing tank, the sealing cover, the adding box, the observation sheet, the conveying pipe, the adding valve and the shielding cover are matched with one another, so that the purpose of conveniently performing quantitative observation on material adding in the compounding process through the matching of the adding box and the observation sheet in the use process and the matching of scale marks arranged on the surface of the observation sheet is achieved.

This utility model discloses a sea cucumber feed compounding device, comprising: two supports; rotating shafts, each rotatably mounted on the supports; and a mixing tank, which is fixedly mounted between the two rotating shafts. Compared with the prior art, the compound mixing mechanism not only enables conventional mixing of materials but also promotes the upward movement of materials at the bottom of the mixing tank, achieving multi-dimensional mixing of materials in both vertical and horizontal directions, significantly improving the mixing effect and making the mixed materials more uniform. The feeding mechanism allows additives to be added to the mixing tank in a rotating manner, with the additives being sprayed out from the guide channel on the follower cylinder, no longer accumulating in one place but evenly sprinkled on the upper layer of the material. This uniform addition method significantly shortens the time required for the additives and main ingredients to mix evenly, thus significantly improving the efficiency of sea cucumber feed compounding.

The invention provides a heterocyclic compound and an organic electroluminescent device thereof, and particularly relates to the technical field of organic photoelectric materials. When the compound is used as a light-emitting layer main body material in the organic light-emitting device, the mobility of electrons and holes can be improved, the recombination efficiency of the electrons and the holes can be improved, and meanwhile, the energy loss can be limited, so that the photoelectric property of the organic light-emitting device is improved. The compound provided by the invention has good thermal stability and refractive index when being used as a covering layer material, can reduce the loss of light reflected by a nearby electrode during luminescence, effectively improves the stability of a film layer, and improves the performance of a device. The preparation method of the compound is simple, raw materials are easy to obtain, and the compound can be widely applied to the fields of organic thin film transistors, panel display and the like and has good application effects and industrialization prospects.

This invention provides a high-voltage enhancement-mode HEMT device that suppresses current collapse, comprising a substrate, a GaN layer, and an Al layer. x Ga 1‑x N layer, Al x Ga 1‑x From left to right, the N-layer consists of a source, a P-GaN gate, a P-GaN hole injection structure, and a drain. A high-resistivity capping layer covers the P-GaN gate, gate metal, P-GaN hole injection structure, the upper surface of the drain, and the Al layer between the P-GaN gate source side and the drain. x Ga 1‑x In the upper surface region of the N-layer, the hole injection structure in this invention can be sufficiently close to the gate, allowing for more complete surface trap recombination. Simultaneously, it avoids long-distance surface charge transport, resulting in faster surface charge transfer and improved surface trap recombination efficiency, achieving the optimal hole injection effect. This invention suppresses current collapse without shortening the device drift region, thus avoiding a decrease in device breakdown voltage.

The utility model relates to the technical field of compounding devices, in particular to a compounding device for multilayer wires, which comprises a support, a plurality of rotating cylinders are rotatably connected to two side surfaces of the support, a plurality of servo motors are fixedly connected to one side surface of the support, four first electric heating rollers are arranged among the plurality of rotating cylinders, and a plurality of second electric heating rollers are arranged among the four first electric heating rollers. A plurality of annular guide grooves are formed in each first electric heating roller; four heating assemblies are arranged on the support, each heating assembly comprises an upper electric heating roller and a lower electric heating roller which are rotationally installed on the support, and a fixing rod is arranged on the support. According to the utility model, a plurality of groups of four-layer wires can be conveniently compounded at the same time, the compounding efficiency is higher, the wires are uniformly and fully heated, so that the wires can be better fused together, the compounding effect is better, the firmness degree of the compounded wires is higher, and the compounding treatment of the multi-layer wires is facilitated.

The application discloses a preparation method of a buried heterojunction for a distributed feedback laser, which can reduce the threshold current of a laser, greatly improve the consistency of a device and has strong process compatibility. The method introduces a selective Zn diffusion treatment process step after growing a buried layer on a top cladding layer. A high-concentration p-type region formed through the diffusion step can form a more ideal ohmic contact with a metal electrode. In addition, an extra thin gold layer with a thickness of 5-10 nm is evaporated on the top cladding layer, which can significantly reduce the ohmic contact. The ohmic contact is reduced from 1.2e ‑5 to 4.5e ‑7 , about 26.6 times. In addition, while reducing the ohmic contact, the current limiting effect is significantly enhanced. The threshold current of the laser prepared by the method can be reduced to 15-18 mA. In addition, the method has low process difficulty, high operability, high freedom and greatly improved device consistency. Moreover, the method has strong process compatibility. The method is suitable for popularization and application in the field of semiconductor lasers.

This utility model discloses a wrinkle-resistant tension co-regulating device for high-elasticity fabric composites, comprising a U-shaped plate, a fixed roller rotatably connected to the upper inner side of the U-shaped plate, and grooves provided in the middle of the left and right side walls of the U-shaped plate, with sliders slidably connected to the inner side of each groove. A movable roller is rotatably connected to the middle of the side wall where the two sets of sliders are close to each other, and connecting rods are fixedly connected to the tops of the two sets of sliders on opposite sides. The connecting rods are respectively fixedly connected to the left and right ends of the middle of the bottom wall of a lifting plate, and a lifting cylinder is fixedly connected to the middle of the top wall of the U-shaped plate. This wrinkle-resistant tension co-regulating device for high-elasticity fabric composites allows the fabric to be smoothed before the U-shaped plate moves to the front of the placement plate. The fabric then falls between the fixed and movable rollers and lays flat on the surface of the placement plate. At this point, the lower pressure plate is raised, and new fabric can then be placed on the surface of the placement plate and smoothed, eliminating the need for manual smoothing and improving the practicality of the wrinkle-resistant device.