Electron blocking layer structure of photoelectric device

Abstract

The invention provides an electron blocking layer structure of a photoelectric device. The electron blocking layer structure is characterized in that structure matching between a quantum well and a P layer is achieved through adjusting a lattice structure and a band gap as much as possible; meanwhile, the formation of a polarized electric field is reduced, the formation of a negative charge area in an electron blocking layer is weakened as much as possible, and further the efficiency is improved; the electron leakage caused by energy band bending of the electron blocking layer and the increment of hole potential energy of the P layer are weakened. The electron blocking layer structure of the photoelectric device adopts AlInGaN or AlInGaN / InGaN super-lattice structure growth, wherein the In component is less than or equal to 10 percent; the Al component is less than or equal to 40 percent; the gradual distribution of the In component and the Al component exists in the electron blocking layer, and gradual change principles of the In component and the Al component are mutually independent; as for the electron blocking layer with an AlInGaN / InGaN super-lattice structure, the gradual change of the In component occurs in a super-lattice AlInGaN or a super-lattice AlInGaN / InGaN or in both the super-lattice AlInGaN and the super-lattice AlInGaN / InGaN.

Description

Technical field: [0001] The invention belongs to the technical field of photoelectric device design, and relates to a structural design of an electron blocking layer in an epitaxial structure of a photoelectric device. Background technique: [0002] In the prior art, a layer of AlGaN structure is inserted between the quantum well structure and P-type GaN as an electron-blocking layer (Electron-Blocking Layer: EBL for short) to block electrons from entering the P layer, thereby reducing device leakage and improving device efficiency. For the AlGaN resistive barrier layer, we have done a lot of research. For example, Chinese patent application 201110150996.0 "A LED structure using a graded electron blocking layer of aluminum composition" mentions an LED structure using a graded electron blocking layer of aluminum composition, in which the side that is in contact with the outer GaN barrier of the multi-quantum well layer Al with low Al composition x Ga 1-x N, 0≤x≤0.1, the si...

AI Technical Summary

Problems solved by technology

[0007] However, it is impossible for a single InAlGaN material to achieve a complete match between the lattice structure and the forbidden band width and the structure between the quantum well and the P layer through the adjustment of the In and Al components. Decreased hole injection efficiency and increased probability of electron leakage

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