104 results about "Device leakage" patented technology

LED transceiver front end circuitry and related methods are disclosed that use an LED or LEDs to transmit light in a transmit state and to receive incident light in a receive state while helping to reduce effects of power supply noise and ripple and device leakage currents on incident light measurements in applications where such conditions exist. In the disclosed embodiments and implementations, a controlled voltage is applied across an LED or LEDs or a reference voltage is applied to an LED chain or LED to help reduce the effects of power supply noise and ripple and device leakage currents on incident light measurements during a receive state of operation. Further, with respect to the LED chain, one or more resistors are coupled in parallel to the LEDs in the LED chain.

A method and structure for preventing device leakage. The method and structure includes forming a blocking layer of preferably nitride over a junction between a source / drain region and a shallow trench isolation. A silicide is then formed over a landed area of the source / drain region but is blocked by the blocking layer from forming over the junction between the source / drain region and the shallow trench isolation. This prevents device leakage at this location.

The invention includes a laterally double-diffused metal-oxide semiconductor (LDMOS) having a reduced size, a high breakdown voltage, and a low on-state resistance. This is achieved by providing a thick gate oxide on the drain side of the device, which reduces electric field crowding in the off-state to reduce the breakdown voltage and forms an accumulation layer in the drift region to reduce the device resistance in the on-state. A version of the device includes a low threshold voltage version with a thin gate oxide on the source side of the device and a high threshold voltage version of the device includes a thick gate oxide on the source side. The LDMOS may be configured in an LNDMOS having an N type source or an LPDMOS having a P type source. The source of the device is fully aligned under the oxide spacer adjacent the gate to provide a large SOA, to reduce the device size and to reduce the device leakage.

The invention discloses a signal processing and calculating method for insulation dielectric dissipation factors with the characteristics of high precision and immunity to electromagnetic interference, which developed by aiming at high-voltage electric-power capacitive equipment for realizing insulation online monitoring technology in the equipment life cycle management of an intelligent power grid. In the scheme, based on distributing type remote synchronous signal collection and through carrying out complete-frequency discrete sampling on the leakage current and the busbar voltage of the high-voltage capacitive equipment in a timing way, an infinite impulse response filter group (IIRG) consisting of a point-pass filter, a low-pass filter, a high-pass filter and a necessary point-resistance filter is arranged by aiming at the interference characteristics of high-voltage electric power equipment, input signal sequences adaptive to the time constants of the IIRG are obtained through signal extension, filter output with 50Hz of power frequency signals is obtained through the IIRG, the phasor phase difference of the leakage current and the busbar voltage of the high-voltage capacitive equipment are obtained with a phase algorithm, and further the insulation dielectric dissipation factors with high precision are obtained.

In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes.

A turbine engine ignition exciter circuit applies energy stored in the exciter tank capacitor to the load (igniter plug) through a thyristor type semiconductor switching device that minimizes leakage current at elevated operating temperatures. The semiconductor switching device is periodically activated by a trigger circuit to initiate discharge of energy stored in exciter tank capacitor to mating ignition lead and igniter plug. The circuit operates at a modest, for example, approximately 1.8 kV, tank circuit voltage to further reduce switching device leakage current related stresses at elevated temperatures allowing relatively long capacitor charge cycles, increased upper operating temperature capability and improved reliability. The circuit uses a low side switch circuit topology for releasing energy from said capacitor to ground whereby negative polarity energy is applied to the exciter.

The invention discloses a device and a method for evaluating the gas micro-leakage of a sealing device and belongs to the field of sealing device leakage test. The device comprises a cavity, a sealing device, vacuumizing equipment, a vacuum gauge, a vacuum display and a computer. The cavity and the sealing device are connected through a connecting joint. The cavity and the vacuum gauge are connected through another connecting joint. The cavity and the vacuumizing equipment are connected through a third connecting joint. The vacuum gauge is connected with the vacuum display through a cable. The vacuum display is connected with the computer through another cable. Each connecting joint is provided with a stop valve. The vacuumizing equipment is connected with the computer through a third cable. The computer is provided with the vacuum degree testing and analyzing software and the vacuumizing control software. The invention further discloses a gas micro-leakage evaluation method based on the gas micro-leakage evaluation device. According to the device and the method for testing and evaluating the sealing performance of the sealing device, the advantages of high test precision, high sensitivity, adjustable sensitivity and the like are realized. Meanwhile, a quantitative result can be given for the micro-leakage situation.

The invention provides an intelligent early warning system for monitoring device leakage, capable of achieving rapid early warning processing of automatic identification and alarm information sendingof the system after liquid leakage of the device occurs at night and under severe weather conditions. The intelligent early warning system comprises a video acquisition module, a video image enhancement module, a data labeling module, a model construction module, a model learning module, a data verification module and a leakage early warning module. The video image enhancement module respectivelyprocesses video images at night, in rainy days and in haze weather conditions by adopting a self-adaptive enhancement algorithm based on closed operation, a fuzzy C-means algorithm and a Retinex algorithm. The data labeling module is used for classifying the liquid leakage states into three types, namely permeation, leakage and injection. The model construction module constructs a five-layer deepneural network model, acquires characteristic parameters through supervised training, and verifies and optimizes the deep neural network through the data verification module. The intelligent early warning system for monitoring device leakage also has the advantages of timely response, high intelligent degree and the like.

The invention discloses a hydraulic device leakage measuring device, which comprises an oil tank, a first hydraulic pump, a second hydraulic pump, a first three-way valve, a first two-way valve, a second two-way valve, a flow rate sensor and a second three-way valve, wherein the second three-way valve is used for connecting a hydraulic device, the two ends of the first three-way valve are inlets, another end is an outlet, the inlets at the two ends are either-or paths, one end of the second three-way valve is an inlet, the other ends are outlets, the outlets at the two ends are either-or paths, the oil tank is respectively connected with the two inlets of the first three-way valve through the first hydraulic pump and the second hydraulic pump via pipelines, the outlet of the first three-way valve is respectively connected with one end of the first two-way valve and the second two-way valve through pipelines after the flow division, the other end of the first two-way valve is connected with the flow rate sensor, is then communicated with the other end of the second two-way valve, and is connected with one inlet of the second three-way valve, and the two outlets of the second three-way valve are respectively connected with the hydraulic device and the oil tank.

The invention discloses an equipment leakage detection experiment system and method under pressure environment maintenance condition. The equipment leakage detection experiment system comprises a water replenishment system, a water storage system, a water level maintenance system and a heating experiment device, wherein the water replenishment system is connected with the water storage system through a water replenishment pipeline, so as to replenish water for the water storage system; the water storage system is connected with the water level maintenance system through a water delivery pipeline, so as to remain the water level unchanged; an adjusting valve and a flowmeter are arranged on the water delivery pipeline; the water level maintenance system is connected with the heating experiment device through a communication pipeline, so as to supply water stably; a communication stop valve is arranged on the communication pipeline; the heating experiment device comprises a pressing experiment container; a heating part is arranged in the pressing experiment container; a pressure transmitter is arranged at an inlet position of the pressing experiment container to monitor a pressure value of the heating part in real time; a discharge pipeline is arranged at an outlet position of the pressing experiment container; a discharge stop valve is arranged at the end of the discharge pipeline; a pipeline inclined upward is arranged at the tail end of the discharge pipeline, and the range of the inclination angle is 20-60 degrees.

The invention discloses an electrified pressure leakage blocking device and method for gas leakage of sulfur hexafluoride electrical equipment. The device comprises a cutoff valve arranged at the leakage point of the sulfur hexafluoride electrical equipment, an insulating fixing rod used for moving the cutoff valve to the leakage point of the sulfur hexafluoride electrical equipment and an insulating glue-injecting gun used for fixing the cutoff valve to the leakage point of the sulfur hexafluoride electrical equipment. The device and method have the advantages that when the leakage point of the sulfur hexafluoride electrical equipment is electrified or the safe distance between a leakage blocking maintainer and the electrified portion does not meet requirements, by the adoption of the device and method, in maintaining, it is unnecessary to power off the sulfur hexafluoride electrical equipment in leakage, pressure reduction or recycling of sulfur hexafluoride is not needed, maintaining is convenient and rapid, the device and method are suitable for electrical equipment made of metal, ceramic, cement and other various materials, on the premise that personal safety of the leakage blocking maintainer is ensured, shutdown maintaining time of an electrical system is shortened, and power-supply reliability of a power net is improved.

The invention discloses a coal dust conveying device leakage monitoring and early warning device and method. The leakage monitoring and early warning device comprises distributed temperature sensitive optical fibers which are wound and adhered on the external wall of a conveying steel pipe. The conveying steel pipe is externally wrapped by a heat insulation layer and a protective sleeve. The conveying steel pipe is divided into multiple continuous monitoring areas along the axis. The protective sleeve in each monitoring area is externally provided with a jacket. The two ends of the jacket stretch into the protective sleeve and the heat insulation layer and then are connected with the conveying steel pipe in an adhesive way. The jacket and the external wall of the conveying steel pipe form an enclosed pressure detection cavity. In the pressure detection cavity, an optical fiber grating vibration sensor is arranged on the external wall of the conveying steel pipe, and an optical pressure sensor is installed in the heat insulation layer. Leakage of the coal dust conveying device caused by holes or cracks at the early stage of leakage can be accurately judged and early warning can be performed, leakage of the coal dust conveying device caused by friction of the coal dust in conveying can also be accurately judged and the leakage points can be accurately captured and located and early warning can be performed so that safe production of enterprises can be ensured.

The invention includes a laterally double-diffused metal-oxide semiconductor (LDMOS) having a reduced size, a high breakdown voltage, and a low on-state resistance. This is achieved by providing a thick gate oxide on the drain side of the device, which reduces electric field crowding in the off-state to reduce the breakdown voltage and forms an accumulation layer in the drift region to reduce the device resistance in the on-state. A version of the device includes a low voltage version with a thin gate oxide on the source side of the device and a high voltage version of the device includes a thick gate oxide on the source side. The LDMOS may be configured in an LNDMOS having an N type source or an LPDMOS having a P type source. The source of the device is fully aligned under the oxide spacer adjacent the gate to provide a large SOA and to reduce the device leakage.

Leakage of an ink remaining in a gutter or the like is prevented. An inkjet recording device includes an ink tank for retaining an ink, a nozzle for discharging the ink as ink particles to print on a printing object, an ink supply unit for feeding the ink from the ink tank to the nozzle, a gutter for recovering the ink particles which are not used in printing in the ink tank among the ink particles discharged from the nozzle, an ink recovery line for returning the ink particles recovered in this gutter to the ink tank, and an ink recovery unit disposed on this ink recovery line for recovering the ink in the ink tank. The inkjet recording device has a gas-liquid separation unit for separating a gas returned along with the ink particles through the ink recovery line, a gas supply line for feeding the gas to the gutter, and an atmosphere relief line for releasing the gas from the gas-liquid separation unit to the outside.

The invention relates to semiconductor technology. The invention provides a vertical tunneling field effect transistor which can increases device on-state currents while not increasing device leakage currents. Technical scheme is summarized in that as for the vertical tunneling field effect transistor, a buffer layer is arranged above a semiconductor substrate; a source region, an intrinsic region and a leakage region are respectively arranged above the buffer layer; an epitaxial intrinsic region is arranged above the intrinsic region; one side of the epitaxial intrinsic region is in contact with the leakage region, and the opposite side of the epitaxial intrinsic region extends to be above one portion of the source region; a gate oxide layer is arranged above the portion where the source region overlaps with the epitaxial intrinsic region; a metal gate is arranged above the gate oxide layer; one side wall is arranged above the source region and the other side wall is arranged above the epitaxial intrinsic region and the leakage region; a stress film covers the source region, the leakage region, the metal gate and the two side walls. The beneficial effects of the vertical tunneling field effect transistor of the present invention are that; a buried oxide layer is provided with an opening below a drain electrode; the device on-state currents can be increased while the device leakage currents are not increased; and the invention is applicable to tunneling field effect transistors.

A process for fabricating an MOS device specifically a DRAM device, featuring passivation of defects in regions of a semiconductor substrate wherein defects left unpassivated can deleteriously influence data retention time, has been developed. A high density plasma dry etching procedure used to define the DRAM conductive gate electrode can create unwanted defects in a region near the surface of uncovered portions of the semiconductor substrate during the high density plasma procedure over etch cycle. Implantation of a group V element such as arsenic can be used to passivate the unwanted plasma etch defects, thus reducing the risk of defect related device leakage phenomena. However to insure the group V implanted species remain at or near the semiconductor surface for optimum defect passivation, the group V element implantation procedure is performed after all high temperature DRAM fabrication steps, such as selective oxidation for creation of oxide spacers on the sides of the conductive gate electrode, have been completed. A slow diffusing implanted arsenic ion is the optimum candidate for passivation while faster diffusing group V elements such as phosphorous are not as attractive for defect passivation.

Disclosed is a device which prevents leakage by automatically shutting off flow of incoming tap water using a plunger as a check valve when a compressed pulp body expands due to fluid leaking from a water purifier or under a sink. The water leakage prevention device according to one embodiment of the present invention is installed in the flow path of running tap water to a water purifier, and comprises: a running water inlet connected to the water supply source; a running water outlet connected to the water purifier; an upper casing unit having a channel connecting the running water inlet to the running water outlet; a lower casing unit attached to the bottom of the upper casing unit and having a compressed body which expands with absorption of water leaking from the water purifier via the lower casing unit; and a plunger check valve which alternatively opens and closes the running water channel and prevents discharge of water through the running water outlet by closing said channel when absorption of leakage expands said compressed body.

In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes.

Leakage of electromagnetic noise from a wiring substrate is suppressed. A wiring substrate (1) includes a multilayered wiring layer, a structure (8) of a conductor, and an electromagnetic wave absorber (5). An electronic component (2) which is an example of an electromagnetic noise generation source is mounted on the wiring substrate (1). The electronic component (2) has a high-frequency circuit. The structure (8) is formed using the multilayered wiring layer, and is arranged so as to enclose the electronic component (2) in plan view with an opening (4) in the enclosure. The electromagnetic wave absorber (5) is arranged so as to cover the opening (4).

The invention discloses a method for optimizing the horizontal arrangement distance of a hazardous chemical substance gas detector. According to the method, aiming at a target chemical engineering device, various factors including meteorological conditions, surrounding environments, device leakage risks, historical accident cases, medium types, process parameters and the like are comprehensively considered, FLACS software is used for simulating various leakage scenes, and the detector horizontal arrangement distance capable of coping with the various leakage scenes is obtained through analysis. The credibility of a set accident scene is improved, the influence of geographical area factors on hazardous chemical substance gas monitoring can be reflected more accurately, and the temperature,pressure and components of gas leaked from different accident positions of the same device can be analyzed. Besides, the method considers various accident scenes of the same set of device, and integrates analysis results, so that the arrangement position of the detector can cope with all possible accidents on the premise of ensuring timeliness.

The invention provides a novel rail potential limiting device using power electronics and microcomputer control technology, with the development of high-power power electronic devices, the main circuit adopts multiple thyristors, IGBT, series-parallel connection of diodes, the intelligent rail potential measuring and controlling device is used to control the thyristor and the IGBT to realize the intelligent input or output of the voltage limiting branch circuit, The rail potential limiting function of automatically limiting voltage and current when rail potential rises and automatically turning off when rail potential drops can not only ensure the safety of human body and equipment, but also greatly reduce the total stray current leakage through OVPD equipment, and effectively improve theprotection effect of stray current in metro.

The invention provides a high-voltage LDMOS (Laterally Diffused Metal Oxide Semiconductor) device structure with low radiation electric leakage. The device comprises three different section structures of AB, AC and AD. Compared with a traditional high-voltage LDMOS device structure, an AC section structure is additionally arranged between an AB section and an AD section. A second conduction type source region is deleted from the junction of a cellular region and a non-cellular region (field region) to one side of the cellular region, namely an AC section, and a first conduction type body region extends rightwards to be tangent to the second conduction type source region in an AD section, so a radiation leakage path is cut off, the device leakage phenomenon caused by total dose radiation is avoided, off-state loss of the device is reduced, and total dose radiation resistance of the device is improved.

The invention discloses an electric device leakage protection device based on equipotential detection. The electric device leakage protection device based on the equipotential detection comprises a sensor portion, a data acquisition processing circuit and an executing mechanism. The data acquisition processing circuit comprises a signal processing circuit and a processor circuit portion. The sensor portion is used for acquiring a leakage voltage signal of an electric device, and the signal processing circuit is used for receiving the leakage voltage signal and preprocessing the leakage voltage signal. The processor circuit portion is used for analyzing and calculating the preprocessed leakage voltage signal, comparing a calculation result with a set value and controlling the executing mechanism. The electric device leakage protection device is different from other protection devices based on a leakage current protection principle, is a leakage protection device designed based on an equipotential detection principle, can achieve data acquisition in a wide dynamic range, has good insulating performance and accordingly is suitable for leakage protection of electric devices in various occasions.

A process for fabricating an MOS device specifically a DRAM device, featuring passivation of defects in regions of a semiconductor substrate wherein defects left unpassivated can deleteriously influence data retention time, has been developed. A high density plasma dry etching procedure used to define the DRAM conductive gate electrode can create unwanted defects in a region near the surface of uncovered portions of the semiconductor substrate during the high density plasma procedure over etch cycle. Implantation of a group V element such as arsenic can be used to passivate the unwanted plasma etch defects, thus reducing the risk of defect related device leakage phenomena. However to insure the group V implanted species remain at or near the semiconductor surface for optimum defect passivation, the group V element implantation procedure is performed after all high temperature DRAM fabrication steps, such as selective oxidation for creation of oxide spacers on the sides of the conductive gate electrode, have been completed. A slow diffusing implanted arsenic ion is the optimum candidate for passivation while faster diffusing group V elements such as phosphorous are not as attractive for defect passivation.

Test structures for detecting defects arising from hybrid orientation technology (HOT) through detection of device leakage (gate leakage, junction leakage, and sub-threshold leakage), having at least one active region disposed in a re-grown region of a substrate: a layer of oxide; a layer of poly. Some test structures are dog-bone shaped test structure, tower shaped test structure, and inside-hole shaped. A method for detecting HOT defects involves measuring defect size and location in terms of device leakage, such as gate leakage, junction leakage, and sub-threshold leakage. HOT edge defect density and edge defect size distribution may be calculated, and the resulting defect information may be used to calibrate a defect yield model.

The invention discloses a semiconductor three-dimensional Hall sensor suitable for a high temperature work environment and a manufacturing method and belongs to the three-dimensional Hall sensor field. The sensor is characterized in that 5 main electrodes and 8 Hall sensing electrodes are arranged on a semiconductor material surface; the 5 main electrodes include 1 center current inflow electrodeB and 4 current outflow electrodes BX1, BX2, BZ1 and BZ2; the 8 Hall sensing electrodes are Z1 to Z4 and X1 to X4; and insulating layers where the 8 Hall sensing electrodes are embedded are separated.The sensor and the method have advantages that a device leakage current is greatly reduced, a measurement deviation of a device is decreased and device measurement sensitivity is increased; spatial three-dimensional magnetic field detection can be realized in a same semiconductor, and a Hall sensor chip in the scheme has advantages that packaging is simple, the size is small, an energy loss is small and cost is low; the sensor can normally work in an environment where a temperature is higher than 300 DEG C and in various extreme environments of a high temperature, a high voltage, high radiation and the like and can maintain a good linearity.

A memory device includes a core array that includes memory cells. The memory device also includes a headswitch coupled to the core array and a positive supply voltage. The headswitch reduces leakage current from the core array by disconnecting the core array from the positive supply voltage. Additionally, head switches are added for pre-charge devices to further reduce leakage current.

The invention discloses a method for detecting surface leakage channel of semiconductor detection device under illumination. The method judges the existence of surface leakage, that is, surface reflective layer, caused by illumination by measuring capactive differential signal on surface of device in different illumination intensities. By combining the measuring data, the size of the specific leakage channel of the measuring region is obtained through corresponding numerical value simulation. By using this method, the specific surface leakage characteristic of the device is directly and definitely obtained so as to provide parameters having direction for the suppression of the device leakage. The invention has significance on improving the device performance and optimizing the device design.

A high performance digitalized Programmable Gain Amplifier (PGA). In prior art circuit, a dual-ladder DAC is employed for gain control, the back gate leakage of NMOS resistors in the fine ladder conquers fine ladder nominal current and it produces non-monotonic gain scallop. Two new art design techniques: (1) adaptively control the fine ladder; and (2) use dummy PMOS brunch device leakage compensates for the NMOS resistor device leakage, are proposed so that the non-monotonic scallops are substantially eliminated and 13-bit resolution / accuracy PGA has been achieved.