17 results about "Device leakage" patented technology

The invention discloses an electronic device structure and a preparation method and application thereof. The preparation method of the electronic device structure comprises the following steps: providing a first semiconductor layer of a first conduction type, and forming at least one groove-shaped structure in a selected region of the first semiconductor layer; an electric field suppression layer is formed in the groove-shaped structure, the electric field suppression layer is distributed in a groove bottom corner area of the groove-shaped structure, a round transition structure for connecting the side wall and the groove bottom is formed, and / or the electric field suppression layer continuously covers the side wall, the groove bottom and the groove bottom corner area of the groove-shaped structure and serves as an epitaxial interface for epitaxial growth of a second semiconductor layer; and epitaxially growing a second semiconductor layer of a second conduction type in the groove-shaped structure. The electric field suppression layer is formed in the groove-shaped structure for performance reinforcement, electric field concentration is relieved, a peak electric field is reduced, and electric leakage of the device is reduced.

This application relates to the field of intelligent monitoring technology and discloses a sealed wearable animal device, including a circuit board, a base support, and a sealed shell. The electronic components on the circuit board include a battery and functional components; the base support includes a battery cavity, and the circuit board and electronic components are fixed to the base support; the sealed shell encloses the base support, and the sealed shell and base support together completely enclose the circuit board and electronic components; the base support is formed by a first injection molding process on the circuit board, and the sealed shell is formed by a second injection molding process using the same material on the combination of the base support, circuit board, and electronic components, with no gaps at the junction of the base support and the sealed shell. This application can solve the problem of device leakage failure and improve the sealing life.

The utility model discloses a semiconductor device, a power module, a power conversion circuit and a vehicle, the semiconductor device comprises a semiconductor body, the semiconductor body comprises a first surface and a second surface which are oppositely arranged, the semiconductor body also comprises a plurality of first areas and a plurality of second areas, the first areas and the second areas are arranged on the first surface, and the first areas and the second areas are arranged on the second surface; the second regions extend into the semiconductor body and are located between the adjacent first regions; the semiconductor structure layer is located on the first surface, and the orthographic projection of the semiconductor structure layer on the first surface at least covers the orthographic projection of the second area on the first surface; the semiconductor structure layer and the second region have the same conduction type; the first metal layer is located on one side, away from the first surface, of the semiconductor structure layer; and the second metal layer is located on the second surface, so that the forward on resistance of the device is reduced, the leakage current of the device is further reduced, and the performance and the stability of the semiconductor device are improved.

The invention relates to the technical field of hydrogen energy storage, in particular to a leakage blocking assembly and hydrogen energy storage equipment, according to the technical scheme, the leakage blocking assembly comprises a blocking mechanism, the blocking mechanism is provided with a blocking valve, a spiral pipe, a material storage barrel, an electric heating clamp and a lithium battery which can only be opened manually, the blocking valve is of a double-sealing structure, and a valve element is coated with a hydrogen blocking coating; a self-locking mistaken touch prevention structure is further arranged; the hydrogen energy storage equipment comprises a protection mechanism, a hydrogen storage mechanism, the leakage blocking assembly and a cooling mechanism, the protection mechanism comprises an anti-collision frame and the like, the hydrogen storage mechanism comprises a hydrogen storage tank and the like, the cooling mechanism comprises a liquid cooling pump body and the like, the base is provided with a groove matched with the hydrogen storage tank, an energy absorption buffer layer is arranged on the inner wall of the anti-collision frame, and the hydrogen storage tank is lined with a graphene or palladium alloy film. And the circulating pipe is a dual-channel redundant loop and is provided with a leakage monitoring component. The problems that an existing equipment leakage blocking assembly is insufficient in sealing, treatment after leakage is not timely, and potential safety hazards are likely to be caused by environmental factors are solved.

The application discloses a kind of six fluorine sulfur filled electrical equipment leakage management devices, including basic unit, sealing unit and clamping unit, wherein basic unit, including sealing body, connecting piece is connected to the one end of the sealing body.This six fluorine sulfur filled electrical equipment leakage management device, by sealing assembly is clamped between connecting piece and sealing body, by using manual wheel, let first clamping assembly clamp sealing shell and reduce gap, while, liquid guide assembly also carries out liquid guide, and the gap between sealing body and connecting piece is blocked by plugging glue, then, drainage is carried out using drainage device, to reduce the pressure of six fluorine sulfur gas on plugging glue, improve plugging success rate, after solidification, it can be covered with end, around leakage point using drainage device forms a closed space, reduces the pressure of leakage gas, improves the bonding quality of plugging glue, simultaneously, through drainage end, the sealing of closed space is realized, finally, through reinforcing glue, overall sealing is realized, to achieve the purpose of plugging.

The application discloses a 4H-SiC epitaxial structure for controlling TSD defects and a growth method thereof, and belongs to the technical field of semiconductors.The 4H-SiC epitaxial structure for controlling TSD defects comprises a 4H-SiC substrate and an epitaxial buffer layer I, a 4H-SiC buffer layer II and a 4H-SiC drift layer which are sequentially grown on the 4H-SiC substrate; and the epitaxial buffer layer I is a 6H-SiC buffer layer or a 4H-SiC buffer layer I.The 4H-SiC epitaxial structure for controlling TSD defects has the beneficial effects that the TSD defect and TSD derived defect densities can be effectively reduced, the device leakage current is reduced, the device reverse breakdown voltage is increased, and the quality of the epitaxial wafer is improved.

This invention discloses a noise-reducing, vibration-resistant, and cavitation-preventing regulating ball valve. The invention relates to the field of ball valve technology. A flange block near the composite component connects to a pipeline. Liquid flows from one side of the composite component to the other side of the valve body, forming a liquid flow path. During the process of fixing the flange block to the pipeline, the composite component enters the pipeline along with the pipeline, fitting against the inner wall of the connecting pipeline. When the liquid flows, it enters the valve body from the composite component. A drive motor controls the connecting shaft to rotate, which in turn drives the valve ball to rotate, causing the valve ball to rotate inside the valve body, thereby achieving the function of closing the liquid flow. During the rotation of the valve ball, it rubs against the friction component, cleaning the surface of the valve ball to reduce impurity accumulation, prevent gaps between the valve ball and the inner wall of the valve body, reduce the probability of equipment leakage, and thus extend the service life of the equipment.

The utility model relates to a leaky cable device and intrusion detection equipment. The leaky cable device comprises a transmitting cable and a receiving cable. And the length direction of the receiving cable is correspondingly coupled with the length direction of the transmitting cable. And the radial distance between the receiving cable and the transmitting cable is not greater than 0.5 m. The emission holes are distributed at intervals in the length direction. The first shielding layer is correspondingly provided with a transmitting hole between the two adjacent receiving holes along the length direction, and for a midpoint between the two adjacent receiving holes along the length direction, the length of the receiving cable between the midpoint and the transmitting hole is smaller than the length of the receiving cable between the transmitting hole and any one of the two adjacent receiving holes. Even if the radial distance between the receiving cable and the transmitting cable is small, the sufficient distance between the transmitting hole and the receiving hole can still be kept, the situation of close-range coupling of the first wire core and the second wire core is avoided, an electromagnetic field received by the second wire core is kept sensitive to an invasion target, and the detection accuracy is ensured.

The present application discloses a device leakage current test method. The method includes: applying a gradually increasing first gate voltage within a range to a gate of the MOS transistor; applying a first drain voltage to a drain of the MOS transistor; reapplying a gradually increasing second gate voltage within a range to the gate of the MOS transistor; reapplying a second drain voltage to the drain of the MOS transistor; reapplying a gradually increasing third drain voltage in a range to the drain of the MOS transistor; detecting a variation of the drain current as the first leakage current; and reapplying a gradually increasing fourth drain voltage to the drain of the MOS transistor, with a step of 0.04 V and a variation range; and detecting a variation of the drain current as the second leakage current.

The application relates to the technical field of semiconductors, and particularly discloses an ESD protection device with a folding trigger mechanism and a preparation method thereof. The method comprises a P-type substrate; an N-type well layer and a P-type well layer formed in the substrate; at least one P-type doped layer formed on the surface of the N-type well layer; at least one N-type doped layer formed on the surface of the P-type well layer; a third groove arranged between the N-type well layer and the P-type well layer; and a suspended electric field modulation structure arranged on the third groove. The application introduces the suspended electric field modulation structure, realizes dynamic electric field regulation of the SCR trigger process without increasing the device leakage and changing the main discharge path, and makes the device have low trigger voltage, moderate holding voltage, excellent large-current discharge capacity and good static reliability.

A semiconductor structure and a method of forming the same, the method comprising: providing a substrate including a substrate and a fin structure separated from the substrate, the fin structure including a bottom fin, a sacrificial layer on the bottom fin, and a top fin on the sacrificial layer; forming an isolation layer around the bottom fin on the substrate; forming a dummy gate structure across the top fin on the isolation layer; removing the sacrificial layer on both sides of the dummy gate structure to form a gap between the bottom fin and the top fin and the remaining sacrificial layer; forming a dielectric layer sealing the gap; after forming the dielectric layer, forming source / drain doped regions in the top fin on both sides of the dummy gate structure; removing the dummy gate structure to form a gate opening; removing the remaining sacrificial layer through the gate opening to form a via in communication with the gate opening; and filling the gate opening and the via with a gate structure surrounding the top fin. The present application reduces device leakage current and improves the control of the gate structure over the conductive channel.

This invention provides an epitaxial structure and a semiconductor device employing the epitaxial structure. The epitaxial structure includes, for example, a semiconductor substrate, a heteroepitaxial stack, and a high-resistivity buffer layer located between the semiconductor substrate and the heteroepitaxial stack. The heteroepitaxial stack is used to provide a conductive channel by constructing a two-dimensional electron gas and includes a gallium nitride channel layer and a barrier layer. The high-resistivity buffer layer includes a boron nitride layer, an aluminum nitride layer, and an aluminum boron nitride layer located between the boron nitride layer and the aluminum nitride layer. Embodiments of this invention reduce the possibility of breakage by optimizing the buffer layer material and layer structure to achieve high crystal quality and high resistance, thereby effectively reducing device leakage current and improving device breakdown voltage characteristics.

The application provides a MIM capacitor and a manufacturing method thereof, which comprises the following steps: providing a substrate; forming an adhesion layer on the substrate; forming a lower electrode on the adhesion layer; pre-treating the lower electrode by using an atomic layer deposition system; forming an STO layer on the pre-treated lower electrode in situ; performing a rapid thermal annealing treatment to crystallize the STO layer; and forming an upper electrode on the STO layer. By forming the adhesion layer between the substrate and the lower electrode, the device structure is stable and reliable. By pre-treating the lower electrode by inert ions before forming the STO layer, the organic matters existing in the interface of the lower electrode are effectively reduced, the formation of strontium carbonate is effectively reduced in the initial growth stage of the STO layer, the growth quality of the STO layer is improved, and the device leakage is improved, thereby solving the problem of how to reduce the leakage current of the MIM capacitor.

The invention discloses a process method for improving electric leakage of an SGT power device, and belongs to the technical field of semiconductor device manufacturing. According to the technical scheme, the method comprises the following steps: firstly, providing a substrate with a deep trench, and then forming a deep trench protection layer, HDP filling, HDP etching and other multi-step processes through a thermal oxidation process and CVD film forming in sequence, and forming a gate insulation oxide layer with a thicker bottom by utilizing the high selection ratio of etching, thereby effectively improving the voltage endurance capability of a bottom gate and preventing the device from being broken down. And subsequently completing related processes of the first gate and the second gate and formation of a body region and a source region. According to the process method, the electric leakage problem of the SGT power device can be remarkably solved, the performance of the device is improved, and the process method has important application value in the field of power device manufacturing.

The present disclosure provides a method of determining a leakage of a semiconductor manufacturing tool. The method includes: placing a substrate including a material layer on the substrate into a chamber of the semiconductor manufacturing tool; delivering a gas into the chamber to react with the material layer; obtaining a gas composition inside the chamber; and comparing the gas composition to a referential gas composition. The leakage is determined to exist if the gas composition is substantially different from the referential gas composition.