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1890 results about "Radiation resistance" patented technology

Radiation resistance is that part of an antenna's feedpoint resistance that is caused by the radiation of electromagnetic waves from the antenna, as opposed to loss resistance (also called ohmic resistance) which is caused by ordinary electrical resistance in the antenna, or energy lost to nearby objects, such as the earth, which dissipate RF energy as heat.

Single particle upset and single particle transient pulse resisiting D trigger

InactiveCN101499788ASingle event upsetCapable of single-event transient pulse performanceSingle output arrangementsElectronic switchingMultiway switchingRadiation resistance
The invention relates to a D trigger used for single particle upsetting resistance and single particle transient pulse in the technical filed of an integrated circuit, comprising two multichannel switches, two delay circuits, two protecting gate circuits and three inverters; wherein, the multichannel switches are used for forming a feedback loop for latching data; the delay circuits are used for generating signals in delay modes; the protecting gate circuits are used for filtering voltage transient fluctuation of the input signals; in the feedback loop of the D trigger, data input signal D and the delayed mode thereof enter the protecting gate circuit; and the output signals of the protecting gate circuit filter the delayed voltage transient fluctuation of the data input signal D and the width of the voltage transient fluctuation is not wider than the delay of the delay circuit. The invention can be applied to application occasions needing higher radiation resistance, leads the single particle upsetting resistance and single particle transient pulse performance of D trigger to reach the same level as a time sampling D trigger; and simultaneously, the increasing of the unit area is less than that of the time sampling D trigger and the working speed is superior to that of the time sampling D trigger.
Owner:SHANGHAI JIAO TONG UNIV

Graphene conductive coating material, preparation method therefor and application of graphene conductive coating material

The invention discloses a graphene conductive composite coating material. The graphene conductive composite coating material contains macromolecular film-forming resin, graphene and a graphene dispersant; and the graphene dispersant contains an aniline oligomer or a derivative thereof or soluble polyaniline which can be combined with the graphene through PI-PI interaction so as to enable the graphene to be uniformly and stably dispersed in the macromolecular film-forming resin or a mixture of the macromolecular film-forming resin and water and/or an organic solvent. The invention also discloses a preparation method for the coating material. According to the coating material disclosed by the invention, the graphene can be uniformly and stably dispersed in a coating material matrix, so that the application of the coating material in the aspects of conductive macromolecular coatings and the like can be greatly promoted; the preparation process is simple, does not need complex chemical reactions and is easy to control, and the coatings made from the coating material have good bonding capability on surfaces of macromolecular materials, metallic materials, textile materials and ceramic materials; and meanwhile, the coating material also has the characteristics of radiation resistance, electrostatic resistance, corrosion prevention, wave absorbing, wear resistance and the like, thereby being broad in application prospect.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI

Single-component high-refractivity LED (light-emitting diode) packaging adhesive and preparation method thereof

The invention provides a single-component high-refractivity LED (light-emitting diode) packaging adhesive which is prepared from the following raw materials in parts by weight: 50-80 parts of vinyl of phenyl polysiloxane, 25-40 parts of crosslinking agent, 0.1-0.5 part of platinum catalyst, 0.01-0.1 part of inhibitor and 0-5 parts of auxiliary material. The single-component high-refractivity LED packaging adhesive has the advantages of high refractivity, high light transmittance, radiation resistance, high/low temperature resistance, weather resistance and the like; the viscosity of the single-component high-refractivity LED packaging adhesive is 1000-7000 mPa.s, the storage period at normal temperature is 60 days, the storage period at 0-4 DEG C is 6 months, and the hardness after curing is 80A-70D; and the single-component high-refractivity LED packaging adhesive is suitable for packaging protection for high-power high-lighting-effect LEDs. The invention also provides a preparation method of the single-component high-refractivity LED packaging adhesive. The preparation method has the advantages of accessible raw materials, no pollution and mild conditions, and is simple to operate, easy to control and convenient for industrialization.
Owner:NICHE TECH KAISER SHANTOU

Nutritional health food with function of improving gastrointestinal function and preparation method thereof

The invention discloses a nutritional health food with the function of improving gastrointestinal function and a preparation method thereof. The nutritional health food can be used for regulating the intestinal flora to improve the gastrointestinal function from the aspects of increasing the probiotics type and quantity, increasing the probiotics nutrient substance, inhibiting the growth of harmful bacteria and enhancing the immunity of human body. According to the preparation method, probiotics powder such as lactobacillus plantarum is used as the main raw material, and edible fungi extracts and modified dietary fibers are scientifically compounded; saussurea involucrata culture extracts which are capable of remarkably enhancing the immunity of human body, resisting inflammatory and easing pain, and have the functions of oxidation resistance, radiation resistance and fatigue resistance are used, so that while the intestinal probiotics flora types is increased, the fix planting capacity of the endogenous probiotics and exogenous probiotics in the intestinal tracts of human body is remarkably enhanced, and fix planting time of the endogenous probiotics and exogenous probiotics in the intestinal tracts of human body is prolonged remarkably, the growth and reproduction of the harmful bacteria, particularly the Gram negative bacteria, in the intestinal tracts are effectively inhibited, the forming of the probiotic floras in the intestinal tracts is fully regulated and the nutritional health food which is good in probiotic property, capable of remarkably enhancing the immunity of human body and has the effect of improving the gastrointestinal function is prepared.
Owner:北京东方兴企食品工业技术有限公司

Super hydrophobic silicon-fluorine polymer/nanometer silica hybridization nanometer material and preparation method thereof

The invention relates to a super hydrophobic silicon-fluorine polymer/nanometer silica hybridization nanometer material and a preparation method thereof, relating to a super hydrophobic nanometer material and a preparation method thereof. The invention provides the super hydrophobic silicon-fluorine polymer/nanometer silica hybridization nanometer material with mild reaction condition, definite reaction product structure as well as simple and convenient operation and the preparation method thereof. The preparation method comprises the following steps of: firstly, preparing nanometer silica modified by a silane coupling agent; secondly, preparing a nanometer silica atom transfer radical surface initiator; thirdly, preparing a SiO2-poly-Methacryloxypropyltrimethoxysilane macromolecule initiator; and finally preparing the silicon-fluorine polymer/nanometer silica hybridization nanometer material. The silicon-fluorine polymer/nanometer silica hybridization nanometer material has excellent high temperature resistance, ultraviolet resistance, infrared radiation resistance, oxidative degradation resistance, chemicals resistance and contamination resistance. Polymethyl 2-propenoic acid, 2,2,3,3,4,4,4-heptafluorobutyl ester has very low surface energy and very good hydrophobicity, wherein the surface energy can be as low as 0.5-1.5mN/m, and the hydrophobic angle can be over 150 degrees.
Owner:XIAMEN UNIV

Photovoltaic cable and manufacturing method and application thereof

The invention discloses a photovoltaic cable and a manufacturing method and application thereof. The photovoltaic cable comprises an insulating layer and a jacket layer; the insulating layer comprises the following components: EVA (ethylene-vinyl acetate copolymer), LLDPE (linear low density polyethylene), EMA (ethylene-methyl acrylate), EVA-g-MAH (ethylene-vinyl acetate copolymer grafted maleic anhydride), magnesium hydrate, organic montmorillonoid, a cross-linked sensitizing agent, a lubricating agent, an antioxidant, a light stabilizer and a copper resisting agent; and the jacket comprisesthe following components: EVA, LLDPE, EMA, EVA-g-MAH, color masterbatch, magnesium hydrate, a phosphor series fire retardant, melamine chlorinated isocyanurates, zinc borate, a cross-linked sensitizing agent, a lubricating agent, an antioxidant, a light stabilizer and a copper resisting agent. According to the invention, the photovoltaic cable is manufactured by extruding insulating layer aggregates and jacket layer aggregates on a cable double-layer co-extrusion machine, wrapping the aggregates on the outer surface of a conductor in sequence and carrying out forming, air cooling, coiling andirradiation. The manufacturing method disclosed by the invention has the advantages of good machining property, favorable machining property and low cost and is suitable for industrial production; and the manufactured photovoltaic cable is environment-friendly and has excellent mechanical property, flame radiation resistance performance, thermal ageing property and weather fastness.
Owner:GUANGZHOU KAIHENG SPECIAL WIRE & CABLE

AlGaN/GaN insulated gate high electron mobility transistor (HEMT) and manufacturing method thereof

The invention discloses an AlGaN/GaN insulated gate high electron mobility transistor (HEMT) device and a manufacturing method thereof, relating to the field of microelectronic technique and mainly solving the problems of low frequency and poor radiation resistance of the device. The device comprises a GaN buffer layer, an intrinsic GaN layer, an AlO.3GaO.7N layer, a GaN coating layer, a gate oxide layer, a gate electrode, a source electrode and a drain electrode, wherein Al2O3 is used as the gate oxide layer, and transparent ZnO is used as the gate electrode. The Al element is doped in the ZnO gate electrode, and the length of the ZnO gate electrode is equal to the distance between the source electrode and the drain electrode. The manufacturing method of the device sequentially comprises the steps of: firstly, carrying out epitaxial material growth, then manufacturing the Al2O3 gate oxide layer and the ZnO gate electrode, and finally, manufacturing the source electrode and the drain electrode at two sides of the ZnO gate electrode by using a self-aligned method. The device has the advantages of good frequency characteristics, good radiation resistance, simple processes, good repeatability and high reliability, thereby being used as an electronic component in a high frequency circuit or a high speed circuit.
Owner:XIAN CETC XIDIAN UNIV RADAR TECH COLLABORATIVE INNOVATION INST CO LTD
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