513 results about "Radiation resistance" patented technology

The invention relates to the technical field of SRAM (Static Random Access Memory) memory anti-radiation testing, and discloses an SRAM memory anti-radiation testing method and system based on running state injection, and the method comprises the following steps: system initialization, mapping preparation and time sequence baseline establishment; carrying out model quantitative compiling, sensitivity analysis and physical bit candidate generation; generating a running state injection plan and loading a test case; performing operation state execution, disturbance injection and synchronous monitoring acquisition; multi-source triggering, weight read-back and fault decoupling judgment are carried out; and performing quantitative evaluation on anti-radiation performance, constructing a degradation curve and outputting a report. The system corresponds to the method. According to the invention, a hardware-in-the-loop operation state injection and online evaluation technology is constructed, and the technical problems of guidance and position limited disturbance / equivalent irradiation injection based on weight bit level sensitivity and logic-physical mapping are solved.

The invention relates to a full-automatic test system and method compatible with multi-type component irradiation tests, and the system comprises an irradiation main control board, an irradiation test board and an irradiation load board which are disposed in an irradiation room and are connected through a cable, and an electronic load, a programmable power supply, an upper computer and a digital oscilloscope which are disposed in a test preparation room. The system can compatibly support the irradiation test of the total dose effect and the single event effect, is suitable for the rapid assessment demand of multiple types of COTS components on a large scale, and can meet the urgent demand of the commercial spaceflight field for the evaluation of the radiation resistance of the COTS components.

The invention discloses a cellular structure of a shield gate trench MOSFET and a manufacturing method thereof, the cellular structure of the shield gate trench MOSFET comprises a substrate, a drift region and an interlayer dielectric layer, the drift region is provided with a deep trench, and the deep trench is internally provided with a shield gate, an intermediate oxide layer and a control gate; a body region and a source region are formed at the upper part of the drift region through injection, the interlayer dielectric is provided with a source electrode contact hole which penetrates through the source region and extends into the body region, and highly doped contact regions are formed on the side wall and the bottom of the source electrode contact hole through injection; and a charge balance region is formed below the source electrode contact hole through high-energy ion implantation. According to the invention, by arranging the charge balance region, the lateral depletion of the shield gate to the adjacent drift region can be enhanced when the shield gate trench MOSFET device is in a reverse bias state, the specific on-resistance of the device is reduced, the depletion of the drift region of the epitaxial layer is accelerated, and the reliability and radiation resistance of the device are improved.

The invention discloses an anti-radiation aluminum-based layered composite board and an explosive welding method thereof, and belongs to the technical field of metal material welding. According to the method, aluminum or aluminum alloy serves as a base plate, tantalum or tantalum alloy serves as a compound plate, a titanium / titanium alloy middle transition layer is introduced, direct impact of explosive detonation on the compound plate is avoided through an aluminum protection plate, a powdery emulsion explosive is combined with an inert diluent to regulate and control energy parameters, and gaps between plates are accurately set based on the explosive welding window theory; and one-time forming metallurgical bonding of multiple layers of heterogeneous materials is achieved. The density of the obtained composite board is reduced by 40% compared with that of a traditional lead protection layer, and the composite board has the characteristics of radiation resistance, light weight, high strength and corrosion resistance and is suitable for manufacturing of spacecraft radiation protection layers and other deep space equipment.

The invention discloses a diamond piezoresistive material and pressure sensing application thereof, and particularly relates to a boron-doped diamond-based piezoresistive material and an application method thereof in a sensor, a gradient doping structure and heterogeneous layer design are adopted, and the diamond piezoresistive material with high sensitivity, high linearity, temperature stability, corrosion resistance and radiation resistance is constructed; by optimizing a CVD process and a pattern etching structure, stable piezoresistive response in an environment of-60 DEG C to 250 DEG C is realized, the cycle life exceeds 10 times, and the high-reliability piezoresistive sensor is suitable for high-reliability sensing devices under extreme working conditions such as aerospace engines, deep sea detection equipment and nuclear reactors.

A glass material with low refractive index and radiation resistance, method for preparing the same, and applications thereof. The glass material consists of the following components by mole percent: 60-80% SiO2, 2-10% B2O3, 0.1-1% CeO2, 5-10% Na2O, 2-10% K2O, 1-8% Al2O3, 0-2% CaF2, 0-1% As2O3, and 1-5% alkaline earth metal oxides, wherein the alkaline earth metal oxides are selected from at least one of BaO, SrO, CaO, and MgO. The glass material has a refractive index of ≤1.47, a glass transition temperature of ≤550° C., a yield point temperature of 645° C., a softening point temperature of ≤748° C., and a coefficient of thermal expansion of (82-87)×10−7 / ° C. After exposure to a 4700 Gy dose of X-ray radiation, the transmittance decreases by ≤2%. The glass material can be used as cladding glass material for the preparation of optical glass fibers and fiber panels, capable of meeting the requirements for radiation environment applications.

The invention discloses a preparation method of a high-temperature-resistant, high-strength, high-electric-conductivity and high-heat-conductivity copper-niobium heterogeneous nano composite fine filament, which comprises the following steps of: 1, winding a copper strip and a niobium strip, placing the wound copper strip and niobium strip in a copper sheath, carrying out homogeneous heating and isothermal hot extrusion deformation, and then carrying out multi-pass straight drawing, intermediate annealing and disc drawing to obtain a copper-niobium composite wire; 2, bundling and assembling the copper-niobium composite wires, placing the copper-niobium composite wires in a copper sheath, carrying out homogeneous heating and isothermal hot extrusion deformation, and then carrying out multi-pass straight drawing, intermediate annealing and disc drawing to obtain a copper-niobium multi-core composite round wire; and 3, performing multi-pass drawing and vacuum annealing on the copper-niobium multi-core composite round wire in sequence. The ultra-plastic deformation process combining copper and niobium winding combination with cluster drawing is adopted, the fine wire with high tensile strength, good bending and tensile plasticity, excellent high-temperature thermal stability and high-temperature stress relaxation resistance, excellent radiation resistance and excellent strong current matching is obtained, the process is simple, control is easy, and the method is suitable for industrial production. The industrial batch production is easy to realize.

The invention discloses a photoelectric composite aluminum alloy conductor aerospace cable and a preparation method, and belongs to the technical field of photoelectric composite cables, the cable comprises an optical fiber unit, a conductor unit, an insulating layer, an anti-electromagnetic unit and a sheath layer; the anti-electromagnetic unit is obtained by weaving double-layer metallized polyimide fibers; the double-layer metallized polyimide fiber sequentially comprises a polyimide fiber, a first metal coating and a second metal coating from inside to outside. The surface of the polyimide fiber is coated with modified polydopamine; the first metal coating is copper; and the second metal coating is silver and / or nickel. The double-layer metal coating can form a more compact metal outer layer on the surface of the polyimide fiber, the requirements of the severe external environment of aerospace are met, a conductive network with higher stability is formed, and the electromagnetic shielding effect is remarkably improved. Moreover, the polyimide fiber is coated with a polydopamine coating, so that the fiber is not damaged, and the overall high and low temperature resistance and radiation resistance can be improved.

The invention relates to a radiation hardening band-gap reference current source circuit, and belongs to the technical field of radiation resistance of integrated circuits. Over-degradation of the threshold in a high total dose environment is focused on a circuit design level, closed-loop adjustment of the threshold voltage is realized through total dose detection and a dynamic compensation mechanism, and reliability and stability of the circuit in the high dose radiation environment are remarkably improved. Through the embedded logic of the reinforced circuit, the anti-radiation performance of the reinforced circuit is ensured, and the reinforced circuit can work normally in a high-dose environment. Reliable triggering and system self-recovery in a full dose range can be realized through a bias closed-loop design provided by a reference circuit for a reinforced loop, and the application requirements of extreme environments such as spaceflight and nuclear energy are met. The method has the advantages of anti-radiation effect, good dynamic nature, strong transportability and the like.

The invention relates to a multi-threshold 16T anti-radiation SRAM (Static Random Access Memory) storage unit circuit and a memory, a storage module in the circuit is of a bistable structure formed by two cross-coupled phase inverters formed by PMOS (P-channel Metal Oxide Semiconductor) transistors, and two storage nodes are formed; the redundant storage module adopts NMOS (N-channel metal oxide semiconductor) transistors to form a bistable structure, and two redundant nodes are formed to serve as redundant backups of the storage module; when the read-write operation control module reads or writes data, a word line is activated, and the data is read from the storage node and the redundant node or written into the storage node and the redundant node through the switched-on transistor; and the bit line driving module is used for driving the bit lines during reading and writing operations. According to the circuit, by introducing redundant nodes and a feedback mechanism, efficient resistance and recovery of single-particle and multi-node upset are achieved, the anti-radiation capacity is improved, the static noise margin, the read-write speed and the power consumption performance are optimized, and the circuit is suitable for the reliable data storage requirement in the high-radiation environment.

The invention relates to the technical field of image processing, and discloses a plastic package material defect detection method and system in a radiation environment based on machine vision. The method comprises the following steps: acquiring an anti-radiation image in a gamma-ray environment through a lead-tungsten alloy shielding high-radiation tolerance type image sensor, and performing adaptive contrast enhancement. Defect features including microcracks, bubbles, deformation and chromatic aberration are extracted by using dual-tree complex wavelet transform and an HSV color space; and inputting the multi-dimensional features into an AR-DCNN network to carry out multi-task learning, identifying defect types and carrying out scoring. Based on Weibull distribution and a random forest algorithm, the radiation-resistant life of the plastic package material is predicted, and a material degradation curve and safety threshold early warning are obtained. According to the invention, standardized processing of the radiation damage quantitative index is realized, and the prediction accuracy is effectively improved.

The invention discloses a low-power-consumption radiation-resistant quadrature voltage-controlled oscillator based on an SOI (Silicon On Insulator) process, relates to the technical field of quadrature voltage-controlled oscillators, and is used for solving the technical problems that an existing quadrature voltage-controlled oscillator is low in radiation resistance in a harsh radiation environment and does not have the characteristic of low power consumption. The invention discloses a low-power-consumption anti-radiation quadrature voltage-controlled oscillator based on an SOI process. The low-power-consumption anti-radiation quadrature voltage-controlled oscillator comprises a first voltage-controlled oscillator, a second voltage-controlled oscillator, a first tail filter and a second tail filter, the first voltage-controlled oscillator and the second voltage-controlled oscillator respectively form an LC resonant cavity with a parasitic capacitor of an inductor and a varactor through the inductor; the first tail filter is connected with the first voltage-controlled oscillator, and the second tail filter is connected with the second voltage-controlled oscillator; two inductors of the first tail filter and the second tail filter are coupled; lC resonant cavities of the first voltage-controlled oscillator and the second voltage-controlled oscillator output oscillation waveforms, and negative impedance is formed through configured transistor pairs, so that the waveforms are output constantly.

The invention relates to the technical field of chip design, in particular to a test method and system for a chip simulation model. The method comprises the following steps: acquiring chip data, and performing chip circuit logic analysis to obtain circuit logic data; performing signal transmission simulation based on the circuit logic data to obtain signal transmission data; constructing a chip simulation model according to the circuit logic data and the signal transmission data; performing particle bombardment on the chip simulation model to obtain particle data; performing energy spectrum classification based on the particle data to obtain proton data and heavy ion data; performing single event upset fault analysis on the chip simulation model according to the proton data to obtain single event upset data; and performing multi-particle upset fault analysis on the chip simulation model according to the heavy ion data to obtain multi-particle upset fault data. The reliability of the chip in the radiation environment is evaluated and optimized based on the chip design technology, so that the radiation resistance of the chip is improved.

The invention relates to an optical fiber coupling type focusable laser cutting device. According to the device, a laser transmitter transmits laser through an input optical fiber; the laser receiving module comprises a mounting seat, an optical fiber base, a transmission mechanism and a focusing mechanism, the focusing mechanism drives the optical fiber base to move in the axial direction through the transmission mechanism, and motor-free focusing in the nuclear radiation environment is achieved; the laser conduction module comprises a parabolic reflector for collimating and focusing the laser; according to the laser cutting device, the focusing technology depending on a motor in the prior art is converted into full-mechanical transmission focusing design, the failure risk of electronic elements such as the motor in the radiation environment is avoided, and through cooperation of the focusing mechanism, the transmission mechanism and the limiting pin, the laser cutting efficiency is improved. The high-precision and high-reliability focusing function is achieved, and the laser cutting device which is good in radiation resistance, high in long-term operation stability and long in service life is achieved in the nuclear radiation environment.

The invention discloses a radiation-resistant protective cable for a nuclear power station and a preparation method thereof, and belongs to the technical field of cables, the radiation-resistant protective cable for the nuclear power station comprises a cable body and a sheath layer, and the sheath layer comprises the following components in parts by mass: 100 parts of polypropylene resin, 20-40 parts of ethylene propylene diene monomer and 5-12 parts of modified multi-walled carbon nanotubes. 8-15 parts of a heat conduction enhancer, 2-6 parts of an antioxidant, 1-3 parts of a heat stabilizer and 4-8 parts of a plasticizer; the heat conduction reinforcing agent is prepared by carrying out surface modification on composite powder of aluminum nitride and boron nitride through a silane coupling agent. Through the synergistic effect of the modified multi-walled carbon nanotubes and the surface modified heat-conducting enhancer, the heat-conducting property, radiation resistance and heat stability of the cable are remarkably improved on the premise of keeping excellent electrical insulation property.

The invention relates to a high-temperature-resistant and radiation-resistant armored coaxial radio frequency cable, which comprises a copper core, a first stainless steel tube, a silicon dioxide micro powder layer, a second stainless steel tube, a copper tube and an outer shielding protection tube which are sequentially arranged from inside to outside, the silicon dioxide micro powder layer is filled in a gap between the first stainless steel tube and the second stainless steel tube, the copper tube wraps the second stainless steel tube, and the outer shielding protection tube wraps the copper tube. The armored coaxial radio frequency cable is small in outer diameter, has good radiation resistance, high temperature resistance and high signal transmission stability, and can meet the insulation requirements of high-temperature scenes such as nuclear power and the like.

The invention provides a rare earth silicon germanate scintillating material and a preparation method and application thereof, in particular to a rare earth silicon germanate scintillating material with high thermal stability and strong radiation resistance and a preparation method and application thereof, the general formula of the rare earth silicon germanate scintillating material with high thermal stability and strong radiation resistance is RE2 (1-x-delta / 2) Ce2xGedeltaSi (1-y + delta) Gey-deltaOz, in the formula, 0 lt; x is more than or equal to 0.05, y is more than or equal to 0.15 and less than or equal to 0.5, delta is more than or equal to 0 and less than or equal to 10 <-4 >, z is more than or equal to 4.95 and less than or equal to 5.05, RE represents a rare earth element, and the rare earth element is selected from at least one of lanthanum (La), lutetium (Lu), yttrium (Y) and gadolinium (Gd). The rare earth silicon germanate scintillating material provided by the invention has the characteristics of strong radiation damage resistance, high scintillation light output, low afterglow and the like while greatly improving the thermal stability, and can be used in occasions with extremely high requirements on the thermal stability or radiation resistance of the material, such as high-energy physical experiments, nuclear medicine imaging, oil exploration wells and the like.

The invention relates to the technical field of particle deposition and semiconductor anti-radiation analysis, and discloses an alpha particle energy deposition calculation method based on a Monte Carlo particle transport simulation tool, which sequentially comprises the steps of material and particle source setting, energy deposition score indicator use, single particle event statistics, soft error rate calculation and output and data analysis. By adopting the method and the device, the requirements of field experiments are greatly reduced, and the time and the cost required by the experiments are saved. Moreover, through the simulation method, designers can more efficiently calculate the energy deposition of the alpha particles in the semiconductor device and obtain the soft error rate of the alpha particles, and radiation hardening design of the semiconductor device can be carried out according to the data, so that the radiation resistance and reliability of the device are improved.

The invention belongs to the technical field of narrow-band optical radiation imaging, and particularly relates to a narrow-band EUV and BEUV radiation imaging device based on a nano polycrystalline hexagonal boron nitride scintillator. The imaging device is composed of a nano polycrystalline hexagonal boron nitride scintillator plated with Zr, Mo or Nb metal, a high-precision camera, a vacuum interface flange and a shielding shell, and narrow-band selective imaging can be achieved in the wave band of 6-14 nm. The radiation imaging device has high sensitivity, narrow-band selectivity and excellent radiation resistance to 13.5 nm EUV light and 6.7 nm BEUV light, and compared with a traditional YAG-based imaging device, the radiation imaging device has remarkable advantages. The invention provides an innovative solution for high-performance EUV and BEUV radiation imaging, and has important application value in the field of EUV and BEUV beam diagnosis.

The invention relates to the technical field of photovoltaic adhesive films, and discloses an anti-radiation photovoltaic packaging adhesive film, a preparation method thereof and a photovoltaic module. The adhesive film is of a multi-layer co-extrusion composite structure formed by co-extrusion molding and irradiation, and comprises an upper surface layer, a middle functional layer and a lower surface layer, the upper surface layer is a radiation-resistant polymer matrix (such as EVA-g-St, EVA-g-(alpha-MeSt), POE-g-St and an EVA / POE-aromatic resin blend); the middle functional layer comprises a packaging resin matrix, an anti-radiation agent (which is a nano-scale radiation protection material such as a rare earth oxide, a heavy metal oxide, a boron-containing compound and a polymer derivative of a benzotriazole type ultraviolet absorbent) and a stabilizer; and the lower surface layer is a bonding surface layer formed by light-transmitting bonding resin. The adhesive film is good in radiation resistance, the light transmittance, the cohesiveness, the elongation at break retention rate, the yellowing resistance, the power attenuation resistance of a component and the like after accelerated radiation are obviously improved, and the service life of the component under strong radiation can be prolonged.

Disclosed in the present invention is a radiation-insensitive single-mode optical fiber, comprising a core, a first cladding, and a second cladding which are sequentially arranged from inside to outside, or comprising a core, a first buffer layer, a first cladding, a second buffer layer, and a second cladding which are sequentially arranged from inside to outside. The core, the first buffer layer, the first cladding, the second buffer layer, and the second cladding are all made of quartz glass doped with a cerium element, an aluminum element, and a fluorine element. The contents of the cerium element, the aluminum element, and the fluorine element are constant in the radial directions of the core, the first cladding, and the second cladding, respectively, and linearly vary in the first buffer layer and the second buffer layer, respectively. In the present invention, by regulating and controlling the contents of the cerium element, the aluminum element, and the fluorine element in the core, the first cladding, and the second cladding of the optical fiber, the stress distribution of the optical fiber is optimized, the residual stress is reduced, and the generation of fatigue bonds and wire drawing defects in the optical fiber is reduced, thereby improving the radiation resistance of the optical fiber.

The invention relates to the technical field of cooling of particle accelerators and nuclear power equipment, and discloses a cooling device suitable for high-power rays, which comprises an absorber assembly, a cooling water system assembly, a vacuum tube assembly, a shield assembly and a support assembly. The absorber assembly is formed by welding internal graphite and external copper through a brazing process, and air holes penetrating to a graphite layer are formed in the copper and communicated with an air cavity in the graphite to form a vacuum sealing cavity. The cooling water system assembly comprises a water segregator with two layers of water inlet ring cavities and two layers of water outlet ring cavities, and uniform flow distribution is ensured. And the absorber cooling water pipe is embedded into the copper and is connected with the U-shaped pipe to form a cooling loop. The electron beam bombards the graphite to generate heat, and the heat is transferred to the copper and taken away by cooling water in the cooling water pipe embedded in the copper. The shield assembly is arranged around the vacuum tube assembly to prevent radiation leakage. The cooling device realizes effective heat dissipation of 8GeV high-power rays, and has excellent radiation resistance and extremely long fatigue life.

The invention relates to the technical field of alloy materials, and provides a low-activation high-strength anti-radiation high-entropy alloy and a preparation method thereof. The components of the alloy are (Fe < 3 > < 0.4 > Cr < 3 > V < 3 > < 0.3 > Ti < 3.0 > Ta < 3.0 > W < 3.0 >) < 100-x > C < x >, and x is larger than or equal to 0.5 and smaller than or equal to 7. The yield strength of the high-entropy alloy at the room temperature is larger than 1300 MPa, the plastic deformation amount is 15% or above, the room-temperature brittleness is greatly relieved, and compared with an existing low-activation high-entropy alloy, the low-activation high-entropy alloy has the advantages of being high in strength and toughness, low in cost and the like. In addition, after high-energy low-flux He plasma irradiation, the anti-irradiation performance of the alloy is improved, and the mechanical performance and the irradiation performance of the material can be regulated and controlled through alloy components. The low-activation high-entropy alloy serves as a nuclear material of a fusion reactor and a new-generation fission reactor, the problems that an existing traditional low-activation nuclear material is high in cost, insufficient in mechanical property and the like are solved, and application and development of nuclear energy in the fields of aviation and national defense can be further promoted.

The invention discloses a preparation method of a high-toughness low-conductivity anti-radiation thermal barrier coating. The invention belongs to the technical field of thermal barrier coating materials. Aiming at the problems of thermal expansion mismatch of a precious metal second phase, failure of a multilayer structure interface and insufficient toughness of a glass ceramic-based coating in an existing coating, the invention provides a composite gradient structure design. By introducing the glass ceramic intermediate layer and the gradient functional surface layer and combining plasma spraying and high-temperature sintering processes, the characteristics of high toughness, low heat conductivity, radiation resistance and high-temperature self-healing of the coating are realized. The method comprises the following specific steps: step 1, substrate pretreatment; step 2, bonding layer preparation; step 3, glass ceramic intermediate layer deposition; step 4, functional surface layer gradient spraying; the thermal conductivity of the obtained coating is lower than 0.8 W / (m.K), the bonding strength is larger than 35 MPa, the fracture toughness reaches 4.0 MPa.m < 1 / 2 >, the infrared reflectivity at the waveband of 0.3-10 microns is larger than 0.85, and microcrack self-healing can be achieved at the temperature of 1200 DEG C. The method is suitable for ultra-high-temperature service environments such as aero-engine turbine blades.

To provide a reference voltage circuit capable of reducing variations in reference voltage due to process variation, temperature variation, and power supply voltage variation, and having enhanced radiation resistance.SOLUTION: A reference voltage generation unit 2 includes: a transistor M1 constituted by a depletion-type field-effect transistor in which a gate electrode containing an n-type impurity is formed; and a transistor M2 constituted by an enhancement-type field-effect transistor in which a gate electrode containing a p-type impurity is formed. Aspect ratios of the transistors M1 and M2 are equal. A temperature characteristic correction unit 3 includes: resistors R1 and R2 connected in series to a source of the transistor M2; and transistors M11 and M12 having different aspect ratios. A difference between the gate-source voltages of the transistors M11 and M12 is applied to both ends of the resistor R1.SELECTED DRAWING: Figure 1

The invention discloses a titanium-based high-entropy amorphous / tungsten multilayer film with radiation resistance and low hydrogen retention potential and a preparation method and application thereof, and belongs to the technical field of nuclear energy materials. The titanium-based high-entropy amorphous / tungsten multilayer film sequentially comprises a first TiVZrNbTaMoB alloy layer, a W layer and a second TiVZrNbTaMoB alloy layer from bottom to top, and the atomic percent of TiVZrNbTaMoB alloy in the first TiVZrNbTaMoB alloy layer and the atomic percent of TiVZrNbTaMoB alloy in the second TiVZrNbTaMoB alloy layer are as follows: 45%-50% of Ti, 20%-30% of V, 8%-15% of Zr, 10%-20% of Nb, 0.5%-3% of Ta, 0.3%-1% of Mo and 0.1%-0.3% of B. The preparation process mainly adopts a magnetron sputtering method. The obtained multilayer film has the potential of radiation resistance and low hydrogen retention.

The invention discloses a high-stability radiation-resistant LED lamp constant-current source driving circuit, which comprises a surge protection circuit, an over-temperature and over-current protection circuit, a voltage transformation and rectification circuit and a constant-current source voltage regulation circuit, and is characterized in that the surge protection circuit adopts a gas discharge diode and a piezoresistor which are packaged by ceramics to improve the radiation resistance of the circuit; the surge protection circuit is connected with the transformation rectification circuit and is used for suppressing high-voltage pulses and shunting high voltage to realize overvoltage protection; the voltage transformation and rectification circuit and the over-temperature and over-current protection circuit are connected with the constant current source voltage regulation circuit, the voltage transformation and rectification circuit is used for transforming voltage and converting the voltage into direct current, and the over-temperature and over-current protection circuit cuts off a power supply when detecting abnormal high temperature or overlarge current to prevent the circuit from being damaged due to overheating or over-current; and the constant current source voltage regulating circuit is used for providing stable current output to drive the LED lamp. The LED lamp constant current source driving circuit has over-current, over-voltage and over-temperature protection functions while improving the irradiation resistance of the LED lamp constant current source driving circuit.

The embodiment of the invention provides a magnetic isolation feedback circuit which comprises an error amplifier unit, a modulator unit and a demodulator unit. The magnetic isolation feedback circuit is used for transmitting an error signal of an output voltage sampling signal Vos of a secondary side of the LLC resonant triode converter to a primary side of the LLC resonant converter so as to control the duty ratio of a first primary side switching tube QH and a second primary side switching tube QL of the LLC resonant converter; the error amplifier unit is used for amplifying an error signal of the output voltage sampling signal Vos to generate an amplified error signal; the modulator unit is used for modulating the input amplified error signals into square wave signals with the same amplitude; and the demodulator unit is used for demodulating the modulated square wave signal into a direct current signal with the same amplitude. According to the scheme, the forward converter is used as a modulator, so that a magnetic isolation feedback circuit with good temperature characteristics and radiation resistance characteristics is provided.

The invention discloses a special optical cable, a preparation method and sensing equipment with the special optical cable, the special optical cable comprises an optical fiber body, a high-temperature-resistant coating layer, a primary buffer layer, a secondary buffer layer, a reinforcer layer and a sheath layer which are sequentially arranged from inside to outside, and the high-temperature-resistant coating layer comprises an inner layer, a transition layer and an outer layer which are sequentially arranged from inside to outside. By designing the transition layer, efficient combination of the inner layer and the outer layer is achieved, the layering problem is avoided, and the high temperature resistance, bending resistance, compression resistance and other performance of the optical cable are remarkably improved; the special optical cable has the advantages of light weight, high temperature resistance, fast heat conduction, strong electric field and strong magnetic field environment resistance, bending resistance, compression resistance, high heat sensitivity, high mechanical property, high wear resistance, flame retardance, radiation resistance, corrosion resistance and the like, and is suitable for being applied to structural health monitoring equipment with anti-electromagnetic interference. The temperature, vibration and other parameters of the surface structure of an object or a material are monitored and stored, and the system serves for structural health monitoring and data storage of an aircraft in a flight environment.

The invention discloses a pentabasic high-entropy spinel oxide for an isotope thermophotovoltaic system, a coating and a preparation method of the pentabasic high-entropy spinel oxide. The five-element high-entropy spinel type oxide is (Cu < 0.2 > Mn < 0.2 > Fe < 0.2 > Cr < 0.2 > Ni < 0.2 >) < 3 > O < 4 >. The raw material of the coating paint comprises the five-membered high-entropy spinel oxide. The quinary high-entropy spinel oxide has excellent emission characteristics, so that the spectral intensity of thermal radiation emitted by a hot end is ensured, and more available photons can reach a photovoltaic module at the rear end; the high-entropy material has excellent high-temperature resistance and radiation resistance, and the stability of the high-entropy material in the isotope heat source surface high-temperature and high-radiation working environment can be guaranteed.