754 results about "Radiation resistance" patented technology

The invention discloses a corrosion-resistant and flame-retardant cross-linked polyolefin cable, and belongs to the technical field of polyolefin cable manufacturing. The corrosion-resistant and flame-retardant cross-linked polyolefin cable comprises a conductor wrapped with an isolating layer, an oxygen isolating layer and an insulating layer are sequentially extruded outside the isolating layer, then a belting layer is wrapped outside the isolating layer, and then a polyolefin composite shielding material inner shielding layer containing ferrite and a ceramic flame-retardant polyolefin composite material flame-retardant layer are sequentially extruded outside the isolating layer. An aluminum foil Mylar tape is lapped to form an outer shielding layer, finally, a halogen-free low-smoke flame-retardant corrosion-resistant polyolefin mixture outer protection layer is coated, and a protective coating is coated. The corrosion-resistant and flame-retardant cross-linked polyolefin cable is simple in structure and easy to manufacture, has excellent mechanical properties, high pressure resistance, tensile resistance, bending resistance, flame retardance, waterproofness, corrosion resistance, aging resistance, interference resistance, radiation resistance and high and low temperature impact resistance, and prolongs the high-temperature service life of the cable.

The invention relates to the technical field of SRAM (Static Random Access Memory) memory anti-radiation testing, and discloses an SRAM memory anti-radiation testing method and system based on running state injection, and the method comprises the following steps: system initialization, mapping preparation and time sequence baseline establishment; carrying out model quantitative compiling, sensitivity analysis and physical bit candidate generation; generating a running state injection plan and loading a test case; performing operation state execution, disturbance injection and synchronous monitoring acquisition; multi-source triggering, weight read-back and fault decoupling judgment are carried out; and performing quantitative evaluation on anti-radiation performance, constructing a degradation curve and outputting a report. The system corresponds to the method. According to the invention, a hardware-in-the-loop operation state injection and online evaluation technology is constructed, and the technical problems of guidance and position limited disturbance / equivalent irradiation injection based on weight bit level sensitivity and logic-physical mapping are solved.

The invention relates to a full-automatic test system and method compatible with multi-type component irradiation tests, and the system comprises an irradiation main control board, an irradiation test board and an irradiation load board which are disposed in an irradiation room and are connected through a cable, and an electronic load, a programmable power supply, an upper computer and a digital oscilloscope which are disposed in a test preparation room. The system can compatibly support the irradiation test of the total dose effect and the single event effect, is suitable for the rapid assessment demand of multiple types of COTS components on a large scale, and can meet the urgent demand of the commercial spaceflight field for the evaluation of the radiation resistance of the COTS components.

The invention discloses a cellular structure of a shield gate trench MOSFET and a manufacturing method thereof, the cellular structure of the shield gate trench MOSFET comprises a substrate, a drift region and an interlayer dielectric layer, the drift region is provided with a deep trench, and the deep trench is internally provided with a shield gate, an intermediate oxide layer and a control gate; a body region and a source region are formed at the upper part of the drift region through injection, the interlayer dielectric is provided with a source electrode contact hole which penetrates through the source region and extends into the body region, and highly doped contact regions are formed on the side wall and the bottom of the source electrode contact hole through injection; and a charge balance region is formed below the source electrode contact hole through high-energy ion implantation. According to the invention, by arranging the charge balance region, the lateral depletion of the shield gate to the adjacent drift region can be enhanced when the shield gate trench MOSFET device is in a reverse bias state, the specific on-resistance of the device is reduced, the depletion of the drift region of the epitaxial layer is accelerated, and the reliability and radiation resistance of the device are improved.

The invention discloses a high-capacity solid state disk single event effect testing method and device based on high-energy particles. The testing method comprises the steps that an SSD user data preset experiment is carried out; based on the data preset experiment, utilizing a device to carry out an irradiation test, judging whether the SSD module has errors such as single event locking and function interruption under an irradiation condition, determining a judgment result, carrying out quantitative calculation on the errors, and outputting a function test result; based on the function test result, performing a silent data destruction test in a post-irradiation test stage; recording silent data destruction and fixed bit error data according to the silent data destruction test; and based on the silent data destruction and the fixed bit error data, carrying out error characteristic quantification calculation, and outputting a calculation result. According to the method, parameterized evaluation of the radiation resistance of the SSD can be realized.

The invention discloses an anti-radiation aluminum-based layered composite board and an explosive welding method thereof, and belongs to the technical field of metal material welding. According to the method, aluminum or aluminum alloy serves as a base plate, tantalum or tantalum alloy serves as a compound plate, a titanium / titanium alloy middle transition layer is introduced, direct impact of explosive detonation on the compound plate is avoided through an aluminum protection plate, a powdery emulsion explosive is combined with an inert diluent to regulate and control energy parameters, and gaps between plates are accurately set based on the explosive welding window theory; and one-time forming metallurgical bonding of multiple layers of heterogeneous materials is achieved. The density of the obtained composite board is reduced by 40% compared with that of a traditional lead protection layer, and the composite board has the characteristics of radiation resistance, light weight, high strength and corrosion resistance and is suitable for manufacturing of spacecraft radiation protection layers and other deep space equipment.

The invention discloses a diamond piezoresistive material and pressure sensing application thereof, and particularly relates to a boron-doped diamond-based piezoresistive material and an application method thereof in a sensor, a gradient doping structure and heterogeneous layer design are adopted, and the diamond piezoresistive material with high sensitivity, high linearity, temperature stability, corrosion resistance and radiation resistance is constructed; by optimizing a CVD process and a pattern etching structure, stable piezoresistive response in an environment of-60 DEG C to 250 DEG C is realized, the cycle life exceeds 10 times, and the high-reliability piezoresistive sensor is suitable for high-reliability sensing devices under extreme working conditions such as aerospace engines, deep sea detection equipment and nuclear reactors.

A glass material with low refractive index and radiation resistance, method for preparing the same, and applications thereof. The glass material consists of the following components by mole percent: 60-80% SiO2, 2-10% B2O3, 0.1-1% CeO2, 5-10% Na2O, 2-10% K2O, 1-8% Al2O3, 0-2% CaF2, 0-1% As2O3, and 1-5% alkaline earth metal oxides, wherein the alkaline earth metal oxides are selected from at least one of BaO, SrO, CaO, and MgO. The glass material has a refractive index of ≤1.47, a glass transition temperature of ≤550° C., a yield point temperature of 645° C., a softening point temperature of ≤748° C., and a coefficient of thermal expansion of (82-87)×10−7 / ° C. After exposure to a 4700 Gy dose of X-ray radiation, the transmittance decreases by ≤2%. The glass material can be used as cladding glass material for the preparation of optical glass fibers and fiber panels, capable of meeting the requirements for radiation environment applications.

The invention discloses a preparation method of a high-temperature-resistant, high-strength, high-electric-conductivity and high-heat-conductivity copper-niobium heterogeneous nano composite fine filament, which comprises the following steps of: 1, winding a copper strip and a niobium strip, placing the wound copper strip and niobium strip in a copper sheath, carrying out homogeneous heating and isothermal hot extrusion deformation, and then carrying out multi-pass straight drawing, intermediate annealing and disc drawing to obtain a copper-niobium composite wire; 2, bundling and assembling the copper-niobium composite wires, placing the copper-niobium composite wires in a copper sheath, carrying out homogeneous heating and isothermal hot extrusion deformation, and then carrying out multi-pass straight drawing, intermediate annealing and disc drawing to obtain a copper-niobium multi-core composite round wire; and 3, performing multi-pass drawing and vacuum annealing on the copper-niobium multi-core composite round wire in sequence. The ultra-plastic deformation process combining copper and niobium winding combination with cluster drawing is adopted, the fine wire with high tensile strength, good bending and tensile plasticity, excellent high-temperature thermal stability and high-temperature stress relaxation resistance, excellent radiation resistance and excellent strong current matching is obtained, the process is simple, control is easy, and the method is suitable for industrial production. The industrial batch production is easy to realize.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses an anti-radiation SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure which comprises a drain electrode, a semiconductor epitaxial layer, a source electrode, a grid electrode and a grid oxide layer positioned on the surface of the grid electrode, a P well layer, a heavily-doped P well I and a heavily-doped N well layer are formed in the N diffusion layer of each MOS cell through ion implantation, the heavily-doped P well I further comprises a heavily-doped P well II, and the height of the cross section of the heavily-doped P well II is the same as that of the cross section of the heavily-doped N well layer; the N diffusion layer further comprises a carrier storage layer. According to the method, the trench is introduced into the device JFET, P-type impurities are injected into the side wall and the bottom of the trench to form the P-type doped region, the trench is filled with dielectric materials such as SiO2 and the like, and the trench structure transfers a strong electric field at a gate oxide interface to the bottom of the JFET region, so that the electric field intensity in thin gate oxide is greatly reduced, and the single-particle gate penetration resistance of the SiC MOSFET device is improved.

The invention discloses a photoelectric composite aluminum alloy conductor aerospace cable and a preparation method, and belongs to the technical field of photoelectric composite cables, the cable comprises an optical fiber unit, a conductor unit, an insulating layer, an anti-electromagnetic unit and a sheath layer; the anti-electromagnetic unit is obtained by weaving double-layer metallized polyimide fibers; the double-layer metallized polyimide fiber sequentially comprises a polyimide fiber, a first metal coating and a second metal coating from inside to outside. The surface of the polyimide fiber is coated with modified polydopamine; the first metal coating is copper; and the second metal coating is silver and / or nickel. The double-layer metal coating can form a more compact metal outer layer on the surface of the polyimide fiber, the requirements of the severe external environment of aerospace are met, a conductive network with higher stability is formed, and the electromagnetic shielding effect is remarkably improved. Moreover, the polyimide fiber is coated with a polydopamine coating, so that the fiber is not damaged, and the overall high and low temperature resistance and radiation resistance can be improved.

The invention relates to a radiation hardening band-gap reference current source circuit, and belongs to the technical field of radiation resistance of integrated circuits. Over-degradation of the threshold in a high total dose environment is focused on a circuit design level, closed-loop adjustment of the threshold voltage is realized through total dose detection and a dynamic compensation mechanism, and reliability and stability of the circuit in the high dose radiation environment are remarkably improved. Through the embedded logic of the reinforced circuit, the anti-radiation performance of the reinforced circuit is ensured, and the reinforced circuit can work normally in a high-dose environment. Reliable triggering and system self-recovery in a full dose range can be realized through a bias closed-loop design provided by a reference circuit for a reinforced loop, and the application requirements of extreme environments such as spaceflight and nuclear energy are met. The method has the advantages of anti-radiation effect, good dynamic nature, strong transportability and the like.

The invention relates to a multi-threshold 16T anti-radiation SRAM (Static Random Access Memory) storage unit circuit and a memory, a storage module in the circuit is of a bistable structure formed by two cross-coupled phase inverters formed by PMOS (P-channel Metal Oxide Semiconductor) transistors, and two storage nodes are formed; the redundant storage module adopts NMOS (N-channel metal oxide semiconductor) transistors to form a bistable structure, and two redundant nodes are formed to serve as redundant backups of the storage module; when the read-write operation control module reads or writes data, a word line is activated, and the data is read from the storage node and the redundant node or written into the storage node and the redundant node through the switched-on transistor; and the bit line driving module is used for driving the bit lines during reading and writing operations. According to the circuit, by introducing redundant nodes and a feedback mechanism, efficient resistance and recovery of single-particle and multi-node upset are achieved, the anti-radiation capacity is improved, the static noise margin, the read-write speed and the power consumption performance are optimized, and the circuit is suitable for the reliable data storage requirement in the high-radiation environment.

The invention relates to the technical field of image processing, and discloses a plastic package material defect detection method and system in a radiation environment based on machine vision. The method comprises the following steps: acquiring an anti-radiation image in a gamma-ray environment through a lead-tungsten alloy shielding high-radiation tolerance type image sensor, and performing adaptive contrast enhancement. Defect features including microcracks, bubbles, deformation and chromatic aberration are extracted by using dual-tree complex wavelet transform and an HSV color space; and inputting the multi-dimensional features into an AR-DCNN network to carry out multi-task learning, identifying defect types and carrying out scoring. Based on Weibull distribution and a random forest algorithm, the radiation-resistant life of the plastic package material is predicted, and a material degradation curve and safety threshold early warning are obtained. According to the invention, standardized processing of the radiation damage quantitative index is realized, and the prediction accuracy is effectively improved.

The invention relates to an anti-radiation level conversion circuit. The circuit comprises a level conversion circuit based on a DICE structure and an anti-radiation reinforcement circuit. The level conversion circuit based on the DICE structure is used for realizing level conversion by adopting redundant control nodes; comprising an input module and a DICE module, and the DICE module comprises four branches formed by connecting one PMOS transistor and one NMOS transistor in series; drain electrodes of the PMOS transistor and the NMOS transistor in each branch are connected to serve as a control node; the input module is used for controlling an MOS switch to transmit a differential input signal to the DICE module through a transmission tube; and the anti-radiation reinforcing circuit is used for performing feedback regulation on the control nodes of the second branch and the third branch through the cross coupling structure. The circuit can complete level switching from ultra-low voltage to high voltage, the radiation resistance of the level converter is improved, the level converter can resist severe environments, and meanwhile power consumption and delay are reduced.

The invention discloses a low-power-consumption radiation-resistant quadrature voltage-controlled oscillator based on an SOI (Silicon On Insulator) process, relates to the technical field of quadrature voltage-controlled oscillators, and is used for solving the technical problems that an existing quadrature voltage-controlled oscillator is low in radiation resistance in a harsh radiation environment and does not have the characteristic of low power consumption. The invention discloses a low-power-consumption anti-radiation quadrature voltage-controlled oscillator based on an SOI process. The low-power-consumption anti-radiation quadrature voltage-controlled oscillator comprises a first voltage-controlled oscillator, a second voltage-controlled oscillator, a first tail filter and a second tail filter, the first voltage-controlled oscillator and the second voltage-controlled oscillator respectively form an LC resonant cavity with a parasitic capacitor of an inductor and a varactor through the inductor; the first tail filter is connected with the first voltage-controlled oscillator, and the second tail filter is connected with the second voltage-controlled oscillator; two inductors of the first tail filter and the second tail filter are coupled; lC resonant cavities of the first voltage-controlled oscillator and the second voltage-controlled oscillator output oscillation waveforms, and negative impedance is formed through configured transistor pairs, so that the waveforms are output constantly.

The invention relates to the technical field of chip design, in particular to a test method and system for a chip simulation model. The method comprises the following steps: acquiring chip data, and performing chip circuit logic analysis to obtain circuit logic data; performing signal transmission simulation based on the circuit logic data to obtain signal transmission data; constructing a chip simulation model according to the circuit logic data and the signal transmission data; performing particle bombardment on the chip simulation model to obtain particle data; performing energy spectrum classification based on the particle data to obtain proton data and heavy ion data; performing single event upset fault analysis on the chip simulation model according to the proton data to obtain single event upset data; and performing multi-particle upset fault analysis on the chip simulation model according to the heavy ion data to obtain multi-particle upset fault data. The reliability of the chip in the radiation environment is evaluated and optimized based on the chip design technology, so that the radiation resistance of the chip is improved.

The invention relates to an optical fiber coupling type focusable laser cutting device. According to the device, a laser transmitter transmits laser through an input optical fiber; the laser receiving module comprises a mounting seat, an optical fiber base, a transmission mechanism and a focusing mechanism, the focusing mechanism drives the optical fiber base to move in the axial direction through the transmission mechanism, and motor-free focusing in the nuclear radiation environment is achieved; the laser conduction module comprises a parabolic reflector for collimating and focusing the laser; according to the laser cutting device, the focusing technology depending on a motor in the prior art is converted into full-mechanical transmission focusing design, the failure risk of electronic elements such as the motor in the radiation environment is avoided, and through cooperation of the focusing mechanism, the transmission mechanism and the limiting pin, the laser cutting efficiency is improved. The high-precision and high-reliability focusing function is achieved, and the laser cutting device which is good in radiation resistance, high in long-term operation stability and long in service life is achieved in the nuclear radiation environment.

The utility model discloses an alloy complex capable of improving heat dissipation performance. The alloy complex comprises an inner layer, a heat dissipation layer and an outer layer, the inner layer is a metal material layer or an alloy material layer which is easy to process; the heat dissipation layer comprises a heat dissipation net and filling powder filled in the heat dissipation net; the outer layer is a high temperature resistant metal material layer or a high temperature resistant alloy material layer; the heat dissipation layer is used for absorbing and transferring heat generated by the outer layer in the forming process of the alloy composite and reducing deformation of the outer layer. The alloy complex disclosed by the utility model can be widely applied to electronic equipment, aerospace equipment, power equipment, precision equipment or anti-radiation equipment, and when related products are processed by taking the alloy complex as a base material, the processed products are not only good in heat dissipation performance, but also high in strength, light in weight and strong in corrosion resistance and radiation resistance; and the use requirements of products can be met.

The invention discloses a radiation-resistant protective cable for a nuclear power station and a preparation method thereof, and belongs to the technical field of cables, the radiation-resistant protective cable for the nuclear power station comprises a cable body and a sheath layer, and the sheath layer comprises the following components in parts by mass: 100 parts of polypropylene resin, 20-40 parts of ethylene propylene diene monomer and 5-12 parts of modified multi-walled carbon nanotubes. 8-15 parts of a heat conduction enhancer, 2-6 parts of an antioxidant, 1-3 parts of a heat stabilizer and 4-8 parts of a plasticizer; the heat conduction reinforcing agent is prepared by carrying out surface modification on composite powder of aluminum nitride and boron nitride through a silane coupling agent. Through the synergistic effect of the modified multi-walled carbon nanotubes and the surface modified heat-conducting enhancer, the heat-conducting property, radiation resistance and heat stability of the cable are remarkably improved on the premise of keeping excellent electrical insulation property.

The invention relates to a high-temperature-resistant and radiation-resistant armored coaxial radio frequency cable, which comprises a copper core, a first stainless steel tube, a silicon dioxide micro powder layer, a second stainless steel tube, a copper tube and an outer shielding protection tube which are sequentially arranged from inside to outside, the silicon dioxide micro powder layer is filled in a gap between the first stainless steel tube and the second stainless steel tube, the copper tube wraps the second stainless steel tube, and the outer shielding protection tube wraps the copper tube. The armored coaxial radio frequency cable is small in outer diameter, has good radiation resistance, high temperature resistance and high signal transmission stability, and can meet the insulation requirements of high-temperature scenes such as nuclear power and the like.

The invention provides a rare earth silicon germanate scintillating material and a preparation method and application thereof, in particular to a rare earth silicon germanate scintillating material with high thermal stability and strong radiation resistance and a preparation method and application thereof, the general formula of the rare earth silicon germanate scintillating material with high thermal stability and strong radiation resistance is RE2 (1-x-delta / 2) Ce2xGedeltaSi (1-y + delta) Gey-deltaOz, in the formula, 0 lt; x is more than or equal to 0.05, y is more than or equal to 0.15 and less than or equal to 0.5, delta is more than or equal to 0 and less than or equal to 10 <-4 >, z is more than or equal to 4.95 and less than or equal to 5.05, RE represents a rare earth element, and the rare earth element is selected from at least one of lanthanum (La), lutetium (Lu), yttrium (Y) and gadolinium (Gd). The rare earth silicon germanate scintillating material provided by the invention has the characteristics of strong radiation damage resistance, high scintillation light output, low afterglow and the like while greatly improving the thermal stability, and can be used in occasions with extremely high requirements on the thermal stability or radiation resistance of the material, such as high-energy physical experiments, nuclear medicine imaging, oil exploration wells and the like.

The invention relates to the technical field of particle deposition and semiconductor anti-radiation analysis, and discloses an alpha particle energy deposition calculation method based on a Monte Carlo particle transport simulation tool, which sequentially comprises the steps of material and particle source setting, energy deposition score indicator use, single particle event statistics, soft error rate calculation and output and data analysis. By adopting the method and the device, the requirements of field experiments are greatly reduced, and the time and the cost required by the experiments are saved. Moreover, through the simulation method, designers can more efficiently calculate the energy deposition of the alpha particles in the semiconductor device and obtain the soft error rate of the alpha particles, and radiation hardening design of the semiconductor device can be carried out according to the data, so that the radiation resistance and reliability of the device are improved.

The invention belongs to the technical field of narrow-band optical radiation imaging, and particularly relates to a narrow-band EUV and BEUV radiation imaging device based on a nano polycrystalline hexagonal boron nitride scintillator. The imaging device is composed of a nano polycrystalline hexagonal boron nitride scintillator plated with Zr, Mo or Nb metal, a high-precision camera, a vacuum interface flange and a shielding shell, and narrow-band selective imaging can be achieved in the wave band of 6-14 nm. The radiation imaging device has high sensitivity, narrow-band selectivity and excellent radiation resistance to 13.5 nm EUV light and 6.7 nm BEUV light, and compared with a traditional YAG-based imaging device, the radiation imaging device has remarkable advantages. The invention provides an innovative solution for high-performance EUV and BEUV radiation imaging, and has important application value in the field of EUV and BEUV beam diagnosis.

The invention relates to the technical field of photovoltaic adhesive films, and discloses an anti-radiation photovoltaic packaging adhesive film, a preparation method thereof and a photovoltaic module. The adhesive film is of a multi-layer co-extrusion composite structure formed by co-extrusion molding and irradiation, and comprises an upper surface layer, a middle functional layer and a lower surface layer, the upper surface layer is a radiation-resistant polymer matrix (such as EVA-g-St, EVA-g-(alpha-MeSt), POE-g-St and an EVA / POE-aromatic resin blend); the middle functional layer comprises a packaging resin matrix, an anti-radiation agent (which is a nano-scale radiation protection material such as a rare earth oxide, a heavy metal oxide, a boron-containing compound and a polymer derivative of a benzotriazole type ultraviolet absorbent) and a stabilizer; and the lower surface layer is a bonding surface layer formed by light-transmitting bonding resin. The adhesive film is good in radiation resistance, the light transmittance, the cohesiveness, the elongation at break retention rate, the yellowing resistance, the power attenuation resistance of a component and the like after accelerated radiation are obviously improved, and the service life of the component under strong radiation can be prolonged.

The invention belongs to the technical field of photovoltaic cell materials, and particularly discloses a high-weather-resistance ultraviolet blocking photovoltaic backboard base film and a preparation method and application thereof. The high-weather-resistance ultraviolet blocking photovoltaic backboard base film is of a multi-layer structure and comprises the surface layer and the core layer, the modified master batch containing the ultraviolet light absorber and the ultraviolet blocking agent is added when the surface layer is prepared, the weather resistance of the base film can be improved (more than 60 H), the base film can have high blocking performance in the ultraviolet band, and the service life of the base film is prolonged. Normal use of the photovoltaic backboard in drought and high ultraviolet radiation weather is ensured, and durability and power generation efficiency of photovoltaic accessories are improved. The composition and the structure of the base film are redesigned, various ultraviolet light absorbers and blocking agents are compounded for use, and meanwhile, a three-layer co-extrusion and two-way stretching preparation process is adopted, so that the base film can be endowed with good weather resistance, radiation resistance and mechanical property, the production cost of the base film is reduced, and the base film has a good application prospect and a relatively high economic value.

Disclosed in the present invention is a radiation-insensitive single-mode optical fiber, comprising a core, a first cladding, and a second cladding which are sequentially arranged from inside to outside, or comprising a core, a first buffer layer, a first cladding, a second buffer layer, and a second cladding which are sequentially arranged from inside to outside. The core, the first buffer layer, the first cladding, the second buffer layer, and the second cladding are all made of quartz glass doped with a cerium element, an aluminum element, and a fluorine element. The contents of the cerium element, the aluminum element, and the fluorine element are constant in the radial directions of the core, the first cladding, and the second cladding, respectively, and linearly vary in the first buffer layer and the second buffer layer, respectively. In the present invention, by regulating and controlling the contents of the cerium element, the aluminum element, and the fluorine element in the core, the first cladding, and the second cladding of the optical fiber, the stress distribution of the optical fiber is optimized, the residual stress is reduced, and the generation of fatigue bonds and wire drawing defects in the optical fiber is reduced, thereby improving the radiation resistance of the optical fiber.

The invention relates to the technical field of cooling of particle accelerators and nuclear power equipment, and discloses a cooling device suitable for high-power rays, which comprises an absorber assembly, a cooling water system assembly, a vacuum tube assembly, a shield assembly and a support assembly. The absorber assembly is formed by welding internal graphite and external copper through a brazing process, and air holes penetrating to a graphite layer are formed in the copper and communicated with an air cavity in the graphite to form a vacuum sealing cavity. The cooling water system assembly comprises a water segregator with two layers of water inlet ring cavities and two layers of water outlet ring cavities, and uniform flow distribution is ensured. And the absorber cooling water pipe is embedded into the copper and is connected with the U-shaped pipe to form a cooling loop. The electron beam bombards the graphite to generate heat, and the heat is transferred to the copper and taken away by cooling water in the cooling water pipe embedded in the copper. The shield assembly is arranged around the vacuum tube assembly to prevent radiation leakage. The cooling device realizes effective heat dissipation of 8GeV high-power rays, and has excellent radiation resistance and extremely long fatigue life.

The invention relates to the technical field of alloy materials, and provides a low-activation high-strength anti-radiation high-entropy alloy and a preparation method thereof. The components of the alloy are (Fe < 3 > < 0.4 > Cr < 3 > V < 3 > < 0.3 > Ti < 3.0 > Ta < 3.0 > W < 3.0 >) < 100-x > C < x >, and x is larger than or equal to 0.5 and smaller than or equal to 7. The yield strength of the high-entropy alloy at the room temperature is larger than 1300 MPa, the plastic deformation amount is 15% or above, the room-temperature brittleness is greatly relieved, and compared with an existing low-activation high-entropy alloy, the low-activation high-entropy alloy has the advantages of being high in strength and toughness, low in cost and the like. In addition, after high-energy low-flux He plasma irradiation, the anti-irradiation performance of the alloy is improved, and the mechanical performance and the irradiation performance of the material can be regulated and controlled through alloy components. The low-activation high-entropy alloy serves as a nuclear material of a fusion reactor and a new-generation fission reactor, the problems that an existing traditional low-activation nuclear material is high in cost, insufficient in mechanical property and the like are solved, and application and development of nuclear energy in the fields of aviation and national defense can be further promoted.

The invention discloses a deeply-curable zirconia-containing dental repair resin and a preparation method thereof.The preparation method comprises the steps that a double-bond-containing silane coupling agent is added into a zirconia dispersion liquid and a silicon dioxide dispersion liquid respectively, modification reaction is conducted in the stirring state, and a modified solution # imgabs0 # and a modified solution II are obtained; carrying out spray drying on the modified solution I and the modified solution II through a three-fluid spray head to obtain a zirconium oxide and silicon oxide nanocluster body; uniformly mixing and stirring the zirconium oxide and silicon oxide nanocluster with a methacrylate organic matrix and a photoinitiator; and carrying out light curing treatment on the mixture to obtain the zirconium oxide dental repair resin. The zirconium oxide dispersion liquid, the silicon dioxide dispersion liquid and the three-fluid spray head are matched, the mechanical performance is improved on the premise that the X-ray radiation resistance and the effective curing depth are guaranteed, the dependence of the industry on zinc oxide, barium oxide and strontium oxide is broken through, the problem that a zirconium oxide material cannot be deeply cured due to the high refractive index is solved, and the application prospect is good.