The utility model provides a DEMOS device and an
integrated circuit. The DEMOS device comprises a substrate, a well region, a gate structure, a source-drain injection region and a drift region, wherein the gate structure is positioned on one side, far away from the substrate, of the well region; and the source-drain injection region and the drift region are positioned in the well region. The anti-
radiation reinforcing buffer region is located in the well region and surrounds the source region in the source-drain injection region, the isolation region is located on the surface of the substrate, and the
orthographic projection of the isolation region on the surface of the substrate surrounds the
orthographic projection of the anti-
radiation reinforcing buffer region on the surface of the substrate and surrounds the
orthographic projection of the drain region on the surface of the substrate. Therefore, the source region can be isolated from the isolation region, the change of the main body structure of the original DEMOS device is relatively small, and on the premise of ensuring the length of the channel between the source region and the drain region, even if the
silicon surface layer under the well region and the whole isolation region is inverted due to the
total dose irradiation effect, due to the existence of the anti-
radiation reinforced buffer region, the anti-
radiation effect of the DEMOS device is improved. And an electric leakage channel cannot be formed between the source region and the drain region, so that the anti-radiation capability is improved.