Single event radiation effect resistant reinforced latch circuit

An anti-single-event radiation, latch circuit technology, applied in logic circuits, electrical components, generating electrical pulses, etc., can solve the problems of weakening anti-SEU performance, inability to shield SET, etc., to suppress SET and SEU effects, power consumption and the effect of small area overhead and improved resistance to single-event flipping effects
CN104202037AInactive Publication Date: 2014-12-10HEFEI UNIV OF TECH
2 Cites 29 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HEFEI UNIV OF TECH
Publication Date
2014-12-10
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a single event radiation effect resistant reinforced latch circuit. The single event radiation effect resistant reinforced latch circuit comprises a first transmission gate unit, a second transmission gate unit, a Schmitt inverter, a conventional input separation inverter, a first input separation clock-controlled inverter, a second input separation clock-controlled inverter, a delay circuit and a MullerC unit circuit. When the single event radiation effect resistant reinforced latch circuit operates under a transparent mode, a hysteresis effect of the Schmitt inverter and a delay difference of a latch interior unit are effectively used and SET pulses from a combinational logic unit are shielded through the MullerC unit; when the single event radiation effect resistant reinforced latch circuit operates under a latch mode, any interior node generating SEU due to the irradiation effect can be recovered through states of other nodes through a DIC unit structure having a self-recovery capability and correct output of the latch is guaranteed; accordingly the single event radiation effect resistant reinforced latch circuit has the advantages of effectively eliminating the radiation effect influences and being applicable to a clock gating circuit and small in power consumption and area costs.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of microelectronic integrated circuits, in particular to a reinforced latch circuit against single event radiation effects. Background technique

[0002] After the integrated circuit enters the nanoscale process, with the continuous reduction of the size of the semiconductor process and the continuous reduction of the power supply voltage, the node capacitance of the circuit is continuously reduced, so that the amount of charge required to flip the logic state of the circuit node (critical charge ) is also reduced, and the circuit is more susceptible to single-event effects caused by high-energy particles such as heavy ions, alpha particles, neutrons, and protons in space.

[0003] The single event effect refers to the energy deposition of high-energy charged particles passing through the sensitive area of ​​the microelectronic device, generating a large number of electron-hole pairs, which can be collec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More