Single event radiation effect resistant reinforced latch circuit

Abstract

The invention discloses a single event radiation effect resistant reinforced latch circuit. The single event radiation effect resistant reinforced latch circuit comprises a first transmission gate unit, a second transmission gate unit, a Schmitt inverter, a conventional input separation inverter, a first input separation clock-controlled inverter, a second input separation clock-controlled inverter, a delay circuit and a MullerC unit circuit. When the single event radiation effect resistant reinforced latch circuit operates under a transparent mode, a hysteresis effect of the Schmitt inverter and a delay difference of a latch interior unit are effectively used and SET pulses from a combinational logic unit are shielded through the MullerC unit; when the single event radiation effect resistant reinforced latch circuit operates under a latch mode, any interior node generating SEU due to the irradiation effect can be recovered through states of other nodes through a DIC unit structure having a self-recovery capability and correct output of the latch is guaranteed; accordingly the single event radiation effect resistant reinforced latch circuit has the advantages of effectively eliminating the radiation effect influences and being applicable to a clock gating circuit and small in power consumption and area costs.

Description

technical field [0001] The invention relates to the technical field of microelectronic integrated circuits, in particular to a reinforced latch circuit against single event radiation effects. Background technique [0002] After the integrated circuit enters the nanoscale process, with the continuous reduction of the size of the semiconductor process and the continuous reduction of the power supply voltage, the node capacitance of the circuit is continuously reduced, so that the amount of charge required to flip the logic state of the circuit node (critical charge ) is also reduced, and the circuit is more susceptible to single-event effects caused by high-energy particles such as heavy ions, alpha particles, neutrons, and protons in space. [0003] The single event effect refers to the energy deposition of high-energy charged particles passing through the sensitive area of ​​the microelectronic device, generating a large number of electron-hole pairs, which can be collec...

AI Technical Summary

Problems solved by technology

However, the DICE structure cannot shield the SET transmitted from the upstream combinatorial logic, and with the continuous advancement of semiconductor technology, its anti-SEU performance is weakened after being affected by larger energy radiation particles

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