The application belongs to the technical field of circuit, and particularly relates to a blocking
glitch low-power double-edge flip-flop based on TFET, a module, a timing circuit, and a large-scale digital
integrated circuit adopting the corresponding timing circuit. The flip-flop is composed of twelve PTFET transistors P1-P12, twelve NTFET transistors N1-N12 and five inverters INV1-INV5. The blocking
glitch low-power double-edge flip-flop comprises an input stage, a latch circuit and an output stage. The input stage is composed of INV1, INV2, INV3, INV4, P1, P2, P3, N1, N2 and N3. The latch circuit is composed of P4, P5, P6, P7, P8, P9, P10, P11, N4, N5, N6, N7, N8, N9, N10 and N11. The output stage is composed of P4, N11, P12, N12 and INV5. The latch circuit and the output stage circuit share the devices P4 and N11; the input stage and the output stage both adopt the C
cell structure. The application solves the problems of
signal competition,
vulnerability to
glitch signals and high device
power consumption in the existing TFET flip-flop circuit.