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397 results about "Leakage power" patented technology

Leakage Power. The power consumed by the sub threshold currents and by reverse biased diodes in a CMOS transistor is considered as leakage power. The leakage power of a CMOS logic gate does not depend on input transition or load capacitance and hence it remains constant for a logic cell.

Leakage source detecting device based on infrared thermal imaging processing

ActiveCN102636313ASolve the problem of difficult detection and positioningIncrease lossDetection of fluid at leakage pointEngineeringLeakage power
The invention relates to a leakage source detecting device based on infrared thermal imaging processing, and the leakage source detecting device comprises an infrared thermal imaging camera and a microprocessor, wherein the microprocessor is used for analyzing, processing and judging damage conditions, leakage points, leakage zones and leakage degrees of walls of buildings or containers according to the thermal images, shot by infrared thermal imaging camera, of the walls or containers and relative input information, and the infrared thermal imaging camera is used for scanning a preprocessed detected object so as to obtain the temperature distribution information of the surfaces of the walls or the containers. The software of the microprocessor mainly comprises an infrared thermal imaging acquiring unit, an infrared thermal imaging preprocessing unit and a leakage quantitative detecting unit, and the software of the microprocessor analyzes the temperature field to the object to be detected through a digital image processing technology to judge whether the object to be detected has the defect of leakage or not. The leakage source detecting device provided by the invention can be used for not only rapidly detecting the existing of the leakage defect, but can also accurately detecting the leakage zone and degree and the influence scope. The leakage source detecting device provided by the invention provides an assessment method for leakage defects.
Owner:ZHEJIANG UNIV OF TECH

Distortion compensation device

In a distortion compensation device which uses distortion compensation coefficients to subject distortion compensation processing to an input signal and supply the result of the distortion compensation processing to a distorting device, calculates the distortion compensation coefficients based on the input signal before distortion compensation and the feedback signal fed back from the output side of the distorting device, and stores the calculated distortion compensation coefficients in association with the input signal, (1) the feedback signal is AD-converted; (2) the AD-converted output is subjected to fast Fourier transform (FFT) processing; (3) the FFT calculation result is used to calculate the value of either the signal-to-noise ratio SNR, or the adjacent channel leakage power ratio ACLR, or the noise level; (4) the delay time occurring in the distorting device and feedback loop is adjusted such that the difference between the above calculated value at the current time and the above calculated value at the immediately preceding time is either zero, or is equal to or less than a threshold value; and, (5) this adjustment processing is repeated to determine the accurate delay time, and based on this delay time the timing of each of the portions of the distortion compensation device is adjusted.
Owner:FUJITSU LTD

Stray energy power supplying method of electrical equipment status monitoring wireless sensing system and device thereof

The invention relates to a stray energy power supplying method of an electrical equipment status monitoring wireless sensing system; a vibration power-generating device, or a temperature difference power-generating device or a flux leakage power-generating deice is adopted to lead mechanical vibration energy or heat energy or flux leakage energy which is generated in the operating process of the electrical equipment to be converted into electrical energy, and the electrical energy is transformed and adjusted by a transformation module, and the transformed electrical energy is stored in an energy storage device such as a rechargeable battery, a capacitor and the like, so as to supply power for the node of the electrical equipment status monitoring wireless sensor. A device applied to the stray energy power supplying method comprises a stray energy power-generating module such as vibration power generation, temperature difference power generation or flux leakage power generation, an electrical energy conversion module and an electrical energy storage module which are arranged on the electrical equipment. The invention can effectively utilize stray energy generated in the operating process of the electrical equipment to supply power for the node of the wireless sensor.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI

High-performance low leakage power consumption master-slave type D flip-flop

The invention discloses a high-performance low leakage power consumption master-slave type D flip-flop. The high-performance low leakage power consumption master-slave type D flip-flop is characterized by comprising a clock signal inverter circuit, a master latch circuit, a slave latch circuit, an N-channel metal oxide semiconductor (NMOS) pipe power control switch, a P-channel Metal Oxide Semiconductor (PMOS) pipe power control switch and a maintaining inverter. The clock signal inverter circuit is connected with the master latch circuit, the clock signal inverter circuit is connected with the slave latch circuit, the master latch circuit is connected with the slave latch circuit, the slave latch circuit is connected with the maintaining inverter, the maintaining inverter is connected with the PMOS pipe power control switch, the clock signal inverter circuit, the master latch circuit and the slave latch circuit are all connected with the NMOS pipe power control switch, and the maintaining inverter is connected with the PMOS pipe power control switch. The high-performance low leakage power consumption master-slave type D flip-flop has the advantages of being simple in circuit structure, small in the number of transistors, simple in timing sequence switching of a normal working state and a sleep mode, good in working performance, low in dynamic power consumption and leakage power consumption, and suitable for being used as a standard cell of a digital circuit to be applicable to the design of a low power consumption integrated circuit in deep submicron complementary metal-oxide-semiconductor transistor (CMOS) process.
Owner:NINGBO UNIV
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