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High-performance low leakage power consumption master-slave type D flip-flop

A technology with leakage power and high performance, applied in the field of high-performance and low-leakage power master-slave D flip-flops, which can solve the problems of increasing the dynamic power consumption of flip-flops, increasing the silicon area of ​​flip-flops, and increasing manufacturing costs. , to achieve the effect of saving leakage power consumption, simple timing switching, and simple circuit structure

Inactive Publication Date: 2013-07-10
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage of this circuit is that the clock inverter is still active, and additional control signals are required to enter the sleep and active states, resulting in complex operation timing; the memory unit is always active, which increases the dynamic power consumption of the flip-flop. Moreover, the use of more transistors increases the silicon area of ​​the flip-flop, thereby increasing the manufacturing cost

Method used

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  • High-performance low leakage power consumption master-slave type D flip-flop
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  • High-performance low leakage power consumption master-slave type D flip-flop

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Embodiment Construction

[0024] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0025]A high-performance low-leakage power consumption master-slave D flip-flop, including a clock signal inverter circuit, a master latch circuit, a slave latch circuit, an NMOS tube power control switch, a PMOS tube power control switch, and a holding inversion Device I5, the clock signal inverter circuit includes a first inverter I1 and a second inverter I2 for inverting the input clock signal, the output terminal of the first inverter I1 is connected with the second inverter The input terminal of I2 is connected, the main latch circuit includes the first transmission gate TG1, the second transmission gate TG2, the third inverter I3 and the fourth inverter I4, the output terminal of the first transmission gate TG1 is connected with the fourth inverter The input terminal of the phaser I4 is connected, the non-inverting control terminal of th...

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Abstract

The invention discloses a high-performance low leakage power consumption master-slave type D flip-flop. The high-performance low leakage power consumption master-slave type D flip-flop is characterized by comprising a clock signal inverter circuit, a master latch circuit, a slave latch circuit, an N-channel metal oxide semiconductor (NMOS) pipe power control switch, a P-channel Metal Oxide Semiconductor (PMOS) pipe power control switch and a maintaining inverter. The clock signal inverter circuit is connected with the master latch circuit, the clock signal inverter circuit is connected with the slave latch circuit, the master latch circuit is connected with the slave latch circuit, the slave latch circuit is connected with the maintaining inverter, the maintaining inverter is connected with the PMOS pipe power control switch, the clock signal inverter circuit, the master latch circuit and the slave latch circuit are all connected with the NMOS pipe power control switch, and the maintaining inverter is connected with the PMOS pipe power control switch. The high-performance low leakage power consumption master-slave type D flip-flop has the advantages of being simple in circuit structure, small in the number of transistors, simple in timing sequence switching of a normal working state and a sleep mode, good in working performance, low in dynamic power consumption and leakage power consumption, and suitable for being used as a standard cell of a digital circuit to be applicable to the design of a low power consumption integrated circuit in deep submicron complementary metal-oxide-semiconductor transistor (CMOS) process.

Description

technical field [0001] The invention relates to a D flip-flop, in particular to a master-slave D flip-flop with high performance and low leakage power consumption. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the scale and complexity of existing integrated circuits are increasing day by day, and the problem of power consumption of integrated circuits is becoming more and more prominent. Power consumption has become a factor in addition to speed and area in integrated circuit design Another important constraint problem of IC, so the low-power design technology of integrated circuits has become an important research hotspot in the field of integrated circuit design. The power consumption of CMOS digital integrated circuits is mainly composed of dynamic power consumption, short-circuit power consumption and leakage current power consumption. In the CMOS technology above 0.13μm, the dynamic power consumption accounts f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K3/012
Inventor 邬杨波范晓慧倪海燕胡建平
Owner NINGBO UNIV
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