The invention provides a high-speed VCSEL
chip and a manufacturing method, and belongs to the technical field of semiconductors, the high-speed VCSEL
chip comprises a GaAs substrate, and the GaAs substrate is sequentially provided with an n-DBR, a
quantum well active region, a p-DBR, a p-In < 0.49 > Ga < 0.51 > P inner cavity
contact layer and a u-DBR; according to the invention, the number of pairs of series connection of the p-DBR is reduced, and the series resistance of the
chip is reduced, so that the resistance of the chip is still kept at a reasonable level when the chip with a small oxidation aperture is manufactured, and the reliability and the high-temperature performance of the chip are better; the
band gap width of the p-In0. 49Ga0. 51P inner cavity
contact layer is 1.88 eV which is much larger than 1.42 V of GaAs, and the negative effect of light absorption in the 850 nm
wave band is removed. A u-DBR table top is reserved at a light outlet, so that a large threshold
gain difference exists between a fundamental mode and a high-order mode. In addition, the thick p-In0. 49Ga0. 51P inner cavity
contact layer still has certain
light field intensity, so that the loss of a high-order mode is further increased, the chip can stably work in a fundamental mode, and the
modulation bandwidth is greatly increased.