8 results about "Common emitter" patented technology

An amplifier (700) includes a common emitter stage coupled to a first input (720) and a second input (725), a common base stage coupled to the common emitter stage and a first output (730) and a second output (735), and a cancellation path coupled to the common emitter stage and the common base stage and the first output and the second output. The cancellation path generates a first cancellation signal 180 degrees out of phase with a first leakage signal at the first output and a second cancellation signal 180 degrees out of phase with a second leakage signal at the second output. The cancellation path includes a first cancellation transistor (M6) coupled to the common emitter stage and the common base stage and the first output and a second cancellation transistor (M5) coupled to the common emitter stage and the common base stage and the second output.

This invention discloses a method for improving the stability and gain of a millimeter-wave differential amplifier core. The stability and gain improvement comprises common-mode rejection enhancement and differential-mode gain enhancement. The millimeter-wave differential amplifier core includes a common-emitter amplifier circuit composed of a first transistor and a second transistor, and a common-base amplifier circuit composed of a third transistor and a fourth transistor. A first bias resistor and a second bias resistor are connected in series between the two bases of the first and second transistors. A third bias resistor and a fourth bias resistor are connected in series between the two bases of the third and fourth transistors. The emitter of the third transistor is connected to the collector of the first transistor, and the emitter of the fourth transistor is connected to the collector of the second transistor. A bridging capacitor is also connected between the two bases of the third and fourth transistors. This invention significantly improves the differential-mode gain characteristics of the millimeter-wave band amplifier core while simultaneously enhancing common-mode rejection by combining series capacitors with common-mode gain reduction.

Aspects of the subject disclosure may include, for example, a common emitter stage having a differential input configured to receive an input signal from an input transmission line, a common base stage coupled with the common emitter stage and having a differential output configured to provide a differential output signal to an output transmission line, and a biasing network to bias the common base stage, the biasing network including components selected to limit common mode gain of the common base stage at relatively high frequencies of interest without affecting a differential mode gain of the common base stage. Other embodiments are disclosed.

The invention discloses a common-emitter insulated gate bipolar transistor module, which is characterized in that a module shell comprises two direct current positive terminals and two direct current negative terminals which are used for connecting a power supply side and a load side of a direct current circuit breaker and have the same potential; the bottom plate is detachably connected with the module shell; the copper-clad ceramic substrate is packaged in the module shell and is connected with the bottom plate; the copper-clad ceramic substrate comprises an upper copper-clad layer with a power circuit pattern, a middle layer and a lower copper-clad layer attached to the bottom plate; the power chip set is installed on the copper-clad ceramic substrate, the power chip set comprises a plurality of IGBT chips and a plurality of antiparallel diode chips, and emitting electrodes of all the IGBT chips are connected in a common-emitter mode through an upper copper-clad layer to form a multi-chip parallel common-emitter structure. The IGBT chip is provided with an independent grid control pin which is used for receiving an external driving signal so as to control the on or off of the IGBT chip.

The invention discloses an IGBT equivalent circuit model and an IGBT common emitter parasitic inductance calculation method. The combination of the capacitor and the voltage source of the direct current side branch can simulate energy supporting and filtering effects, the load inductance and the load parasitic inductance of the load side branch can reflect the influence of an inductive load and line stray parameters, and the grid electrode parasitic inductance circuit, the collector electrode parasitic inductance circuit and the emitter electrode parasitic inductance circuit of the IGBT branch correspond to stray inductances of different electrode outgoing lines respectively. Parasitic effects of grid driving signal transmission and a collector current path are accurately reflected, and an FWD chip and a freewheeling parasitic inductance circuit of a freewheeling branch truly simulate a freewheeling path and related stray parameters when an IGBT is turned off. In conclusion, the circuit is divided into the direct current side branch circuit, the load side branch circuit, the IGBT branch circuit and the follow current branch circuit, core elements and parasitic parameters of all the branch circuits are subjected to clear modeling, the multi-loop coupling characteristic of the IGBT in actual work can be completely reproduced, and the consistency of simulation analysis and engineering application is improved.

The present disclosure describes an RF amplifier implemented in SiGe HBT technology. The RF amplifier has a cascode stage including a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to a base of the CE transistor, and an RF output is coupled to a collector of the CB transistor. The RF amplifier includes a CB power down circuit arranged between a base of the CB transistor and the second voltage rail, and a CE power down circuit arranged between the base of the CE transistor and the second voltage rail. In a power down mode, the CE power down circuit couples the base of the common emitter transistor to the second voltage rail. The CB power down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.

The application discloses a gas-restraint type carbon nanotube field ionization thruster, which comprises a first pole plate, a second pole plate, a gas restraint plate, a sealing ring, a first shell and a second shell. The second pole plate is provided with carbon nanotube clusters with gaps generated by chemical vapor deposition and chemical point covering method, and the carbon nanotube clusters have larger tip electric field and higher ionization efficiency than common emitters, but the distribution of the carbon nanotube clusters is relatively sparse. The gas restraint device cooperates with the carbon nanotube clusters of the emitters to ensure that the carbon nanotube clusters have independent ionization spaces, avoids the working medium gas from escaping into the gaps of the carbon nanotube clusters, and thus improves the ionization efficiency. Meanwhile, the gas restraint device can further shield the electric field influence between the carbon nanotube clusters, avoids the mutual interference between different carbon nanotube clusters during propulsion, improves the controllability of the thruster, and further improves the ionization efficiency. The device can reduce the waste of the working medium gas and improve the service life of the thruster.

The invention discloses a solid-state electronic switch and arc extinction protection circuit for an alternating current short circuit test and a control method. The solid-state electronic switch and arc extinction protection circuit comprises a controller, a driving circuit, a bidirectional main switch branch and a composite absorption circuit, the bidirectional main switch branch is a bidirectional AC switch unit formed by connecting two fully-controlled power semiconductor switch devices in a common emitter back-to-back mode; the controller is connected with the driving circuit and is used for synchronizing an alternating-current voltage phase, outputting a short-circuit trigger signal to the driving circuit at a specified voltage phase angle, outputting a turn-off control signal after a preset short-circuit duration, monitoring a short-circuit current waveform in real time, recording protection action time and outputting a test result; control electrodes of the two switching devices are respectively connected with a driving circuit, the driving circuit synchronously drives the two switching devices to switch on and switch off an L-N loop so as to simulate short circuit, a collector electrode and an emitter electrode are connected with the independent composite absorption circuits in parallel, and each composite absorption circuit suppresses switch-off overvoltage and electromagnetic oscillation at the switch-off moment.