20 results about "Common emitter" patented technology

The utility model relates to an electronic circuit fault diagnosis practical training examination device, a teacher terminal comprises a first controller, student terminals comprise second controllers, the first controller and the second controllers are provided with wireless communication modules, the first controller and the plurality of second controllers are communicated through the wireless communication modules, and the first controller is connected with the student terminals through the wireless communication modules. The first controller and the second controller are also provided with display screens, and the first controller and the second controller are in communication connection with the display screens; the plurality of student terminals further comprise electronic circuit fault boards. The electronic circuit fault board comprises but is not limited to one or combination of more of an electronic doorbell circuit, a direct current stabilized power supply circuit, a sound control LED melody lamp circuit, a phototransistor and LM358-based light-operated switch circuit, a common emitter amplification circuit, a running water colored lamp circuit, a sound and light control lamp circuit and a single chip microcomputer application circuit; the electronic circuit fault board is connected with a power supply to form a loop. According to the utility model, examination can be carried out conveniently, and students can carry out various examination exercises.

Disclosed is an amplifier having a carrier amplifier configured as a common-emitter carrier power stage and a peaking amplifier configured as a common-emitter peaking power stage. Further included is power adaptive biasing circuitry coupled between the carrier amplifier and the peaking amplifier, wherein the power adaptive biasing circuitry is configured to sense direct current base voltages of the common-emitter carrier power stage and to generate control currents that debias the common-emitter carrier power stage in response to the current base voltages of the common-emitter carrier power stage.

The invention discloses a transistor amplification circuit experiment board and an experiment system. Comprising a printed circuit board, a transistor, an adjustable resistor, a plurality of wiring terminals and a plurality of pairs of contact pin sleeves are arranged on the printed circuit board, and two contact pin sleeves of each pair of contact pin sleeves are electrically isolated; an amplifying circuit with a common emitter, a common collector or a common base can be constructed by selecting a signal input port and a signal output port and inserting a capacitor and a resistor into each butt joint pin sleeve to keep an open circuit or a short circuit; the experiment system further comprises a static working voltage display circuit which is used for measuring power supply voltage and static working voltage of the base electrode, the collector electrode and the emitter electrode of the transistor. According to the invention, various bias scheme experiments such as a basic common-emitter amplification circuit experiment with an emitter grounded and a common-emitter amplification circuit experiment with an emitter with alternating current and direct current negative feedback can be carried out, and the device has the advantages that the resistors and the capacitors are all self-selected, and the connection relation of components is intuitive; students can fully understand and master the working characteristics of the transistor amplification circuit.

An amplifier (700) includes a common emitter stage coupled to a first input (720) and a second input (725), a common base stage coupled to the common emitter stage and a first output (730) and a second output (735), and a cancellation path coupled to the common emitter stage and the common base stage and the first output and the second output. The cancellation path generates a first cancellation signal 180 degrees out of phase with a first leakage signal at the first output and a second cancellation signal 180 degrees out of phase with a second leakage signal at the second output. The cancellation path includes a first cancellation transistor (M6) coupled to the common emitter stage and the common base stage and the first output and a second cancellation transistor (M5) coupled to the common emitter stage and the common base stage and the second output.

The invention relates to the field of research, development and application of semiconductor devices, in particular to a silicon / graphene / germanium barrier transistor array based on the technology of epitaxial growth of graphene on germanium and a construction method. The transistor comprises the following components from top to bottom: a first layer comprises a base electrode and silicon thin film combined structure, a second layer comprises an emitting electrode and epitaxially-grown single-crystal single-layer graphene, a third layer is a germanium substrate, and a fourth layer is a collector electrode; wherein the bottom of the base electrode is connected with the graphene through a silicon thin film, and the graphene is a layer of single crystal graphene growing on the surface of the germanium substrate through chemical vapor deposition; the base electrode, the emitter electrode and the collector electrode are all metal electrodes, and the metal electrodes are of a titanium / gold laminated composite structure. According to the invention, Schottky heterojunctions of graphene and germanium and Schottky heterojunctions of graphene and silicon are respectively constructed, and different barrier heights of the two heterojunctions are utilized, so that a 4 * 105 common emitter current gain, a 2 * 106 power gain and a prototype device with THz characteristic frequency theoretically are realized.

This invention discloses a method for improving the stability and gain of a millimeter-wave differential amplifier core. The stability and gain improvement comprises common-mode rejection enhancement and differential-mode gain enhancement. The millimeter-wave differential amplifier core includes a common-emitter amplifier circuit composed of a first transistor and a second transistor, and a common-base amplifier circuit composed of a third transistor and a fourth transistor. A first bias resistor and a second bias resistor are connected in series between the two bases of the first and second transistors. A third bias resistor and a fourth bias resistor are connected in series between the two bases of the third and fourth transistors. The emitter of the third transistor is connected to the collector of the first transistor, and the emitter of the fourth transistor is connected to the collector of the second transistor. A bridging capacitor is also connected between the two bases of the third and fourth transistors. This invention significantly improves the differential-mode gain characteristics of the millimeter-wave band amplifier core while simultaneously enhancing common-mode rejection by combining series capacitors with common-mode gain reduction.

Aspects of the subject disclosure may include, for example, a common emitter stage having a differential input configured to receive an input signal from an input transmission line, a common base stage coupled with the common emitter stage and having a differential output configured to provide a differential output signal to an output transmission line, and a biasing network to bias the common base stage, the biasing network including components selected to limit common mode gain of the common base stage at relatively high frequencies of interest without affecting a differential mode gain of the common base stage. Other embodiments are disclosed.

Disclosed is an amplifier having a carrier amplifier configured as a common-emitter carrier power stage and a peaking amplifier configured as a common-emitter peaking power stage. Further included is power adaptive biasing circuitry coupled between the carrier amplifier and the peaking amplifier, wherein the power adaptive biasing circuitry is configured to sense direct current base voltages of the common-emitter carrier power stage and to generate control currents that debias the common-emitter carrier power stage in response to the current base voltages of the common-emitter carrier power stage.

The utility model relates to a common-emitter amplifier circuit demonstration board in the technical field of teaching aid circuit design, which is characterized in that a coupling potentiometer, a coupling change-over switch, a coupling capacitor unit, an RB potentiometer, an RC potentiometer, a bipolar transistor, a filter capacitor, a load unit and a heating unit are integrated on the same circuit substrate, and a plurality of test points are integrated at specific positions of a circuit. Therefore, a user can switch the coupling capacitor at the input end of the control circuit through the coupling change-over switch; the gain is adjusted through the RB potentiometer and the RC potentiometer; a load carried by the circuit is adjusted through the load unit; the temperature of the bipolar transistor is changed through the heating unit; the common-emitter amplifier circuit demonstration device is connected to the oscilloscope through a plurality of test points, so that teachers and students can directly operate and demonstrate various functional characteristics of the common-emitter amplifier circuit, the technical problem that the function and performance characteristics of the common-emitter amplifier circuit are not easy to demonstrate is solved, and the function and performance characteristics of the common-emitter amplifier circuit are efficiently and flexibly demonstrated.

To provide a protective circuit for a differential amplifier that protects a differential amplifier of a rail-to-rail structure for switching a switch-actuated differential pair against a reverse voltage between a base and an emitter, even for an input differential pair switching structure, without affecting its characteristic.SOLUTION: The protective circuit is constituted to include: a first protective circuit which is connected between an inverse input terminal and a non-inverse input terminal of a differential amplifier of a rail-to-rail structure for selecting a differential pair of different conductive types by a switch, and clamps between the input terminals to a set arbitrary voltage when there is excessive input to either of these two input terminals; and a second protective circuit which is connected between an internal node of the first protective circuit and a common emitter node of one conductive type differential pair of the differential amplifier and can form a current path from the common emitter node to the inverse input terminal or the non-inverse input terminal when a voltage exceeding a reverse breakdown voltage is applied to either of the differential pair.SELECTED DRAWING: Figure 1

The invention relates to a omnidirectional LiDAR (1) comprising at least one emitter for emitting a laser beam (2), a receiver for detecting scattered laser light, and a reflective surface (3) arranged in the beam path of the laser beam (2) during operation, wherein the laser beam (2) can be projected into the environment with a horizontal scanning angle of 360° about a vertical axis (4) by a relative movement between the emitter and the reflective surface (3), and wherein the emitter and the receiver are integrated into a common emitter-receiver arrangement (5). The omnidirectional LiDAR according to the invention is characterized in that the emitter-receiver arrangement (5) is arranged on a rotating arm (7) extending radially outwards from the vertical axis (4) in a plane of rotation (6), wherein the rotating arm (7) is rotatable about the vertical axis (4) by means of an actuator (8). a mirror arrangement (9) encompassing the reflective surface (3) and arranged coaxially to the vertical axis (4) with an axial distance (a) to the plane of rotation (6) that is fixed during operation; and the mirror arrangement (9) is rigidly connected to a support rod (10) running on the vertical axis (4), wherein the rotation arm (7) is rotatably mounted relative to the support rod (10).

The application discloses a band gap voltage reference circuit, which comprises a band gap core module, a current bias module and a reference voltage output module. The band gap core module is used for generating a first current and a second current with a positive temperature coefficient by using a bipolar junction transistor. The current bias module is used for providing a bias current to the band gap core module. The reference voltage output module comprises a first current branch and a negative temperature coefficient voltage generation module connected in sequence. The first current branch is used for copying the second current. The reference voltage output module outputs a reference voltage independent of temperature by compensating a negative temperature coefficient voltage generated by the negative temperature coefficient voltage generation module by using the second current. The reference voltage output module further comprises a second current branch connected in parallel with the first current branch. The second current branch provides a first compensation current to an output node of the reference voltage by mirroring the second current, so as to eliminate the influence of a common emitter amplification factor of the bipolar junction transistor and reduce the temperature drift of the reference voltage.

The invention discloses a common-emitter insulated gate bipolar transistor module, which is characterized in that a module shell comprises two direct current positive terminals and two direct current negative terminals which are used for connecting a power supply side and a load side of a direct current circuit breaker and have the same potential; the bottom plate is detachably connected with the module shell; the copper-clad ceramic substrate is packaged in the module shell and is connected with the bottom plate; the copper-clad ceramic substrate comprises an upper copper-clad layer with a power circuit pattern, a middle layer and a lower copper-clad layer attached to the bottom plate; the power chip set is installed on the copper-clad ceramic substrate, the power chip set comprises a plurality of IGBT chips and a plurality of antiparallel diode chips, and emitting electrodes of all the IGBT chips are connected in a common-emitter mode through an upper copper-clad layer to form a multi-chip parallel common-emitter structure. The IGBT chip is provided with an independent grid control pin which is used for receiving an external driving signal so as to control the on or off of the IGBT chip.

The invention discloses an IGBT equivalent circuit model and an IGBT common emitter parasitic inductance calculation method. The combination of the capacitor and the voltage source of the direct current side branch can simulate energy supporting and filtering effects, the load inductance and the load parasitic inductance of the load side branch can reflect the influence of an inductive load and line stray parameters, and the grid electrode parasitic inductance circuit, the collector electrode parasitic inductance circuit and the emitter electrode parasitic inductance circuit of the IGBT branch correspond to stray inductances of different electrode outgoing lines respectively. Parasitic effects of grid driving signal transmission and a collector current path are accurately reflected, and an FWD chip and a freewheeling parasitic inductance circuit of a freewheeling branch truly simulate a freewheeling path and related stray parameters when an IGBT is turned off. In conclusion, the circuit is divided into the direct current side branch circuit, the load side branch circuit, the IGBT branch circuit and the follow current branch circuit, core elements and parasitic parameters of all the branch circuits are subjected to clear modeling, the multi-loop coupling characteristic of the IGBT in actual work can be completely reproduced, and the consistency of simulation analysis and engineering application is improved.

The present disclosure describes an RF amplifier implemented in SiGe HBT technology. The RF amplifier has a cascode stage including a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to a base of the CE transistor, and an RF output is coupled to a collector of the CB transistor. The RF amplifier includes a CB power down circuit arranged between a base of the CB transistor and the second voltage rail, and a CE power down circuit arranged between the base of the CE transistor and the second voltage rail. In a power down mode, the CE power down circuit couples the base of the common emitter transistor to the second voltage rail. The CB power down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.

The application discloses a gas-restraint type carbon nanotube field ionization thruster, which comprises a first pole plate, a second pole plate, a gas restraint plate, a sealing ring, a first shell and a second shell. The second pole plate is provided with carbon nanotube clusters with gaps generated by chemical vapor deposition and chemical point covering method, and the carbon nanotube clusters have larger tip electric field and higher ionization efficiency than common emitters, but the distribution of the carbon nanotube clusters is relatively sparse. The gas restraint device cooperates with the carbon nanotube clusters of the emitters to ensure that the carbon nanotube clusters have independent ionization spaces, avoids the working medium gas from escaping into the gaps of the carbon nanotube clusters, and thus improves the ionization efficiency. Meanwhile, the gas restraint device can further shield the electric field influence between the carbon nanotube clusters, avoids the mutual interference between different carbon nanotube clusters during propulsion, improves the controllability of the thruster, and further improves the ionization efficiency. The device can reduce the waste of the working medium gas and improve the service life of the thruster.

The embodiment of the invention discloses a method for separating a base current component of a bipolar transistor. The method comprises the following steps: acquiring common emitter input characteristic curve data of the bipolar transistor; determining a base test electrofluid component fitting model of the high base emitter test voltage section and a base test current surface component fitting model of the low base emitter test voltage section; fitting the base test current and the base emitter test voltage in the high base emitter test voltage section based on a base test electrofluid component fitting model, and determining a surface component; and fitting the base test current and the base emitter test voltage in the low base emitter test voltage section based on a base test current surface component fitting model to determine a volume component. By using the simple test method and the calculation fitting process, the test cost and complexity are reduced, and the analysis efficiency is improved.

The invention discloses a solid-state electronic switch and arc extinction protection circuit for an alternating current short circuit test and a control method. The solid-state electronic switch and arc extinction protection circuit comprises a controller, a driving circuit, a bidirectional main switch branch and a composite absorption circuit, the bidirectional main switch branch is a bidirectional AC switch unit formed by connecting two fully-controlled power semiconductor switch devices in a common emitter back-to-back mode; the controller is connected with the driving circuit and is used for synchronizing an alternating-current voltage phase, outputting a short-circuit trigger signal to the driving circuit at a specified voltage phase angle, outputting a turn-off control signal after a preset short-circuit duration, monitoring a short-circuit current waveform in real time, recording protection action time and outputting a test result; control electrodes of the two switching devices are respectively connected with a driving circuit, the driving circuit synchronously drives the two switching devices to switch on and switch off an L-N loop so as to simulate short circuit, a collector electrode and an emitter electrode are connected with the independent composite absorption circuits in parallel, and each composite absorption circuit suppresses switch-off overvoltage and electromagnetic oscillation at the switch-off moment.

This invention discloses a multi-chip parallel half-bridge IGBT module. The invention adds an emitter signal copper layer, directly extracting the emitter voltage signal from the corresponding bonding wire cluster. This reduces the common-emitter parasitic inductance between the signal circuit and the power circuit, as well as the mutual inductance between the power circuit and the signal control circuit. It also reduces the voltage division of the signal control circuit by the common-emitter parasitic inductance, lowers the impact of power circuit current changes on signal control circuit voltage changes, and accelerates the drop rate of the chip's collector-emitter voltage during turn-on. This reduces chip losses during turn-on and helps improve the module's operating frequency.

The utility model relates to a power semiconductor module with a common emitter, which comprises a power semiconductor module body, the power semiconductor module body is composed of a heat dissipation substrate and at least two insulating ceramic substrates arranged on the heat dissipation substrate, each insulating ceramic substrate is provided with a silicon carbide chip and a resistor, and the silicon carbide chip is connected with the resistor. Wherein the silicon carbide chip is connected with the insulating ceramic substrate through a copper bar, the resistor is connected with the silicon carbide chip through a metal wire, and the insulating ceramic substrate and the heat dissipation substrate are respectively provided with a power terminal and a signal terminal. The utility model has the advantages of simple structure, convenient manufacturing process, short manufacturing time, better performance and the like.