42 results about "Common emitter" patented technology

The invention relates to a folded cascode low noise amplifier. The disclosed low noise amplifiers (LNAs) include a common emitter amplifier (CE-A), a common gate amplifier (CG-A), and various passive devices located in CE-A and CG-A. The CE-A includes an NPN type bipolar junction transistor (BJT) having emitter and collector (E / C) regions, and a base region located between the E / C regions and connected to an input node. The CG-A includes a P-channel field effect transistor (PFET) having source and drain (S / D) regions, a channel region between the S / D regions, and a gate adjacent to the channel region. A drain region of the PFET is connected to the output node. Further, the common inductor, the collector region of the BJT, and the source region of the PFET are connected at an intermediate node. The LNA is implemented on a three-dimensional integrated circuit (3DIC) in which the BJT and the FET are located on different chips and the passive device is located in a back-end-of-line region between the BJT and the FET.

A disclosed low noise amplifier (LNA) includes a common-emitter amplifier (CE-A), a common-gate amplifier (CG-A) and various passive devices in CE-A and CG-A. CE-A includes an NPN-type bipolar junction transistor (BJT) with emitter and collector (E / C) regions and a base region between the E / C regions and connected to an input node. CG-A includes P-channel field effect transistor (PFET) with source and drain (S / D) regions, a channel region between the S / D region, and a gate adjacent to the channel region. The drain region of the PFET is connected to an output node. Additionally, a common inductor, collector region of the BJT, and source region of the PFET are connected at an intermediate node. The LNA is implemented on a three-dimensional integrated circuit (3DIC) with the BJT and FET on different chips and with passive devices in back end of the line regions between the BJT and FET.

The invention provides a method and a device for identifying a second-class short circuit state of an insulated gate bipolar transistor (IGBT), and relates to the technical field of IGBT devices. The invention aims to timely and accurately judge whether the insulated gate bipolar transistor is in the second-class short circuit state or not. The method comprises the following steps: acquiring an emitter structure of an insulated gate bipolar transistor in a test circuit; if the emitter structure does not have the auxiliary emitter, acquiring a chip gate voltage, a gate side line parasitic inductance, a gate parasitic inductance, an emitter side line parasitic inductance, a common emitter parasitic inductance, a gate current, a collector current and a current from a gate to a collector in a gate driving loop; on the basis of the Kirchhoff's voltage law, grid voltage is determined through the collected parameter data; and if the grid voltage is within the preset short-circuit voltage range, determining that the insulated gate bipolar transistor has a second-class short circuit.

The invention discloses a storage battery power shortage protection circuit of an artillery power supply electrical system, which comprises a voltage sampling unit, a power shortage judgment and control unit and an electronic switch unit, and is characterized in that the voltage sampling unit is used for sampling power supply voltage of a storage battery and setting a power shortage protection point threshold value through a resistance network; a power supply sampling voltage is provided for the power shortage judgment and control unit; a comparison circuit of the power shortage judgment and control unit compares a sampled power supply voltage with an internal reference voltage, controls the on-off of a two-stage triode common emitter circuit of the post-stage driving amplification circuit through the on-off of an internal triode, and controls the power-on or power-off of a relay coil of the electronic switch unit. Therefore, the normally open contact of the relay is used as an electronic switch to realize the power distribution control of the equipment mounted on the artillery power supply system. The storage battery power shortage protection circuit provided by the invention has the characteristics of adjustable threshold value, extremely low power consumption, strong anti-interference capability and high reliability.

Embodiments of a power amplification device are disclosed. The power amplification device includes a power amplification circuit configured to amplify a radio frequency (RF) input signal and generate an amplified RF output signal. The power amplification device also includes a bias circuit. The bias circuit is provided in a closed loop configuration that has a bipolar junction transistor (BJT) that generates the bias voltage applied to the RF input signal. The BJT is provided in a common emitter configuration. This allows for the bias voltage generated by the bias circuit to be generated with a power voltage having a lower voltage level.

The invention discloses a terahertz broadband on-off keying modulator with stable input impedance. According to the invention, a parallel common-base common-emitter bottom differential pair is adopted, and when the parallel common-base common-emitter bottom differential pair works in a differential mode state, a signal path formed by transistors Q6, Q5, Q7 and Q8 forms an amplification path, so that high current gain is ensured; when working in a common-mode state, signals from the common emitter transistor pairs Q5 and Q8 and signals from the common base transistor pairs Q6 and Q7 are offset, so that common-mode leakage signals are inhibited, and the'on-off 'isolation degree is further improved. The working frequency band is regulated and controlled by regulating and controlling the direct-current bias and the size of the common-base transistor to the Q6 and the Q7. According to the invention, a parallel common-base common-emitter differential pair is adopted as a double-balance differential structure OOK modulator of a bottom tail tube, so that low on / off input impedance change is realized while ultra-wideband input matching and high switch isolation are realized.

The utility model relates to an electronic circuit fault diagnosis practical training examination device, a teacher terminal comprises a first controller, student terminals comprise second controllers, the first controller and the second controllers are provided with wireless communication modules, the first controller and the plurality of second controllers are communicated through the wireless communication modules, and the first controller is connected with the student terminals through the wireless communication modules. The first controller and the second controller are also provided with display screens, and the first controller and the second controller are in communication connection with the display screens; the plurality of student terminals further comprise electronic circuit fault boards. The electronic circuit fault board comprises but is not limited to one or combination of more of an electronic doorbell circuit, a direct current stabilized power supply circuit, a sound control LED melody lamp circuit, a phototransistor and LM358-based light-operated switch circuit, a common emitter amplification circuit, a running water colored lamp circuit, a sound and light control lamp circuit and a single chip microcomputer application circuit; the electronic circuit fault board is connected with a power supply to form a loop. According to the utility model, examination can be carried out conveniently, and students can carry out various examination exercises.

Disclosed is an amplifier having a carrier amplifier configured as a common-emitter carrier power stage and a peaking amplifier configured as a common-emitter peaking power stage. Further included is power adaptive biasing circuitry coupled between the carrier amplifier and the peaking amplifier, wherein the power adaptive biasing circuitry is configured to sense direct current base voltages of the common-emitter carrier power stage and to generate control currents that debias the common-emitter carrier power stage in response to the current base voltages of the common-emitter carrier power stage.

The invention discloses a transistor amplification circuit experiment board and an experiment system. Comprising a printed circuit board, a transistor, an adjustable resistor, a plurality of wiring terminals and a plurality of pairs of contact pin sleeves are arranged on the printed circuit board, and two contact pin sleeves of each pair of contact pin sleeves are electrically isolated; an amplifying circuit with a common emitter, a common collector or a common base can be constructed by selecting a signal input port and a signal output port and inserting a capacitor and a resistor into each butt joint pin sleeve to keep an open circuit or a short circuit; the experiment system further comprises a static working voltage display circuit which is used for measuring power supply voltage and static working voltage of the base electrode, the collector electrode and the emitter electrode of the transistor. According to the invention, various bias scheme experiments such as a basic common-emitter amplification circuit experiment with an emitter grounded and a common-emitter amplification circuit experiment with an emitter with alternating current and direct current negative feedback can be carried out, and the device has the advantages that the resistors and the capacitors are all self-selected, and the connection relation of components is intuitive; students can fully understand and master the working characteristics of the transistor amplification circuit.

The invention relates to the field of research, development and application of multifunctional devices, in particular to a multifunctional thermal emitter transistor based on a graphene / germanium Schottky junction and a construction method. The transistor comprises a top metal electrode, an aluminum oxide insulating layer, a graphene channel with a nanometer gap, a hafnium oxide insulating layer, a germanium substrate, a base metal electrode and an emitter metal electrode from top to bottom, wherein the base metal electrode and the emitter metal electrode are located on the two sides of the graphene channel and make contact with the graphene channel, and the metal electrodes are of a gold / titanium laminated composite structure. According to the invention, a Schottky junction of graphene and germanium is constructed, a multifunctional thermal emitter transistor is constructed, and an injection-induced hot carrier emission mechanism is utilized, so that the subthreshold swing lower than the Boltzmann limit of 60mV / decand the negative differential resistance with the peak-valley current ratio greater than 10 at room temperature and atmospheric pressure are realized; the invention relates to a THz transistor prototype device with a common emitter current gain greater than 100.

An amplifier (700) includes a common emitter stage coupled to a first input (720) and a second input (725), a common base stage coupled to the common emitter stage and a first output (730) and a second output (735), and a cancellation path coupled to the common emitter stage and the common base stage and the first output and the second output. The cancellation path generates a first cancellation signal 180 degrees out of phase with a first leakage signal at the first output and a second cancellation signal 180 degrees out of phase with a second leakage signal at the second output. The cancellation path includes a first cancellation transistor (M6) coupled to the common emitter stage and the common base stage and the first output and a second cancellation transistor (M5) coupled to the common emitter stage and the common base stage and the second output.

The invention relates to the field of research, development and application of semiconductor devices, in particular to a silicon / graphene / germanium barrier transistor array based on the technology of epitaxial growth of graphene on germanium and a construction method. The transistor comprises the following components from top to bottom: a first layer comprises a base electrode and silicon thin film combined structure, a second layer comprises an emitting electrode and epitaxially-grown single-crystal single-layer graphene, a third layer is a germanium substrate, and a fourth layer is a collector electrode; wherein the bottom of the base electrode is connected with the graphene through a silicon thin film, and the graphene is a layer of single crystal graphene growing on the surface of the germanium substrate through chemical vapor deposition; the base electrode, the emitter electrode and the collector electrode are all metal electrodes, and the metal electrodes are of a titanium / gold laminated composite structure. According to the invention, Schottky heterojunctions of graphene and germanium and Schottky heterojunctions of graphene and silicon are respectively constructed, and different barrier heights of the two heterojunctions are utilized, so that a 4 * 105 common emitter current gain, a 2 * 106 power gain and a prototype device with THz characteristic frequency theoretically are realized.

This invention discloses a method for improving the stability and gain of a millimeter-wave differential amplifier core. The stability and gain improvement comprises common-mode rejection enhancement and differential-mode gain enhancement. The millimeter-wave differential amplifier core includes a common-emitter amplifier circuit composed of a first transistor and a second transistor, and a common-base amplifier circuit composed of a third transistor and a fourth transistor. A first bias resistor and a second bias resistor are connected in series between the two bases of the first and second transistors. A third bias resistor and a fourth bias resistor are connected in series between the two bases of the third and fourth transistors. The emitter of the third transistor is connected to the collector of the first transistor, and the emitter of the fourth transistor is connected to the collector of the second transistor. A bridging capacitor is also connected between the two bases of the third and fourth transistors. This invention significantly improves the differential-mode gain characteristics of the millimeter-wave band amplifier core while simultaneously enhancing common-mode rejection by combining series capacitors with common-mode gain reduction.

An amplifier for converting a single-ended input signal to a differential output signal. The amplifier comprises a first transistor, a second transistor, a third transistor and a fourth transistor. The first transistor, configured in common-source or common-emitter mode, receives the single-ended input signal and generates a first part of the differential output signal. The second transistor, also configured in common-source or common-emitter mode, generates a second part of the differential output signal. The third and fourth transistors are capacitively cross-coupled. The amplifier further comprises inductive degeneration such that a source or emitter of the first transistor is connected to a first inductor and a source or emitter of the second transistor is connected to a second inductor.

The invention relates to a preparation method of an image sensor structure and the image sensor structure, and relates to the technical field of semiconductors. According to the preparation method of the image sensor structure, the photodiode and the common emitter triode are prepared at the same time and integrated on the same substrate, and miniaturization of the image sensor structure is achieved. A first doped region of a photodiode is connected with a base region of a common-emitter triode through a connecting structure, after the photodiode receives an optical signal, the optical signal is converted into an electric signal, then the electric signal is transmitted to the common-emitter triode through the connecting structure, and the common-emitter triode further amplifies the electric signal. The imaging quality of the image sensor can be improved when the electric signal is increased, and the image sensor structure can amplify the electric signal even if the received optical signal is weak and the electric signal generated by the photodiode is weak due to the existence of the common-emitter triode, so that the imaging quality of the image sensor in the dark environment is improved.

A conversion circuit using a common base as the front stage V / I and the back stage as I / V. (1) Because the differential input stage in the analog amplifier is composed of a common emitter circuit, it hinders the development of the input signal to high frequency and high speed. For this reason, the present invention designs an input stage circuit composed of a common base circuit. We know that the f T Compared with the common-emission method, f T The bandwidth is increased by β times of the tube itself. By utilizing this advantage of the common base circuit, a wide-band, high-speed circuit can be designed. (2) The final stage is used as an I / V conversion circuit. In analog amplifiers, in order to reduce the crossover distortion caused by the large current push-pull of the end tube, the static current of the end-stage push-pull tube is usually designed to be large, which is called Class A. The design method of Class B is to only give the end tube a very small static current and allow crossover distortion to exist, in order to save costs, but it will significantly affect the sound quality. For this reason, this circuit designs a super Class A circuit. It is composed of a common base circuit and only requires the static current of Class B to eliminate crossover distortion. It reduces costs and saves energy. It belongs to analog electronics and is used in high-speed circuits or audio fields.

Aspects of the subject disclosure may include, for example, a common emitter stage having a differential input configured to receive an input signal from an input transmission line, a common base stage coupled with the common emitter stage and having a differential output configured to provide a differential output signal to an output transmission line, and a biasing network to bias the common base stage, the biasing network including components selected to limit common mode gain of the common base stage at relatively high frequencies of interest without affecting a differential mode gain of the common base stage. Other embodiments are disclosed.

Disclosed is an amplifier having a carrier amplifier configured as a common-emitter carrier power stage and a peaking amplifier configured as a common-emitter peaking power stage. Further included is power adaptive biasing circuitry coupled between the carrier amplifier and the peaking amplifier, wherein the power adaptive biasing circuitry is configured to sense direct current base voltages of the common-emitter carrier power stage and to generate control currents that debias the common-emitter carrier power stage in response to the current base voltages of the common-emitter carrier power stage.

The invention provides a radiation hardening triode device and a manufacturing method thereof. Belongs to the technical field of semiconductors. The radiation hardening triode device comprises a substrate, a buried oxide layer, a first N-type doped region, a second N-type doped region, a third N-type doped region, a first P-type doped region, a second P-type doped region, a first isolation shallow groove, a second isolation shallow groove, a third isolation shallow groove, a fourth isolation shallow groove, a linear oxide layer, polycrystalline silicon, a fourth N-type doped region, a fifth N-type doped region and a third P-type doped region. According to the invention, the polysilicon is filled in the isolation shallow groove, the thickness of the isolation oxide layer is reduced, and the total dose radiation resistance of the triode device is improved. Under the condition that a mask plate is not added, a second P-type doped region is formed on the side wall and the bottom of the base region isolation shallow groove in an injection mode, increase of recombination current on the surface of the base region is prevented, degradation of a common emitter current amplification coefficient of the device is restrained, the total dose radiation resistance of the triode device is effectively improved, and the process manufacturing cost is reduced.

The utility model relates to a common-emitter amplifier circuit demonstration board in the technical field of teaching aid circuit design, which is characterized in that a coupling potentiometer, a coupling change-over switch, a coupling capacitor unit, an RB potentiometer, an RC potentiometer, a bipolar transistor, a filter capacitor, a load unit and a heating unit are integrated on the same circuit substrate, and a plurality of test points are integrated at specific positions of a circuit. Therefore, a user can switch the coupling capacitor at the input end of the control circuit through the coupling change-over switch; the gain is adjusted through the RB potentiometer and the RC potentiometer; a load carried by the circuit is adjusted through the load unit; the temperature of the bipolar transistor is changed through the heating unit; the common-emitter amplifier circuit demonstration device is connected to the oscilloscope through a plurality of test points, so that teachers and students can directly operate and demonstrate various functional characteristics of the common-emitter amplifier circuit, the technical problem that the function and performance characteristics of the common-emitter amplifier circuit are not easy to demonstrate is solved, and the function and performance characteristics of the common-emitter amplifier circuit are efficiently and flexibly demonstrated.

To provide a protective circuit for a differential amplifier that protects a differential amplifier of a rail-to-rail structure for switching a switch-actuated differential pair against a reverse voltage between a base and an emitter, even for an input differential pair switching structure, without affecting its characteristic.SOLUTION: The protective circuit is constituted to include: a first protective circuit which is connected between an inverse input terminal and a non-inverse input terminal of a differential amplifier of a rail-to-rail structure for selecting a differential pair of different conductive types by a switch, and clamps between the input terminals to a set arbitrary voltage when there is excessive input to either of these two input terminals; and a second protective circuit which is connected between an internal node of the first protective circuit and a common emitter node of one conductive type differential pair of the differential amplifier and can form a current path from the common emitter node to the inverse input terminal or the non-inverse input terminal when a voltage exceeding a reverse breakdown voltage is applied to either of the differential pair.SELECTED DRAWING: Figure 1

The present invention relates to the field of welding automation, and specifically designs a weld tracking device for controlling the arc shape of TIG welding based on a longitudinal magnetic field. The purpose of the present invention is to control the rotation of charged particles by controlling the longitudinal magnetic field, and then obtain the deviation between the welding gun and the weld by comparing the voltage value. The invention is simple to operate and has accurate weld tracking. The system includes a tungsten electrode welding gun, a bracket, a gear, an excitation coil, an outer sleeve, an inner sleeve, a bearing, a Hall sensor, a computer, a common emitter amplifier circuit device, etc. The structure is simple, and it has real-time performance, high efficiency, and high weld tracking accuracy.

The invention relates to the field of semiconductor photoelectrons, and discloses a chaotic laser generating device based on a transistor laser photoelectric feedback structure. Comprising a transistor laser, an optical coupler, an adjustable optical attenuator, a photoelectric converter and an electric amplifier, wherein the laser output end of the transistor laser is connected with the input end of the optical coupler, an optical signal output by the first output end of the optical coupler is attenuated by the adjustable optical attenuator and then is received by the photoelectric converter and subjected to photoelectric conversion, and an electric signal subjected to photoelectric conversion is amplified by the electric amplifier and then is output to the output end of the transistor laser. The signal is sent to the base electrode of the transistor laser; the transistor laser adopts a common emitter working mode. According to the invention, relaxation oscillation of the transistor laser can be effectively suppressed or even eliminated, so that the bandwidth of chaotic laser is improved.

The invention relates to a omnidirectional LiDAR (1) comprising at least one emitter for emitting a laser beam (2), a receiver for detecting scattered laser light, and a reflective surface (3) arranged in the beam path of the laser beam (2) during operation, wherein the laser beam (2) can be projected into the environment with a horizontal scanning angle of 360° about a vertical axis (4) by a relative movement between the emitter and the reflective surface (3), and wherein the emitter and the receiver are integrated into a common emitter-receiver arrangement (5). The omnidirectional LiDAR according to the invention is characterized in that the emitter-receiver arrangement (5) is arranged on a rotating arm (7) extending radially outwards from the vertical axis (4) in a plane of rotation (6), wherein the rotating arm (7) is rotatable about the vertical axis (4) by means of an actuator (8). a mirror arrangement (9) encompassing the reflective surface (3) and arranged coaxially to the vertical axis (4) with an axial distance (a) to the plane of rotation (6) that is fixed during operation; and the mirror arrangement (9) is rigidly connected to a support rod (10) running on the vertical axis (4), wherein the rotation arm (7) is rotatably mounted relative to the support rod (10).

The application discloses a band gap voltage reference circuit, which comprises a band gap core module, a current bias module and a reference voltage output module. The band gap core module is used for generating a first current and a second current with a positive temperature coefficient by using a bipolar junction transistor. The current bias module is used for providing a bias current to the band gap core module. The reference voltage output module comprises a first current branch and a negative temperature coefficient voltage generation module connected in sequence. The first current branch is used for copying the second current. The reference voltage output module outputs a reference voltage independent of temperature by compensating a negative temperature coefficient voltage generated by the negative temperature coefficient voltage generation module by using the second current. The reference voltage output module further comprises a second current branch connected in parallel with the first current branch. The second current branch provides a first compensation current to an output node of the reference voltage by mirroring the second current, so as to eliminate the influence of a common emitter amplification factor of the bipolar junction transistor and reduce the temperature drift of the reference voltage.

The present invention provides a radiation-resistant high-voltage longitudinal triode structure, which comprises a second-conductivity-type emitter region, a first-conductivity-type well region, a second-conductivity-type well region, a second-conductivity-type buried layer region, a first-conductivity-type substrate, a first-conductivity-type segmented injection region, a shallow trench isolation oxide layer, a second-conductivity-type emitter injection region, a first-conductivity-type base injection region, a second-conductivity-type collector injection region, an emitter metal electrode, a base metal electrode, and a collector metal electrode. The present invention introduces a highly doped P-type region on the surface of one side of the emitter junction base region, thereby weakening the influence of total-dose radiation-induced trapped charges on the emitter junction injection efficiency, thereby preventing the increase of base region surface recombination current and suppressing the degradation of the device's common-emitter current amplification factor. In addition, the highly doped P-type injection on the surface of one side of the emitter junction base region adopts a segmented structure in the z-axis direction, thereby weakening the decrease in the initial common-emitter current amplification factor of the triode.

The invention discloses a common-emitter insulated gate bipolar transistor module, which is characterized in that a module shell comprises two direct current positive terminals and two direct current negative terminals which are used for connecting a power supply side and a load side of a direct current circuit breaker and have the same potential; the bottom plate is detachably connected with the module shell; the copper-clad ceramic substrate is packaged in the module shell and is connected with the bottom plate; the copper-clad ceramic substrate comprises an upper copper-clad layer with a power circuit pattern, a middle layer and a lower copper-clad layer attached to the bottom plate; the power chip set is installed on the copper-clad ceramic substrate, the power chip set comprises a plurality of IGBT chips and a plurality of antiparallel diode chips, and emitting electrodes of all the IGBT chips are connected in a common-emitter mode through an upper copper-clad layer to form a multi-chip parallel common-emitter structure. The IGBT chip is provided with an independent grid control pin which is used for receiving an external driving signal so as to control the on or off of the IGBT chip.

The invention discloses an IGBT equivalent circuit model and an IGBT common emitter parasitic inductance calculation method. The combination of the capacitor and the voltage source of the direct current side branch can simulate energy supporting and filtering effects, the load inductance and the load parasitic inductance of the load side branch can reflect the influence of an inductive load and line stray parameters, and the grid electrode parasitic inductance circuit, the collector electrode parasitic inductance circuit and the emitter electrode parasitic inductance circuit of the IGBT branch correspond to stray inductances of different electrode outgoing lines respectively. Parasitic effects of grid driving signal transmission and a collector current path are accurately reflected, and an FWD chip and a freewheeling parasitic inductance circuit of a freewheeling branch truly simulate a freewheeling path and related stray parameters when an IGBT is turned off. In conclusion, the circuit is divided into the direct current side branch circuit, the load side branch circuit, the IGBT branch circuit and the follow current branch circuit, core elements and parasitic parameters of all the branch circuits are subjected to clear modeling, the multi-loop coupling characteristic of the IGBT in actual work can be completely reproduced, and the consistency of simulation analysis and engineering application is improved.

The present disclosure describes an RF amplifier implemented in SiGe HBT technology. The RF amplifier has a cascode stage including a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to a base of the CE transistor, and an RF output is coupled to a collector of the CB transistor. The RF amplifier includes a CB power down circuit arranged between a base of the CB transistor and the second voltage rail, and a CE power down circuit arranged between the base of the CE transistor and the second voltage rail. In a power down mode, the CE power down circuit couples the base of the common emitter transistor to the second voltage rail. The CB power down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.

The application discloses a gas-restraint type carbon nanotube field ionization thruster, which comprises a first pole plate, a second pole plate, a gas restraint plate, a sealing ring, a first shell and a second shell. The second pole plate is provided with carbon nanotube clusters with gaps generated by chemical vapor deposition and chemical point covering method, and the carbon nanotube clusters have larger tip electric field and higher ionization efficiency than common emitters, but the distribution of the carbon nanotube clusters is relatively sparse. The gas restraint device cooperates with the carbon nanotube clusters of the emitters to ensure that the carbon nanotube clusters have independent ionization spaces, avoids the working medium gas from escaping into the gaps of the carbon nanotube clusters, and thus improves the ionization efficiency. Meanwhile, the gas restraint device can further shield the electric field influence between the carbon nanotube clusters, avoids the mutual interference between different carbon nanotube clusters during propulsion, improves the controllability of the thruster, and further improves the ionization efficiency. The device can reduce the waste of the working medium gas and improve the service life of the thruster.